EP1258065A4 - Laser de forte puissance, en guide d'ondes a arete a retroaction repartie - Google Patents

Laser de forte puissance, en guide d'ondes a arete a retroaction repartie

Info

Publication number
EP1258065A4
EP1258065A4 EP01920104A EP01920104A EP1258065A4 EP 1258065 A4 EP1258065 A4 EP 1258065A4 EP 01920104 A EP01920104 A EP 01920104A EP 01920104 A EP01920104 A EP 01920104A EP 1258065 A4 EP1258065 A4 EP 1258065A4
Authority
EP
European Patent Office
Prior art keywords
laser diode
semiconductor laser
waveguide region
ridge structure
distributed feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01920104A
Other languages
German (de)
English (en)
Other versions
EP1258065A1 (fr
Inventor
Joseph H Abeles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trumpf Photonics Inc
Original Assignee
Trumpf Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics Inc filed Critical Trumpf Photonics Inc
Publication of EP1258065A1 publication Critical patent/EP1258065A1/fr
Publication of EP1258065A4 publication Critical patent/EP1258065A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31—Digital deflection, i.e. optical switching
    • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31—Digital deflection, i.e. optical switching
    • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3137—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/2682—Time delay steered arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  in optical waveguides, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/05—Function characteristic wavelength dependent
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/15—Function characteristic involving resonance effects, e.g. resonantly enhanced interaction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/58—Multi-wavelength, e.g. operation of the device at a plurality of wavelengths
    • G02F2203/585—Add/drop devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Definitions

  • the present invention relates to a ridge waveguide (RWG) semiconductor laser diode
  • FIG. 1 shows the RIN performance achieved and 300 MHz
  • High-power ridge waveguide (RWG) lasers use a cold-cavity index, i.e., effective
  • antiguiding Although antiguiding is quantitatively difficult to estimate accurately and is
  • the width limits the power that can be achieved by the laser for several reasons: Firstly, the
  • any RWG laser such as a DFB RWG
  • a semiconductor laser diode comprises a body of a semiconductor material having a
  • the diode also includes a distributed feedback structure associated with at
  • the width of the ridge can be
  • FIG. 1 is a graph plotting linewidth vs. power output of a prior art broadened
  • FIG. 2 is a graph plotting power output vs. injection current of a prior art broadened
  • FIG. 3 is a perspective view of a DFB RWG semiconductor laser diode according to an exemplary embodiment of the present invention.
  • FIG. 3 there is shown a DFB RWG semiconductor laser diode 10
  • the laser diode 10 comprises a body 12 of a semiconductor material or materials having a bottom surface 14,
  • the body 12 includes a waveguide
  • the active region 24 may be of any structure well known in the laser diode art which is
  • the active region 24 comprises one or more quantum wells.
  • the waveguide region 22 includes a
  • the first and second layers 25 and 26 of undoped semiconductor material have a
  • doping level of no greater than about 5X10 16 atoms/cm 3 .
  • a first clad region 28 is disposed on the first side of the waveguide region 22.
  • first clad region 28 may be composed of a semiconductor material of a P-type conductivity.
  • the first clad region 28 is etched so as expose portions
  • a distributed feedback structure formed by corrugations 33, is etched in
  • the doping level in the first and second clad regions 28 and 30 are typically between about 5X10 17 atoms/cm 3 and 2X10 19 atoms/cm 3 .
  • a contact layer 32 of a conductive material, such as a metal, is on and in ohmic
  • the contact layer 32 is in
  • the contact layer 34 extends across the
  • the thickness of the waveguide region 22 and the composition of the waveguide are The thickness of the waveguide region 22 and the composition of the waveguide
  • active region 24 does not overlap from the waveguide region 22 into the more heavily doped
  • clad regions 28 and 30 by more than 5%, and preferably by not more than 2%.
  • the clad regions 28 and 30 by more than 5%, and preferably by not more than 2%.
  • the amount of overlap of the photons into the clad regions 28 and 30 need not be less than 1%. This means that the amount of the optical mode, which is mainly in the waveguide region
  • the thickness of the waveguide region should be at least
  • the various regions of the body 12 may be made of any of the well known semiconductor materials used for making laser
  • diode such as but not limited to gallium arsenide, aluminum gallium arsenide, indium
  • 30 may be doped uniformly throughout their thickness or may be graded with little or no
  • the laser diode 10 of the present invention can be made longer than conventional
  • laser diodes i.e., in lengths of substantially 3 millimeters or longer, because there is lower
  • semiconductor material surrounding the ridge structure 31 is substantially reduced to between about 0.0007 and 0.002. This, in turn, permits width Wof the ridge to be

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne une diode laser (10) semi-conductrice en guide d'ondes à arête à rétroaction répartie, comportant une région de guide d'ondes (22) d'épaisseur classique d'au moins 500 nanomètres et dont la différence d'indice de réfraction entre la structure en arête (31) et les parties exposées de la région en guide d'ondes (25) est inférieure à 0,001. La largeur (W) de l'arête (31) peut être ainsi augmentée au delà de 3,5 microns ce qui permet un passage direct aux sorties de forte puissance à des longueurs d'ondes de 1,55 νm, où la diffusion et l'échauffement de porteurs limitent la densité de courant injectée dans la région active (24).
EP01920104A 2000-01-20 2001-01-22 Laser de forte puissance, en guide d'ondes a arete a retroaction repartie Withdrawn EP1258065A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17691500P 2000-01-20 2000-01-20
US176915P 2000-01-20
PCT/US2001/002019 WO2001054240A1 (fr) 2000-01-20 2001-01-22 Laser de forte puissance, en guide d'ondes a arete a retroaction repartie

Publications (2)

Publication Number Publication Date
EP1258065A1 EP1258065A1 (fr) 2002-11-20
EP1258065A4 true EP1258065A4 (fr) 2006-08-30

Family

ID=22646416

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01920104A Withdrawn EP1258065A4 (fr) 2000-01-20 2001-01-22 Laser de forte puissance, en guide d'ondes a arete a retroaction repartie

Country Status (5)

Country Link
EP (1) EP1258065A4 (fr)
JP (1) JP2003520455A (fr)
AU (3) AU2001247192A1 (fr)
CA (1) CA2398833A1 (fr)
WO (3) WO2001055814A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7853108B2 (en) 2006-12-29 2010-12-14 Massachusetts Institute Of Technology Fabrication-tolerant waveguides and resonators
WO2009055440A2 (fr) 2007-10-22 2009-04-30 Massachusetts Institute Of Technology Guidage d'ondes de bloch à faible perte dans des structures ouvertes et réseaux de croisement de guides d'onde efficaces extrêmement compacts
US7920770B2 (en) 2008-05-01 2011-04-05 Massachusetts Institute Of Technology Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal
WO2010065710A1 (fr) * 2008-12-03 2010-06-10 Massachusetts Institute Of Technology Modulateurs optiques résonants

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818860A (en) * 1996-11-27 1998-10-06 David Sarnoff Research Center, Inc. High power semiconductor laser diode

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4696059A (en) * 1984-03-07 1987-09-22 Canadian Patents And Development Limited-Societe Canadienne Des Brevets Et D'exploitation Limitee Reflex optoelectronic switching matrix
US4622673A (en) * 1984-05-24 1986-11-11 At&T Bell Laboratories Heteroepitaxial ridge overgrown laser
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
DE3506569A1 (de) * 1985-02-25 1986-08-28 Manfred Prof. Dr. 7900 Ulm Börner Integrierte resonatormatrix zum wellenlaengenselektiven trennen bzw. zusammenfuegen von kanaelen im frequenzbereich der optischen nachrichtentechnik
US4709978A (en) * 1986-02-21 1987-12-01 Bell Communications Research, Inc. Mach-Zehnder integrated optical modulator
US5189679A (en) * 1991-09-06 1993-02-23 The Boeing Company Strained quantum well laser for high temperature operation
DE4142922A1 (de) * 1991-12-24 1993-07-01 Bosch Gmbh Robert Bauelement zur verwendung bei der uebertragung optischer signale
US5291565A (en) * 1992-06-30 1994-03-01 Hughes Aircraft Company Broad band, low power electro-optic modulator apparatus and method with segmented electrodes
US5544268A (en) * 1994-09-09 1996-08-06 Deacon Research Display panel with electrically-controlled waveguide-routing
JP3540508B2 (ja) * 1996-05-14 2004-07-07 古河電気工業株式会社 リッジ導波路型半導体レーザダイオード
US6101300A (en) * 1997-06-09 2000-08-08 Massachusetts Institute Of Technology High efficiency channel drop filter with absorption induced on/off switching and modulation
US6195187B1 (en) * 1998-07-07 2001-02-27 The United States Of America As Represented By The Secretary Of The Air Force Wavelength-division multiplexed M×N×M cross-connect switch using active microring resonators
JP2000066156A (ja) * 1998-08-25 2000-03-03 Mitsubishi Electric Corp マッハツェンダ型光変調器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818860A (en) * 1996-11-27 1998-10-06 David Sarnoff Research Center, Inc. High power semiconductor laser diode

Also Published As

Publication number Publication date
WO2001053881A1 (fr) 2001-07-26
WO2001055814A2 (fr) 2001-08-02
EP1258065A1 (fr) 2002-11-20
WO2001055814A3 (fr) 2002-02-07
CA2398833A1 (fr) 2001-07-26
WO2001054240A1 (fr) 2001-07-26
AU2001247192A1 (en) 2001-07-31
AU2001241424A1 (en) 2001-07-31
AU2001262901A1 (en) 2001-08-07
JP2003520455A (ja) 2003-07-02

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