EP1308242A1 - Processing of inhomogeneous material - Google Patents

Processing of inhomogeneous material Download PDF

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Publication number
EP1308242A1
EP1308242A1 EP02023996A EP02023996A EP1308242A1 EP 1308242 A1 EP1308242 A1 EP 1308242A1 EP 02023996 A EP02023996 A EP 02023996A EP 02023996 A EP02023996 A EP 02023996A EP 1308242 A1 EP1308242 A1 EP 1308242A1
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EP
European Patent Office
Prior art keywords
temperature
different
processing
processing temperature
polishing
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Granted
Application number
EP02023996A
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German (de)
French (fr)
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EP1308242B1 (en
Inventor
Jörg Dipl.-Phys. Kegeler
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Schott AG
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Carl Zeiss AG
Schott Glaswerke AG
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Publication of EP1308242A1 publication Critical patent/EP1308242A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain

Definitions

  • the invention relates to a method for processing, in particular for Polishing the surface of at least two components Material.
  • a typical example of a two-component material represents the glass ceramic Zerodur®, which is a crystal phase with a negative Coefficient of thermal expansion and a glass phase with a positive Has coefficient of thermal expansion. Both phases also point different removal properties.
  • the Surface during the polishing process at a defined Machining temperature polished to a minimum polishing roughness.
  • the Polishing roughness results largely from the different Removal properties of the two components.
  • Application temperature of the material from the processing temperature deviates, it may be in addition to the polishing roughness due to the different coefficients of thermal expansion still lead to an increase the roughness due to different expansion of the two Components come, so the quality of the surface of the material is not more meets the requirements.
  • the task is solved with a processing method, in particular for polishing the surface of at least two components material with at least one polishing pad and one Suspension at a predefinable processing temperature at which the Components due to different coefficients of thermal expansion a different state of expansion and due to different Removal properties have different removal rates, the Processing temperature is chosen so that the different removal of the Components because of their different expansion each other is compensated for that the roughness of the surface of the machined Material at the application temperature is minimal.
  • the at least two components In the case of another material, it is also possible for the at least two components to have different coefficients of thermal expansion with the same removal properties.
  • the object is achieved with a method at a predeterminable processing temperature and a known application temperature, the processing temperature being chosen to be the same as the application temperature.
  • the temperature of the polishing disc conveniently also measured the suspension.
  • the processing temperature which in an advantageous embodiment of the suspension and / or Polishing wheel can be adjusted, checked and if necessary be adjusted.
  • the figure shows schematically the surface 3 to be machined during processing at a processing temperature and after processing at the previously known application temperature.
  • the processing temperature became lower than the application temperature selected.
  • the glass phase 2 has one compared to the ceramic phase 1 greater removal and a positive coefficient of thermal expansion.
  • the Ceramic phase has a negative coefficient of thermal expansion.
  • the temperature rises to the final one Application temperature so that the glass phase 2 with a positive Thermal expansion coefficient corresponding to the expansion path 8 expands and the ceramic phase 1, which is a negative Has coefficient of thermal expansion, corresponding to the shrink path 6 contracts up to surface 7 of the ceramic phase.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Glass Compositions (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

The glass ceramic material is polished at a predetermined working temperature at which erosion between the glass phase (2) and ceramic phase (1), is compensated because of different thermal expansion properties of glass and ceramic.

Description

Die Erfindung betrifft ein Verfahren zur Bearbeitung, insbesondere zum Polieren der Oberfläche eines mindestens zwei Komponenten aufweisenden Materials.The invention relates to a method for processing, in particular for Polishing the surface of at least two components Material.

Ein typisches Beispiel für einen zwei Komponenten aufweisenden Werkstoff stellt die Glaskeramik Zerodur® dar, die eine Kristallphase mit einem negativen Wärmeausdehnungskoeffizienten sowie eine Glasphase mit einem positiven Wärmeausdehnungskoeffizienten aufweist. Beide Phasen weisen zudem unterschiedliche Abtragseigenschaften auf.A typical example of a two-component material represents the glass ceramic Zerodur®, which is a crystal phase with a negative Coefficient of thermal expansion and a glass phase with a positive Has coefficient of thermal expansion. Both phases also point different removal properties.

Bei den bekannten Bearbeitungsverfahren treten während bzw. nach der Bearbeitung die nachfolgend beschriebenen Effekte auf. Zunächst wird die Oberfläche während des Poliervorgangs bei einer definierten Bearbeitungstemperatur bis zu einer minimalen Polierrauhigkeit poliert. Die Polierrauhigkeit resultiert maßgeblich aus den unterschiedlichen Abtragseigenschaften der beiden Komponenten. Da meistens die Anwendungstemperatur des Materials von der Bearbeitungstemperatur abweicht, kann es zusätzlich zu der Polierrauhigkeit aufgrund der unterschiedlichen Wärmeausdehnungskoeffizienten noch zu einer Vergrößerung der Rauhigkeit durch eine unterschiedliche Ausdehnung der beiden Komponenten kommen, so daß die Qualität der Oberfläche des Materials nicht mehr den geforderten Ansprüchen entspricht. In the known machining processes occur during or after the Editing the effects described below. First, the Surface during the polishing process at a defined Machining temperature polished to a minimum polishing roughness. The Polishing roughness results largely from the different Removal properties of the two components. Most of the time Application temperature of the material from the processing temperature deviates, it may be in addition to the polishing roughness due to the different coefficients of thermal expansion still lead to an increase the roughness due to different expansion of the two Components come, so the quality of the surface of the material is not more meets the requirements.

Kommt das Material beispielsweise für die Herstellung von Wafern zum Einsatz werden Oberflächenrauhigkeiten von < 2 Å gefordert. Dies ist bislang durch die bekannten Verfahren nicht zu erreichen.If the material comes for example for the production of wafers Surface roughness of <2 Å is required. So far this is cannot be achieved by the known methods.

Folglich ist es die Aufgabe der Erfindung, die Oberflächenqualität des mindestens zwei Komponenten aufweisenden Werkstoffs bei der Anwendungstemperatur zu verbessern.Accordingly, it is the object of the invention to improve the surface quality of the material with at least two components in the Improve application temperature.

Die Aufgabe wird mit einem Verfahren zur Bearbeitung gelöst, insbesondere zum Polieren der Oberfläche eines mindestens zwei Komponenten aufweisenden Materials mit mindestens einer Polierscheibe und einer Suspension bei einer vorgebbaren Bearbeitungstemperatur, bei der sich die Komponenten aufgrund unterschiedlicher Wärmeausdehnungskoeffizienten einen unterschiedlichen Ausdehnungszustand und aufgrund unterschiedlicher Abtragseigenschaften unterschiedliche Abtragsraten aufweisen, wobei die Bearbeitungstemperatur so gewählt wird, daß der unterschiedliche Abtrag der Komponenten aufgrund deren unterschiedlicher Ausdehnung einander so kompensiert wird, daß die Rauhigkeit der Oberfläche des bearbeiteten Materials bei der Anwendungstemperatur minimal ist.The task is solved with a processing method, in particular for polishing the surface of at least two components material with at least one polishing pad and one Suspension at a predefinable processing temperature at which the Components due to different coefficients of thermal expansion a different state of expansion and due to different Removal properties have different removal rates, the Processing temperature is chosen so that the different removal of the Components because of their different expansion each other is compensated for that the roughness of the surface of the machined Material at the application temperature is minimal.

Hierbei wird ausgehend von einer bereits zum Fertigungsprozeß bekannten späteren Anwendungstemperatur in Abhängigkeit der jeweiligen Wärmeausdehnungskoeffizienten und der jeweiligen Abtragseigenschaften der Komponenten die Bearbeitungstemperatur oberhalb oder unterhalb der Anwendungstemperatur eingestellt, und zwar so, daß sich die Vertiefungen in der Oberfläche im Bereich der Komponente mit höherem Abtrag bei der Anwendungstemperatur entsprechend ihres Wärmeausdehnungskoeffizienten ausdehnen und gleichzeitig Erhöhungen im Bereich der anderen Komponente mit niedrigerem Abtrag bei Anwendungstemperatur schrumpfen oder sich zumindest weniger stark ausdehnen. Durch diese Vorgehensweise gelingt es, bei Kenntnis der späteren Anwendungstemperatur unter Berücksichtigung der materialspezifischen Eigenschaften Abtragseigenschaften und Wärmeausdehnungskoeffizienten ein weitgehendes Einebnen der Materialoberfläche bei der Anwendungstemperatur zu, erzielen.This is based on one already known for the manufacturing process later application temperature depending on the respective Coefficient of thermal expansion and the respective abrasion properties of the Components the processing temperature above or below the Set application temperature, so that the wells in the surface in the area of the component with higher removal at Application temperature according to its coefficient of thermal expansion expand and at the same time increases in the area of the other component shrink or shrink with lower stock removal at application temperature expand at least less. By doing this, with knowledge of the later application temperature taking into account the material specific properties removal properties and Thermal expansion coefficients an extensive leveling of the Material surface at the application temperature.

Bei einem anderen Werkstoff ist es auch möglich, daß die mindestens zwei Komponenten unterschiedliche Wärmeausdehnungskoeffizienten bei jedoch gleichen Abtragseigenschaften aufweisen.
Hierbei wird die Aufgabe mit einem Verfahren bei einer vorgebbaren Bearbeitungstemperatur und einer bekannten Anwendungstemperatur gelöst, wobei die Bearbeitungstemperatur gleich der Anwendungstemperatur gewählt wird.In the case of another material, it is also possible for the at least two components to have different coefficients of thermal expansion with the same removal properties.
Here, the object is achieved with a method at a predeterminable processing temperature and a known application temperature, the processing temperature being chosen to be the same as the application temperature.

Während der Bearbeitung stellt sich bei gleichen Abtragsverhalten der Komponenten eine optimierte Oberflächenrauhigkeit ein, die bei einer anderen Anwendungstemperatur als der Bearbeitungstemperatur durch die unterschiedlichen Wärmeausdehnungskoeffizienten und die damit verbundenen unterschiedlichen Ausdehnungen der Komponenten zu einer Verschlechterung der Oberflächenrauhigkeit führt.During machining, the same removal behavior arises Components an optimized surface roughness, that of another Application temperature than the processing temperature by the different coefficients of thermal expansion and the associated different expansion of the components to a deterioration of surface roughness.

In einer besonderen Ausgestaltung wird die Temperatur der Polierscheibe, günstigerweise auch der Suspension, gemessen.In a special embodiment, the temperature of the polishing disc, conveniently also measured the suspension.

Mit Hilfe dieser Vorgehensweise kann die Bearbeitungstemperatur, welche in einer vorteilhaften Ausführungsform über die Suspension und/oder die Polierscheibe eingestellt werden kann, kontrolliert und gegebenenfalls angeglichen werden.Using this procedure, the processing temperature, which in an advantageous embodiment of the suspension and / or Polishing wheel can be adjusted, checked and if necessary be adjusted.

In der nachfolgenden einzigen Figur wird die Erfindung beispielhaft näher erläutert. The invention is illustrated by way of example in the following single figure explained.

Dabei zeigt die Figur schematisch die zu bearbeitende Oberfläche 3 während der Bearbeitung bei einer Bearbeitungstemperatur sowie nach der Bearbeitung bei der bereits vorher bekannten Anwendungstemperatur. In der vorliegenden Figur wurde die Bearbeitungstemperatur kleiner als die Anwendungstemperatur gewählt. Außerdem weist die Glasphase 2 gegenüber der Keramikphase 1 einen größeren Abtrag und einen positiven Wärmeausdehnungskoeffizienten auf. Die Keramikphase hat einen negativen Wärmeausdehnungskoeffizienten.The figure shows schematically the surface 3 to be machined during processing at a processing temperature and after processing at the previously known application temperature. In the present Figure, the processing temperature became lower than the application temperature selected. In addition, the glass phase 2 has one compared to the ceramic phase 1 greater removal and a positive coefficient of thermal expansion. The Ceramic phase has a negative coefficient of thermal expansion.

Während der Bearbeitung bilden sich im Bereich der Glasphase 2 Vertiefungen 4 aus, die aus einem größeren Abtrag während des Poliervorgangs resultieren. Gleichzeitig sind Erhöhungen 5 der Keramikphase 1 zu erkennen.During the processing, 2 depressions are formed in the area of the glass phase 4, which result from a larger removal during the polishing process. At the same time, elevations 5 of the ceramic phase 1 can be seen.

Nach der Bearbeitung steigt die Temperatur auf die endgültige Anwendungstemperatur an, so daß die Glasphase 2 mit einem positiven Wärmeausdehnungskoeffizienten entsprechend dem Ausdehnungsweg 8 expandiert und sich die Keramikphase 1, die einen negativen Wärmeausdehnungskoeffizienten aufweist, entsprechend dem Schrumpfweg 6 bis zur Oberfläche 7 der Keramikphase zusammenzieht.After processing, the temperature rises to the final one Application temperature so that the glass phase 2 with a positive Thermal expansion coefficient corresponding to the expansion path 8 expands and the ceramic phase 1, which is a negative Has coefficient of thermal expansion, corresponding to the shrink path 6 contracts up to surface 7 of the ceramic phase.

Der Verlauf der Oberfläche 7, 9 bei Anwendungstemperatur ergibt sich in der Figur aus der Oberfläche 7 der Keramikphase bei Anwendungstemperatur und der Oberfläche 9 der Glasphase bei Anwendungstemperatur. The course of the surface 7, 9 at the application temperature results in the Figure from the surface 7 of the ceramic phase at the application temperature and the surface 9 of the glass phase at the application temperature.

BezugszeichenlisteLIST OF REFERENCE NUMBERS

11
Keramikphaseceramic phase
22
Glasphaseglass phase
33
Oberfläche bei BearbeitungstemperaturSurface at processing temperature
44
Vertiefung Glasphase bei BearbeitungstemperaturDeepening of the glass phase at processing temperature
55
Erhöhung Keramikphase bei BearbeitungstemperaturIncrease ceramic phase at processing temperature
66
Schrumpfweg Keramikphase nach Bearbeitungstemperatur bei AnwendungstemperaturShrink path ceramic phase after processing temperature at application temperature
77
Oberfläche Keramikphase bei AnwendungstemperaturCeramic phase surface at application temperature
88th
Ausdehnungsweg Glasphase nach Bearbeitungstemperatur bei AnwendungstemperaturExpansion path glass phase after processing temperature at application temperature
99
Oberfläche Glasphase bei AnwendungstemperaturGlass phase surface at application temperature

Claims (6)

Verfahren zum Polieren der Oberfläche eines mindestens zwei Komponenten aufweisenden Materials, wobei jede Komponente in Verbindung mit der zu bearbeitenden Oberfläche steht, mit mindestens einer Polierscheibe und einer Suspension bei einer vorgebbaren Bearbeitungstemperatur, bei der die Komponenten aufgrund unterschiedlicher Wärmeausdehnungskoeffizienten einen unterschiedlichen Ausdehnungszustand und aufgrund unterschiedlicher Abtragseigenschaften unterschiedliche Abtragsraten aufweisen, wobei die Bearbeitungstemperatur so gewählt wird, daß der Abtrag der Komponenten aufgrund deren unterschiedlicher Ausdehnung einander so kompensiert wird, daß die Rauhigkeit der Oberfläche des bearbeiteten Materials bei der Anwendungstemperatur minimal ist.Process for polishing the surface of at least two Component material, each component in Connected to the surface to be machined, with at least a polishing disc and a suspension for a predefinable one Processing temperature at which the components are due different coefficients of thermal expansion different state of expansion and due to different Removal properties have different removal rates, wherein the processing temperature is chosen so that the removal of the Components because of their different expansion each other is compensated for that the roughness of the surface of the machined Material at the application temperature is minimal. Verfahren zum Polieren, der Oberfläche eines mindestens zwei Komponenten aufweisenden Materials, wobei jede Komponente in Verbindung mit der zu bearbeitenden Oberfläche steht, mit mindestens einer Polierscheibe und einer Suspension bei einer vorgebbaren Bearbeitungstemperatur, bei der die Komponenten aufgrund unterschiedlicher Wärmeausdehnungskoeffizienten einen unterschiedlichen Ausdehnungszustand und aufgrund identischer Abtragseigenschaften identische Abtragsraten aufweisen, und einer bekannten Anwendungstemperatur, wobei die Bearbeitungstemperatur gleich der Anwendungstemperatur gewählt wird.Process for polishing the surface of at least two Component material, each component is in connection with the surface to be processed, with at least one polishing pad and a suspension in one Predeterminable processing temperature at which the components due to different coefficients of thermal expansion a different state of expansion and due to identical removal properties identical removal rates have, and a known application temperature, wherein the processing temperature is equal to the application temperature is chosen. Verfahren nach Anspruch 1 oder 2, bei dem die Temperatur der Polierscheibe kontrolliert wird. The method of claim 1 or 2, wherein the temperature of the Polishing disc is checked. Verfahren nach einem der Ansprüche 1 bis 3, bei dem die Temperatur der Suspension kontrolliert wird.Method according to one of claims 1 to 3, wherein the temperature the suspension is checked. Verfahren nach einem der Ansprüche 1 bis 4, bei dem die Bearbeitungstemperatur über die Suspension eingestellt wird.Method according to one of claims 1 to 4, wherein the Processing temperature is set via the suspension. Verfahren nach einem der Ansprüche 1 bis 5, bei dem die Bearbeitungstemperatur über die Polierscheibe eingestellt wird.Method according to one of claims 1 to 5, wherein the Processing temperature is set via the polishing disc.
EP02023996A 2001-11-02 2002-10-26 Processing of inhomogeneous material Expired - Lifetime EP1308242B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10154050 2001-11-02
DE10154050A DE10154050A1 (en) 2001-11-02 2001-11-02 Processing of inhomogeneous materials

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EP1308242B1 EP1308242B1 (en) 2004-05-12

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US (1) US6875079B2 (en)
EP (1) EP1308242B1 (en)
JP (1) JP4406531B2 (en)
AT (1) ATE266500T1 (en)
DE (2) DE10154050A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8602845B2 (en) * 2011-09-23 2013-12-10 United Technologies Corporation Strengthening by machining
US10183376B1 (en) * 2015-10-20 2019-01-22 Seagate Technology Llc Carrier for mounting a bar of sliders or a stack of such bars to be lapped

Citations (3)

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US5364655A (en) * 1991-02-20 1994-11-15 Hitachi Ltd. Simultaneous double sides polishing method
US5868953A (en) * 1994-11-16 1999-02-09 Kabushiki Kaisya Ohara Method for manufacturing a magnetic disk substrate
EP0934801A2 (en) * 1998-02-05 1999-08-11 Shin-Etsu Handotai Company Limited Method and apparatus for polishing work

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US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5508235A (en) * 1994-07-06 1996-04-16 Schott Glass Technologies, Inc. Cladding glass ceramic for use in high powered lasers
US5742026A (en) * 1995-06-26 1998-04-21 Corning Incorporated Processes for polishing glass and glass-ceramic surfaces using excimer laser radiation
JPH10512386A (en) * 1995-11-03 1998-11-24 シーゲート テクノロジー，インコーポレイテッド Sputtered, thermally cycled tissue layer made of high melting point material
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Publication number Priority date Publication date Assignee Title
US5364655A (en) * 1991-02-20 1994-11-15 Hitachi Ltd. Simultaneous double sides polishing method
US5868953A (en) * 1994-11-16 1999-02-09 Kabushiki Kaisya Ohara Method for manufacturing a magnetic disk substrate
EP0934801A2 (en) * 1998-02-05 1999-08-11 Shin-Etsu Handotai Company Limited Method and apparatus for polishing work

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US6875079B2 (en) 2005-04-05
DE10154050A1 (en) 2003-05-15
JP2003176155A (en) 2003-06-24
EP1308242B1 (en) 2004-05-12
JP4406531B2 (en) 2010-01-27
DE50200433D1 (en) 2004-06-17
US20030087591A1 (en) 2003-05-08
ATE266500T1 (en) 2004-05-15

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