EP1308242B1 - Processing of inhomogeneous material - Google Patents
Processing of inhomogeneous material Download PDFInfo
- Publication number
- EP1308242B1 EP1308242B1 EP02023996A EP02023996A EP1308242B1 EP 1308242 B1 EP1308242 B1 EP 1308242B1 EP 02023996 A EP02023996 A EP 02023996A EP 02023996 A EP02023996 A EP 02023996A EP 1308242 B1 EP1308242 B1 EP 1308242B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- temperature
- components
- different
- processing
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
Definitions
- the invention relates to a method for processing, in particular for Polishing the surface of at least two components Material.
- a typical example of a two-component material represents the glass ceramic Zerodur®, which is a crystal phase with a negative Coefficient of thermal expansion and a glass phase with a positive Has coefficient of thermal expansion. Both phases also point different removal properties.
- the Surface during the polishing process at a defined Machining temperature polished to a minimum polishing roughness.
- the Polishing roughness results largely from the different Removal properties of the two components.
- Application temperature of the material from the processing temperature deviates, it can be in addition to the polishing roughness due to the different coefficients of thermal expansion still lead to an increase the roughness due to different expansion of the two Components come, so the quality of the surface of the material is not more meets the requirements.
- the task is solved with a processing method, in particular for polishing the surface of at least two components material with at least one polishing pad and one Suspension at a predefinable processing temperature at which the Components due to different coefficients of thermal expansion a different state of expansion and due to different Removal properties have different removal rates, the Processing temperature is chosen so that the different removal of the Components because of their different expansion each other is compensated for that the roughness of the surface of the machined Material at the application temperature is minimal.
- the at least two components In the case of another material, it is also possible for the at least two components to have different coefficients of thermal expansion with the same removal properties.
- the object is achieved with a method at a predeterminable processing temperature and a known application temperature, the processing temperature being selected to be the same as the application temperature.
- the temperature of the polishing disc conveniently also measured the suspension.
- the processing temperature which in an advantageous embodiment of the suspension and / or Polishing wheel can be adjusted, checked and if necessary be adjusted.
- the figure shows schematically the surface 3 to be machined during processing at a processing temperature and after processing at the previously known application temperature.
- the processing temperature became lower than the application temperature selected.
- the glass phase 2 has one compared to the ceramic phase 1 greater removal and a positive coefficient of thermal expansion.
- the Ceramic phase has a negative coefficient of thermal expansion.
- the temperature rises to the final one Application temperature so that the glass phase 2 with a positive Thermal expansion coefficient corresponding to the expansion path 8 expands and the ceramic phase 1, which is a negative Has coefficient of thermal expansion, corresponding to the shrink path 6 contracts up to surface 7 of the ceramic phase.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Coating By Spraying Or Casting (AREA)
- Glass Compositions (AREA)
Abstract
Description
Die Erfindung betrifft ein Verfahren zur Bearbeitung, insbesondere zum Polieren der Oberfläche eines mindestens zwei Komponenten aufweisenden Materials.The invention relates to a method for processing, in particular for Polishing the surface of at least two components Material.
Ein typisches Beispiel für einen zwei Komponenten aufweisenden Werkstoff stellt die Glaskeramik Zerodur® dar, die eine Kristallphase mit einem negativen Wärmeausdehnungskoeffizienten sowie eine Glasphase mit einem positiven Wärmeausdehnungskoeffizienten aufweist. Beide Phasen weisen zudem unterschiedliche Abtragseigenschaften auf.A typical example of a two-component material represents the glass ceramic Zerodur®, which is a crystal phase with a negative Coefficient of thermal expansion and a glass phase with a positive Has coefficient of thermal expansion. Both phases also point different removal properties.
Bei den bekannten Bearbeitungsverfahren treten während bzw. nach der Bearbeitung die nachfolgend beschriebenen Effekte auf. Zunächst wird die Oberfläche während des Poliervorgangs bei einer definierten Bearbeitungstemperatur bis zu einer minimalen Polierrauhigkeit poliert. Die Polierrauhigkeit resultiert maßgeblich aus den unterschiedlichen Abtragseigenschaften der beiden Komponenten. Da meistens die Anwendungstemperatur des Materials von der Bearbeitungstemperatur abweicht, kann es zusätzlich zu der Polierrauhigkeit aufgrund der unterschiedlichen Wärmeausdehnungskoeffizienten noch zu einer Vergrößerung der Rauhigkeit durch eine unterschiedliche Ausdehnung der beiden Komponenten kommen, so daß die Qualität der Oberfläche des Materials nicht mehr den geforderten Ansprüchen entspricht. In the known machining processes occur during or after the Editing the effects described below. First, the Surface during the polishing process at a defined Machining temperature polished to a minimum polishing roughness. The Polishing roughness results largely from the different Removal properties of the two components. Most of the time Application temperature of the material from the processing temperature deviates, it can be in addition to the polishing roughness due to the different coefficients of thermal expansion still lead to an increase the roughness due to different expansion of the two Components come, so the quality of the surface of the material is not more meets the requirements.
Kommt das Material beispielsweise für die Herstellung von Wafern zum Einsatz werden Oberflächenrauhigkeiten von < 2 Å gefordert. Dies ist bislang durch die bekannten Verfahren nicht zu erreichen.If the material comes for example for the production of wafers Surface roughness of <2 Å is required. So far this is cannot be achieved by the known methods.
Folglich ist es die Aufgabe der Erfindung, die Oberflächenqualität des mindestens zwei Komponenten aufweisenden Werkstoffs bei der Anwendungstemperatur zu verbessern.Accordingly, it is the object of the invention to improve the surface quality of the material with at least two components in the Improve application temperature.
Die Aufgabe wird mit einem Verfahren zur Bearbeitung gelöst, insbesondere zum Polieren der Oberfläche eines mindestens zwei Komponenten aufweisenden Materials mit mindestens einer Polierscheibe und einer Suspension bei einer vorgebbaren Bearbeitungstemperatur, bei der sich die Komponenten aufgrund unterschiedlicher Wärmeausdehnungskoeffizienten einen unterschiedlichen Ausdehnungszustand und aufgrund unterschiedlicher Abtragseigenschaften unterschiedliche Abtragsraten aufweisen, wobei die Bearbeitungstemperatur so gewählt wird, daß der unterschiedliche Abtrag der Komponenten aufgrund deren unterschiedlicher Ausdehnung einander so kompensiert wird, daß die Rauhigkeit der Oberfläche des bearbeiteten Materials bei der Anwendungstemperatur minimal ist.The task is solved with a processing method, in particular for polishing the surface of at least two components material with at least one polishing pad and one Suspension at a predefinable processing temperature at which the Components due to different coefficients of thermal expansion a different state of expansion and due to different Removal properties have different removal rates, the Processing temperature is chosen so that the different removal of the Components because of their different expansion each other is compensated for that the roughness of the surface of the machined Material at the application temperature is minimal.
Hierbei wird ausgehend von einer bereits zum Fertigungsprozeß bekannten späteren Anwendungstemperatur in Abhängigkeit der jeweiligen Wärmeausdehnungskoeffizienten und der jeweiligen Abtragseigenschaften der Komponenten die Bearbeitungstemperatur oberhalb oder unterhalb der Anwendungstemperatur eingestellt, und zwar so, daß sich die Vertiefungen in der Oberfläche im Bereich der Komponente mit höherem Abtrag bei der Anwendungstemperatur entsprechend ihres Wärmeausdehnungskoeffizienten ausdehnen und gleichzeitig Erhöhungen im Bereich der anderen Komponente mit niedrigerem Abtrag bei Anwendungstemperatur schrumpfen oder sich zumindest weniger stark ausdehnen. Durch diese Vorgehensweise gelingt es, bei Kenntnis der späteren Anwendungstemperatur unter Berücksichtigung der materialspezifischen Eigenschaften Abtragseigenschaften und Wärmeausdehnungskoeffizienten ein weitgehendes Einebnen der Materialoberfläche bei der Anwendungstemperatur zu, erzielen.This is based on one already known for the manufacturing process later application temperature depending on the respective Coefficient of thermal expansion and the respective abrasion properties of the Components the processing temperature above or below the Set application temperature, so that the wells in the surface in the area of the component with higher removal at Application temperature according to its coefficient of thermal expansion expand and at the same time increases in the area of the other component shrink or shrink with lower stock removal at application temperature expand at least less. By doing this, with knowledge of the later application temperature taking into account the material specific properties removal properties and Thermal expansion coefficients an extensive leveling of the Material surface at the application temperature.
Bei einem anderen Werkstoff ist es auch möglich, daß die mindestens zwei
Komponenten unterschiedliche Wärmeausdehnungskoeffizienten bei jedoch
gleichen Abtragseigenschaften aufweisen.
Hierbei wird die Aufgabe mit einem Verfahren bei einer vorgebbaren
Bearbeitungstemperatur und einer bekannten Anwendungstemperatur gelöst,
wobei die Bearbeitungstemperatur gleich der Anwendungstemperatur gewählt
wird.In the case of another material, it is also possible for the at least two components to have different coefficients of thermal expansion with the same removal properties.
Here, the object is achieved with a method at a predeterminable processing temperature and a known application temperature, the processing temperature being selected to be the same as the application temperature.
Während der Bearbeitung stellt sich bei gleichen Abtragsverhalten der Komponenten eine optimierte Oberflächenrauhigkeit ein, die bei einer anderen Anwendungstemperatur als der Bearbeitungstemperatur durch die unterschiedlichen Wärmeausdehnungskoeffizienten und die damit verbundenen unterschiedlichen Ausdehnungen der Komponenten zu einer Verschlechterung der Oberflächenrauhigkeit führt.During machining, the same removal behavior arises Components an optimized surface roughness, that of another Application temperature than the processing temperature by the different coefficients of thermal expansion and the associated different expansion of the components to a deterioration of surface roughness.
In einer besonderen Ausgestaltung wird die Temperatur der Polierscheibe, günstigerweise auch der Suspension, gemessen.In a special embodiment, the temperature of the polishing disc, conveniently also measured the suspension.
Mit Hilfe dieser Vorgehensweise kann die Bearbeitungstemperatur, welche in einer vorteilhaften Ausführungsform über die Suspension und/oder die Polierscheibe eingestellt werden kann, kontrolliert und gegebenenfalls angeglichen werden.Using this procedure, the processing temperature, which in an advantageous embodiment of the suspension and / or Polishing wheel can be adjusted, checked and if necessary be adjusted.
In der nachfolgenden einzigen Figur wird die Erfindung beispielhaft näher erläutert. The invention is illustrated by way of example in the following single figure explained.
Dabei zeigt die Figur schematisch die zu bearbeitende Oberfläche 3 während
der Bearbeitung bei einer Bearbeitungstemperatur sowie nach der Bearbeitung
bei der bereits vorher bekannten Anwendungstemperatur. In der vorliegenden
Figur wurde die Bearbeitungstemperatur kleiner als die Anwendungstemperatur
gewählt. Außerdem weist die Glasphase 2 gegenüber der Keramikphase 1 einen
größeren Abtrag und einen positiven Wärmeausdehnungskoeffizienten auf. Die
Keramikphase hat einen negativen Wärmeausdehnungskoeffizienten.The figure shows schematically the surface 3 to be machined during
processing at a processing temperature and after processing
at the previously known application temperature. In the present
Figure, the processing temperature became lower than the application temperature
selected. In addition, the glass phase 2 has one compared to the
Während der Bearbeitung bilden sich im Bereich der Glasphase 2 Vertiefungen
4 aus, die aus einem größeren Abtrag während des Poliervorgangs resultieren.
Gleichzeitig sind Erhöhungen 5 der Keramikphase 1 zu erkennen.During the processing, 2 depressions are formed in the area of the glass phase
4, which result from a larger removal during the polishing process.
At the same time,
Nach der Bearbeitung steigt die Temperatur auf die endgültige
Anwendungstemperatur an, so daß die Glasphase 2 mit einem positiven
Wärmeausdehnungskoeffizienten entsprechend dem Ausdehnungsweg 8
expandiert und sich die Keramikphase 1, die einen negativen
Wärmeausdehnungskoeffizienten aufweist, entsprechend dem Schrumpfweg 6
bis zur Oberfläche 7 der Keramikphase zusammenzieht.After processing, the temperature rises to the final one
Application temperature so that the glass phase 2 with a positive
Thermal expansion coefficient corresponding to the
Der Verlauf der Oberfläche 7, 9 bei Anwendungstemperatur ergibt sich in der
Figur aus der Oberfläche 7 der Keramikphase bei Anwendungstemperatur und
der Oberfläche 9 der Glasphase bei Anwendungstemperatur. The course of the
- 11
- Keramikphaseceramic phase
- 22
- Glasphaseglass phase
- 33
- Oberfläche bei BearbeitungstemperaturSurface at processing temperature
- 44
- Vertiefung Glasphase bei BearbeitungstemperaturDeepening of the glass phase at processing temperature
- 55
- Erhöhung Keramikphase bei BearbeitungstemperaturIncrease ceramic phase at processing temperature
- 66
- Schrumpfweg Keramikphase nach Bearbeitungstemperatur bei AnwendungstemperaturShrink path ceramic phase after processing temperature at application temperature
- 77
- Oberfläche Keramikphase bei AnwendungstemperaturCeramic phase surface at application temperature
- 88th
- Ausdehnungsweg Glasphase nach Bearbeitungstemperatur bei AnwendungstemperaturExpansion path glass phase after processing temperature at application temperature
- 99
- Oberfläche Glasphase bei AnwendungstemperaturGlass phase surface at application temperature
Claims (6)
- Process for polishing the surface of a material which includes at least two components, each component being in communication with the surface which is to be machined, using at least one polishing wheel and a suspension at a predeterminable machining temperature, at which the components, on account of different coefficients of thermal expansion, have a different expansion state and, on account of different material-removal properties, have different material-removal rates, the processing temperature being selected in such a way that the material removed from the components is compensated for on the basis of the different expansion of the components in such a way that the surface roughness of the machined material is minimal at the temperature of use.
- Process for polishing the surface of a material which includes at least two components, each component being in communication with the surface which is to be machined, using at least one polishing wheel and a suspension at a predeterminable machining temperature, at which the components, on account of different coefficients of thermal expansion, have a different expansion state and, on account of identical material-removal properties, have identical material-removal rates, and a known temperature of use, the machining temperature being selected to be equal to the temperature of use.
- Process according to Claim 1 or 2, in which the temperature of the polishing wheel is monitored.
- Process according to one of Claims 1 to 3, in which the temperature of the suspension is monitored.
- Process according to one of Claims 1 to 4, in which the machining temperature is set by means of the suspension.
- Process according to one of Claims 1 to 5, in which the machining temperature is set by means of the polishing wheel.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10154050 | 2001-11-02 | ||
| DE10154050A DE10154050A1 (en) | 2001-11-02 | 2001-11-02 | Processing of inhomogeneous materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1308242A1 EP1308242A1 (en) | 2003-05-07 |
| EP1308242B1 true EP1308242B1 (en) | 2004-05-12 |
Family
ID=7704521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP02023996A Expired - Lifetime EP1308242B1 (en) | 2001-11-02 | 2002-10-26 | Processing of inhomogeneous material |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6875079B2 (en) |
| EP (1) | EP1308242B1 (en) |
| JP (1) | JP4406531B2 (en) |
| AT (1) | ATE266500T1 (en) |
| DE (2) | DE10154050A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8602845B2 (en) * | 2011-09-23 | 2013-12-10 | United Technologies Corporation | Strengthening by machining |
| US10183376B1 (en) * | 2015-10-20 | 2019-01-22 | Seagate Technology Llc | Carrier for mounting a bar of sliders or a stack of such bars to be lapped |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0592363A (en) * | 1991-02-20 | 1993-04-16 | Hitachi Ltd | Duplex simultaneous polishing method for base and its device, polishing method for magnetic disc base using above device and manufacture of magnetic disc and magnetic disc |
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5508235A (en) * | 1994-07-06 | 1996-04-16 | Schott Glass Technologies, Inc. | Cladding glass ceramic for use in high powered lasers |
| JP2736869B2 (en) * | 1994-11-16 | 1998-04-02 | 株式会社オハラ | Method of manufacturing magnetic disk substrate |
| US5742026A (en) * | 1995-06-26 | 1998-04-21 | Corning Incorporated | Processes for polishing glass and glass-ceramic surfaces using excimer laser radiation |
| DE69521911T2 (en) * | 1995-11-03 | 2001-11-15 | Seagate Technology Llc, Scotts Valley | UNDER CYCLICALLY CHANGED TEMPERATURES, CATHODIZED STRUCTURAL LAYERS MADE OF MATERIALS WITH A HIGH MELTING POINT |
| US5691256A (en) * | 1995-12-28 | 1997-11-25 | Yamamura Glass Co., Ltd. | Glass composition for magnetic disk substrates and magnetic disk substrate |
| US5873769A (en) * | 1997-05-30 | 1999-02-23 | Industrial Technology Research Institute | Temperature compensated chemical mechanical polishing to achieve uniform removal rates |
| DE19737849A1 (en) * | 1997-08-29 | 1999-03-11 | Siemens Ag | Device and method for heating a liquid or viscous polishing agent and device for polishing wafers |
| JP3467184B2 (en) * | 1998-02-05 | 2003-11-17 | 信越半導体株式会社 | Work polishing method |
| US6315635B1 (en) * | 1999-03-31 | 2001-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd | Method and apparatus for slurry temperature control in a polishing process |
| US6458018B1 (en) * | 1999-04-23 | 2002-10-01 | 3M Innovative Properties Company | Abrasive article suitable for abrading glass and glass ceramic workpieces |
| US6077151A (en) * | 1999-05-17 | 2000-06-20 | Vlsi Technology, Inc. | Temperature control carrier head for chemical mechanical polishing process |
-
2001
- 2001-11-02 DE DE10154050A patent/DE10154050A1/en not_active Withdrawn
-
2002
- 2002-10-26 AT AT02023996T patent/ATE266500T1/en not_active IP Right Cessation
- 2002-10-26 EP EP02023996A patent/EP1308242B1/en not_active Expired - Lifetime
- 2002-10-26 DE DE50200433T patent/DE50200433D1/en not_active Expired - Lifetime
- 2002-10-30 US US10/283,955 patent/US6875079B2/en not_active Expired - Lifetime
- 2002-10-30 JP JP2002315193A patent/JP4406531B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003176155A (en) | 2003-06-24 |
| ATE266500T1 (en) | 2004-05-15 |
| DE10154050A1 (en) | 2003-05-15 |
| US20030087591A1 (en) | 2003-05-08 |
| JP4406531B2 (en) | 2010-01-27 |
| DE50200433D1 (en) | 2004-06-17 |
| EP1308242A1 (en) | 2003-05-07 |
| US6875079B2 (en) | 2005-04-05 |
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