EP1336245A1 - Oszillatorschaltung - Google Patents
OszillatorschaltungInfo
- Publication number
- EP1336245A1 EP1336245A1 EP01996922A EP01996922A EP1336245A1 EP 1336245 A1 EP1336245 A1 EP 1336245A1 EP 01996922 A EP01996922 A EP 01996922A EP 01996922 A EP01996922 A EP 01996922A EP 1336245 A1 EP1336245 A1 EP 1336245A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- oscillator
- amplifier
- oscillator circuit
- circuit according
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/203—Electrical connections
- H10W44/206—Wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Definitions
- the present invention relates to an oscillator circuit.
- VCO voltage-controlled oscillators
- Integrated VCOs can be implemented as LC oscillators, for example. While the integration of the resonant circuit capacitances for such VCOs is relatively simple and can be implemented with a small chip area requirement, the integration or implementation of the resonator inductances is relatively complex. Possible implementations of inductors are, for example, spiral arrangements which are arranged, for example, on an integrated circuit or printed circuit board, active inductors which can be implemented with a capacitance and a gyrator circuit connected to them, and the use of actually parasitic inductive properties of bonding wires. As a rule of thumb, the inductance of a bond wire is approximately 1 nH per mm.
- bond wires as inductors. In LC oscillators, the high quality that can be achieved. In the case of the bond wires, a distinction is made between pads and pads, that is to say contact points on a chip, to a pin, from a pad to a carrier element of the chip and from one to another pad of the chip. CQ ß 1 4-> 1 1 ß.
- the chip is preferably attached to the leadframe using an adhesive.
- This adhesive can be electrically and / or thermally conductive.
- a resonance transformation circuit for coupling the oscillator core and the evaporation amplifier, which comprises a pair of coupling capacitances connected to the first circuit node, each of which is connected to a further inductance in a second circuit node.
- the evaporation amplifier is connected to the second circuit node.
- the resonance transformation has the advantage, on the one hand, that the oscillator core, which can be designed to be tunable, implements a low-resistance circuit part with a high-quality resonator, while a series resonant circuit is formed with coupling capacitances and further inductances, which can be integrated, which resonance transformation takes place between the low-resistance first circuit node and the high-resistance second circuit node.
- the evaporation amplifier which can be a differential amplifier, for example, is connected to a high-resistance circuit node.
- the resonator in the oscillator core can be designed to be tunable as a parallel resonator. This can guide the integrated series resonant circuit in terms of frequency within its high bandwidth.
- the further inductance can be connected directly to the supply potential connection, the evaporation amplifier can be connected to the reference potential connection, for example via a current source.
- the resonance transformation also causes a higher amplitude of an oscillating one at the second circuit node
- a bond wire L1 is attached to a contact point P1 on the front of the chip and is attached with its free end to the leadframe LF.
- the structure of the leadframe LF ensures an electrical connection of the connections of the bond wires L1, LIX attached to it and via the conductive adhesive KL to the substrate connection or rear connection of the chip CH.
- the oscillator circuit described is suitable for applications in the gigahertz range and has a low phase noise.
- the differential amplifier in the evaporation amplifier EV can also be constructed in bipolar technology with NPN transistors instead of the NMOS transistors described.
- the bond wire inductors L1, LIX are of high quality. Such bond wires from contact points (pads) to a lead frame or die pad are sometimes also referred to as bottom bonds, down bonds or die bonds.
- the peculiarity of the present oscillator circuit is that despite the bond wire inductors L1, LIX connected directly to the reference potential, the high-frequency and amplification-less NMOS or
- NPN transistors can be used in a conventional differential amplifier to dampen the oscillator.
- the tunable resonator in the oscillator core OC guides the integrated series resonant circuit CK, CKX, L2, L2X with regard to the frequency within its high bandwidth.
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Semiconductor Integrated Circuits (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
Es ist eine Oszillatorschaltung mit einem Oszillator-kern (OC), welcher zwei Kapazitäten (D1, D1X) sowie zwei als Bonddraht ausgebildete Induktivitäten (L1, L1X) aufweist, und ein mit dem Oszillatorkern (OC) gekoppelter Entdämpfungsverstärker (EV) angegeben. die Induktivitäten (L1, L1X) des bevorzugt abstimmbar ausgeführten Oszillatorkerns (OC) sind mit je einem Anschluss mit einem Leadframe (LF) verbunden, auf welchem ein Chip (CH) angeordnet ist, der Oszillatorkern (OC) und Entdämpfungsverstärker (EV) umfasst. Zur Kopplung von Oszillatorkern (OC) und Entdämpfungsverstärker (EV) ist bevorzugt eine Resonanztransformationsschaultung (TR) vorgesehen. Der angegebene Oszillator ist zur Anwendung im Mobildunk bei hohen Anforderungen an das Phasenrauschen geeignet.
Description
Beschreibung
Oszillatorschaltung
Die vorliegende Erfindung betrifft eine Oszillatorschaltung.
Beispielsweise im Mobilfunk werden vollintegrierte spannungsgesteuerte Oszillatoren VCO, Voltage Controlled Oscillator, im Gigahertz-Bereich eingesetzt, an die hohe Anforderungen bezüglich Phasenrauschen gestellt werden. Zugleich besteht der Wunsch nach integrierten Schaltungen mit möglichst geringem Platzbedarf, Chips mit möglichst geringer Anzahl von Anschluß-Pins sowie guten Eigenschaften bezüglich elektromagnetischer Verträglichkeit.
Integrierte VCO können beispielsweise als LC-Oszillatoren realisiert sein. Während die Integration der Resonanzkreiskapazitäten für derartige VCO verhältnismäßig einfach und mit geringem Chipflächenbedarf realisierbar ist, ist die Integra- tion beziehungsweise Realisierung der Resonatorinduktivitäten verhältnismäßig aufwendig. Mögliche Realisierungen von Induktivitäten sind beispielsweise spiralförmige Anordnungen, welche beispielsweise auf einer integrierten Schaltung oder Leiterplatte angeordnet sind, aktive Induktivitäten, welche mit einer Kapazität und einer daran angeschlossenen Gyratorschal- tung realisierbar sind, sowie die Nutzung eigentlich parasitärer induktiver Eigenschaften von Bonddrähten. Als Faustformel gilt dabei, daß die Induktivität eines Bonddrahtes ca. 1 nH pro mm beträgt .
Der Vorteil von Bonddrähten als Induktivitäten .in LC- Oszillatoren liegen dabei in der erreichbaren hohen Güte. Bei den Bonddrähten unterscheidet man Bonden von Pads, das heißt Kontaktstellen auf einem Chip, zu einem Pin, von einem Pad zu einem Trägerelement des Chips sowie von einem zu einem anderen Pad des Chips .
CQ ß 1 4-> 1 1 ß .
1 • CD 1 1 Φ Φ 1 Φ -Q ß -ß N φ 4J
(L) 0 ß ß CQ -H CQ H 4-> rö Φ 4-> =ß -H Φ ü 4-1 -ß 1 CQ tn S -H rö 1 ft Φ rö M •H rH CQ -H -ß 4-1 Dl 1 Φ -Q ß :rö CQ 0 «. -H rö CD .4 Ti -H -ß H Φ Φ H =rö M -H Φ 4J Φ t! CQ Φ -ß 0 44 Φ
© 4-> • •~ -— . O ß -α CQ c H CΛ -H -ö tn φ φ CΛ rH rö ß Ti 4J ^1 Es r-l o s 0 tn CD 4-> 0 u rö N φ i -H -Q 4-) 4J N ε rö rö 44 ω 0 m ß 44 rö PQ •5 -ß ^ ^ CQ 4-> 4-1 i t B Φ rö CΛ CQ ß ß φ rH Ti ß
> «* ß •H rH CQ 4J rH O O =rö ß ß Φ 4-) Φ 1 -H φ Φ Φ ß rH Φ rö
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0 -H ß CQ O 4-> rH U .. 4J ,ß Φ ^ =ß >. CΛ n tn £ > N ü 44
£ ß ^ (D rH 1 -α rH 4-4 > tn H φ ; CJ H ß -ß Es ß -H φ =rö rö
1 rö CQ ε CD CJ 0 rö Φ Φ ß t3 t3 Φ Φ υ rH ß CQ rö ~ 4-> 4-1 ß rH -ß
CD M 4-> CD σ. ι-4 4 H 4J tn • CΛ 3 • Φ •d B -ß -H Φ ß 0 •H ß . ti -H 44 u
CQ U -H rH CD rö f CQ CQ 4J O tu 0 4 ß φ -ß Φ i-H ß n -Q ti Φ ß & Φ Ά CQ fö ß & .4 rH Ti 4J 3 s S CQ H •ö Φ CQ M ß rH 0 -ß Ti =ß -H ß
-ß ß U ε ß Φ ß X rö φ 0 >. Φ
4-J ε Φ φ Φ rö D -) Φ ß 4-) .. Λ Φ
CM rö ti H CD J4 -H 0 rö S = ^ tn M tn Ti Φ CQ ß LT) rö CQ H • CQ U tn
1 t- -H CQ rö N Q 4J CQ N 4-> LD CQ φ ß ^. l -H -H n rH Φ ß tn Φ -H
ES u CD rö 0 CQ Ö & 0 tu Φ m tn "Ö rö CQ 0 0 Es 0 ß rH Dl Φ 0 ß ß Φ
0 .. -H -ß g O Φ 0 -H 4-1 0 CQ ß Φ > 4-1 0 £ 0 ß -H ti -H -H ß 4-1 Φ -ß
1-4 = ω Ti CM 1 CQ w ^ r-l 1 4-1 . 3 tn CQ 4-1 CQ Φ N 0 Ti 4-J ß CQ Dl CJ
4-> -H U φ CJ Φ H 4-1 rH ß ß φ ß CQ φ φ 4 CQ > rö Ti -H ß CQ
CΛ Φ (Ö 4-3 ^ 4J h4 -H • O 0 ß ß ß Φ ß 4-1 CQ w -H 0 ß ß ti -H ß o rH 4-> CQ , CQ O Φ CQ 4-) H > rö -H B -H a rö H Φ I ß Φ -H 0 Dl 54 rö
S cO CΛ -H 0 -Q B Ö Φ N ft Φ Φ Φ P. -H rö -ß M CΛ J Φ JJ η ß ß Φ ti u ü 1 0 rö -H • -H ) rö - t ^ CQ -H rH ß -ß Ti CM H J 4-> =rö £ rf! ß Dl ß
CQ Ti ^ A ß Φ T3 Φ M CQ CQ ß PQ φ u Φ 1 ^ =rö 4-> 0 Ti Φ
N CD -H C CQ ß Φ Φ Φ tn 1 -U ß -H 0 ^u -Q Φ -s •. O ti 4J -H fc^ M ß ß CQ
X ti rH CO •σ rH Φ -ß α rH -Q rö 0 -H -H rH -H ß u e ß CQ 0 rH O φ -H φ -H Φ rö
O CM 0 <Φ CD rö 4 ω 0 rH
1 α ΛJ 0 3 Φ rö 4-> Φ CQ rö Φ ß π rö O 4-> > -H Φ Ti 44 ß -ß
CΛ iH j«. =rö CQ Φ φ 0 U) υ Φ rö > -H -ß =rö ] ti -H +J CQ ti -H CM co -ß o -H 4 φ 4-) r CQ tf ß -H Es CQ υ -ß N 4J φ 4 M Φ 44 W
• - ö Φ -> ß CQ 0 CD -H tn -H CQ υ ft rö -H rH -H 4-> N ß =rö φ tu φ ^ ß M ß -H ti φ
H -H 0 -H -Q > JH Φ 4-) =rö J rH O : •H rH O 0 φ ß Ti Ti rö ß Φ 4J
-5 -Q rö -H 0 -Q ^ rH ^ J rö P3 g ß Φ CM 4-1 0 4J Ti ß Ti Φ -H ß ! r CD Ti 4-> > rö rö n rö φ 4-1 N 0 •b -H & e cn 4-> • CQ ß H -ß φ Ti Ti tn r4 rö CQ M T-S 4-> 1 4-> ß « ß Es Φ -H • rH 0 Φ H U -Q ß
0 ß r rö 4-) ß fi Ö 0. 4J N rö φ B -H 0 -ß -ß Ti rH φ S Dl 1 ß ß ß Φ ~ Φ
4-> 4-) JH - -ß CQ Ti φ TS 0 -H 4-1 X 4J -Q φ Φ CQ ü U > CQ 4J Φ <: -H Dl ß -H
44 rö ß H CM -H ß 4-) α W Λ -H ~\ CQ φ -ö ß ß -H 4J CΛ ~. tn -ß 4J CM Φ Φ Es
-H rH O ^^ H =rö -H u 0 1 -H Φ *. rH -H LO ß rö ti • -H -Q 0 rH ^ ß J 0 4-> CQ Ö -ß PQ S 4-! -H Φ tn CQ N Φ ε n ß Φ ß Ti rH Φ CQ rß -H CD J CJ CQ -H φ Ö ü i -H CQ Φ -H ß 4J 4-) n ß Ti -H ß ti Dl υ ü H 4-1 C > rH Ö φ CQ rH -H Λ CQ £ -H =tÖ Φ ß ß . ß Ti -Q ß 0 ß φ
CQ CQ H -H XU -H Φ Φ Cü M U) 0 S-i CM CQ QΩ Φ Φ >. rH rö ß Di Φ > N 4J
-y O H CD ti 4J 4-) -ö 0 O CM CΛ ^ ^ 0 =0 ß =0 tn ε = 0 Ά 0 Φ Dl 1 ß =ß υ H CΛ CD Φ . i =rö α in P r-l n 4 4-> 4-1 ß N ß ß 0 > CQ CQ +J r-l ß ti rö O ß TJ ß P 4-> 4J rö tn 1 ß 0 ß rö rH N tn ß ! CJ ß Φ Φ Φ ti Φ ^ ^ -H ti - -H P 0 H ß rH rö rH 0 > ß Ti -H -ß Ti D Φ
P rH 4-> (ü .
90 -ß Ö ι 4-1 rö rH C-4 Φ ß ft P CQ -H ß CQ ü ß xi rH
ß =ß H -H Φ - O rH CQ - -H -H -H -H -H fij 0 i3 Φ -H ß ß =rö Φ ß 0
.4 0 03 σ» ß ω 4-1 1 4-> Ö Φ Φ rö -H φ N ft -ß Φ 0 ε J -H CQ N ti rH Λ 4 -ß tu rö H -H -Q φ 4J ! -H Q 5 Φ ß Λ Λ CQ CQ U -M Φ ß CQ Φ 44 rö rH rH
O τs 4-> . φ Dl Λ P Φ CQ M O Ti -ß Ti CΛ υ rH ti -ß W & tn rö Φ ß Φ ^ O CJ. CQ rö ( ö CQ -H 3 0 1 ß B ß ü rö O M rH Φ ü 1 -H 44 -ß ß
O ß 0 4-> CM O φ ß fi 3 Φ P 0 0 0 0 U Φ 0 -H -H ß ß S -H rö •H -H U -ß ß u -H
H u U3 H > σ. rö T3 H N ß ! jg rH 4-1 ^ 4-1 > CQ CQ tn CJ 4-i -ß rH ι-4 U <: Φ
44 ß ß ti
1 1 .. 1 es 44 ß 1 ß φ Φ ß
1 >4 -H O 1 44 ε ß ß 1 ß ti rö 1 ti . rö Ti T3 ß ß 5H rH Φ Φ ß ß ti CQ φ -H rH 44 rö 4-> Φ ti φ ß X 44 •~ ß -H -H 1 Φ f rö ß X ti 0 -H ß 44 X3 x Dl P >. Φ Φ > -H •H 44 ß rö U Φ iM Ti
© -ß -H Ti CQ Φ CQ •H -. Xl J rö .. •H ß Dl i Φ ti ε rö Q Ti Φ CQ Φ ß u Φ ß Dl A. iH 44 Φ 44 rö CQ 44 iH 44 • -H =rö φ CQ φ SH iH ß Ti 0 o CQ ω ß ß ti Φ rH rö ti ß ß Φ CQ ß Φ ti ß 44 tn ß 44 φ ^ U 44 ti CQ
54 Ti ß 0 > Φ 44 -ß Ti XI 0 rH 0
Q ■< 0 tn Φ -H CQ EH Φ -ß Φ =rö ß CQ >
0 ß 44 4-> 44 a ß Ti =rö 4H Φ ß =rö 4J iH rö -Q u Φ 4H » H 4-3 ß =rö rH rö ß a rö Φ ß ß ti Φ CQ Φ ε Xl ti 44 EH X ß ü. -H 44 a in CQ U rö 4 rö rH Φ 0 44 0 Φ ß fH -Q α. ε Φ rö Ti rö CΛ -H rH =rö a φ ß rH 4-> -H -ß rH ß X ti -H PQ 4-> Φ 44 rö Ti -Q Ti rH H ti -ß IM 4-1 0 -H
H =rö > u -H -H φ Φ Φ CQ ß t H ß
-H B Φ Φ i a φ φ ß =rö Φ -H X a CM
4-> -H CΛ N Φ Di X CQ CQ ti Φ φ 44 Ti 44 4H Φ 0 ti P tn Φ 44 Ti > Φ -H
N -H 4-> CQ ti M rH Φ CQ ß -H rH Ti ß 44 PQ Φ =rö CQ 44 iH -H Di X! ß
CQ N X ß Ti O Φ ^ =rö CJ rö CQ -H Φ -H rö <: -H 44 • ti CQ -H 0 44 J rö
O rö ß Φ ß -H 4-1 4J =ß ε 0 φ CQ -Q Φ Φ ti -H ß EH Φ Φ 4H Λ. 0-3
P-. Ti 44 ß ε Ti rö CQ ß. CQ Φ rH X φ J- • 1-4 φ Φ -H T5 rH iH ß ß ε 44 rö ß CQ -ß ti rH ß -ß 44 Ό D 44 Ti 1- Φ ti Φ Ti rH rö -ß
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Φ φ Φ ε CQ -H rH rH Di φ 44 tn <& iH -H 4-> Xl CQ -H Φ -H -ß ß ß -H
4-1 4-1 Φ B Φ X. ß 1 -r-) -H ß ß Φ a Φ Φ υ =ß Φ Dl ß Φ ε =rö Φ rö CM ß
4-> CQ CQ ß ß ß υ ß SH ε rö rH ß -H ß 4-1 rH =rö -H SH H SH ß- rH Φ
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44 Φ Φ -H > A. rö ß H ß A. CQ Φ ß Φ -H φ Di CQ 44 CQ 0 Φ ß a 4J X ß T, a Φ -H ß Di 4-> ß ß ß Φ 44 =rö -H 44 ß ~^ -ß -H CQ :CÖ ß ! 4 44 44 =rö CQ 4-> Ti Φ Ti -H ß -H Φ rö Φ Φ rH -H S4 rH =rö -H Ti J ε Di CQ Ti
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Ti CQ Φ ß ft CQ ti N Φ -H Ti υ φ rH * ü rH rH CQ -H -H ü CQ CQ TJ i -H rö ti -H X -H rö Di 0 Φ . ß Φ ß CΛ ß a Ti 44 φ a Φ Ti . ß Φ 44 -H ß ß Φ iH
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CQ CQ CQ rö Φ Φ ß -H Ti CQ ti CQ 44 Φ ß ß rö ß Φ ß rö 0-2 -H -H ti ti Φ -H T) ti ti φ Ti tn =0 O W 4J m Φ ß O Φ CQ Ti Φ ß tu -Q rH rö tu ß B Φ Φ Φ rH -ß ß 0 0 Ti
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Ti tn Φ φ Es •H φ -H 1 Φ Φ Φ -Q ß Φ rö > rö ti rö ß ß ß ti Φ rö rH rH φ ß ß 44 N ε ß ε CQ -Q rH -H Φ φ rö rH J tu Φ Ti φ Φ Φ EH ES tu 4H -H rH > • ».
O -H Di -H -H -H Di 0 X! S4 -H tn rH .. tn ß 44 Ti 03 ß Φ -H ß X!
44 ß Φ Φ ß Φ Ti ß £ rH Dl Ti CQ 4 Φ
O ε 44 CQ =rö ε ß ß ß M ß ε 0 -H -Q IS1 4 ß υ ti ß Es Φ Φ ß ß rö Φ ß -H 4-1 φ CQ rö ti Φ =0 rö ß Φ -H φ ti Φ rö CQ -H rö -H m 44 1 N ß 44 1 ß D tu 44 1 rö ε CQ Ti -H P EH T, X rH -Q P Φ i Dl Q P O ε X rH
1 4-J ß ti φ ß Dl 1 ß φ
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Tf Φ ". Φ Xl Φ X O N < Φ ti =rö Φ Φ 44 rH 44 SH CQ 1 X CQ 4H
© N 44 rH u =rö rH CQ CQ ß 0 44 TJ Ti ß 4ß 0 0 φ rH Φ ß CQ Ti
Φ Φ Φ 44 44 S4 Xl O ß φ 44 CQ υ O a > 44 -H Dl tn φ 0 rö ω XI ß 4J rH Ti ü Φ 44 ß rö rH ti .. CQ CQ CQ Φ ß ß ß rH Φ
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PQ ß N ß N Dl tn -H α. ε Di Ti ß -H Φ φ
N iH & Φ tu rö 5 SH Φ -H CQ «. ß =ß 44 ß SH 3 ß ß ß 44 φ Di Ti
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Ti ü rH Φ CQ Φ ü XI 44 P ß 5H ß rö > ß -H Φ D 44 Dl =ß X SH SH CQ rö
Xl rö ^ -H X! XI 44 CQ =rö Φ =rö -H X -H Xl > N ß rH ü Φ Ti a ü CM 44 rH rH Φ 0 -H ß SH rH CQ 44 Φ CJ SH Φ XI 44 ß Xl CQ Ti Ti -H φ ß CQ X! rö rH CQ φ rö φ a 44 CQ CQ CQ CQ ß SH ß Ti ü ß Ti CJ SH ß Xl 44 rö φ -H =ß tu X rH rH ß SH CQ rö SH SH N Φ X ß rö ß ß CQ 0 Dl 0 CJ -H
-H 44 •. rö -H Φ -H 44 Φ 44 O ti o ß ß Φ -H ß 44 ß PQ Φ
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44 44 ε Φ X! 44 O Φ rH SH ß 4H φ N < 5H 44 IS1 SH Φ Φ -H CQ CQ • 44
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Φ ^ φ X! -H 44 44 Φ Φ Ti ü ß -H Ti 44 Φ 44 -ß 44 SH Φ 44 X) Ti CQ
44 44 ß XI ß ε -H ß CQ Es Φ CQ PQ Xl AI X Di =rö rö -ß SH 3 Dl ß SH
-H ß Φ CQ ε Φ tn ε ti CJ -H ß ß ß ß 5H X! =ß 4ß ß ß CΛ O 44
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EH -H rH CQ Φ X! Φ Ti SH 4-> ü Φ rö rö -H N > ß 5π 1 in Ti
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Φ -H rö -H 4H -H rH a Φ -H 44
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Φ ß CQ Ti rö ß ε ß ß ß -H rH -H SH SH φ φ -H CQ ES -H J N rö CQ Xl ß Ti Φ CQ ß Φ φ H 0 0 N 44 P Φ Φ ß ß Φ ß X Ti 44
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A! 44
O ε φ -H 5H ü rH ß 44 X υ ß ß Ti φ 1 Di 44 ß rö ß Φ ß X SH -H 4H rö Φ Φ -H 54 Φ -H Φ -H rö =ß =ß rö -ß ß -H CJ -H CQ φ -H Φ ß ES Φ υ ß Φ ß Φ Φ
44 ß Ti P 44 > CQ Es CQ rH 44 tf CQ 0 ß P XI φ -H 03 44 tn H N Ti CQ H TJ rö CQ XI
IX) O LO o o rH rH . n ΓO
Die Befestigung des Chips auf dem Leadframe erfolgt bevorzugt mit einem Klebstoff. Dieser Klebstoff kann elektrisch und/oder thermisch leitfähig sein.
In einer weiteren, bevorzugten Ausführungsform der Oszillatorschaltung ist zur Kopplung von Oszillatorkern und Entdampfungsverstarker eine Resonanztransformationsschaltung vorgesehen, welche ein Paar von an den ersten Schaltungsknoten angeschlossenen Koppelkapazitäten umfaßt, die in einem zweiten Schaltungsknoten an je eine weitere Induktivität angeschlossen sind.
An den zweiten Schaltungsknoten ist dabei der Entdampfungsverstarker angeschlossen. Die Resonanztransformation bringt zum einen den Vorteil, daß der Oszillatorkern, der abstimmbar ausgeführt sein kann, einen niederohmigen Schaltungsteil mit einem Resonator hoher Güte realisiert, während mit Koppelkapazitäten und weiteren Induktivitäten, welche integriert sein können, ein Serienschwingkreis gebildet ist, der eine Reso- nanztransformation vornimmt zwischen dem niederohmigen ersten Schaltungsknoten und dem hochohmigen zweiten Schaltungsknoten. Dies hat den Vorteil, daß der Entdampfungsverstarker, der beispielsweise ein Differenzverstärker sein kann, an einen hochohmigen Schaltungsknoten angeschlossen ist.
Der Resonator im Oszillatorkern kann dabei als Parallelresonator abstimmbar ausgeführt sein. Dieser kann den integrierten Serienschwingkreis innerhalb seiner hohen Bandbreite frequenzmäßig führen. Die weitere Induktivität kann direkt an den Versorgungspotentialanschluß angeschlossen sein, der Entdampfungsverstarker kann, beispielsweise über eine Stromquelle, an Bezugspotentialanschluß angeschlossen sein.
Die Resonanztransformation bewirkt weiter, daß am zweiten Schaltungsknoten eine höhere Amplitude eines oszillierenden
Signals auftritt als am ersten Schaltungsknoten. Dort hat die geringere Schwingungsamplitude den Vorteil, daß die Kapazitä-
φ 1 ß 1 1 CQ rH 1 SH CQ 44 1 Φ -H Φ rö rH rH rö 1 AI 1 1 Φ X rH CQ 1 1 -H Ti Φ 1 rH AI rö ß 1 rH
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CQ φ SH ß 44 44 SH rH ε υ φ -H ß Φ Φ rö ß 0 . CQ Φ TJ ß Dl
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H rö PQ ß ü Pn AI 4H CQ rH AI Φ -H CJ TJ CΛ Φ SH tn Φ Di ß =ß o Φ -H SH
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Φ φ -H ß -H SH ß ß ε :(Ö 1*. SH Φ CQ rö SH Φ CQ a ß a 0 ß X ISl A ß φ φ -H 44 X Φ -H -H ε X Φ D) -H -H 4ß X ß φ o rö 0 > rö φ ß ß Φ ß
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-H Λ -H SH P3
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An einer Kontaktstelle Pl an der Chip-Vorderseite ist ein Bonddraht Ll befestigt, welcher mit seinem freien Ende auf dem Leadframe LF befestigt ist. Die Struktur des Leadframe LF gewährleistet dabei eine elektrische Verbindung der auf ihm befestigten Anschlüsse der Bonddrähte Ll, LIX miteinander und über den Leitkleber KL mit dem Substratanschluß oder Rückseitenanschluß des Chips CH.
Die beschriebene Oszillatorschaltung ist für Anwendungen im Gigahertz-Bereich geeignet und weist ein geringes Phasenrauschen auf .
Der Differenzverstärker im Entdampfungsverstarker EV kann anstelle der beschriebenen NMOS-Transistoren ebenso in Bipolar- Technik mit NPN-Transistoren aufgebaut sein.
Die Bonddraht-Induktivitäten Ll, LIX weisen eine hohe Güte auf. Derartige Bonddrähte von Kontaktstellen (Pads) zu einem Leadframe oder Die-Pad werden gelegentlich auch als Boden- Bonds, Down-Bonds oder Die-Bonds bezeichnet.
Die Besonderheit bei vorliegender Oszillatorschaltung ist, daß trotz der unmittelbar an Bezugspotential angeschlossenen Bonddraht-Induktivitäten Ll, LIX dennoch die hochfrequenzmä- ßig und verstärkungsmäßig günstigeren NMOS- beziehungsweise
NPN-Transistoren in einem herkömmlichen Differenzverstärker zum Entdämpfen des Oszillators einsetzbar sind.
Dabei führt der abstimmbare Resonator im Oszillatorkern OC den integrierten Serienschwingkreis CK, CKX, L2 , L2X bezüglich der Frequenz innerhalb seiner hohen Bandbreite.
Die Verwendung anderer Entdampfungsverstarker als der gezeigte, beispielsweise mit nicht galvanisch kreuzgekoppelten son- dem induktiv oder kapazitiv kreuzgekoppelten Transistoren, liegen dabei im Rahmen der Erfindung.
Bezugs zeichenliste
BD Bonddraht
CH Chip
CK, CKX Koppelkapazität
Dl, D1X Kapazität
EV Entdampfungsverstarker
GND Bezugspotentialanschluß
IQ Stromquelle
Kl, K1X Erster Schaltungsknoten
K2, K2X Zweiter Schaltungsknoten
KL Klebstoff
LF Leadframe
Ll, LIX Induktivität
L2, L2X Weitere Induktivität
OC Oszillatorkern
OS Oszillatorschaltung
P Pin
Pl. P1X Kontaktstelle
TI, T1X Transistor
TR ResonanztransformationsSchaltung
US Steuerspannung
VCC Versorgungspotentialanschluß
VQ Spannungsquelle
Claims
1. Oszillatorschaltung (OS), aufweisend
- einen Oszillatorkern (OC) mit einer ersten Kapazität (Dl) und einer zweiten Kapazität (DIX) und mit einer ersten Induktivität (Ll) und einer zweiten Induktivität (LIX) , die in einem ersten Schaltungsknoten (Kl, K1X) mit je einer Kapazität (Dl, DIX) verbunden sind und
- einen Entdampfungsverstarker (EV) , der mit dem Oszillator- kern (OC) und mit einer Versorgungsspannungsquelle (VQ) , die einen Versorgungs- und einen Bezugspotentialanschluß (GND) hat, gekoppelt ist,
- wobei Oszillatorkern (OC) und Entdampfungsverst rker (EV) auf einem Halbleiterplättchen (CH) , das eine Vorderseite und eine Rückseite hat, integriert sind, d a d u r c h g e k e n n z e i c h n e t, daß die erste und zweite Induktivität (Ll, LIX) jeweils als Bonddraht ausgebildet sind und dabei jeweils mit einem ersten Anschluß mit an den ersten Schaltungsknoten (Kl, K1X) ange- schlossenen Kontaktstellen (Pl, P1X) und mit einem zweiten
Anschluß mit einem Träger (LF) , auf dem das Halbleiterplättchen (CH) mit seiner Rückseite befestigt ist, verbunden sind.
2. Oszillatorschaltung nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t, daß die erste und zweite Induktivität (Ll, LIX) mit ihren zweiten Anschlüssen jeweils an den Bezugspotentialanschluß (GND) der Oszillatorschaltung (OS) angeschlossen sind.
3. Oszillatorschaltung nach Anspruch 1 oder 2, d a d u r c h g e k e n n z e i c h n e t, daß das Halbleiterplättchen (CH) ein p-Substrat hat.
4. Oszillatorschaltung nach einem der Ansprüche 1 bis 3, d a d u r c h g e k e n n z e i c h n e t, daß das Halbleiterplättchen (CH) rückseitig mit einem Klebstoff (KL) auf dem Träger (LF) befestigt ist.
5. Oszillatorschaltung nach einem der Ansprüche 1 bis 4, d a d u r c h g e k e n n z e i c h n e t, daß zur Kopplung von Oszillatorkern (OC) und Entdampfungsverstarker (EV) eine Resonanztransformationsschaltung (TR) vorgesehen ist, welche ein Paar von an den ersten Schaltungsknoten (Kl, KIX) angeschlossenen Koppelkapazitäten (CK, CKX) umfaßt, die in einem zweiten Schaltungsknoten (K2, K2X) an je eine weitere Induktivität (L2, L2X) angeschlossen sind.
6. Oszillatorschaltung nach Anspruch 5, d a d u r c h g e k e n n z e i c h n e t, daß der Entdampfungsverstarker zumindest einen NMOS- Transistor (TI) aufweist.
7. Oszillatorschaltung nach einem der Ansprüche 1 bis 6, d a d u r c h g e k e n n z e i c h n e t, daß erste und zweite Kapazität (Dl, DIX) als Varaktordioden mit spannungsabhängigem Kapazitätswert ausgeführt sind.
8. Oszillatorschaltung nach Anspruch 7, d a d u r c h g e k e n n z e i c h n e t, daß die Varaktordioden (Dl, DIX) anodenseitig miteinander verbunden sind und daß anodenseitig eine SteuerSpannung (US) zum Einstellen der Kapazitätswerte der Varaktordioden (Dl, DIX) zuführbar ist.
9. Oszillatorschaltung nach einem der Ansprüche 1 bis 8, d a d u r c h g e k e n n z e i c h n e t, daß der Oszillatorkern (OC) und die Resonanztransformations- schaltung (TR) symmetrisch ausgebildet sind zur Führung von Differenzsignalen, und daß der Entdampfungsverstarker (EV) ein Differenzverstärker mit zwei kreuzgekoppelten Transistoren (TI, T1X) ist.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10056943 | 2000-11-17 | ||
| DE10056943A DE10056943C1 (de) | 2000-11-17 | 2000-11-17 | Oszillatorschaltung |
| PCT/DE2001/004249 WO2002041487A1 (de) | 2000-11-17 | 2001-11-13 | Oszillatorschaltung |
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| Publication Number | Publication Date |
|---|---|
| EP1336245A1 true EP1336245A1 (de) | 2003-08-20 |
| EP1336245B1 EP1336245B1 (de) | 2004-09-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| EP01996922A Expired - Lifetime EP1336245B1 (de) | 2000-11-17 | 2001-11-13 | Oszillatorschaltung |
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| Country | Link |
|---|---|
| US (1) | US6806785B2 (de) |
| EP (1) | EP1336245B1 (de) |
| DE (2) | DE10056943C1 (de) |
| WO (1) | WO2002041487A1 (de) |
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| DE10246844B3 (de) * | 2002-10-08 | 2004-09-02 | Texas Instruments Deutschland Gmbh | Oszillatorschaltung |
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| TWI245485B (en) * | 2003-06-20 | 2005-12-11 | Delta Electronics Inc | Oscillating circuit and manufacturing method thereof |
| DE10336720B4 (de) * | 2003-08-11 | 2007-07-12 | Gronefeld, Andreas, Dr.-Ing. | Optimale Resonatorkopplung an Mikrowellentransistoren bei Breitbandoszillatoren |
| TWI361479B (en) * | 2003-08-28 | 2012-04-01 | Gct Semiconductor Inc | Integrated circuit package having inductance loop formed from a bridge interconnect |
| TWI373925B (en) | 2004-02-10 | 2012-10-01 | Tridev Res L L C | Tunable resonant circuit, tunable voltage controlled oscillator circuit, tunable low noise amplifier circuit and method of tuning a resonant circuit |
| US7508898B2 (en) | 2004-02-10 | 2009-03-24 | Bitwave Semiconductor, Inc. | Programmable radio transceiver |
| US7102454B2 (en) * | 2004-08-04 | 2006-09-05 | Via Technologies, Inc. | Highly-linear signal-modulated voltage controlled oscillator |
| US7397329B2 (en) * | 2004-11-02 | 2008-07-08 | Du Toit Nicolaas D | Compact tunable filter and method of operation and manufacture therefore |
| DE102005042706B4 (de) * | 2005-09-01 | 2008-08-14 | Atmel Germany Gmbh | Halbleiter-Chip zur Erzeugung einer steuerbaren Frequenz |
| US7672645B2 (en) | 2006-06-15 | 2010-03-02 | Bitwave Semiconductor, Inc. | Programmable transmitter architecture for non-constant and constant envelope modulation |
| KR100843225B1 (ko) * | 2007-01-08 | 2008-07-02 | 삼성전자주식회사 | 위상 잡음을 제어하는 전압 제어 발진기 및 그 이용 방법 |
| JP4999922B2 (ja) * | 2007-03-30 | 2012-08-15 | 三菱電機株式会社 | 半導体チップおよび高周波回路 |
| KR20080112813A (ko) * | 2007-06-22 | 2008-12-26 | 주식회사 동부하이텍 | 능동 인덕터를 이용한 전압제어 발진기 |
| JP4852088B2 (ja) * | 2008-11-04 | 2012-01-11 | 株式会社東芝 | バイアス回路 |
| US9106179B2 (en) * | 2011-03-18 | 2015-08-11 | Freescale Semiconductor Inc. | Voltage-controlled oscillators and related systems |
| US9099957B2 (en) | 2011-03-18 | 2015-08-04 | Freescale Semiconductor Inc. | Voltage-controlled oscillators and related systems |
| US8629732B2 (en) | 2011-09-30 | 2014-01-14 | Freescale Semiconductor, Inc. | Voltage-controlled oscillators and related systems |
| US10122326B2 (en) * | 2016-11-04 | 2018-11-06 | Qualcomm Incorporated | Systems and methods providing loadline modulation of a power amplifier |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2220113B (en) * | 1988-06-22 | 1992-02-12 | Philips Electronic Associated | Microwave oscillator devices |
| DE4341221A1 (de) * | 1993-12-03 | 1995-06-08 | Thomson Brandt Gmbh | Anordnung zur Verringerung von Störungen bei Schwingkreisen in integrierten Schaltungen |
| US6046647A (en) * | 1998-12-08 | 2000-04-04 | Lucent Technologies Inc. | Voltage-controlled oscillator |
-
2000
- 2000-11-17 DE DE10056943A patent/DE10056943C1/de not_active Expired - Fee Related
-
2001
- 2001-11-13 EP EP01996922A patent/EP1336245B1/de not_active Expired - Lifetime
- 2001-11-13 WO PCT/DE2001/004249 patent/WO2002041487A1/de not_active Ceased
- 2001-11-13 DE DE50103674T patent/DE50103674D1/de not_active Expired - Lifetime
-
2003
- 2003-05-19 US US10/440,781 patent/US6806785B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| See references of WO0241487A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10056943C1 (de) | 2002-04-11 |
| US6806785B2 (en) | 2004-10-19 |
| US20030189468A1 (en) | 2003-10-09 |
| DE50103674D1 (de) | 2004-10-21 |
| WO2002041487A1 (de) | 2002-05-23 |
| EP1336245B1 (de) | 2004-09-15 |
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