EP1313744A4 - Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition - Google Patents

Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition

Info

Publication number
EP1313744A4
EP1313744A4 EP01964374A EP01964374A EP1313744A4 EP 1313744 A4 EP1313744 A4 EP 1313744A4 EP 01964374 A EP01964374 A EP 01964374A EP 01964374 A EP01964374 A EP 01964374A EP 1313744 A4 EP1313744 A4 EP 1313744A4
Authority
EP
European Patent Office
Prior art keywords
substrate
vapor deposition
chemical vapor
metal films
forming metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01964374A
Other languages
German (de)
French (fr)
Other versions
EP1313744A1 (en
Inventor
Robin A Gardiner
Peter S Kirlin
Thomas H Baum
Douglas Gordon
Timothy E Glassman
Sofia Pombrik
Brian A Vaartstra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/649,549 external-priority patent/US7323581B1/en
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of EP1313744A1 publication Critical patent/EP1313744A1/en
Publication of EP1313744A4 publication Critical patent/EP1313744A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic System without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic System
    • C07F11/005—Compounds containing elements of Groups 6 or 16 of the Periodic System compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
    • C07F15/0033—Iridium compounds
    • C07F15/004—Iridium compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic System
    • C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic System without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic System without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C07F5/06—Aluminium compounds
    • C07F5/069—Aluminium compounds without C-aluminium linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic System without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
    • C07F9/005—Compounds of elements of Group 5 of the Periodic System without metal-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
    • C07F9/94—Bismuth compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
EP01964374A 2000-08-28 2001-08-23 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition Withdrawn EP1313744A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US649549 2000-08-28
US09/649,549 US7323581B1 (en) 1990-07-06 2000-08-28 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
PCT/US2001/026339 WO2002018394A1 (en) 2000-08-28 2001-08-23 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition

Publications (2)

Publication Number Publication Date
EP1313744A1 EP1313744A1 (en) 2003-05-28
EP1313744A4 true EP1313744A4 (en) 2004-03-31

Family

ID=24605280

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01964374A Withdrawn EP1313744A4 (en) 2000-08-28 2001-08-23 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition

Country Status (4)

Country Link
EP (1) EP1313744A4 (en)
JP (1) JP2004507551A (en)
AU (1) AU2001285235A1 (en)
WO (1) WO2002018394A1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005035823A1 (en) * 2003-10-14 2005-04-21 Ube Industries, Ltd. METAL COMPLEX HAVING β-DIKETONATO LIGAND AND METHOD FOR PRODUCING METAL-CONTAINING THIN FILM
US7947814B2 (en) 2006-04-25 2011-05-24 Air Products And Chemicals, Inc. Metal complexes of polydentate beta-ketoiminates
WO2007140813A1 (en) * 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US7691984B2 (en) 2007-11-27 2010-04-06 Air Products And Chemicals, Inc. Metal complexes of tridentate β-ketoiminates
CN101959897A (en) 2008-02-27 2011-01-26 乔治洛德方法研究和开发液化空气有限公司 Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process
US8471049B2 (en) * 2008-12-10 2013-06-25 Air Product And Chemicals, Inc. Precursors for depositing group 4 metal-containing films
US8507704B2 (en) 2009-09-08 2013-08-13 Air Products And Chemicals, Inc. Liquid composition containing aminoether for deposition of metal-containing films
US9079923B2 (en) 2010-08-05 2015-07-14 Air Products And Chemicals, Inc. Multidentate ketoimine ligands for metal complexes
US8617305B2 (en) 2011-01-25 2013-12-31 Air Products And Chemicals, Inc. Metal complexes for metal-containing film deposition
US9499571B2 (en) 2014-12-23 2016-11-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
US9663547B2 (en) 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
KR102430540B1 (en) * 2015-05-27 2022-08-08 에이에스엠 아이피 홀딩 비.브이. Synthesis and use of precursors for ald of molybdenum or tungsten containing thin films
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US10358407B2 (en) 2016-10-12 2019-07-23 Asm Ip Holding B.V. Synthesis and use of precursors for vapor deposition of tungsten containing thin films
US10106568B2 (en) 2016-10-28 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
CN114364653A (en) 2019-09-11 2022-04-15 克雷多西斯有限公司 Cerium (IV) complexes and their use in organic electronic components
KR20210048408A (en) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. Semiconductor deposition reactor manifolds
TW202136571A (en) 2020-02-10 2021-10-01 荷蘭商Ａｓｍ Ｉｐ 控股公司 Deposition of hafnium oxide within a high aspect ratio hole
WO2022189431A1 (en) 2021-03-10 2022-09-15 Credoxys GmbH New cerium (iv) complexes and their use in organic electronics

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4501602A (en) * 1982-09-15 1985-02-26 Corning Glass Works Process for making sintered glasses and ceramics
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
WO1996008587A1 (en) * 1994-09-16 1996-03-21 Advanced Technology Materials, Inc. Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
WO1996040690A1 (en) * 1995-06-07 1996-12-19 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5820664A (en) * 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
WO1999000530A1 (en) * 1997-06-26 1999-01-07 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
WO1999027030A1 (en) * 1997-11-20 1999-06-03 Advanced Technology Materials, Inc. Alkane/polyamine solvent compositions for liquid delivery cvd

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5874693A (en) * 1981-10-29 1983-05-06 Nippon Soda Co Ltd Compound oxyalkoxide derivative and its preparation
JPS59168678A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Reflection checking film forming composition
JPS60140880A (en) * 1983-12-28 1985-07-25 Hitachi Ltd Manufacture of solar cell
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
JPH06272042A (en) * 1993-03-17 1994-09-27 Kawasaki Steel Corp Formation of thin film
JP4309477B2 (en) * 1997-05-14 2009-08-05 キネティック リミテッド Chemical vapor deposition precursor
JP4104713B2 (en) * 1998-01-09 2008-06-18 東京応化工業株式会社 Titanium complex and synthesis method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4501602A (en) * 1982-09-15 1985-02-26 Corning Glass Works Process for making sintered glasses and ceramics
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5820664A (en) * 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
WO1996008587A1 (en) * 1994-09-16 1996-03-21 Advanced Technology Materials, Inc. Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
WO1996040690A1 (en) * 1995-06-07 1996-12-19 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
WO1999000530A1 (en) * 1997-06-26 1999-01-07 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
WO1999027030A1 (en) * 1997-11-20 1999-06-03 Advanced Technology Materials, Inc. Alkane/polyamine solvent compositions for liquid delivery cvd

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JONES, ANTHONY C. ET AL: "Metal-organic chemical vapour deposition of lead scandium tantalate: chemical issues and precursor selection", POLYHEDRON (2000), 19(3), 351-355, XP002268230 *
See also references of WO0218394A1 *

Also Published As

Publication number Publication date
AU2001285235A1 (en) 2002-03-13
JP2004507551A (en) 2004-03-11
EP1313744A1 (en) 2003-05-28
WO2002018394A1 (en) 2002-03-07

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AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

RIN1 Information on inventor provided before grant (corrected)

Inventor name: VAARTSTRA, BRIAN, A.

Inventor name: POMBRIK, SOFIA

Inventor name: GLASSMAN, TIMOTHY, E.

Inventor name: GORDON, DOUGLAS

Inventor name: BAUM, THOMAS, H.

Inventor name: KIRLIN, PETER, S.

Inventor name: GARDINER, ROBIN, A.

RIC1 Information provided on ipc code assigned before grant

Ipc: 7C 07F 9/00 A

A4 Supplementary search report drawn up and despatched

Effective date: 20040213

RBV Designated contracting states (corrected)

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