EP1080613B1 - Vorrichtung zur erzeugung eines magnetischen feldes innerhalb eines gefässes - Google Patents

Vorrichtung zur erzeugung eines magnetischen feldes innerhalb eines gefässes Download PDF

Info

Publication number
EP1080613B1
EP1080613B1 EP99920915A EP99920915A EP1080613B1 EP 1080613 B1 EP1080613 B1 EP 1080613B1 EP 99920915 A EP99920915 A EP 99920915A EP 99920915 A EP99920915 A EP 99920915A EP 1080613 B1 EP1080613 B1 EP 1080613B1
Authority
EP
European Patent Office
Prior art keywords
enclosure
magnetic field
plasma
ions
configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP99920915A
Other languages
English (en)
French (fr)
Other versions
EP1080613A1 (de
Inventor
Pascal Sortais
Claude Bieth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pantechnik
Original Assignee
Pantechnik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pantechnik filed Critical Pantechnik
Publication of EP1080613A1 publication Critical patent/EP1080613A1/de
Application granted granted Critical
Publication of EP1080613B1 publication Critical patent/EP1080613B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/10—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball

Definitions

  • the present invention relates to a device for creating a magnetic field inside an enclosure.
  • the present invention relates to a device intended to create a magnetic field in order to confine a plasma inside an enclosure.
  • Plasmas are ionized gases, electrically mixed neutral ions and electrons, used in industry, in particular, for make very thin deposits on surfaces.
  • Plasma can be created by various methods, for example, from non-ionized atoms which we bring, in the form of vapor, in an enclosure containing a magnetic field having a configuration determined.
  • the term configuration takes into account both the spatial geometry of the magnetic field and its intensity at any point the space where he reigns.
  • the configuration of the control mainly depends on the arrangement of magnetic field generating means around the enclosure. By placing them appropriately, we can achieve in the enclosure a field having the desired configuration.
  • the electrons, torn from the nuclei of atoms under the effect of the high frequency wave, are subjected to the magnetic field B and describe then spiral movements while colliding with the other atoms surrounding, thus causing their ionization.
  • the ions and electrons constituting the plasma cannot describe as spiral trajectories, the plasma is thus confined in a restricted volume delimited by the magnetic field B, that is to say that this serves, in a way, as an intangible plasma container.
  • the shocks between atoms and electrons accelerate the ionization of gas atoms not ionized or already ionized. It is thus possible to tear off several electrons to the same atom and form multi-charged ions.
  • the magnetic field prevailing in the enclosure is produced by permanent magnets or coils placed outside of the enclosure.
  • the intensity of the field used is between 0.01 T and several Teslas.
  • the fields generated by these magnets or coils do create a configuration magnetic field determined, that in very small volumes, of the order of a few liters.
  • This cooling device requires having the superconductive coils at a distance of at least 5 cm from the walls of the enclosure, which considerably hinders the establishment of a field magnetic of arbitrary configuration inside the enclosure.
  • the aim of the present invention is to solve the problems techniques posed by the prior art.
  • the magnetic field generating means are arranged at a distance from the wall of the enclosure between 1 mm and 50 mm.
  • the device using superconductive materials between 16 K and 273K it is then possible to get rid of the refrigeration using liquid helium.
  • a "Cryocooler” type cryogenic system which not only allows the approximation of the coils, but also, has the advantage of being less bulky, less expensive and more flexible and safer to use than helium cryogenic system. The cost of installation is so greatly reduced and the safety of the installation improved.
  • a device using a conventional helium cryogenic system generally occupies a volume of 1 m 3 and weighs several hundred kilos.
  • a device using a cryogenic system of the "Cryocooler" type occupies a volume of only a few tens of liters.
  • Such a device can be used, for example, to confine a plasma produced in another device.
  • the very small distance between the wall and the generating means allows to establish, at any point located inside a volume enclosure any magnetic field of the order of 1 to 5 T sufficient to multiple applications.
  • this device also comprises a system injecting atoms into the enclosure and an ion extraction system and electrons from the plasma contained in the enclosure. Such a device can then be integrated into the structure of various devices.
  • this device will also comprise a ionization system of the atoms injected into the enclosure.
  • the device will also comprise a device for guiding a high frequency wave inside said wave pregnant.
  • a device for guiding a high frequency wave inside said wave pregnant makes it possible to achieve ionization of the atoms by generating electronic cyclotron resonance (ECR), as exposed in the prior art.
  • ECR electronic cyclotron resonance
  • This method has the advantage of not using of filament which, when consumed, reduce the life of the device whole.
  • such a device can further comprise an extraction system making it possible to obtain a wide beam delimiting an area of approximately 1 m 2 . It could then be used, for example, for the production of wide beams, or the production of an apparatus intended to treat surfaces on an industrial scale. Since the volume magnetized by the device according to the present invention can be very large, the part to be treated can be completely immersed in the plasma. Its processing is then much easier and faster than with a beam that must be moved on the surface of said part. The deposit thus made is perfectly uniform.
  • the device according to the present invention further includes a heavy element extraction system likely to be contained in plasma.
  • the device according to the present invention further comprises means for regulating the intensity of the current electric traversing at least one winding.
  • means of regulation can be, for example, simple potentiometers. It is possible to combine means for regulating the intensity of the current in the winding with one or more displacement members of said winding or other magnetic field generating means.
  • One use of the device according to the present invention is production of devices for the production of plasmas.
  • Another possible example of using the device according to the invention is the production of an apparatus intended for the production of rays X using the ECR atom ionization method, previously exposed.
  • a third example of application of the device according to the invention is the implementation of a surface treatment device.
  • Figure 1a shows a particular embodiment to obtain a magnetic field B prevailing in an enclosure 10 and having a cylindrical geometry with respect to an axis of symmetry z.
  • Five coils, 20, 21, 22, 23 and 24 create an axial magnetic field Bz, i.e. parallel to the z axis.
  • the coils 20, 21, 22, 23 and 24 are contained in an envelope 30 connected, for example, to a Cryocooler (not shown in Figure 1a), so as to maintain them at a temperature between 16K and 273K.
  • These windings are connected to potentiometers to regulate the intensity of the current passing through them and therefore adjust the intensity of the axial component, which allows modify the configuration of the prevailing field in enclosure 10.
  • Figure 1b shows the different configurations of the axial component that it is possible to obtain with such a device, in varying the intensity of the current flowing through the windings.
  • Each curve represents the shape of the module of the axial component of the field magnetic reigning in the enclosure as a function of the position on the z axis.
  • the maximum intensity of this component is of the order of a few teslas and depends on the cyclotron resonance frequency.
  • the curves 100, 101 and 102 all have two maximum values different and a minimum value that can form a plateau, as is the case on curve 102.
  • Curve 103 is almost flat.
  • the curves 104 and 105 only have a maximum value whose position on the z axis is adjustable by adjusting the intensity of the current in the windings, for example, using potentiometers.
  • the intensity of current in said coils will, for example, be of the order of a few hundreds of amps.
  • FIG. 2a schematically represents an embodiment of the present invention.
  • Five coils 20, 22, 24, 26 and 28 of superconductive materials maintained at a temperature between 16 K and 273 K are arranged respectively in a connected envelope 30 to a suitable cryogenic system 40, for example, a Cryocooler which maintains them at a temperature of the order of 30 K; envelope 30 being itself at room temperature.
  • a suitable cryogenic system 40 for example, a Cryocooler which maintains them at a temperature of the order of 30 K; envelope 30 being itself at room temperature.
  • enclosure 10 comprising an orifice 12 input of the material in the form of a gas consisting of atoms and a plasma outlet 14 capable of being generated or injected into enclosure 10.
  • This device can also be provided with an ionization system 46 atoms introduced into the enclosure.
  • This ionization system is by example, either a filament, a waveguide, or an optical system allowing to bring a high frequency wave in the enclosure 10.
  • On can also provide a number of windings suitable for dimensions of the enclosure to be magnetized.
  • a conventional extraction system 50 intended for extract the components of the plasma generated in the enclosure 10 and a injection system 52 will complete the device which can then receive a plasma or atoms inside the enclosure 10.
  • the field then advantageously has the configuration shown in Figure 2b.
  • the magnetic field has at least a value at which the electronic cyclotron resonance is obtained with any field geometry.
  • the windings are arranged as close as possible to the plasma chamber to minimize the magnetized volume.
  • Figure 3a shows schematically an apparatus for generate multi-charged ion plasmas, that is to say comprising several positive charges.
  • the device further comprises a system for generating a multipolar magnetic field 60 comprising superconductive coils or permanent magnets and a high frequency wave guiding system (not shown in FIG. 3a) inside the enclosure 10 so as to generate the plasma by electronic cyclotron resonance.
  • a system for generating a multipolar magnetic field 60 comprising superconductive coils or permanent magnets and a high frequency wave guiding system (not shown in FIG. 3a) inside the enclosure 10 so as to generate the plasma by electronic cyclotron resonance.
  • the coils 20, 21 and 22 are preferably placed around the enclosure 10 and placed at a distance I of the order of a few millimeters.
  • Each winding is contained in an envelope 30, 31, 32 connected to a cryogenic system. Several systems can also be provided cryogenic, one for each envelope.
  • Figure 3b shows a preferred configuration of the field magnetic along a section of the chamber along an axis perpendicular to the z axis located in the middle of the enclosure in the case of a magnetic field B having a cylindrical symmetry with respect to this z axis.
  • the magnetic field module B has two maximums B1 and B2 surrounding a minimum value B3 intermediate to these two maxima.
  • the value of these maxima is greater than the value B ECR for which the cyclotronic resonance is obtained.
  • This value B ECR depends on the nature of the atoms used and the high frequency wave brought into the enclosure 10.
  • the minimum value B3 is less than B ECR ⁇ This type of configuration of the magnetic field is given only as indicative; it is obviously possible to establish a magnetic field of arbitrary configuration inside the enclosure 10.
  • Figure 4 shows an embodiment of the present invention for treating surfaces using large plasmas and uniform in density.
  • FIG. 4 for simplicity, a single coil 20 has been represented.
  • This coil 20 is contained in an envelope 30 connected to a suitable cryogenic system, keeping it at a temperature between 16 K and 273 K.
  • the extraction system 70 comprises a grid 74 of so as to produce a wide plasma beam which will be applied to a fixed or mobile substrate S under the device.
  • the surface to be treated of the substrate S is located at an adjustable distance R, of the order of several tens of centimeters, for example. We can also imagine diving directly the surface to be treated in the plasma.
  • the guidance system of the wave has several waveguides 200, 201, 202, 203, 204, 205, 206, and 207 arranged along the enclosure 10 and intended to bring there a frequency wave higher than 900Mhz, with a distribution uniform power density of this HF wave
  • the magnetic field B prevailing in the enclosure 10 is intense and uniform preferably its intensity is greater than 0.01 T.
  • the magnetizable volume can be extremely large, it is possible to extract long and wide beams representing an area of approximately 1 m 2 . It is then possible to treat very large areas quickly and obtain a regular deposit.
  • FIG. 5a schematically represents a fourth mode of realization of the present invention which can be used for production X-rays.
  • the device comprises a system 58 for guiding a wave of frequency preferably greater than 2.45 Ghz, inside the enclosure 10.
  • the generator means comprising several windings, 20, 21, 22, 23, 24 are arranged along the z axis.
  • the magnetic field generated in the enclosure assuming that it has an axi-cylindrical geometry, to simplify its representation, has a configuration of preference similar to that shown in Figure 5b.
  • the magnetic field module presents along the axis of symmetry z two maxima B1 and B2, at values greater than R ECR and a plateau, B3, whose value is equal to R ECR .
  • the atoms confined between these two maxima undergo shocks between them and with the electrons which were torn from them.
  • An electron strongly linked to the nucleus is torn from the atom, a electron located near the nucleus but less linked to it than the electron previously torn off fills the void left by the electron before.
  • This passage is carried out with an emission of photons at high energy like X-rays.
  • This type of device also allows to obtain a magnetic field of arbitrary geometry in the enclosure 10.
  • Each embodiment previously exposed must additionally comprise displacement members of at least part magnetic field generating means. It is then possible to modulate the configuration of the magnetic field prevailing in the enclosure by moving the magnetic field generating means. We can thus modify, at any point inside the enclosure, the direction of the vector magnetic field and its intensity.
  • the coils are fixed on displacement members, for example in translation along the plasma chamber, comprising for example screws allowing a precise movement of the windings. This modulates the configuration of the magnetic field B prevailing in the enclosure.
  • potentiometers intended for regulate the intensity of the current flowing through the windings.
  • the generator means being close to the wall, it is easy modify the configuration of the control with finesse and precision magnetic reigning in the enclosure, that is to say, its intensity and its geometry. We can thus create, in any volume, a field magnetic of any geometry.
  • field modulation magnetic has several advantages.
  • the bedroom has dimensions dependent on the high frequency wave which ionizes atoms.
  • the magnetic field is also coupled to this wave.
  • the fact of being able to modulate the intensity of the B field allows the use of different frequencies and thus get the cyclotron resonance electronics for several kinds of ions from different elements.
  • the shape of the windings can be variable, i.e., by example, circular or square, depending on the field to create in enclosure 10.
  • the magnetic configuration of the field also determines the type of ion formed.
  • the device according to the present invention therefore makes it possible to produce different field configurations suitable for training different types of ions.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Particle Accelerators (AREA)

Claims (10)

  1. Vorrichtung mit einem Raum (10), die zur Erzeugung eines magnetischen Feldes (B) im Inneren des Raumes bestimmt ist, der wenigstens einen Stoff in atomarem Zustand in der Dampfphase aufnehmen kann, um daraus die Ionen, Elektronen oder elektromagnetischen Strahlungen (14), die aus der Ionisation dieses Stoffes stammen, zu extrahieren, die insbesondere aufweist:
    Magnetfelderzeugungsmittel (20, 21, 22, 24, 26, 28), die geeignet sind, wenigstens teilweise den Raum (10) zu umgeben, indem sie in einem Abstand (L, I) von der Wand des Raumes (10), zwischen 1 mm und 50 mm von der Wand (11) des Raumes (10), platziert sind, und die wenigstens eine Wicklung, die mit einem Material hergestellt ist, das supraleitende Eigenschaften zwischen 16 K und 273 K hat, sowie ein Tiefsttemperatursystem (40) aufweisen, das dazu bestimmt ist, die Magnetfelderzeugungsmittel auf dieser Temperatur zu halten, dadurch gekennzeichnet, dass sie außerdem Elemente zum Verschieben von wenigstens einem Teil der Magnetfelderzeugungsmittel aufweist, die die Konfiguration des in dem Raum (10) vorhandenen magnetischen Feldes zu modulieren gestatten, um verschiedene Arten von Ionen zu produzieren und für jede von ihnen die Elektronenzyklotronresonanz (ECR) zu erhalten.
  2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass sie außerdem aufweist:
    ein System zur Injektion (52) der Atome in den Raum (10),
    ein System zur Extraktion (50) der Ionen und Elektronen aus dem in dem Raum (10) gebildeten Plasma.
  3. Vorrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass sie außerdem eine Vorrichtung zur Ionisierung (46) der in den Raum (10) injizierten Atome aufweist.
  4. Vorrichtung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass sie außerdem eine Vorrichtung zum Führen (46) einer Hochfrequenzwelle ins Innere des Raumes aufweist.
  5. Vorrichtung nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass sie außerdem
    ein Extraktionssystem (74), das es ermöglicht ein breites Bündel, das eine Fläche von etwa 1 m2 begrenzt zu erhalten, aufweist
  6. Vorrichtung nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass sie außerdem
    ein System zur Extraktion der schweren Ionen, die in dem Plasma enthalten sein können,
    aufweist.
  7. Vorrichtung nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass sie außerdem Mittel zur Regulierung der Intensität des die Wicklung durchlaufenden elektrischen Stromes aufweist.
  8. Verwendung der Vorrichtung nach einem der Ansprüche 1 bis 7 zur Realisierung eines Gerätes, das für die Plasmaproduktion bestimmt ist.
  9. Verwendung der Vorrichtung nach einem der Ansprüche 1 bis 7 zur Realisierung eines Gerätes, das für die Produktion von Röntgenstrahlen bestimmt ist.
  10. Verwendung der Vorrichtung nach einem der Ansprüche 1 bis 7 zur Realisierung eines Gerätes, das für die Behandlung der Oberflächen bestimmt ist.
EP99920915A 1998-05-26 1999-05-26 Vorrichtung zur erzeugung eines magnetischen feldes innerhalb eines gefässes Expired - Lifetime EP1080613B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9806579A FR2779315B1 (fr) 1998-05-26 1998-05-26 Dispositif destine a creer un champ magnetique a l'interieur d'une enceinte
FR9806579 1998-05-26
PCT/FR1999/001223 WO1999062307A1 (fr) 1998-05-26 1999-05-26 Dispositif destine a creer un champ magnetique a l'interieur d'une enceinte

Publications (2)

Publication Number Publication Date
EP1080613A1 EP1080613A1 (de) 2001-03-07
EP1080613B1 true EP1080613B1 (de) 2004-03-03

Family

ID=9526695

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99920915A Expired - Lifetime EP1080613B1 (de) 1998-05-26 1999-05-26 Vorrichtung zur erzeugung eines magnetischen feldes innerhalb eines gefässes

Country Status (6)

Country Link
EP (1) EP1080613B1 (de)
JP (1) JP2002517078A (de)
AU (1) AU3831399A (de)
DE (1) DE69915282T2 (de)
FR (1) FR2779315B1 (de)
WO (1) WO1999062307A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8374662B2 (en) * 2010-03-22 2013-02-12 The Boeing Company Particle trap employing a high temperature superconductor and an associated method of trapping particles
JP6642612B2 (ja) * 2018-04-12 2020-02-05 日新イオン機器株式会社 イオン源、イオンビーム照射装置及びイオン源の運転方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1244975B (de) * 1963-01-09 1967-07-20 Siemens Ag Anordnung zur Erzeugung von magnetischen Stabilisierungsfeldern fuer Hochtemperatur-Plasmaentladungen
JPS6410555A (en) * 1987-07-03 1989-01-13 Jeol Ltd Focus ion beam device
JPS6432634A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Plasma treater

Also Published As

Publication number Publication date
DE69915282D1 (de) 2004-04-08
EP1080613A1 (de) 2001-03-07
DE69915282T2 (de) 2005-03-10
FR2779315A1 (fr) 1999-12-03
FR2779315B1 (fr) 2000-08-18
AU3831399A (en) 1999-12-13
JP2002517078A (ja) 2002-06-11
WO1999062307A1 (fr) 1999-12-02

Similar Documents

Publication Publication Date Title
EP0209469B1 (de) Verfahren und Apparat zur Mikrowellenanregung eines Plasmas bei der Elektronen-Zyklotronen-Resonanz
Degeling et al. Plasma production from helicon waves
Carter et al. Comparing experiments with modeling for light ion helicon plasma sources
Okamoto et al. Experimental observation of a tripolar vortex in a plasma
EP0238397B1 (de) Elektronenzyklotronresonanz-Ionenquelle mit koaxialer Injektion elektromagnetischer Wellen
EP0685143B1 (de) Lineare mikrowellenquelle zur plasmabehandlung von flächen.
EP2873306B1 (de) Koaxialer mikrowellenapplikator zur plasmaerzeugung
EP1080613B1 (de) Vorrichtung zur erzeugung eines magnetischen feldes innerhalb eines gefässes
FR2631199A1 (fr) Reacteur a plasma
WO2008009558A1 (fr) Dispositif et procédé de production et de confinement d'un plasma
EP0946961B1 (de) Magnetische vorrichtung, insbesondere fuer elektronzyklotronresonanzionenquellen, die die erzeugung geschlossener oberflaechen mit konstanter magnetfeldstaerke b und beliebiger groesse ermoeglichen
EP0527082B1 (de) Elektroncyclotionresonanz-Ionenquelle vom Wellenleiter-Typ zur Erzeugung mehrfachgeladenen Ionen
EP0499514B1 (de) Modenwandler und Leistungsteiler-Einrichtung für eine Mikrowellenröhre, und Mikrowellenröhre mit einer solchen Einrichtung
EP2311061B1 (de) Elektronenzyklotronresonanzionengenerator
FR2969372A1 (fr) Dispositif d’ionisation a la resonance cyclotron electronique
EP0813223B1 (de) Magnetfelderzeugungsvorrichtung und ECR Ionenquelle dafür
Sun A study of ion acceleration, asymmetric optical pumping and low frequency waves in two expanding helicon plasmas
EP0932183A1 (de) Lineare Mikrowellenplasmaquelle mit Permanentmagneten
FR3114476A1 (fr) Dispositif d’excitation pour transformer un gaz en plasma dans un tube capillaire diélectrique et accélérateur laser-plasma.
Nanobashvili et al. Low Frequency Oscillations of Plasma Injected in Open Magnetic Trap from Independent Ultra-high Frequency Source
Lavoie Production of pure ion beams by laser ionization and a fast release RFQ
WO1999003314A1 (fr) Cyclotron compact et son utilisation en proton therapie
McKee Microwave Enhanced Electron Energy Distribution Functions
Kline Slow wave ion heating and parametric instabilities in the HELIX helicon source
Okamoto et al. Anti-ExB flow field associated with a vortex formation in a partially ionized plasma

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20001122

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): BE DE DK ES FI FR GB IT NL SE

17Q First examination report despatched

Effective date: 20020802

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): BE DE DK ES FI FR GB IT NL SE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040303

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040303

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REF Corresponds to:

Ref document number: 69915282

Country of ref document: DE

Date of ref document: 20040408

Kind code of ref document: P

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20040531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040603

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040603

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040614

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 20040615

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
BERE Be: lapsed

Owner name: PANTECHNIK

Effective date: 20040531

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20041206

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20090523

Year of fee payment: 11

Ref country code: DE

Payment date: 20090512

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20090505

Year of fee payment: 11

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20100526

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100526

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20101201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100526

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20130605

Year of fee payment: 15

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20150130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140602