DE112015005195T5 - Magnetic sensor, manufacturing method therefor, and current detector using it - Google Patents

Abstract

A magnetic sensor includes: a substrate having a main surface; at least two magnetoresistive effect elements formed on the main surface and connected to a power terminal of a bridge circuit; at least two magnetoresistive effect elements formed on the main surface and connected to a ground terminal of the bridge circuit; a first region in which one of the at least two magnetoresistive effect elements connected to the power connection and one of the at least two magnetoresistive effect elements connected to the ground connection are arranged; a second region in which a further at least two magnetoresistive effect elements connected to the power connection and a further one of the at least two magnetoresistive effect elements connected to the ground connection are arranged; and a default coil having a first default applying portion for biasing the first area with a default magnetic field and a second default biasing portion for imparting the second area with a default magnetic field, magnetically sensitive directions of the two to the power terminal connected magnetoresistive effect elements are the same, magneto-sensitive directions of the two connected to the ground terminal magnetoresistive effect elements are the same, and the difference between the cross-sectional area of the first target-impingement portion and the cross-sectional area of the second default impingement portion 35, 4% or less.

Description

Technical area

The present invention relates to a magnetic sensor detecting a magnetic field and a current detector detecting an electric current by detecting the magnetic field generated by the current with the magnetic sensor.

background

A current detector detecting a current flowing through a power line is known. This current detector is adapted to detect with a magnetic sensor the magnetic field generated by the current, and thus to measure the current based on the output of the magnetic sensor (for example, reference 1). Magnetic sensors suitable for use in such a current detector may use magnetoresistive effect (MR) elements, such as Giant Magnetoresistive Effect (GMR) and Tunnel Magnetoresistive Effect (TMR) elements. Element). Two MR elements are connected in series with a voltage applied to both ends, and then a potential (output potential) between the two MR elements is measured, so that the strength of the magnetic field to which the MR elements are exposed is detected can.

 MR elements such as the GMR or TMR element have extremely high sensitivity, so that it is possible to detect a small magnetic field or a small change of a magnetic field induced by a small current flow. On the other hand, these MR elements are also susceptible to magnetic fields such as the magnetic field caused by geomagnetism or electronic devices. Therefore, in order to accurately measure the magnetic field with the magnetic sensor by means of the MR element, it is necessary to suppress the influence of any magnetic interference field. In particular, for example, a magnetic shield may be provided which covers the MR element, whereby the influence of a magnetic interference field on the MR element is suppressed.

The provision of a magnetic shield, however, leads to an increase in the number of parts of the magnetic sensor, and thus to an increase in the total manufacturing cost of the magnetic sensor. Furthermore, the size of the magnetic sensor may increase as the magnetic shield is provided. In particular, when the measuring current is large when the magnetic sensor is installed in a current detector, a small-sized magnetic shield may become magnetically saturated. This requires a larger magnetic shield. As a result, the magnetic sensor becomes much larger.

In order to reduce the cost and size of the magnetic sensor, it is desirable to eliminate the magnetic shield. For this reason, methods have been explored of how MR elements can be arranged to suppress any influence of magnetic interference fields on the MR elements.

 Reference 1 discloses a current detector capable of suppressing the influence of each magnetic noise field. A magnetic sensor has four MR elements. Two of these MR elements are connected in series and form a first half-bridge circuit. The remaining two MR elements are also connected in series and form a second half-bridge circuit. The first half-bridge circuit and the second half-bridge circuit are connected in parallel with each other, forming a bridge circuit. The magnetosensitive direction (direction of magnetization of a certain layer) of each MR element in the first half-bridge circuit is aligned with the magnetosensitive direction of each MR element in the second half-bridge circuit, so that the influence of magnetic noise fields on the respective Half-bridge circuits can be equated. Therefore, a difference (differential output) between an output potential of the first half-bridge circuit and an output potential of the second half-bridge circuit is averaged out, and the influence of the magnetic noise field on the respective half-bridge circuits can thus be compensated.

Because the MR element has a free layer, a magnetic default field can be applied to the MR element in order to improve the measurement accuracy. In the technology of Reference 1, to impose magnetic fields on respective MR elements, a hard target layer of ferromagnetic material is disposed on both sides of each MR element.

Documents of the prior art

publications

• Document 1: WO 2012/117784 A

Brief description of the invention

Problem to be solved by the invention

In the technology according to document 1, the influence of magnetic Completely compensate interference fields, the first half-bridge circuit and the second half-bridge circuit have the same magnetic field measuring properties when a magnetic field gradient is measured. However, depending on the temperature, the hard target layer of the ferromagnetic material varies considerably in its magnetic field strength. Once the default magnetic field varies, a structure of the magnetic domains of the free layer in the MR element that represents the half-bridge circuit changes. The change of the magnetic domain structure of the free layer results in a variation in the magnetic sensing property of the MR element.

 As the temperature of the magnetic sensor changes, the respective hard default layers may have different temperatures. As a result, the strengths of the default magnetic fields generated by the respective hard pattern layers become different. Thus, there occurs a difference in the magnet measuring property between the respective MR elements, which might lead to measurement errors of the magnetic sensor.

Accordingly, it is an object of the present invention to provide a magnetic sensor showing small variations in measurement errors due to temperature and a current detector using the same.

Means of solving the task

According to a first aspect of the present invention, there is provided a magnetic sensor comprising:
at least two magnetoresistive effect elements formed on the main surface and connected to the power terminal of a bridge circuit;
at least two magnetoresistive effect elements formed on the main surface and connected to the ground terminal of the bridge circuit;
a first region in which one of the at least two magnetoresistive effect elements connected to the power connection and one of the at least two magnetoresistive effect elements connected to the ground connection are arranged;
a second region in which another one of the at least two magnetoresistive effect elements connected to the power connection and a further one of the at least two magnetoresistive effect elements connected to the ground connection are arranged; and
a default coil having a first default applying portion for biasing the first range with a default magnetic field and a second default biasing portion for imparting the second range with a default magnetic field
magnetosensitive directions of the two magnetoresistive effect elements connected to the power connector are the same,
magneto-sensitive directions of the two connected to the ground terminal magnetoresistive effect elements are the same, and
the difference between the cross-sectional area of the first preselecting part and the cross-sectional area of the second preselecting part is 35.4% or less.

 In the magnetic sensor according to the first aspect of the present invention, the default magnetic fields are applied by the default coil, so that the current flowing through the default coil is controlled so as to keep the default magnetic field constant. This arrangement can suppress variations in the default magnetic field due to the temperature. The difference between the cross-sectional area of the first target urging portion and the cross-sectional area of the second preselecting urging portion is set to 35.4% or less, whereby the difference in magnetic strength between the default magnetic field and the first target pressurizing portion is set. Part and the default magnetic field of the second default-applying part can be kept small, whereby measurement errors of the magnetic sensor can be suppressed.

In the magnetic sensor of a second aspect of the present invention according to the first aspect
The difference between the thickness of the first target applying part and the thickness of the second default applying part is 17.7% or less.

In the magnetic sensor of a third aspect of the present invention according to the first or second aspect
For example, the difference between the distance from the magnetoresistive effect element in the first region to the first biasing part and the distance from the magnetoresistive effect element in the second region to the second biasing part is 5.78% or less.

In the magnetic sensor of a fourth aspect of the present invention according to any of the first to third aspects
the difference in thickness between at least two magnetoresistive effect elements connected to the power connector is 3.0% or less, and
For example, the difference in thickness between at least two magnetoresistive effect elements connected to the ground terminal is 3.0% or less.

In the magnetic sensor of a fifth aspect of the present invention according to the fourth aspect
The difference between the thickness of the at least two magnetoresistive effect elements connected to the power terminal and the thickness of the at least two magnetoresistive effect elements connected to the ground terminal is 3.0% or less.

In the magnetic sensor of a sixth aspect of the present invention according to any one of the first to fifth aspects
For example, the difference between the thickness of the first target pressurizing part and the thickness of the second preselecting pad is 3.0% or less.

In the magnetic sensor of a seventh aspect of the present invention according to any one of the first to sixth aspects
the two arranged in the first region magnetoresistive effect elements are connected in series,
the two arranged in the second region magnetoresistive effect elements are connected in series,
the magnetosensitive directions of the two magnetoresistive effect elements arranged in the first region are opposite to each other, and
the magnetosensitive directions of the two magnetoresistive effect elements arranged in the second region are opposite to each other.

In the magnetic sensor of an eighth aspect of the present invention according to any one of the first to sixth aspects, the
a magnetoresistive effect element arranged in the first region and connected to the power connection, and the further magnetoresistive effect element arranged in the second region and connected to the ground connection being connected in series,
are the one arranged in the first region and connected to the ground terminal magnetoresistive effect element and the other, arranged in the second region and connected to the power supply magnetoresistive effect element connected in series,
the magnetosensitive directions of the two magnetoresistive effect elements arranged in the first region are the same, and
For example, the magnetosensitive directions of the two magnetoresistive effect elements arranged in the second region are the same.

In the magnetic sensor of a ninth aspect of the present invention according to any one of the first to eighth aspects
the default coil further comprises a default coil bypass part, and
For example, the cross-sectional area of the default coil bypass part is greater than the cross-sectional area of each of the first and second default apply portions.

In the magnetic sensor of a tenth aspect of the present invention according to any one of the first to ninth aspects
the magnetic sensor further comprises a feedback circuit, and
For example, the feedback circuit is configured to generate a feedback magnetic field based on the magnetic field strength detected by the magnetoresistive effect element, wherein the feedback magnetic field is sized to balance the detected magnetic field strength.

According to an eleventh aspect of the present invention
there is provided a current detector comprising: a power line having a void between a branching position and a merging position, and a first current path and a second current path separated by the void; and
the magnetic sensor according to one of the first to tenth aspects, which is arranged in the void.

In the current detector of a twelfth aspect of the present invention according to the eleventh aspect
the magnetic sensor is disposed within the void such that the magnetosensitive direction of a particular layer of the magnetoresistive effect element in the magnetic sensor is perpendicular to the current directions in the first current path and in the second current path.

In the current detector of a thirteenth aspect of the present invention according to the eleventh or twelfth aspect
The current detector further includes a power line having a bypass part that bypasses the magnetic sensor.

In the current detector of a fourteenth aspect of the present invention according to any one of the eleventh to thirteenth aspect
For example, the substrate of the magnetic sensor has a first substrate with a first region and a second substrate with a second region, wherein the first substrate is separated from the second substrate.

According to a fifteenth aspect of the present invention, a method of manufacturing a magnetic sensor comprises the steps of:
Providing a substrate having a major surface;
Forming a bridge circuit with, on the main surface, a power connection, a ground connection, at least two magnetoresistive effect connected to the power connection. Elements, and at least two magnetoresistive effect elements connected to the ground terminal; and
Forming a default coil having a first default apply part for applying a first region having a default magnetic field and a second default apply part for applying a second region to a default magnetic field, wherein in the first region one of the at least two magnetoresistive effect elements connected to the power connection and one of the at least two magnetoresistive effect elements connected to the earth connection, wherein in the second area another of the at least two magnetoresistive effect elements connected to the power connection and a further one of the at least two arranged with the Erdanschuss connected magnetoresistive effect elements, wherein
the step of forming the bridge circuit includes:
simultaneously forming the at least two magnetoresistive effect elements connected to the power connector; and
simultaneously forming the at least two magnetoresistive effect elements connected to the ground terminal.

In the manufacturing method of a sixteenth aspect of the present invention according to the fifteenth aspect, the step of forming the bridge circuit includes:
simultaneously forming the at least two magnetoresistive effect elements connected to the power connection and the at least two magnetoresistive effect elements connected to the ground connection.

In the manufacturing method of a seventeenth aspect of the present invention according to the fifteenth or sixteenth aspect, d
the first default application part and the second default application part are formed simultaneously.

Effect of the invention

The magnetic sensor according to the present invention is capable of reducing variations in the measurement errors due to the temperature by using a default coil. Further, the difference in cross-sectional areas between the two default applying portions is restricted to a predetermined proportion or less, thereby making it possible to reduce the measurement errors of the magnetic sensor.

Brief description of the drawings

1 FIG. 10 is a schematic circuit diagram of a magnetic sensor according to a first embodiment of the present invention. FIG.

2A Fig. 10 is a plan view of the magnetic sensor of the first embodiment of the present invention; and 2 B is a cross-sectional view taken along the line 2B-2B in FIG 2A ,

3A Fig. 12 is a schematic plan view of a magnetic sensor used for the simulation; and 3B FIG. 12 is a graph illustrating an element temperature relative to the thickness of a default coil made on the basis of the simulation result.

4A . 4B . 4C , and 4D FIG. 12 are diagrams for explaining differences in the cross-sectional area and in the thickness between default applying portions of the default coil. FIG. 4A Figure 3 is a schematic perspective view of an element and the default coil in a first region. 4B Figure 3 is a schematic side view of the element and the default coil in the first region. 4C is a cross-sectional view of the element and the default coil along the line 4C-4C of 4A , 4D FIG. 12 is a cross-sectional view of the element and the coil in the first region and a second region. FIG.

5 FIG. 12 is a graph showing the results of measuring the zero point (zero drift) of the differential output relative to the ambient temperature.

6A and 6B are conceptual diagrams for explaining angles formed by magneto-sensitive directions of two magnetoresistive effect elements.

7 shows the relationship between a distance (μm) from the magnetoresistive effect element to the default coil and a magnetic field strength (mT).

8th Fig. 12 is a graph showing the relationship between the magnetic field (mT) in the default direction and a midpoint output (mV).

9 FIG. 12 is a diagram for explaining the difference in the distance from the magnetoresistive effect element to the default applying part of the default coil.

10 FIG. 15 is a diagram for explaining the angle formed by the default magnetic field direction of the target coil and the magnetosensitive direction of the magnetoresistive effect element.

11 FIG. 12 is a schematic circuit diagram of a magnetic sensor according to the second embodiment. FIG.

12 FIG. 12 is an element arrangement diagram of the magnetic sensor according to the second embodiment. FIG.

13A and 13B are graphs obtained by measuring a change of the differential output relative to the magnetic noise field, wherein 13A on a magnetic interference field in the X direction, and 13B refers to a magnetic interference field in the Y direction.

14 FIG. 12 is a schematic circuit diagram of the magnetic sensor according to the third embodiment. FIG.

15 FIG. 12 is a schematic circuit diagram of the magnetic sensor according to the fourth embodiment. FIG.

16 FIG. 12 is a schematic circuit diagram of the magnetic sensor according to the fifth embodiment. FIG.

17A FIG. 12 is a schematic plan view of the magnetic sensor according to the sixth embodiment; FIG. 17B and 17C FIG. 12 are schematic plan views showing only the structures of parts of the magnetic sensor; FIG. and 17D FIG. 12 is a schematic cross-sectional view taken along line 17D-17D of FIG 17C ,

18A FIG. 12 is a schematic plan view of the magnetic sensor according to the seventh embodiment; FIG. and 18B to 18D FIG. 12 are schematic plan views showing only the structures of parts of the magnetic sensor. FIG.

19A to 19C are layer views of the magnetic sensor of the first to seventh embodiments.

20A FIG. 15 is a schematic perspective view of the current detector according to the eighth embodiment; FIG. 20B FIG. 12 is a cross-sectional view taken along line 20B-20B of FIG 20A ; 20C Fig. 12 is a schematic perspective view of the current detector with a power line covered with a resin molded body; 20D FIG. 12 is a cross-sectional view taken along line 20D-20D of FIG 20C ; and 20E is a schematic view of the in the in 20A to 20D shown current detector used magnetic sensor.

21A FIG. 12 is a schematic perspective view of the current detector according to the ninth embodiment; FIG. 21B is a cross-sectional view taken along the line 21B-21B of 21A ; 21C is a partially enlarged cross-sectional view of 21B ; 21D Fig. 12 is a schematic perspective view of the current detector with a power line covered by a resin molded body; 21E is a cross-sectional view taken along the line 21E-21E of 21D ; and 21F is a schematic view of the in which in the 21A to 21E shown current detector used magnetic sensor.

22A Fig. 10 is a schematic perspective view of the current detector according to the tenth embodiment; 22B is a cross-sectional view taken along in FIG 22A shown line 22B-22B; 22C Fig. 12 is a schematic plan view of the current detector of the tenth embodiment; and 22D is a schematic view of the in which in the 22A to 22C shown current detector used magnetic sensor.

23A FIG. 12 is a schematic perspective view of the current detector according to the eleventh embodiment; FIG. 23B is a cross-sectional view taken along in FIG 23A shown line 23B-23B; 23C Fig. 11 is a plan view of the current detector of the eleventh embodiment; and 23D is a schematic plan view of one in the in 23A to 23C shown current detector used magnetic sensor.

24A FIG. 12 is a schematic perspective view of the current detector according to the twelfth embodiment; FIG. 24B is a cross-sectional view taken along in FIG 24A shown line 24B-24B; 24C Fig. 12 is a plan view of the current detector of the twelfth embodiment; and 24D is a schematic view of the in the in 24A to 24C shown current detector used magnetic sensor.

25A FIG. 12 is a schematic perspective view of the current detector according to the thirteenth embodiment; FIG. 25B is a cross-sectional view taken along the line 25B-25B of 25A ; 25C Fig. 10 is a schematic perspective view of the current detector with a power line covered with a resin molded body; 25D FIG. 12 is a cross-sectional view taken along line 25D-25D of FIG 25C ; and 25E is a schematic view of the in which in the 25A to 25D shown current detector used magnetic sensor 1 ,

26A is a perspective view of the current detector 60 according to the fourteenth embodiment; 26B is a side view of the current detector 60 in the fourteenth embodiment; and 26C is a top view of the current detector 60 in the fourteenth embodiment.

27A Fig. 10 is a plan view of a power line used in the current detector of the fifteenth embodiment; 27B is a side view of the power line; 27C is a perspective view of the power line; 27D is a schematic view of the together with the in 27A to 27C shown magnetic line used magnetic sensor; and 27E FIG. 15 is a partially enlarged view of a void of the power line in which the magnetic sensor of the current detector of the fifteenth embodiment is disposed.

28 FIG. 12 is a graph showing the relationship between the position in the width direction of the void in the power line used in the fifteenth embodiment and the magnetic flux density thereof.

29A FIG. 12 is a schematic perspective view of the current detector according to the sixteenth embodiment; FIG. 29B Fig. 12 is a cross-sectional view taken along line 29B-29B; 29C Fig. 12 is a schematic plan view of the current detector of the sixteenth embodiment; 29D is a schematic view of the in which in the 29A to 29C shown current detector used magnetic sensor; and 29E is a partially enlarged plan view of an area near a second void.

30A FIG. 12 is a schematic perspective view of the current detector according to the seventeenth embodiment; FIG. 30B is a cross-sectional view taken along in FIG 30A shown line 30B-30B; 30C is a schematic plan view of the current detector 60 the seventeenth embodiment; 30D is a schematic view of the in which in the 30A to 30C shown current detector 60 used magnetic sensor 1 ; 30E is a schematic plan view of the resin-molded magnetic sensor 1 ; and 30F FIG. 12 is a schematic cross-sectional view taken along line 30F-30F of FIG 30E ,

31 FIG. 12 is a schematic circuit diagram of the magnetic sensor according to the example. FIG.

32A Fig. 11 is a plan view of a silicon wafer for explaining measurement points for measuring outputs of a magnetic sensor in Example 1; 32B Fig. 12 is a column diagram showing the results of measurements of the output of the magnetic sensor in the example; and 32C FIG. 12 is a column diagram showing the results of measurements of the output of the magnetic sensor in the comparative example. FIG.

33A Fig. 12 is a graph showing the zero-point drift of the output of the magnetic sensor in the examples; and 33B Fig. 12 is a graph showing the zero-point drift of the output of the magnetic sensor in the comparative example.

34A Fig. 11 is a plan view of a silicon wafer for explaining measurement points for measuring outputs of the magnetic sensor in Example 3; and 34B Fig. 12 is a graph showing the measurement results of the output of the magnetic sensor in the example.

35 is a table showing the correction indices of the magnetic sensor in the example.

36A Fig. 10 is a flow chart for explaining the output correction of the magnetic sensor in the comparative example; and 36B Fig. 10 is a flowchart for explaining the output correction of the magnetic sensor in the example.

Detailed description of the invention

Hereinafter, embodiments of the invention will be described in detail with reference to the accompanying drawings. Although, in the description below, particular direction and position information (eg, "upper," "lower," "right," "left," "x direction," "y direction," "z direction," and others, these Words containing words of words) are to be understood as facilitating the understanding of the present invention with reference to the drawings, and not as limiting the technical scope of the present invention. Here, the "X direction," "Y direction," and "Z direction" are not necessarily aligned with the magnetosensitive directions, the direction of the default magnetic field, or the like, and are defined for each embodiment. The same reference numbers are used throughout the drawings for the same or similar parts or components, unless otherwise specified. The size and shape of each of the components shown in the drawings is purely illustrative, and these components may be of various sizes and shapes.

 The first to seventh embodiments describe variants of the magnetic sensor according to the present invention. The eighth to seventeenth embodiments describe variations of the current detector using the magnetic sensor according to the present invention.

 [Magnetic sensor]

A magnetic sensor with mainly four magnetoresistive effect elements will be described. Note that, in the present invention, the number of magnetoresistive effect elements is not limited to four. This is to be understood as including a different number (for example 6 or more) magnetoresistive effect elements can be used. The default coil is arbitrary as long as it can apply each of the corresponding elements to the desired default magnetic field. The shape or number of the default coils is not particularly limited.

First Embodiment

1 is a schematic circuit diagram of the magnetic sensor 1 according to the first embodiment of the present invention. The magnetic sensor 1 has a bridge circuit 5 with four magnetoresistive effect elements 10 (hereinafter referred to as "MR element" or "element"). Specifically, a first element connected to the power terminal Vcc 1-1 and a second element connected to ground terminal GND 1-2 connected in series and represent a first half-bridge circuit. The first element 1-1 and the second element 1-2 are in a first area 11 arranged. A first output port VM1 is between the first element 1-1 and the second element 1-2 educated. Similarly, a third element connected to the power connection Vcc 2-1 and a fourth element connected to the ground terminal GND 2-2 connected in series and constitute a second half-bridge circuit. The third element 2-1 and the fourth element 2-2 are in a second area 12 arranged. A second output terminal VM2 is between the third element 2-1 and the fourth element 2-2 educated.

The magnetosensitive directions of the respective elements 10 are by arrows 31 . 32 . 33 and 34 for each of the elements 10 specified. Although every element 10 is shown in a rectangular shape, this conceptually represents a resistance, and is not limited to a particular shape. For example, the element 10 be formed as elongated line in a meandering shape (a form that forms meanders).

2A is a plan view of the magnetic sensor 1 indicating the arrangement of the elements 10 and a coil 3 in the magnetic sensor 1 shows. 2 B is a cross-sectional view of the magnetic sensor 1 along the line 2B-2B of 2A , The Elements 10 and the default coil 3 are on the main surface 200 of the substrate 2 arranged. The term "default coil" as used herein means a coil for imparting the element with a default magnetic field. For example, the default coil is in 2 drawn in a rectangular shape with rounded corners and a rectangular hole in the middle. In practice, an elongated coil lead is wound from inside to outside in a coil shape, and includes the rectangular hole in the middle.

As in 2A shown is every element 10 represented by a solid line, but in fact is the element 10 placed below the coil and therefore can not be seen in the supervision. Regarding 2 B are the element 10 and the default coil 3 arranged with a gap in between. In the gap, for example, an insulating film (generally about 1.3 μm thick) is disposed. Note that the representation of wires, electrodes and the like in the 2A and 2 B has been omitted to the design of the magnetic sensor 1 easy to understand.

As in the 1 . 2A and 2 B shown, the magnetic sensor 1 according to the first embodiment of the present invention:
the substrate 2 with the main surface 200 ;
the two elements 1-1 and 2-1 and the two elements 1-2 and 2-2 where the two elements 1-1 and 2-1 on the main surface 200 formed and with the power connection (Vcc) in the bridge circuit 5 are connected, and the two elements 1-2 and 2-2 on the main surface 200 trained and connected to the ground terminal (GND) of the bridge circuit 5 are connected; and
a default coil 3 with default submission parts 310 and 320 that the first area 11 and the second area 12 with default magnetic fields 41 respectively. 42 apply, taking in the first area 11 an element 1-1 of the two elements connected to the power connection (Vcc) and one element 1-2 the two connected to the ground terminal (GND) element is disposed, and in the second region 12 the other element 2-1 the two elements connected to the power connection (Vcc) and the other element 2-2 the two connected to the ground terminal (GND) elements is arranged. The two with the power connection (Vcc) of the bridge circuit 5 connected elements 1-1 and 2-1 have the same magneto-sensitive direction while the two elements connected to the ground terminal (GND) of the bridge circuit 1-2 and 2-2 have the same magnetosensitive direction. The difference between the cross-sectional area of the first default apply part 310 in the first area 11 and the cross-sectional area of the second default apply part 320 in the second area 12 is set to 35.4% or less.

The inventors have focused on the difference in cross-sectional area between the default beaten parts 310 and 320 the default coil 3 and the allowable range of the difference in cross-sectional area between the default applying portions using the tolerance of the output potential of the magnetic sensor 1 based on simulation results of the magnetic sensor 1 examined.

<Simulation 1>

The simulation of the magnetic sensor 1 is performed under the following conditions: The electromagnetic field and heat simulation is performed by the analysis software JMAG (manufactured by JSOL Corporation) in consideration of physical phenomena of the magnetic sensor, including heat generation by current flow through the target coil, heat conduction to the substrate or element, and a change in resistance due to a change in the temperature of the components. 3A is a schematic plan view of the magnetic sensor used in the simulation 1 , The magnetic sensor 1 has a silicon substrate 2 on (with 1 mm width x 1 mm length x 0.3 mm thickness), one on the silicon substrate 2 arranged GMR element 100 (5 μm width x 100 μm length x 2 nm thickness) and a default coil 300 , The default coil 300 is a coil formed by winding a thin line (4 μm wide and 0.6 to 1.0 μm thick) of aluminum thin film in the XY plane. The default coil 300 is wound from inside to outside in a rectangular shape in the plan. The default coil 300 has a part (default admission part 330 ), who is seconded to the GMR element 100 leads. A gap distance between the lower surface of the default apply part 330 and an upper surface of the GMR element 100 is set to 1.3 μm. During the simulation, the thickness of the default apply part became 330 varied in a range of 0.6 to 1.0 microns.

When the default coil passes the current to pressurize the MR element with the default magnetic field, the default coil generates heat. The generated heat raises the temperature of the MR element (hereinafter referred to as "element temperature") directly below the target coil. The element temperature resulting from a current flow of 10 mA (the maximum current value expected for use in the current detector) through the default coil is determined by the simulation. The result is in 3B shown. The relationship between the 3B certain element temperature and the thickness of the default impingement portion 330 is given by the formula (1) given below. Element temperature (° C) = -88.25 (μm / ° C) × Coil thickness (μm) + 160.17 (1)

To determine the performance of the magnetic sensor, a permitted difference in thickness between the default applying portions is considered based on a normally allowable error range and a normally used voltage. Here, it has been found from the researches carefully conducted by the inventor that when a target maximum value error of the magnetic sensor (a maximum output error within a measurable range) is 0.05% or less, no correction is required and the output is so large, that only amplification meets the requirement of the magnetic sensor, so that it is possible to reduce the cost of an IC, an amplifier, etc., which would otherwise be held. This means that the target maximum value error of the magnetic sensor is preferably set as 0.05% or less. A general, applied to the power supply voltage of the magnetic sensor 1 is 5 V, while a maximum value of the output potential of the magnetic sensor is generally 150 mV. From these values, the tolerance of the output potential can be determined to 0.075 mV (150 mV × 0.05%) or less.

When a magnetic sensor is designed by setting a working value of 1 mV or less in an element temperature range of -40 ° C to 125 ° C (ie, a temperature range from the lower to the upper limit of 165 °), a permitted deviation of the Output potential (zero drift) per degree (ie, per ° C) 0.00606 mV (1 mV / 165 ° C) or less. Therefore, when the tolerance (0.075 mV) of the output potential is divided by the allowable zero drift of the output potential per degree (0.00606 mV / ° C), the total deviation of the element temperature is according to the tolerance of the output Potential 12.376 ° C (0.075 (mV) / 0.0606 (mV / ° C)).

By the application of the formula (1), the deviation in the element temperature of 12.736 ° C is converted into a deviation of the thickness of the default impingement portion 330: When x1 (μm) is the thickness of the default impingement portion 330 at a first temperature y1 (° C), and x2 (μm) is the thickness of the default impingement portion 330 at a second temperature y2 (° C), x1 and x2 are substituted in the formula (1): y1 = -88.25 × x1 + 160.17 (2) y2 = -88.25 × x2 + 160.17 (3)

The difference between the first temperature y1 and the second temperature y2 (a deviation in the element temperature) and the difference between the first thickness and the second thickness (a difference in thickness) have the following relationship: y1 - y2 = 88.25 (x1 - x2) Substituting herein y1-y2 = 12.376 ° C in the above formula, x1-x2 can be determined as follows: x1 - x2 = 0.14 (μm)

That is, to limit the deviation in element temperature to 12.736 ° C or less, the difference in the thickness of the default apply part must be 330 0.14 μm or less. In other words, the allowable difference in the thickness of the default apply part 330 is 0.14 μm or less.

Here, when the simulation is carried out, the ratio of the allowable difference (0.14 μm) in the thickness of the default impingement portion 330 to 0.8 μm ((0.6 μm + 1.0 μm) / 2), which is the average of a modified area of the thickness of the default impingement portion of 0.6 μm to 1.0 μm, as follows certainly: 0.14μm / 0.8μm = 0.175 (17.5%). Note that the average value of the thickness in the range of 0.6 μm to 1.0 μm can also be regarded as the average of a thickness of 0.6 μm and a thickness of 1.0 μm.

Regarding 3 and the above description becomes the following simulation result by using the specified thickness (specified as 0.8 μm in thickness) of the default applying portion of the default coil and the element (hereinafter a GMR element used as the element) receive. The substrate set as one of the simulation conditions has a large extension compared to the element or the default coil. Thus, the substrate has a high thermal potential and is less susceptible to heat, depending on the distance between the element and the feed coil and their materials. Thus, as the element temperature, that is, the maximum temperature of a part of the target coil as a heat source where the element is arranged is used as the temperature of the magnetic sensor. The current flowing through the default coil is 10 mA (expected maximum current value). The simulated result under the above conditions can be approximated by the formulaic relationship below: (Element temperature) = -70.6 × (default coil thickness) + 160.17 (1) '

The ratio of the zero-point temperature drift (temperature gradient of the output when the magnetic field to be measured is 0) to the maximum sensor output (output before amplification) of the magnetic sensor is determined to be 0.67% or less. This value is one which can be expected due to the properties, composition and size of the material, a wafer size, and the like, when a magnetoresistive effect element is made of a thin film. Further, when this value is divided by a temperature range which is set considering the ambient temperature, inverter or the like as the room temperature, the following value is determined: 0.67% / 165 ° C = 0.004% / ° C Or less. Then, the difference in temperature between elements required to reach the full-scale error of 0.05% or less, as mentioned above, becomes 0.05% / (0.004% / ° C) = 12, 5 ° C or less. From the difference in temperature between the elements as described above, a thickness is derived between any two points of the default coil: If y1 is an element temperature and x1 is the thickness of the default coil, and y2 is an element temperature and x2 is the thickness of the default coil, the following values are obtained from formula (1) ': y1 = -70.6x1 + 160.17 (2) ' y2 = -70.6x2 + 160.17 (3) ' By subtracting the formula ( 3 ) 'of the formula ( 2 ) 'the difference Δy in the temperature between the elements is obtained as follows: Δy = y1 - y2 = -70.6 (x1 - x2) (4) '

From the above-mentioned temperature difference of 12.5 ° C and the above-mentioned formula (4) ', it is found that in order to limit the zero-drift caused by heat generation of the default coil to 0.05% or less on the basis of of the formula y1 - y2 = 12.5 = -70.6 (x1 - x2), Δx (= x2 - x1), the ratio with respect to the thickness of the default coil must be only 17.7% or less. The generated heat output is proportional to the product of resistance and the square of the current. When the current is constant, the resistance is proportional to the thickness and width. In the present invention, only the thickness of the default coil is used as a parameter for the simulation, and its width is set to be constant. The same applies to the width. The sum of these variations, ie twice the variations in thickness, corresponds to the variation in the cross-sectional area of the default coil. That is, the total variations need only be 35.4% or less in cross-sectional area. Therefore, the magnetic sensor 1 According to the present invention, characterized in that the variations of the cross-sectional area between the default impingement parts are 35.4% or less.

The difference between the cross-sectional area of the first default apply part 310 in the first area 11 and the cross-sectional area of the second default imposition part 320 in the second area 12 is defined as follows.

Related to the 4A to 4D the difference in cross-sectional area between the default apply parts will be described below. 4A is a schematic perspective view of the element 10 ( 1-1 ) and the default coil 3 in the first area 11 , 4B is a schematic side view of the element 10 ( 1-1 ) and the default coil 3 in the first area 11 , 4C is a cross-sectional view of the element 10 ( 1-1 ) and the default coil 3 along the line 4C-4C of 4A , 4D is a cross-sectional view of the first area 11 arranged element 10 ( 1-1 ), in the second area 12 arranged element 10 ( 2-1 ), and in the first and second area 11 and 12 arranged default coil 3 , 4A to 4D illustrate four default coils 3 but the number of default coils 3 is not limited to four and only has to be one or more.

Regarding 4A to 4C becomes the default submission part 311 (Part of the first default submission part 310 in the first area 11 ), which is the element 10 ( 1-1 ) is applied with a default magnetic field by focusing on that in the first region 11 arranged element 10 ( 1-1 ). Other default submission parts containing the other elements 10 ( 1-2 . 2-1 . 2-2 ) with default magnetic fields are substantially the same as the default apply part 331 and their detailed description is therefore omitted.

The default submission part 311 the default coil 3 is a part of the element 1-1 subjected to the default magnetic field. In particular, as in 4B shown includes the default imposition part 311 one directly above the element 1-1 arranged area (area 311 between the points P-Q), and areas on either side of the area 311 are arranged between the points P-Q (area 311b between the points R-P and area 311c between points Q-S). The length (dimension along the longitudinal direction of the default coil 3 ) each of the areas 311 . 311b and 311c is essentially equal to the width 11w of the element 1-1 (Dimension in the X direction of the element 1-1 , please refer 4A ). Here, the points P and Q denote the positions at both ends of the element 1-1 in the side view ( 4B ), seen from the direction perpendicular to the magnetosensitive direction 31 of the element 1-1 (in other words, the magnetization direction of a solid layer of the element 1-1 ). The distance between the points P and Q is set as the dimension P-Q (which is identical to the width 11w of the element 1-1 is). The point R is from the point P only by the dimension P-Q in the magnetosensitive direction 31 spaced opposite direction. The point S is from the point Q only by the dimension P-Q in the magnetosensitive direction 31 spaced. Seen from above, the points R and S are outside the element 1-1 arranged.

As in 4C is shown to mean the cross-sectional area D11 of the default apply part 311 the entire cross-sectional area of the default apply part 311 in cross-section (ie, the cross-section along the line 4C-4C of 4A ) perpendicular to the longitudinal direction (direction of current flow through the default coil, the X direction) of the default coil 3 , As in 4C is shown, if four default coils 3 are included, the entirety of the respective cross-sectional areas D111, D112, D113 and D114 of the respective default coils 3 hereinafter referred to as "cross-sectional area D11 of the default apply part 311 " designated. In the area from point R to in 4B shown point S becomes, the cross-sectional area D11 of the default-applying part 311 measured at least four places, and from the measured values, the average is formed. This average is hereinafter referred to as "average cross-sectional area D11a of the default apply part 311 " designated.

The average cross-sectional area D12a of the default apply part 312 (please refer 2A ), which is the element 1-2 applied to the default magnetic field is determined in the same way. Then, a "cross-sectional area D1 of the first preselecting part becomes 310 the default coil 3 in the first area 11 "As the average of the average cross-sectional area D11a of the default impingement portion 311 and the average cross-sectional area D12a of the default apply part 312 Are defined.

Also, regarding the default submission part 321 (please refer 2A ), that in the second area 12 arranged element 2-1 applied with a default magnetic field, the average cross-sectional area D21a of the default impingement portion 321 (please refer 2A ) in the same way. Further, with regard to the default impingement portion 322 (please refer 2A ), that in the second area 12 arranged element 2-2 applied with a default magnetic field, the average cross-sectional area D22a of the default impingement portion 322 (please refer 2A ) in the same way. Then, as "cross-sectional area D2 of the second default apply part 320 the default coil 3 in the second area 12 ", The average of the average cross-sectional area D21a of the default imposition part 321 and the average cross-sectional area D22a of the default apply part 322 Are defined.

The difference between the cross-sectional area D1 of the first default apply part 310 the default coil 3 in the first area 11 and the cross-sectional area D2 of the second default apply part 320 the default coil 3 in the second area 12 can be determined from formula (5) given below. That is, the difference in the cross-sectional area is defined as the value obtained by dividing the difference (D1-D2) between the cross-sectional areas D1 and D2 by the average value ((D1 + D2) / 2) of the cross-sectional areas D1 and D2. Difference in cross-sectional area = (D1-D2) / ((D1 + D2) / 2) (5) In the manner described above, the cross-sectional area D1 of the first area becomes 11 and the cross-sectional area D2 of the second area 12 substituted in the above-mentioned formula (5) so that the difference in the cross-sectional areas between the default impingement parts of the default coil 3 in the first and second area 11 and 12 can be determined.

5 FIG. 12 is a graph showing the relationship between the ambient temperature and the zero point change (zero drift) of the differential output of the magnetic sensor 1 shows. The horizontal axis of the graph indicates the ambient temperature (° C), while the vertical axis indicates the zero-point drift (mV) of the differential output. Note that the zero-drift is defined as the difference between a reference value Vr and a zero point value Vm (ie, zero point value Vm-reference value Vr), where Vr is the zero point value of a differential output at room temperature (25 ° C) and Vm is the zero point value is a different ambient temperature.

5 shows two graphs. The graph marked by black diamond symbols "♦" shows measurement results in the bridge circuit 5 in a different direction. The graph marked by black square symbols "■" shows measurement results in the bridge circuit 5 in the same direction. The "other direction" used here means that in the 1 shown bridge circuit 5 the respective magnetosensitive directions 31 and 33 the two connected to the power connector (Vcc) elements 1-1 and 2-1 are not aligned with each other while the respective magnetosensitive directions 32 and 34 the two with the ground terminal (GND) of the bridge circuit 5 connected elements 1-2 and 2-2 are not aligned with each other. In the "bridge circuit used for the measurements 5 with different directions "is the magnetosensitive direction 31 of the element 1-1 and the magnetosensitive direction 33 of the element 2-1 formed angle 180 ° (angle α = 180 °, as in 6A shown), and by the magnetosensitive direction 32 of the element 1-2 and the magnetosensitive direction 34 of the element 2-2 formed angle is 180 ° (angle β = 180 °, as in 6B shown). The "same direction" used herein means that the respective magnetosensitive directions 31 and 33 the two with the power supply (Vcc) of the bridge circuit 5 connected elements 1-1 and 2-1 are aligned with each other while the respective magnetosensitive directions 32 and 34 the two with the ground terminal (GND) of the bridge circuit 5 connected elements 1-2 and 2-2 aligned with each other.

In the 1 shown bridge circuit 5 is used to measure the zero-point drift. Each element used 10 is one with a dimension in the transverse direction, ie, a width (dimension in the in 2 shown X-direction) of 10 microns, and a dimension in the longitudinal direction, ie, a length (dimension in the in 2 shown Y-direction) of 100 microns. The two elements are connected in series and form each of the two sets of half bridges (first half bridge formed from the elements 1-1 and 1-2 and second half bridge formed from the elements 2-1 and 2-2 ). These two sets of half-bridges are connected in parallel with each other around the bridge circuit 5 to build.

As in 5 shown, deviates in the bridge circuit 5 in the state of various directions, the zero-drift at ambient temperatures in the low temperature range (-40 ° C to 0 ° C) and in the high temperature range (60 ° C to 100 ° C) significantly from 0 mV (initial value: a zero value at room temperature). For example, when the ambient temperature is -40 ° C, the zero drift is -0.87 mV. When the ambient temperature is 100 ° C, the zero drift is 1.37 mV. In both ambient temperature ranges, the zero drift deviates extremely from 0 mV. On the other hand, lies in the bridge circuit 5 in the same direction, the zero drift at ambient temperatures from low temperature (-40 ° C) to high temperature (100 ° C) in a range of 0 mV to 0.15 mV, and does not deviate significantly from 0 mV.

Suppose the magnetosensitive directions 31 and 33 the two with the power supply (Vcc) of the bridge circuit 5 connected elements 1-1 and 2-1 , and also the magnetosensitive directions 32 and 34 the two connected to the ground terminal (GND) of the bridge circuit elements 1-2 and 2-2 are the same. In this case, the zero-point drift does not deviate drastically from 0 mV, as in 5 shown graph of "same direction".

The inventors have found that the zero-point drift due to the ambient temperature can be suppressed by the respective magnetosensitive directions 31 and 33 the two with the power supply (Vcc) of the bridge circuit 5 connected elements 1-1 and 2-1 placed in the same direction, and the respective magnetosensitive directions 32 and 34 the two with the ground terminal (GND) of the bridge circuit 5 connected elements 1-2 and 2-2 be placed in the same direction. On this basis, the present invention has been made.

For example, when an element can be formed according to a predetermined deposition method, at least the two elements to be connected to the power terminal (Vcc) become 1-1 and 2-1 simultaneously on the upper surface 200 of the substrate 2 formed, causing the magnetosensitive directions 31 and 33 the two elements 1-1 and 2-1 they are the same. The term "the magnetosensitive directions of the two elements 1-1 and 2-1 are the same "means that the magnetosensitive direction 31 of the element 1-1 not necessarily strictly the same in the strict sense as the magneto-sensitive direction 33 of the element 2-1 but that these magnetosensitive directions 31 and 33 only need to be substantially the same. Further, the term "the magnetosensitive directions are substantially the same" as used herein means that the magnetosensitive directions are aligned with each other sufficiently that the zero drift due to a change in ambient temperature can be sufficiently reduced (for example, the zero drift in the ambient temperature range from -40 ° C to 100 ° C within a range of -0.5 mV to +0.5 mV). For example, suppose as in 6A α is one of the magnetosensitive direction 31 of an element 1-1 and the magnetosensitive direction 33 of the other element 2-1 , When α is equal to or larger than 0 ° and smaller than 45 ° (0 ° ≦ α <45 °), the magnetosensitive directions become 31 and 33 essentially the same. Note that for α = 0 ° the two magnetosensitive directions 31 and 33 are completely the same.

In the 6A shown X-direction and Y-direction correspond to those in 2A shown X and Y directions. As in 6A shown is that of the two magnetosensitive directions 31 and 33 formed angle α is the difference between that of the magnetosensitive direction 31 of an element 1-1 and the Y direction formed angle α1 and that of the magnetosensitive direction 33 of the other element 2-1 and the angle α2 formed in the Y direction.

Likewise, at least two elements to be connected to the ground terminal (GND) 1-2 and 2-2 at the same time on the upper surface 200 of the substrate 2 formed such that the magnetosensitive directions 32 and 34 the two elements 1-2 and 2-2 they are the same. The term used herein "the respective magnetosensitive directions of the two elements 1-2 and 2-2 are the same "means that the magnetosensitive direction 32 of an element 1-2 not necessarily completely the same in the strict sense as the magneto-sensitive direction 34 of the other element 2-2 but that these magnetosensitive directions 32 and 34 only have to be substantially the same. The term "magneto-sensitive directions are substantially the same" as used herein means the same as above. Suppose, for example, that as in 6B shown β of the magnetosensitive direction 32 of an element 1-2 and the magnetosensitive direction 34 of the other element 2-2 formed angle is. When β is equal to or greater than 0 ° and less than 45 ° (0 ° ≦ β <45 °), the magnetosensitive directions become 32 and 34 essentially the same. Note that for β = 0 °, the two magnetosensitive directions 32 and 34 are completely the same.

In the 6B shown X and Y directions correspond to those in 2A shown X and Y directions. As in 6B shown is that of the two magnetosensitive directions 32 and 34 formed angle β is the difference between one of the magnetosensitive direction 32 of an element 1-2 and the Y direction formed angle β1 and one of the magnetosensitive direction 34 of the other element 2-2 and the angle α2 formed in the Y direction.

In the magnetic sensor 1 According to the first embodiment of the present invention, the difference in the thickness of the default coil 3 preferably 17.7% or less. The difference between the thickness of the first default apply part 310 the default coil 3 in the first area 11 and the thickness of its second default apply part 320 in the second area 12 is defined as follows.

Returning to the 4A to 4D The difference in thickness between the default applying parts will be described below. As in 4C shown, means the thickness M11 of the biasing member 311 the default coil 3 the thickness of the loading part 311 in cross section (ie along the line 4C-4C of 4A taken cross section) perpendicular to the longitudinal direction (the direction of current flow through the default coil 3 , or the X direction) of the default coil 3 , As in 4C clarifies, if four default coils 3 are included, the average of the thicknesses M111, M112, M113 and M114 of the respective feed bobbins 3 hereinafter referred to as "cross-sectional area M11 of the default apply part 311 " designated. In the area ranging from point R to in 4B shown point S, the thickness M11 of the default-applying part 311 measured at least four places, you from the reading is averaged. This average is hereinafter referred to as "average thickness M11a of the default apply part 311 " designated.

Also, the average thickness M12a of the default apply part becomes 312 (please refer 2A ), which is the element 1-2 with a default field applied determined. Then, the "thickness M1 of the first default applying part becomes 310 the default coil 3 in the first area 11 "As the average of the average layer thickness M11a of the default application part 311 and the average layer thickness M12a of the default impingement portion 312 Are defined.

Further, with respect to the default application part 321 (please refer 2A ), that in the second area 12 located element 2-1 applied with a default magnetic field, the average thickness M21a of the default impingement portion 321 determined in the same way. Further, with respect to the default application part 322 (please refer 2A ), that in the second area 12 located element 2-2 applied with a default magnetic field, the average thickness M22a of the default impingement portion 322 determined in the same way. Then, the thickness M2 of the second default applying part becomes 320 the default coil 3 in the second area 12 "As the average of the average layer thickness M21a of the default application part 321 and the average layer thickness M22a of the default impingement portion 322 Are defined.

The difference between the thickness M1 of the first default apply part 310 the default coil 3 in the first area 11 and the thickness M2 of the second default applying part 320 the default coil 3 in the second area 12 can be determined by the formula (6) below. That is, the difference in the thickness M is defined as the value obtained by dividing the difference (M1-M2) between the thicknesses M1 and M2 by the average value ((M1 + M2) / 2) of the thicknesses M1 and M2 , Difference in thickness = (M1 - M2) / ((M1 + M2) / 2) (6) In the manner described above, the thickness M1 of the first region 11 and the thickness M2 of the second area 12 and substituted in the above-mentioned formula (6), so that the difference in thicknesses between the default applying parts of the default coil 3 in the first and second area 11 and 12 can be determined.

Furthermore, the inventors have focused on the gap distance between the element 10 and the default coil 3 focused and a permitted range of the difference in gap distance between the element 10 and the default coil 3 by using the tolerance of the output potential of the magnetic sensor 1 based on the simulation result of the magnetic sensor 1 examined.

 <Simulation 2>

The simulation of the magnetic sensor 1 was performed using a magnetic sensor obtained by modifying parts of the magnetic sensor 1 ( 3A ) obtained in the above-mentioned simulation 1 has been used. Only the modified parts will be described below. The thickness of the default coil 300 (Thickness of the default apply part 300 ) was set at 0.8 μm. In the simulation, there was a gap distance between the lower surface of the default apply part 330 and the upper surface of the GMR element 100 (hereinafter referred to as "coil GMR distance") varies in the range of 0 μm to 2 μm.

7 Fig. 12 is a graph showing the relationship between the distance between the default coil and the element (GMR element) and the magnetic field strength. 8th Fig. 12 is a graph showing the relationship between the magnetic field in the default direction and a midpoint output. The formula relationship between the coil GMR distance and that of the GMR element 100 from the default imposition part 330 received magnetic field strength is given by formula ( 7 ): magnetic field strength (mT) = -0.0192 × (Coil GMR distance (μm)) + 0.7803 (7)

Based on the studies carefully conducted by the inventors, it is found that the magnetic sensor may possibly reach sensor variations of 0.5% or less overall, taking into account variations in temperature and other variation factors (ie, error factors other than the characteristics of the magnetic sensor, including an error of the amplifier and a mounting error) when the variations in the external magnetic field of the magnetic sensor are 0.1% or less. (Note that the external magnetic field means a different magnetic field than the magnetic field of the object to be measured and means the default magnetic field; in particular, when a feedback coil is present, a magnetic field other than the magnetic field of the As a result, it is desirable to set the sensor variations of the magnetic sensor to 0.1% or less due to magnetic noise fields. The general, to the power connector of the magnetic sensor 1 applied voltage is 5 V, while the full scale of the output potential of the magnetic sensor is generally 150 mV. When the minimum detected magnetic field is set to 0.1% full scale, the minimum detected magnetic field is 0.15 mV (150 mV × 0.1%). When the allowed variation in the output potential of the magnetic sensor 1 due to magnetic noise fields is set to 0.1% or less of the minimum detected magnetic field, the allowable variation in the output potential is determined to be 0.00015 mV (0.15 mV x 0.1%) or less.

As can be seen on the graph of 8th For example, in formula (8) below, the formulaic relationship for achieving an output potential error of 0.00015 mV or less is given below: 0.00015 = 0.011717 × (magnetic field strength) ² + 0.010218 × (magnetic field strength) (8) After solving the formula (8), it is found that in order to achieve a variation of the output potential of 0.00015 mV, it is found that the difference in the magnetic field strength is limited to 0.0144 mT or less.

From this default magnetic field difference and formula (7), the required coil GMR distance difference is given by the formula below: 0.00144 = 0.0702 × (distance) ² - 0.3847 × distance (9) By solving the formula (3), it was found that the required coil GMR pitch difference need only be 0.0377 μm or less. The ratio of this difference in distance to the thickness of the coil is determined to be 0.0377 / 1.3 = 2.9% or less. By solving this formula, x5 - x6 is 0.0377 μm (ie, x5 - x6 = 0.0377 μm). That is, in order to limit variations in the magnetic field intensity to 0.00144 mV or less, the coil GMR pitch difference must be 0.0377 μm or less.

Here, when the magnetic field strength is 1 mT, the ratio of the allowable coil GMR distance difference (0.0377 μm) to the coil GMR distance (the coil GMR distance is 1.3 μm in FIG 7 ) determined as follows: 0.0377 / 1.3 = 0.029 (2.9%). In this way, the allowable variation of the output potential of the magnetic sensor 1 due to magnetic noise fields to limit to 0.1% or less of the detection limit (resolution), the coil GMR distance difference is set to 2.9% or less relative to the coil GMR distance measured when the magnetic field strength is 1 mT is.

The following is considered: The relationship between a standardized (normalized) distance (standardized as a distance of 1.3 μm) from the default coil to the element (hereinafter a GMR element used as an element) and the magnetic field strength as in 7 and the above description, as well as the relationship between the magnetic field in the default direction and the center output as in FIG 8th and the above description. These considerations lead to the following:
Simulation conditions such as the above-mentioned conditions are set as follows: A silicon substrate is used as the substrate, and a default coil current is set to 10 mA (assumed maximum current value). In this case, the relationship below can be obtained by approximation based on the results of the magnetic field strength simulation from the default coil-element distance: (Magnetic field strength) = -0.0249 × (standardized default coil element distance) + 0.7803 (7) '

From the above-mentioned default magnetic field difference and formula (7) ', the required default coil-to-element distance difference is determined as follows: 0.00144 = -0.0249 × standardized distance (9) ' By solving the formula (9) ', it is found that the required default-coil-element pitch difference need only be 5.78% or less.

As mentioned above, the magnetic sensor should 1 the following relationship with respect to the one distance between the default coil 3 and at least two to the power terminal Vcc of the bridge circuit 5 connected elements 1-1 and 2-1 , and the other distance between the default coil 3 and at least two to the ground terminal GND of the bridge circuit 5 connected elements 1-2 and 2-2 fulfill. More specifically, the difference between these distances is preferable 5.78% or less, more preferably 2.9% or less, and still more preferably 1.9% or less.

The difference between a distance from each of the elements 1-1 and 1-2 to the default-load part of the default coil 3 in the first area 11 and the other distance from each of the elements 2-1 and 2-2 to the default-load part of the default coil 3 in the second area 12 is defined as follows.

With reference to the 4A to 4C and 9 the difference in the distance from the element to the default apply part will be described below. Note that 9 essentially the same as 4D , As in 4C shown, the distance between the element means 1-1 and the default submission section 311 the default coil 3 a distance L between the upper surface of the element 1-1 and the lower surface of the default coil 3 , As in 4C is shown, if the four default coils 3 are present, the average is the distances L between the element 1-1 and each of the default coils 3 (L111, L112, L113 and L114 as in 9 shown) as "distance L11 between the element 1-1 and the default coil 3 " designated. In the area, as in 4B from the point R to the point S, the distance L11 between the element 1-1 and the default submission part 311 measured in at least four places, and the average was formed from the measured values. This average is called the average distance L11a between the element 1-1 and the default submission part 311 Are defined.

Further, the average distance L12a with respect to the distance between the element becomes 1-2 and the default submission part 312 (please refer 2A ), which is the element 1-2 applied to the default field, determined in the same way. Then the "distance L1 between each of the elements 1-1 and 1-2 and the first default submission part 310 the default coil 3 in the first area 11 As the average of the average distance L11a between the element 1-1 and the default submission part 311 and the average distance L12a between the element 1-2 and the default submission part 312 Are defined.

Regarding the distance between that in the second area 12 arranged element 2-1 and the default submission part 321 (please refer 2A ), which is the element 2-1 With the default magnetic field applied, the average distance L21a between the element 2-1 and the default submission part 321 determined in the same way. Also the distance between that in the second area 12 arranged element 2-2 and the default submission part 322 (please refer 2A ), which is the element 2-2 is applied with the default magnetic field, the average distance L22a between the element 2-2 and the default submission part 322 determined in the same way. Then it is called "distance L2 between each of the elements 2-1 and 2-2 of the second default imposition part 320 the default coil 3 in the second area 12 "The average of the average distance L21a between the element 2-1 and the default submission part 321 and the average distance L22a between the element 2-2 and the default submission part 322 Are defined.

The difference between the distance L1 of each of the elements 1-1 and 1-2 in the first area 11 to the first default submission part 310 the default coil 3 and the distance L2 from each of the elements 2-1 and 2-2 in the second area 12 to the second default submission part 320 the default coil 3 can be determined by the formula (10) below. That is, the difference in the distance L is defined as a value obtained by dividing the difference (L1-L2) between the distances L1 and L2 by the average value ((L1 + L2) / 2) of the distances L1 and L2: Distance difference = (L1 - L2) / ((L1 + L2) / 2) (10) In the manner described above, the distance L1 in the first area 11 and the distance L2 in the second area 12 and substituted into the above-mentioned formula (10) so that the difference in the distance of each of the elements 1-1 . 1-2 . 2-1 and 2-2 to the corresponding default application part of the default coil 3 between the first area 11 and the second area 12 can be determined.

The magnetic sensor 1 According to the first embodiment of the present invention, a solid layer and a free layer may be included. When the magnetic sensor 1 is made, the respective layers (for example, the solid layer, the free layer, and the like) of at least two elements connected to the power terminal (Vcc) 1-1 and 2-1 preferably deposited simultaneously. That is, the two elements 1-1 and 2-1 are preferably formed simultaneously. In this way, the two connected to the power connector (Vcc) elements 1-1 and 2-1 corresponding layers with identical thickness, material, magnetic properties and the like. Furthermore, the thicknesses of the two element 1-1 and 2-1 be set identical to each other. The term "thickness of the element" as used herein means the average thickness of the element.

Also, the respective layers (eg, the fixed layer, the free layer, and the like) of at least two elements connected to the ground terminal (GND) become 1-2 and 2-2 preferably formed simultaneously. In this way, the two connected to the ground terminal (GND) elements 1-2 and 2-2 corresponding layers with identical thickness, material, magnetic properties and the like. Consequently, those from the elements 1-1 and 1-2 formed half-bridge circuit and those from the elements 2-1 and 2-2 formed half-bridge circuit having substantially the same characteristics of the magnetic field detection.

As mentioned above, when the magnetosensitive directions of at least two elements connected to the power terminal (Vcc) 1-1 and 2-1 are the same, and / or if the magnetosensitive directions of at least two connected to the ground terminal (GND) elements 1-2 and 2-2 they are the zero point drift of the magnetic sensor 1 be suppressed due to the ambient temperature. For this reason, the simultaneous formation of multiple elements can increase the accuracy of the magnetic sensor 1 increase. Therefore, when the magnetic sensor is used as part of the current detector, the amount of current flowing through the power line can be measured with extremely high accuracy.

In the magnetic sensor 1 According to the first embodiment of the present invention, the respective layers of all four elements 1-1 . 1-2 . 2-1 and 2-2 that the bridge circuit 5 form (namely at least two connected to the power connector (Vcc) elements 1-1 and 2-1 and at least two elements connected to the ground terminal (GND) 1-2 and 2-2 ) are deposited simultaneously. That is, the four elements 1-1 . 1-2 . 2-1 and 2-2 can be formed at the same time. That way, the four elements 1-1 . 1-2 . 2-1 and 2-2 can be formed simultaneously, which can reduce the number of manufacturing steps compared to the separate, pairwise production of two pairs of elements (one pair of elements 1-1 and 1-2 and another pair of elements 2-1 and 2-2 ). The magnetosensitive directions of all the elements may be the same, thereby enabling the zero-point drift of the magnetic sensor 1 due to the ambient temperature. Therefore, when the magnetic sensor is used as part of the current detector, the amount of current flowing through the power line can be measured with extremely high accuracy.

 The term "co-deposited" as used herein means that the layers (eg, solid layer and / or free layer) present in multiple elements can be deposited in the same deposition process. If multiple layers are deposited simultaneously (eg, solid layer and free layer), the deposition process must be performed multiple times. More specifically, to simultaneously deposit two layers present in each element, namely the solid layer and the free layer, the solid layer is deposited in a first deposition process and the free layer in a second deposition process.

The simultaneous deposition of respective layers of two or more elements can be confirmed by the material, the magnetic properties and the thickness of the layers. In particular, as for the thickness, the layers in the plural elements are formed on the same substrate at the same time, whereby the difference in thickness between these layers can be considerably reduced.

Generally, when silicon wafers of 150 mm in diameter than the substrate 2 are used, a paramagnetic layer for forming the free layer and a ferromagnetic layer for forming the solid layer deposited anywhere on the entire silicon wafer. When a film is formed on the entire silicon wafer in only one process (a batch) by a general deposition method (for example, sputtering), the defect range of the thickness of the film at each position of the silicon wafer is about 3 relative to an average thickness %. Then, these layers are partially etched to isolate the plurality of elements from each other, and further to separate the silicon wafers therefrom, whereby the magnetic sensor 1 will be produced. It is when the size of the magnetic sensor 1 for example, 2 mm × 2 mm, the error of each layer is 3% or less, usually 1% or less, preferably 0.5% or less, and more preferably 0.4% or less.

 In contrast, when a layer of the same material is deposited on each surface of a plurality of silicon wafers with the same deposition apparatus, the average thickness of the layers formed on one silicon wafer and the average thickness of the layers formed on another silicon wafer normally to a 15% error. That is, the error rate of the thickness of the co-deposition layer differs by an order of magnitude from that of various steps. Thus, with simultaneous deposition, the difference in the thickness of the layer between the elements is extremely small, making it possible to easily determine whether simultaneous deposition has been performed or not.

The difference in thickness between the elements 1-1 and 2-1 is preferably 3.0% or less, so that two elements with a minute difference in thickness between them can be obtained. The difference in thickness between the elements 1-1 and 2-1 more preferably 1.0% or less, more preferably 0.5% or less, and most preferably 0.4% or less. The expression "difference in thickness between the elements 1-1 and 2-1 As used herein means the difference between the average thickness of the element 1-1 and the average thickness of the element 2-1 ,

Likewise, the difference in thickness between the elements 1-2 and 2-2 preferably 3.0% or less, so that two elements having extremely small difference therebetween in thickness can be obtained. The difference in thickness between the elements 1-2 and 2-2 more preferably 1.0% or less, more preferably 0.5% or less, and most preferably 0.4% or less.

Further, the difference in thickness is among the elements 1-1 . 1-2 . 2-1 and 2-1 preferably 3.0% or less. The difference in thickness among them is more preferably 1.0% or less, more preferably 0.5% or less, and most preferably 0.4% or less. The expression "difference in thickness among the elements 1-1 . 1-2 . 2-1 and 2-2 As used herein means the difference between the maximum and minimum values among the average thicknesses of the respective elements 1-1 . 1-2 . 2-1 and 2-2 ,

In the magnetic sensor 1 According to the first embodiment of the present invention, the default coil is 3 preferably uniformly deposited. By uniform deposition of the default coil 3 can the elements 1-1 . 1-2 . 2-1 and 2-2 be subjected to substantially the same default magnetic field. Therefore, the difference in the temperature characteristic of the zero point can be significantly reduced, as described above, thereby producing a magnetic sensor with extremely high performance. Therefore, when the magnetic sensor is used as part of a current detector, the amount of current flowing through the power line can be measured with extremely high accuracy.

In the default coil 3 is the difference in thickness between the first default apply part 310 and the second default application part 320 preferably 3.0% or less. The difference therebetween in thickness is preferably 1.0% or less, and more preferably 0.5% or less. The term "difference in the thickness of the layer" as used herein means the difference between the average thickness of the first target applying part 310 and the average thickness of the second default apply part 320 , The first default submission part 310 and the second default task part 320 such that the difference therebetween in the thickness becomes extremely small should be the first default applying part 310 and the second default submission part 320 be deposited simultaneously.

1 FIG. 12 is a schematic circuit diagram of the magnetic sensor. FIG 1 According to the first embodiment of the present invention formed bridge circuit 5 , As in 2 shown are the first area 11 and the second area 12 next to each other, but physically separated from each other. As in 1 are shown, two elements are connected in series, which in the first and second area 11 and 12 are arranged. The two elements are connected so that the magnetization directions of the solid layers contained in them are anti-parallel to each other, thus forming the half-bridge in the corresponding region.

Further, those are at the upper side of the first area 11 shown element 1-1 and that on the upper side of the second area 12 shown element 2-1 through a first wiring 15 electrically connected to the power connector (Vcc). That at the bottom of the first area 11 shown element 1-2 and that on the lower side of the second area 12 shown element 2-2 are through a second wiring 16 electrically connected, which is connected to the ground terminal (GND). Further, in the first area 11 the element 1-1 and the element 1-2 through a third wiring 17 electrically connected to a first output terminal (VM1). Likewise, in the second area 12 the element 2-1 and the element 2-2 through a fourth wiring 18 electrically connected, which is connected to a second terminal (VM2).

In this way, the four elements to the bridge circuit 5 connected. As in 1 As used herein, the term "at least two elements connected to the power connection of the bridge circuit" used herein means the bridge circuit among the four 5 forming elements 1-1 . 1-2 . 2-1 and 2-2 the elements connected to the power supply (Vcc) 1-1 and 2-1 , The term "at least two elements connected to the ground terminal of the bridge circuit" as used herein means the bridge circuit among the four 5 forming elements 1-1 . 1-2 . 2-1 and 2-2 the elements connected to the ground terminal (GND) 1-2 and 2-2 ,

It is preferred that "at least two elements are connected to the current connection of the bridge circuit", in other words that the magnetosensitive direction of the element 1-1 at the power connection (Vcc) side in the first area 11 the same is like that of the element 2-1 at the power connector (Vcc) side in the second area 12 , Likewise, it is preferred that "at least two elements are connected to the ground terminal of the bridge circuit", in other words that the magnetosensitive direction of the element 1-2 at the ground connection (GND) side in the first area 11 the same is like that of the element 2-2 at the ground connection (GND) side in the second areas 12 , This is when the elements 1-1 . 1-2 . 2-1 and 2-2 a GMR or TMR with a fixed layer, the magnetization direction of the solid layer are the magnetosensitive direction. With this arrangement, similar elements, namely the element 1-1 and the element 2-1 , or the element 1-2 and the element 2-2 at the same time, so that the circuit configurations in the respective half-bridges can be the same, whereby the difference between them in the temperature characteristics of the zero point can be significantly reduced.

In each of the first and second areas 11 and 12 the two half-bridge forming elements are formed with the magnetization directions of the respective fixed layer of these elements in anti-parallel to each other. Further, the difference between one between the elements 1-1 and 1-2 obtained midpoint output (an output from the first output terminal VM1) and one between the elements 2-1 and 2-2 obtained from the center output (an output from the second output terminal VM2), whereby a larger output is obtained according to the magnitude of the magnetic noise. Thus, the measurement of the current value can be easily obtained when the amount of the current is measured.

As in 2 . 4 and 9 is shown in the magnetic sensor 1 According to the first embodiment of the present invention, the default coil 3 as a means for applying the default magnetic fields 41 and 42 used. When a permanent magnet or the like is used as a means for applying the default magnetic field, the magnetic force of the permanent magnet may be reduced, or its original magnetic force may not recover when the magnetic sensor used 1 is exposed to a high temperature. Consequently, the magnetic sensor could 1 do not fulfill his own function. The default coil 3 however, as a means for applying the default magnetic field does not reduce the magnetic force of the default coil 3 even if the magnetic sensor 1 is used at high temperature, and thus the magnetic sensor works 1 correctly.

As in 2 is shown in the magnetic sensor 1 according to the first embodiment, a default coil 3 in ring form over the main surface of the substrate 2 educated. As in 2 shown there as parts of the default coil 3 a first linear part 21 (a part of the first linear part 21 overlaps with the element in the plan view and corresponds to the default applying part of the present invention) and a second linear part 22 (Also, a part of the second linear part overlaps 22 in plan view with the element and corresponds to the default applying part of the present invention). The first linear part 21 and the second linear part 22 are by a third linear part 23 , a fourth linear part 24 , a curved part, and the like. In the present invention, when the first linear part 21 and the second linear part 22 the default coil 3 are formed in rectilinear form, other parts, ie, the third linear part 23 and the fourth linear part 24 not necessarily formed in a straight shape.

Regarding 2 becomes the default coil 3 formed as a single annular conduit. Alternatively, as in 4A to 4C shown, the default coil 3 be formed of a plurality of lines. In this case, the plurality of lines are formed and arranged at equal intervals so that each line forms a closed state. The default coils 3 are configured to conduct the same amount of current in the same direction through the plurality of closed lines. Alternatively, the default coil 3 in a substantially rectangular spiral shape by repeatedly bending a unidirectional conduit. The default coil 3 with the substantially rectangular spiral shape thus formed forms the first linear part 21 and the second linear part 22 with their default magnetic field substantially parallel to each other.

The first linear part 21 acts on those in the first area 11 arranged elements 1-1 and 1-2 with the default magnetic field. The second linear part 22 acts on those in the second area 12 arranged elements 2-1 and 2-2 with the default magnetic field. The direction of the first linear part 21 applied default magnetic field 41 is perpendicular to the magnetization direction of the solid layer in each of the elements 1-1 and 1-2 , and is when looking at the substrate 2 directed from top to left. The direction of the second linear part 22 applied default magnetic field 42 is perpendicular to the magnetization direction of the solid layer in each of the elements 2-1 and 2-2 , and is when looking at the substrate 2 directed from top to right. Thus, in the magnetic sensor 1 according to the first embodiment, the first area 11 applied default magnetic field opposite to the second area 12 applied default magnetic field aligned.

The shape of the default coil 3 is not on the in 2 shown limited, but may be any ring shape, as long as the first linear part 21 and the second linear part 22 parallel to each other and the default coil 3 the first and the second area 11 and 12 can act on the default magnetic field, that with the first and second linear part 21 and 22 acted upon default magnetic fields are opposite to each other.

In the magnetic sensor 1 According to the first embodiment of the present invention, in each of the first and second regions 11 and 12 at least two elements are arranged, each element having at least one fixed layer and a free magnetic layer whose magnetization direction varies according to the magnetic interference field with respect to the magnetization direction of the fixed layer. The elements suitable for use include GMR elements or TMR elements. It can be seen here that the elements can have further layers besides the solid layer and the free magnetic layer.

In the magnetic sensor 1 According to the first embodiment of the present invention, the difference between the magnetic field in the first region 11 and the magnetic field in the second region 12 and the output difference may change in proportion to the magnetic field. In this way, the difference between the magnetic fields in the first and second area 11 and 12 and the output difference changes in proportion to the magnetic field, so that the magnitude of the current value and the direction of the current can be detected when, for example, a magnetic field detecting element is used as the current sensor. When used as a magnetic sensor, the position, direction and the like can be detected.

In the magnetic sensor 1 According to the first embodiment of the present invention, the default coil is preferably arranged such that the element in the principal plane in the direction perpendicular to the magnetosensitive direction of the element is applied with the default magnetic field generated by the default coil. However, the default magnetic field is not limited to one that is applied to the element in the direction perpendicular to the magnetosensitive direction of the element. As in 10 This can be shown by the default coil 3 (the default submission part 311 ) generated default magnetic field 41 with respect to the magnetosensitive direction 31 of the element 1-1 be inclined, so that by the default magnetic field direction 41 the default coil 3 and the magnetosensitive direction 31 of the element 1-1 included angle γ is more than 0 ° and less than 180 ° (0 ° <γ <180 °). The same applies to other elements. Both from the default magnetic field direction 42 and the magnetosensitive direction 32 of the element 1-2 included angle, that of the default magnetic field direction 43 and the magnetosensitive direction 33 of the element 2-1 included angles, as well as from the default magnetic field direction 44 and the magnetosensitive direction 32 of the element 2-2 included angle may be greater than 0 ° and less than 180 °. Note that in 10 the default magnetic field direction is the -Y direction and the magnetosensitive direction is the X direction.

In the magnetic sensor 1 In particular, according to the first embodiment of the present invention, the element is a giant magnetoresistive effect element having a solid layer. The magnetization direction of the fixed layer corresponds to the magnetosensitive direction. With this arrangement, the output can be increased, and the polarity of the magnetic field can be determined without applying a default applying method for discriminating polarities, such as a Barber pole structure.

Eini method of manufacturing in the 2A and 2 B shown magnetic sensor 1 is described below.

<First Production of the substrate>

The substrate 2 becomes with the main surface 200 produced. A silicon wafer can be used as a substrate. When a silicon wafer is used, the elements become 10 and the like on the silicon wafer, followed by dicing the silicon wafer. Note that the silicon wafer may be singulated in advance and then used as a substrate.

<2nd Forming the bridge circuit 5 >

The power connection Vcc, the ground connection GND and four elements 10 be on the main surface 200 of the substrate 2 is formed, and then the elements are wired as provided to the terminal Vcc or GND, whereby the bridge circuit 5 is formed. The power terminal Vcc, the ground terminal GND, and the wiring are formed of metal films, and may be formed by a known deposition method (plating, CVD, PVD, and the like).

The solid layer and the free layer of the element 10 can by the well-known Deposition methods are formed, but preferably in particular by sputtering. The sputtering can form extremely uniform films with small errors, and thus can reduce the difference in thickness among the elements formed on the same substrate. In the elements connected to the power connection Vcc 1-1 and 2-1 Both the solid layers or the free layers (preferably the solid layers and the free layers) are deposited simultaneously. In this way, the difference in thickness between those in the elements 1-1 and 2-1 contained layers expresses small (for example, with a difference in thickness of 1.0% or less). Likewise, in the elements connected to the ground terminal GND 1-2 and 2-2 the solid or the free layers (preferably the solid layers and the free layers) deposited simultaneously In this way, the difference in thickness between those in the elements 1-2 and 2-2 contained layers expresses small (for example, with a difference in thickness of 1.0% or less). For all elements 1-1 . 1-2 . 2-1 and 2-2 For example, the solid layers or the free layers (preferably the solid layers and the free layers) may be deposited simultaneously.

<3rd Formation of the default coil 3 >

The default coil 3 is about the elements 10 educated. The first default submission part 310 and the second default submission part 320 the default coil 3 are preferably deposited simultaneously. In this way, the difference in thickness between the first default apply part 310 and the second default application part 320 expresses small (for example, with a difference in thickness of 1.0% or less). The default coil is formed of a metal film, and can be formed by a known deposition method (plating, CVD, PVD, and the like). In particular, sputtering or a combined sputtering and plating process may be used for deposition. Sputtering or the combined sputtering and plating process can form a uniform film with extremely small error. Thus, the magnetic field strength of the default magnetic field, with that under the first default impingement portion 310 arranged first area 11 (where the elements 1-1 and 1-2 are arranged), that of the default magnetic field, with that under the second default-applying part 320 arranged second area 12 (where the elements 2-1 and 2-2 are arranged) are equated, be equated.

<Separation of the magnetic sensor 1 >

The silicon wafer is isolated to the magnetic sensors 1 each producing the silicon substrate 2 having. Note that, for example, the silicon wafer may be singulated prior to forming the default coil. When dividing the silicon wafer, a part (first substrate) may be connected to the first area 11 where the elements 1-1 and 1-2 and a second part (second substrate) with the second area 12 where the elements 2-1 and 2-2 are arranged to be separated independently. In this case, the first substrate and the second substrate are formed at any position of the same wafer, so that the elements can be simultaneously formed on these substrates, thereby reducing the difference in thickness between the elements.

As described above, the magnetic sensor is 1 According to the first embodiment, less sensitive to variation factors accompanying a change in temperature and the magnetic interference field, and can allow downsizing and a reduction in the total weight, thereby making it possible to detect a large current with high accuracy.

 Second Embodiment

The magnetic sensor 1 according to the second embodiment will be described in more detail below. Parts other than those of the first embodiment will be described below, and a description of the same parts as those of the first embodiment will be omitted below.

In the first embodiment, the default magnetic field direction is 42 in the second area 12 opposite to the default magnetic field direction 41 in the first area 11 while in the second embodiment, the default magnetic field direction in the second region 12 it is the same as the default magnetic field direction in the first region 11 , The second embodiment deviates from the first embodiment in this point.

11 is a schematic circuit diagram of a magnetic sensor 1 according to the second embodiment; and 12 is a diagram showing an element arrangement of the magnetic sensor 1 in the second embodiment. As in 12 1, the default magnetic field direction is the Y direction, while the magnetosensitive direction is the X direction or the X direction. 11 schematically shows only the bridge circuit 5 including the elements 1-1 and 1-2 in the first area 11 and the elements 2-1 and 2-2 in the second area 12 and the default magnetic field directions 41 and 42 , In contrast, shows 12 furthermore, for the production of the in 11 shown default magnetic field provided default coil 3 , in addition to the elements 1-1 . 1-2 . 2-1 and 2-2 , Here is how in 12 shown the default coil 3 with vertical distance from the two elements 1-1 and 1-2 and the two elements 2-1 and 2-2 arranged, but so that they are in supervision with the two elements 1-1 and 1-2 and the two elements 2-1 and 2-2 overlaps. The default coil 3 impinges on the elements 1-1 . 1-2 . 2-1 and 2-2 with default magnetic fields.

As in 11 shown are the default magnetic field directions 41 and 42 perpendicular to the magnetosensitive directions 31 . 32 . 33 and 34 of the elements 1-1 . 1-2 . 2-1 and 2-2 (If the element has a solid layer, the magnetization direction of the solid layer is the magnetosensitive direction; the same applies to the present description.) Further, the direction 41 of the default magnetic field, with which the first range 11 is applied, the same as the direction 42 of the default magnetic field with which the second region 12 is charged. In 11 are both directions, the 41 of the first area 11 impinging magnetic field and the direction 42 of the second area 12 impinging default magnetic field, aligned to the left, but these directions 41 and 42 are not limited to this and may also be oriented to the right.

In this way, the magnetic field direction of the first area 11 applied to the default magnetic field the same as that of the second area 12 biasing magnetic field, whereby a change in the output due to magnetic interference fields in the direction perpendicular to the magnetically sensitive axis is significantly reduced.

To the default magnetic fields 41 and 42 as in 11 For example, two default coils, that is, a first default coil, may be used 3-1 and a second default coil 3-2 in the magnetic sensor 1 of the second embodiment, as in 12 shown to cause the current to flow in the respective correct direction, whereby the default magnetic fields are applied. Regarding 12 is both the first default coil 3-1 as well as the second default coil 3-2 in ring form over the main surface of the substrate 2 educated. As in 12 is a first linear part 21 (corresponding to the default applying part of the present invention) in a part of the first default coil 3-1 educated. In the imposition part of the first default coil 3-1 the current only needs to flow in order to comply with the default magnetic field 41 z apply, but a bypass part of the default coil is not on the in 12 shown limited. Furthermore, as in 12 shown the second default coil 3-2 designed to cause the flow of current such that with the default magnetic field 42 is applied, as well as the first default coil 3-1 , A second linear part 22 the second default coil 3-2 corresponds to the default imparting part of the present invention. The first linear part 21 the first default coil 3-1 takes care of those in the first area 11 arranged elements 1-1 and 1-2 with the default magnetic field. The second linear part 22 the second default coil 3-2 affects those in the second area 12 arranged elements 2-1 and 2-2 with the default magnetic field. The direction of the default magnetic field 41 of the first linear part 21 the first default coil 3-1 is perpendicular to the magnetization directions 31 and 32 solid layers in the elements 1-1 and 1-2 , and is in the supervision of the substrate 2 directed to the left. The direction of the default magnetic field 42 of the second linear part 22 the second default coil 3-2 is perpendicular to the magnetization directions 33 and 34 solid layers in the elements 2-1 and 2-2 , and is in the supervision of the substrate 2 directed to the left. Thus, in the magnetic sensor 1 According to the second embodiment, the default magnetic field for the first area 11 In the same direction, we orient the default magnetic field for the second region 12 , In the above description, two default coils are used to set the default magnetic field for the first range 11 and the default magnetic field for the second region 12 to orient in the same direction. Alternatively, a default coil may be formed laterally in an 8-shape. An upper linear part of the 8-shape (which corresponds to the left-side linear part when the 8-shape is put on the left side) is adapted to the first area 11 to apply the default magnetic field. A lower linear part of the 8-shape (which corresponds to the right-side linear part when the 8-shape is put on the left side) is adapted to the second area 12 to apply the default magnetic field. In this way, even if only one default coil is used, the default magnetic field for the first region 11 in the same direction as the default magnetic field for the second region 12 , The use of the two default coils will be described below.

As mentioned above, in the magnetic sensor 1 according to the second embodiment of the present invention, the default magnetic fields such that the elements 1-1 . 1-2 . 2-1 and 2-2 perpendicular to the magnetization direction of the fixed layer with the default magnetic fields are applied. To achieve this, the first linear part is 21 the first default coil 3-1 on the first area 11 arranged while the second linear part 22 the second default coil 3-2 on the second area 12 is arranged. As mentioned above, by applying the elements 1-1 . 1-2 . 2-1 and 2-2 In the direction perpendicular to the respective magnetization direction of the fixed layer, the hysteresis error due to a soft magnetic part of the element is reduced, and related thereto, a working range of the measuring magnetic field element can be spanned widest, thereby the symmetry of the output with respect to positive and negative Maintaining magnetic fields.

The use of the default coil 3 for applying the default magnetic field may eliminate the need for an external magnet to be applied with a default magnetic field, thereby maintaining the performance of the magnetic sensor under high temperature conditions. The two half bridges and the default coil 3 are made over the same substrate 2 , which can reduce the number of parts.

The magnetic sensor 1 According to the second embodiment, it is less sensitive to variation factors associated with a change in temperature and the magnetic interference field, and can enable downsizing and total weight reduction, thereby making it possible to detect current in a wide range, including a large current, and with high accuracy.

13A and 13B are graphs obtained by measuring changes in the differential output when there is a magnetic noise field in the magnetic sensor 1 changes according to the second embodiment of the present invention, wherein 13A the component parallel to the magnetosensitive direction is referred to as the X-direction component, while 13B the component parallel to the direction of the default magnetic field is referred to as the Y-direction component. Here are in the 13A and 13B those in the two elements connected to the power connector (Vcc) when used 1-1 and 2-1 solid layers formed at the same time, and those in these elements 1-1 and 2-1 When used, free layers are formed simultaneously. Further, the elements connected in the two when used with the ground terminal (GND) 1-2 and 2-2 formed solid layers formed simultaneously, and those in these elements 1-2 and 2-2 When used, free layers are formed simultaneously. As in 13A As shown, the measured values do not change even if the magnetic interference field varies from the X direction (the magnetically sensitive axis), whereby the highly accurate measurement can be achieved. As in 13B shown, the output is not affected by a magnetic interference field in the Y direction.

As described above, in the magnetic sensor 1 according to the second embodiment, as in 12 shown the direction 41 of the first area 11 impinging default magnetic field the same as the direction 42 of the second area 12 biasing magnetic field, whereby a change in the output due to the magnetic interference field in the direction (Y direction) perpendicular to the magnetic sensitive axis is significantly reduced.

 Third Embodiment

The magnetic sensor 1 according to the third embodiment will be described in more detail below. Again, parts different from those of the first and second embodiments will be described, and a description of the parts which are the same as in the first and second embodiments will be omitted below.

The second embodiment does not include a feedback coil 57 whereas the third embodiment has a feedback coil 57 includes. The third embodiment differs from the second embodiment in this point.

14 is a schematic circuit diagram of the magnetic sensor 1 according to the third embodiment. As in 14 shown, includes the magnetic sensor 1 according to the third embodiment also feedback coils 57 which provide the balance between the differential outputs of the two half bridges with respect to the two half bridges applied to the default magnetic field. Here, in the third embodiment, a feedback coil 57 in the first area 11 arranged, and another feedback coil 57 is in the second area 12 arranged. More precisely, as in 18 shown in the first area 11 the feedback coil 57 vertically from the default coil 3-1 spaced and with respect to these on the opposite side of the elements 1-1 and 1-2 arranged. The feedback coil 57 is overlapping in the supervision with the two elements 1-1 and 1-2 and the default coil 3-1 arranged. Likewise, in the second area 12 the feedback coil 57 vertically from the default coil 3-2 spaced and with respect to these on the opposite side of the elements 2-1 and 2-2 arranged. The feedback coil 57 is overlapping in the supervision with the two elements 2-1 and 2-2 and the default coil 3-2 arranged. That way are the feedback coils 57 in the first area 11 and in the second area 12 arranged, thereby allowing the linearity of the output from the bridge circuit 5 increase, which allows a highly accurate measurement. Thus, the magnetic sensor 1 according to the third embodiment, the measurement because of the high linearity of the output with high accuracy, and therefore can perform the control and the management of the current and a device with a driving part with high accuracy. As described above, the third embodiment can provide a magnetic sensor that can easily measure the amount of current, showing a high linearity of the output of the bridge circuit.

 Fourth Embodiment

The magnetic sensor 1 according to the fourth embodiment will be described in more detail below. Again, parts that are different from those of the first to third embodiments will be described below, and a description of parts that are the same as in the first to third embodiments will be omitted below.

In the first to third embodiments, the magnetization directions are 31 and 32 the solid layers of the first area 11 and in the second area 12 formed two elements 1-1 and 1-2 opposite to each other. Further, the directions 41 and 42 the the elements 1-1 and 2-1 default magnetic fields act on the same as the directions 41 and 42 the the elements 1-2 and 2-2 impinging default magnetic fields. On the other hand, in the fourth embodiment, the magnetization directions 31 . 32 . 33 and 34 the solid layers in the two elements 1-1 and 1-2 in the first area 11 and in the two elements 2-1 and 2-2 in the second area 12 the same. Further, the directions 41 and 42 the the elements 1-1 and 2-1 impinging default magnetic fields opposite to the directions 43 and 44 the the elements 1-2 and 2-2 impinging default magnetic fields. In these points, the fourth embodiment differs from the first to third embodiments.

15 is a schematic circuit diagram of the magnetic sensor 1 according to the fourth embodiment. As in 15 shown are two elements 1-1 and 1-2 and two elements 2-1 and 2-2 in the first area 11 or in the second area 12 arranged. Both the first area 11 as well as the second area 12 need only contain at least one element. One in the first area 11 arranged element and another in the second area 12 arranged element can act as a magnetic sensor. When an element is arranged in each of the regions, the element becomes 1-1 and the element 2-1 for example, connected in parallel with the power connector (Vcc) and the ground terminal (GND).

Now a description will be given in the first area 11 arranged two elements 1-1 and 1-2 or in the second area 12 arranged two elements 2-1 and 2-2 specified.

As in 15 are shown in the magnetic sensor 1 According to the fourth embodiment, the two elements in both the first and in the second region 11 connected in series to the half-bridge. In the first area 11 are the magnetization directions 31 and 32 the solid layers in the two elements 1-1 and 1-2 the same while in the second area 12 the magnetization directions 33 and 34 the solid layers in the two elements 2-1 and 2-2 they are the same. Further, the directions 41 and 42 the default magnetic fields, with those connected to the power connector (Vcc), in the first and second range 11 and 12 arranged elements 1-1 and 2-1 to be acted upon, contrary to the directions 43 and 44 the default magnetic fields, with those connected to the ground terminal (GND), in the first and second area 11 and 12 arranged elements 1-2 and 2-2 , Thus, by forming both half-bridges in the two regions in the same way, a large output depending on the size of the magnetic interference field can be effected.

In this way, because all magnetization directions 31 . 32 . 33 and 34 the fixed layers in the bridge circuit 5 forming elements 1-1 . 1-2 . 2-1 and 2-2 they are the same, the elements 1-1 . 1-2 . 2-1 and 2-2 be deposited simultaneously. Because the respective half-bridge configurations are also the same, the difference in the temperature characteristic of the zero point of the magnetic sensor can be significantly reduced. With this arrangement, the two elements connected to the power connector (Vcc) 1-1 and 2-1 Same specification, and the two connected to the ground terminal (GND) elements 1-2 and 2-2 have the same specification. Thus, the change in the performance of the magnetic sensor due to the magnetic interference field from the direction of the magnetically sensitive axis can be significantly reduced.

In the magnetic sensor 1 According to the fourth embodiment, although the element arrangement is not shown, default coils are arranged such that the elements 1-1 . 1-2 . 2-1 and 2-2 impinging default magnetic fields perpendicular to the magnetization directions of the fixed layers of the elements 1-1 . 1-2 . 2-1 and 2-2 are directed. That is, a first default coil, a second default coil, a third default coil, and a fourth default coil are used. A first linear part of the first default coil acts on the first region 11 arranged element 1-1 with the default magnetic field. A second linear part of the second setpoint coil acts on this in the second area 12 disposed element 2-1 , Furthermore, a first linear part of the third default coil acts on that in the first region 11 arranged element 1-2 with the default magnetic field. A second linear part of the fourth feed coil acts on this in the second region 12 arranged element 2-2 with the default magnetic field. By applying the elements 1-1 . 1-2 . 2-1 and 2-2 with the default magnetic field in the direction perpendicular to the respective magnetization directions of the fixed layer, the hysteresis error by a soft magnetic part of the elements can be reduced, and at the same time, the operating range of the element for the measuring magnetic field can be widest extended, whereby the symmetry of the output with respect to positive and negative magnetic fields is maintained. The use of the default coil to apply the default magnetic field may avoid the need for an external magnet to be applied to the default magnetic field. Further, the two half-bridges and the default coil 3 over the same substrate 2 formed, whereby the number of parts can be reduced.

 Fifth Embodiment

The magnetic sensor 1 according to the fifth embodiment will be described in more detail below. Again, only parts different from those of the first to fourth embodiments will be described below, and the description of the same parts as in the first to fourth embodiments will be omitted.

 In the fourth embodiment, the elements are connected in a forward direction, whereas in the fifth embodiment, the elements are connected crosswise. In this point, the fifth embodiment is different from the fourth embodiment.

16 is a schematic circuit diagram of the magnetic sensor 1 according to the fifth embodiment. As in 16 5, in the fifth embodiment, the one connected to the power terminal (Vcc) is shown in the first area 11 arranged element 1-1 connected to the ground terminal (GND) in the second area 12 arranged element 2-2 connected. The element connected to the power connector (Vcc) located in the second area 2-1 is connected to the ground terminal (GND) in the first area 11 arranged element 1-2 connected. This link is hereinafter referred to as "cross-connected".

Furthermore, in the magnetic sensor 1 according to the fifth embodiment, the directions 41 and 42 the default magnetic fields with which the elements 1-1 and 2-1 be charged, the same as the directions 41 and 42 the default magnetic fields with which the elements 2-2 and 1-2 be charged.

In the fifth embodiment, all the magnetization directions of the fixed layers in the four elements 1-1 . 1-2 . 2-1 and 2-2 be placed equal. Because all directions of magnetization of the fixed layers in the four elements are set equal, the four elements can 1-1 . 1-2 . 2-1 and 2-2 are deposited at once, thereby minimizing differences in properties and thickness among the elements. Thus, the change of the zero point depending on the temperature and the effect of the magnetic interference field in the magnetic sensitive axis direction can be reduced.

The directions of the default magnetic fields with which the element 1-1 and the element 2-1 are applied equal to the directions of the default magnetic fields with which the element 2-2 and the element 1-2 are applied, whereby a change in the performance due to the magnetic interference field in the direction perpendicular to the magnetic sensitive axis direction is significantly reduced.

 In the fifth embodiment, the default magnetic fields are applied so that the default magnetic fields applied to the elements are perpendicular to the respective magnetization directions of the fixed layers. The default magnetic fields are applied in the same manner as in the second embodiment. By biasing the elements with the default magnetic fields in the direction perpendicular to the respective magnetization directions of the fixed layers, the hysteresis error due to a soft magnetic part of the element is reduced, and at the same time, the operating range of the element for the measuring magnetic field can be widest extended, whereby the symmetry of the output with respect to positive and negative magnetic fields. The use of the default coil to apply the default magnetic field may avoid the need for an external magnet to be applied to the default magnetic field. Further, the two half-bridges and the default coil are formed over the same substrate, whereby the number of parts can be reduced.

 Sixth Embodiment

The magnetic sensor 1 according to the sixth embodiment will be described in more detail below. Again, only parts different from those in the first to fifth embodiments will be described below, and FIGS Description of the same parts as in the first to fifth embodiments will be omitted.

In the first to fifth embodiments, the default coil has 3 For example, the linear part for applying the default magnetic field and other parts have the same line width. On the other hand, the default coil has 3 in the sixth embodiment, a linear part (default applying part 20 ) for applying the default magnetic field and another part (default coil bypass part 21 ), which have different line widths. The sixth embodiment differs in this point from the first to fifth embodiments.

17A is a schematic plan view of the magnetic sensor 1 according to the sixth embodiment, which shows the arrangement of the components of the magnetic sensor 1 shows, including the elements 1-1 . 1-2 . 2-1 and 2-2 , two pairs of default coils 3 , Cables 25 , and contacts 19 , 17B is a schematic plan view, only the substrate 2 and the elements 1-1 . 1-2 . 2-1 and 2-2 of the magnetic sensor 1 shows, and 17C is a schematic plan view, only the substrate 2 and a pair of default coils 3 shows. 17D FIG. 12 is a cross-sectional view taken along line 17D-17D of FIG 17C that the substrate 2 , the Elements 1-1 . 1-2 . 2-1 and 2-2 , and the default coil 3 shows. In the in 17D shown sixth embodiment, in addition to the configuration with reference to FIGS 11 and 12 described second embodiment, the default coil 3 formed such that the line width w2 of the default coil 3 in the default coil bypass part 21 is greater than the line width w1 of the default coil 3 in the default submission section 20 , As in 17C shown, assigns the default coil 3 the default submission part 20 and the default coil bypass part 21 on top of the default submission section 20 connected is. The default coil 3 has a substantially rectangular spiral shape formed by repeatedly bending a unidirectional pipe. An area where the line width of each line path is constant corresponds to the default application section 20 while a region other than the default imposition part 20 in which range the line widths gradually increase, the default coil bypass part 21 correspond. That means that, as in 17D shown, the line widths of the parts of the default coil 3 in the default submission section 20 all are the same, namely w1. On the other hand, the default coil bypass part increases in size 21 the line widths of the default coil 3 Gradually, the farther away from the elements 1-1 and 1-2 or the elements 2-1 and 2-2 , With this arrangement, by the energization of the default coil 3 caused heat generation are suppressed while suppressing variations in the output, whereby a reduction in the size of a chip is enabled.

As in 17B shown is the first area 11 near one end of the substrate 2 formed, and the elements 1-1 and 1-2 are in the first area 11 educated. The second area 12 is near the other end of the substrate 2 formed, and the elements 2-1 and 2-2 are in the second area 12 educated. As in 17D shown are the elements 1-1 . 1-2 . 2-1 and 2-2 on the substrate 2 formed, and the default coils 3 are above the elements 1-1 . 1-2 . 2-1 and 2-2 formed, thereby of the elements 1-1 . 1-2 . 2-1 and 2-2 spaced. Both the distance E between the elements 1-1 and 1-2 in the first area 11 as well as the distance F between the elements 2-1 and 2-2 in the second area 12 is 0.1 mm to 10 mm, preferably 1 mm to 5 mm, and most preferably about 1.2 mm. Here, center lines p and q of the arrangement areas (first area 11 and second area 12 Reference positions of the respective area (first area 11 and second area 12 ), and the distance K between both areas is the distance between the center lines p and q. Each of the elements 1-1 . 1-2 . 2-1 and 2-2 has a structure (ie, a meandering structure) obtained by repeatedly folding back a meandering line. The length T in the longitudinal direction of a part of each element 1-1 . 1-2 . 2-1 or 2-2 which is folded every time is 10 μm to 1000 μm, preferably 50 μm to 200 μm, and most preferably about 100 μm. In this way, the length T becomes in the longitudinal direction of each of the elements 1-1 . 1-2 . 2-1 and 2-2 which determines the difference in the magnetic field gradient in the first and second regions 11 and 12 avoids. Consequently, the elements can 1-1 . 1-2 . 2-1 and 2-2 be applied with a uniform magnetic field, whereby the measurement accuracy is increased. The default coil 3 acts on the default magnetic fields in the direction of magnetization of the solid layers in the elements 1-1 and 1-2 and the elements 2-1 and 2-2 in the two areas (first area 11 and second area 12 ) vertical direction, so that the default magnetic fields in the first and second area 11 and 12 are parallel to each other. The two default coils 3 are arranged and through the feeders 25 connected to apply the default magnetic fields in this way. As mentioned above, parts of the default coils are 3 above the elements 1-1 . 1-2 . 2-1 and 2-2 arranged, ie, the default impingement parts 20 are narrower to increase the generation efficiency of the default magnetic fields while other parts of the default coils 3 (Default coils bypass parts 21 ) are formed wider to reduce the resistance of the magnetic sensor as a whole. The default coil bypass part 21 extends inward in the lateral direction as compared to the elements 1-1 and 1-2 and the elements 2-1 and 2-2 so that the chip size in the longitudinal direction can be reduced. Further, the contacts 19 within the elements 1-1 and 1-2 and the elements 2-1 and 2-2 arranged, whereby the chip size can also be reduced.

 Seventh Embodiment

The magnetic sensor 1 according to the seventh embodiment will be described in more detail below. Again, only parts different from those of the first to sixth embodiments will be described below, and the description of the same parts as in the first to sixth embodiments will be omitted.

18A is a schematic plan view of the magnetic sensor 1 According to the seventh embodiment, the arrangement of the components of the magnetic sensor 1 shows, including the elements 1-1 . 1-2 . 2-1 and 2-2 , Feedback coils 57 , Default coils 3 , Feeders 25 , and contacts 19 , 18B is a schematic plan view, only the substrate 2 and the elements 1-1 . 1-2 . 2-1 and 2-2 of the magnetic sensor 1 shows, 18C is a schematic plan view, only the substrate 2 and the feedback coils 57 shows, and 18D is a schematic plan view, only the substrate 2 and the default coils 3 shows. The sixth embodiment has no feedback coil 57 while the seventh embodiment is a feedback coil 57 having. In this point, the seventh embodiment is different from the sixth embodiment. As in 18D shown, assigns the default coil 3 the default submission part 20 and the default coil bypass part 21 on. The cross-sectional area of the wiring 26 containing the default coil bypass parts 21 is greater than that of the default imposition part 20 , The cross-sectional area of the wiring 26 containing the default coil bypass parts 21 is preferably more than once greater than that of the default imposition part 20 , The larger the cross-sectional area of the wiring 26 The better the state of the default coil. On the other hand, the cross-sectional area of the wiring 26 by the size of the magnetic sensor 1 limited. Such a setting reduces the heat generation in the default coils 3 that otherwise the elements 1-1 . 1-2 . 2-1 and 2-2 influence, which leads to an improvement of the measurement accuracy. 18B shows two areas (the first area 11 and the second area 12 ). The area-to-area distance K and the length T in the longitudinal direction of the element are set in the same manner as in FIG 17 , whereby the difference in magnetic field gradient in each of the first and second regions 11 and 12 is avoided. Consequently, the elements become 1-1 . 1-2 . 2-1 and 2-2 applied with a uniform magnetic field, whereby the measurement accuracy is improved.

In the magnetic sensor 1 According to the seventh embodiment, the default coils act on 3 the default magnetic fields in the direction of magnetization of the solid layers in the elements 1-1 and 1-2 and the elements 2-1 and 2-2 in two areas (first area 11 and second area 12 ) vertical direction such that the default magnetic fields in the two areas are parallel to each other. The two default coils 3 are each arranged and connected via the feeders to apply the default magnetic fields in this way. In the above the elements 1-1 . 1-2 . 2-1 and 2-2 located parts of the default coil 3 ie in the default submission parts 20 , the line width is set narrow to increase the generation efficiency of the default magnetic field, while the line width in other parts of the default coils 3 (For example, the default coil bypass parts 21 ) is set wide to reduce the resistance of the magnetic sensor as a whole. As in 18 Shown are the default coil bypass parts 21 not within the elements 1-1 . 1-2 . 2-1 and 2-2 arranged. Alternatively, the default coil bypass parts 21 , as in 17 shown within the elements 1-1 . 1-2 . 2-1 and 2-2 arranged, whereby the chip size can be reduced.

In the seventh embodiment of the present invention, as in 18C shown the feedback coils 57 parallel to the longitudinal direction of the elements 1-1 . 1-2 . 2-1 and 2-2 in the two areas (first area 11 and second area 12 ) arranged. Furthermore, the two default coils 3 arranged and connected to the feeders that bias the default magnetic fields so that 180 ° rotational symmetry between the two areas is achieved. As with the default coil 3 is in above the elements 1-1 . 1-2 . 2-1 and 2-2 located parts of the feedback coil 57 the line width narrow and constant set to increase the generating efficiency of the default magnetic fields, while in other parts of the feedback coil 57 the line width is set wide to reduce the resistance of the magnetic sensor as a whole. In particular, as in 18C shown the feedback coil 57 in a substantially rectangular spiral shape by repeatedly bending a unidirectionally extending duct. Each conduction path has an area 51 with constant line width and one of the range 51 different area 52 on, in which the line width increases gradually. The area 52 in which the line width of each line path gradually increases is within the corresponding elements 1-1 . 1-2 . 2-1 respectively. 2-2 arranged, whereby the chip size can be reduced. The contacts 19 are also within the elements 1-1 and 1-2 and the elements 2-1 and 2-2 arranged, whereby the chip size can be reduced in the same way.

The 19A to 19C are layer views of the magnetic sensors of the first to seventh embodiments. The in 19A shown magnetic sensor has a on the substrate 2 arranged element 10 and two feedback coils and a default coil 3 on. The in the 19B and 19C shown magnetic sensors have that on the substrate 2 arranged element 10 as well as two default coils 3 and a feedback coil. The in 19B shown magnetic sensor has a soft magnetic yoke film, while in 19C shown magnetic sensor does not have a soft magnetic yoke film. The element 10 and each coil are insulated from each other by an insulating film. Note that each of the 19A . 19B and 19C an example of the sequence of laminations of the films in the magnetic sensor shows. However, the sequence of lamination of the films can be modified. Alternatively, one or some of the films may be omitted, or another film may be included in the 19A to 19C be added structure shown.

 [Current detector]

Now, a current detector will be described which includes the above-mentioned magnetic sensor 1 used. The magnetic sensor used in the current detector according to each of the eighth to seventeenth embodiments 1 is the same as the magnetic sensor 1 in any one of the first to seventh embodiments, and thus a more detailed description of the magnetic sensor 1 omitted. The associated with the eighth to seventeenth embodiment 20 to 30 show X, Y and Z axes. Note that these X, Y and Z axes are not identical to those in the 1 to 19 shown X, Y or Z axes are.

 (Eighth Embodiment)

The current detector according to the eighth embodiment will be described in more detail below. 20A is a schematic perspective view of the current detector 60 in the eighth embodiment. 20B FIG. 12 is a cross-sectional view taken along line 20B-20B of FIG 20A , 20C is a schematic perspective view of the current detector 60 with one with a resin molding 64 covered power line 61 , 20D FIG. 12 is a cross-sectional view taken along line 20D-20D of FIG 20C , 20E is a schematic view of the in which in the 20A to 20D shown current detector 60 used magnetic sensor 1 , In the 20A to 20E The X direction is the direction as the direction of current flow through the power line 61 Are defined. Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 existing elements 10 is the Y direction or the -Y direction, and the direction of the default magnetic field is the X direction. As in 20B shown, points the current detector 60 According to the eighth embodiment, the magnetic sensor 1 according to any of the first to seventh embodiments, and the power line 61 on. The power line 61 is formed so that it has three peripheral surfaces of the magnetic sensor 1 in a cross-section (XZ-plane) along the direction (X-direction) of the current flow through the power line 61 embraces. In other words, the magnetic sensor 1 is within one in the power line 61 arranged bypass part 62 arranged. That is, when the magnetic sensor 1 on a first vertical part 72 and a second vertical part 74 in the bypass part 62 is projected, is the magnetic sensor 1 arranged so that its projected position with the first vertical part 72 and the second vertical part 74 overlaps. Further, when the magnetic sensor 1 on a second parallel part 73 of the bypass part 62 is projected, is the magnetic sensor 1 also arranged so that its projected position with the second parallel part 73 overlaps.

As in 20B shown has the current detector 60 According to the eighth embodiment, a bypass part 62 in U-shape (inverted U-shape with edges), in cross-section (XZ-plane) along the direction (X-direction) of the current flow through the power line 61 , That is, the cross section has a first parallel part 71 , the first vertical part 72 , the second parallel part 73 , the second vertical part 74 and the third parallel part 75 , The first parallel part 71 is parallel to the X direction. The first vertical part 72 is on the downstream side of the first parallel part 71 and vertically in relation to the first parallel part 71 arranged. The second parallel part 73 is on the downstream side of the first vertical part 72 , vertical to the first vertical part 72 , and parallel to the first parallel part 71 arranged. The second vertical part 74 is on the downstream side of the second parallel part 73 and vertical with respect to the second parallel part 73 arranged. The third parallel part 75 is on the downstream side of the second vertical part 74 , vertical to the second vertical part 74 , and parallel to the first and second parallel parts 71 and 73 arranged.

In the current detector 60 According to the eighth embodiment, as in 20E shown in the magnetic sensor 1 existing elements 1-1 . 1-2 . 2-1 and 2-2 arranged such that the magnetization directions 31 . 32 . 33 and 34 the respective solid layers perpendicular to the direction of current flow through the power line 61 (X direction in the 20A . 20B . 20C and 20D ) lie. Further, the elements 1-1 . 1-2 . 2-1 and 2-2 arranged parallel to the X direction.

The power line 61 through which the current to be measured flows is formed of metal or a low resistivity alloy such as copper. The power line 61 is formed in a plate-shaped configuration, such as copper foil or one integral with the board 63 formed press plate.

In the current detector 60 According to the eighth embodiment, the magnetization direction of the fixed layer in the magnetic sensor 1 perpendicular to the direction of current flow. The magnetic sensor 1 and the power line 61 are on the board 63 or a housing attached.

As in 20B shown is one (for example, the first area 11 ) in the magnetic sensor 1 existing areas disposed on a side surface of the U, ie at a position A relatively close to the first vertical part 72 the power line 61 , The other one (for example, the second area 12 ) of the two areas is close to the center position B of the second parallel part 73 the power line 61 arranged. In this case, the two regions (ie, the first region and the second region) have a magnetic field gradient. Thus, by disposing the magnetic sensor 1 of the above-described first to seventh embodiments, an output in proportion to the current to be measured can be obtained, and the magnetic noise can be compensated. Induction noise, such as switching noise, can be suppressed because the magnetic sensor is disconnected from the power line 61 is surrounded.

As in the 20C and 20D shown, the magnetic sensor 1 and the power line 61 wholly or partly with the resin molding 64 and the like. In this way, the magnetic sensor 1 and the power line 61 all or part of the resin molding 64 which improves the practicability of the attachment while allowing a difference in positional accuracy to be reduced. Note that in terms of 20D the gap between the magnetic sensor 1 and the bypass part with the resin molded body 64 can be completed.

 Ninth Embodiment

The current detector 60 according to the ninth embodiment will be described in more detail below. Again, only parts different from those of the eighth embodiment will be described, and the description of the same parts as in the eighth embodiment will be omitted.

 In the eighth embodiment, the power line is bent in a U-shape without being branched or split, while the power line is branched and divided in the ninth embodiment. The ninth embodiment differs from the eighth embodiment in this point.

21A is a schematic perspective view of the current detector 60 in the ninth embodiment. 21B is a cross-sectional view taken along the line 21B-21B of 21A , 21C is a partially enlarged cross-sectional view of 21B , 21D is a schematic perspective view of the current detector 60 with one with a resin molding 64 covered power line 61 , 21E FIG. 12 is a cross-sectional view taken along line 21E-21E showing a cross section along the direction of current flow (X direction) through the power line. FIG 61 , 21F is a schematic view of the in which in the 21A to 21C shown current detector 60 used magnetic sensor 1 , In the 21A to 21F is the X direction as the direction of current flow through the power line 61 Are defined. Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 existing elements 10 is the Y direction or the -Y direction, and the direction of the default magnetic field is the X direction.

As in 21B shown, points the current detector 60 according to the ninth embodiment in its cross section (XZ plane) along the direction of current flow through the power line 61 following: a white space 83 between a branching position 81 and a merge position 82 ; the power line 61 with a first current path 84 and a second current path 85 passing through the white space 83 are separated from each other; and the magnetic sensor 1 according to any of the first to seventh embodiments.

In the current detector 60 the ninth embodiment far the power line 61 , as in 21B shown the first rung 84 and the second current path 85 on. The first rung 84 indicates the cross-section (XZ-plane) along the direction (X-direction) of the current flow through the power line 61 formed in U-shape bypass part 62 on (ie in inverted U-shape with edges). The starting point and the end point of the first rung 84 are with the second rung 85 connected. As in 21B shown points the first rung 84 a first parallel part 71 , the first vertical part 72 , the second parallel part 73 , a second vertical part 74 and a third parallel part 75 on. The first parallel part 71 is parallel to the X direction. The first vertical part 72 is on the downstream side of the first parallel part 71 and vertical with respect to the first parallel part 71 arranged. The second parallel part 73 is at the downstream side of the first vertical part 72 , vertical to the first vertical part 72 , and parallel to the first parallel part 71 arranged. The second vertical part 74 is on the downstream side of the second parallel part 73 and vertical with respect to the second parallel part 73 arranged. The third parallel part 75 is on the downstream side of the second vertical part 74 , vertical to the second vertical part 74 , and parallel to the first and second parallel parts 71 and 73 arranged.

The second current path 85 has a linear part 76 , one of the linear part 76 branching branch part 77 and one with the linear part 76 merging merge part 78 on.

The first parallel part 71 of the first current path 84 is electrical with the branch part 77 of the second current path 85 connected. The third parallel part 75 of the first current path 84 is electric with the merging part 78 of the second current path 85 connected. Thus, the first rung 84 and the second rung 85 together to the power line 61 connected. Here corresponds to the point at which the second current path 85 in the linear part 76 and the branch part 77 branches, the "branch position" 81 , The place where the linear part 76 and the merging part 78 in the second current path 85 uniting together corresponds to the "merge position" 82 , The part of the first rung 84 and the second current path 85 is enclosed corresponds to the "white space" 83 ,

In the current detector 60 According to the ninth embodiment, the first power line 84 through which the current to be measured flows, from a metal or alloy with a low resistivity such as copper. The first power line 84 is configured in plate-like structure, such as copper foil or press plate, which is integral to the board 63 is formed. The current to be measured through the power line 61 flows (another part than the bypass part 62 ) flows vertically relative to the first vertical part 72 , The magnetic sensor 1 is within the above-mentioned void 83 arranged. The second current path 85 is arranged so that the current therein is parallel to the current direction in the first current path 84 flows. The second current path 85 is arranged so that both current paths overlap in the supervision. The power line 61 including the first and second current paths 84 and 85 indicates the branch position 81 and the merging position 82 on. The through the second current path 85 flowing current is parallel to that through the first parallel part 71 , the second parallel part 73 and the third parallel part 75 the flat first rung 84 , The magnetization directions 31 . 32 . 33 and 34 the solid layers in the magnetic sensor 1 are perpendicular to the direction of flow through the first vertical part 72 (Z direction in 21B . 21C and 21E ) flowing current.

The magnetic sensor 1 is in between the first rung 84 and the second current path 85 arranged white space 83 arranged. Thus, even if a large current is measured, the induced magnetic field can be attenuated, thereby improving the measurement accuracy without saturating the elements. The magnetic sensor 1 and the power line 61 are on the board 63 or a housing attached. As in 21B shown is one (for example, the first area 11 ) of the two in the magnetic sensor 1 existing areas on a side surface of the US, ie at the position A relatively close to the first vertical part 72 of the first current path 84 arranged. The other (for example, the second area 12 ) of the two areas is near a center position B of the second parallel part 73 of the first current path 84 arranged. The magnetic sensor 1 is arranged in this way, whereby as in 21C that the magnetic field near the position A becomes higher rearward in the direction perpendicular to the paper plane, and the magnetic field near the position B becomes higher forward in the direction perpendicular to the paper plane.

The two areas (ie the first area 11 and the second area 12 ) have a gradient of the magnetic field induced by the current to be measured. Thus, by forming the magnetic sensor 1 In any of the first to seventh embodiments described above, an output proportional to the current to be measured can be obtained while the magnetic interference field can be simultaneously compensated. Induction noise, such as switching noise, can be suppressed because the magnetic sensor from the power line 61 is enclosed.

As in 21D and 21E shown, the magnetic sensor 1 and the power line 61 wholly or partly with the resin molding 64 and the like. In this way, the magnetic sensor 1 and the power line 61 with each other through the resin molding 64 which improves the practicability of the attachment while allowing a difference in positional accuracy to be reduced. Note that, in terms of 21E , the gap between the magnetic sensor 1 and the bypass part with the resin molded body 64 can be completed.

 Tenth Embodiment

The current detector 60 According to the tenth embodiment will be described in more detail below. Again, only portions of those of the ninth embodiment will be described below, and a description will be given below the same parts as in the ninth embodiment will be omitted.

22A is a schematic perspective view of the current detector 60 the tenth embodiment. 22B FIG. 12 is a cross-sectional view taken along line 22B-22B of FIG 22A , 22C is a schematic plan view of the current detector 60 in the tenth embodiment. 22D is a schematic view of the in which in the 22A to 22C shown current detector 60 used magnetic sensor 1 , In the 22A to 22D is the X direction as the direction of the through the power line 61 defined flowing current. Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 existing elements 10 is the X direction or the -X direction, and the direction of the default magnetic field is the Y direction.

In the ninth embodiment, the second current path 85 the power line 61 no second branch / merge part (second blank space), whereas in the tenth embodiment, the second current path 85 the power line 61 a second branch / merge part (second void 95 ) having. In the ninth embodiment, the power line 61 only the white space 83 whereas in the tenth embodiment, the power line 61 not just the white space 83 but also the white space 95 having. The tenth embodiment differs from the ninth embodiment in this point. In the current detector 60 The tenth embodiment has the power line 61 as in the 22A to 22C shown the first rung 84 with the bent in U-shape bypass part 62 and the second current path 85 on, to the start and end points of the first rung 84 are connected and which a second white space 95 has trained in it. The magnetic sensor 1 has at least three surfaces between the first current path 84 and the second current path 85 on, by the current paths (for example, the first current path 84 ) are covered.

The first rung 84 and the second rung 85 through which the current to be measured flows are formed of metal or a low resistivity alloy such as copper. These current paths are configured as a plate-shaped structure, such as a copper foil or press plate, which is integral to the board 63 is formed. The current to be measured flows through the power line 61 (a part other than the branch part 62 ) vertically relative to the first vertical part 72 , The magnetic sensor 1 is within the above-mentioned void 83 arranged. The second current path 85 is arranged so that the current therein is parallel to the current direction in the first current path 84 flows. The second current path 85 is arranged so that both current paths overlap in the supervision. The power line 61 has first and second current paths 84 and 85 with a branch position 81 and a merge position 82 on. The through the second current path 85 flowing current is parallel to that through the first parallel part 71 , the second parallel part 73 and the third parallel part 75 the flat first rung 84 flowing electricity.

The second current path 85 has the second space 95 on. The second white space 95 includes pages 100 and 101 , which are vertical to the direction (X direction) of the current flow through the second current path 85 are. The vertical side 100 is located at the downstream side, while the vertical side 101 is arranged at the upstream side in the current direction. In the tenth embodiment, the second empty space 95 the vertically oriented to the current direction and in the flow direction (X direction) downwardly and upwardly arranged sides 100 and 101 on. Alternatively, the second space is needed 95 to be equipped with only two sides. The second current path 85 has the second space 95 on. The second white space 95 has pages 100 and 101 , which are vertical to the direction of current flow through the second current path 85 are. Thus, the second current path experiences 85 as in 22C shown two flow directions (by the reference numerals 96 and 97 designated directions) which are 180 ° rotationally symmetric to the central axis of the second void 95 as the center. The through the two current directions 96 and 97 induced magnetic fields are perpendicular to the respective currents and antiparallel to each other.

The magnetic sensor 1 is arranged so that the center in the direction of magnetization 31 . 32 . 33 and 34 the solid layer vertical direction (Y direction) with the center in a branch position range (ie the center of the side of the second white space 95 ) is aligned. Thus, the magnetization directions are 31 . 32 . 33 and 34 the solid layers in the magnetic sensor 1 perpendicular to the direction 96 or 97 (Y-direction or -Y-direction) of the current, so that the induced magnetic direction respectively parallel / anti-parallel to the magnetization direction of the solid layers in the two areas of the magnetic sensor 1 are.

As in the 22A . 22C and 22D is the length G of the second space 95 in the mainstream 110 perpendicular direction (Y direction) equal to or greater than the length H between the magnetoresistive effect elements in the magnetization directions of the solid layers in the magnetic sensor 1 vertical direction. That's why the two areas 11 and 12 in the magnetic sensor 1 received induced magnetic fields uniform direction and strength.

The magnetic sensor 1 is between the first rung 84 and the second current path 85 arranged. With this arrangement, even if a large current is measured, that of the first and second current paths 84 and 85 flowing magnetic fields are attenuated, whereby the measurement accuracy is improved without saturating the elements. The magnetic sensor 1 and the power line 61 are on the board 63 or a housing attached. As in 22C shown is one of the two in the magnetic sensor 1 existing areas (for example, the first area 11 ) at the left side position C with respect to the flow direction (X direction), while the other region (for example, the second region 12 ) is disposed at the right-side position D. In this case, each of the two areas (ie the first area 11 and the second area 12 ) a gradient of the magnetic field induced by the current to be measured. Thus, by arranging the elements 1-1 . 1-2 . 2-1 and 2-2 In any of the first to seventh embodiments described above, an output proportional to the current to be measured can be obtained while the magnetic noise can be simultaneously compensated. Induction noise, such as switching noise, can be suppressed because the magnetic sensor from the power line 61 is enclosed.

The magnetic sensor 1 and the power line 61 may be wholly or partially integrated with the resin molding or the like. In this way, the magnetic sensor 1 and the power line 61 with each other through the resin molded body 64 which improves the practicability of the attachment while allowing a difference in positioning accuracy to be reduced. This can be done without the first rung 84 , the magnetic interference field can be compensated.

 Eleventh Embodiment

The current detector 60 According to the eleventh embodiment will be described in more detail below. Again, only parts of those of the tenth embodiment will be described below, and a description of the same parts as in the tenth embodiment will be omitted.

In the ninth embodiment, far the second current path 85 no branch part 86 on while the second current path 85 in the eleventh embodiment, a branch part 86 having. The eleventh embodiment differs from the ninth embodiment in this point.

23A is a schematic perspective view of the current detector 60 the eleventh embodiment. 23B is a cross-sectional view taken along the line 23B-23B of 23A , 23C is a top view of the current detector 60 in the eleventh embodiment. 23D is a schematic view of the in which in the 23A to 23C used current detector 60 used magnetic sensor 1 , In the 23A to 23D is the X direction as the direction of the through the power line 61 defined flowing current. Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 existing elements 10 is the Y direction or the -Y direction, and the direction of the default magnetic field is the X direction. As in the 23A and 23B shown points at the current detector 60 the eleventh embodiment, the power line 61 following: a first rung 84 with a U-shaped bent part 62 ; and a second current path 85 with a linear part 76 and a merge part 79 , The merging part 79 is on the upstream side of the linear part 76 arranged and with the bypass part 62 of the first current path 84 connected, creating the second current path 85 with the first rung 84 connected is.

The one by the first current path 84 flowing current is perpendicular to the magnetization directions 31 . 32 . 33 and 34 of the elements 1-1 . 1-2 . 2-1 and 2-2 , The second current path 85 indicates the branch part 86 on, whereby the branched streams in the respect to the magnetization directions 31 . 32 . 33 and 34 of the elements 1-1 . 1-2 . 2-1 and 2-2 horizontal plane are antiparallel to each other, and they are with respect to the magnetization directions in the plan view of the magnetic sensor 1 vertical.

The second current path 85 is connected so that in the second current path 85 diverted currents through the input and output side of the first current path 84 flow. The first rung 84 and the second rung 85 overlap each other in the supervision, and the magnetic sensor 1 is arranged in the overlapping part.

The magnetic sensor 1 and the power line 61 are on the board 63 or a housing attached.

As in 23B shown is one (for example, the first area 11 ) of the two in the magnetic sensor 1 existing areas disposed on a side surface of the US, ie, at the position A relatively close to the first vertical part 72 of the first current path 84 , The other area (for example, the second area 12 ) of the two areas is close to the center position B of the second parallel part 73 of the first current path 84 arranged. Both areas, ie the first area 11 and the second area 12 have a gradient of the magnetic field induced by the current to be measured. Thus, by forming the magnetic sensor 1 in any of the first to seventh embodiments described above, an output proportional to the current to be measured can be obtained while at the same time the magnetic interference field can be compensated.

 Thus, even if a large current is to be measured, the induced magnetic field can be damped, thereby improving the measurement accuracy without saturating the elements.

 Induction noise, such as switching noise, can be suppressed because the magnetic sensor is enclosed by the power line.

The magnetic sensor 1 and the power line 61 may be in whole or in part with the resin molding 64 and the like. In this way, the magnetic sensor 1 and the power line 61 integrated with each other in whole or in part by the resin molded article, which improves the practicality of the attachment while making it possible to reduce a difference in positioning accuracy.

Here, the magnetic interference field without the second current path 85 be compensated. However, through the second current path 85 the damping effect can be improved.

Twelfth Embodiment

The current detector 60 according to the twelfth embodiment will be described in more detail below. Again, only parts of those of the eleventh embodiment will be described below, and a description of the same parts as in the eleventh embodiment will be omitted. In the eleventh embodiment, the second current path is 85 branches, whereas in the twelfth embodiment, the first current path 84 is branched. The twelfth embodiment differs in this point from the eleventh embodiment.

24A is a schematic perspective view of the current detector 60 in the twelfth embodiment. 24B is a cross-sectional view taken along the line 24B-24B of 24A , 24C is a top view of the current detector 60 in the twelfth embodiment. 24D is a schematic view of the in which in the 24A to 24C shown current detector 60 used magnetic sensor 1 , In the 24A to 24D is the X direction as the direction of current flow through the power line 61 Are defined. Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 is the Y direction or the -Y direction, and the direction of the default magnetic field is the X direction.

As in 24B shown points at the current detector 60 the twelfth embodiment, the power line 61 a first current path 84 on, one in cross section (XZ plane) along the direction of the through the power line 61 flowing stream (X-direction) in U-shape (inverted U-shape with edges) formed bypass part 62 having.

As in 24B shown points the second current path 85 a linear part 76 , one of the linear part 76 branching branch part 90 (on the upstream side) and one of the linear part 76 bending vertical part 91 (on the downstream side). The branch part 90 is at the first parallel part 71 of the first current path 84 connected. The vertical part 91 is at the second parallel part 73 the first current paths 84 connected. The magnetic sensor 1 is within one of parts of the first parallel part 71 , the first vertical part 72 , and the second parallel part 73 of the first current path 84 , and the second rung 85 enclosed "white space" 83 arranged. Further, the second current path 85 arranged so that the current therein is parallel to the current direction in the first current path 84 flows. The second current path 85 is arranged so that both current paths overlap in the supervision. The magnetic sensor 1 is between the first rung 84 and the second current path 85 arranged. The first rung 84 and the second rung 85 have a branch / merge part (white space 83 ) having flat parts formed by both paths and side surface parts. The currents flowing through the flat parts are parallel to each other, and the currents flowing through the side surface parts are also parallel to each other. The magnetization directions of the solid layers of the magnetic sensor 1 are perpendicular to the direction of the current flowing through the side surface portions. The two areas of the magnetic sensor 1 are applied with induced magnetic fields of opposite polarity. The magnetic sensor 1 and the power line 61 are on the board 63 or a housing attached. As in 24B shown is one of the two in the magnetic sensor 1 existing areas (for example, the first area 11 ) are arranged on one of the side surfaces of the Us, ie at the position A relatively close to the first vertical part 72 of the first current path 84 , The other area (for example, the second area 12 ) of the two areas is close to the center position B of the second parallel part 73 of the first current path 84 arranged. The two areas, ie the first area 11 and the second area 12 , have a gradient of the magnetic field induced by the current to be measured. Thus, by forming the magnetic sensor 1 In any of the above-mentioned first to seventh embodiments, an output proportional to the current to be measured can be obtained while the magnetic interference field can be simultaneously compensated. Thus, even if a large current is to be measured, the induced magnetic field can be damped, thereby improving the measurement accuracy without saturating the elements. Induction noise, such as switching noise, can be more efficiently suppressed because the magnetic sensor from the power line 61 is enclosed. The magnetic sensor 1 and the power line 61 may be wholly or partly of the resin molding 64 and the like integrated. In this way, the magnetic sensor 1 and the power line 61 integrated with each other in whole or in part by the resin molded article, which improves the practicality of the attachment while making it possible to reduce a difference in positioning accuracy.

 Thirteenth Embodiment

The current detector 60 according to the thirteenth embodiment will be described in more detail below. Again, only parts different from those of the ninth embodiment will be described below, and a description of the same parts as in the ninth embodiment will be omitted.

In the ninth embodiment, the magnetic sensor is 1 parallel to the second current path 85 arranged while the magnetic sensor 1 in the thirteenth embodiment perpendicular to the second current path 85 is arranged. The thirteenth embodiment differs from the ninth embodiment in this point.

25A is a schematic perspective view of the current detector 60 in the thirteenth embodiment. 25B is a cross-sectional view taken along the line 25B-25B of 25A , 25C is a schematic perspective view of the current detector 60 with one with a resin molding 64 covered power line 61 , 25D FIG. 12 is a cross-sectional view taken along line 25D-25D of FIG 25C , 25E is a schematic view of the in the 25A to 25D shown current detector 60 used magnetic sensor 1 , In the 25A to 25E is the X direction as the direction of the through the power line 61 defined flowing current. Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 existing elements 10 is the Y direction or the -Y direction, and the direction of the default magnetic field is the X direction.

As in 25B shown, indicates the power line 61 in the current detector 60 the thirteenth embodiment, a first current path 84 with a bypass part formed in U-shape (inverted U-shape with edges) 62 and a linear second current path 85 on. In the in 25B shown magnetic sensor 1 is one (for example, the first area) of the two in the magnetic sensor 1 existing areas vertically with respect to the second current path 85 and relatively close to the second horizontal part 73 of the first current path 84 while the other area (for example, the second area 12 ) of the two areas further away from the second horizontal part 73 is arranged. The two areas (ie the first area 11 and the second area 12 ) have a gradient of the magnetic field induced by the current to be measured. Thus, through the design of the magnetic sensor 1 In any of the first to seventh embodiments described above, an output proportional to the current to be measured can be obtained while the magnetic noise can be simultaneously compensated. Thus, even if a large current is to be measured, the induced magnetic field can be attenuated, whereby the measurement accuracy without saturation of the elements 1-1 . 1-2 . 2-1 and 2-2 is increased. Induction noise, such as switching noise, can be suppressed because the magnetic sensor from the power line 61 is enclosed. As in 25C and 25D shown, the magnetic sensor 1 and the power line 61 be integrated in whole or in part with a resin molding and the like. In this way, the magnetic sensor 1 and the power line 61 with each other through the resin molding 64 integrated, which makes it possible to use the magnetic sensor 1 and the power line 61 at the same time on the power line 76 to fix. Thus, a difference in the positioning accuracy can be reduced, and the practicality of the attachment is improved. Note that in terms of 25D the gap between the magnetic sensor 1 and the bypass part with the resin molded body 64 can be completed.

 (Fourteenth Embodiment)

The current detector 60 according to the fourteenth embodiment will be described in more detail below. Again, only parts different from those of the eighth to thirteenth embodiments will be described below, and a description of the same parts as in the eighth to thirteenth embodiments will be omitted hereafter.

In the current detector 60 The eighth to thirteenth embodiments are the first current path 84 and the second rung 85 branched and merged in the side view, whereas in the current detector 60 of the fourteenth embodiment, the first current path 84 and the second rung 85 branched out and merged in the supervision. The fourteenth embodiment differs in this point from the eighth to thirteenth embodiments.

26A is a perspective view of the current detector 60 in the fourteenth embodiment. 26B is a side view of the current detector 60 in the fourteenth embodiment. 26C is a top view of the current detector 60 in the fourteenth embodiment. In the 26A to 26C is the X direction as the direction of the through the power line 61 defined flowing current. Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 existing elements 10 is the Z direction or the -Z direction, and the direction of the default magnetic field is the Y direction. As in the 26A to 26C shown is a white space 83 for accommodating the magnetic sensor 1 in the middle of the power line 61 and formed between the branch position and the merging position. The longitudinal direction (X direction) of the empty space 83 is preferably in the cross-sectional view of the XZ plane with the direction (X direction) of the through the power line 61 aligned with flowing electricity.

As in the 26A to 26C shown is the magnetic sensor 1 so arranged that in the white space 83 The normal to the main surface of the magnetic sensor 1 with the direction (X-direction) of the through the power line 61 is aligned with flowing electricity. Therefore, as in 26D shown, the magnetic sensor 1 in the manner indicated below within the white space 83 arranged. In particular, the magnetization directions 31 . 32 . 33 and 34 the solid layers in the magnetic sensor 1 existing elements 1-1 . 1-2 . 2-1 and 2-2 perpendicular to the direction (X-direction, as in the 26A . 26B and 26C shown) of the current flow through the power line 61 , Further, the magnetization direction is 31 and 33 the solid layers of the elements 1-1 and 2-1 the -Z direction, and the magnetization direction 32 and 34 the solid layers of the elements 1-2 and 2-2 is the Z direction. In the current detector 61 According to the fourteenth embodiment of the present invention, the longitudinal direction (X direction) of the void 83 in the XZ cross-sectional view substantially with the direction (X direction) of the current flow through the power line 61 aligned. Thus, the first current path 84 and the second rung 85 around the white space 83 are branched, substantially the same cross-sectional area. The first rung 84 and the second rung 85 have essentially the same shape. In this way, the shape of the first current path is 84 substantially the same as that of the second current path 85 whereby the frequency characteristics are improved in the measuring magnetic field received by the element. The of the elements 11 and 12 received magnetic fields have substantially the same strength in mutually opposite directions, which can maximize the output of the magnetic sensor placed between these elements. The current detector 60 The fourteenth embodiment of the present invention preferably has the current paths while the shape of the void 83 in plan view has any shape with parallel sides, in particular a rectangle or a rectangle with rounded corners, a trapezoid, a rhombus, a parallelogram etc. Preferably, the void space 83 a rectangular shape with rounded corners on. When the shape of the white space 83 in the supervision is a rectangle with rounded sides, can the flow resistance of the current through the power line 61 be reduced.

 (Fifteenth Embodiment)

The current detector 60 according to the fifteenth embodiment will be described in more detail below. Again, only parts different from those of the fourteenth embodiment will be described below, and a description of the same parts as in the fourteenth embodiment will be omitted below.

In the fourteenth embodiment, the space is 83 in the middle of the power line 61 arranged. In contrast, the white space 83 in the fifteenth embodiment, from the center of the power line 61 arranged shifted, and the solid layers of the elements 1-1 . 1-2 . 2-1 and 2-2 have different magnetization directions. The fifteenth embodiment differs from the fourteenth embodiment in this point.

27A FIG. 12 is a plan view of the power line used in the current detector according to the fifteenth embodiment. FIG 62 , 27B is a side view of the power line 61 , and 27C is a perspective view of the power line 61 , 27D is a schematic view of the with in the 27A to 27C shown power line 61 used magnetic sensor 1 , 27E is a partially enlarged view of the white space 83 the power line 61 in which the magnetic sensor 1 is arranged in the current detector according to the fifteenth embodiment. In the 27A to 27E is the X direction as the width direction of the power line 61 defined, and the Y direction is defined as the longitudinal direction (direction of current flow). Each of the magnetosensitive directions 31 . 32 . 33 and 34 of the elements 10 is the X direction or the -X direction, and the direction of the default magnetic field is the Y direction.

As in the 27A and 27C shown points at the current detector 60 of the fifteenth embodiment, the power line 61 a rectangular shape in the cross-sectional view and a void in the plan view 83 between a branch position 81 and a merger position 82 on. The power line 61 is branched and through the white space 83 in a first rung 84 and a second current path 85 divided up. As in 27E shown is the magnetic sensor 1 in supervision within the void 83 arranged.

As mentioned above, the whitespace is 83 in the width direction of the power line 61 arranged away from the middle. In this way is the white space 83 in the width direction of the power line 61 arranged off the center, whereby in the X direction, ie in the plan view in the width direction of the power line 61 , inside the white space 83 a magnetic field gradient occurs. As in 27D shown is the magnetic sensor 1 so arranged that in the white space 83 the direction of the normal to the main surface of the magnetic sensor 1 with the direction of the normal to the upper surface of the power line 61 is aligned. Therefore, as in 27D shown, the magnetic sensor 1 in the manner described below within the void 83 arranged. In particular, the magnetization directions 31 . 32 . 33 and 34 the solid layers in the magnetic sensor 1 existing elements 1-1 . 1-2 . 2-1 and 2-2 parallel to the transverse direction (X direction in the 27A and 27C ) of the power line 61 , In other words, the magnetization direction 31 and 33 the solid layers of the elements 1-1 and 2-1 is the X direction, and the magnetization direction 32 and 34 the solid layers of the elements 1-2 and 2-2 is the -X direction. As in 27E shown is the magnetic sensor 1 away from the center line l of the white space 83 arranged. If the width in the transverse direction of the power line 61 31 mm, and the width of the white space 83 3 mm to 6 mm, is the ratio of the deviation J to the width of the void 83 preferably 0% to 100%, where J is the storage of the center line m of the magnetic sensor 1 from the centerline l of the void 83 is. This means that the clip is inside the white space. Further, the ratio of the tray J to the width of the white space 83 50% or more to easily detect a difference in the output, and further preferably 85% or less, which reduces the error due to the frequency. The above-mentioned ratio can be represented by (distance from the center line of the void to the center part of the magnetic sensor) / (distance from the center line of the void to the end of the void (1/2 the width of the void)). If the width of the white space 83 6 mm (ie the distance from the center line l to the end is 3 mm), and the distance between the first area 11 and the second area 12 of the magnetic sensor is 1 mm, the simulation shows that the tray J is between the center line m of the magnetic sensor 1 and the centerline l of the void 83 preferably in a range of 1.5 to 2.5 mm.

Thus, the magnetic sensor 1 in any one of the first to seventh embodiments, such that the magnetization direction of its respective fixed layers is parallel to the X direction. As a result, an output proportional to the current to be measured can be obtained, and the magnetic noise can be compensated.

 The magnetic field gradient is damped by the current flowing through a first branch part and a second branch part, whereby the measurement accuracy can be increased without saturating the elements.

28 is a graph showing the relationship between the position in the 27E shown, the space described above 83 and the magnetic flux density in the X direction. Measurement of the magnetic flux density is performed along a line of sight extending in the X direction (solid line in the X direction shown in FIG 28C ), passing through an intermediate point of dimension of the white space 83 in the Y direction (length of the void 83 ) and the center of the dimension in the Z direction of the power line 61 goes (thickness of the power line 61 ). In the graph of 28 denotes the horizontal axis (position in the width direction) the distance (mm) from the central axis (alternately long and short dashed line in the illustration of 27A ) extending in the longitudinal direction (Y direction) of the power line 61 extends to the measuring position. Note that the white space 83 in a range of 3 to 9 mm off the central axis in the longitudinal direction (Y direction) of the power line 61 is trained. That is, if the dimension of the white space 83 in the X direction (width of the white space 83 ) 6 mm is (9 mm - 3mm), the center axis of the void occurs 83 in the longitudinal direction (Y-direction) through the position ((3 mm + 9 mm) / 2) 6 mm away from the central axis in the longitudinal direction of the power line 61 , The power line is energized with alternating current of 120 A at 10 Hz to 500 kHz.

As in 28 4, the magnetic field density at the position is 6 mm in the width direction (ie, the central axis extends in the Y direction of the void 83 ) least. When the position in the width direction deviates from 6 mm, the magnetic flux density becomes large, as found. That is, when the position in the width direction is in a range of less than 6 mm (a range of 3 mm to 6 mm), a magnetic field gradient occurs between two different points. Also, when the position in the width direction is in a range of more than 6 mm (a range of 6 mm to 9 mm), a magnetic field gradient occurs between two different points. Even at different AC frequencies, the resulting graphs are essentially the same. That is, the magnetic field density within the white space 83 varies little with a change in AC frequency. Thus, at each frequency, only one amplification need be made, thereby reducing the number of amplifiers to be provided, which may have the effect of avoiding errors.

 Sixteenth Embodiment

The current detector 60 according to the sixteenth embodiment will be described in more detail below. Again, only parts different from those of the tenth embodiment will be described below, and a description of the same parts as in the tenth embodiment will be omitted.

29A is a schematic perspective view of the current detector 60 in the sixteenth embodiment. 29B FIG. 12 is a cross-sectional view taken along line 29B-29B in FIG 29A , 29C is a schematic plan view of the current detector 60 in the sixteenth embodiment. 29D is a schematic view of the in which in the 29A to 29C shown current detector 60 used magnetic sensor 1 , 29E is a partially enlarged view of the environment of a second void 95 , Note that 29E the magnetic sensor 1 not showing. In the 29A to 29C is the X direction as the direction of current flow through the power line 61 Are defined. Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 existing elements 10 is the X direction or the -X direction, and the direction of the default magnetic field is the Y direction.

In the sixteenth embodiment, the second current path 85 a second branch merging part on (second empty space 95 ). The second white space 95 has pages 100 and 101 on, perpendicular to the main flow direction through the second current path 85 is. Thus, a part of the current flowing in the X direction becomes from the center (center axis r) of the vertical side 101 branched in two directions, namely in the -Y direction and the Y direction. On the other hand, the currents from the Y direction and the -Y direction flow to the center of the page 100 together, and then the merged streams flow again in the X direction. In this case, the respective sets of current directions 96 and 97 , respectively. 98 and 99 , as in 29E shown 180 ° rotational symmetry to the central axis r of the second void 95 on. The magnetic fields induced by the two branched current directions are perpendicular to the respective currents and antiparallel to each other. As in 29 shown is the magnetic sensor 1 at a position other than the center in the Y direction of the second empty space 95 arranged to the second white space 95 in the X direction to span. The first area 11 and the second area 12 of the magnetic sensor 1 overlap with the current flows 98 and 99 and are symmetrical with respect to the second void 95 , The magnetization directions 31 . 32 . 33 and 34 the solid layers are perpendicular to the current direction 98 respectively. 99 (Y-direction or -Y-direction). The magnetic sensor 1 is arranged in this way so that a proportional to the current to be measured output can be obtained, and the magnetic interference can be compensated simultaneously. The measurement accuracy can be improved without the elements 1-1 . 1-2 . 2-1 and 2-2 to saturate. In this case, the magnetic interference field without the first current path 84 be compensated. However, by providing the first current path, the damping effect can be improved.

 (Seventeenth Embodiment)

The current detector 60 according to the seventeenth embodiment will be described in more detail below. Again, only parts different from those of the tenth embodiment will be described below, and a description of the same parts as in the tenth embodiment will be omitted.

30A is a schematic perspective view of the current detector 60 according to the seventeenth embodiment. 30B FIG. 12 is a cross-sectional view taken along line 30B-30B of FIG 30A , 30C is a schematic plan view of the current detector 60 in the seventeenth embodiment. 30D is a schematic view of the in which in the 30A to 30C shown current detector 60 used magnetic sensor 1 , 30E is a schematic plan view of the resin-molded magnetic sensor 1 ; 30F FIG. 12 is a schematic cross-sectional view taken along line 30F-30F of FIG 30E ; and in the 30A to 30F is the X direction as the direction of current flow through the power line 61 Are defined 61 , Each of the magnetosensitive directions 31 . 32 . 33 and 34 in the magnetic sensor 1 existing elements 10 is the X direction or the -X direction, and the direction of the default magnetic field is the Y direction.

In the seventeenth embodiment, the second current path 85 a cutting part 120 on. The cutting part 120 has two to the direction of the through the second current path 85 flowing mainstream vertical sides 100 and 101 , These sides are parallel to each other and have two directions of flow 96 and 97 , in the plan view 180 ° rotationally symmetrical to the two respective sides 100 and 101 are. The magnetic fields induced by the two current directions are perpendicular to the respective currents and are antiparallel to each other. As in 30 shown is the magnetic sensor 1 parallel to the two sides 100 and 101 , the perpendicular to the direction of the main current flow through the second current path 85 are so that the middle of the gap wipe the two sides 100 and 101 is aligned with the center of the sensor. The magnetization directions 31 . 32 . 33 and 34 the solid layers are perpendicular to the two current directions 96 and 97 (Y-direction or -Y-direction). As in 30C shown is one of the two in the magnetic sensor 1 existing areas (for example, the first area 11 ) arranged so that the cutout part 120 at a position A near one of the two to the direction of the main flow of current through the second current path 85 vertical sides 100 and 101 arranged. Further, the other area (for example, the second area 12 ) at a position B near the other of the two sides 100 and 101 arranged. The two in the magnetic sensor 1 existing areas (ie the first area 11 and the second area 12 ) have a gradient of the magnetic field induced by the current to be measured. Thus, by forming the magnetic sensor 1 In any of the above-mentioned first to seventh embodiments, an output proportional to the current to be measured can be obtained while the magnetic interference field can be simultaneously compensated. Induction noise, such as switching noise, can be suppressed because the magnetic sensor from the power line 61 is included. The magnetic sensor 1 and the power line 61 may be in whole or in part with a resin molding 64 and the like. In this way, the magnetic sensor 1 and the power line 61 integrated with each other through the resin molded article, thereby improving the practicality of the attachment while enabling a difference in positioning accuracy to be reduced. In this case, the magnetic interference field without the first current path 84 be compensated. However, by providing the first rung 84 the damping effect can be improved.

In the magnetic sensor 1 of the seventeenth embodiment are as in Figs 30E and 30F 2, the two regions, namely the first region and the second region, are divided into two chips, but these regions can also form a chip, as described above. Note that the elements and coils in the two chips are deposited simultaneously. The two chips are packed together by resin molding and the like. However, the two chips do not need to be packed together as long as they are attached. The sensor uses the two chips to operate the bridge circuit, whereby the magnetic field gradient can be detected with high accuracy by placing the two chips apart, increasing the differential output from the bridge circuit without increasing the size of the chip.

[Example 1]

<Difference in output zero>

A magnetic sensor 1 according to the present invention was prepared and its characteristics were determined as follows. 31 is a schematic diagram of the magnetic sensor 1 according to the example. The magnetic sensor 1 had a bridge circuit 5 with four elements 1-1 . 1-2 . 2-1 and 2-2 , 31 Fig. 12 shows the relationship between the application directions of the measuring magnetic fields Hm1 and Hm2 and the magnetosensitive directions of the elements 1-1 . 1-2 . 2-1 and 2-2 , A magnetic sensor as a comparative example had a similar bridge circuit 5 as in the example of the magnetic sensor 1 but differed from the example in the magneto-sensitive direction of the elements. In particular, the magnetosensitive directions were those with the power connection (Vcc) of the bridge circuit 5 connected elements 1-1 and 2-1 aligned anti-parallel to each other, and the magnetosensitive directions of the connected to the ground terminal (GND) elements 1-2 and 2-2 were aligned anti-parallel to each other. Further, the magnetosensitive direction of the element was 1-1 the same as that of the element 2-2 , and the magnetosensitive direction of the element 2-1 was the same as that of the element 1-2 ,

In the magnetic sensors 1 Example and Comparative Example were the substrate 1 , the Elements 1-1 . 1-2 . 2-1 and 2-2 and the default coil 3 as in 17C shown arranged. The special laminated structure inside the magnetic sensor 1 was like in 19 established.

At the in 31 shown magnetic sensor 1 A voltage of 5V was applied between the power supply (Vcc) and ground connection (GND) of the bridge circuit 5 applied, and a current flow through the default coils was set so that the default magnetic field was 10 mT. The differential output (VM1 - VM2 as in 31 shown), measured without applied measuring magnetic field (measuring magnetic field set to 0 mT), was measured as "output zero point". Two disk-shaped silicon wafers were used as substrate 2 manufactured, and the magnetic sensor 1 was formed on each silicon wafer. As in 32A The measurement was taken at 5 points of the silicon wafer (point T, point C, point B, point L and point R). The measurement results of the magnetic sensor in the example are in 32B shown. The measurement results of the magnetic sensor in the comparative example are in 32C shown. In the magnetic sensor of the example as in 32B shown the difference in the output zero point was low. Thus, the output of the magnetic sensor required no correction, or only a simple correction was required. In other words, it was not a complicated device for correcting the output required, which makes it possible to reduce the manufacturing cost of the magnetic sensor.

[Example 2]

 <Zero point drift of the output as a function of the ambient temperature>

The magnetic sensor manufactured in Example 1 as the invention example 1 and the magnetic sensor as a comparative example were used to measure the zero-point drift of the output from these magnetic sensors by changing the ambient temperature from -20 ° C to 100 ° C. The measurement results are in the 33A and 33B shown. As in 33A and 33B shown, pointed the magnetic sensor 1 in the example, a small zero-point drift (ΔVoff) of its output (within ± 0.25 mV). Thus, the output from the magnetic sensor does not require correction, or only a simple correction is required. In other words, no complicated device for correcting the output was required, which makes it possible to reduce the manufacturing cost of the magnetic sensor.

[Example 3]

<Change of the output characteristic depending on the ambient temperature>

In the in 31 shown magnetic sensor 1 A voltage of 5V was applied between the power connection (Vcc) and the ground connection (GND) of the bridge circuit 5 was applied, and a current flow was set so that the default magnetic field of the default coil was 10 mT. The differential output at a measuring magnetic field of 3 mT (the difference between the output potential from the first output terminal VM1 and the output potential from the first output terminal VM2 as in FIG 31 shown) was measured as "output". Six circular silicon wafers were used as substrates 2 and on each silicon wafer became a magnetic sensor 1 educated. As in 34A 5, the measurement was made at 5 locations of the silicon wafer (point T, point C, point B, point L and point R) by passing a default current of 10 mA through the default coil. The measurement results of the magnetic sensor are in 34B shown. As in 34B As shown, the difference in the output from the magnetic sensor was small. Thus, the output from the magnetic sensor did not require correction, or only a simple correction was required. In other words, no complicated device for correcting the output was required, which makes it possible to reduce the manufacturing cost of the magnetic sensor.

[Example 4]

<Correction values based on the ambient temperature>

35 collectively shows correction quantities for various sensors (for example, a current sensor, a magnetic field strength sensor, and the like), which are calculated using the in 31 shown magnetic sensor 1 were manufactured. Here, the term "various sensors" means a module which uses the magnetic sensor as a component. In the in 35 In the example shown, the output amplitude and the output zero point require a correction at normal temperature. However, no correction was required in terms of both the output amplitude and the output zero at high and low temperatures. Thus, a high temperature and low temperature correction value determined at normal temperature can be used, and moreover, no correction for high and low temperatures is required.

36A FIG. 12 is a flowchart for explaining the output correction for a magnetic sensor for various sensors (for example, a current sensor, a magnetic field strength sensor, and the like) using the magnetic sensor of the comparative example. 36B Fig. 10 is a flowchart for explaining the output correction for a magnetic sensor for various sensors using the magnetic sensor of the example. As in the flowchart of 36A 1, the output correction for the high and low temperature magnetic sensors in step S11 has been performed on various sensors using the magnetic sensor of the comparative example, followed by the execution of the process step S12. Then, in step S13, the output correction for the magnetic sensor was performed at normal temperature. In contrast, as in the flow chart of 36B 2, in various sensors using the magnetic sensor of the comparative example, the output correction for the magnetic sensor in step S21 followed by execution of the process step S22 is not performed. Then, in step S23, the output correction for the magnetic sensor was performed at normal temperature. In this way, the number of repeated output corrections for the magnetic sensor could be reduced by using the magnetic sensor of the example of various sensors. Therefore, an increase in the manufacturing cost associated with the output correction can be suppressed.

LIST OF REFERENCE NUMBERS

1

magnetic sensor

2

substratum

3

Default coil

5

bridge circuit

1-1, 1-2, 2-1, 2-2

Magnetoresistive Effect Element (Element)

Claims (17)

 Magnetic sensor with: a substrate having a major surface; at least two magnetoresistive effect elements formed on the main surface and connected to a power terminal of a bridge circuit; at least two magnetoresistive effect elements formed on the main surface and connected to a ground terminal of the bridge circuit; a first region in which one of the at least two magnetoresistive effect elements connected to the power connection and one of the at least two magnetoresistive effect elements connected to the ground connection are arranged; a second region in which a further at least two magnetoresistive effect elements connected to the current connection and a further one of the at least two magnetoresistive effect elements connected to the ground connection are arranged; and a default coil having a first default applying portion for biasing the first range with a default magnetic field and a second default biasing portion for imparting the second range with a default magnetic field magnetosensitive directions of the two magnetoresistive effect elements connected to the power connector are the same, magneto-sensitive directions of the two connected to the ground terminal magnetoresistive effect elements are the same, and the difference between the cross-sectional area of the first preselecting part and the cross-sectional area of the second preselecting part is 35.4% or less.  A magnetic sensor according to claim 1, wherein the difference between the thickness of the first target impingement portion and the thickness of the second target impingement portion is 17.7% or less.  A magnetic sensor according to claim 1 or 2, wherein the difference between the distance of the magnetoresistive effect element in the first region from the first default application part and the distance of the magnetoresistive effect element in the second region from the second default application part 5.78% or less.  A magnetic sensor according to any one of claims 1 to 3, wherein the difference in thickness between at least two magnetoresistive effect elements connected to the power terminal is 3.0% or less, and the difference in thickness between at least two magnetoresistive effect elements 3.0 connected to the ground terminal % or less.  The magnetic sensor according to claim 4, wherein the difference between the thickness of the at least two magnetoresistive effect elements connected to the power terminal and the thickness of the at least two magnetoresistive effect elements connected to the ground terminal is 3.0% or less.  A magnetic sensor according to any one of claims 1 to 5, wherein the difference between the thickness of the first target impingement portion and the thickness of the second target impingement portion is 3.0% or less.  Magnetic sensor according to one of claims 1 to 6, wherein the two arranged in the first region magnetoresistive effect elements are connected in series, the two arranged in the second region magnetoresistive effect elements are connected in series, magneto-sensitive directions of the two formed in the first area magnetoresistive effect elements are opposite to each other, and magneto-sensitive directions of the two formed in the second region magnetoresistive effect elements are opposite to each other. Magnetic sensor according to one of claims 1 to 6, wherein the one arranged in the first region and connected to the power connection magnetoresistive effect element and the further arranged in the second region and connected to the ground terminal magnetoresistive effect element are connected in series, the magnetoresensitive directions of the two in the first region arranged magnetoresistive effect elements arranged in the first region and connected to the ground terminal magnetoresistive effect element and the further arranged in the second region and connected to the power supply magnetoresistive effect element are connected in series and magneto-sensitive directions of the two magnetoresistive effect elements arranged in the second region are the same.  Magnetic sensor according to one of claims 1 to 8, wherein the default coil has a default coil bypass part, and the cross-sectional area of the default coil bypass part is greater than the cross-sectional area of both the first and the second default impingement -Part.  Magnetic sensor according to one of claims 1 to 9, wherein the magnetic sensor further comprises a feedback circuit, and the feedback circuit is adapted to generate a feedback magnetic field based on a magnetic field strength detected by the magnetoresistive effect element, the Feedback magnetic field for compensating the detected magnetic field strength is dimensioned.  Current detector with: a power line having a void between a branching position and a merging position, and a first current path and a second current path separated by the void space; and the magnetic sensor according to one of claims 1 to 10, which is provided in the void space.  Current detector according to claim 11, wherein the magnetic sensor is arranged in the void, that the magnetosensitive direction of a certain layer of the electromagnetic-effect element in the magnetic sensor is perpendicular to the current directions in the first current path and in the second current path.  A current detector according to claim 11 or 12, further comprising a power line having a bypass part configured to bypass the magnetic sensor.  A current detector according to any one of claims 11 to 13, wherein the substrate of the magnetic sensor comprises a first substrate having a first region and a second substrate having a second region, the first substrate being separated from the second substrate.  A method of manufacturing a magnetic sensor, comprising: Producing a substrate having a major surface; Forming a bridge circuit having, on the main surface, a power terminal, a ground terminal, at least two magnetoresistive effect elements connected to the power terminal, and at least two magnetoresistive effect elements connected to the ground terminal; and Forming a default coil having a first default apply part for applying a first region having a default magnetic field and a second default apply part to apply a second magnetic field to a second region, the first region being coupled to one of the at least one two magnetoresistive effect elements connected to the power connection and one of the at least two magnetoresistive effect elements connected to the ground connection, the second region having a further one of the at least two magnetoresistive effect elements connected to the power connection and a further one of the at least equipped with two connected to the ground terminal magnetoresistive effect elements, wherein the step of forming the bridge circuit comprises: simultaneously forming the two magnetoresistive effect elements connected to the power connector; and simultaneously forming the two magnetoresistive effect elements connected to the ground terminal.  The manufacturing method according to claim 15, wherein the step of forming the bridge circuit comprises: simultaneously forming the two magnetoresistive effect elements connected to the power connection and the two magnetoresistive effect elements connected to the ground connection.  The manufacturing method according to claim 15 or 16, wherein the first default apply part and the second default apply part are formed simultaneously.

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