EP1196947A4 - Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method - Google Patents
Surface planarization of thin silicon films during and after processing by the sequential lateral solidification methodInfo
- Publication number
- EP1196947A4 EP1196947A4 EP00919501A EP00919501A EP1196947A4 EP 1196947 A4 EP1196947 A4 EP 1196947A4 EP 00919501 A EP00919501 A EP 00919501A EP 00919501 A EP00919501 A EP 00919501A EP 1196947 A4 EP1196947 A4 EP 1196947A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- laser pulses
- thin film
- polycrystalline
- single crystal
- crystal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 80
- 238000007711 solidification Methods 0.000 title claims abstract description 29
- 230000008023 solidification Effects 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 29
- 229910052710 silicon Inorganic materials 0.000 title claims description 28
- 239000010703 silicon Substances 0.000 title claims description 28
- 238000012545 processing Methods 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 claims abstract description 67
- 239000013078 crystal Substances 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 44
- 238000013519 translation Methods 0.000 claims abstract description 27
- 230000008018 melting Effects 0.000 claims abstract description 16
- 238000002844 melting Methods 0.000 claims abstract description 16
- 230000003746 surface roughness Effects 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 230000008602 contraction Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 230000014616 translation Effects 0.000 description 20
- 239000010408 film Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012805 post-processing Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
- B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2000/007479 WO2001071791A1 (en) | 2000-03-21 | 2000-03-21 | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1196947A1 EP1196947A1 (en) | 2002-04-17 |
EP1196947A4 true EP1196947A4 (en) | 2003-08-13 |
Family
ID=21741175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00919501A Withdrawn EP1196947A4 (en) | 2000-03-21 | 2000-03-21 | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP1196947A4 (en) |
JP (1) | JP4220156B2 (en) |
KR (1) | KR100672909B1 (en) |
CN (1) | CN1186802C (en) |
AU (1) | AU2000240180A1 (en) |
CA (1) | CA2374498A1 (en) |
HK (1) | HK1046469A1 (en) |
MX (1) | MXPA01011852A (en) |
TW (1) | TW499717B (en) |
WO (1) | WO2001071791A1 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
KR100333275B1 (en) * | 1999-05-20 | 2002-04-24 | 구본준, 론 위라하디락사 | TFT of LCD device and the same methode |
US7156916B2 (en) | 2002-04-23 | 2007-01-02 | Sharp Laboratories Of America, Inc. | Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making |
US6860939B2 (en) | 2002-04-23 | 2005-03-01 | Sharp Laboratories Of America, Inc. | Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making |
US7135070B2 (en) | 2002-04-23 | 2006-11-14 | Sharp Laboratories Of America, Inc. | Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making |
US7128783B2 (en) | 2002-04-23 | 2006-10-31 | Sharp Laboratories Of America, Inc. | Thin-film crystal-structure-processed mechanical devices, and methods and systems for making |
US7125451B2 (en) | 2002-04-23 | 2006-10-24 | Sharp Laboratories Of America, Inc. | Crystal-structure-processed mechanical devices and methods and systems for making |
CN1757093A (en) | 2002-08-19 | 2006-04-05 | 纽约市哥伦比亚大学托管会 | Single-shot semiconductor processing system and method having various irradiation patterns |
JP4873858B2 (en) * | 2002-08-19 | 2012-02-08 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Method and apparatus for laser crystallization processing of film region of substrate and structure of such film region to minimize edge region |
TWI359441B (en) | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
JP2005129769A (en) | 2003-10-24 | 2005-05-19 | Hitachi Ltd | Method for modifying semiconductor thin film, modified semiconductor thin film, method for evaluating the same, thin film transistor formed of semiconductor thin film, and image display device having circuit constituted by using the thin film transistor |
JP2007165716A (en) | 2005-12-15 | 2007-06-28 | Advanced Lcd Technologies Development Center Co Ltd | Laser crystallizing apparatus and method |
JP2009032969A (en) * | 2007-07-27 | 2009-02-12 | Sharp Corp | Apparatus of manufacturing semiconductor thin film, method of the same, and semiconductor thin film and semiconductor device produced by the method |
KR20100074193A (en) | 2007-09-21 | 2010-07-01 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
CN101919058B (en) | 2007-11-21 | 2014-01-01 | 纽约市哥伦比亚大学理事会 | Systems and methods for preparation of epitaxially textured thick films |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
CN103745925A (en) * | 2013-11-14 | 2014-04-23 | 上海和辉光电有限公司 | Planarization polysilicon film manufacturing method |
US20160074968A1 (en) * | 2014-09-11 | 2016-03-17 | Suss Microtec Photonic Systems Inc. | Laser etching system including mask reticle for multi-depth etching |
TWI577488B (en) * | 2014-11-17 | 2017-04-11 | 財團法人工業技術研究院 | Surface processing method |
CN104779139A (en) * | 2015-03-31 | 2015-07-15 | 深超光电(深圳)有限公司 | Manufacturing method of semi-conductor thin film and manufacturing method of thin film transistor |
CN106298451A (en) * | 2016-08-18 | 2017-01-04 | 昆山国显光电有限公司 | Laser crystallization method and device |
JP7152426B2 (en) * | 2018-01-24 | 2022-10-12 | ギガフォトン株式会社 | Laser processing method and laser processing system |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4970546A (en) * | 1988-04-07 | 1990-11-13 | Nikon Corporation | Exposure control device |
JPH0433327A (en) * | 1990-05-30 | 1992-02-04 | Kyocera Corp | Forming method of semiconductor ctystallized film |
US5145808A (en) * | 1990-08-22 | 1992-09-08 | Sony Corporation | Method of crystallizing a semiconductor thin film |
EP0655774A2 (en) * | 1993-11-02 | 1995-05-31 | Sony Corporation | Method of forming polycrystalline silicon layer and surface treatment apparatus therefor |
EP0681316A2 (en) * | 1994-05-02 | 1995-11-08 | Sony Corporation | Method of processing a thin film on a substrate for display |
US5496768A (en) * | 1993-12-03 | 1996-03-05 | Casio Computer Co., Ltd. | Method of manufacturing polycrystalline silicon thin film |
WO1997045827A1 (en) * | 1996-05-28 | 1997-12-04 | The Trustees Of Columbia University In The City Of New York | Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
US5893990A (en) * | 1995-05-31 | 1999-04-13 | Semiconductor Energy Laboratory Co. Ltd. | Laser processing method |
WO2000014784A1 (en) * | 1998-09-04 | 2000-03-16 | Koninklijke Philips Electronics N.V. | Double-pulse laser crystallisation of thin semiconductor films |
WO2001018855A1 (en) * | 1999-09-03 | 2001-03-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures |
WO2001071786A1 (en) * | 2000-03-16 | 2001-09-27 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5523193A (en) * | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
JPH07249591A (en) * | 1994-03-14 | 1995-09-26 | Matsushita Electric Ind Co Ltd | Laser annealing method for semiconductor thin film and thin-film semiconductor element |
-
2000
- 2000-03-21 CN CNB008106878A patent/CN1186802C/en not_active Expired - Fee Related
- 2000-03-21 KR KR1020017014881A patent/KR100672909B1/en not_active IP Right Cessation
- 2000-03-21 JP JP2001569872A patent/JP4220156B2/en not_active Expired - Fee Related
- 2000-03-21 MX MXPA01011852A patent/MXPA01011852A/en active IP Right Grant
- 2000-03-21 EP EP00919501A patent/EP1196947A4/en not_active Withdrawn
- 2000-03-21 CA CA002374498A patent/CA2374498A1/en not_active Abandoned
- 2000-03-21 AU AU2000240180A patent/AU2000240180A1/en not_active Abandoned
- 2000-03-21 WO PCT/US2000/007479 patent/WO2001071791A1/en active IP Right Grant
-
2001
- 2001-09-12 TW TW090122674A patent/TW499717B/en not_active IP Right Cessation
-
2002
- 2002-10-31 HK HK02107913.7A patent/HK1046469A1/en unknown
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4970546A (en) * | 1988-04-07 | 1990-11-13 | Nikon Corporation | Exposure control device |
JPH0433327A (en) * | 1990-05-30 | 1992-02-04 | Kyocera Corp | Forming method of semiconductor ctystallized film |
US5145808A (en) * | 1990-08-22 | 1992-09-08 | Sony Corporation | Method of crystallizing a semiconductor thin film |
EP0655774A2 (en) * | 1993-11-02 | 1995-05-31 | Sony Corporation | Method of forming polycrystalline silicon layer and surface treatment apparatus therefor |
US5496768A (en) * | 1993-12-03 | 1996-03-05 | Casio Computer Co., Ltd. | Method of manufacturing polycrystalline silicon thin film |
EP0681316A2 (en) * | 1994-05-02 | 1995-11-08 | Sony Corporation | Method of processing a thin film on a substrate for display |
US5893990A (en) * | 1995-05-31 | 1999-04-13 | Semiconductor Energy Laboratory Co. Ltd. | Laser processing method |
WO1997045827A1 (en) * | 1996-05-28 | 1997-12-04 | The Trustees Of Columbia University In The City Of New York | Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
WO2000014784A1 (en) * | 1998-09-04 | 2000-03-16 | Koninklijke Philips Electronics N.V. | Double-pulse laser crystallisation of thin semiconductor films |
WO2001018855A1 (en) * | 1999-09-03 | 2001-03-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures |
WO2001071786A1 (en) * | 2000-03-16 | 2001-09-27 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
Non-Patent Citations (4)
Title |
---|
IM J S ET AL: "CONTROLLED SUPER-LATERAL GROWTH OF SI FILM FOR MICROSTRUCTURAL MANIPULATION AND OPTIMIZATION", PHYSICA STATUS SOLIDI (A). APPLIED RESEARCH, BERLIN, DE, vol. 166, 1998, pages 603 - 617, XP002935002, ISSN: 0031-8965 * |
ISHIHARA R ET AL: "A NOVEL DOUBLE-PULSE EXCIMER-LASER CRYSTALLIZATION METHOD OF SILICON THIN-FILMS", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 34, no. 8A, August 1995 (1995-08-01), pages 3976 - 3981, XP000861506, ISSN: 0021-4922 * |
PATENT ABSTRACTS OF JAPAN vol. 016, no. 204 (E - 1202) 15 May 1992 (1992-05-15) * |
See also references of WO0171791A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2003528463A (en) | 2003-09-24 |
MXPA01011852A (en) | 2002-05-06 |
KR100672909B1 (en) | 2007-01-22 |
KR20020002466A (en) | 2002-01-09 |
TW499717B (en) | 2002-08-21 |
AU2000240180A1 (en) | 2001-10-03 |
CA2374498A1 (en) | 2001-09-27 |
CN1186802C (en) | 2005-01-26 |
WO2001071791A1 (en) | 2001-09-27 |
CN1363117A (en) | 2002-08-07 |
JP4220156B2 (en) | 2009-02-04 |
HK1046469A1 (en) | 2003-01-10 |
EP1196947A1 (en) | 2002-04-17 |
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