EP1261033B1 - Structure inductive sur puce - Google Patents

Structure inductive sur puce Download PDF

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Publication number
EP1261033B1
EP1261033B1 EP02253571A EP02253571A EP1261033B1 EP 1261033 B1 EP1261033 B1 EP 1261033B1 EP 02253571 A EP02253571 A EP 02253571A EP 02253571 A EP02253571 A EP 02253571A EP 1261033 B1 EP1261033 B1 EP 1261033B1
Authority
EP
European Patent Office
Prior art keywords
push
inductors
inductor
pull amplifier
amplifier according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP02253571A
Other languages
German (de)
English (en)
Other versions
EP1261033A2 (fr
EP1261033A3 (fr
Inventor
John Nielsen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Oyj
Original Assignee
Nokia Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Oyj filed Critical Nokia Oyj
Priority to EP06114148A priority Critical patent/EP1713125A1/fr
Publication of EP1261033A2 publication Critical patent/EP1261033A2/fr
Publication of EP1261033A3 publication Critical patent/EP1261033A3/fr
Application granted granted Critical
Publication of EP1261033B1 publication Critical patent/EP1261033B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0046—Printed inductances with a conductive path having a bridge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to push-pull amplifier including a substrate, load inductors comprising first and second spiral inductors connected in series at a node and formed on the substrate, first and second output points connected respectively to the first and second inductors and a power supply line connected to said node.
  • inductive components for radio circuits operating at VHF and UHF frequencies were made by forming copper wire into self-supporting helices.
  • inductor designs employing planar spiral forms.
  • Certain inductor designs require two coils, wound in the same sense, to be connected in series and share a common magnetic circuit.
  • a push-pull amplifier including a substrate; spiralling output inductor means formed on the substrate and comprising first and second spiral load inductors connected in series at a node and spiralling inwards in opposite senses from side-by-side positions about a common centre in substantially the same plane to said node; a power supply line connected to said node; and first and second output points connected respectively to the first and second inductors.
  • a push-pull amplifier 1 comprises a first and second transistors 2, 3 and a pair of load inductors 4, 5 connected between the collectors 7, 8 of respective transistors 2, 3 and a positive voltage line 6. The amplifier's output is taken between the collectors of the transistors 2, 3.
  • the load inductors 4, 5 together form a generally square inductive structure.
  • the inductors' ends, which are connected to the collectors 7, 8, are close together centrally on one side of the structure.
  • the output is taken by peripheral paths 10, 11 around the load inductors 4, 5 to points 13, 14 opposite the collector nodes.
  • the inductors 4, 5 spiral in opposite senses to the centre of the inductive structure.
  • the spiral paths of the inductors 4, 5 are squared, stepping in twice in each turn at points 180° apart. These points are located on an axis extending between the collector connections and the output points 13, 14.
  • Figure 2 shows 3 turns in each of the inductors 4, 5 and it will be appreciated that there may be many more in practice.
  • the paths of the inductors 4, 5 cross each other where they step in.
  • the first inductor 4 passes under the second inductor 5 and, on the other side of the inductive structure, the second inductor passes 5 passes under the first inductor 4.
  • the positive voltage line 6 passes under the inductive structure and is connected to the central point where the first and second inductors 4, 5 meet.
  • the inductive structure is formed on a silicon substrate 20.
  • a first SiO 2 layer 21a is formed on the substrate 20 and then partially etched through to form troughs for the underpasses of the inductors 4, 5 and the positive voltage line 6.
  • Metal 22, e.g. Al or Cu, is deposited in the troughs and a second SiO 2 layer 21b is formed over the metal 22 and the first SiO 2 layer 21a.
  • the second SiO 2 layer 21b is then etched to form vias at either end of the troughs and metal 23 is deposited in the vias.
  • metal 24 is deposited to connect the vias to form the inductors 4, 5 and the peripheral paths 10, 11.

Claims (8)

  1. Amplificateur symétrique comprenant :
    un substrat (20) ;
    des moyens de bobine d'induction de sortie en spirale (4, 5) formé sur le substrat (20), comprenant des première et seconde bobines d'induction de charge en spirale (4, 5) connectées en série au niveau d'un noeud (6) et enroulées en spirale vers l'intérieur dans des sens opposés à partir de positions de départ côte à côte (13, 14) autour d'un centre commun, sensiblement sur le même plan par rapport audit noeud (6) ;
    une ligne d'alimentation électrique connectée audit noeud (6) ; et
    des premier et second points de sortie (7, 8) connectés respectivement aux première et seconde bobines d'induction (4, 5).
  2. Amplificateur symétrique selon la revendication 1, comprenant des trajets de signal de, sortie selon des circuits périphériques autour des moitiés respectives des bobines d'induction de charge (3, 4).
  3. Amplificateur symétrique selon la revendication 1 ou 2, dans lequel la première bobine d'induction (4) passe alternativement sur et sous la seconde bobine d'induction (5) au fur et à mesure qu'elle s'enroule en spirale autour dudit centre.
  4. Amplificateur symétrique selon la revendication 3, dans lequel la première bobine d'induction (4) passe sous la seconde bobine d'induction (5) dans un creux formé dans une couche diélectrique (21a, 21b) sur le substrat (20).
  5. Amplificateur symétrique selon la revendication 3 ou 4, dans lequel l'enroulement en spirale des bobines d'induction (4, 5) est provoqué par des transitions de trajet vers l'intérieur où la première bobine d'induction (4) passe sur ou sous la seconde bobine d'induction (5).
  6. Amplificateur symétrique selon l'une quelconque des revendications précédentes, dans lequel les spires des bobines d'induction sont sensiblement rectangulaires.
  7. Amplificateur symétrique selon la revendication 6, dans lequel lesdites spires sont sensiblement carrées.
  8. Amplificateur symétrique selon l'une quelconque des revendications précédentes, dans lequel les première et seconde bobines d'induction (3, 4) présentent ensemble au moins un certain degré de symétrie miroir, dans une mesure substantielle, le long d'une ligne dans ledit plan.
EP02253571A 2001-05-24 2002-05-21 Structure inductive sur puce Expired - Fee Related EP1261033B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06114148A EP1713125A1 (fr) 2001-05-24 2002-05-21 Structure inductive sur puce

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29291201P 2001-05-24 2001-05-24
US292912P 2001-05-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP06114148A Division EP1713125A1 (fr) 2001-05-24 2002-05-21 Structure inductive sur puce

Publications (3)

Publication Number Publication Date
EP1261033A2 EP1261033A2 (fr) 2002-11-27
EP1261033A3 EP1261033A3 (fr) 2004-07-14
EP1261033B1 true EP1261033B1 (fr) 2006-08-30

Family

ID=23126778

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02253571A Expired - Fee Related EP1261033B1 (fr) 2001-05-24 2002-05-21 Structure inductive sur puce

Country Status (3)

Country Link
US (1) US6867677B2 (fr)
EP (1) EP1261033B1 (fr)
DE (1) DE60214280T2 (fr)

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US6791159B2 (en) * 2002-06-03 2004-09-14 Sumitomo Electric Industries, Ltd. Optical module
US6967555B2 (en) * 2002-10-17 2005-11-22 Via Technologies Inc. Multi-level symmetrical inductor
FR2851078A1 (fr) * 2003-02-07 2004-08-13 St Microelectronics Sa Inductance integree et circuit electronique l'incorporant
US7400025B2 (en) * 2003-05-21 2008-07-15 Texas Instruments Incorporated Integrated circuit inductor with integrated vias
US7095307B1 (en) * 2003-07-17 2006-08-22 Broadcom Corporation Fully differential, high Q, on-chip, impedance matching section
KR101005264B1 (ko) * 2003-07-26 2011-01-04 삼성전자주식회사 대칭형 인덕터 소자
US7042326B2 (en) * 2004-01-11 2006-05-09 United Microelectronics Corp. Symmetrical inductor
TWI238515B (en) * 2004-10-08 2005-08-21 Winbond Electronics Corp Integrated transformer with stack structure
KR100698617B1 (ko) * 2005-02-15 2007-03-21 삼성전자주식회사 집적 인덕터를 포함한 집적회로
US7511588B2 (en) * 2005-07-19 2009-03-31 Lctank Llc Flux linked LC tank circuits forming distributed clock networks
US7508280B2 (en) * 2005-07-19 2009-03-24 Lc Tank Llc Frequency adjustment techniques in coupled LC tank circuits
US7786836B2 (en) * 2005-07-19 2010-08-31 Lctank Llc Fabrication of inductors in transformer based tank circuitry
US7761078B2 (en) * 2006-07-28 2010-07-20 Qualcomm Incorporated Dual inductor circuit for multi-band wireless communication device
US8219060B2 (en) 2006-07-28 2012-07-10 Qualcomm Incorporated Dual inductor circuit for multi-band wireless communication device
TWI341538B (en) * 2007-01-24 2011-05-01 Via Tech Inc Symmetrical differential inductor
CN101090033B (zh) * 2007-05-17 2010-06-02 威盛电子股份有限公司 对称式差动电感结构
TW200926218A (en) * 2007-12-10 2009-06-16 Ind Tech Res Inst Planar-like inductor coupling structure
WO2009125324A1 (fr) * 2008-04-10 2009-10-15 Nxp B.V. Inducteur en forme de 8
CN101630584A (zh) * 2009-06-17 2010-01-20 上海集成电路研发中心有限公司 片上中心抽头差分电感
US8643461B2 (en) * 2011-04-28 2014-02-04 Globalfoundries Singapore Pte. Ltd. Integrated transformer
JP6221736B2 (ja) * 2013-12-25 2017-11-01 三菱電機株式会社 半導体装置
US9653204B2 (en) 2015-01-22 2017-05-16 Globalfoundries Inc. Symmetric multi-port inductor for differential multi-band RF circuits
US10658847B2 (en) 2015-08-07 2020-05-19 Nucurrent, Inc. Method of providing a single structure multi mode antenna for wireless power transmission using magnetic field coupling
US10063100B2 (en) 2015-08-07 2018-08-28 Nucurrent, Inc. Electrical system incorporating a single structure multimode antenna for wireless power transmission using magnetic field coupling
US11205848B2 (en) 2015-08-07 2021-12-21 Nucurrent, Inc. Method of providing a single structure multi mode antenna having a unitary body construction for wireless power transmission using magnetic field coupling
KR102162333B1 (ko) * 2017-03-22 2020-10-07 한국전자통신연구원 차동 인덕터 및 이를 포함하는 반도체 소자

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Also Published As

Publication number Publication date
DE60214280D1 (de) 2006-10-12
DE60214280T2 (de) 2007-04-19
EP1261033A2 (fr) 2002-11-27
EP1261033A3 (fr) 2004-07-14
US20020175799A1 (en) 2002-11-28
US6867677B2 (en) 2005-03-15

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