EP1101842A3 - Substrat pour l'épitaxie de composés III-V et sa méthode de fabrication - Google Patents

Substrat pour l'épitaxie de composés III-V et sa méthode de fabrication Download PDF

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Publication number
EP1101842A3
EP1101842A3 EP00124939A EP00124939A EP1101842A3 EP 1101842 A3 EP1101842 A3 EP 1101842A3 EP 00124939 A EP00124939 A EP 00124939A EP 00124939 A EP00124939 A EP 00124939A EP 1101842 A3 EP1101842 A3 EP 1101842A3
Authority
EP
European Patent Office
Prior art keywords
epitaxy
iii
compounds
producing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00124939A
Other languages
German (de)
English (en)
Other versions
EP1101842A2 (fr
Inventor
Keiichiro c/o NGK Insulators Ltd. Asai
Tomohiko c/o NGK Insulators Ltd. Shibata
Yukinori c/o NGK Insulators Ltd. Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of EP1101842A2 publication Critical patent/EP1101842A2/fr
Publication of EP1101842A3 publication Critical patent/EP1101842A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP00124939A 1999-11-17 2000-11-15 Substrat pour l'épitaxie de composés III-V et sa méthode de fabrication Withdrawn EP1101842A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32656199A JP2001144014A (ja) 1999-11-17 1999-11-17 エピタキシャル成長用基板およびその製造方法
JP32656199 1999-11-17

Publications (2)

Publication Number Publication Date
EP1101842A2 EP1101842A2 (fr) 2001-05-23
EP1101842A3 true EP1101842A3 (fr) 2005-08-17

Family

ID=18189210

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00124939A Withdrawn EP1101842A3 (fr) 1999-11-17 2000-11-15 Substrat pour l'épitaxie de composés III-V et sa méthode de fabrication

Country Status (3)

Country Link
US (1) US6554896B1 (fr)
EP (1) EP1101842A3 (fr)
JP (1) JP2001144014A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6488767B1 (en) 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP4784012B2 (ja) * 2001-07-27 2011-09-28 日亜化学工業株式会社 窒化物半導体基板、及びその製造方法
JP4514727B2 (ja) * 2001-12-25 2010-07-28 日本碍子株式会社 Ｉｉｉ族窒化物膜の製造方法、ｉｉｉ族窒化物膜、ｉｉｉ族窒化物素子用エピタキシャル基板、及びｉｉｉ族窒化物素子
JP2003327497A (ja) * 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法
TW561637B (en) * 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
JP4052150B2 (ja) * 2003-03-05 2008-02-27 住友電気工業株式会社 窒化物系半導体装置の製造方法
JP2006206343A (ja) * 2005-01-25 2006-08-10 Ngk Insulators Ltd ＡｌＮ単結晶の表面平坦化方法およびＡｌＮ単結晶基板の作製方法
KR100766858B1 (ko) * 2006-03-16 2007-10-12 서울옵토디바이스주식회사 질화물 반도체 발광소자용 버퍼층 형성 방법 및 그 질화물반도체 발광소자
JP4789973B2 (ja) * 2008-05-22 2011-10-12 シャープ株式会社 Ｍｏｓ電界効果トランジスタおよびその製造方法
JP2011222969A (ja) * 2010-03-26 2011-11-04 Ngk Insulators Ltd 半導体素子用エピタキシャル基板の製造方法、半導体素子用エピタキシャル基板、および半導体素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144962A (ja) * 1996-09-10 1998-05-29 Toshiba Corp 半導体発光素子およびその製造方法
WO1998045511A1 (fr) * 1997-04-04 1998-10-15 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk POLISSAGE MECANOCHIMIQUE DE CRISTAUX ET DE COUCHES EPITAXIALES DE GaN ET DE Ga1-x-yAlxInyN
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
EP0993048A2 (fr) * 1998-09-14 2000-04-12 Matsushita Electronics Corporation Dispositif à semi-conducteur de nitrure et son procédé de fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754806B2 (ja) * 1987-01-20 1995-06-07 日本電信電話株式会社 化合物半導体単結晶膜の成長方法
JP3395631B2 (ja) * 1997-04-17 2003-04-14 日亜化学工業株式会社 窒化物半導体素子及び窒化物半導体素子の製造方法
JPH11261106A (ja) * 1998-03-12 1999-09-24 Nippon Telegr & Teleph Corp <Ntt> 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144962A (ja) * 1996-09-10 1998-05-29 Toshiba Corp 半導体発光素子およびその製造方法
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
WO1998045511A1 (fr) * 1997-04-04 1998-10-15 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk POLISSAGE MECANOCHIMIQUE DE CRISTAUX ET DE COUCHES EPITAXIALES DE GaN ET DE Ga1-x-yAlxInyN
EP0993048A2 (fr) * 1998-09-14 2000-04-12 Matsushita Electronics Corporation Dispositif à semi-conducteur de nitrure et son procédé de fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MATSUOKA T ET AL: "GROWTH AND PROPERTIES OF A WIDE-GAP SEMICONDUCTOR INGAN", OPTOELECTRONICS DEVICES AND TECHNOLOGIES, MITA PRESS, TOKYO, JP, vol. 5, no. 1, June 1990 (1990-06-01), pages 53 - 64, XP000160110, ISSN: 0912-5434 *

Also Published As

Publication number Publication date
EP1101842A2 (fr) 2001-05-23
US6554896B1 (en) 2003-04-29
JP2001144014A (ja) 2001-05-25

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