EP1047128A3 - Warped semiconductor device and method of manufacturing the same - Google Patents

Warped semiconductor device and method of manufacturing the same Download PDF

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Publication number
EP1047128A3
EP1047128A3 EP00303379A EP00303379A EP1047128A3 EP 1047128 A3 EP1047128 A3 EP 1047128A3 EP 00303379 A EP00303379 A EP 00303379A EP 00303379 A EP00303379 A EP 00303379A EP 1047128 A3 EP1047128 A3 EP 1047128A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor element
element chip
semiconductor device
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00303379A
Other languages
German (de)
French (fr)
Other versions
EP1047128A2 (en
EP1047128B1 (en
Inventor
Eiji Yanagawa
Akihiko Nakano
Toshinori Ohmi
Tadao Takeda
Hideyuki Unno
Hiroshi Ban
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Sharp Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Sharp Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of EP1047128A2 publication Critical patent/EP1047128A2/en
Publication of EP1047128A3 publication Critical patent/EP1047128A3/en
Application granted granted Critical
Publication of EP1047128B1 publication Critical patent/EP1047128B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/57Protection from inspection, reverse engineering or tampering
    • H01L23/573Protection from inspection, reverse engineering or tampering using passive means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
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    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205Shape
    • H01L2224/32057Shape in side view
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    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/45001Core members of the connector
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
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    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Pressure Sensors (AREA)
  • Die Bonding (AREA)

Abstract

A semiconductor device in accordance with the present invention includes a semiconductor element chip pressed and secured on a distortion die-pad so that the semiconductor element chip, sealed inside a package, is held in a predetermined distorted state. The predetermined distorted state is preferably downward or upward warping. The semiconductor element chip operates normally in the distorted state, and does not operate normally when the semiconductor element chip is separated from the semiconductor device, and thereby released from the distortion and laid alone. This ensures that the semiconductor element chip is protected from circuit analysis.
EP00303379A 1999-04-23 2000-04-20 Warped semiconductor device and method of manufacturing the same Expired - Lifetime EP1047128B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11710899A JP3515012B2 (en) 1999-04-23 1999-04-23 Semiconductor device and manufacturing method thereof
JP11710899 1999-04-23

Publications (3)

Publication Number Publication Date
EP1047128A2 EP1047128A2 (en) 2000-10-25
EP1047128A3 true EP1047128A3 (en) 2001-05-16
EP1047128B1 EP1047128B1 (en) 2006-11-22

Family

ID=14703618

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00303379A Expired - Lifetime EP1047128B1 (en) 1999-04-23 2000-04-20 Warped semiconductor device and method of manufacturing the same

Country Status (5)

Country Link
US (1) US6472730B1 (en)
EP (1) EP1047128B1 (en)
JP (1) JP3515012B2 (en)
KR (1) KR100366932B1 (en)
DE (1) DE60031908T2 (en)

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Publication number Priority date Publication date Assignee Title
DE10106836B4 (en) 2001-02-14 2009-01-22 Infineon Technologies Ag Integrated circuit arrangement of a flat substrate
US20060072302A1 (en) * 2004-10-01 2006-04-06 Chien Tseng L Electro-luminescent (EL) illuminated wall plate device with push-tighten frame means
DE102004007690B3 (en) * 2004-02-16 2005-10-13 Infineon Technologies Ag Integrated circuit arrangement
DE102004021633B4 (en) * 2004-05-03 2006-04-06 Infineon Technologies Ag Method for connecting a semiconductor chip to a chip carrier and arrangement with a semiconductor chip and a chip carrier
US11277010B2 (en) 2004-10-01 2022-03-15 Tseng-Lu Chien LED night light with edge-lit light guide
US9235747B2 (en) * 2008-11-27 2016-01-12 Apple Inc. Integrated leadframe and bezel structure and device formed from same
CN116779496B (en) * 2023-08-21 2023-12-26 成都汉芯国科集成技术有限公司 3D packaging system and packaging method suitable for heterogeneous integrated multiple chips

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPS63237144A (en) * 1987-03-25 1988-10-03 Sega Enterp:Kk Semiconductor device with imitation preventing function
EP0509567A2 (en) * 1991-03-28 1992-10-21 Koninklijke Philips Electronics N.V. Device with protection against access to secure information
EP0510434A2 (en) * 1991-04-26 1992-10-28 Hughes Aircraft Company Apparatus and method for inhibiting analysis of a secure circuit
WO1997036326A1 (en) * 1996-03-28 1997-10-02 Symbios,Inc. Integrated circuit protection device and method
EP0860882A2 (en) * 1997-02-24 1998-08-26 General Instrument Corporation Anti-tamper bond wire shield for an integrated circuit

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JPS60747A (en) * 1983-06-17 1985-01-05 Hitachi Ltd Resin molded ic package
SE8605266L (en) * 1986-12-09 1988-06-10 Ragnar Jonsson SWITCH CONNECTION
JPS6415957A (en) 1987-07-10 1989-01-19 Hitachi Ltd Package
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5319151A (en) * 1988-12-29 1994-06-07 Casio Computer Co., Ltd. Data processing apparatus outputting waveform data in a certain interval
JPH05211262A (en) 1992-01-08 1993-08-20 Nec Corp Resin sealed semiconductor device
DE4337461A1 (en) * 1993-11-03 1995-05-04 Braun Ag Switching power supply
JPH0951058A (en) * 1995-08-07 1997-02-18 Mitsubishi Electric Corp Semiconductor device, and method and apparatus for manufacturing semiconductor device
JPH1056180A (en) * 1995-09-29 1998-02-24 Canon Inc Manufacture of semiconductor device
JPH11345823A (en) * 1998-05-29 1999-12-14 Sony Corp Method of mounting flip chip of semiconductor chip, and mounting jig thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237144A (en) * 1987-03-25 1988-10-03 Sega Enterp:Kk Semiconductor device with imitation preventing function
EP0509567A2 (en) * 1991-03-28 1992-10-21 Koninklijke Philips Electronics N.V. Device with protection against access to secure information
EP0510434A2 (en) * 1991-04-26 1992-10-28 Hughes Aircraft Company Apparatus and method for inhibiting analysis of a secure circuit
WO1997036326A1 (en) * 1996-03-28 1997-10-02 Symbios,Inc. Integrated circuit protection device and method
EP0860882A2 (en) * 1997-02-24 1998-08-26 General Instrument Corporation Anti-tamper bond wire shield for an integrated circuit

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 040 (P - 820) 30 January 1989 (1989-01-30) *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 195 (E - 754) 10 May 1989 (1989-05-10) *

Also Published As

Publication number Publication date
DE60031908T2 (en) 2007-09-20
EP1047128A2 (en) 2000-10-25
DE60031908D1 (en) 2007-01-04
EP1047128B1 (en) 2006-11-22
KR100366932B1 (en) 2003-01-09
KR20010014803A (en) 2001-02-26
US6472730B1 (en) 2002-10-29
JP2000307050A (en) 2000-11-02
JP3515012B2 (en) 2004-04-05

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