EP1314993A2 - Device for measuring a magnetic field and measuring a current - Google Patents

Device for measuring a magnetic field and measuring a current Download PDF

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Publication number
EP1314993A2
EP1314993A2 EP02023102A EP02023102A EP1314993A2 EP 1314993 A2 EP1314993 A2 EP 1314993A2 EP 02023102 A EP02023102 A EP 02023102A EP 02023102 A EP02023102 A EP 02023102A EP 1314993 A2 EP1314993 A2 EP 1314993A2
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EP
European Patent Office
Prior art keywords
magnetic field
substrate
conductor
current
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP02023102A
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German (de)
French (fr)
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EP1314993A3 (en
Inventor
Henning Hauenstein
Stephan Ernst
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Robert Bosch GmbH
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Robert Bosch GmbH
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Publication of EP1314993A2 publication Critical patent/EP1314993A2/en
Publication of EP1314993A3 publication Critical patent/EP1314993A3/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices

Definitions

  • an electrical current For a non-contact, low-loss and electrically isolated Measurement of an electrical current is particularly suitable the measurement of the magnetic field generated by the current, for what sensor elements, such as Hall sensors, magnetoresistive resistors or magnetotransistors are suitable.
  • sensor elements such as Hall sensors, magnetoresistive resistors or magnetotransistors are suitable.
  • a very accurate current measurement is used across several orders of magnitude and one if possible low susceptibility to failure required, the location of the required, highly sensitive current or magnetic field sensors generally highly electromagnetic is, in particular by stray fields and interference fields from neighboring Conductors or rotating, for example Magnetic fields in the vicinity of a generator.
  • the Discrimination between the magnetic field to be measured and the parasitic stray fields in the area are very difficult, because even at high currents of a few hundred amperes the magnetic fields, that surround the conductor, often only on the order of magnitude of a few millitesla.
  • the field strength of the to be measured Magnetic fields are often only slightly higher than the field strength of the parasitic stray fields.
  • Interference shielded magnetic field sensors known, wherein often the magnetic field by a so-called Magnetic circuit is concentrated - for example in the form of a Flux concentrator - so that the magnetic field for the measurement is reinforced. Additional known measures include a suitable wiring of the sensors - for example in Form of ASICs or as discrete circuits - which realized the highest possible sensitivity of the measurement becomes.
  • the magnetic field to be measured is also generally known not to register directly, but through generation to eliminate an opposing field at the location of the sensor. From knowledge of the required opposing field, which for example can be generated by a coil closes then back to the magnetic field to be measured.
  • the device according to the invention for measuring a magnetic field and the current measuring device according to the invention have the characteristics of the subordinate claims the advantage that both the sensors and the generation of the opposing field integrated on a single substrate are. This results in that with an inventive Compensation method with a single, highly sensitive sensor cover very large measuring ranges leave, since the actual magnetic field measurement from the generated Opposing field results. It is also advantageous that previously known external or circuitry compensation methods to be replaced by an on-chip solution. Farther it is advantageous that the magnetic field sensor according to the invention, the magnetic field generator for the compensation field and the control and evaluation logic in one Chip are integrated. The one carrying the current to be measured Power section - that is, the conductor section through which the current to be measured flows - can also be beneficial be integrated into the chip.
  • a single chip has the advantage of being inexpensive to manufacture and is space-saving. Farther makes an on-chip compensation method the external one Circuitry and additional components unnecessary, the compensation methods according to the prior art are currently necessary. Furthermore, the Assembly effort compared to previous compensation solutions. The installation space for the sensor and the magnetic field generator is reduced also on the only integrated chip, which can only be integrated into the application. Due to the integration it is still possible to use external Shielding interference and stray fields due to the compact design. Furthermore, it is possible for the production all components, i.e. the power section, the sensor, the control and evaluation logic, inexpensive in in a single process.
  • FIG. 1 is a schematic sketch of a first embodiment a device 1 according to the invention.
  • the device 1 according to the invention comprises on one Substrate 10 an area 50 and an evaluation and control circuit 60, which in a further area of the substrate 10 is provided.
  • the substrate 10 is according to the invention in particular as a semiconductor substrate, in particular as Silicon substrate provided.
  • the area 50 of the substrate 10 comprises, in particular, a first partial area 20, a second section 30 and a third Subarea 40.
  • the first subarea 20 is according to the invention in particular as a section of a current-carrying conductor formed, which carries a current in the region 50th flows vertically through the substrate 10. This results in a magnetic field in the substrate plane, which by the im first portion 20 flowing vertically through the substrate Electricity is generated.
  • the second section 30 comprises the magnetic field generator, i.e. an arrangement, the one flowing vertically through the substrate 10 Electricity is generated so that a magnetic field is created, which the current flowing through the first partial region 20 generated magnetic field is opposite.
  • region 50 of substrate 10 comprises an arrangement for sensing a magnetic field, the arrangement the resulting magnetic field for sensing a magnetic field from that in the first section 20 and in the second Partial area 30 flowing current sensed.
  • Figure 1 are no connecting lines between the evaluation circuit 60 and the region 50 of the semiconductor substrate 10. However, these are of course available to a Possibility of control and evaluation to create. Furthermore, there are also connections from the substrate 10 to the external environment of the substrate 10 not shown in Figure 1.
  • FIG. 2 is a schematic sketch of a second embodiment the device 1 according to the invention.
  • the substrate 10, the evaluation logic, is again shown 60, as well as the area 50 of the substrate 10, which the first partial area 20, the second partial area 30 and includes the third section 40.
  • the connecting lines between the evaluation logic 60 and the area 50 are well as not shown externally.
  • the exemplary embodiment is the second shown in FIG Embodiment provided such that the area 50th in particular has a substantially round shape, wherein also the partial areas 20, 30, 40 are essentially round Have shape.
  • the area is 50 and its Subareas 20, 30, 40 essentially by a rectangular or shown in particular square shape.
  • FIG. 3 is a schematic diagram of the functional principle of Device according to the invention shown. It is believed, that in the first section 20, which is not in FIG. 3 is shown, a first vertical current flow prevails, which in Figure 3 by one with the reference numeral 21 provided arrow is shown.
  • the first stream 21 produced in the dashed and also with the reference numeral 10 provided by a an annular one and provided with the reference number 22 First magnetic field shown by arrow.
  • the first magnetic field 22 is also referred to as the magnetic field 22 to be measured.
  • the second sub-area 30 there is in the invention Device before a second current flow, which in the figure 3 represented by an arrow provided with the reference number 31 is.
  • the second partial area 30 is in FIG. 3 also not shown.
  • the second stream 31 produces in the substrate plane 10 a second magnetic field 32, which by an annular one with the reference numeral 32 Arrow is shown, which is opposite the first Magnetic field 22 is oriented in opposite directions.
  • the second magnetic field 32 is in particular also used as a compensation field 32 or Counter field 32 designated.
  • Those arranged in the third partial area 40 Magnetic field sensors essentially register only that from the first magnetic field 22 and the second magnetic field 32 resulting magnetic field, which in FIG. 3 is not specifically represented by a reference number.
  • the principle of the invention is based on the fact that a vertical Current flow, that is to say the first current 21, through a conductor or a semiconductor chip - that is to say in FIGS. 1 and 2 arranged in particular in the first partial area 20 - an annular, magnetic conductor surrounding the conductor or the chip - First magnetic field 22 - generated. It is therefore advantageous a current-carrying conductor or semiconductor in the center of a semiconductor chip or To place area 50. This is also in Figures 1 and 2 shown, since the first partial area 20 is essentially each located in the center of area 50.
  • the one in the first Sub-area 20 conductor is according to the invention in particular as a power transistor, for example as a power MOS, Bipolar transistor, etc.
  • this power section of the chip with magnetic field sensitive elements for example magnetic field-sensing cells - for example on the use of the Hall effect, the magnetoresistive Effect, the magnetotransistor effect, etc. are based -, so you can with this magnetic field sensitive cell structure measure the first magnetic field 22, which is the one in the first partial area 20 radially surrounds the power section. hereby it is possible to measure the first magnetic field 22 directly.
  • the third section 40 Surrounding the first partial area 20 with magnetic field sensitive Elements is shown in Figures 1 and 2 that the third section 40 in particular also the surrounds the first partial area 20.
  • the current flow (second current 31) in the second partial region 30 is to be chosen so that at the location of the sensor cells in the third Sub-area 40 opposite the generated compensation field 32 to the field profile of the central power section in the first partial region 20 originating magnetic field 22 directed is. In this way you get outside, magnetic field sensitive and the chip area accommodated in the third partial area 40 two opposing magnetic fields 22, 32.
  • suitable Variation of the current flow in the second partial region 30, that is, in the middle cell structure, you can see the field of the power section, which is provided in the first section 20 is at the location of the sensor cells, i.e. in the third Compensate section 40 as required.
  • a second current 31 measure those in the third section 40 housed sensor cells the undisturbed field 22 of the Central power section housed in the first section 20.
  • a second means is therefore provided in particular, which is accommodated in the third partial region 40 and comprises magnetic field-sensitive elements which sense a magnetic field running in the plane of the substrate 10, the sensed magnetic field being either the resulting magnetic field from the first magnetic field 22 and the second magnetic field 32 corresponds - if the second magnetic field 32 does not disappear when the magnetic field generator located in the second partial area 30 is switched on - or wherein the resulting magnetic field is equal to the first magnetic field 22 - if the magnetic field generator located in the second partial area 30 is switched off.
  • the first magnetic field 22 can also be periodically modulated by superimposing the varying field 32, as a result of which frequency-sensitive measurement methods (for example using lock-in technology or other noise-suppressing measurement methods) can be used to measure the magnetic field 22 ,
  • the invention Device in a single semiconductor process manufacture.
  • the described on-chip compensation method respectively the device according to the invention can also be used several times be applied or repeated on a chip. ever After application, the current-carrying structure in the first Partial area 20 in a ring around the central compensation current structure arranged in the second partial area 30 become. Compared to FIGS. 1 and 2, this means a Exchange of the first partial area 20 and the second Subarea 30.
  • the magnetic field measuring device according to the invention respectively Current measuring device is advantageous with a control and evaluation logic integrated on the substrate 10 together.
  • all magnetic field sensors based on lateral fields running to the chip area of the substrate 10 are sensitive, especially all elements after the Hall principle work.
  • the complete enclosure of the third section 40 provided sensor cells of the other two sections 20, 30 makes it possible according to the invention, in the third partial area 40 the orbital integral of the first magnetic field 22 and the second magnetic field 32 resulting magnetic field determine what directly results in the resulting current through the closed integration path is accessible. According to the invention it is both provided that the opposing field 32 through the second stream 31 to choose so that the resulting field is adjusted to zero; alternatively, it is also possible regulate the opposing field 32 only at discrete intervals or to be able to adjust, so that general the resulting field does not disappear, but only is (substantially) smaller than the magnetic field 22 to be measured.
  • the magnetic field to be measured would be in two Steps are closed, namely once by the second Magnetic field 32 and the other by measuring the strength of the resulting magnetic field. With a comparison too Zero of the resulting magnetic field just needs to be looked at which counter field 32 is required.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Device (1) for measuring a magnetic field has means for sensing the magnetic field and means for generating an adjustable compensating magnetic field integrated on a monolithic substrate. The compensating magnetic field is adjusted so that the magnetic field sensor has only to measure a small magnetic field. <??>The invention also relates to a corresponding current measurement device that measures the current generated by a magnetic field.

Description

Stand der TechnikState of the art

Für eine berührungslose, verlustarme und potenzialgetrennte Messung eines elektrischen Stromes eignet sich insbesondere die Messung des durch den Strom erzeugten Magnetfeldes, wofür sich Sensorelemente, wie beispielsweise Hallsensoren, magnetoresistive Widerstände oder Magnetotransistoren eignen. In vielen Anwendungen wird eine sehr genaue Strommessung über mehrere Größenordnungen hinweg und eine möglichst geringe Störanfälligkeit gefordert, wobei der Einsatzort der benötigten, hochempfindlichen Strom- beziehungsweise Magnetfeldsensoren im allgemeinen stark elektromagnetisch belastet ist, insbesondere durch Streufelder und Störfelder von benachbarten Stromleitern oder beispielsweise durch rotierende Magnetfelder in der Umgebung eines Generators. Daher ist die Diskriminierung zwischen dem zu messenden Magnetfeld und den parasitären Streufeldern der Umgebung sehr schwer, da selbst bei hohen Strömen von einigen Hundert Ampere die Magnetfelder, die den Leiter umgeben, oft nur in der Größenordnung von wenigen Millitesla liegen. Die Feldstärke der zu messenden Magnetfelder ist damit häufig nur unwesentlich höher als die Feldstärke der parasitären Streufelder. For a non-contact, low-loss and electrically isolated Measurement of an electrical current is particularly suitable the measurement of the magnetic field generated by the current, for what sensor elements, such as Hall sensors, magnetoresistive resistors or magnetotransistors are suitable. In many applications, a very accurate current measurement is used across several orders of magnitude and one if possible low susceptibility to failure required, the location of the required, highly sensitive current or magnetic field sensors generally highly electromagnetic is, in particular by stray fields and interference fields from neighboring Conductors or rotating, for example Magnetic fields in the vicinity of a generator. Hence the Discrimination between the magnetic field to be measured and the parasitic stray fields in the area are very difficult, because even at high currents of a few hundred amperes the magnetic fields, that surround the conductor, often only on the order of magnitude of a few millitesla. The field strength of the to be measured Magnetic fields are often only slightly higher than the field strength of the parasitic stray fields.

Es sind allgemein empfindliche und gut gegen solche parasitären Störungen abgeschirmte Magnetfeldsensoren bekannt, wobei häufig zusätzlich das Magnetfeld durch einen sogenannten Magnetkreis konzentriert wird - beispielsweise in Form eines Flusskonzentrators - , so dass das Magnetfeld für die Messung verstärkt wird. Zusätzliche bekannte Maßnahmen umfassen eine geeignete Beschaltung der Sensoren - beispielsweise in Form von ASICs oder als diskrete Schaltkreise - , wodurch eine möglichst hohe Empfindlichkeit der Messung realisiert wird. Allgemein bekannt ist ebenfalls, das zu messende Magnetfeld nicht direkt zu registrieren, sondern durch die Erzeugung eines Gegenfeldes am Ort des Sensors zu eliminieren. Aus der Kenntnis des benötigten Gegenfeldes, welches beispielsweise durch eine Spule erzeugt werden kann, schließt man dann auf das zu messende Magnetfeld zurück. Vorteil dieser bekannten Kompensationsmethode ist, dass man das Magnetfeld sehr genau auf Null abgleichen kann, wenn man einen sehr sensitiven Sensor verwendet. Dieser Sensor muss lediglich den Nullabgleich des Magnetfeldes messen. Selbst bei sehr hohen, zu messenden Magnetfeldern wird der Sensor nicht in Sättigung gehen, da er stets nur das kompensierte Magnetfeld, das heißt die resultierende aus dem zu messenden Magnetfeld und des Gegenfeldes, zu registrieren hat. Nachteilig bei den bekannten Kompensationsmethoden ist, dass diese im allgemeinen eine eigene, aufwendige Beschaltung und zusätzlichen Bauraum für den das Kompensationsfeld erzeugenden Magnetfeldgenerator benötigen.They are generally sensitive and good against such parasitic ones Interference shielded magnetic field sensors known, wherein often the magnetic field by a so-called Magnetic circuit is concentrated - for example in the form of a Flux concentrator - so that the magnetic field for the measurement is reinforced. Additional known measures include a suitable wiring of the sensors - for example in Form of ASICs or as discrete circuits - which realized the highest possible sensitivity of the measurement becomes. The magnetic field to be measured is also generally known not to register directly, but through generation to eliminate an opposing field at the location of the sensor. From knowledge of the required opposing field, which for example can be generated by a coil closes then back to the magnetic field to be measured. Advantage of this well-known compensation method is that you have the magnetic field can adjust very precisely to zero if you have one very sensitive sensor used. This sensor only has to measure the zero balance of the magnetic field. Even at The sensor does not become very high magnetic fields to be measured go into saturation because it only ever compensates for the compensated magnetic field, that is, the resulting from the magnetic field to be measured and the opposite field. adversely with the known compensation methods, this is generally a separate, complex circuit and additional Space for the one generating the compensation field Need magnetic field generator.

Vorteile der ErfindungAdvantages of the invention

Die erfindungsgemäße Vorrichtung zur Messung eines Magnetfeldes und die erfindungsgemäße Strommessvorrichtung gemäß den Merkmalen der nebengeordneten Ansprüche haben demgegenüber den Vorteil, dass sowohl die Sensorik als auch die Erzeugung des Gegenfeldes auf einem einzigen Substrat integriert sind. Dadurch ergibt es sich, dass sich mit einer erfindungsgemäßen Kompensationsmethode mit einem einzigen, hochempfindlichen Sensor sehr große Messbereiche abdecken lassen, da die eigentliche Magnetfeldmessung aus dem erzeugten Gegenfeld resultiert. Weiterhin ist es vorteilhaft, die bisher bekannten externen oder schaltungstechnischen Kompensationsmethoden durch eine On-chip-Lösung zu ersetzen. Weiterhin ist von Vorteil, dass der erfindungsgemäße Magnetfeldsensor, der Magnetfeldgenerator für das Kompensationsfeld und die Ansteuer- und Auswerte-Logik auf einem einzigen Chip integriert sind. Der den zu messenden Strom tragenden Leistungsteil - das heißt der Leiterabschnitt, durch den der zu messende Strom fließt - kann ebenfalls vorteilhaft auf dem Chip integriert werden. Hieraus ergibt sich für die Herstellung des Sensors, der Intelligenz - das heißt der Auswerte- und Steuer-Logik - und des Magnetfeldgenerators auf einem einzigen Chip der Vorteil, dass die Herstellung kostengünstig und platzsparend zu bewerkstelligen ist. Weiterhin macht eine On-chip-Kompensationsmethode den externen Schaltungsaufwand und zusätzliche Komponenten überflüssig, die bei Kompensationsmethoden gemäß dem Stand der Technik bisher notwendig sind. Weiterhin reduziert sich auch der Montageaufwand gegenüber bisherigen Kompensationslösungen. Der Bauraum für den Sensor und den Magnetfeldgenerator reduziert sich ebenfalls auf den einzigen integrierten Chip, welcher lediglich in die Applikation zu integrieren ist. Aufgrund der Integration ist es weiterhin möglich, externe Stör- und Streufelder aufgrund der kompakten Bauform gut abzuschirmen. Weiterhin ist es für die Herstellung möglich, sämtliche Komponenten, das heißt den Leistungsteil, den Sensor, die Ansteuerungs- und Auswerte-Logik, kostengünstig in einem einzigen Prozess herzustellen.The device according to the invention for measuring a magnetic field and the current measuring device according to the invention have the characteristics of the subordinate claims the advantage that both the sensors and the generation of the opposing field integrated on a single substrate are. This results in that with an inventive Compensation method with a single, highly sensitive sensor cover very large measuring ranges leave, since the actual magnetic field measurement from the generated Opposing field results. It is also advantageous that previously known external or circuitry compensation methods to be replaced by an on-chip solution. Farther it is advantageous that the magnetic field sensor according to the invention, the magnetic field generator for the compensation field and the control and evaluation logic in one Chip are integrated. The one carrying the current to be measured Power section - that is, the conductor section through which the current to be measured flows - can also be beneficial be integrated into the chip. This results in the manufacture of the sensor, the intelligence - that is, the evaluation and control logic - and the magnetic field generator A single chip has the advantage of being inexpensive to manufacture and is space-saving. Farther makes an on-chip compensation method the external one Circuitry and additional components unnecessary, the compensation methods according to the prior art are currently necessary. Furthermore, the Assembly effort compared to previous compensation solutions. The installation space for the sensor and the magnetic field generator is reduced also on the only integrated chip, which can only be integrated into the application. Due to the integration it is still possible to use external Shielding interference and stray fields due to the compact design. Furthermore, it is possible for the production all components, i.e. the power section, the sensor, the control and evaluation logic, inexpensive in in a single process.

Zeichnungdrawing

Ausführungsbeispiele der Erfindung sind in der Zeichnung dargestellt und werden in der nachfolgenden Beschreibung näher erläutert. Es zeigen

  • Figur 1 eine schematische Skizze einer ersten Ausführungsform der erfindungsgemäßen Vorrichtung,
  • Figur 2 eine zweite Ausführungsform der erfindungsgemäßen Vorrichtung und
  • Figur 3 eine Darstellung des Funktionsprinzips der erfindungsgemäßen Vorrichtung.
    • Embodiments of the invention are shown in the drawing and are explained in more detail in the following description. Show it
  • FIG. 1 shows a schematic sketch of a first embodiment of the device according to the invention,
  • Figure 2 shows a second embodiment of the device according to the invention and
  • Figure 3 shows the principle of operation of the device according to the invention.

    • Beschreibung der AusführungsbeispieleDescription of the embodiments

    In Figur 1 ist eine schematische Skizze eines ersten Ausführungsbeispiels einer erfindungsgemäßen Vorrichtung 1 dargestellt. Die erfindungsgemäße Vorrichtung 1 umfasst auf einem Substrat 10 einen Bereich 50 und eine Auswerte- und Ansteuerungsschaltung 60, welche in einem weiteren Bereich des Substrates 10 vorgesehen ist. Das Substrat 10 ist erfindungsgemäß insbesondere als Halbleitersubstrat, insbesondere als Siliziumsubstrat, vorgesehen. Der Bereich 50 des Substrates 10 umfasst erfindungsgemäß insbesondere einen ersten Teilbereich 20, einen zweiten Teilbereich 30 und einen dritten Teilbereich 40. Der erste Teilbereich 20 ist erfindungsgemäß insbesondere als Teilabschnitt eines stromtragenden Leiters ausgebildet, welcher einen Strom trägt, der im Bereich 50 vertikal durch das Substrat 10 fließt. Hierdurch ergibt sich ein Magnetfeld in der Substratebene, welches durch den im ersten Teilbereich 20 senkrecht durch das Substrat hindurchfließenden Strom hervorgerufen wird. Der zweite Teilbereich 30 umfasst den Magnetfeldgenerator, das heißt, eine Anordnung, die einen vertikal durch das Substrat 10 fließenden Strom generiert, so dass ein Magnetfeld entsteht, welches dem von dem durch den ersten Teilbereich 20 fließenden Strom erzeugten Magnetfeld entgegengesetzt ist. Im dritten Teilbereich 40 umfasst der Bereich 50 des Substrates 10 eine Anordnung zum Sensieren eines Magnetfeldes, wobei die Anordnung zum Sensieren eines Magnetfeldes das resultierende Magnetfeld aus dem im ersten Teilbereich 20 und im zweiten Teilbereich 30 fließenden Strom sensiert. In Figur 1 sind keine Verbindungsleitungen zwischen der Auswerteschaltung 60 und dem Bereich 50 des Halbleitersubstrates 10 dargestellt. Diese sind jedoch selbstverständlich vorhanden, um eine Steuerungsmöglichkeit und Auswertemöglichkeit zu schaffen. Weiterhin sind auch Anschlüsse von dem Substrat 10 zu der externen Umgebung des Substrates 10 in Figur 1 nicht dargestellt.In Figure 1 is a schematic sketch of a first embodiment a device 1 according to the invention. The device 1 according to the invention comprises on one Substrate 10 an area 50 and an evaluation and control circuit 60, which in a further area of the substrate 10 is provided. The substrate 10 is according to the invention in particular as a semiconductor substrate, in particular as Silicon substrate provided. The area 50 of the substrate 10 comprises, in particular, a first partial area 20, a second section 30 and a third Subarea 40. The first subarea 20 is according to the invention in particular as a section of a current-carrying conductor formed, which carries a current in the region 50th flows vertically through the substrate 10. This results in a magnetic field in the substrate plane, which by the im first portion 20 flowing vertically through the substrate Electricity is generated. The second section 30 comprises the magnetic field generator, i.e. an arrangement, the one flowing vertically through the substrate 10 Electricity is generated so that a magnetic field is created, which the current flowing through the first partial region 20 generated magnetic field is opposite. In the third section 40, region 50 of substrate 10 comprises an arrangement for sensing a magnetic field, the arrangement the resulting magnetic field for sensing a magnetic field from that in the first section 20 and in the second Partial area 30 flowing current sensed. In Figure 1 are no connecting lines between the evaluation circuit 60 and the region 50 of the semiconductor substrate 10. However, these are of course available to a Possibility of control and evaluation to create. Furthermore, there are also connections from the substrate 10 to the external environment of the substrate 10 not shown in Figure 1.

    In Figur 2 ist eine schematische Skizze eines zweiten Ausführungsbeispiels der erfindungsgemäßen Vorrichtung 1 dargestellt. Dargestellt ist wiederum das Substrat 10, die Auswerte-Logik 60, sowie der Bereich 50 des Substrates 10, welche den ersten Teilbereich 20, den zweiten Teilbereich 30 und den dritten Teilbereich 40 umfasst. Auch in Figur 2 sind die Verbindungsleitungen sowohl zwischen der Auswerte-Logik 60 und dem Bereich 50 als auch nach extern nicht dargestellt. Im Gegensatz zum in Figur 1 dargestellten ersten Ausführungsbeispiel ist das in Figur 2 dargestellte zweite Ausführungsbeispiel derart vorgesehen, dass der Bereich 50 insbesondere im wesentlichen eine runde Form aufweist, wobei auch die Teilbereiche 20, 30, 40 eine im wesentlichen runde Form aufweisen. Bei der Figur 1 ist der Bereich 50 und seine Teilbereiche 20, 30, 40 im wesentlichen durch eine rechtekkige beziehungsweise insbesondere quadratische Form dargestellt.In Figure 2 is a schematic sketch of a second embodiment the device 1 according to the invention. The substrate 10, the evaluation logic, is again shown 60, as well as the area 50 of the substrate 10, which the first partial area 20, the second partial area 30 and includes the third section 40. Also in Figure 2 are the connecting lines between the evaluation logic 60 and the area 50 as well as not shown externally. In contrast to the first shown in Figure 1 The exemplary embodiment is the second shown in FIG Embodiment provided such that the area 50th in particular has a substantially round shape, wherein also the partial areas 20, 30, 40 are essentially round Have shape. In FIG. 1, the area is 50 and its Subareas 20, 30, 40 essentially by a rectangular or shown in particular square shape.

    In Figur 3 ist eine Prinzipskizze des Funktionsprinzipes der erfindungsgemäßen Vorrichtung dargestellt. Es wird angenommen, dass im ersten Teilbereich 20, der in Figur 3 nicht dargestellt ist, ein erster vertikaler Stromfluss vorherrscht, welcher in Figur 3 durch einen mit dem Bezugszeichen 21 versehenen Pfeil dargestellt ist. Der erste Strom 21 produziert in der gestrichelt dargestellten und ebenfalls mit dem Bezugszeichen 10 versehenen Substratebene ein durch einen ringförmigen und mit dem Bezugszeichen 22 versehenen Pfeil dargestelltes erstes Magnetfeld. Das erste Magnetfeld 22 wird auch als das zu messende Magnetfeld 22 bezeichnet. Im zweiten Teilbereich 30 herrscht bei der erfindungsgemäßen Vorrichtung ein zweiter Stromfluss vor, welcher in der Figur 3 durch einen mit dem Bezugszeichen 31 versehenen Pfeil dargestellt ist. Der zweite Teilbereich 30 ist in der Figur 3 ebenfalls nicht dargestellt. Der zweite Strom 31 produziert in der Substratebene 10 ein zweites Magnetfeld 32, welches durch einen ringförmigen und mit dem Bezugszeichen 32 versehenen Pfeil dargestellt ist, welches gegenüber dem ersten Magnetfeld 22 gegenläufig orientiert ist. Das zweite Magnetfeld 32 wird insbesondere auch als Kompensationsfeld 32 oder Gegenfeld 32 bezeichnet. Die im dritten Teilbereich 40 angeordneten Magnetfeldsensoren registrieren im wesentlichen nur, das aus dem ersten Magnetfeld 22 und dem zweiten Magnetfeld 32 resultierende Magnetfeld, welches in Figur 3 nicht eigens durch ein Bezugszeichen dargestellt ist.In Figure 3 is a schematic diagram of the functional principle of Device according to the invention shown. It is believed, that in the first section 20, which is not in FIG. 3 is shown, a first vertical current flow prevails, which in Figure 3 by one with the reference numeral 21 provided arrow is shown. The first stream 21 produced in the dashed and also with the reference numeral 10 provided by a an annular one and provided with the reference number 22 First magnetic field shown by arrow. The first magnetic field 22 is also referred to as the magnetic field 22 to be measured. In the second sub-area 30 there is in the invention Device before a second current flow, which in the figure 3 represented by an arrow provided with the reference number 31 is. The second partial area 30 is in FIG. 3 also not shown. The second stream 31 produces in the substrate plane 10 a second magnetic field 32, which by an annular one with the reference numeral 32 Arrow is shown, which is opposite the first Magnetic field 22 is oriented in opposite directions. The second magnetic field 32 is in particular also used as a compensation field 32 or Counter field 32 designated. Those arranged in the third partial area 40 Magnetic field sensors essentially register only that from the first magnetic field 22 and the second magnetic field 32 resulting magnetic field, which in FIG. 3 is not specifically represented by a reference number.

    Das Prinzip der Erfindung beruht darauf, dass ein vertikaler Stromfluss, das heißt der erste Strom 21, durch einen Leiter oder einen Halbleiterchip - das heißt in der Figur 1 und 2 insbesondere im ersten Teilbereich 20 angeordnet - ein ringförmiges, den Leiter beziehungsweise den Chip umgebendes Magnetfeld - erstes Magnetfeld 22 -erzeugt. Es ist daher vorteilhaft, einen stromtragenden Leiter beziehungsweise Halbleiter im Zentrum eines Halbleiterchips beziehungsweise des Bereiches 50 zu platzieren. Dies ist in Figur 1 und 2 auch dargestellt, da sich der erste Teilbereich 20 jeweils im wesentlichen im Zentrum des Bereiches 50 befindet. Der im ersten Teilbereich 20 befindliche Leiter ist erfindungsgemäß insbesondere als Leistungstransistor, beispielsweise als Power-MOS, Bipolartransistor, etc. vorgesehen, dessen Zellen sich im ersten Teilbereich 20 befinden. Wird dieser Leistungsteil des Chips mit magnetfeldsensitiven Elementen, beispielsweise magnetfeldsensierenden Zellen - die beispielsweise auf der Nutzung des Halleffekts, des magnetoresistiven Effekts, des Magnetotransistoreffekts etc. beruhen - , so kann man mit dieser magnetfeldsensitiven Zellstruktur das erste Magnetfeld 22 messen, welches den im ersten Teilbereich 20 befindlichen Leistungsteil radial umgibt. Hierdurch ist es möglich, das erste Magnetfeld 22 direkt zu messen. Das Umgeben des ersten Teilbereiches 20 mit magnetfeldsensitiven Elementen ist in Figur 1 und 2 dadurch dargestellt, dass der dritte Teilbereich 40 insbesondere auch den ersten Teilbereich 20 umgibt. Um jedoch mit hochempfindlichen Sensoren einen sehr großen Messbereich abzudecken, ist es vorteilhaft, eine Kompensationsmethode zu verwenden, mit der das zu messende Magnetfeld 22 jeweils, insbesondere auf Null, abgeglichen wird. Zur Steigerung der Messempfindlichkeit und um einen möglichst großen Messbereich zu realisieren ist es daher vorteilhaft, eine weitere Zellstruktur zwischen dem im dritten Teilbereich 40 vorgesehenen Magnetfeld sensierenden Zellen und dem im ersten Teilbereich 20 vorgesehenen eigentlichen stromtragenden Leistungsteil vorzusehen. Diese zwischen dem Sensorteil - im dritten Teilbereich 40 - und dem Leistungsteil - im ersten Teilbereich 20 - liegende Zellstruktur hat die Aufgabe, ein Kompensationsmagnetfeld 32 zu erzeugen. Vorteilhaft kann dies beispielsweise durch Zellen erfolgen, die einen regelbaren, vertikalen Stromfluss - der Strom 31 zur Erzeugung des Gegenfeldes - erzeugen, beispielsweise mittels eines Leistungstransistors beziehungsweise mittels Power-MOS-Zellen. Beispielsweise kann in einem BCD-Prozess durch vergrabene Strukturen ein entsprechender vertikaler Stromfluss 31 mit entgegengesetzt zum zentralen Hauptstrom 21 liegender Richtung realisiert werden.The principle of the invention is based on the fact that a vertical Current flow, that is to say the first current 21, through a conductor or a semiconductor chip - that is to say in FIGS. 1 and 2 arranged in particular in the first partial area 20 - an annular, magnetic conductor surrounding the conductor or the chip - First magnetic field 22 - generated. It is therefore advantageous a current-carrying conductor or semiconductor in the center of a semiconductor chip or To place area 50. This is also in Figures 1 and 2 shown, since the first partial area 20 is essentially each located in the center of area 50. The one in the first Sub-area 20 conductor is according to the invention in particular as a power transistor, for example as a power MOS, Bipolar transistor, etc. provided whose cells are located in the first section 20. Will this power section of the chip with magnetic field sensitive elements, for example magnetic field-sensing cells - for example on the use of the Hall effect, the magnetoresistive Effect, the magnetotransistor effect, etc. are based -, so you can with this magnetic field sensitive cell structure measure the first magnetic field 22, which is the one in the first partial area 20 radially surrounds the power section. hereby it is possible to measure the first magnetic field 22 directly. Surrounding the first partial area 20 with magnetic field sensitive Elements is shown in Figures 1 and 2 that the third section 40 in particular also the surrounds the first partial area 20. However, with highly sensitive Sensors to cover a very large measuring range it is advantageous to use a compensation method with the magnetic field 22 to be measured in each case, in particular on Zero, is adjusted. To increase the sensitivity and to realize the largest possible measuring range it is therefore advantageous to have a further cell structure between the magnetic field provided in the third partial area 40 sensing cells and that provided in the first section 20 to provide the actual current-carrying power section. This between the sensor part - in the third section 40 - and the power section - lying in the first section 20 Cell structure has the task of a compensation magnetic field 32 to generate. This can be advantageous, for example done by cells that have an adjustable, vertical Current flow - the current 31 for generating the opposing field - generate, for example by means of a power transistor or by means of power MOS cells. For example can enter a BCD process through buried structures corresponding vertical current flow 31 with opposite realized to the central main stream 21 lying direction become.

    Der Stromfluss (zweiter Strom 31) im zweiten Teilbereich 30 ist so zu wählen, dass am Ort der Sensorzellen im dritten Teilbereich 40 das erzeugte Kompensationsfeld 32 entgegengesetzt zu dem Feldverlauf des vom zentralen Leistungsteils im ersten Teilbereich 20 stammenden Magnetfeldes 22 gerichtet ist. Auf diese Weise erhält man im äußeren, magnetfeldsensitiven und im dritten Teilbereich 40 untergebrachten Chipbereich zwei gegenläufige Magnetfelder 22, 32. Durch geeignete Variation des Stromflusses in dem zweiten Teilbereich 30, das heißt in der mittleren Zellstruktur, kann man das Feld des Leistungsteiles, welches im ersten Teilbereich 20 vorgesehen ist, am Ort der Sensorzellen, das heißt im dritten Teilbereich 40, je nach Bedarf kompensieren. Bei Abwesenheit eines zweiten Stromes 31 messen die im dritten Teilbereich 40 untergebrachten Sensorzellen das ungestörte Feld 22 des im ersten Teilbereich 20 untergebrachten zentralen Leistungsteils.The current flow (second current 31) in the second partial region 30 is to be chosen so that at the location of the sensor cells in the third Sub-area 40 opposite the generated compensation field 32 to the field profile of the central power section in the first partial region 20 originating magnetic field 22 directed is. In this way you get outside, magnetic field sensitive and the chip area accommodated in the third partial area 40 two opposing magnetic fields 22, 32. By suitable Variation of the current flow in the second partial region 30, that is, in the middle cell structure, you can see the field of the power section, which is provided in the first section 20 is at the location of the sensor cells, i.e. in the third Compensate section 40 as required. In the absence of a second current 31 measure those in the third section 40 housed sensor cells the undisturbed field 22 of the Central power section housed in the first section 20.

    Dies ermöglicht es, über einen sehr großen Messbereich hinweg, den Einsatz von hochempfindlichen Sensorzellen im dritten Teilbereich 40, die die Kompensation der Magnetfelder 22, 32 sehr genau ermöglichen und eine entsprechend hohe Messempfindlichkeit realisieren können. Aus der Kenntnis des Zusammenhangs zwischen dem erzeugten Kompensationsfeld 32 und dem zur Erzeugung des Kompensationsfeldes 32 benötigten zweiten Strom 31 kann die Größe des vom zentralen Leistungsteil im ersten Teilbereich 20 stammenden Magnetfeldes 22 ermittelt werden. Erfindungsgemäß ist es also vorgesehen, im zweiten Teilbereich 30 ein zweites Mittel vorzusehen, welches das Kompensationsfeld 32 erzeugt und welches erfindungsgemäß insbesondere als Leistungstransistor vorgesehen ist. Erfindungsgemäß ist daher insbesondere ein zweites Mittel vorgesehen, welches im dritten Teilbereich 40 untergebracht ist und magnetfeldsensitive Elemente umfasst, welche ein in der Ebene des Substrates 10 verlaufendes Magnetfeld sensieren, wobei das sensierte Magnetfeld entweder dem resultierenden Magnetfeld aus dem ersten Magnetfeld 22 und dem zweiten Magnetfeld 32 entspricht - wenn das zweite Magnetfeld 32 durch Einschalten des im zweiten Teilbereich 30 befindlichen Magnetfeldgenerators nicht verschwindet - oder wobei das resultierende Magnetfeld gleich dem ersten Magnetfeld 22 ist - wenn der im zweiten Teilbereich 30 befindliche Magnetfeldgenerator ausgeschaltet ist.
    Durch periodisches Ein- und Ausschalten des Magnetfeldgenerators kann auch eine periodische Modulation des ersten Magnetfeldes 22 durch Überlagerung des variierenden Feldes 32 erfolgen, wodurch frequenzsensitive Messmethoden (z.B. Verwendung von Lock-In-technik oder anderer rauschunterdrückender Messmethoden) zur Messung des Magnetfeldes 22 eingesetzt werden können.    This makes it possible, over a very large measuring range, to use highly sensitive sensor cells in the third partial area 40, which enable the magnetic fields 22, 32 to be compensated very precisely and can achieve a correspondingly high measuring sensitivity. From the knowledge of the relationship between the generated compensation field 32 and the second current 31 required to generate the compensation field 32, the size of the magnetic field 22 originating from the central power unit in the first partial area 20 can be determined. According to the invention, provision is therefore made for a second means to be provided in the second partial region 30, which generates the compensation field 32 and which, according to the invention, is provided in particular as a power transistor. According to the invention, a second means is therefore provided in particular, which is accommodated in the third partial region 40 and comprises magnetic field-sensitive elements which sense a magnetic field running in the plane of the substrate 10, the sensed magnetic field being either the resulting magnetic field from the first magnetic field 22 and the second magnetic field 32 corresponds - if the second magnetic field 32 does not disappear when the magnetic field generator located in the second partial area 30 is switched on - or wherein the resulting magnetic field is equal to the first magnetic field 22 - if the magnetic field generator located in the second partial area 30 is switched off.
    By periodically switching the magnetic field generator on and off, the first magnetic field 22 can also be periodically modulated by superimposing the varying field 32, as a result of which frequency-sensitive measurement methods (for example using lock-in technology or other noise-suppressing measurement methods) can be used to measure the magnetic field 22 ,

    Erfindungsgemäß ist es insbesondere vorgesehen, die erfindungsgemäße Vorrichtung in einem einzigen Halbleiterprozess herzustellen.According to the invention, it is particularly provided that the invention Device in a single semiconductor process manufacture.

    Die beschriebene On-chip-Kompensationsmethode beziehungsweise die erfindungsgemäße Vorrichtung kann auch mehrfach auf einem Chip angewendet beziehungsweise wiederholt werden. Je nach Anwendung kann auch die stromtragende Struktur im ersten Teilbereich 20 ringförmig um die zentralliegende Kompensationsstromstruktur im zweiten Teilbereich 30 angeordnet werden. Dies bedeutet gegenüber den Figuren 1 und 2 eine Vertauschung des ersten Teilbereiches 20 und des zweiten Teilbereiches 30. The described on-chip compensation method, respectively the device according to the invention can also be used several times be applied or repeated on a chip. ever After application, the current-carrying structure in the first Partial area 20 in a ring around the central compensation current structure arranged in the second partial area 30 become. Compared to FIGS. 1 and 2, this means a Exchange of the first partial area 20 and the second Subarea 30.

    Die erfindungsgemäße Magnetfeldmessvorrichtung beziehungsweise Strommessvorrichtung ist vorteilhaft mit einer Ansteuer- und Auswerte-Logik auf dem Substrat 10 gemeinsam integriert.The magnetic field measuring device according to the invention, respectively Current measuring device is advantageous with a control and evaluation logic integrated on the substrate 10 together.

    Für die erfindungsgemäße Vorrichtung ist die Kombination von verschiedenen Funktionen, wie beispielsweise die Leistungstreiber, die Sensorik und die Intelligenz, notwendig, wofür insbesondere Mischprozesse, wie ein BCD-Prozess besonders vorteilhaft ist. Als Ausführungsformen der Erfindung sind generell alle Magnetfeldsensoren geeignet, die auf lateral zur Chipfläche des Substrates 10 verlaufende Felder empfindlich sind, insbesondere alle Elemente, die nach dem Hallprinzip arbeiten.For the device according to the invention, the combination of various functions, such as the performance drivers, the sensors and the intelligence, necessary for which in particular mixed processes, such as a BCD process in particular is advantageous. As embodiments of the invention In general, all magnetic field sensors based on lateral fields running to the chip area of the substrate 10 are sensitive, especially all elements after the Hall principle work.

    Die vollständige Umschließung der im dritten Teilbereich 40 vorgesehenen Sensorzellen der beiden anderen Teilbereiche 20, 30 macht es erfindungsgemäß möglich, im dritten Teilbereich 40 das Umlaufintegral des aus dem ersten Magnetfeld 22 und dem zweiten Magnetfeld 32 resultierenden Magnetfeldes zu bestimmen, wodurch direkt der resultierende Strom durch den geschlossenen Integrationspfad zugänglich ist. Erfindungsgemäß ist es sowohl vorgesehen, das Gegenfeld 32 durch den zweiten Strom 31 so zu wählen, dass das resultierende Feld auf Null abgeglichen ist; alternativ ist es aber auch möglich, das Gegenfeld 32 lediglich in diskreten Abständen regeln beziehungsweise einstellen zu können, so dass allgemein das resultierende Feld nicht verschwindet, sondern lediglich (wesentlich) kleiner als das zu messende Magnetfeld 22 ist. In diesem Fall würde auf das zu messende Magnetfeld in zwei Schritten geschlossen werden, nämlich einmal durch das zweite Magnetfeld 32 und zum anderen durch die Messung der Stärke des resultierenden Magnetfeldes. Bei einem Abgleich zu Null des resultierenden Magnetfeldes muss lediglich angeschaut werden, welches Gegenfeld 32 erforderlich ist.The complete enclosure of the third section 40 provided sensor cells of the other two sections 20, 30 makes it possible according to the invention, in the third partial area 40 the orbital integral of the first magnetic field 22 and the second magnetic field 32 resulting magnetic field determine what directly results in the resulting current through the closed integration path is accessible. According to the invention it is both provided that the opposing field 32 through the second stream 31 to choose so that the resulting field is adjusted to zero; alternatively, it is also possible regulate the opposing field 32 only at discrete intervals or to be able to adjust, so that general the resulting field does not disappear, but only is (substantially) smaller than the magnetic field 22 to be measured. In this case, the magnetic field to be measured would be in two Steps are closed, namely once by the second Magnetic field 32 and the other by measuring the strength of the resulting magnetic field. With a comparison too Zero of the resulting magnetic field just needs to be looked at which counter field 32 is required.

    Claims (7)

    Vorrichtung (1) zur Messung eines Magnetfeldes (22), mit einem zweiten Mittel zur Sensierung des Magnetfeldes (22), mit einem ersten Mittel zur Erzeugung eines einstellbaren Kompensationsmagnetfeldes (32) am Ort (40) des zweiten Mittels, wobei zur Messung des Magnetfeldes (22) das Kompensationsmagnetfeld (32) derart eingestellt vorgesehen ist, dass vom zweiten Mittel ein, im Vergleich zur Stärke des Magnetfeldes (22) insbesondere kleines, resultierendes Magnetfeld sensiert wird, wobei das zweite Mittel und das erste Mittel auf einem Substrat (10) monolithisch integriert vorgesehen sind.Device (1) for measuring a magnetic field (22), with a second means for sensing the magnetic field (22), with a first means for generating an adjustable Compensation magnetic field (32) on site (40) of the second means, for measuring the magnetic field (22) the compensation magnetic field (32) is set in this way it is envisaged that the second means one, in comparison the strength of the magnetic field (22) in particular small, resulting magnetic field is sensed, whereby the second agent and the first agent on a substrate (10) are provided monolithically integrated. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass das Magnetfeld (22) von einem Stromfluss (21) durch einen Leiter erzeugt wird, wobei der Leiter einen Leiterabschnitt umfasst, wobei der Leiter auf dem Substrat (10) monolithisch integriert vorgesehen ist.Device according to Claim 1, characterized in that the magnetic field (22) is generated by a current flow (21) through a conductor, the conductor comprising a conductor section, the conductor being provided in a monolithically integrated manner on the substrate (10). Vorrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der Leiter, das erste Mittel und das zweite Mittel in einem Bereich (50) des Substrates (10) vorgesehen ist, wobei der Leiter im Zentrum des Bereichs (50) vorgesehen ist, wobei das erste Mittel in der Substratebene den Leiter umschließend vorgesehen ist und wobei das zweite Mittel in der Substratebene das erste Mittel umschließend vorgesehen ist.Apparatus according to claim 1 or 2, characterized in that the conductor, the first means and the second means is provided in a region (50) of the substrate (10), the conductor being provided in the center of the region (50), the the first means is provided in the substrate plane surrounding the conductor, and the second means in the substrate plane is provided surrounding the first means. Vorrichtung nach Anspruch 2 oder 3, dadurch gekennzeichnet, dass der Leiter und das erste Mittel als Leistungstransistoren vorgesehen sind.Device according to claim 2 or 3, characterized in that the conductor and the first means are provided as power transistors. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das zweite Mittel als Magnetfeld sensitive Elemente vorgesehen ist, wobei die Magnetfeld sensitiven Elemente ein in der Ebene des Substrates (10) verlaufendes Magnetfeld sensieren.Device according to one of the preceding claims, characterized in that the second means is provided as magnetic field sensitive elements, the magnetic field sensitive elements sensing a magnetic field running in the plane of the substrate (10). Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass eine Auswerteschaltung (60) vorgesehen ist, wobei die Auswerteschaltung (60) auf dem Substrat (10) monolithisch integriert vorgesehen ist.Device according to one of the preceding claims, characterized in that an evaluation circuit (60) is provided, wherein the evaluation circuit (60) is provided monolithically integrated on the substrate (10). Strommessvorrichtung zur Messung der elektrischen Stromstärke eines elektrischen Stromes (21) in einem Leiter, wobei der Strom (21) ein Magnetfeld (22) hervorruft und wobei das Magnetfeld (22) mittels einer Vorrichtung nach einem der vorhergehenden Ansprüche messbar vorgesehen ist.Current measuring device for measuring the electrical current an electrical current (21) in a conductor, wherein the current (21) creates a magnetic field (22) and wherein the magnetic field (22) by means of a device one of the preceding claims provided measurably is.
    EP02023102A 2001-11-23 2002-10-15 Device for measuring a magnetic field and measuring a current Ceased EP1314993A3 (en)

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    Publication number Priority date Publication date Assignee Title
    EP2037286A1 (en) * 2007-09-13 2009-03-18 Micronas GmbH Measuring device for measuring a magnetic field
    WO2013023643A1 (en) 2011-08-18 2013-02-21 Universität Stuttgart Current measuring device
    DE102011110648A1 (en) 2011-08-18 2013-02-21 Universität Stuttgart Current sensor for measuring high-current required for electric drive of motor car, has evaluation circuit that is adapted to determine change in non-constant excitation current recorded evaluate signals for current measurement

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    EP1314993A3 (en) 2010-01-06
    DE10157509A1 (en) 2003-06-05

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