EP1137022A3 - Dye-sensitized semiconductor particles and photoelectric conversion device - Google Patents

Dye-sensitized semiconductor particles and photoelectric conversion device Download PDF

Info

Publication number
EP1137022A3
EP1137022A3 EP01107183A EP01107183A EP1137022A3 EP 1137022 A3 EP1137022 A3 EP 1137022A3 EP 01107183 A EP01107183 A EP 01107183A EP 01107183 A EP01107183 A EP 01107183A EP 1137022 A3 EP1137022 A3 EP 1137022A3
Authority
EP
European Patent Office
Prior art keywords
dye
semiconductor particles
photoelectric conversion
conversion device
sensitized semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01107183A
Other languages
German (de)
French (fr)
Other versions
EP1137022A2 (en
EP1137022B1 (en
Inventor
Tsutomu Miyasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of EP1137022A2 publication Critical patent/EP1137022A2/en
Publication of EP1137022A3 publication Critical patent/EP1137022A3/en
Application granted granted Critical
Publication of EP1137022B1 publication Critical patent/EP1137022B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • H01G9/2063—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution comprising a mixture of two or more dyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/652—Cyanine dyes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Semiconductor particles having a dye adsorbed thereby in the presence of an anionic organic sulfonic acid derivative.
EP01107183A 2000-03-24 2001-03-22 Dye-sensitized semiconductor particles and photoelectric conversion device Expired - Lifetime EP1137022B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000084511A JP4443713B2 (en) 2000-03-24 2000-03-24 Semiconductor fine particles, photoelectric conversion element and photovoltaic cell
JP2000084511 2000-03-24

Publications (3)

Publication Number Publication Date
EP1137022A2 EP1137022A2 (en) 2001-09-26
EP1137022A3 true EP1137022A3 (en) 2005-06-29
EP1137022B1 EP1137022B1 (en) 2009-05-13

Family

ID=18600980

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01107183A Expired - Lifetime EP1137022B1 (en) 2000-03-24 2001-03-22 Dye-sensitized semiconductor particles and photoelectric conversion device

Country Status (4)

Country Link
EP (1) EP1137022B1 (en)
JP (1) JP4443713B2 (en)
AT (1) ATE431616T1 (en)
DE (1) DE60138667D1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1540680A1 (en) * 2002-09-12 2005-06-15 Agfa-Gevaert N-type metal oxide semiconductor spectrally sensitized with a cationic spectral sensitizer
JP4692025B2 (en) * 2004-03-11 2011-06-01 三菱化学株式会社 Charge transport film composition and ionic compound, charge transport film and organic electroluminescent device using the same, method for producing organic electroluminescent device, and method for producing charge transport film
KR100834327B1 (en) 2004-03-11 2008-06-02 미쓰비시 가가꾸 가부시키가이샤 Composition for charge-transporting film and ion compound, charge-transporting film and organic electroluminescent device using same, and method for manufacturing organic electroluminescent device and method for producing charge-transporting film
JP5503143B2 (en) * 2008-12-25 2014-05-28 日揮触媒化成株式会社 Paint for forming porous metal oxide semiconductor film and photoelectric cell
EP2408058A4 (en) * 2009-03-12 2013-02-20 Nippon Steel Chemical Co Dye-sensitized solar cell, photoelectric conversion element, and dye for use in the solar cell and the element
US8916770B2 (en) 2009-11-05 2014-12-23 Samsung Sdi Co., Ltd. Photoelectric conversion device
CN101916669B (en) * 2010-02-09 2012-07-18 南京大学 Dye adsorption method of working electrodes of dye-sensitized solar cell
EP2982656A1 (en) * 2010-09-03 2016-02-10 Corning Incorporated Process for sealing a glass package and resulting glass package
TWI425056B (en) * 2010-10-29 2014-02-01 Taiwan Textile Res Inst Dyeing composition and their process
KR101286075B1 (en) * 2011-04-04 2013-07-15 포항공과대학교 산학협력단 Dye-sensitized solar cells and manufacturing methods thereof
US20130061929A1 (en) * 2011-09-12 2013-03-14 Konica Minolta Business Technologies, Inc. Photoelectric conversion element, method for producing photoelectric conversion element, and solar cell
JP5881578B2 (en) 2011-12-15 2016-03-09 富士フイルム株式会社 Metal complex dye, photoelectric conversion element, dye-sensitized solar cell, and dye solution
JP2013161751A (en) 2012-02-08 2013-08-19 Fujifilm Corp Photoelectric conversion element, method of manufacturing the same, and dye-sensitized solar cell using the same
JP5925541B2 (en) 2012-03-16 2016-05-25 富士フイルム株式会社 Metal complex dye for photoelectric conversion element, photoelectric conversion element, dye-sensitized solar cell, dye-adsorbing composition liquid for dye-sensitized solar cell, semiconductor electrode for dye-sensitized solar cell, and method for producing dye-sensitized solar cell
JP5913222B2 (en) 2012-09-28 2016-04-27 富士フイルム株式会社 Photoelectric conversion element and dye-sensitized solar cell
JP6063359B2 (en) 2012-09-28 2017-01-18 富士フイルム株式会社 Photoelectric conversion element, dye-sensitized solar cell, metal complex dye and dye solution formed by dissolving metal complex dye
JP5913223B2 (en) 2012-09-28 2016-04-27 富士フイルム株式会社 Metal complex dye, photoelectric conversion element, dye-sensitized solar cell, dye solution and dye-adsorbing electrode
JP2014082187A (en) 2012-09-28 2014-05-08 Fujifilm Corp Photoelectric conversion element and dye-sensitized solar cell
JP5992389B2 (en) 2012-11-16 2016-09-14 富士フイルム株式会社 Photoelectric conversion element, dye-sensitized solar cell, metal complex dye, dye solution, dye-adsorbing electrode, and method for producing dye-sensitized solar battery
JP5944372B2 (en) 2012-12-17 2016-07-05 富士フイルム株式会社 Photoelectric conversion element, dye-sensitized solar cell, metal complex dye, dye solution, dye-adsorbing electrode, and method for producing dye-sensitized solar battery
JP5972811B2 (en) 2013-02-22 2016-08-17 富士フイルム株式会社 Photoelectric conversion element, method for producing photoelectric conversion element, and dye-sensitized solar cell
JP6047513B2 (en) 2013-03-25 2016-12-21 富士フイルム株式会社 Metal complex dye, photoelectric conversion element, dye-sensitized solar cell, and dye solution containing metal complex dye
CN115924961B (en) * 2022-09-28 2023-09-08 广东夜草农业科技有限公司 Oxide photocathode material and photocathode manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0718288A1 (en) * 1994-12-21 1996-06-26 Asulab S.A. Liquid hydrophobic salts, their preparation and their use in electrochemistry
EP0973181A1 (en) * 1998-07-17 2000-01-19 Fuji Photo Film Co., Ltd. Electrolyte, photoelectric conversion device and photoelectrochemical cell
EP0980082A2 (en) * 1998-08-11 2000-02-16 Fuji Photo Film Co., Ltd. Organic electrolyte for a photo-electrochemical cell
EP0986080A2 (en) * 1998-09-10 2000-03-15 Fuji Photo Film Co., Ltd. Crosslinked polymer, electrolyte, and photo-electrochemical cell containing the electrolyte

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587465A (en) * 1981-07-03 1983-01-17 Noboru Sudo Production of paint changing its color with humidity

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0718288A1 (en) * 1994-12-21 1996-06-26 Asulab S.A. Liquid hydrophobic salts, their preparation and their use in electrochemistry
EP0973181A1 (en) * 1998-07-17 2000-01-19 Fuji Photo Film Co., Ltd. Electrolyte, photoelectric conversion device and photoelectrochemical cell
EP0980082A2 (en) * 1998-08-11 2000-02-16 Fuji Photo Film Co., Ltd. Organic electrolyte for a photo-electrochemical cell
EP0986080A2 (en) * 1998-09-10 2000-03-15 Fuji Photo Film Co., Ltd. Crosslinked polymer, electrolyte, and photo-electrochemical cell containing the electrolyte

Also Published As

Publication number Publication date
JP2001266963A (en) 2001-09-28
EP1137022A2 (en) 2001-09-26
JP4443713B2 (en) 2010-03-31
EP1137022B1 (en) 2009-05-13
ATE431616T1 (en) 2009-05-15
DE60138667D1 (en) 2009-06-25

Similar Documents

Publication Publication Date Title
EP1137022A3 (en) Dye-sensitized semiconductor particles and photoelectric conversion device
EP0901175A3 (en) Photoelectric conversion device and solar cell
AU1429401A (en) Organic semiconductor recognition complex and system
EP1039551A3 (en) Photovoltaic module
AU2001281343A1 (en) N-type thiophene semiconductors
EP2360298A3 (en) Method for depositing a semiconductor nanowire
AU2001250477A1 (en) Schottky-diode semiconductor device
AU7457401A (en) Semiconductor chip and semiconductor device using the semiconductor chip
AU2001224025A1 (en) Group iii nitride compound semiconductor light-emitting device and method for producing the same
WO2005037163A3 (en) Transferable patient care equipment support
AU2002309506A1 (en) Semiconductor wafer lifting device and methods for implementing the same
AU1774001A (en) Semiconductor devices with selectively doped iii-v nitride layers
AU2001267880A1 (en) Semiconductor device and method for fabricating the same
AU2001236820A1 (en) Semiconductor structure
EP1153752A3 (en) Semiconductor device, ink tank provided with such device and method of manufacturing such device
CA2261973A1 (en) Aqueous bonding composition
EP1085656A3 (en) Dynamic logic circuitry using quantum mechanical tunneling structures
GB0017320D0 (en) Flourescent conversion filter and organic light-emitting device equipped with the flourescent conversion filter
NL1015471A1 (en) Organic anti-reflective polymer and method for its preparation.
NL1014997A1 (en) Organic anti-reflective coating material and its preparation.
EP1178042A4 (en) -diketonato-metal complexes and process for the preparation thereof, photoelectric conversion devices and photoelectrochemical cells
NO20014029L (en) Organic sol and solid compound based on cerium oxide and an amphiphilic compound and process for its preparation
EP1193765A3 (en) Power semiconductor device
AU2002239754A1 (en) Doped semiconductor nanocrystals
AU2001267890A1 (en) N-type nitride semiconductor laminate and semiconductor device using same

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

17P Request for examination filed

Effective date: 20050728

AKX Designation fees paid

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: FUJIFILM CORPORATION

17Q First examination report despatched

Effective date: 20070823

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 60138667

Country of ref document: DE

Date of ref document: 20090625

Kind code of ref document: P

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090824

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090513

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090913

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090513

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090813

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090513

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090513

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090513

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20100216

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090814

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100331

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20101130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100331

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100322

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100331

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100331

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090513

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090513

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100322

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090513

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20190312

Year of fee payment: 19

Ref country code: GB

Payment date: 20190320

Year of fee payment: 19

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 60138667

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201001

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20200322

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200322