EP1342128A2 - Systeme de projection pour lithographie euv - Google Patents

Systeme de projection pour lithographie euv

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Publication number
EP1342128A2
EP1342128A2 EP01270809A EP01270809A EP1342128A2 EP 1342128 A2 EP1342128 A2 EP 1342128A2 EP 01270809 A EP01270809 A EP 01270809A EP 01270809 A EP01270809 A EP 01270809A EP 1342128 A2 EP1342128 A2 EP 1342128A2
Authority
EP
European Patent Office
Prior art keywords
mirror
image
ape
optical
tertiary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01270809A
Other languages
German (de)
English (en)
Inventor
Hans-Jürgen Mann
Russell Hudyma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of EP1342128A2 publication Critical patent/EP1342128A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Definitions

  • the invention relates to an optical projection system for extreme ultraviolet (EUV) lithography, particularly including six mirrors arranged in two optical groups.
  • EUV extreme ultraviolet
  • next generation of photolithographic printing systems will use exposure radiation having soft x-ray or extreme ultraviolet wavelengths of approximately 11 nm to 15 nm, also in a step and scan printing architecture. To be economically viable, these next generation systems will require a sufficiently large numerical aperture to address sub 70 nm integrated circuit design rules. Further, these photolithography systems will require large fields of view in the scan direction to ensure that the throughput (defined in terms of wafers per hour) is sufficiently great so that the process is economically viable.
  • Four-mirror projection systems such as those described in United States patents no. 5,315,629 and 6,226,346, issuing to Jewel and Hudyma, respectively, lack the degrees of freedom necessary to correct aberrations over a sufficiently large NA to achieve 30 nm design rules.
  • the '346 patent teaches that a four-mirror projection system can be used to correct aberrations at a numerical aperture up to 0.14 (50 nm design rules).
  • the '346 patent demonstrates that the ring field is reduced from 1. 5 mm to 1.0 mm as a numerical aperture is increased from 0.10 to 0.12.
  • This particular embodiment is constructed with three mirror pairs and uses positive/negative (P/N) and negative/positive (N/P) combinations to achieve the flat field condition
  • P/N positive/negative
  • N/P negative/positive
  • lchihara and Higuchi also demonstrate that the flat field imaging condition (zero Petzval sum) can be achieved with a system that utilizes an intermediate image between the first mirror pair and last mirror pair.
  • the patent teaches the use of a convex secondary mirror with an aperture stop that is co-located at this mirror. It is also clear from examination of the embodiments that the '240 patent teaches the use of low incidence angles at each of the mirror surfaces to ensure compatibility with reflective coatings that operate at wavelengths around 10 nm.
  • Williamson describes a six-mirror ring field projection system intended for use with EUV radiation. Each of the mirrors is aspheric and share a common optical axis. This particular embodiment has a numerical aperture of 0.25 and is capable of 30 nm lithography using conservative (-0.6) values for ki.
  • the '310 patent suggests that both PNPPNP and PPPPNP reimaging configurations are possible with a physically accessible intermediate image located between the third and fourth mirrors.
  • This particular embodiment consists, from long conjugate to short conjugate, of a concave, convex, concave, concave, convex and concave mirror, or PNPPNP for short.
  • the '310 patent suggests that both PNPPNP and the PPPPNP power distributions can achieve 30 nm design rules.
  • the preferred EUV embodiment disclosed in the '310 patent suffers from several drawbacks, one of which is the high incidence angles at each of the mirrored surfaces, particularly on mirrors M2 and M3. In some instances, the angle of incidence exceeds 24° at a given location on the mirror. Both the mean angle and deviation or spread of angles at a given point on a mirror surface is sufficient to cause noticeable amplitude and phase effects due to the EUV multilayer coatings that might adversely impact critical dimension (CD control).
  • CD control critical dimension
  • U.S. Patent No. 6,033,079 issuing to Hudyma.
  • the first embodiment that the '079 patent describes is arranged with, from long to short conjugate, a concave, concave, convex, concave, convex, and concave mirror surfaces (PPNPNP).
  • the second preferred embodiment from the '079 patent has, from long to short conjugate, a concave, convex, convex, concave, convex, and concave mirror surfaces (PNNPNP).
  • the '079 patent teaches that both PPNPNP and PNNPNP reimaging configurations are advantageous with a physically accessible intermediate image located between the fourth and fifth mirror.
  • the '079 patent teaches the use of an aperture stop at the secondary mirror and a chief ray that diverges from the optical axis after the secondary mirror.
  • the '079 patent teaches that the use of a convex tertiary mirror enables a large reduction in low-order astigmatism.
  • This particular arrangement of optical power is advantageous for achieving a high level of aberration correction without using high incidence angles or extremely large aspheric departures. For both embodiments, all aspheric departures are below 15 ⁇ m and most are below 10 ⁇ m.
  • the '079 patent makes a significant teaching related to EUV via the use of low incidence angles on each of the reflective surfaces.
  • the PPNPNP and PNNPNP power arrangements promote low incidence angles thus enabling simple and efficient EUV mirror coatings.
  • the low incidence angles work to minimize coating-induced amplitude variations in the exit pupil, minimize coating-induced phase or optical path difference (OPD) variations in the exit pupil, and generally lower the tolerance sensitivity of the optical system. These factors combine to promote improved transmittance and enhanced CD uniformity in the presence of variations in focus and exposure. While the prior art projection optical systems have proven adequate for many applications, they're not without design compromises that may not provide an optimum solution in all applications. Therefore, there is a need for a projection optical system that can be used in the extreme ultraviolet (EUV) or soft X-ray wavelength region that has a relatively large image field with capable of sub 50 nm resolution.
  • EUV extreme ultraviolet
  • soft X-ray wavelength region that has a relatively large image field with capable of sub 50 nm resolution.
  • an EUV optical projection system including at least six reflecting surfaces for imaging an object on an image.
  • the system is configured to form an intermediate image along an optical path from the object to the image between a secondary mirror and a tertiary mirror, such that a primary mirror and the secondary mirror form a first optical group and the tertiary mirror and a fourth mirror, a fifth mirror and a sixth mirror form a second optical group.
  • the secondary mirror is concave
  • the tertiary mirror is convex.
  • the system may further include an aperture stop located along the optical path from the object to the image between the primary mirror and the secondary mirror. This aperture stop may be disposed off each of the first mirror and the second mirror.
  • the system may be further configured such that a chief ray from a central field point converges toward or propagates approximately parallel to the optical axis while propagating between the secondary mirror and the tertiary mirror.
  • the primary mirror may be physically located closer to the object than the tertiary mirror.
  • the system may be further configured such that a chief ray from a central field point diverges away from the optical axis while propagating between the secondary mirror and the tertiary mirror.
  • the tertiary mirror may be physically located closer to the object than the primary mirror.
  • the primary mirror is preferably concave
  • the fourth mirror is preferably concave
  • the fifth mirror is preferably convex
  • the sixth mirror is preferably concave.
  • the physical distance between the object and the image may be substantially 1500 mm or less, and may further be substantially 1200 mm or less.
  • the system preferably has a numerical aperture at the image greater than 0.18.
  • Each of the six reflecting surfaces preferably receives a chief ray from a central field point at an incidence angle of less than substantially 15°, preferably less than substantially 15°, and five of the six reflecting surfaces preferably receives a chief ray from a central field point at an incidence angle of less than substantially 11°, preferably less than substantially 9°.
  • the system is preferably configured to have a RMS wavefront error of 0.017 ⁇ or less, and may be between 0.017 ⁇ and 0.011 ⁇ .
  • Figure 1 shows a plan view of an EUV optical projection system according to a first preferred embodiment.
  • Figure 2 schematically illustrates the geometry of the arcuate ring field according to the preferred embodiments at the object.
  • Figure 3 shows a plan view of an EUV optical projection system according to a second preferred embodiment.
  • Figure 4 shows a plan view of an EUV optical projection system according to a third preferred embodiment.
  • Figure 1 shows a plan view of a first preferred embodiment, and, taking in conjunction with Table 1 and Table 2, provides an illustrative, exemplary description of this embodiment.
  • an object e.g. a reflective mask or reticle from an illumination system and is directed to concave mirror M1 after which it reflects from the mirror M1 and passes through a physically accessible aperture stop APE that is located between Mirror M1 and M2.
  • This aperture stop APE is located a substantial distance from the first concave mirror M1 and, likewise, this aperture stop APE is located a substantial distance from concave mirror M2.
  • the illumination reflects off concave mirror M2
  • the light comes to a focus at an intermediate image IMI that is located in close proximity to convex mirror M3.
  • the illumination is directed toward concave mirror M4 where the light is nearly collimated and directed toward convex mirror M5.
  • the light Upon reflection from mirror M5, the light impinges on concave mirror M6 where it is reflected in a telecentric manner (the chief rays are parallel to the optical axis OA) and focused on the image IM.
  • a semiconductor wafer is typically arranged at the position of the image IM. Since a concave optical surface has positive optical power (P) and a convex optical surface has negative optical power (N), this present embodiment may be characterized as a PPNPNP configuration.
  • the first group G1 is comprised the concave mirror pair M1 and M2.
  • This group forms an intermediate image IMI at a magnification of about -0.8x between mirror M2 and mirror M3.
  • the remaining four mirrors (convex mirror M3, concave mirror M4, convex mirror M5 and concave mirror M6) comprise the second imaging or relay group G2.
  • This second group G2 works at a magnification of approximately -0.3x, resulting in 4x reduction (the reduction ratio is the inverse of the absolute value of the optical magnification) of the object OB at the image IM.
  • the optical prescription of the first embodiment of Fig. 1 is listed in Table 1 and Table 2.
  • the aspheric mirror surfaces are labeled A(1)-A(6) in the tables with A(1) corresponding to mirror M1, A(2) corresponding to mirror M2, and so on.
  • Four additional surfaces complete the description of this illustrative and exemplary embodiment with object OB and image IM representing the planes, where in a lithographic apparatus the mask and the wafer are arranged.
  • a surface designation is also made for the location of the aperture stop APE and intermediate image IMI. After each surface designation, there are two additional entries listing the vertex radius of curvature (R) and the vertex spacing between the optical surfaces.
  • each of the surfaces is rotationally symmetric conic surface with higher-order polynomial deformations.
  • the aspheric profile is uniquely determined by its K, A, B, C, D, and E values.
  • Each mirror uses 4th, 6th, 8th, 10th, and 12th order polynomial deformations.
  • the sag of the aspheric surface (through 12th order) in the direction of the z-axis (z) is given by:
  • h is the radial coordinate
  • c is the vertex curvature of the surface (1/R)
  • A, B, C, D, and E are the 4th, 6th, 8th, 10th, and 12th order deformation coefficients, respectively. These coefficients are listed in Table 2.
  • the optical system of this first preferred embodiment is designed to project a ring field format that is illuminated with extremely ultraviolet (EUV) or soft X-ray radiation.
  • the numerical aperture NAO at the object OB is 0.050 radians; at a 4x reduction this corresponds to a numerical aperture NA of 0.20 at the image IM.
  • the ring field 21 at the object OB is shown with Figure 2. It is centered at 118 mm from the optical axis, which contains the vertex of each of the aspheric mirrors. This annular field extends from 114 mm to 122 mm forming an arcuate slit with a width 23 of 8 mm. The extent 25 of the ring field 21 perpendicular to the scan direction 27 becomes 104mm. The central field point is denoted with the reference sign 29. At 4x reduction, this ring field becomes 2.0 mm wide in the scan direction at the image.
  • the incidence angles are well controlled so that the design is compatible with EUV or soft X-ray multilayer coatings.
  • this system exhibits very low incidence angles ranging from 2.9° to 12.5°.
  • the chief ray incidence angles for the chief ray CR from the central field point 29 are: Object: 5.2°; M1 : 6.5°; M2: 5.0°; M3: 12.5°; M4: 5.6°, M5: 8.6°, and M6: 2.9°.
  • a preferred system further enables EUV lithography by utilizing mirrors with low peak aspheric departure.
  • the maximum peak departure, contained on mirror M1 is 25.0 ⁇ m.
  • the other mirrors have low-risk aspheres with departures that range from 0.5 ⁇ m to 14 ⁇ m.
  • the low aspheric departures of the mirror surfaces facilitate visible light metrology testing without a null lens or Computer Generated Hologram CGH, resulting in surface figure testing to a high degree of accuracy.
  • An aspheric mirror with a very large peak departure is unproducible because it cannot be measured to the required accuracy to realize lithographic performance.
  • Table 3 summarizes the performance of the PPNPNP configuration of Fig. 1.
  • the table demonstrates that this first preferred embodiment is able to achieve lithographic performance with a resolution on the order of 30 nm (assuming a k1- factor of approximately 0.5).
  • the location of the aperture stop APE is selected so that the third order astigmatism contribution from the strong concave secondary mirror M2 is made very small.
  • the strongly undercorrected astigmatic contribution from the primary mirror M1 comes from the aspheric departure on M1 and is balanced by the M3/M4 combination.
  • the location of the aperture stop APE also effectively balances the third-order coma and distortion contributions from the primary mirror M1 and secondary mirror M2.
  • a hyperbolic profile is added to the primary mirror M1 in such a way as to create a large undercorrected spherical contribution, coma contribution, and astigmatism contribution, thus promoting good aberration correction allowing the residual wavefront error (departure from the ideal reference sphere) to remain exceedingly small.
  • aberration correction and resulting aberration balance reduces the composite RMS wavefront error is only 0.0125 ⁇ (0.17 nm), with simultaneous correction of the static distortion to less than 2 nm across the field.
  • This optical projection system has further benefits in that the system of Fig. 1 may be scaled in either numerical aperture or field.
  • an optical projection system for extreme ultraviolet (EUV) lithography including six mirrors arranged in a PPNPNP configuration is disclosed.
  • the plan view of this second preferred embodiment is shown in Figure 3, which demonstrates a PPNPNP configuration designed for EUV lithography at a wavelength of 13.4 nm.
  • the system is reimaging, and unlike the '310 and '079 embodiments, locates the intermediate image IMI' before the second mirror pair.
  • the intermediate image IMI' is located between mirror M2' and M3', helping to promote low incidence angle variation across mirror M5'.
  • This construction also enables low mean incidence angles on mirror M1', M2', M4', and M6'. These low incidence angles are advantageous for maintaining good multilayer compatibility.
  • the aperture stop APE' is located between M1' and M2' and is significantly spaced from either mirror, e.g., more than 200 mm.
  • this second preferred embodiment teaches that the tertiary mirror M3' may be located on the object side of the primary mirror M1' (i.e., closer to the object OB' than the primary mirror M1'). This feature departs drastically from the teaches of the prior art that show the tertiary mirror must be located either in close proximity to the primary mirror('079 patent) or on the image side of the primary mirror('310 patent). This location of mirror M3' enables a reduction in the overall length from object plane OB to image plane IM (total track length) by some 250 mm.
  • This decrease in total track length is accomplished by shifting the tertiary mirror from the image side of the primary mirror M1' to the object side of the primary mirror M1' and then decreasing the distance between mirror M1' and mirror M6'. This also allows the parent diameter of the tertiary mirror M3' to be smaller than either the primary mirror M1' or the secondary mirror M2'. These changes affect the angular condition of the chief rays upon reflection from the secondary mirror M2'.
  • Prior art teaches that the chief ray from the central field point must diverge from the optical axis after reflection from the secondary mirror ('310 patent, '079 patent, etc.), but now the chief ray CR' assumes a more parallel condition with respect to the optical axis OA'.
  • this chief ray CR' is made identically parallel to the optical axis OA'. This change in chief ray angle impacts the aberration balance in the design enough to form a distinct local minima, so that the residual aberration set seen in a Zernike decomposition of the wavefront differs from that of the first preferred embodiment.
  • the optical prescription of this second preferred embodiment of Fig. 3 is listed in Table 4 and Table 5.
  • the aspheric mirror surfaces are labeled A(1)-A(6) in the tables with A(1) corresponding to mirror M1 , A(2) corresponding to mirror M2, and so on.
  • the object OB' will be projected to the image IM' at 4x reduction in a ring field format with a telecentric imaging bundle (chief rays parallel to the optical axis OA' at the image IM').
  • Table 6 provides a performance summary demonstrating that this preferred embodiment is capable of lithographic performance at a wavelength of 13.4 nm.
  • this second preferred embodiment also utilizes a numerical aperture NA * of 0.20 at the image IM' and projects a 2 mm wide field in the scan direction.
  • NA * of 0.20 at the image IM' and projects a 2 mm wide field in the scan direction.
  • the system is compatible with reflective multilayer coatings since the incidence angles at each mirror are relatively small. As measured by the chief ray CR' from the central field point 29', the incidence angles range from 3.9° to 14.6°.
  • the exact chief ray incidence angles for the chief ray CR' from the central field point 29' are: Object OB': 5.6°; M1 : 7.2°; M2: 4.4°; M3: 14.6°; M4: 8.8°, M5: 9.7°, and M6: 3.9°. Again, these low incidence angles are a key enabling element for EUV lithography since the low incidence angles minimize the multiplayer induced amplitude and phase errors that have an adverse impact to lithographic performance.
  • the composite RMS wavefront error across the field is 0.0131 ⁇ (0.18 nm), ranging from 0.0095 ⁇ (0.13 nm) at the best field point to 0.0157 ⁇ (0.21 nm) at the worst.
  • the distortion of the chief ray has been reduced to less than 1 nm across the field.
  • this combination of telecentric imaging, a highly corrected wavefront, and essentially no distortion demonstrates that this system is suitable for modern lithography at soft x-ray or extreme ultratviolet wavelengths.
  • This preferred embodiment has further advantages in that the system of Fig. 3 may be scaled in either numerical aperture or field to address even more advanced requirements.
  • the results of a simple numerical aperture scaling experiment demonstrate that this preferred embodiment easily supports scaling to larger numerical apertures.
  • an analysis of the composite root mean square (RMS) wavefront error was made at a numerical aperture of 0.22, , which represents a 10% increase to the value shown in Table 4.
  • the composite RMS wavefront error was found to be 0.027 ⁇ (0.36 nm), a level that supports lithographic quality imaging.
  • the third preferred embodiment is shown in Fig. 4. Like the first and second preferred embodiments, this system utilizes a re-imaging PPNPNP configuration with a physically accessible aperture stop APE" that is located between the primary mirror M1" and secondary mirror M2". And like the first and second embodiments, the intermediate image IMI" is located between the secondary mirror M2" and the tertiary mirror M3". Similar to the second embodiment, the tertiary mirror M3" is located on the object side of the primary mirror M1". This particular embodiment differs from the second preferred embodiment in that the chief ray CR" from the central field point 29" converges toward the optical axis OA" after reflection from the secondary mirror M2", thus forming another advantageous projection system with distinct characteristics.
  • Table 7 lists the vertex radius of curvature as well as the separation between these mirrors along the optical axis.
  • Each mirror is aspheric and labeled A(1)-A(6) in the tables with A(1) corresponding to mirror M1", A(2) corresponding to mirror M2", and so on.
  • the prescription of the aspheric surface deformation per equation (1) is listed in Table 8.
  • the object OB e.g. a pattern on mask or reticle
  • the image IM will be projected to the image IM" at 4x reduction in a ring field format with a telecentric imaging bundle (chief rays parallel to the optical axis at the image).
  • a semiconductor wafer is arranged.
  • Table 6 provides a performance summary demonstrating that this preferred embodiment is capable of lithographic performance at a wavelength of 13.4 nm.
  • this third preferred embodiment also utilizes a numerical aperture NA of 0.20 at the image IM" and projects a 2 mm wide field in the scan direction.
  • NA numerical aperture
  • the incidence angles range from 3.9° to 13.9°.
  • the exact chief ray incidence angles from the central field point are: Object OB": 6.6°; Ml : 8.0°; M2: 4.4°; M3: 13.9°; M4: 8.6°, M5: 9.6°, and M6: 3.9°.
  • Object OB 6.6°
  • Ml 8.0°
  • M2 4.4°
  • M3 13.9°
  • M4 8.6°
  • M5 9.6°
  • M6 3.9°.
  • the composite wavefront error across the field is 0.0203 ⁇ (0.27 nm), ranging from 0.0148 ⁇ (0.20 nm) at the best field point to 0.0243 ⁇ (0.33 nm) at the worst.
  • the distortion of the chief ray has been reduced to less than 1 nm across the field.
  • This combination of telecentric imaging, a highly corrected wavefront, and essentially no distortion demonstrates that this system is suitable for modern lithography at soft x-ray or extreme ultratviolet wavelengths.
  • the design can also be scaled in numerical aperture or field like second preferred embodiment.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Cette invention concerne un système de projection optique aux ultraviolets extrêmes (EUV) comprenant au moins six surfaces réfléchissantes pour la reproduction d'un objet (OB) sur une image (IM). Ce système est de préférence conçu pour former une image intermédiaire (IMI) sur un trajet optique allant de l'objet (OB) à l'image (IM) entre un deuxième miroir (M2) et un troisième miroir (M3), de telle sorte qu'un premier miroir (M1) et le deuxième miroir (M2) forment un premier groupe optique (G1) et que le troisième miroir (M3), un quatrième miroir (M4), un cinquième miroir (M5) et un sixième miroir (M6) forment un second groupe optique (G2). De plus, le système comprend de préférence une ouverture relative (APE) disposée sur un trajet optique allant de l'objet (OB) à l'image (IM) entre le premier miroir (M1) et le deuxième miroir (M2). Le deuxième miroir (M2) est de préférence concave, le troisième miroir (M3) de préférence convexe. Chacune des six surfaces réfléchissantes reçoit un rayon principal (CR) à partir d'un point central selon un angle d'incidence inférieur à 15° environ. Le système selon l'invention possède une ouverture numérique supérieure à 0.18 au niveau de l'image (IM). Ce système est de préférence conçu pour qu'un rayon principal (CR) converge vers l'axe optique (OA) pendant qu'il se propage entre les deuxième (M2) et troisième (M3) miroirs.
EP01270809A 2000-12-12 2001-12-06 Systeme de projection pour lithographie euv Withdrawn EP1342128A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25516100P 2000-12-12 2000-12-12
US255161P 2000-12-12
PCT/EP2001/014301 WO2002048796A2 (fr) 2000-12-12 2001-12-06 Systeme de projection pour lithographie euv

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EP1342128A2 true EP1342128A2 (fr) 2003-09-10

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JP (1) JP2004516500A (fr)
KR (1) KR20040024536A (fr)
WO (1) WO2002048796A2 (fr)

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EP1615076A1 (fr) * 2001-01-09 2006-01-11 Carl Zeiss SMT AG Système de projection pour la lithographie EUV
JP2004138926A (ja) * 2002-10-21 2004-05-13 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2004158786A (ja) 2002-11-08 2004-06-03 Canon Inc 投影光学系及び露光装置
JP2004252358A (ja) * 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系及び露光装置
JP2004325649A (ja) 2003-04-23 2004-11-18 Canon Inc 反射型投影光学系、露光装置及びデバイスの製造方法
US7554649B2 (en) 2003-09-02 2009-06-30 Canon Kabushiki Kaisha Projection optical system, exposure apparatus and device fabricating method
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KR20040024536A (ko) 2004-03-20

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