EP1100092B1 - X-ray guiding device - Google Patents

X-ray guiding device Download PDF

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Publication number
EP1100092B1
EP1100092B1 EP00123501A EP00123501A EP1100092B1 EP 1100092 B1 EP1100092 B1 EP 1100092B1 EP 00123501 A EP00123501 A EP 00123501A EP 00123501 A EP00123501 A EP 00123501A EP 1100092 B1 EP1100092 B1 EP 1100092B1
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EP
European Patent Office
Prior art keywords
reflecting
measurement object
coating
slit
reflecting areas
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EP00123501A
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German (de)
French (fr)
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EP1100092A3 (en
EP1100092A2 (en
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Helmut Fischer GmbH and Co
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Helmut Fischer GmbH and Co
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

Definitions

  • the invention relates to a device for guiding X-rays from a radiation source to a measurement object.
  • the X-ray fluorescence method is used to measure thin layers or multiple layers.
  • the X-ray fluorescence radiation of the individual elements of a sample is detected and converted into layer thickness (s) and composition (s).
  • the stimulating X-radiation passes through a collimator system dimmed as a fine beam to the measuring surface. From here the X-ray fluorescence radiation is emitted. In a proportional counter or other detector, the radiation detected in an energy-dispersive manner.
  • EP 0 724 150 A1 discloses X-ray radiation conductors which enable the X-ray radiation to be focused on these small functional surfaces. These are so-called monocapillaries. These monocapillaries are cylindrical in the form of a glass tube. Total reflection on the walls of the glass tube makes it possible to guide the X-rays with sufficient intensity to the measurement object.
  • the designed as monocapillaries collimators have been further developed to the effect that the inner walls of the glass tube are parabolic, so that a focusing of the reflected rays is to be measured object.
  • polycapillaries are known. This is a monolith comprising a bundle of several monocapillaries, again arranged such that the targeted X-rays focus at a point outside the exit plane of the monolith.
  • the invention is therefore an object of the invention to provide a device for guiding the X-rays from a radiation source to a target, especially for small feature sizes with a functional area less than 100 microns x 100 microns, which are inexpensive to produce, adjustable to the measuring surface to be measured and a sufficient transmission of the radiation intensity to the measurement object allows.
  • the inventive design of at least two reflecting surfaces forming a tapered gap has the advantage that a simple arrangement has been created which allows the X-rays to be guided to the object of measurement with sufficient intensity and additionally focused to allow the detector to have a sufficient Can detect intensity of the emitted fluorescence radiation.
  • the at least two gap forming reflecting surfaces are easy to manufacture. Elaborate production engineering methods for producing the device for guiding X-rays are not given in comparison to the known from the prior art mono and / or polycapillaries.
  • the X-rays are guided by total reflection within a gap formed by at least two reflection surfaces to the measurement object.
  • the X-ray radiation emerging laterally from the column or columns is ineffective for the excitation of the fluorescence radiation, but by total reflection of the X-rays between the at least two reflection surfaces forming a gap, an at least sufficient intensity is introduced or transferred to the measurement object.
  • the gap formed by the at least two reflecting surfaces is adjustable in width. This makes it possible that the size of the measuring surface is adjustable on the measuring object.
  • the gap width is adapted at least to the size of the measurement surface of the measurement objects and advantageously to the exit opening of the x-ray tube, so that the greatest possible radiation intensity can be transferred to the measurement object.
  • At least one of the reflection surfaces fixed and at least one further reflection surface in the distance and / or angle is adjustable.
  • either distance / and / or angle can be set as a function of the application, wherein a reflection surface serves as a reference surface.
  • the reflection surfaces are made of a semiconductor material, in particular a silicon wafer.
  • a semiconductor material in particular a silicon wafer.
  • the industrial production of silicon wafers has meanwhile become cost-effective.
  • the silicon wafers due to the very flat configuration, have a surface which is suitable for the total reflection of the X-rays.
  • the critical angle of total reflection is, for example, a few mrad depending on the energy of the X-ray. Due to the high-quality planar surface of the silicon wafer, a sufficiently loss-free beam transmission can be provided.
  • the reflection surfaces are at least partially vaporized with a noble metal, preferably copper, silver, gold, platinum, palladium or the like.
  • a noble metal preferably copper, silver, gold, platinum, palladium or the like.
  • the coating is provided at least partially at an end facing the jet exit of the X-ray tube.
  • the reflection surfaces close to the measurement object have a region which has a total reflection-inhibiting coating or at least partially coated reflection surfaces has a region which is provided without coating or in which the total reflection-inhibiting coating ,
  • At least one reflection surface can be adjusted by at least one adjustment unit.
  • This setting unit can be advantageously designed as a precision mechanical adjustment, as an electrical, hydraulic, pneumatic or piezoelectric actuator.
  • This adjustment unit must enable adjustments at least in the micrometer range, so that an exact alignment and adjustment of the at least two mutually arranged reflection surfaces is provided.
  • the gap width of the collimator is adjustable. This additionally provides a possibility for setting and limiting the exit surfaces in order to adapt the focusing to the measurement task.
  • FIG. 1 schematically shows the essential components of a layer thickness measuring device 11, wherein the illustration of an evaluation unit, a screen for visualizing a video camera recorded by a video camera
  • This layer thickness measuring device 11 is used, for example, for measuring bonding pads, contacts, which are provided in part with selective coating, conductor tracks and functional coatings on small areas.
  • 12 layer thicknesses are preferably determined or tested by a Schichtdickenmeß réelle 11 with the device according to the invention, the measuring surface and the functional surfaces are smaller than 100 microns x 100 microns, especially smaller than 50 microns x 50 microns.
  • an X-ray tube 13 an X-ray radiation is generated, which is directed via an anode 14 to a DUT 16.
  • the X-radiation excites fluorescence radiation in a layer of the test object 16.
  • the intensity of this fluorescence radiation as a function of the energy (spectrum) is a function of the layer thickness. This or the parameter of the layer system is exploited by registering the system of emitted radiation with the aid of a detector 17.
  • the device 12 which consists of two opposing reflection surfaces 18 according to the embodiment. These reflection surfaces 18 are used for beam focusing and beam transmission, so that the X-radiation reaches the measuring surface of the test object 16.
  • the reflection surfaces 18 are preferably arranged directly to the anode 14 or to an outlet flange 21 near the anode 14.
  • a collimator 23 is furthermore provided, as a result of which a measuring region 24 according to FIG. 3 can be imaged on a measurement object.
  • the collimator 23 is advantageously a slit collimator whose slit width is adjustable.
  • the reflection surfaces 18 are formed as elongated, rectangular surfaces, as can be seen from Figure 1 and Figure 2.
  • the length of the reflection surfaces 18 is determined essentially by the structure and by the degree of total reflection. X-rays that are not parallel between an axis of the measuring area 24 and the anode 14 are deflected at least once by total reflection.
  • the width of the reflection surfaces 18 are at least one and a half times as large as the maximum functional surface to be tested.
  • Advantageously used for the reflection surfaces 18 silicon wafer. This inexpensive base material can be easily adapted to the appropriate size of the device 12 according to the invention.
  • the reflecting surfaces 18 produced from a silicon wafer are advantageously applied to holding elements 26, 27 according to FIG.
  • these are glued without tension, so that the flatness of the reflection surface 18 can be maintained.
  • the reflection surfaces 18 can also be fixed stress-free on the holding elements 26, 27 by a clamp or the like.
  • an adjustment unit 28 engages on one of the two retaining elements 27, by means of which a retaining element 27 can be adjusted to the stationary element 26.
  • the holding element 26 advantageously accommodates the reflection surface 18 parallel to the central axis 29 of the device 12. By setting unit 28, the gap width can be adjusted. It is also possible that the angularity of the holding member 27 is adjustable to the element 26. Alternatively, a mirror-image arrangement may also be provided.
  • an adjusting unit 28 is provided on each of the holding elements 26, 27, whereby the holding elements 26, 27 can be arranged either parallel to one another and / or at an angle to each other, so that a uniform or tapered gap to the test object 16 is formed.
  • the setting unit 28 is formed such that gap widths can be set optionally in a range of 10 to 100 ⁇ m, for example.
  • fine mechanical adjustment mechanisms, piezoelectric actuators, as well as electrically, hydraulically, pneumatically operated actuators can be provided.
  • a flattening 31 is provided on the holding element 26. This flattening makes it possible for the emitted fluorescence radiation to have a sufficient opening width 32 in order to detect the emitted fluorescence radiation.
  • the reflection surface 18 may, for example, be vapor-deposited with a noble metal.
  • the critical angle for total reflection which is 1.5 mrad for silicon, can be increased to 4.5 mrad by a platinum coating.
  • This in turn is advantageously reflected in the transmission of the X-radiation low.
  • coated reflective surfaces of the base material may consist of a quartz surface or a plastic material that meets the requirement for flatness and has a coating.
  • the coating may be provided at least at the entrance of the reflection surfaces 18, so that the number of captured and reflected rays is as large as possible. Over the course along the reflection surfaces 18, the coating can be completely continued or even provided only partially.
  • the coating or the material of the coating may also change depending on the applications. For example, by reducing the critical angle for the total reflection, the divergence at the exit of the reflection surfaces 18 can be reduced, whereby a focusing of the radiation and thereby an increase in intensity on the measuring region 24 of the test object 16 can be achieved.
  • a coating is not provided or a total reflection preventing coating is provided, whereby the emerging below the reflection surface 18 radiation just on the size of the measuring range 24 of the measurement object 16th is focused. The irradiation of edge regions outside the measuring range 24 can thereby be considerably reduced.
  • the measuring range can be adjusted depending on the measurement task.
  • the collimator 23 can also be adapted to this measuring range, so that an intensity increase to a predetermined measuring range is made possible by the focusing of the radiation.
  • the reflection surfaces 18 are at least slightly concave.
  • the concave formation can taper towards the lower end 22, so that a kind of voice tube-shaped configuration of the reflection surfaces 18 is given.
  • the dimensions must be taken into account, which can also be in the micrometer range.
  • the opening width of the reflection surfaces 18 at the input of the device 12 substantially corresponds to the outlet opening of the X-ray radiation emitted via the anode. Similarly, a slightly larger or smaller opening width be given to the diameter of the primary spot of the X-radiation.
  • the device 12 may further include openings and receptacles which serve to arrange an optic to visualize the measurement subject 16 by a video camera.
  • the device 12 is provided according to the embodiment by two mutually arranged reflection surfaces 18, which are arranged parallel or at an acute angle to each other. It can also be provided that instead of these two reflection surfaces 18, three or more reflection surfaces are arranged in a suitable manner to each other to allow the transmission of X-rays to the measuring range 24 of a DUT 16, so that by focusing the X-ray radiation, an increase in intensity is possible , However, it is not necessary, as known in the art, for a closed tubular arrangement to be used to focus the X-rays toward the measurement area by total reflection. Further geometric configurations of the reflection surfaces 18 are also conceivable, which enable the total reflection of the X-ray radiation.

Abstract

Apparatus for guiding X-rays from a radiation source to a measurement object (16) having at least two reflecting areas (18) forming a slit.

Description

Die Erfindung betrifft eine Vorrichtung zur Führung von Röntgenstrahlen von einer Strahlenquelle zu einem Messobjekt.The invention relates to a device for guiding X-rays from a radiation source to a measurement object.

Zur Messung dünner Schichten oder Mehrfachschichten wird die Röntgenfluoreszenzmethode eingesetzt. Bei einer derartigen Schichtanalyse wird die Röntgenfluoreszenzstrahlung der einzelnen Elemente einer Probe nachgewiesen und in Schichtdicke(n) und Zusammensetzung(en) umgerechnet. Die anregende Röntgenstrahlung gelangt durch ein Kollimatorsystem abgeblendet als feines Strahlenbündel an die Messfläche. Von hier aus wird die Röntgenfluoreszenzstrahlung emittiert. In einem Proportionalzählrohr oder einem anderen Detektor wird die Strahlung energiedispersiv nachgewiesen. Durch eine derartige Schichtdickenanalyse lassen sich berührungslos und zerstörungsfrei Funktionsflächen mit Abmessungen bis einer Größe von beispielsweise 100 µm x 100 µm exakt ermitteln.The X-ray fluorescence method is used to measure thin layers or multiple layers. In such a layer analysis, the X-ray fluorescence radiation of the individual elements of a sample is detected and converted into layer thickness (s) and composition (s). The stimulating X-radiation passes through a collimator system dimmed as a fine beam to the measuring surface. From here the X-ray fluorescence radiation is emitted. In a proportional counter or other detector, the radiation detected in an energy-dispersive manner. By such a layer thickness analysis can be contactless and non-destructive functional surfaces with dimensions up to a size of, for example, 100 microns x 100 microns accurately determined.

Zur Schichtdickenanalyse von kleineren Funktionsflächen von beispielsweise weniger als 100 µm x 100 µm sind aus der EP 0 724 150 A1 Röntgenstrahlungsleiter bekannt, welche ermöglichen, dass die Röntgenstrahlung auf diese kleinen Funktionsflächen fokussiert wird. Das sind sogenannte Monokapillare. Diese Monokapillaren sind zylindrisch in Form eines Glasröhrchens ausgebildet. Durch Totalreflexion an den Wänden des Glasrohres wird ermöglicht, dass die Röntgenstrahlen mit hinreichender Intensität zum Messobjekt geführt werden.For layer thickness analysis of smaller functional surfaces of, for example, less than 100 .mu.m.times.100 .mu.m, EP 0 724 150 A1 discloses X-ray radiation conductors which enable the X-ray radiation to be focused on these small functional surfaces. These are so-called monocapillaries. These monocapillaries are cylindrical in the form of a glass tube. Total reflection on the walls of the glass tube makes it possible to guide the X-rays with sufficient intensity to the measurement object.

Die als Monokapillaren ausgebildeten Kollimatoren sind darüber hinaus dahingehend weiterentwickelt worden, dass die Innenwände der Glasröhre parabolisch ausgebildet sind, so dass eine Fokussierung der reflektierten Strahlen zum Messobjekt erfolgen soll. Des weiteren sind sogenannte Polykapillare bekannt. Hierbei handelt es sich um einen Monolithen, der ein Bündel von mehreren Monokapillaren aufweist, wobei diese wiederum derart angeordnet sind, dass die gezielt geführten Röntgenstrahlen sich in einem Punkt außerhalb der Austrittsebene des Monolithen fokussieren.The designed as monocapillaries collimators have been further developed to the effect that the inner walls of the glass tube are parabolic, so that a focusing of the reflected rays is to be measured object. Furthermore, so-called polycapillaries are known. This is a monolith comprising a bundle of several monocapillaries, again arranged such that the targeted X-rays focus at a point outside the exit plane of the monolith.

Diese Kapillare weisen den Nachteil auf, dass diese im Preis hoch sind und Schichtdickenmessgeräte mit diesen Kollimatoren wirtschaftlich nicht herstellbar sind. Des weiteren weisen die oben beschriebenen Kollimatoren den Nachteil auf, dass diese in ihrem Durchmesser fest ausgebildet sind, so dass eine Einstellung und Fokussierung der Röntgenstrahlen auf eine unterschiedliche Größe des Messobjektes nicht ermöglicht ist. Darüber hinaus weisen diese Kollimatoren den Nachteil auf, dass die Beschaffung äußerst erschwert ist, da die Herstellung dieser Kollimatoren insbesondere auf Grund deren Komplexität monopolisiert ist.These capillaries have the disadvantage that they are high in price and coating thickness gauges with these collimators are not economically feasible. Furthermore, the collimators described above have the disadvantage that they are fixed in their diameter, so that adjustment and focusing of the X-rays to a different size of the measurement object is not possible. In addition, these collimators have the disadvantage that the procurement is extremely difficult because the production of these collimators is monopolized in particular because of their complexity.

Der Erfindung liegt deshalb die Aufgabe zugrunde, eine Vorrichtung zur Führung der Röntgenstrahlen von einer Strahlenquelle zu einem Messobjekt, insbesondere für kleine Strukturgrößen mit einer Funktionsfläche unter 100 µm x 100 µm zu schaffen, welche kostengünstig herstellbar sind, auf die zu messende Messfläche einstellbar und eine hinreichende Übermittlung der Strahlungsintensität zum Messobjekt ermöglicht.The invention is therefore an object of the invention to provide a device for guiding the X-rays from a radiation source to a target, especially for small feature sizes with a functional area less than 100 microns x 100 microns, which are inexpensive to produce, adjustable to the measuring surface to be measured and a sufficient transmission of the radiation intensity to the measurement object allows.

Diese Aufgabe wird erfindungsgemäß durch eine Vorrichtung gemäß dem Anspruch 1 gelöst.This object is achieved by a device according to claim 1.

Die erfindungsgemäße Ausgestaltung von zumindest zwei einen sich verjüngenden Spalt bildenden Reflexionsflächen weist den Vorteil auf, dass eine einfache Anordnung geschaffen wurde, welche ermöglicht, dass die Röntgenstrahlen mit hinreichender Intensität zum Messobjekt geführt und zusätzlich fokussiert werden, um zu ermöglichen, dass der Detektor eine hinreichende Intensität der emittierten Fluoreszenzstrahlung erfassen kann. Die zumindest zwei einen Spalt bildenden Reflexionsflächen sind in der Herstellung einfach. Aufwendige fertigungstechnische Verfahren zur Herstellung der Vorrichtung zur Führung von Röntgenstrahlen sind im Vergleich zu den aus dem Stand der Technik bekannten Mono-und/oder Polykapillaren nicht gegeben.The inventive design of at least two reflecting surfaces forming a tapered gap has the advantage that a simple arrangement has been created which allows the X-rays to be guided to the object of measurement with sufficient intensity and additionally focused to allow the detector to have a sufficient Can detect intensity of the emitted fluorescence radiation. The at least two gap forming reflecting surfaces are easy to manufacture. Elaborate production engineering methods for producing the device for guiding X-rays are not given in comparison to the known from the prior art mono and / or polycapillaries.

Im Gegensatz zum Stand der Technik, bei welchem die Mono- oder Polykapillare aus vollständig geschlossenen Glasröhrchen gebildet sind, genügt es gemäß dem Gegenstand der Erfindung, dass die Röntgenstrahlen durch Totalreflexion innerhalb eines durch zumindest zwei Reflexionsflächen gebildeten Spaltes zum Messobjekt geführt werden. Die seitlich aus dem oder den Spalten austretende Röntgenstrahlung ist für die Anregung der Fluoreszenzstrahlung unwirksam, aber durch Totalreflexion der Röntgenstrahlen zwischen den zumindest zwei einen Spalt bildenden Reflexionsflächen wird eine zumindest hinreichende Intensität auf das Messobjekt eingeleitet oder übergeführt.In contrast to the prior art, in which the mono- or polycapillaries are formed from completely closed glass tubes, it is sufficient according to the subject matter of the invention that the X-rays are guided by total reflection within a gap formed by at least two reflection surfaces to the measurement object. The X-ray radiation emerging laterally from the column or columns is ineffective for the excitation of the fluorescence radiation, but by total reflection of the X-rays between the at least two reflection surfaces forming a gap, an at least sufficient intensity is introduced or transferred to the measurement object.

Nach einer vorteilhaften Ausgestaltung der Erfindung ist vorgesehen, dass der durch die zumindest zwei Reflexionsflächen gebildete Spalt in der Breite einstellbar ist. Dadurch ist ermöglicht, dass die Größe der Messfläche auf dem Messobjekt einstellbar ist. Somit kann die Vorrichtung auf unterschiedliche Anforderungen der Schichtdickenanalyse eingestellt und angepasst werden. Die Spaltbreite ist zumindest an die Größe der Messfläche der Messobjekte und vorteilhafterweise auf die Austrittsöffnung der Röntgenröhre angepasst, so dass eine möglichst große Strahlungsintensität zum Messobjekt übergeführt werden kann.According to an advantageous embodiment of the invention, it is provided that the gap formed by the at least two reflecting surfaces is adjustable in width. This makes it possible that the size of the measuring surface is adjustable on the measuring object. Thus, the device can be adjusted and adapted to different requirements of the layer thickness analysis. The gap width is adapted at least to the size of the measurement surface of the measurement objects and advantageously to the exit opening of the x-ray tube, so that the greatest possible radiation intensity can be transferred to the measurement object.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung ist vorgesehen, dass zumindest eine der Reflexionsflächen fixiert und zumindest eine weitere Reflexionsfläche im Abstand und/oder Winkel einstellbar ist. Dadurch kann in Abhängigkeit des Anwendungsfalles wahlweise sowohl Abstand/und oder Winkel eingestellt werden, wobei eine Reflexionsfläche als Referenzfläche dient.According to a further advantageous embodiment of the invention it is provided that at least one of the reflection surfaces fixed and at least one further reflection surface in the distance and / or angle is adjustable. As a result, either distance / and / or angle can be set as a function of the application, wherein a reflection surface serves as a reference surface.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung ist vorgesehen, dass die Reflexionsflächen aus einem Halbleitermaterial, insbesondere einem Siliziumwafer hergestellt sind. Die industrielle Herstellung der Siliziumwafer ist zwischenzeitlich kostengünstig. Die Siliziumwafer weisen des weiteren aufgrund der sehr ebenen Ausgestaltung eine Oberfläche auf, die sich für die Totalreflexion der Röntgenstrahlen eignet. Der kritische Winkel der Totalreflexion liegt beispielsweise bei wenigen mrad abhängig von der Energie der Röntgenstrahlung. Durch die hochwertige ebene Oberfläche der Siliziumwafer kann eine hinreichend verlustfreie Strahlweiterleitung gegeben sein.According to a further advantageous embodiment of the invention, it is provided that the reflection surfaces are made of a semiconductor material, in particular a silicon wafer. The industrial production of silicon wafers has meanwhile become cost-effective. Furthermore, the silicon wafers, due to the very flat configuration, have a surface which is suitable for the total reflection of the X-rays. The critical angle of total reflection is, for example, a few mrad depending on the energy of the X-ray. Due to the high-quality planar surface of the silicon wafer, a sufficiently loss-free beam transmission can be provided.

Vorteilhafterweise ist vorgesehen, dass die Reflexionsflächen zumindest teilweise mit einem Edelmetall, vorzugsweise Kupfer, Silber, Gold, Platin, Paladium oder dergleichen bedampft ist. Durch diese vorzugsweise auf einem Siliziumwafer vorgesehene Beschichtung kann der kritische Winkel beispielsweise bei einer Platinbeschichtung auf 4,5 mrad erhöht sein, wodurch der kritische Winkel für die Totalreflexion erhöht sein kann. Dies führt wiederum zu dem Effekt, dass eine höhere Intensität der Röntgenstrahlung am Messobjekt vorliegt, wodurch eine hinreichend hohe Intensität zur Emittierung von Fluoreszenzstrahlen gegeben sein kann.Advantageously, it is provided that the reflection surfaces are at least partially vaporized with a noble metal, preferably copper, silver, gold, platinum, palladium or the like. By means of this coating, which is preferably provided on a silicon wafer, the critical angle can be increased to 4.5 mrad, for example in the case of a platinum coating, as a result of which the critical angle for the total reflection can be increased. This in turn leads to the effect that a higher intensity of the X-radiation is present on the measurement object, whereby a sufficiently high intensity can be given for the emission of fluorescence beams.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung ist vorgesehen, dass die Beschichtung zumindest teilweise an einem dem Strahlaustritt der Röntgenröhre zugewandten Ende vorgesehen ist. Dadurch können eine Vielzahl von Röntgenstrahlen durch Totalreflexion im Eingangsbereich reflektiert werden, wodurch eine hohe Intensität erzielt werden kann.According to a further advantageous embodiment of the invention, it is provided that the coating is provided at least partially at an end facing the jet exit of the X-ray tube. As a result, a plurality of X-rays can be reflected by total reflection in the entrance area, whereby a high intensity can be achieved.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung ist vorgesehen, dass die Reflexionsflächen nahe dem Messobjekt einen Bereich aufweisen, der eine die Totalreflexion unterbindende Beschichtung aufweist oder bei zumindest teilweise beschichteten Reflexionsflächen einen Bereich aufweist, der ohne Beschichtung oder bei dem eine die Totalreflexion unterbindende Beschichtung vorgesehen ist. Dadurch kann ermöglicht werden, dass die Totalreflexion von Strahlen eliminiert wird, welche nach einer letzten Reflexion vor Austritt aus den Reflexionsflächen außerhalb des Messbereiches liegen würde. Durch diese Anordnung kann eine noch exaktere Bestrahlung der Messfläche an einem Messobjekt erzielt werden, wodurch wiederum die Qualität der Messung erhöht wird.According to a further advantageous embodiment of the invention, it is provided that the reflection surfaces close to the measurement object have a region which has a total reflection-inhibiting coating or at least partially coated reflection surfaces has a region which is provided without coating or in which the total reflection-inhibiting coating , This makes it possible to eliminate the total reflection of rays which, after a last reflection before exiting the reflection surfaces, would be outside the measuring range. By this arrangement, even more accurate irradiation of the measuring surface can be achieved on a measuring object, which in turn increases the quality of the measurement.

Nach einer vorteilhaften Ausgestaltung der Erfindung ist vorgesehen, dass zumindest eine Reflexionsfläche durch zumindest eine Einstelleinheit einstellbar ist. Diese Einstelleinheit kann vorteilhafterweise als feinmechanische Justierung, als elektrischer, hydraulischer, pneumatischer oder piezoelektronischer Aktuator ausgebildet sein. Diese Einstelleinheit muss zumindest im Mikrometerbereich Einstellungen ermöglichen, damit eine exakte Ausrichtung und Einstellung der zumindest zwei zueinander angeordneten Reflexionsflächen gegeben ist.According to an advantageous embodiment of the invention, it is provided that at least one reflection surface can be adjusted by at least one adjustment unit. This setting unit can be advantageously designed as a precision mechanical adjustment, as an electrical, hydraulic, pneumatic or piezoelectric actuator. This adjustment unit must enable adjustments at least in the micrometer range, so that an exact alignment and adjustment of the at least two mutually arranged reflection surfaces is provided.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung ist vorgesehen, dass die Spaltbreite des Kollimators einstellbar ist. Dadurch ist zusätzlich eine Möglichkeit zur Einstellung und Begrenzung der Austrittsflächen gegeben, um die Fokussierung an die Messaufgabe anzupassen.According to a further advantageous embodiment of the invention it is provided that the gap width of the collimator is adjustable. This additionally provides a possibility for setting and limiting the exit surfaces in order to adapt the focusing to the measurement task.

Anhand der nachfolgenden Zeichnungen und Beschreibungen wird ein bevorzugtes Ausführungsbeispiel näher beschrieben. Es zeigen

Figur 1
eine schematische Ansicht eines Schichtdickenmessgerätes mit einer erfindungsgemäßen Vorrichtung,
Figur 2
eine schematische Seitenansicht des in Figur 1 dargestellten Schichtdickenmessgerätes,
Figur 3
eine schematische Detaildarstellung der erfindungsgemäßen Vorrichtung und
Figur 4
eine schematisch vergrößerte Darstellung eines zum Messobjekt weisenden Ende der erfindungsgemäßen Vorrichtung.
Reference to the following drawings and descriptions, a preferred embodiment will be described in more detail. Show it
FIG. 1
a schematic view of a coating thickness gauge with a device according to the invention,
FIG. 2
1 is a schematic side view of the layer thickness measuring device shown in FIG. 1,
FIG. 3
a schematic detail of the device according to the invention and
FIG. 4
a schematically enlarged view of the measuring object facing the end of the device according to the invention.

In Figur 1 sind schematisch die wesentlichen Komponenten eines Schichtdickenmessgerätes 11 dargestellt, wobei auf die Darstellung einer Auswerteeinheit, eines Bildschirms zur Visualisierung eines durch eine Videokamera aufgenommenenFIG. 1 schematically shows the essential components of a layer thickness measuring device 11, wherein the illustration of an evaluation unit, a screen for visualizing a video camera recorded by a video camera

Meßobjektes sowie Eingabetastatur und Drucker verzichtet wurde. Dieses Schichtdickenmeßgerät 11 wird beispielsweise zur Messung von Bondpads, Kontakten, die zum Teil mit selektiver Beschichtung versehen sind, Leiterbahnen und funktionelle Beschichtungen an kleinen Flächen eingesetzt. Bevorzugt werden durch ein Schichtdickenmeßgerät 11 mit der erfindungsgemäßen Vorrichtung 12 Schichtdicken ermittelt oder geprüft, deren Meßfläche bzw. die Funktionsflächen kleiner als 100 µm x 100 µm, insbesondere kleiner als 50 µm x 50 µm sind. In einer Röntgenröhre 13 wird eine Röntgenstrahlung erzeugt, welche über eine Anode 14 auf ein Meßobjekt 16 gerichtet ist. Durch die Röntgenstrahlung wird in einer Schicht des Meßobjekts 16 eine Fluoreszenzstrahlung angeregt. Die Intensität dieser Fluoreszenzstrahlung in Abhängigkeit der Energie (Spektrum) ist eine Funktion der Schichtdicke. Dies oder der Prameter des Schichtsystems wird ausgenutzt, in dem mit Hilfe eines Detektors 17 das System der emittierten Strahlung registriert wird.DUT and input keyboard and printer was omitted. This layer thickness measuring device 11 is used, for example, for measuring bonding pads, contacts, which are provided in part with selective coating, conductor tracks and functional coatings on small areas. 12 layer thicknesses are preferably determined or tested by a Schichtdickenmeßgerät 11 with the device according to the invention, the measuring surface and the functional surfaces are smaller than 100 microns x 100 microns, especially smaller than 50 microns x 50 microns. In an X-ray tube 13, an X-ray radiation is generated, which is directed via an anode 14 to a DUT 16. The X-radiation excites fluorescence radiation in a layer of the test object 16. The intensity of this fluorescence radiation as a function of the energy (spectrum) is a function of the layer thickness. This or the parameter of the layer system is exploited by registering the system of emitted radiation with the aid of a detector 17.

Zwischen der Röntgenröhre 13 und dem Meßobjekt 16 ist die erfindungsgemäße Vorrichtung 12 vorgesehen, welche gemäß dem Ausführungsbeispiel aus zwei einander gegenüber liegenden Reflexionsflächen 18 besteht. Diese Reflexionsflächen 18 dienen zur Strahlenbündelung und Strahlenweiterleitung, so daß die Röntgenstrahlung an die Meßfläche des Meßobjekts 16 gelangt. Die Reflexionsflächen 18 sind vorzugsweise unmittelbar zur Anode 14 bzw. zu einem Austrittsflansch 21 nahe der Anode 14 angeordnet. Am unteren Ende 22 der einander zugeordneten Reflexionsflächen 18 ist des weiteren ein Kollimator 23 vorgesehen, wodurch ein Meßbereich 24 gemäß Figur 3 auf einem Meßobjekt abgebildet werden kann. Der Kollimator 23 ist vorteilhafterweise ein Spaltkollimator, dessen Spaltbreite einstellbar ist.Between the X-ray tube 13 and the measurement object 16, the device 12 according to the invention is provided, which consists of two opposing reflection surfaces 18 according to the embodiment. These reflection surfaces 18 are used for beam focusing and beam transmission, so that the X-radiation reaches the measuring surface of the test object 16. The reflection surfaces 18 are preferably arranged directly to the anode 14 or to an outlet flange 21 near the anode 14. At the lower end 22 of the mutually associated reflection surfaces 18, a collimator 23 is furthermore provided, as a result of which a measuring region 24 according to FIG. 3 can be imaged on a measurement object. The collimator 23 is advantageously a slit collimator whose slit width is adjustable.

Die Reflexionsflächen 18 sind als längliche, rechteckförmige Flächen ausgebildet, wie aus Figur 1 und Figur 2 zu entnehmen ist. Die Länge der Reflexionsflächen 18 ist im wesentlichen durch den Aufbau bestimmt sowie durch den Grad der Totalreflexion. Röntgenstrahlen, welche nicht parallel zwischen einer Achse des Meßbereichs 24 und der Anode 14 verlaufen, werden zumindest einmal durch eine Totalreflexion abgelenkt. Die Breite der Reflexionsflächen 18 sind zumindest eineinhalb mal so groß wie die maximal zu prüfende Funktionsfläche. Vorteilhafterweise werden für die Reflexionsflächen 18 Siliziumwafer verwendet. Dieses kostengünstige Grundmaterial kann auf die entsprechende Größe der erfindungsgemäßen Vorrichtung 12 einfach angepaßt werden.The reflection surfaces 18 are formed as elongated, rectangular surfaces, as can be seen from Figure 1 and Figure 2. The length of the reflection surfaces 18 is determined essentially by the structure and by the degree of total reflection. X-rays that are not parallel between an axis of the measuring area 24 and the anode 14 are deflected at least once by total reflection. The width of the reflection surfaces 18 are at least one and a half times as large as the maximum functional surface to be tested. Advantageously used for the reflection surfaces 18 silicon wafer. This inexpensive base material can be easily adapted to the appropriate size of the device 12 according to the invention.

Die aus einem Siliziumwafer hergestellten Reflexionsflächen 18 werden vorteilhafterweise auf Halteelemente 26, 27 gemäß Figur 3 aufgebracht. Vorteilhafterweise sind diese verspannungsfrei aufgeklebt, so daß die Ebenheit der Reflexionsfläche 18 aufrecht erhalten werden kann. Alternativ können die Reflexionsflächen 18 auch spannungsfrei an den Halteelementen 26, 27 durch eine Klemmung oder dergleichen fixiert werden. Gemäß Figur 3 greift an einem der beiden Halteelemente 27 eine Einstelleinheit 28 an, durch welche ein Halteelement 27 zu dem feststehenden Element 26 einstellbar ist. Das Halteelement 26 nimmt vorteilhafterweise die Reflexionsfläche 18 parallel zur Mittelachse 29 der Vorrichtung 12 auf. Durch die Einstelleinheit 28 kann die Spaltbreite eingestellt werden. Ebenso ist ermöglicht, daß die Winkligkeit des Halteelements 27 zum Element 26 einstellbar ist. Alternativ kann ebenso eine spiegelbildliche Anordnung vorgesehen sein. Ebenso kann alternativ vorgesehen sein, daß an jedem der Halteelemente 26, 27 eine Einstelleinheit 28 vorgesehen ist, wodurch die Halteelemente 26, 27 entweder parallel zueinander und/oder in einem Winkel zueinander angeordnet sein können, so daß ein gleichmäßiger oder sich verjüngender Spalt zum Meßobjekt 16 hin gebildet ist. Die Einstelleinheit 28 ist derart ausgebildet, daß Spaltbreiten beispielsweise in einem Bereich von 10 bis 100 µm wahlweise eingestellt werden können. Hierfür können feinmechanische Einstellmechanismen, piezoelektrische Aktuatoren, sowie elektrisch, hydraulisch, pneumatisch betriebene Stellantriebe vorgesehen sein.The reflecting surfaces 18 produced from a silicon wafer are advantageously applied to holding elements 26, 27 according to FIG. Advantageously, these are glued without tension, so that the flatness of the reflection surface 18 can be maintained. Alternatively, the reflection surfaces 18 can also be fixed stress-free on the holding elements 26, 27 by a clamp or the like. According to FIG. 3, an adjustment unit 28 engages on one of the two retaining elements 27, by means of which a retaining element 27 can be adjusted to the stationary element 26. The holding element 26 advantageously accommodates the reflection surface 18 parallel to the central axis 29 of the device 12. By setting unit 28, the gap width can be adjusted. It is also possible that the angularity of the holding member 27 is adjustable to the element 26. Alternatively, a mirror-image arrangement may also be provided. Likewise, it may alternatively be provided that an adjusting unit 28 is provided on each of the holding elements 26, 27, whereby the holding elements 26, 27 can be arranged either parallel to one another and / or at an angle to each other, so that a uniform or tapered gap to the test object 16 is formed. The setting unit 28 is formed such that gap widths can be set optionally in a range of 10 to 100 μm, for example. For this purpose, fine mechanical adjustment mechanisms, piezoelectric actuators, as well as electrically, hydraulically, pneumatically operated actuators can be provided.

An einem zum Meßobjekt 16 weisenden Ende ist an dem Halteelement 26 eine Abflachung 31 vorgesehen. Durch diese Abflachung ist ermöglicht, daß für die emittierte Fluoreszenzstrahlung eine hinreichende Öffnungsweite 32 zur Verfügung steht, um die emittierte Fluoreszenzstrahlung zu detektieren.At an end pointing to the test object 16, a flattening 31 is provided on the holding element 26. This flattening makes it possible for the emitted fluorescence radiation to have a sufficient opening width 32 in order to detect the emitted fluorescence radiation.

Die Reflexionsfläche 18 kann beispielsweise mit einem Edelmetall bedampft sein. Dadurch kann der kritische Winkel für die Totalreflexion, der für Silizium bei 1,5 mrad liegt, durch eine Platinbeschichtung auf 4,5 mrad erhöht werden. Dies schlägt sich wiederum vorteilhafterweise auf die Transmission der Röntgenstrahlung nieder. Alternativ ist denkbar, daß bei dem Einsatz von beschichteten Reflexionsflächen der Grundwerkstoff aus einer Quarzoberfläche oder einem Kunststoffmaterial bestehen kann, welches die Anforderung an die Ebenheit erfüllt und eine Beschichtung aufweist. Vorteilhafterweise kann die Beschichtung zumindest am Eingang der Reflexionsflächen 18 vorgesehen sein, so daß die Anzahl der eingefangenen und reflektierten Strahlen möglichst groß ist. Über den Verlauf entlang der Reflexionsflächen 18 kann die Beschichtung vollständig fortgeführt werden oder auch nur teilweise vorgesehen sein. Ebenso kann sich die Beschichtung bzw. das Material der Beschichtung in Abhängigkeit der Anwendungsfälle auch ändern. Beispielsweise kann durch Verkleinerung des Grenzwinkels für die Totalreflexion die Divergenz am Ausgang der Reflexionsflächen 18 verkleinert werden, wodurch eine Fokussierung der Strahlung und dadurch eine Intensitätserhöhung auf dem Meßbereich 24 des Meßobjektes 16 erzielt werden kann. Dazu ist beispielsweise denkbar, daß in einem Bereich nahe dem unteren Ende 22 der Reflexionsfläche 18 eine Beschichtung nicht vorgesehen ist oder eine die Totalreflexion verhindernde Beschichtung vorgesehen ist, wodurch die unterhalb der Reflexionsfläche 18 austretende Strahlung gerade auf die Größe des Meßbereiches 24 von dem Meßobjekt 16 fokusiert ist. Die Bestrahlung von Randbereichen außerhalb des Meßbereiches 24 kann dadurch erheblich verringert werden.The reflection surface 18 may, for example, be vapor-deposited with a noble metal. As a result, the critical angle for total reflection, which is 1.5 mrad for silicon, can be increased to 4.5 mrad by a platinum coating. This in turn is advantageously reflected in the transmission of the X-radiation low. Alternatively, it is conceivable that when using coated reflective surfaces of the base material may consist of a quartz surface or a plastic material that meets the requirement for flatness and has a coating. Advantageously, the coating may be provided at least at the entrance of the reflection surfaces 18, so that the number of captured and reflected rays is as large as possible. Over the course along the reflection surfaces 18, the coating can be completely continued or even provided only partially. Likewise, the coating or the material of the coating may also change depending on the applications. For example, by reducing the critical angle for the total reflection, the divergence at the exit of the reflection surfaces 18 can be reduced, whereby a focusing of the radiation and thereby an increase in intensity on the measuring region 24 of the test object 16 can be achieved. For this purpose, for example, it is conceivable that in a region near the lower end 22 of the reflection surface 18, a coating is not provided or a total reflection preventing coating is provided, whereby the emerging below the reflection surface 18 radiation just on the size of the measuring range 24 of the measurement object 16th is focused. The irradiation of edge regions outside the measuring range 24 can thereby be considerably reduced.

Durch die erfindungsgemäße Ausgestaltung der Vorrichtung 12 kann je nach Meßaufgabe der Meßbereich eingestellt werden. Der Kollimator 23 kann ebenso an diesen Meßbereich angepaßt werden, so daß durch die Fokussierung der Strahlung eine Intensitätserhöhung auf einen vorbestimmten Meßbereich ermöglicht ist.Due to the inventive design of the device 12, the measuring range can be adjusted depending on the measurement task. The collimator 23 can also be adapted to this measuring range, so that an intensity increase to a predetermined measuring range is made possible by the focusing of the radiation.

Alternativ kann vorgesehen sein, daß die Reflexionsflächen 18 zumindest leicht konkav ausgebildet sind. Ebenso kann die konkave Ausbildung sich zum unteren Ende 22 hin verjüngen, so daß eine Art sprachrohrförmige Ausgestaltung der Reflexionsflächen 18 gegeben ist. Dabei sind jedoch die Dimensionen zu berücksichtigen, die auch im Mikrometerbereich liegen können.Alternatively it can be provided that the reflection surfaces 18 are at least slightly concave. Likewise, the concave formation can taper towards the lower end 22, so that a kind of voice tube-shaped configuration of the reflection surfaces 18 is given. However, the dimensions must be taken into account, which can also be in the micrometer range.

Die Öffnungsweite der Reflexionsflächen 18 am Eingang der Vorrichtung 12 entspricht im wesentlichen der Austrittsöffnung der über die Anode ausgesandten Röntgenstrahlung. Ebenso kann auch eine geringfügig größere oder kleinere Öffnungsbreite zu dem Durchmesser des Primärspots der Röntgenstrahlung gegeben sein.The opening width of the reflection surfaces 18 at the input of the device 12 substantially corresponds to the outlet opening of the X-ray radiation emitted via the anode. Similarly, a slightly larger or smaller opening width be given to the diameter of the primary spot of the X-radiation.

Die Vorrichtung 12 kann des weiteren noch Öffnungen und Aufnahmen aufweisen, welche zur Anordnung einer Optik dienen, um den Meßgegenstand 16 durch eine Videokamera zu visualisieren.The device 12 may further include openings and receptacles which serve to arrange an optic to visualize the measurement subject 16 by a video camera.

Die Vorrichtung 12 ist gemäß dem Ausführungsbeispiel durch zwei zueinander angeordneten Reflexionsflächen 18, die parallel oder in einem spitzen Winkel zueinander angeordnet sind, vorgesehen. Es kann auch vorgesehen sein, daß anstelle von diesen zwei Reflexionsflächen 18, drei oder mehrere Reflexionsflächen in geeigneter Weise zueinander angeordnet sind, um die Transmission von Röntgenstrahlung zum Meßbereich 24 eines Meßobjektes 16 zu ermöglichen, so daß durch die Fokussierung der Röntgenstrahlung eine Intensitätserhöhung ermöglicht ist. Es ist jedoch nicht, wie aus dem Stand der Technik bekannt, erforderlich, daß eine geschlossene, röhrenförmige Anordnung eingesetzt wird, um die Röntgenstrahlen zum Meßbereich durch Totalreflexion zu fokussieren. Weitere geometrische Ausgestaltungen der Reflexionsflächen 18 sind ebenso denkbar, welche die Totalreflexion der Röntgenstrahlung ermöglichen.The device 12 is provided according to the embodiment by two mutually arranged reflection surfaces 18, which are arranged parallel or at an acute angle to each other. It can also be provided that instead of these two reflection surfaces 18, three or more reflection surfaces are arranged in a suitable manner to each other to allow the transmission of X-rays to the measuring range 24 of a DUT 16, so that by focusing the X-ray radiation, an increase in intensity is possible , However, it is not necessary, as known in the art, for a closed tubular arrangement to be used to focus the X-rays toward the measurement area by total reflection. Further geometric configurations of the reflection surfaces 18 are also conceivable, which enable the total reflection of the X-ray radiation.

Claims (11)

  1. An apparatus for guiding x-rays from a radiation source to a measurement object (16) having at least two reflecting areas (18) forming a beam, characterized in that the at least two reflecting areas (18) being opposite to one another, which are of planar design and providing a slit that tapers towards the measurement object (16) and that a collimator (23) is provided to the reflecting areas (18) at an end of the reflecting areas (18) pointing towards the measurement object (16).
  2. Apparatus according to claim 1, characterized in that the slit formed by the at least two reflecting areas (18) has an adjustable width.
  3. Apparatus according to one of the preceding claims, characterized in that at least one reflecting area (18) is fixed and at least one further reflecting area (18) is adjustable in distance and/or angle.
  4. Apparatus according to one of the preceding claims, characterized in that at least one reflecting area (18)of the at least two reflecting areas (18) forming a slit is arranged substantially directly at the beam exit of the beam exit opening.
  5. Apparatus according to one of the preceding claims, characterized in that the reflecting areas (18) are made of a semiconductor material, in particular of a silicon wafer material.
  6. Apparatus according to one of the preceding claims, characterized in that the at least one reflecting area (18) is at least partly coated with a noble metal, preferably of gold, platinum, copper, silver or palladium.
  7. Apparatus according to claim 6, characterized in that the at least two reflecting areas (18) forming a slit having at least a partly coating, which is provided at an end facing towards the beam exit of the radiation source.
  8. Apparatus according to claim 6 or 7, characterized in that the at least partly coated reflecting area (18) near to the measurement object (16) comprises a region without a coating or having a coating that prevents total reflection.
  9. Apparatus according to one of the claims 1 to 7, characterized in that the uncoated reflecting area (18) near the measurement object (16) comprises a region having a coating preventing total reflection.
  10. Apparatus according to one of the preceding claims, characterized in that at least one of the reflecting areas (18) is provided to an adjusting unit that adjusts the aperture width of the slit.
  11. Apparatus according to one of the preceding claims, characterized in that the width of the slit formed by the collimator (23) is adjustable.
EP00123501A 1999-11-12 2000-10-27 X-ray guiding device Expired - Lifetime EP1100092B1 (en)

Applications Claiming Priority (2)

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DE19954520A DE19954520A1 (en) 1999-11-12 1999-11-12 Device for guiding X-rays
DE19954520 1999-11-12

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EP1100092A3 EP1100092A3 (en) 2003-03-26
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JP (1) JP2001201599A (en)
CN (1) CN1202416C (en)
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DE102022105838B3 (en) 2022-03-14 2023-08-17 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Adjusting unit for X-ray optics in an X-ray fluorescence device and X-ray fluorescence device

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DE102022105838B3 (en) 2022-03-14 2023-08-17 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Adjusting unit for X-ray optics in an X-ray fluorescence device and X-ray fluorescence device
WO2023174596A1 (en) 2022-03-14 2023-09-21 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Adjusting unit for an x-ray optical element in an x-ray fluorescence system, and x-ray fluorescence system

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CN1202416C (en) 2005-05-18
DE19954520A1 (en) 2001-05-17
ATE333702T1 (en) 2006-08-15
EP1100092A3 (en) 2003-03-26
EP1100092A2 (en) 2001-05-16
CN1296178A (en) 2001-05-23
DE50013184D1 (en) 2006-08-31
US6438209B1 (en) 2002-08-20
JP2001201599A (en) 2001-07-27

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