EP1047150B1 - Thin film wide band coupler - Google Patents

Thin film wide band coupler Download PDF

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Publication number
EP1047150B1
EP1047150B1 EP00201151A EP00201151A EP1047150B1 EP 1047150 B1 EP1047150 B1 EP 1047150B1 EP 00201151 A EP00201151 A EP 00201151A EP 00201151 A EP00201151 A EP 00201151A EP 1047150 B1 EP1047150 B1 EP 1047150B1
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EP
European Patent Office
Prior art keywords
coupler
thin
loop
film
component
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EP00201151A
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German (de)
French (fr)
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EP1047150A1 (en
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Hans-Peter Löbl
Rainer Kiewitt
Mareike Klee
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Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
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Philips Corporate Intellectual Property GmbH
Philips Patentverwaltung GmbH
Koninklijke Philips Electronics NV
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
    • H01P5/184Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips

Definitions

  • the invention relates to a thin-film coupler with a carrier substrate and two overlying it Strip lines, one of which is the main coupler loop and one is the Auxiliary coupler loop is.
  • Couplers provide, among other things, high-frequency components for cell phones or base stations represents the decoupling of RF signals between the output of a power amplifier and enable an antenna.
  • the decoupled signal is used to Regulate output power of the amplifier.
  • Such a coupler has two, for example Coupler loops, one of which is the main loop and the transmission signal should be transmitted as losslessly as possible.
  • the second loop the so-called secondary loop, decouples a small signal compared to the transmission signal.
  • Such couplers are known in various embodiments.
  • Multi-layer ceramic coupler With these ceramic couplers, the Electrode structures printed on ceramic foils, the foils are stacked and then sintered into components.
  • the disadvantage of this printing process is the coarse-grained Morphology of the electrodes, which results in a higher electrical resistance Has.
  • EP 0 298 434 describes a thin-film coupler based on a dielectric Substrate several coupled strip lines with a closely adjacent course having. To ensure a phase difference of 90 ° is approximately in the middle Coupling path inserted an ohmic resistor.
  • EP 0 641 037 describes a coupler with two strip lines, the Strip lines are applied and connected such that they have a coil with one or form more turns.
  • EP 0 522 524 describes a coupler which has two inductors in the form of two Strip lines between two pairs of gates and two groups of capacitors, each connected to a pair of the gates.
  • the invention has for its object an inexpensive, compact coupler to provide the same coupling at several frequencies.
  • a thin-film coupler with a carrier substrate and two strip lines above, one of which is the main coupler loop and one is the secondary coupler loop, in which a component is in the secondary coupler loop is integrated, which is a phase shift in the frequency of the coupled signal causes a coil is integrated as a component in the secondary coupler loop.
  • Couplers usually show a strong frequency dependence of the coupling. By the Installation of a coil in the secondary coupler loop increases the bandwidth of the coupling.
  • a coil can be easily integrated into the secondary coupler loop by they also have a stripline design and thus in the same process step as the rest of the Auxiliary coupler loop is executed.
  • a coil can also be used with the help of others Thin-film techniques are shown and then with the secondary coupler loop be contacted electrically.
  • the thin-film coupler is in the Secondary coupler loop a coil and a series or parallel capacitor integrated.
  • a ceramic material, a ceramic material be used as the material for the carrier substrate Material with a planarization layer made of glass, a glass-ceramic material or a glass material is used.
  • a carrier substrate made of these materials is inexpensive Manufacture and process costs for this component can be kept low become.
  • each end of a coupler loop has one Power supply is in electrical contact.
  • each component can be combined with other components Circuit are electrically connected.
  • Component assembly can be a galvanic SMD end contact or a power supply Bump-end contact or a contact surface can be used. By using it Discrete components can be produced from SMD end contacts or bump-end contacts become.
  • At least one protective layer over the thin film coupler applied from an inorganic material and / or an organic material is.
  • the protective layer protects the component from mechanical stress and Corrosion protected by moisture.
  • This metallic layer serves as the ground plane.
  • the metallic layer is connected to at least one further power supply.
  • a thin-film coupler has a carrier substrate 1, which, for example a ceramic material, a ceramic material with a planarization layer made of glass, a glass-ceramic material or a glass material contains.
  • a main coupler loop 2 and a secondary coupler loop 3 are applied on the carrier substrate 1. Both loops can, for example, be of the stripline type and Cu, Al, Ag, Au or a combination of these metals.
  • the secondary coupler loop 3 is a component 4 which shifts the frequency of the decoupled signal.
  • four power leads 5 are attached to the thin-film coupler, each of which two power supplies connected to each other via one of the two coupler loops are.
  • a galvanic SMD end contact for example, can be used as the power supply 5 Cr / Cu, Ni / Sn or Cr / Cu, Cu / Ni / Sn or Cr / Ni, Pb / Sn or a bump-end contact or a contact surface can be used.
  • phase-shifting component 4 can also loop like the coupler are designed in stripline design and directly into the secondary coupler loop 3 can be integrated.
  • the phase-shifting component 4 can, for example can also be produced using thin-film techniques and then with the secondary coupler loop 3 can be electrically contacted.
  • the secondary coupler loop 3 is designed with one turn, so that it through their shape also acts as a coil and causes a phase shift.
  • the secondary coupler loop 3 is designed with turns, so that it through their Form also acts as a coil and causes a phase shift.
  • a protective layer made of an organic and / or inorganic material can be applied over the entire thin-film coupler.
  • polybenzocyclobutene or polyimide can be used as the organic material and Si 3 N 4 , SiO 2 or Si x O y N z (0 x x 1 1, 0 y y 1 1, 0 ⁇ z 1 1), for example, can be used as the inorganic material ,
  • a metallic layer can be on the back of the carrier substrate 1 for example Cu contains to be applied.
  • this metallic layer be connected to at least one further power supply.
  • a main coupler loop 2 and a secondary coupler loop 3 made of Cu with a width of 115 ⁇ m were applied to a carrier substrate 1 made of Al 2 O 3 with a thickness of 0.43 mm.
  • the distance between the main coupler loop 2 and the secondary coupler loop 3 is 35 ⁇ m.
  • the length of the coupler path between the two coupler loops is divided into two 1.45 mm long sections, which are connected by a thin-layer coil with 5.3 turns, with an inner turn radius of 50 ⁇ m, a distance between the turns of 20 ⁇ m and a coil turn width of 30 ⁇ m.
  • a Cr / Cu, Cu / Ni / Sn SMD end contact is attached as a power supply 5.
  • IL stands for insertion loss
  • C for Coupling (coupling)
  • I for isolation.
  • a main coupler loop 2 and a secondary coupler loop 3 made of Cu with a width of 115 ⁇ m were applied to a carrier substrate 1 made of Al 2 O 3 with a thickness of 0.43 mm.
  • the distance between the main coupler loop 2 and the secondary coupler loop 3 is 35 ⁇ m.
  • the length of the coupler path between the two coupler loops is divided into two 1.45 mm long sections, which were connected by a thin-film coil made of Cu with an inductance of 5.4 nH and a parallel-connected thin-film capacitor with a capacitance of 1 pF.
  • the thin film capacitor contains a lower and an upper electrode made of Al and a dielectric made of Si 3 N 4 .
  • a Cr / Cu, Cu / Ni / Sn SMD end contact is attached as power supply 5.
  • IL stands for insertion loss
  • C for Coupling (coupling)
  • I for isolation.

Description

Der Erfindung betrifft einen Dünnschichtkoppler mit einem Trägersubstrat und zwei darüberliegenden Streifenleitungen, von denen eine die Hauptkopplerschleife und eine die Nebenkopplerschleife ist.The invention relates to a thin-film coupler with a carrier substrate and two overlying it Strip lines, one of which is the main coupler loop and one is the Auxiliary coupler loop is.

Koppler stellen unter anderem Hochfrequenzbauteile für Mobiltelefone oder Basisstationen dar, die das Auskoppeln von HF-Signalen zwischen dem Ausgang eines Leistungsverstärkers und einer Antenne ermöglichen. Das ausgekoppelte Signal wird verwendet, um die Ausgangsleistung des Verstärkers zu regeln. Ein solcher Koppler weist beispielsweise zwei Kopplerschleifen auf, von denen eine Schleife die Hauptschleife darstellt und das Sendesignal möglichst verlustfrei übertragen soll. Die zweite Schleife, die sogenannte Nebenschleife, koppelt im Vergleich mit dem Sendesignal ein kleines Signal aus.Couplers provide, among other things, high-frequency components for cell phones or base stations represents the decoupling of RF signals between the output of a power amplifier and enable an antenna. The decoupled signal is used to Regulate output power of the amplifier. Such a coupler has two, for example Coupler loops, one of which is the main loop and the transmission signal should be transmitted as losslessly as possible. The second loop, the so-called secondary loop, decouples a small signal compared to the transmission signal.

Bekannt sind solche Koppler in verschiedenen Ausführungsformen. Zum einen gibt es Koppler in keramischer Vielschichtbauweise. Bei diesen keramischen Kopplern werden die Elektrodenstrukturen auf keramische Folien gedruckt, die Folien werden gestapelt und dann zu Bauelementen gesintert. Der Nachteil bei diesem Druckverfahren ist die grobkörnige Morphologie der Elektroden, was einen höheren elektrischen Widerstand zur Folge hat.Such couplers are known in various embodiments. For one thing, there is Multi-layer ceramic coupler. With these ceramic couplers, the Electrode structures printed on ceramic foils, the foils are stacked and then sintered into components. The disadvantage of this printing process is the coarse-grained Morphology of the electrodes, which results in a higher electrical resistance Has.

Daneben gibt es Ausführungen in Mikrostreifenausführung. In 1991 IEEE MTT-S International Microwave Symposium Digest, Volume II, 857-860 wird ein Dünnschichtkoppler beschrieben, der zwei Streifenleitungen als Kopplerschleifen aufweist. Aufgebracht sind die beiden Kopplerschleifen auf einem dielektrischen Substrat mit hoher dielektrischer Konstante K. Auf der Rückseite des keramischen Substrats befindet sich als Erdungsebene noch eine metallische Schicht. Außerdem sind am Bauelement sechs Endkontakte befestigt, von denen jeweils zwei in Kontakt mit einer Kopplerschleife stehen und zwei mit der Erdungsebene verbunden sind. Die Verwendung eines dielektrischen Substrates mit hoher dielektrischer Konstante hat den Vorteil, dass das Bauelement in einer kompakten Baugröße realisiert werden kann. Ein großer Nachteil ist aber, dass diese Substrate deutlich teurer sind als beispielsweise Glas oder Al2O3. Realisiert man aber einen kompakten Koppler (Kopplerlänge « λ/4) auf solchen kostengünstigen Substraten, so weisen die Koppler einen Frequenzverlauf des Kopplersignals von ca. 6 dB/Frequenzoktave auf.There are also microstrip versions. 1991 IEEE MTT-S International Microwave Symposium Digest, Volume II, 857-860 describes a thin-film coupler that has two strip lines as coupler loops. The two coupler loops are applied to a dielectric substrate with a high dielectric constant K. On the back of the ceramic substrate there is still a metallic layer as the ground plane. In addition, six end contacts are attached to the component, two of which are in contact with a coupler loop and two are connected to the ground plane. The use of a dielectric substrate with a high dielectric constant has the advantage that the component can be realized in a compact size. A major disadvantage, however, is that these substrates are significantly more expensive than, for example, glass or Al 2 O 3 . However, if a compact coupler (coupler length λ / 4) is implemented on such inexpensive substrates, the couplers have a frequency response of the coupler signal of approximately 6 dB / frequency octave.

In der EP 0 298 434 ist ein Dünnschichtkoppler beschrieben, der auf einem dielektrischen Substrat mehrere gekoppelte Streifenleitungen mit eng benachbartem Verlauf zueinander aufweist. Zur Gewährleistung einer Phasendifferenz von 90 ° ist etwa in der Mitte der Koppelstrecke ein ohmscher Widerstand eingefügt.EP 0 298 434 describes a thin-film coupler based on a dielectric Substrate several coupled strip lines with a closely adjacent course having. To ensure a phase difference of 90 ° is approximately in the middle Coupling path inserted an ohmic resistor.

In der EP 0 641 037 ist ein Koppler mit zwei Streifenleitungen beschrieben, wobei die Streifenleitungen derart aufgebracht und verbunden sind, dass sie eine Spule mit einer oder mehr Windungen bilden.EP 0 641 037 describes a coupler with two strip lines, the Strip lines are applied and connected such that they have a coil with one or form more turns.

In der US 4,800,345 ist ein Koppler mit einem planaren, spiralförmigen äußeren Streifenleiter und einem längengleichen, parallel und koplanar verlaufenden inneren Streifenleiter beschrieben.In US 4,800,345 is a coupler with a planar, spiral outer Stripline and an interior of equal length, parallel and coplanar Stripline described.

Aus der US 5,410,179 ist ein Mikrowellenbauelement bekannt, bei dem die elektrischen Eigenschaften des Bauelementes durch Aufbringen einer dielektrischen Schicht auf der Oberfläche des Mikrowellenbauelementes und durch Strukturieren dieser dielektrischen Schicht verändert werden können.From US 5,410,179 a microwave component is known in which the electrical Properties of the component by applying a dielectric layer on the Surface of the microwave component and by structuring this dielectric Layer can be changed.

In der EP 0 522 524 ist ein Koppler beschrieben, der zwei Induktoren in Form von zwei Streifenleitungen zwischen zwei Paaren von Toren und zwei Gruppen von Kondensatoren, die jeweils mit einem Paar der Tore verbunden sind, aufweist. EP 0 522 524 describes a coupler which has two inductors in the form of two Strip lines between two pairs of gates and two groups of capacitors, each connected to a pair of the gates.

Der Erfindung liegt die Aufgabe zugrunde einen preisgünstigen, kompakten Koppler bereitzustellen, der bei mehreren Frequenzen die gleiche Kopplung aufweist.The invention has for its object an inexpensive, compact coupler to provide the same coupling at several frequencies.

Die Aufgabe wird gelöst durch einen Dünnschichtkoppler mit einem Trägersubstrat und zwei darüberliegenden Streifenleitungen, von denen eine die Hauptkopplerschleife und eine die Nebenkopplerschleife ist, bei dem in der Nebenkopplerschleife eine Komponente integriert ist, die eine Phasenverschiebung der Frequenz des ausgekoppelten Signals bewirkt, wobei in der Nebenkopplerschleife als Komponente eine Spule integriert ist.The object is achieved by a thin-film coupler with a carrier substrate and two strip lines above, one of which is the main coupler loop and one is the secondary coupler loop, in which a component is in the secondary coupler loop is integrated, which is a phase shift in the frequency of the coupled signal causes a coil is integrated as a component in the secondary coupler loop.

Üblicherweise zeigen Koppler eine starke Frequenzabhängigkeit der Kopplung. Durch den Einbau einer Spule in die Nebenkopplerschleife wird die Bandbreite der Kopplung größer. Couplers usually show a strong frequency dependence of the coupling. By the Installation of a coil in the secondary coupler loop increases the bandwidth of the coupling.

Eine Spule kann auf einfache Weise in die Nebenkopplerschleife integriert werden, indem sie auch in Streifenleitungsbauart und somit im selben Prozessschritt wie der Rest der Nebenkopplerschleife ausgeführt wird. Eine Spule kann aber auch mit Hilfe anderer Dünnschichttechniken dargestellt und anschließend mit der Nebenkopplerschleife elektrisch kontaktiert werden.A coil can be easily integrated into the secondary coupler loop by they also have a stripline design and thus in the same process step as the rest of the Auxiliary coupler loop is executed. A coil can also be used with the help of others Thin-film techniques are shown and then with the secondary coupler loop be contacted electrically.

In einer besonders bevorzugten Ausführungsform des Dünnschichtkopplers ist in der Nebenkopplerschleife eine Spule und ein seriell oder parallel geschalteter Kondensator integriert.In a particularly preferred embodiment of the thin-film coupler is in the Secondary coupler loop a coil and a series or parallel capacitor integrated.

Der Einbau einer LC-Kombination bewirkt eine besonders starke Verbreiterung der Bandbreite des Kopplers.The installation of an LC combination causes a particularly wide broadening of the bandwidth of the coupler.

Es ist bevorzugt, dass als Material für das Trägersubstrat ein keramisches Material, ein keramisches Material mit einer Planarisierungsschicht aus Glas, ein glaskeramisches Material oder ein Glasmaterial verwendet wird. Ein Trägersubstrat aus diesen Materialien ist kostengünstig herzustellen und die Prozesskosten für diese Komponente können niedrig gehalten werden.It is preferred that a ceramic material, a ceramic material, be used as the material for the carrier substrate Material with a planarization layer made of glass, a glass-ceramic material or a glass material is used. A carrier substrate made of these materials is inexpensive Manufacture and process costs for this component can be kept low become.

Es ist weiterhin bevorzugt, dass jedes Ende einer Kopplerschleife mit einer Stromzuführung in elektrischem Kontakt steht.It is further preferred that each end of a coupler loop has one Power supply is in electrical contact.

An den Stromzuführungen kann jedes Bauelement mit weiteren Bauelementen eines Schaltkreises elektrisch verbunden werden. Je nach Art der Applikation oder Art der Bauteilmontage kann als Stromzuführung ein galvanischer SMD-Endkontakt oder ein Bump-end-Kontakt oder eine Kontaktfläche eingesetzt werden. Durch die Verwendung von SMD-Endkontakten oder Bump-end-Kontakten können diskrete Bauelemente hergestellt werden.On the power supply lines, each component can be combined with other components Circuit are electrically connected. Depending on the type of application or type of Component assembly can be a galvanic SMD end contact or a power supply Bump-end contact or a contact surface can be used. By using it Discrete components can be produced from SMD end contacts or bump-end contacts become.

Es ist außerdem bevorzugt, dass über dem Dünnschichtkoppler wenigstens eine Schutzschicht aus einem anorganischen Material und/oder einem organischen Material aufgebracht ist. It is also preferred that at least one protective layer over the thin film coupler applied from an inorganic material and / or an organic material is.

Durch die Schutzschicht wird das Bauelement vor mechanischer Beanspruchung und Korrosion durch Feuchtigkeit geschützt.The protective layer protects the component from mechanical stress and Corrosion protected by moisture.

Es ist vorteilhaft, dass auf der Unterseite des Trägersubstrats eine metallische Schicht aufgebracht ist.It is advantageous for a metallic layer on the underside of the carrier substrate is applied.

Diese metallische Schicht dient als Erdungsebene.This metallic layer serves as the ground plane.

In dieser vorteilhaften Ausführungsform des Dünnschichtkopplers ist es bevorzugt, dass die metallische Schicht mit wenigstens einer weiteren Stromzuführung verbunden ist.In this advantageous embodiment of the thin-film coupler, it is preferred that the metallic layer is connected to at least one further power supply.

Im folgenden soll die Erfindung anhand von fünf Figuren und zweier Ausführungsbeispiele erläutert werden. Dabei zeigt

Fig. 1:
einen schematischen Aufbau eines Dünnschichtkoppler, bei dem eine phasenverschiebende Komponente in der Nebenkopplerschleife integriert ist,
Fig. 2:
eine Aufsicht auf einen Dünnschichtkoppler, bei dem eine Spule in der Nebenkopplerschleife integriert ist,
Fig. 3:
eine Aufsicht auf einen Dünnschichtkoppler, bei dem eine Spule in der Nebenkopplerschleife integriert ist,
Fig. 4:
die Streuparameter als Funktion der Frequenz für einen Dünnschichtkoppler, bei dem eine Spule in der Nebenkopplerschleife integriert ist und
Fig. 5:
die Streuparameter als Funktion der Frequenz für einen Dünnschichtkoppler, bei dem eine Spule und ein parallel geschalteter Kondensator in der Nebenkopplerschleife integriert sind.
In the following, the invention will be explained with reference to five figures and two exemplary embodiments. It shows
Fig. 1:
1 shows a schematic structure of a thin-film coupler in which a phase-shifting component is integrated in the secondary coupler loop,
Fig. 2:
a top view of a thin-film coupler in which a coil is integrated in the secondary coupler loop,
Fig. 3:
a top view of a thin-film coupler in which a coil is integrated in the secondary coupler loop,
Fig. 4:
the scattering parameters as a function of frequency for a thin-film coupler in which a coil is integrated in the secondary coupler loop and
Fig. 5:
the scattering parameters as a function of frequency for a thin-film coupler in which a coil and a capacitor connected in parallel are integrated in the secondary coupler loop.

Gemäß Fig. 1 weist ein Dünnschichtkoppler ein Trägersubstrat 1 auf, welches beispielsweise ein keramisches Material, ein keramisches Material mit einer Planarisierungsschicht aus Glas, ein glaskeramisches Material oder ein Glasmaterial enthält. Auf dem Trägersubstrat 1 sind eine Hauptkopplerschleife 2 und eine Nebenkopplerschleife 3 aufgebracht. Beide Schleifen können beispielsweise in Streifenleitungsbauart ausgeführt sein und Cu, Al, Ag, Au oder eine Kombination dieser Metalle enthalten. In der Nebenkopplerschleife 3 ist eine, die Frequenz des ausgekoppelten Signals verschiebende, Komponente 4 integriert. Außerdem sind am Dünnschichtkoppler vier Stromzuführungen 5 befestigt, von denen jeweils zwei Stromzuführungen über eine der beiden Kopplerschleife miteinander verbunden sind. Als Stromzuführung 5 kann zum Beispiel ein galvanischer SMD-Endkontakt aus Cr/Cu, Ni/Sn oder Cr/Cu, Cu/Ni/Sn oder Cr/Ni, Pb/Sn oder ein Bump-end-Kontakt oder eine Kontaktfläche eingesetzt werden.1, a thin-film coupler has a carrier substrate 1, which, for example a ceramic material, a ceramic material with a planarization layer made of glass, a glass-ceramic material or a glass material contains. On the carrier substrate 1, a main coupler loop 2 and a secondary coupler loop 3 are applied. Both loops can, for example, be of the stripline type and Cu, Al, Ag, Au or a combination of these metals. In the secondary coupler loop 3 is a component 4 which shifts the frequency of the decoupled signal. In addition, four power leads 5 are attached to the thin-film coupler, each of which two power supplies connected to each other via one of the two coupler loops are. A galvanic SMD end contact, for example, can be used as the power supply 5 Cr / Cu, Ni / Sn or Cr / Cu, Cu / Ni / Sn or Cr / Ni, Pb / Sn or a bump-end contact or a contact surface can be used.

Im einfachsten Fall kann die phasenverschiebende Komponente 4 auch wie die Kopplerschleifen in Streifenleitungsbauart ausgeführt werden und direkt in die Nebenkopplerschleife 3 integriert werden. Die phasenverschiebende Komponente 4 kann beispielsweise auch mittels Dünnschichttechniken hergestellt werden und anschließend mit der Nebenkopplerschleife 3 elektrisch kontaktiert werden.In the simplest case, the phase-shifting component 4 can also loop like the coupler are designed in stripline design and directly into the secondary coupler loop 3 can be integrated. The phase-shifting component 4 can, for example can also be produced using thin-film techniques and then with the secondary coupler loop 3 can be electrically contacted.

In Fig. 2 ist die Nebenkopplerschleife 3 mit einer Windung ausgeführt, so dass sie durch ihre Form auch als Spule fungiert und eine Phasenverschiebung bewirkt.In Fig. 2, the secondary coupler loop 3 is designed with one turn, so that it through their shape also acts as a coil and causes a phase shift.

In Fig. 3 ist die Nebenkopplerschleife 3 mit Windungen ausgeführt, so dass sie durch ihre Form auch als Spule fungiert und eine Phasenverschiebung bewirkt. In Fig. 3, the secondary coupler loop 3 is designed with turns, so that it through their Form also acts as a coil and causes a phase shift.

Über dem gesamten Dünnschichtkoppler kann eine Schutzschicht aus einem organischen und/oder anorganischen Material aufgebracht werden. Als organisches Material kann beispielsweise Polybenzocyclobuten oder Polyimid und als anorganisches Material kann zum Beispiel Si3N4, SiO2 oder SixOyNz (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1) verwendet werden. A protective layer made of an organic and / or inorganic material can be applied over the entire thin-film coupler. For example, polybenzocyclobutene or polyimide can be used as the organic material and Si 3 N 4 , SiO 2 or Si x O y N z (0 x x 1 1, 0 y y 1 1, 0 ≤ z 1 1), for example, can be used as the inorganic material ,

Alternativ kann auf der Rückseite des Trägersubstrats 1 eine metallische Schicht, welche beispielsweise Cu enthält aufgebracht werden. Zusätzlich kann diese metallische Schicht mit wenigstens einer weiteren Stromzuführung verbunden werden.Alternatively, a metallic layer can be on the back of the carrier substrate 1 for example Cu contains to be applied. In addition, this metallic layer be connected to at least one further power supply.

Im folgenden werden Ausführungsformen der Erfindung erläutert, die beispielhafte Realisierungsmöglichkeiten darstellen.In the following, embodiments of the invention are explained, the exemplary implementation options represent.

Ausführungsbeispiel 1Embodiment 1

Auf einem Trägersubstrat 1 aus Al2O3 mit einer Dicke von 0.43 mm wurden eine Hauptkopplerschleife 2 und eine Nebenkopplerschleife 3 aus Cu mit einer Breite von 115 pm aufgebracht. Der Abstand der Hauptkopplerschleife 2 zur Nebenkopplerschleife 3 beträgt 35 µm. Die Länge der Kopplerstrecke zwischen den beiden Kopplerschleifen ist aufgeteilt in zwei 1.45 mm lange Abschnitte, die durch eine Dünnschichtspule mit 5.3 Windungen, bei einem inneren Windungsradius von 50 µm, einem Abstand der Windungen von 20 um und einer Spulenwindungsbreite von 30 µm, verbunden werden. An jedem Ende der beiden Kopplerschleifen ist ein Cr/Cu, Cu/Ni/Sn SMD-Endkontakt als Stromzuführung 5 angebracht. Auf der Unterseite des Trägersubstrats 1 befindet sich eine metallische Schicht aus Cu.A main coupler loop 2 and a secondary coupler loop 3 made of Cu with a width of 115 μm were applied to a carrier substrate 1 made of Al 2 O 3 with a thickness of 0.43 mm. The distance between the main coupler loop 2 and the secondary coupler loop 3 is 35 μm. The length of the coupler path between the two coupler loops is divided into two 1.45 mm long sections, which are connected by a thin-layer coil with 5.3 turns, with an inner turn radius of 50 µm, a distance between the turns of 20 µm and a coil turn width of 30 µm. At each end of the two coupler loops, a Cr / Cu, Cu / Ni / Sn SMD end contact is attached as a power supply 5. There is a metallic layer made of Cu on the underside of the carrier substrate 1.

Die Streuparameter als Funktion der Frequenz für diesen Dünnschichtkoppler sind in Fig. 4 dargestellt. Dabei steht IL für die Durchgangsverluste (insertion loss), C für die Kopplung (coupling) und I für die Isolation.The scattering parameters as a function of frequency for this thin film coupler are in Fig. 4 shown. IL stands for insertion loss, C for Coupling (coupling) and I for isolation.

Ausführungsbeispiel 2Embodiment 2

Auf einem Trägersubstrat 1 aus Al2O3 mit einer Dicke von 0.43 mm wurden eine Hauptkopplerschleife 2 und eine Nebenkopplerschleife 3 aus Cu mit einer Breite von 115 µm aufgebracht. Der Abstand der Hauptkopplerschleife 2 zur Nebenkopplerschleife 3 beträgt 35 µm. Die Länge der Kopplerstrecke zwischen den beiden Kopplerschleifen ist aufgeteilt in zwei 1.45 mm lange Abschnitte, die durch eine Dünnschichtspule aus Cu mit einer Induktivität von 5.4 nH und einen parallel geschalteten Dünnschichtkondensator mit einer Kapazität von 1 pF verbunden wurden. Der Dünnschichtkondensator enthält eine untere und eine obere Elektrode aus Al und ein Dielektrikum aus Si3N4. An jedem Ende der beiden Kopplerschleifen ist ein Cr/Cu, Cu/Ni/Sn SMD-Endkontakt als Stromzuführung 5 angebracht. Auf der Unterseite des Trägersubstrats 1 befindet sich eine metallische Schicht aus Cu.A main coupler loop 2 and a secondary coupler loop 3 made of Cu with a width of 115 μm were applied to a carrier substrate 1 made of Al 2 O 3 with a thickness of 0.43 mm. The distance between the main coupler loop 2 and the secondary coupler loop 3 is 35 μm. The length of the coupler path between the two coupler loops is divided into two 1.45 mm long sections, which were connected by a thin-film coil made of Cu with an inductance of 5.4 nH and a parallel-connected thin-film capacitor with a capacitance of 1 pF. The thin film capacitor contains a lower and an upper electrode made of Al and a dielectric made of Si 3 N 4 . At each end of the two coupler loops, a Cr / Cu, Cu / Ni / Sn SMD end contact is attached as power supply 5. There is a metallic layer made of Cu on the underside of the carrier substrate 1.

Die Streuparameter als Funktion der Frequenz für diesen Dünnschichtkoppler sind in Fig. 5 dargestellt. Dabei steht IL für die Durchgangsverluste (insertion loss), C für die Kopplung (coupling) und I für die Isolation.The scattering parameters as a function of frequency for this thin film coupler are in Fig. 5 shown. IL stands for insertion loss, C for Coupling (coupling) and I for isolation.

Claims (7)

  1. A thin-film coupler with a carrier substrate (1) and two strip lines disposed thereon, of which one is the main coupler loop (2) and the other the auxiliary coupler loop (3), with a component (4) integrated into the auxiliary coupler (3) loop, which component achieves a phase shift of the frequency of the signal coupled out, characterized in that a coil is integrated as said component (4) into the auxiliary coupler loop (3).
  2. A thin-film coupler as claimed in claim 1, characterized in that a coil and a capacitor connected in series or in parallel are integrated as said component (4) into the auxiliary coupler loop (3).
  3. A thin-film coupler as claimed in claim 1, characterized in that the material used for the carrier substrate (1) is a ceramic material, a ceramic material with a planarizing layer of glass, a glass-ceramic material, or a glass material.
  4. A thin-film coupler as claimed in claim 1, characterized in that each end of a coupler loop is electrically connected to a current supply contact (5).
  5. A thin-film coupler as claimed in claim 1, characterized in that at least one protective layer of an inorganic material and/or an organic material is provided over the thin-film coupler.
  6. A thin-film coupler as claimed in claim 1, characterized in that a metal layer is provided on the lower side of the carrier substrate (1).
  7. A thin-film coupler as claimed in claim 6, characterized in that the metal layer is connected to at least one further current supply contact.
EP00201151A 1999-04-03 2000-03-28 Thin film wide band coupler Expired - Lifetime EP1047150B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19915246 1999-04-03
DE19915246A DE19915246A1 (en) 1999-04-03 1999-04-03 Thin film broadband coupler e.g. for mobile telephone, has carrier substrate and two strip lines

Publications (2)

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EP1047150A1 EP1047150A1 (en) 2000-10-25
EP1047150B1 true EP1047150B1 (en) 2002-09-04

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EP00201151A Expired - Lifetime EP1047150B1 (en) 1999-04-03 2000-03-28 Thin film wide band coupler

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EP (1) EP1047150B1 (en)
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE50304801D1 (en) * 2003-03-25 2006-10-05 Audioton Kabelwerk Scheinfeld ANTENNA COUPLER AND MOUNT FOR MOBILE WIRELESS DEVICES
JP4533243B2 (en) * 2005-05-27 2010-09-01 双信電機株式会社 Directional coupler
DE102005054348B3 (en) * 2005-11-15 2007-03-15 Atmel Duisburg Gmbh Coupling element for electromagnetically coupling two conductors of a transmission line comprises sides each formed as a transmission line section assigned to a conductor
JP4782562B2 (en) * 2005-12-28 2011-09-28 東京計器株式会社 Directional coupler, antenna matcher and transmitter
DE102007029127A1 (en) * 2007-06-25 2009-01-02 Rohde & Schwarz Gmbh & Co. Kg Directional coupler with inductively compensated directivity
JP5246301B2 (en) * 2011-06-14 2013-07-24 株式会社村田製作所 Directional coupler
JP5786902B2 (en) 2013-06-26 2015-09-30 株式会社村田製作所 Directional coupler
JP5979402B2 (en) * 2015-07-17 2016-08-24 Tdk株式会社 Directional coupler and wireless communication device
JP7425084B2 (en) 2019-03-13 2024-01-30 キョーセラ・エイブイエックス・コンポーネンツ・コーポレーション Compact thin film surface mountable coupler with broadband performance

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4648087A (en) * 1984-06-28 1987-03-03 International Business Machines Corporation Capacitive sensing employing thin film inductors
EP0298434A3 (en) * 1987-07-08 1990-05-02 Siemens Aktiengesellschaft Thin-film quadrature coupler
US4800345A (en) * 1988-02-09 1989-01-24 Pacific Monolithics Spiral hybrid coupler
US4999593A (en) * 1989-06-02 1991-03-12 Motorola, Inc. Capacitively compensated microstrip directional coupler
US5410179A (en) * 1990-04-05 1995-04-25 Martin Marietta Corporation Microwave component having tailored operating characteristics and method of tailoring
IT1251221B (en) * 1991-07-11 1995-05-04 Sits Soc It Telecom Siemens HYBRID AND MICROWAVE DIRECTIONAL COUPLER WITH CONCENTRATED CONSTANTS WITH SQUARE OUTPUTS.
US5400002A (en) * 1992-06-12 1995-03-21 Matsushita Electric Industrial Co., Ltd. Strip dual mode filter in which a resonance width of a microwave is adjusted and dual mode multistage filter in which the strip dual mode filters are arranged in series
JP2656000B2 (en) * 1993-08-31 1997-09-24 日立金属株式会社 Stripline type high frequency components
US5432487A (en) * 1994-03-28 1995-07-11 Motorola, Inc. MMIC differential phase shifter
JP3125691B2 (en) * 1995-11-16 2001-01-22 株式会社村田製作所 Coupled line element

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JP2000315903A (en) 2000-11-14
EP1047150A1 (en) 2000-10-25
DE50000436D1 (en) 2002-10-10
JP4264182B2 (en) 2009-05-13
US6600386B1 (en) 2003-07-29
DE19915246A1 (en) 2000-10-05

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