EP1332516A1 - Method for applying a substrate - Google Patents

Method for applying a substrate

Info

Publication number
EP1332516A1
EP1332516A1 EP01988946A EP01988946A EP1332516A1 EP 1332516 A1 EP1332516 A1 EP 1332516A1 EP 01988946 A EP01988946 A EP 01988946A EP 01988946 A EP01988946 A EP 01988946A EP 1332516 A1 EP1332516 A1 EP 1332516A1
Authority
EP
European Patent Office
Prior art keywords
substrate
protective layer
wafer
pressure
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01988946A
Other languages
German (de)
French (fr)
Inventor
Pirmin Gerhard Muffler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suess Microtec Lithography GmbH
Original Assignee
SUESS MICROTEC LABORATORY EQUIPMENT GmbH
Suess Microtec Laboratory Equipment GmbH
SUSS MicroTec Laboratory Equipment GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUESS MICROTEC LABORATORY EQUIPMENT GmbH, Suess Microtec Laboratory Equipment GmbH, SUSS MicroTec Laboratory Equipment GmbH filed Critical SUESS MICROTEC LABORATORY EQUIPMENT GmbH
Publication of EP1332516A1 publication Critical patent/EP1332516A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/0007—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/18—Handling of layers or the laminate
    • B32B38/1866—Handling of layers or the laminate conforming the layers or laminate to a convex or concave profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

  • the invention relates to a method for applying a substrate according to the preamble of claim 1 and an apparatus for performing this method.
  • a semiconductor wafer is subjected to different, successive processes.
  • An important step after applying different structures and layers on the front (active side or side on which the applied layers are located) is the application of a protective layer on this active side.
  • This protective layer has the task of the top and the wafer to protect their sensitive surface during the subsequent processing process, for example thinning the wafer by grinding or lapping. The thinning process takes place on the back of the wafer and has a decisive influence on the remaining thickness of the wafer.
  • a wafer surface that is as flat as possible is very important.
  • One parameter for this surface quality is the quality of the wafer base, which is formed from the mounting support itself and the applied protective layer. Unevenness of these two elements affect the back of the wafer to be processed. Methods to improve this situation are known.
  • EP-A2-0 924 759 describes a special mixture of substances for assembling and disassembling a semiconductor wafer.
  • DE-A 1 -43 32 488 a film is drawn as flat as possible by means of the adhesive force.
  • Reversible adhesive layers are also common. It has been shown that despite the complex preparation of the wafer base there is a disadvantage inherent in the system.
  • the inclusion of a protective layer between the active wafer side and the mounting carrier creates air pockets which cause unevenness on the back of the wafer. These air pockets can hardly be removed by increasing the contact pressure or by distributing the local pressure locations. Even repeated repetitions of the pressing process do not lead to the desired success. Such manipulations also increase the risk of the wafer breaking in an uncontrolled manner.
  • Adhesive tape to be removed.
  • the object of the invention is to remedy this and to connect the wafer to the protective layer without any undue procedural effort without any air bubbles whatsoever.
  • the protective layer is initially arranged at a distance from the protective layer and is convexly curved by means of a printing medium
  • Wafer edge remains held.
  • the wafer is then brought into contact with the protective layer and / or adhesive layer in a linear movement.
  • the wafer is placed over the entire surface of the protective layer from the first contact point to its edge. This ensures that a homogeneous displacement movement between the layers takes place from a central point by transferring the dome-shaped wafer shape into a flat surface. Due to the pressure medium, the wafer can react flexibly to irregularities in the upper protective layer surface. With this procedure, air bubbles hardly arise or are pushed outwards in the radial direction and safely eliminated.
  • the substrate is exposed to an almost constant pressure when it is placed on the protective layer. This ensures a largely constant, uniform and only slight penetration depth of the substrate into the protective layer. This is achieved by continuously monitoring the distance between the two bodies as the preformed substrate approaches the protective layer.
  • the substrate curvature and the laying of the substrate on the protective layer are carried out from a carrier body by controlling the medium pressure in the cavity between the substrate and the carrier body.
  • speed and the spatial shape of the substrate are changed accordingly so that the outer surface of the dome-shaped substrate spreads two-dimensionally on the protective layer without any noteworthy local differences
  • the degree of the curvature can be freely controlled in terms of time and space in order to ensure a uniform depositing of the substrate on the protective layer.
  • the medium pressure is controlled in such a way that first a maximum pressure is maintained until the substrate comes into contact with the protective layer and then the maximum pressure is gradually reduced until the substrate edge is in place.
  • the substrate edge is held with negative pressure.
  • the invention also relates to a device with a support body which is movable with respect to the mounting support, the side of which facing the protective layer is planar, supports the substrate and is provided with flow openings for the medium, which are designed as centrally formed pressure channels and peripheral suction grooves close to the periphery.
  • the pressure channels with their supply air lines serve to bend the wafer by means of overpressure
  • the suction grooves are provided with suction lines in order to hold the substrate at its edges by means of vacuum and also to set it down.
  • a further embodiment of the invention provides that the side of the support body facing the protective layer is preferably circular, oval or n-shaped.
  • the said side is preferably circular in plan view; however, other shapes are also possible, such as oval or polygonal.
  • the method makes it possible to provide the active side of the substrate with a protective layer, thereby completely eliminating the inclusion of air bubbles. As a result, the back of the substrate is not affected by unevenness in the following work step. By using the method it is possible to optimize the thinning of the substrate thickness. Furthermore, the favorable initial position of the surface can reduce possible damage (micro cracks, etc.).
  • FIGS. 1-4 show the time sequence of the method according to the invention for applying the active side of a wafer 4 into a protective layer 5.
  • FIG. 1 shows the initial phase of the process that takes place according to the method.
  • Feed arm 1 guides a support body 2 in a linear movement to an assembly support 6, on which a prepared protective layer 5 is applied.
  • the supporting body 2 has at least one preferably central, open channel 7 on its lower side, which is supplied with excess pressure by a medium (see arrows).
  • Circular groove-shaped flow openings 3 are provided on the periphery of the underside of the support body 2, through which the medium is sucked off. In the initial phase, this negative pressure serves to hold and fix the wafer 4 at the edges of its rear side. As soon as a sufficient holding force is achieved through the suction effect, an overpressure is applied concentrically via the channel 7.
  • This overpressure is dimensioned such that the wafer bulges outwards, but does not exceed the holding force due to the suction effect at the edge of the wafer 4.
  • the spatial shape of the wafer 4 is thus changed, but is still fixed in the center.
  • the wafer 4 is gradually moved toward the mounting support 6 with the protective layer 5.
  • FIG. 2 shows that the wafer has reached the destination, the protective layer 5. This phase is detected by appropriate sensors and the feed speed is reduced so that the protruding part of the curved
  • FIG. 3 shows that the correlation between the reshaping of the bulged wafer and the remaining feed path has now taken place.
  • Channel 7 is withdrawn, the wafer reverts to its original shape, and at the same time an almost constant contact pressure between the active wafer side and the protective layer 5 is ensured by further lowering the feed arm 1.
  • the surface of the wafer unrolls evenly from the central point of contact to the edge and systematically pushes possible air bubbles in front of it towards the edge.
  • the wafer 4 shows the final phase of the application of the wafer 4 into the protective layer 5.
  • the wafer 4 has completely reverted into its elongated shape and now rests in the protective layer parallel to the mounting carrier 6.
  • the negative pressure in the flow openings 3 for holding the wafer 4 is lifted, and the wafer 4 detaches from the support body 2, which then moves back.
  • the wafer 4 could also be attached to the mounting bracket 6 electrostatically.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Quality & Reliability (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a method for applying a thin-wall, flat substrate, especially wafers, to an assembly support having a preferably even protective layer, e.g. made of wax. The substrate is arranged at a distance from the protective layer and is convex. The substrate is then brought into contact with the protective layer before finally being applied, starting from the point of contact and up to the edge thereof, to the protective layer in an all-over manner. The curving of the substrate is effected by means of a pressure medium, especially air or liquid, which acts upon the side of the substrate facing away from the protective layer, while the edge of the substrate continues to be held.

Description

Verfahren zum Aufbringen eines SubstratsMethod of applying a substrate
Die Erfindung betrifft ein Verfahren zum Aufbringen eines Substrats nach dem Oberbegriff des Anspruchs 1 sowie eine Vorrichtung zur Durchführung dieses Verfahrens.The invention relates to a method for applying a substrate according to the preamble of claim 1 and an apparatus for performing this method.
Bei der kommerzielen Herstellung von Halbleiterwafern (Scheiben aus Silizium, GaAs usw.) wird ein Halbleiterwafer unterschiedlichen, aufeinander folgenden Verfahren unterworfen. Ein wichtiger Schritt nach dem Aufbringen verschiedener Strukturen und Schichten auf der Vorderseite (aktive Seite bzw. Seite, auf der sich die aufgebrachten Schichten befinden) ist das Anbringen einer Schutzschicht auf dieser aktiven Seite. Diese Schutzschicht hat die Aufgabe, die Waferoberseite und damit deren empfindliche Oberfläche während des nachfolgenden Bearbeitungsprozesses, beispielsweise dem Dünnen des Wafers durch Grinden oder Läppen, zu schützen. Der Vorgang des Dünnens findet auf der Rückseite des Wafers statt und beeinflusst entscheidend die Restdicke des Wafers.In the commercial manufacture of semiconductor wafers (wafers made of silicon, GaAs, etc.), a semiconductor wafer is subjected to different, successive processes. An important step after applying different structures and layers on the front (active side or side on which the applied layers are located) is the application of a protective layer on this active side. This protective layer has the task of the top and the wafer to protect their sensitive surface during the subsequent processing process, for example thinning the wafer by grinding or lapping. The thinning process takes place on the back of the wafer and has a decisive influence on the remaining thickness of the wafer.
Da das Abtragen beim Waferdünnen bis auf eine Dicke von ca. 50 m oder weniger geschieht, ist eine möglichst plane Waferfläche sehr wichtig. Ein Parameter für diese Oberflächengüte ist die Qualität der Waferunterlage, die aus dem Montageträger selbst und der aufgetragenen Schutzschicht gebildet wird. Unebenheiten dieser beiden Elemente beeinträchtigen die zu bearbeitende Rückseite des Wafers. Verfahren zur Verbesserung dieser Situation sind bekannt.Since the removal takes place during wafer thinning down to a thickness of approx. 50 m or less, a wafer surface that is as flat as possible is very important. One parameter for this surface quality is the quality of the wafer base, which is formed from the mounting support itself and the applied protective layer. Unevenness of these two elements affect the back of the wafer to be processed. Methods to improve this situation are known.
In der EP-A2-0 924 759 ist eine spezielle Stoffmischung zur Montage und Demontage einer Halbleiterscheibe beschrieben. In der DE-A 1 -43 32 488 wird eine Folie mittels Adhäsionskraft möglichst plan aufgezogen. Weiterhin üblich sind reversible Klebstoffschichten. Es hat sich gezeigt, dass trotz aufwendiger Vorbereitung der Waferunterlage ein systemimmanenter Nachteil besteht. Durch das Einbringen einer Schutzschicht zwischen der aktiven Waferseite und dem Montageträger entstehen Lufteinschlüsse, welche Unebenheiten auf der Waferrückseite verursachen. Diese Lufteinschlüsse sind mit einer Erhöhung des Anpressdrucks oder einer Verteilung der lokalen Druckorte kaum zu beseitigen. Auch mehrfache Wiederholungen des Anpressvorgangs führen nicht zum gewünschten Erfolg. Außer- dem wird durch solche Manipulationen die Bruchgefahr des Wafers unkontrolliert erhöht.EP-A2-0 924 759 describes a special mixture of substances for assembling and disassembling a semiconductor wafer. In DE-A 1 -43 32 488, a film is drawn as flat as possible by means of the adhesive force. Reversible adhesive layers are also common. It has been shown that despite the complex preparation of the wafer base there is a disadvantage inherent in the system. The inclusion of a protective layer between the active wafer side and the mounting carrier creates air pockets which cause unevenness on the back of the wafer. These air pockets can hardly be removed by increasing the contact pressure or by distributing the local pressure locations. Even repeated repetitions of the pressing process do not lead to the desired success. Such manipulations also increase the risk of the wafer breaking in an uncontrolled manner.
Aus der DE-A1 -26 08 427 ist ein Verfahren gemäß dem Oberbegriff des Anspruchs 1 bekannt, bei dem der Wafer mittels einer Saugpinzette gehalten und aufgebracht wird, deren Saugfläche kalottenförmig ausgebildet ist und mit mehre ren Ringnuten versehen ist. In den Ringnuten sind mehrere Ansaugöffnungen vorhanden, die mit einer Unterdruckquelle verbunden ist. Nach dem Aufbringen des Wafers auf den mit Kitt versehenen Träger wird der Wafer mit dem Stempel einer gesonderten Presse angepresst. Bei diesem Verfahren können Lufteinschlüsse zwischen Wafer und einem Montageträger nicht völlig vermieden werden. Ein weiterer Nachteil besteht darin, dass der Trägerkörper für den Wafer zum Anpressen des Wafers auf die Schutzschicht gewechselt werden muss.From DE-A1 -26 08 427 a method according to the preamble of claim 1 is known, in which the wafer is held and applied by means of suction tweezers, the suction surface of which is dome-shaped and with several ren ring grooves is provided. There are several suction openings in the ring grooves, which are connected to a vacuum source. After the wafer has been applied to the carrier provided with cement, the wafer is pressed with the stamp of a separate press. With this method, air pockets between the wafer and a mounting carrier cannot be completely avoided. Another disadvantage is that the carrier body for the wafer has to be changed to press the wafer onto the protective layer.
Ferner ist durch die US-A-6 007 654 bekannt, ein mit seinem Rand an einem Montageträger festgelegtes Klebeband mit Abstand über einem auf dem Montageträger festgelegten Wafer 14 anzuordnenen und dann einen Luftstrahl zentral auf die Rückseite des Klebebands zu richten, so dass das Klebeband durchgebogen und auf den Wafer aufgelegt wird. Dabei sollen Luftblasen zwischen Wafer undFurthermore, it is known from US-A-6 007 654 to arrange an adhesive tape fixed with its edge to a mounting carrier at a distance above a wafer 14 fixed on the mounting carrier and then to direct an air jet centrally onto the rear side of the adhesive tape so that the adhesive tape bent and placed on the wafer. Air bubbles between the wafer and
Klebeband entfernt werden.Adhesive tape to be removed.
Weiterhin ist durch die US-A-5 964 978 bekannt, ein Substrat auf einen Montageträger mittels eines kalottenförmigen Luftsacks aufzubringen, wobei der Montageträger in Richtung auf das Substrat gepresst wird, das sich dabei durchbiegt. Luftblasen sollen dadurch vermieden werden.Furthermore, it is known from US Pat. No. 5,964,978 to apply a substrate to a mounting bracket by means of a dome-shaped airbag, the mounting bracket being pressed in the direction of the substrate which bends in the process. This is to avoid air bubbles.
Ausgehend vom beschriebenen Stand der Technik liegt der Erfindung die Aufgabe zugrunde, hier Abhilfe zu schaffen und den Wafer ohne unangemessenen Verfah- rensaufwand problemlos mit der Schutzschicht unter völligem Ausschluss von Luftbläschen zu verbinden.On the basis of the prior art described, the object of the invention is to remedy this and to connect the wafer to the protective layer without any undue procedural effort without any air bubbles whatsoever.
Die gestellte Aufgabe wird durch die Merkmale des Anspruchs 1 sowie mittels einer Vorrichtung nach Anspruch 6 gelöst. Man erkennt, dass die Erfindung jedenfalls dann verwirklicht ist, wenn der Wafer (allgemein ein Substrat) in Bezug auf die Schutzschicht zunächst mit Abstand angeordnet und mittels eines Druckmediums konvex gewölbt wird, wobei derThe stated object is achieved by the features of claim 1 and by means of a device according to claim 6. It can be seen that the invention is achieved in any case when the wafer (generally a substrate) is initially arranged at a distance from the protective layer and is convexly curved by means of a printing medium, the
Waferrand gehalten bleibt. Danach wird der Wafer in einer Linearbewegung mit der Schutzschicht und/oder Klebeschicht in Kontakt gebracht. Schließlich wird der Wafer von der ersten Kontaktstelle aus zu seinem Rand hin auf die Schutzschicht ganzflächig aufgelegt. Dadurch ist gewährleistet, dass von einem zentralen Punkt aus durch Überführen der kalottenförmigen Waferform in eine ebene Fläche eine homogene Verdrängungsbewegung zwischen den Schichten stattfindet. Dabei kann der Wafer aufgrund des Druckmediums flexibel auf Ungleichmäßigkeiten der oberen Schutzschichtfläche reagieren. Luftblasen entstehen bei dieser Vorgehensweise kaum oder werden in radialer Richtung nach außen gedrückt und sicher eliminiert.Wafer edge remains held. The wafer is then brought into contact with the protective layer and / or adhesive layer in a linear movement. Finally, the wafer is placed over the entire surface of the protective layer from the first contact point to its edge. This ensures that a homogeneous displacement movement between the layers takes place from a central point by transferring the dome-shaped wafer shape into a flat surface. Due to the pressure medium, the wafer can react flexibly to irregularities in the upper protective layer surface. With this procedure, air bubbles hardly arise or are pushed outwards in the radial direction and safely eliminated.
Weitere zweckmäßige und vorteilhafte Ausgestaltungen der Erfindung gehen aus den Unteransprüchen hervor.Further expedient and advantageous refinements of the invention emerge from the subclaims.
Nach einer weiteren Ausgestaltung der Erfindung wird das Substrat beim Auflegen auf die Schutzschicht einem nahezu konstanten Druck ausgesetzt. Dadurch wird eine weitgehend konstante, gleichmäßige und nur geringe Eindringtiefe des Substrats in die Schutzschicht gewährleistet. Dies wird erreicht, indem während der Annäherungsbewegung des vorgeformten Substrats an die Schutzschicht der Abstand zwischen den beiden Körpern ständig überwacht wird.According to a further embodiment of the invention, the substrate is exposed to an almost constant pressure when it is placed on the protective layer. This ensures a largely constant, uniform and only slight penetration depth of the substrate into the protective layer. This is achieved by continuously monitoring the distance between the two bodies as the preformed substrate approaches the protective layer.
Gemäß einer weiteren Ausbildung des Verfahrens erfolgt die Substratwölbung sowie das Auflegen des Substrats auf die Schutzschicht von einem Tragkörper her durch Steuern des Mediumdrucks im Hohlraum zwischen dem Substrat und dem Tragkörper. Sobald die mittige Kalottenkontaktstelle die Schutzschicht erreicht, werden Geschwindigkeit und die räumliche Substratform entsprechend so verändert, dass die Mantelfläche des kalottenförmigen Substrats sich zweidimensional auf der Schutzschicht ausbreitet, ohne nennenswerte örtlich unterschiedlicheAccording to a further embodiment of the method, the substrate curvature and the laying of the substrate on the protective layer are carried out from a carrier body by controlling the medium pressure in the cavity between the substrate and the carrier body. As soon as the central spherical contact point reaches the protective layer, speed and the spatial shape of the substrate are changed accordingly so that the outer surface of the dome-shaped substrate spreads two-dimensionally on the protective layer without any noteworthy local differences
Eindringtiefen zu verursachen. Das Maß der Wölbung kann zeitlich und räumlich frei gesteuert werden, um ein gleichmäßiges Absetzen des Substrats auf der Schutzschicht zu gewährleisten.To cause penetration depths. The degree of the curvature can be freely controlled in terms of time and space in order to ensure a uniform depositing of the substrate on the protective layer.
Gemäß einer vorteilhaften, weiteren Ausbildung der Erfindung erfolgt die Steuerung des Mediumdrucks derart, dass zunächst ein Maximaldruck bis zum Kontakt des Substrats mit der Schutzschicht aufrecht erhalten und dann der Maximaldruck allmählich abgebaut wird, bis der Substratrand aufgesetzt ist.According to an advantageous, further embodiment of the invention, the medium pressure is controlled in such a way that first a maximum pressure is maintained until the substrate comes into contact with the protective layer and then the maximum pressure is gradually reduced until the substrate edge is in place.
Gemäß einer vorteilhaften, weiteren Ausbildung des Verfahrens erfolgt das Halten des Substratrands mit Unterdruck.According to an advantageous, further development of the method, the substrate edge is held with negative pressure.
Die Erfindung betrifft auch eine Vorrichtung mit einem in Bezug auf den Montageträger beweglichen Tragkörper, dessen der Schutzschicht zugewandte Seite plan ausgebildet ist, das Substrat trägt und mit Strömungsöffnungen für das Medium versehen ist, die als mittig ausgebildete Druckkanäle und peripherienahe, umlaufende Saugnuten ausgebildet sind. Hierbei dienen die Druckkanäle mit ihren Zuluftleitungen zum Wölben des Wafers mittels Überdruck, und die Saugnuten sind mit Absaugleitungen versehen, um das Substrat mittels Unterdruck an seinen Rändern zu halten und auch abzusetzen.The invention also relates to a device with a support body which is movable with respect to the mounting support, the side of which facing the protective layer is planar, supports the substrate and is provided with flow openings for the medium, which are designed as centrally formed pressure channels and peripheral suction grooves close to the periphery. Here, the pressure channels with their supply air lines serve to bend the wafer by means of overpressure, and the suction grooves are provided with suction lines in order to hold the substrate at its edges by means of vacuum and also to set it down.
Eine weitere Ausbildung der Erfindung sieht vor, dass die der Schutzschicht zugewandte Seite des Tragkörpers vorzugsweise kreisrund, oval oder n-eckförmig ist. Die genannte Seite ist in der Draufsicht vorzugsweise kreisrund geformt; jedoch sind auch andere Formen möglich, wie beispielsweise oval oder n-eckig. Das Verfahren ermöglicht es, die aktive Seite des Substratsmit einer Schutzschicht zu versehen und dabei den Einschluss von Luftbläschen völlig zu eliminieren. Dadurch wird in dem folgenden Arbeitsschritt die Rückseite des Substrats nicht durch Unebenheiten beeinträchtigt. Durch die Anwendung des Verfahrens ist es möglich, die Verdünnung der Substratdicke zu optimieren. Weiterhin lassen sich durch die günstige Ausgangslage der Oberfläche mögliche Beschädigungen (Mikro- risse usw.) verringern.A further embodiment of the invention provides that the side of the support body facing the protective layer is preferably circular, oval or n-shaped. The said side is preferably circular in plan view; however, other shapes are also possible, such as oval or polygonal. The method makes it possible to provide the active side of the substrate with a protective layer, thereby completely eliminating the inclusion of air bubbles. As a result, the back of the substrate is not affected by unevenness in the following work step. By using the method it is possible to optimize the thinning of the substrate thickness. Furthermore, the favorable initial position of the surface can reduce possible damage (micro cracks, etc.).
Die Erfindung wird nun anhand eines Ausführungsbeispiels näher erläutert.The invention will now be explained in more detail using an exemplary embodiment.
Die Figuren 1 -4 zeigen den zeitlichen Ablauf Verfahrens gemäß der Erfindung zum Aufbringen der aktiven Seite eines Wafers 4 in eine Schutzschicht 5. In Fig. 1 ist die Ausgangsphase des nach dem Verfahren ablaufenden Vorgangs dargestellt. EinFIGS. 1-4 show the time sequence of the method according to the invention for applying the active side of a wafer 4 into a protective layer 5. FIG. 1 shows the initial phase of the process that takes place according to the method. On
Zuführungsarm 1 führt einen Tragkörper 2 in einer Linearbewegung zu einem Montageträger 6, auf dem eine vorbereitete Schutzschicht 5 aufgetragen ist. Der Tragkörper 2 besitzt an seiner unteren Seite mindestens einen vorzugsweise mittigen, offenen Kanal 7, der durch ein Medium (s. Pfeile) mit Überdruck versorgt wird. An der Peripherie der Unterseite des Tragkörpers 2 sind kreisförmig nutförmi- ge Strömungsöffnungen 3 vorgesehen, durch die das Medium abgesaugt wird. Dieser Unterdruck dient in der Anfangsphase zum Halten und Fixieren des Wafers 4 an den Rändern seiner Rückseite. Sobald eine ausreichende Haltekraft durch die Saugwirkung erreicht ist, wird ein Überdruck über den Kanal 7 konzentrisch aufgeschaltet. Dieser Überdruck ist so bemessen, dass der Wafer sich nach außen wölbt, jedoch die Haltekraft durch die Saugwirkung am Rand des Wafers 4 nicht überschreitet. Der Wafer 4 ist damit in seiner räumlichen Form verändert, jedoch immer noch mittig fixiert. In diesem statischen Zustand wird der Wafer 4 auf den Montageträger 6 mit der Schutzschicht 5 allmählich zubewegt. Die Fig. 2 zeigt, dass der Wafer den Zielort, die Schutzschicht 5, erreicht hat. Diese Phase wird durch eine entsprechende Sensorik erfasst, und die Zuführ- geschwindigkeit wird so verringert, dass der vorstehende Teil des gewölbtenFeed arm 1 guides a support body 2 in a linear movement to an assembly support 6, on which a prepared protective layer 5 is applied. The supporting body 2 has at least one preferably central, open channel 7 on its lower side, which is supplied with excess pressure by a medium (see arrows). Circular groove-shaped flow openings 3 are provided on the periphery of the underside of the support body 2, through which the medium is sucked off. In the initial phase, this negative pressure serves to hold and fix the wafer 4 at the edges of its rear side. As soon as a sufficient holding force is achieved through the suction effect, an overpressure is applied concentrically via the channel 7. This overpressure is dimensioned such that the wafer bulges outwards, but does not exceed the holding force due to the suction effect at the edge of the wafer 4. The spatial shape of the wafer 4 is thus changed, but is still fixed in the center. In this static state, the wafer 4 is gradually moved toward the mounting support 6 with the protective layer 5. FIG. 2 shows that the wafer has reached the destination, the protective layer 5. This phase is detected by appropriate sensors and the feed speed is reduced so that the protruding part of the curved
Wafers die Schutzschicht zwar berührt, jedoch keine bedeutenden Verformungen durch Eintauchen entstehen.Wafers touch the protective layer, but no significant deformations result from immersion.
Die Fig. 3 zeigt, dass jetzt die Korrelation zwischen Rückformung des aufgewölb- ten Wafers und des restlichen Zuführweges stattgefunden hat. Der Überdruck desFIG. 3 shows that the correlation between the reshaping of the bulged wafer and the remaining feed path has now taken place. The overpressure of the
Kanals 7 wird zurückgenommen, der Wafer bildet sich in seine ursprüngliche Form zurück, und gleichzeitig wird durch weiteres Absenken des Zuführungsarms 1 für einen nahezu gleichbleibenden Anpressdruck zwischen der aktiven Waferseite und der Schutzschicht 5 gesorgt. Während der Rückbildungsphase des Wafers entrollt sich die Fläche des Wafers gleichmäßig vom mittigen Aufsetzpunkt zum Rand hin und schiebt bei dieser Ausbreitung systematisch mögliche Luftbläschen vor sich her zum Rand hin.Channel 7 is withdrawn, the wafer reverts to its original shape, and at the same time an almost constant contact pressure between the active wafer side and the protective layer 5 is ensured by further lowering the feed arm 1. During the regression phase of the wafer, the surface of the wafer unrolls evenly from the central point of contact to the edge and systematically pushes possible air bubbles in front of it towards the edge.
Die Fig. 4 zeigt die Endphase des Aufbringems des Wafers 4 in die Schutzschicht 5. Der Wafer 4 hat sich völlig in seine gestreckte Form zurückgebildet und ruht jetzt in der Schutzschicht parallel zum Montageträger 6. Der Unterdruck in den Strömungsöffnungen 3 zum Halten des Wafers 4 wird aufgehoben, und der Wafer 4 löst sich vom Tragkörper 2, der sodann zurück fährt. Das Befestigen des Wafers 4 am Montageträger 6 könnte auch elektrostatisch erfolgen. 4 shows the final phase of the application of the wafer 4 into the protective layer 5. The wafer 4 has completely reverted into its elongated shape and now rests in the protective layer parallel to the mounting carrier 6. The negative pressure in the flow openings 3 for holding the wafer 4 is lifted, and the wafer 4 detaches from the support body 2, which then moves back. The wafer 4 could also be attached to the mounting bracket 6 electrostatically.

Claims

Ansprüche Expectations
1 . Verfahren zum Aufbringen eines dünnwandigen, flächigen Substrats (4), insbesondere Wafers, auf einen Montageträger (6) mit vorzugsweise ebener Schutzschicht (5), z,B. Wachs, wobei das Substrat (4) in Bezug auf die Schutzschicht (5) mit Abstand angeordnet und konvex gewölbt, dann mit der Schutzschicht (5) in Kontakt gebracht und schließlich von der Kontaktstelle aus zu seinem Rand hin auf die Schutzschicht (5) ganzflächig aufgelegt wird, dadurch gekennzeichnet, dass die Wölbung des Substrats (4) mittels eines Druckmediums, insbesondere Luft oder Flüssigkeit, erfolgt, das auf die der Schutzschicht (5) abgewandte Seite des Substrats (4) einwirkt, während der Substratrand gehalten bleibt.1 . Method for applying a thin-walled, flat substrate (4), in particular a wafer, to a mounting support (6) with a preferably flat protective layer (5), e.g. Wax, the substrate (4) being arranged at a distance from the protective layer (5) and convexly curved, then brought into contact with the protective layer (5) and finally over the entire surface from the contact point to its edge towards the protective layer (5) is applied, characterized in that the curvature of the substrate (4) takes place by means of a pressure medium, in particular air or liquid, which acts on the side of the substrate (4) facing away from the protective layer (5) while the substrate edge remains held.
2. Verfahren nach Anspruch 1 , dadurch gekennzeichnet, dass das Substrat (4) beim Auflegen einen annähernd konstanten Druck auf die Schutzschicht (5) ausübt.2. The method according to claim 1, characterized in that the substrate (4) exerts an approximately constant pressure on the protective layer (5) when placed.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Substratwölbung sowie das Auflegen des Substrats (4) auf die Schutzschicht (5) von einem Tragkörper (2) her durch Steuern des Mediumdrucks im Hohlraum zwischen dem Substrat (4) und dem Tragkörper (2) erfolgt. 3. The method according to claim 1 or 2, characterized in that the substrate curvature and the placement of the substrate (4) on the protective layer (5) from a support body (2) ago by controlling the medium pressure in the cavity between the substrate (4) and the Carrying body (2) takes place.
4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, dass die Steuerung des Mediumdrucks derart erfolgt, dass zunächst ein4. The method according to claim 3, characterized in that the control of the medium pressure is carried out in such a way that a first
Maximaldruck bis zum Kontakt des Substrats mit der Schutzschicht (5) aufrecht erhalten und dann der Maximaldruck allmählich abgebaut wird, bis der Substratrand aufgesetzt ist.Maintain maximum pressure until the substrate comes into contact with the protective layer (5) and then the maximum pressure is gradually reduced until the substrate edge is in place.
5. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass das Halten des Substratrands mit Unterdruck erfolgt.5. The method according to any one of claims 1 to 4, characterized in that the substrate edge is held with negative pressure.
6. Vorrichtung zur Durchführung des Verfahrens nach einem der Ansprüche 1 bis 5, gekennzeichnet durch einen in Bezug auf den Montageträger (6) beweglichen Tragkörper (2), dessen der Schutzschicht (5) zugewandte, Seite (8) plan ausgebildet ist, das Substrat (4) trägt und mit Strömungsöffnungen (3, 7) für das Medium versehen ist, die als mittig ausgebildete Druckkanäle (7) und peripherienahe, umlaufende Saugnuten (3) ausgebildet sind.6. Device for performing the method according to one of claims 1 to 5, characterized by a movable in relation to the mounting bracket (6) support body (2), the protective layer (5) facing, side (8) is planar, the substrate (4) carries and is provided with flow openings (3, 7) for the medium, which are designed as centrally formed pressure channels (7) and peripheral suction grooves (3) close to the periphery.
7. Vorrichtung nach Anspruch 6, dass die der Schutzschicht zugewandte Seite (8) des Tragkörpers (2) vor- zugsweise kreisrund, oval oder n-eckförmig ist. 7. The device according to claim 6, that the side (8) of the supporting body (2) facing the protective layer is preferably circular, oval or n-shaped.
EP01988946A 2000-10-20 2001-10-15 Method for applying a substrate Withdrawn EP1332516A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10052293 2000-10-20
DE10052293A DE10052293A1 (en) 2000-10-20 2000-10-20 Method for depositing a thin-walled, flat wafer substrate onto a mounting carrier with a level protective layer like wax brings the substrate into contact with the protective layer through making a gap and arching.
PCT/EP2001/011897 WO2002035591A1 (en) 2000-10-20 2001-10-15 Method for applying a substrate

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DE10052293A1 (en) 2002-04-25
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WO2002035591A1 (en) 2002-05-02
US20020062921A1 (en) 2002-05-30

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