EP1128420A3 - Trenchfilling method of a semiconductor device - Google Patents
Trenchfilling method of a semiconductor device Download PDFInfo
- Publication number
- EP1128420A3 EP1128420A3 EP01103453A EP01103453A EP1128420A3 EP 1128420 A3 EP1128420 A3 EP 1128420A3 EP 01103453 A EP01103453 A EP 01103453A EP 01103453 A EP01103453 A EP 01103453A EP 1128420 A3 EP1128420 A3 EP 1128420A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- trenchfilling
- semiconductor device
- plasma
- barrier layer
- diffusion barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Auf einer Halbleiterstruktur wird in Vertiefungen auf der Oberfläche, insbesondere unterhalb der ersten Metallstrukturebene, eine Diffusionsbarriereschicht, vorzugsweise mit Hilfe einer plasmaunterstützten Gasphasenabscheidung, bei der die im Plasma enthaltenen Ionen senkrecht zur Oberfläche beschleunigt werden, abgeschieden, so dass sich eine nicht konforme Abscheidung der Diffusionsbarriereschicht ergibt. On a semiconductor structure, in depressions on the surface, in particular below the first metal structure plane, a diffusion barrier layer, preferably by means of a plasma-assisted vapor deposition, in which the ions contained in the plasma are accelerated perpendicular to the surface, deposited, so that a non-conformal deposition of the diffusion barrier layer results.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10010286A DE10010286A1 (en) | 2000-02-25 | 2000-02-25 | Method for filling depressions in a surface of a semiconductor structure and a semiconductor structure filled in this way |
DE10010286 | 2000-02-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1128420A2 EP1128420A2 (en) | 2001-08-29 |
EP1128420A3 true EP1128420A3 (en) | 2006-06-07 |
Family
ID=7633317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01103453A Withdrawn EP1128420A3 (en) | 2000-02-25 | 2001-02-14 | Trenchfilling method of a semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US6759323B2 (en) |
EP (1) | EP1128420A3 (en) |
DE (1) | DE10010286A1 (en) |
TW (1) | TW518672B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10153200B4 (en) * | 2001-10-27 | 2005-08-04 | Infineon Technologies Ag | Process for BPSG glass filling of openings in gate electrode layers |
EP1570525B1 (en) * | 2002-12-09 | 2015-12-02 | Imec | Method for forming a dielectric stack |
US20150118832A1 (en) * | 2013-10-24 | 2015-04-30 | Applied Materials, Inc. | Methods for patterning a hardmask layer for an ion implantation process |
JP6587384B2 (en) * | 2014-11-14 | 2019-10-09 | 東レエンジニアリング株式会社 | Method for forming sealing film and sealing film |
JP6690496B2 (en) * | 2016-03-17 | 2020-04-28 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998028465A1 (en) * | 1996-12-23 | 1998-07-02 | Lam Research Corporation | Inductively coupled plasma cvd |
JPH11154673A (en) * | 1997-11-20 | 1999-06-08 | Nec Corp | Manufacture of semiconductor device |
EP0928015A2 (en) * | 1997-12-31 | 1999-07-07 | Texas Instruments Incorporated | Method of preventing boron penetration |
US5943599A (en) * | 1997-08-27 | 1999-08-24 | Vanguard International Semiconductor Corporation | Method of fabricating a passivation layer for integrated circuits |
US5994209A (en) * | 1996-11-13 | 1999-11-30 | Applied Materials, Inc. | Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5013691A (en) * | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
KR970007116B1 (en) * | 1993-08-31 | 1997-05-02 | 삼성전자 주식회사 | Insulating film forming method of semiconductor device and apparatus therefor |
JP2899600B2 (en) * | 1994-01-25 | 1999-06-02 | キヤノン販売 株式会社 | Film formation method |
DE19505268C2 (en) * | 1995-02-16 | 1999-02-18 | Fraunhofer Ges Forschung | CVD process for coating substrate surfaces |
US5821621A (en) * | 1995-10-12 | 1998-10-13 | Texas Instruments Incorporated | Low capacitance interconnect structure for integrated circuits |
US5792681A (en) * | 1997-01-15 | 1998-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication process for MOSFET devices and a reproducible capacitor structure |
US5872058A (en) * | 1997-06-17 | 1999-02-16 | Novellus Systems, Inc. | High aspect ratio gapfill process by using HDP |
US6221792B1 (en) * | 1997-06-24 | 2001-04-24 | Lam Research Corporation | Metal and metal silicide nitridization in a high density, low pressure plasma reactor |
US5858848A (en) | 1997-10-24 | 1999-01-12 | Advanced Micro Devices, Inc. | Semiconductor fabrication employing self-aligned sidewall spacers laterally adjacent to a transistor gate |
US6100202A (en) * | 1997-12-08 | 2000-08-08 | Taiwan Semiconductor Manufacturing Company | Pre deposition stabilization method for forming a void free isotropically etched anisotropically patterned doped silicate glass layer |
US6180530B1 (en) * | 1998-04-01 | 2001-01-30 | Taiwan Semiconductor Manufacturing Company | Self-aligned contact structure |
US6203863B1 (en) * | 1998-11-27 | 2001-03-20 | United Microelectronics Corp. | Method of gap filling |
US6028013A (en) * | 1999-05-06 | 2000-02-22 | Vlsi Technology, Inc. | Moisture repellant integrated circuit dielectric material combination |
-
2000
- 2000-02-25 DE DE10010286A patent/DE10010286A1/en not_active Ceased
-
2001
- 2001-02-14 EP EP01103453A patent/EP1128420A3/en not_active Withdrawn
- 2001-02-26 US US09/793,345 patent/US6759323B2/en not_active Expired - Lifetime
- 2001-03-01 TW TW090104050A patent/TW518672B/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5994209A (en) * | 1996-11-13 | 1999-11-30 | Applied Materials, Inc. | Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films |
WO1998028465A1 (en) * | 1996-12-23 | 1998-07-02 | Lam Research Corporation | Inductively coupled plasma cvd |
US5943599A (en) * | 1997-08-27 | 1999-08-24 | Vanguard International Semiconductor Corporation | Method of fabricating a passivation layer for integrated circuits |
JPH11154673A (en) * | 1997-11-20 | 1999-06-08 | Nec Corp | Manufacture of semiconductor device |
EP0928015A2 (en) * | 1997-12-31 | 1999-07-07 | Texas Instruments Incorporated | Method of preventing boron penetration |
Non-Patent Citations (3)
Title |
---|
JENGYI YU ET AL: "Comparative study of PE-BPSG and HDP-PSG as PMD for 0.25 /spl mu/m memory device", INTERCONNECT TECHNOLOGY, 1999. IEEE INTERNATIONAL CONFERENCE SAN FRANCISCO, CA, USA 24-26 MAY 1999, PISCATAWAY, NJ, USA,IEEE, US, 24 May 1999 (1999-05-24), pages 35 - 37, XP010347426, ISBN: 0-7803-5174-6 * |
NGUYEN S V: "HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION OF SILICON-BASED DIELECTRIC FILMS FOR INTEGRATED CIRCUITS", IBM JOURNAL OF RESEARCH AND DEVELOPMENT, INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW YORK, NY, US, vol. 43, no. 1/2, January 1999 (1999-01-01), pages 109 - 126, XP001199695, ISSN: 0018-8646 * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30) * |
Also Published As
Publication number | Publication date |
---|---|
US6759323B2 (en) | 2004-07-06 |
DE10010286A1 (en) | 2001-09-13 |
EP1128420A2 (en) | 2001-08-29 |
TW518672B (en) | 2003-01-21 |
US20010054749A1 (en) | 2001-12-27 |
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