EP0993066A1 - Mikrowellenkoppler für monolitisch integrierten Schaltkreis - Google Patents

Mikrowellenkoppler für monolitisch integrierten Schaltkreis Download PDF

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Publication number
EP0993066A1
EP0993066A1 EP99402421A EP99402421A EP0993066A1 EP 0993066 A1 EP0993066 A1 EP 0993066A1 EP 99402421 A EP99402421 A EP 99402421A EP 99402421 A EP99402421 A EP 99402421A EP 0993066 A1 EP0993066 A1 EP 0993066A1
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EP
European Patent Office
Prior art keywords
coplanar
coupler
cps
input
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99402421A
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English (en)
French (fr)
Other versions
EP0993066B1 (de
Inventor
Didier Prieto
Eric Rogeaux
Jean-François VILLEMAZET
Thierry Parra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Alcatel Lucent SAS
Original Assignee
Alcatel CIT SA
Alcatel SA
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Publication of EP0993066A1 publication Critical patent/EP0993066A1/de
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Publication of EP0993066B1 publication Critical patent/EP0993066B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices

Definitions

  • the invention relates to a coplanar microwave coupler and more particularly an active and balanced coplanar microwave coupler, intended for be incorporated into a monolithic integrated circuit, called MMIC (Monolithic microwave integrated circuit).
  • MMIC Monolithic microwave integrated circuit
  • Active microwave couplers of the combiner or divider type, incorporated in monolithic integrated circuits made in MMIC technology had the disadvantage of being relatively bulky and delicate integration.
  • LUFET Line-Unified Field-Effect Transistors
  • Such couplers are notably described in the document entitled “Divider and Combiner Line-Unified FET's as basic circuit function modules "published in September 1990 by T. TOKUMITSU & al, in pages 1210-1226 from volume 38, n ° 9 of IEEE MTT.
  • Unified access for transistors makes it possible to take advantage of the slots formed by the metal strips constituting the electrodes of these transistors. It is thus possible to reduce the dimensions and the complexity of producing a coupler. This also increases the frequency bandwidth of circuits integrated monoliths thus produced. However the electrical performances obtained, particularly in terms of integration gain, remain limited. In addition, it is not always possible to directly integrate such a coupler in a balanced circuit more complete and, for example, as a 180 ° combiner in a balanced mixer, because such a combiner requires floating input and output access referenced to the mass, which the envisaged coupler does not allow.
  • the invention therefore provides a coplanar microwave coupler, active and balanced for monolithic integrated circuit MMIC, comprising FET transistors with metal gate, source and drain electrodes integrated into planar metallic elements combined to form the entrance and outlet of the coupler, characterized in that all of these accesses consist of an association comprising one or more CPS coplanar ribbon lines and one or more CPW coplanar waveguides, and that the number of input ports is different from the number of exit ports.
  • the coupler comprises a common floating central electrode obtained by the use of ribbon lines CPS coplanar in the access set.
  • the coupler comprises two input accesses which are composed by two coplanar waveguides acting each on a half of the coupler transistors under the action of signals excited in phase opposition and an exit access which is composed by a ribbon line CPS coplanar connected to a T-junction at which the signals intermediates from the transistors are recombined in phase.
  • the coupler of the divider type, has a floating input obtained by adding a CPS / CPW transition.
  • the coupler of the combiner type, has a floating entrance obtained by adding a ribbon line CPS coplanar upstream of a CPS / CPW transition of the coupler input.
  • the coupler comprises a number of transistors attacked via an input access which is equal to two or one multiple of two, all transistors comprising either one or alternately two grid fingers, which improves electrical performance in concerns the power gain.
  • the invention relates to monolithic integrated circuits comprising a coupler having at least one of the characteristics mentioned above.
  • the invention, its characteristics and advantages are specified in the description which follows in link with the figures mentioned below.
  • Figure 1 shows a representative diagram of mask elements main for a combiner according to the invention.
  • Figure 2 shows a representative diagram of mask elements main for a divider according to the invention.
  • Figure 3 shows a representative diagram of mask elements main for a variant of a combiner according to the invention.
  • FIG. 4 shows a diagram representing the main mask elements for a combiner, according to FIG. 3, provided with output access lines of a mixer.
  • the invention relates to a microwave coupler, active, balanced and of the coplanar type, more particularly intended to be incorporated in a monolithic integrated circuit MMIC.
  • a known example of such a circuit relating to a LUFET combiner with a common grid is illustrated in FIG. 5a of the document cited above. This circuit will not be detailed here insofar as it is not the subject of the invention.
  • the active and balanced coupler, of the LUFET type, according to the invention comprises access lines of the coplanar ribbon type CPS (Coplanar strips) associated with coplanar waveguides CPW (Coplanar Waveguides) more particularly in the context of 'an MMIC circuit.
  • CPS Coplanar strips
  • CPW Coplanar Waveguides
  • a CPS line comprises two metal strips of fixed width W which are separated by a fixed width S slot and it works practically according to a propagation mode exploiting the properties of waves electromagnetic transverse TEM, unlike a conventional slotted line which operates according to a propagation mode exploiting the properties of waves transverse electrical TE.
  • a compromise is made regarding the width W which must be greater for the line losses to be minimal and which must also be low enough to eliminate the risk of phenomena non-TEM interference and to limit as much as possible the areas at the circuit integrated monolithic MMIC. This is particularly developed in the document entitled "CPS structure potentialities for MMICS: a CPS / CPW transition and a bias network" published in 1998 by D. PRIETO & al, in pages 111 to 114 of IEEE MIT-S Digest.
  • the width Wm of the CPW ground planes can be reduced to a value less than half the distance between ground planes without the propagation characteristics are not adversely affected.
  • the balanced active coupler 1 shown diagrammatically in FIG. 1, can for example be produced on a surface of 330 ⁇ 240 ⁇ m 2 .
  • This coupler is a 180 ° power combiner, it includes FET transistors. Only the metal bands for access to the gate G, drain D and source S electrodes are shown, these bands being usually located above the transistors to which they are assigned in the structure constituting the MMIC circuit.
  • the coupler comprises four FET transistors with a gate finger 2 or two FET transistors with two gate fingers 2. These transistors are here arranged symmetrically with respect to a median longitudinal axis XX of the diagrammatic mask.
  • Each gate finger 2 is positioned between the drain and source electrodes integrated into the metal strip elements, here referenced 3, 3 ′ for the drains and 4, 4 'or 4 "for the sources.
  • the multiplication of the number of FET transistors allows to obtain a power gain as illustrated in FIG. 4.
  • Coupler 1 Two input ports are provided at coupler 1, each constituting a coplanar CPW waveguide for connection to two of the FET transistors.
  • One of these accesses are composed from 4 and 4 "source elements and a grid 5, the other is composed from source elements 4 and 4 'and an element from grid 5.
  • the source element 4 is common to the two guides.
  • the combiner that constitutes coupler 1 simultaneously receives two input signals excited in phase opposition by the two waveguides coplanar whose entries are referenced "-Sin” and "+ Sin” in Figure 1.
  • the isolation between these inputs is provided here by the active parts of the FET transistors.
  • Intermediate output signals are respectively obtained between the elements forming source and drain electrodes for FET transistors.
  • a line of ribbons coplanar outlet is formed by the two metal strips accessing the drain electrodes. Intermediate signals recombine in phase across a CPS T-junction.
  • the line of coplanar ribbons at the outlet of this junction allows reduction of the dispersive nature of the circuit produced. It transmits the signal obtained after recombination at the Sout output of the combiner and it is here referenced to the mass.
  • a schematic expression of the electric field between bands is given by the arrows placed on figure 1.
  • a gain greater than + 1 dB in transmission and greater than -20 dB in reverse transmission are obtained between a input signal and output signal, as well as insulation below -10 dB between the two input signals in a wide frequency range extending to the 20 GHz.
  • a power gain of the order of +10 dB is obtained for a 11 GHz frequency, when the input ports are simultaneously excited by two signals in phase opposition.
  • An additional 5 "metal strip element is added to the elements strip which extend the elements 5 and 5 'at the input of the coupler to constitute the second element to ground of the input CPW coplanar waveguide which is then fitted the coupler.
  • the two elements 5 ′ and 5 are then connected by an air bridge 6, the two source elements 4 ′, 4 "being also connected to source element 4 by 6 'air bridge.
  • FIG. 3 The application of a coupler according to the invention to a power combiner at 180 ° positioned at the outlet of a balanced mixer is shown in Figure 3.
  • the coupler presented on figure 2 is then supplemented by a coplanar waveguide CPW outlet and it is attacked by the mixer, not shown, through a CPS coplanar strip line obtained by extending elements 5 and 5 '.
  • a additional metal strip element 3 " is added to elements 3 and 3 'in output of the coupler to constitute the second element to the ground of the waveguide coplanar output CPW with which the coupler is then fitted.
  • the two elements 3 and 3 " are then connected by an air bridge 6 ", while the two source elements 4 ', 4" also being connected to the source element 4 by air bridges 6 '.
  • the combiner of power obtained which has an output CPW coplanar waveguide at the mass is thus provided with two floating differential inputs.
  • the variant embodiment shown in FIG. 4 relates to a higher power combiner which is obtained by duplication from that presented in Figure 1 and which improves electrical performance in terms of concerns the gain and linearity of the power characteristic.
  • the coupler comprises eight FET transistors with a gate finger 12 or 12 'or four FET transistors with two gate fingers. These transistors are arranged here symmetrically with respect to the median longitudinal axis XX of the schematic mask. Each grid finger 12 is positioned between two metal strip elements, one of drain 13 or 13 'and the other of source 14, 14' or 14 ". The multiplication of number of FET transistors provides power gain as already indicated.
  • Two entry ports are provided at the coupler, each constituting a coplanar CPW waveguide for connection to four FET transistors.
  • One is composed from source elements 14 and 14 "and a grid element 15 and the other from the source elements 14 and 14 'and a grid element 15'.
  • the source element 14 is common to the two guides.
  • the two source elements 14 "and 14 ' are connected to the source element 14 by air bridges 16.
  • Each of the CPW coplanar waveguides forming the input ports of the coupler is separated into two lines with internal coplanar bands.
  • a CPS / CPW T-junction is made in the coupler at each access between the waveguides and the coplanar ribbon lines of access to FET transistors to allow transmission to these transistors of the signal received via the access considered.
  • These transistors are either two of the four two-finger transistors of the gate of the coupler, i.e. four of the eight transistors to a gate finger, according to the chosen option.
  • intermediate output signals are respectively obtained between the elements relating to the source and source electrodes drain of FET transistors.
  • the intermediate signals respectively obtained for each access are transmitted via CPW coplanar waveguides and via a CPW / CPS transition per access. These intermediate signals recombine in phase at the CPS T-junction.
  • the output signal Sout is obtained from the line with coplanar tapes leaving the junction.
  • this combiner corresponds to that of the combiner described in relation to Figure 1.
  • Two input signals "-Sin”, “+ Sin” in opposition to phase are simultaneously applied each at one of the two sets grids.
  • Gain and saturation power output values of respectively 6.8 dB and 11.5 dBm at 11 GHz are likely to be obtained instead of 3.5 dB and 5.9 dBm for the combiner presented in figure 1.

Landscapes

  • Microwave Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)
EP99402421A 1998-10-05 1999-10-04 Mikrowellenkoppler für monolitisch integrierten Schaltkreis Expired - Lifetime EP0993066B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9812433A FR2784234A1 (fr) 1998-10-05 1998-10-05 Coupleur hyperfrequence pour circuit integre monolithique
FR9812433 1998-10-05

Publications (2)

Publication Number Publication Date
EP0993066A1 true EP0993066A1 (de) 2000-04-12
EP0993066B1 EP0993066B1 (de) 2003-05-07

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EP99402421A Expired - Lifetime EP0993066B1 (de) 1998-10-05 1999-10-04 Mikrowellenkoppler für monolitisch integrierten Schaltkreis

Country Status (6)

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US (1) US6331807B1 (de)
EP (1) EP0993066B1 (de)
JP (1) JP2000299620A (de)
AT (1) ATE239983T1 (de)
DE (1) DE69907595T2 (de)
FR (1) FR2784234A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6670865B2 (en) 2001-06-06 2003-12-30 Noel A. Lopez Method and apparatus for low loss high frequency transmission
JP2003257988A (ja) * 2002-03-05 2003-09-12 Sharp Corp トランジスタ回路および通信装置
WO2007034658A1 (ja) * 2005-09-26 2007-03-29 Nec Corporation バラン回路及び集積回路装置
US8339790B2 (en) 2010-09-10 2012-12-25 Raytheon Company Monolithic microwave integrated circuit
CN111146549B (zh) * 2020-01-14 2021-04-20 电子科技大学 基于耦合结构的接地共面波导功率分配/合成网络
CN115333504B (zh) * 2022-10-12 2022-12-27 电子科技大学 一种集成通道切换的功分网络单片微波集成电路

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3848198A (en) * 1972-12-14 1974-11-12 Rca Corp Microwave transmission line and devices using multiple coplanar conductors
US5387547A (en) * 1991-11-15 1995-02-07 Motorola, Inc. Process for adjusting the impedance of a microwave conductor using an air bridge
US5550518A (en) * 1995-06-12 1996-08-27 Endgate Corporation Miniature active conversion between microstrip and coplanar wave guide
WO1997017738A1 (en) * 1995-11-08 1997-05-15 Endgate Corporation Slotline-to-coplanar waveguide transition
WO1998013894A1 (en) * 1996-09-25 1998-04-02 Endgate Corporation Miniature active conversion between slotline and coplanar waveguide
EP0880194A1 (de) * 1997-05-21 1998-11-25 Ulrich D. Dr. Keil Streifenleitungsübertragungsvorrichtung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105171A (en) * 1991-04-29 1992-04-14 Hughes Aircraft Company Coplanar waveguide directional coupler and flip-clip microwave monolithic integrated circuit assembly incorporating the coupler
US5698469A (en) * 1994-09-26 1997-12-16 Endgate Corporation Method of making a hybrid circuit with a chip having active devices with extra-chip interconnections

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3848198A (en) * 1972-12-14 1974-11-12 Rca Corp Microwave transmission line and devices using multiple coplanar conductors
US5387547A (en) * 1991-11-15 1995-02-07 Motorola, Inc. Process for adjusting the impedance of a microwave conductor using an air bridge
US5550518A (en) * 1995-06-12 1996-08-27 Endgate Corporation Miniature active conversion between microstrip and coplanar wave guide
WO1997017738A1 (en) * 1995-11-08 1997-05-15 Endgate Corporation Slotline-to-coplanar waveguide transition
WO1998013894A1 (en) * 1996-09-25 1998-04-02 Endgate Corporation Miniature active conversion between slotline and coplanar waveguide
EP0880194A1 (de) * 1997-05-21 1998-11-25 Ulrich D. Dr. Keil Streifenleitungsübertragungsvorrichtung

Also Published As

Publication number Publication date
ATE239983T1 (de) 2003-05-15
EP0993066B1 (de) 2003-05-07
DE69907595D1 (de) 2003-06-12
DE69907595T2 (de) 2004-03-11
JP2000299620A (ja) 2000-10-24
US6331807B1 (en) 2001-12-18
FR2784234A1 (fr) 2000-04-07

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