EP0983395A1 - Epitaxy boat and method for liquid phase epitaxial deposit of cdhgte - Google Patents

Epitaxy boat and method for liquid phase epitaxial deposit of cdhgte

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Publication number
EP0983395A1
EP0983395A1 EP98925759A EP98925759A EP0983395A1 EP 0983395 A1 EP0983395 A1 EP 0983395A1 EP 98925759 A EP98925759 A EP 98925759A EP 98925759 A EP98925759 A EP 98925759A EP 0983395 A1 EP0983395 A1 EP 0983395A1
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EP
European Patent Office
Prior art keywords
epitaxy
heterosubstrate
solution
well
drawer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98925759A
Other languages
German (de)
French (fr)
Inventor
Bernard Pelliciari
Bernard Polge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP0983395A1 publication Critical patent/EP0983395A1/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Definitions

  • the invention relates to an epitaxy basket intended for the deposition of a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate. It also relates to a method of depositing a layer of CdHgTe on a heterosubstrate using this nacelle
  • This invention finds applications in the production of infrared radiation detectors.
  • Patent application FR-A-2 736 210 proposes replacing a homosubstrate of this type with a more mechanically robust substrate.
  • this document describes a heterosubstrate comprising a basic Ge or Si substrate and an active layer of CdHgTe in which the components are made.
  • the CdHgTe layer is deposited by liquid phase epitaxy on the base substrate, through one or more transition layers made of binary, ternary or quaternary II - VI material.
  • the epitaxy solution when the epitaxy solution is brought into contact with the heterosubstrate covered with its adaptation layer in CdTe, a dissolution of the heterosubstrate (CdTe / Ge) appears on the input edge of the substrate. .
  • the substrate is generally insufficiently covered with CdTe and the epitaxy solution can infiltrate along the edge of the substrate; the latter can then dissolve; however, the solubility of germanium in the tellurium solvent is such that in a few minutes, several hundred milligrams of germanium pass into the solution, which starts the substrate and gives it a "nibbled" appearance.
  • the tellurium solution is then contaminated with germanium atoms; the latter also contaminate the layer of CdHgTe in the course of growth, which modifies the electrical properties of the CdHgTe material and causes malfunctions of the detectors thus produced.
  • the object of the invention is precisely to remedy the drawbacks of the technique of growth by epitaxy in the liquid phase on a heterosubstrate, described above.
  • This nacelle has two horizontal drawers which are moved relative to each other so as to bring the tellurium solution above a chosen area of the heterosubstrate, avoiding that the entry edge of the heterosubstrate is not in contact with the tellurium solution.
  • the invention relates to an epitaxy basket for depositing a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate, comprising a first drawer horizontal on which the heterosubstrate to be covered is placed.
  • This nacelle is characterized by the fact that it also includes: - a tank capable of containing an epitaxy solution; a well intended to receive this epitaxy solution at the time of the epitaxy of the layer of CdHgTe and having lateral dimensions smaller than those of the heterosubstrate and a space
  • the invention also relates to a method of depositing a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate, using the nacelle described above.
  • This process is characterized by the fact that it consists: during a pre-epitaxy phase, of introducing an epitaxy solution into the reservoir and of positioning the heterosubstrate on the first drawer; at the start of an epitaxy phase, to move the first drawer to bring the heterosubstrate under the well, then to move the second drawer so as to bring the orifice of this second drawer under the tank and above the well so that the solution flows from the reservoir to the well; - at the end of the epitaxy phase, move the first drawer to separate the heterosubstrate from the epitaxy solution.
  • the epitaxy solution can be of the low surface tension type and the heterosubstrate can be of the non-inert type.
  • the heterosubstrate used in this process is faceted by a triangular pattern which increases the confinement of the solution on the heterosubstrate.
  • FIG. 1 represents the epitaxy nacelle of the invention during the pre-epitaxy phase
  • FIG. 2 shows this epitaxy pod at the start of the epitaxy phase
  • FIG. 3 represents the epitaxy nacelle during the epitaxy phase
  • FIG. 4 represents the epitaxy nacelle in the post-epitaxy phase.
  • FIG. 1 shows the epitaxy nacelle according to the invention.
  • This nacelle 1 comprises a first horizontal drawer 2 on which is placed the heterosubstrate 3 intended to be epitaxy. It further comprises a second horizontal drawer 4 located above the first drawer 2. Between the two drawers, the nacelle includes a well 6 intended to receive a solution ensuring the epitaxy of the heterosubstrate. This solution called
  • epi solution is, for example, a tellurium solvent containing Cd and Hg.
  • the lateral dimensions of the well are chosen so as to be smaller than those of the heterosubstrate; one can thus avoid the contact of the epitaxy solution with the edges of the heterosubstrate, and perfectly delimit the zone of the heterosubstrate to be epitaxied.
  • the nacelle 1 further comprises a reservoir 5 into which the epitaxy solution is loaded during the pre-epitaxial phase.
  • This reservoir 5 is placed vertically from the well 6; the well 6 and the reservoir 5 are separated from each other by the second drawer 4.
  • An orifice 7 made in the second drawer 4 ensures the passage of the epitaxy solution from the reservoir 5 towards the well 6 at the start of the epitaxial phase, when the second drawer is positioned so that its orifice 7 is located between the well and the reservoir.
  • the space 6b between the surface of the heterosubstrate and the lower edges of the walls 6a of the well 6 is less than or equal to 50 ⁇ m; this makes it possible to increase the confinement of the solution in the well and to limit the risks of infiltration of the solution by capillarity towards the edges of the heterosubstrate. Such a well 6 therefore makes it possible to avoid any contacting of the edges of the heterosubstrate with the epitaxy solution.
  • the faceted pattern on the layer of CdTe (or CdZnTe), characteristic of growth by MOCVD (vapor phase growth from organometallics) on the plane of the base substrate is triangular because the growth of CdTe
  • Such an epitaxy basket has the further advantage of allowing epitaxy on heterosubstrates which are non-inert with respect to the epitaxy solution, for example heterosubstrates in Germanium or in Silicon.
  • FIG. 1 shows the epitaxy nacelle of the invention in the pre-epitaxial phase. During this pre-epitaxy phase, the heterosubstrate to be treated is placed on the first drawer 2 and placed in the standby position; the epitaxy solution is introduced into the reservoir 5.
  • Figure 2 shows this epitaxy basket at the start of the epitaxy phase. At this time, the drawer 2 is pushed so as to bring the heterosubstrate to be treated under the well 6 which, at this instant, is empty.
  • FIG. 3 shows the step where the epitaxy solution is brought into the well, after the second drawer 4 has been moved so that its orifice 7 is aligned with the reservoir 5 and the well 6.
  • the solution d epitaxy then passes into well 6 and epitaxy on heterosubstrate 3 can be performed.
  • FIG. 4 shows the epitaxy nacelle 1 in the post-epitaxial phase, that is to say when the heterosubstrate has been epitaxied and it is separated from the epitaxy solution by moving the first drawer 2
  • the heterosubstrate epitaxy is referenced 3 'in this figure 4.
  • the clearance between the surface of the heterosubstrate and the lower edges of the walls of the well is minimized, which makes it possible, in addition to confining the solution in the well, to limit the risk that a drop of solution remains randomly attached to the surface of the CdHgTe layer when the heterosubstrate is separated from the epitaxy solution.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

The invention concerns an epitaxy boat for the liquid phase epitaxial deposit of a CdHgTe layer on a heterosubstrate without any risk of dissolving the heterosubstrate in the epitaxy solution. Said boat comprises two horizontal slides mutually offset such that the tellurium solution is brought above a selected zone of the heterosubstrate. The invention also concerns a method for depositing a CdHgTe layer on a heterosubstrate using said boat. The invention is applicable to the production of infrared radiation detectors.

Description

NACELLE D'EPITAXIE ET PROCEDE POUR DEPOT D'UNE COUCHE DE CdHgTe PAR EPITAXIE EN PHASE LIQUIDEEPITAXY PLATFORM AND METHOD FOR DEPOSITING A COEd COAT LAYER BY LIQUID EPITAXY
DESCRIPTIONDESCRIPTION
Domaine de 1 ' inventionField of the invention
10 L'invention concerne une nacelle d'épitaxie destinée au dépôt d'une couche de CdHgTe par épitaxie en phase liquide sur un hétérosubstrat. Elle concerne également un procédé de dépôt d'une couche de CdHgTe sur un hétérosubstrat utilisant cette nacelleThe invention relates to an epitaxy basket intended for the deposition of a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate. It also relates to a method of depositing a layer of CdHgTe on a heterosubstrate using this nacelle
15 d'épitaxie.15 epitaxy.
Cette invention trouve des applications dans la réalisation de détecteurs de rayonnements infrarouges.This invention finds applications in the production of infrared radiation detectors.
20 Etat de la technique20 State of the art
Actuellement, la demande en détecteurs de rayonnements infrarouges est de plus en plus grande, en particulier pour des détecteurs de grandes tailles.Currently, the demand for infrared radiation detectors is growing, in particular for large detectors.
25 Pour réaliser de tels détecteurs, on utilise généralement des homosubstrats en CdTe ou CdZnTe. Or, la réalisation de détecteurs de dimensions importantes nécessite des substrats d'épitaxie de plus en plus grands. Mais, il est difficile d'élaborer desTo make such detectors, homosubstrates are generally used in CdTe or CdZnTe. However, the production of detectors of large dimensions requires increasingly large epitaxy substrates. However, it is difficult to develop
30 homosubstrats en CdTe ou CdZnTe de grandes dimensions et, de toutes façons, de tels homosubstrats sont très fragiles, ce qui rend les composants de grandes dimensions très fragiles, en particulier au cours des cycles thermiques puisqu'ils fonctionnent à des températures basses de l'ordre de 77 à 200 kelvin.30 homosubstrates in CdTe or CdZnTe of large dimensions and, in any case, such homosubstrates are very fragile, which makes the components of large very fragile dimensions, in particular during thermal cycles since they operate at low temperatures of the order of 77 to 200 kelvin.
La demande de brevet FR-A-2 736 210 propose de remplacer un homosubstrat de ce type par un substrat plus robuste mécaniquement. En particulier, ce document décrit un hétérosubstrat comportant un substrat de base en Ge ou Si et une couche active de CdHgTe dans laquelle sont réalisés les composants. La couche de CdHgTe est déposée par épitaxie en phase liquide sur le substrat de base, au travers d'une ou de plusieurs couches de transition réalisées en matériau binaire, ternaire ou quaternaire II - VI.Patent application FR-A-2 736 210 proposes replacing a homosubstrate of this type with a more mechanically robust substrate. In particular, this document describes a heterosubstrate comprising a basic Ge or Si substrate and an active layer of CdHgTe in which the components are made. The CdHgTe layer is deposited by liquid phase epitaxy on the base substrate, through one or more transition layers made of binary, ternary or quaternary II - VI material.
Par ailleurs, une technique de croissance par épitaxie en phase liquide (EPL) avec solvant tellure est décrite dans l'article intitulé "State of the art of LPE HgCdTe at LIR" de B. PELLICIARI, publié dans Journal of Crystal Growth 86 (1988), p. 146 - 160. La technique de croissance EPL décrite dans cet article utilise la méthode du tiroir horizontal en tube ouvert. Cette technique est parfaitement maîtrisée lorsqu'il s'agit d'épitaxies sur des monosubstrats. Par contre, lorsqu'il s'agit de substrats en germanium ou en silicium (appelés hétérosubstrats) , cette technique présente de nombreux inconvénients. En particulier, lors de la mise en contact de la solution d'épitaxie avec l'hétérosubstrat recouvert de sa couche d'adaptation en CdTe, il apparaît une dissolution de l'hétérosubstrat (CdTe/Ge) sur le bord d'entrée du substrat. A cet endroit, le substrat est, généralement, insuffisamment recouvert de CdTe et la solution d'épitaxie peut s'infiltrer le long de la tranche du substrat ; ce dernier peut alors se dissoudre ; or, la solubilité du germanium dans le solvant tellure est telle qu'en quelques minutes, plusieurs centaines de milligrammes de germanium passent dans la solution, ce qui entame le substrat et lui donne un aspect "grignoté". D'autre part, la solution de tellure est alors contaminée en atomes de germanium ; ces derniers contaminent aussi la couche de CdHgTe en cours de croissance, ce qui modifie les propriétés électriques du matériau CdHgTe et entraîne des disfonctionnements des détecteurs ainsi réalisés.Furthermore, a growth technique by liquid phase epitaxy (EPL) with tellurium solvent is described in the article entitled "State of the art of LPE HgCdTe at LIR" by B. PELLICIARI, published in Journal of Crystal Growth 86 (1988 ), p. 146 - 160. The EPL growth technique described in this article uses the horizontal drawer method in open tube. This technique is perfectly mastered when it comes to epitaxies on monosubstrates. By cons, when it comes to germanium or silicon substrates (called heterosubstrates), this technique has many drawbacks. In particular, when the epitaxy solution is brought into contact with the heterosubstrate covered with its adaptation layer in CdTe, a dissolution of the heterosubstrate (CdTe / Ge) appears on the input edge of the substrate. . At this point, the substrate is generally insufficiently covered with CdTe and the epitaxy solution can infiltrate along the edge of the substrate; the latter can then dissolve; however, the solubility of germanium in the tellurium solvent is such that in a few minutes, several hundred milligrams of germanium pass into the solution, which starts the substrate and gives it a "nibbled" appearance. On the other hand, the tellurium solution is then contaminated with germanium atoms; the latter also contaminate the layer of CdHgTe in the course of growth, which modifies the electrical properties of the CdHgTe material and causes malfunctions of the detectors thus produced.
Exposé de l'inventionStatement of the invention
L'invention a justement pour but de remédier aux inconvénients de la technique de croissance par épitaxie en phase liquide sur un hétérosubstrat, décrite ci-avant.The object of the invention is precisely to remedy the drawbacks of the technique of growth by epitaxy in the liquid phase on a heterosubstrate, described above.
A cette fin, elle propose une nacelle d'épitaxie qui permet de déposer une couche de CdHgTe par épitaxie en phase liquide sur un hétérosubstrat sans risque de dissolution de l'hétérosubstrat dans la solution de tellure. Cette nacelle comporte deux tiroirs horizontaux qui sont déplacés l'un par rapport à l'autre de façon à amener la solution de tellure au-dessus d'une zone choisie de l'hétérosubstrat, en évitant que le bord d'entrée de l'hétérosubstrat ne soit en contact avec la solution de tellure.To this end, it offers an epitaxy basket which makes it possible to deposit a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate without risk of dissolution of the heterosubstrate in the tellurium solution. This nacelle has two horizontal drawers which are moved relative to each other so as to bring the tellurium solution above a chosen area of the heterosubstrate, avoiding that the entry edge of the heterosubstrate is not in contact with the tellurium solution.
De façon plus précise, l'invention concerne une nacelle d'épitaxie pour le dépôt d'une couche de CdHgTe par épitaxie en phase liquide sur un hétérosubstrat, comportant un premier tiroir horizontal sur lequel est placé l'hétérosubstrat à recouvrir.More specifically, the invention relates to an epitaxy basket for depositing a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate, comprising a first drawer horizontal on which the heterosubstrate to be covered is placed.
Cette nacelle se caractérise par le fait qu'elle comporte aussi : - un réservoir apte à contenir une solution d'épitaxie ; un puits destiné à recevoir cette solution d'épitaxie au moment de l' épitaxie de la couche de CdHgTe et ayant des dimensions latérales inférieures à celles de l'hétérosubstrat et un espaceThis nacelle is characterized by the fact that it also includes: - a tank capable of containing an epitaxy solution; a well intended to receive this epitaxy solution at the time of the epitaxy of the layer of CdHgTe and having lateral dimensions smaller than those of the heterosubstrate and a space
(6b) entre la surface de l'hétérosubstrat et ses parois inférieur ou égal à 50 um, pour assurer un confinement de la solution sur une zone choisie de l'hétérosubstrat, entre les parois du puits ; et - un second tiroir (4) placé entre le réservoir et le puits et muni d'un orifice (7) qui assure le passage de la solution hors du réservoir vers le puits en début d'épitaxie.(6b) between the surface of the heterosubstrate and its walls less than or equal to 50 μm, to ensure confinement of the solution on a chosen zone of the heterosubstrate, between the walls of the well; and - a second drawer (4) placed between the reservoir and the well and provided with an orifice (7) which ensures the passage of the solution out of the reservoir towards the well at the start of epitaxy.
L'invention concerne également un procédé de dépôt d'une couche de CdHgTe par épitaxie en phase liquide sur un hétérosubstrat, utilisant la nacelle décrite précédemment. Ce procédé se caractérise par le fait qu'il consiste : lors d'une phase de pré-épitaxie, à introduire une solution d'épitaxie dans le réservoir et à positionner l'hétérosubstrat sur le premier tiroir ; au début d'une phase d'épitaxie, à déplacer le premier tiroir pour amener l'hétérosubstrat sous le puits, puis à déplacer le second tiroir de façon à amener l'orifice de ce second tiroir sous le réservoir et au-dessus du puits de sorte que la solution s'écoule du réservoir vers le puits ; - à la fin de la phase d'épitaxie, à déplacer le premier tiroir pour séparer l'hétérosubstrat de la solution d'épitaxie.The invention also relates to a method of depositing a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate, using the nacelle described above. This process is characterized by the fact that it consists: during a pre-epitaxy phase, of introducing an epitaxy solution into the reservoir and of positioning the heterosubstrate on the first drawer; at the start of an epitaxy phase, to move the first drawer to bring the heterosubstrate under the well, then to move the second drawer so as to bring the orifice of this second drawer under the tank and above the well so that the solution flows from the reservoir to the well; - at the end of the epitaxy phase, move the first drawer to separate the heterosubstrate from the epitaxy solution.
Selon l'invention, la solution d'épitaxie peut être de type à faible tension superficielle et l'hétérosubstrat peut être de type non-inerte.According to the invention, the epitaxy solution can be of the low surface tension type and the heterosubstrate can be of the non-inert type.
De façon avantageuse, l'hétérosubstrat utilisé dans ce procédé est facetté par un motif triangulaire qui augmente le confinement de la solution sur l'hétérosubstrat.Advantageously, the heterosubstrate used in this process is faceted by a triangular pattern which increases the confinement of the solution on the heterosubstrate.
Brève description des dessinsBrief description of the drawings
La figure 1 représente la nacelle d'épitaxie de l'invention lors de la phase de pré-épitaxie ;FIG. 1 represents the epitaxy nacelle of the invention during the pre-epitaxy phase;
- la figure 2 représente cette nacelle d'épitaxie au début de la phase d'épitaxie ; la figure 3 représente la nacelle d'épitaxie au cours de la phase d'épitaxie ; et la figure 4 représente la nacelle d'épitaxie en phase de post-épitaxie.- Figure 2 shows this epitaxy pod at the start of the epitaxy phase; FIG. 3 represents the epitaxy nacelle during the epitaxy phase; and FIG. 4 represents the epitaxy nacelle in the post-epitaxy phase.
Description détaillée de modes de réalisation de l'inventionDetailed description of embodiments of the invention
La figure 1 représente la nacelle d'épitaxie conforme à l'invention. Cette nacelle 1 comporte un premier tiroir horizontal 2 sur lequel est placé l'hétérosubstrat 3 destiné à être épitaxie. Elle comporte de plus un second tiroir horizontal 4 situé au-dessus du premier tiroir 2. Entre les deux tiroirs, la nacelle comporte un puits 6 destiné à recevoir une solution assurant l' épitaxie de l'hétérosubstrat. Cette solution appeléeFigure 1 shows the epitaxy nacelle according to the invention. This nacelle 1 comprises a first horizontal drawer 2 on which is placed the heterosubstrate 3 intended to be epitaxy. It further comprises a second horizontal drawer 4 located above the first drawer 2. Between the two drawers, the nacelle includes a well 6 intended to receive a solution ensuring the epitaxy of the heterosubstrate. This solution called
"solution d'épitaxie" est par exemple, un solvant tellure contenant du Cd et du Hg."epitaxy solution" is, for example, a tellurium solvent containing Cd and Hg.
Les dimensions latérales du puits sont choisies de façon à être inférieures à celles de l'hétérosubstrat ; on peut ainsi éviter le contact de la solution d'épitaxie avec les bords de l'hétérosubstrat, et parfaitement délimiter la zone de l'hétérosubstrat devant être épitaxiée.The lateral dimensions of the well are chosen so as to be smaller than those of the heterosubstrate; one can thus avoid the contact of the epitaxy solution with the edges of the heterosubstrate, and perfectly delimit the zone of the heterosubstrate to be epitaxied.
La nacelle 1 comporte de plus un réservoir 5 dans lequel est chargée la solution d'épitaxie lors de la phase pré-épitaxiale. Ce réservoir 5 est placé à la verticale du puits 6 ; le puits 6 et le réservoir 5 sont séparés l'un de l'autre par le second tiroir 4.The nacelle 1 further comprises a reservoir 5 into which the epitaxy solution is loaded during the pre-epitaxial phase. This reservoir 5 is placed vertically from the well 6; the well 6 and the reservoir 5 are separated from each other by the second drawer 4.
Un orifice 7 réalisé dans le second tiroir 4 assure le passage de la solution d'épitaxie depuis le réservoir 5 vers le puits 6 au début de la phase épitaxiale, lorsque le second tiroir est positionné de façon à ce que son orifice 7 soit situé entre le puits et le réservoir.An orifice 7 made in the second drawer 4 ensures the passage of the epitaxy solution from the reservoir 5 towards the well 6 at the start of the epitaxial phase, when the second drawer is positioned so that its orifice 7 is located between the well and the reservoir.
Par ailleurs, l'espace 6b entre la surface de l'hétérosubstrat et les arêtes inférieures des parois 6a du puits 6 est inférieur ou égal à 50 μm ; ceci permet d'augmenter le confinement de la solution dans le puits et de limiter les risques d'infiltration de la solution par capillarité vers les bords de 1 'hétérosubstrat . Un tel puits 6 permet donc d'éviter toute mise en contact des bords de l'hétérosubstrat avec la solution d'épitaxie. Par ailleurs, le motif facetté sur la couche de CdTe (ou CdZnTe) , caractéristique de la croissance par MOCVD (croissance en phase vapeur à partir d'organométalliques) sur le plan du substrat de base est triangulaire parce que la croissance du CdTeFurthermore, the space 6b between the surface of the heterosubstrate and the lower edges of the walls 6a of the well 6 is less than or equal to 50 μm; this makes it possible to increase the confinement of the solution in the well and to limit the risks of infiltration of the solution by capillarity towards the edges of the heterosubstrate. Such a well 6 therefore makes it possible to avoid any contacting of the edges of the heterosubstrate with the epitaxy solution. Furthermore, the faceted pattern on the layer of CdTe (or CdZnTe), characteristic of growth by MOCVD (vapor phase growth from organometallics) on the plane of the base substrate is triangular because the growth of CdTe
(ou du CdZnTe) par OMCVD se fait sur le plan cristallin(or CdZnTe) by OMCVD is done on the crystalline plane
(111) du Germanium ou du Silicium. Or, dans le cas d'une solution d'épitaxie ayant une tension superficielle très faible aux températures de travail, l'état de surface de la couche de CdTe (ou CdZnTe) épitaxiée sur l'hétérosubstrat apparaît comme un paramètre important ; ce motif triangulaire contribue donc aussi à confiner la solution d'épitaxie sur la zone choisie et, par conséquent, à éviter les risques d'extension latérale de la solution sur 1 'hétérosubstrat .(111) Germanium or Silicon. However, in the case of an epitaxy solution having a very low surface tension at working temperatures, the surface condition of the layer of CdTe (or CdZnTe) epitaxied on the heterosubstrate appears as an important parameter; this triangular pattern therefore also contributes to confining the epitaxy solution to the chosen area and, consequently, to avoiding the risks of lateral extension of the solution on the heterosubstrate.
Une telle nacelle d'épitaxie a, de plus l'avantage de permettre l' épitaxie sur des heterosubstrats non-inertes vis-à-vis de la solution d'épitaxie, par exemple des heterosubstrats en Germanium ou en Silicium.Such an epitaxy basket has the further advantage of allowing epitaxy on heterosubstrates which are non-inert with respect to the epitaxy solution, for example heterosubstrates in Germanium or in Silicon.
De par le périmètre non épitaxie, la structure facettée triangulaire de la couche de CdTe recouvrant le substrat de Ge ou Si, reste parfaitement visible après l' épitaxie en phase liquide de CdHgTe. De par le retrait de la solution en fin d'épitaxie, le bord de sortie est recouvert d'une très fine couche de CdHgTe, masquant légèrement la structure facettée triangulaire de la couche de CdTe sur ce bord là. La figure 1 montre la nacelle d'épitaxie de l'invention dans la phase pré-épitaxiale. Au cours de cette phase de pré-épitaxie, l'hétérosubstrat à traiter est déposé sur le premier tiroir 2 et mis en position d'attente ; la solution d'épitaxie est introduite dans le réservoir 5.Due to the non-epitaxy perimeter, the triangular faceted structure of the CdTe layer covering the Ge or Si substrate remains perfectly visible after the CdHgTe liquid epitaxy. By removing the solution at the end of the epitaxy, the exit edge is covered with a very thin layer of CdHgTe, slightly masking the triangular faceted structure of the layer of CdTe on this edge. Figure 1 shows the epitaxy nacelle of the invention in the pre-epitaxial phase. During this pre-epitaxy phase, the heterosubstrate to be treated is placed on the first drawer 2 and placed in the standby position; the epitaxy solution is introduced into the reservoir 5.
La figure 2 montre cette nacelle d'épitaxie au début de la phase d'épitaxie. A ce moment, le tiroir 2 est poussé de façon à amener l'hétérosubstrat à traiter sous le puits 6 qui, à cet instant, est vide.Figure 2 shows this epitaxy basket at the start of the epitaxy phase. At this time, the drawer 2 is pushed so as to bring the heterosubstrate to be treated under the well 6 which, at this instant, is empty.
La figure 3 montre l'étape où la solution d'épitaxie est amenée dans le puits, après que le second tiroir 4 ait été déplacé de façon à ce que son orifice 7 soit aligné avec le réservoir 5 et le puits 6. La solution d'épitaxie passe alors dans le puits 6 et l' épitaxie sur l'hétérosubstrat 3 peut être réalisée. Enfin, la figure 4 montre la nacelle d'épitaxie 1 en phase post-épitaxiale, c'est-à-dire lorsque l'hétérosubstrat a été épitaxie et qu'il est séparé de la solution d'épitaxie par déplacement du premier tiroir 2. L'hétérosubstrat épitaxie est référencé 3' sur cette figure 4.Figure 3 shows the step where the epitaxy solution is brought into the well, after the second drawer 4 has been moved so that its orifice 7 is aligned with the reservoir 5 and the well 6. The solution d epitaxy then passes into well 6 and epitaxy on heterosubstrate 3 can be performed. Finally, FIG. 4 shows the epitaxy nacelle 1 in the post-epitaxial phase, that is to say when the heterosubstrate has been epitaxied and it is separated from the epitaxy solution by moving the first drawer 2 The heterosubstrate epitaxy is referenced 3 'in this figure 4.
Comme expliqué précédemment, le jeu entre la surface de l'hétérosubstrat et les arêtes inférieures des parois du puits est minimisé, ce qui permet, outre le confinement de la solution dans le puits, de limiter le risque qu'une goutte de solution ne reste accrochée aléatoirement sur la surface de la couche de CdHgTe au moment où l'hétérosubstrat est séparé de la solution d'épitaxie. As explained previously, the clearance between the surface of the heterosubstrate and the lower edges of the walls of the well is minimized, which makes it possible, in addition to confining the solution in the well, to limit the risk that a drop of solution remains randomly attached to the surface of the CdHgTe layer when the heterosubstrate is separated from the epitaxy solution.

Claims

REVENDICA IONS REVENDICA IONS
1. Nacelle d'épitaxie pour le dépôt d'une couche de CdHgTe par épitaxie en phase liquide sur un hétérosubstrat (3) , comprenant un premier tiroir horizontal (2) sur lequel est placé l'hétérosubstrat à recouvrir, caractérisée en ce qu'elle comporte :1. Epitaxy basket for depositing a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate (3), comprising a first horizontal drawer (2) on which the heterosubstrate to be covered is placed, characterized in that it involves :
- un réservoir (5) apte à contenir une solution d'épitaxie ;- a reservoir (5) capable of containing an epitaxy solution;
- un puits (6) destiné à recevoir cette solution d'épitaxie au moment de l' épitaxie de la couche de CdHgTe et ayant des dimensions latérales inférieures à celles de l'hétérosubstrat et un espace (6b) entre la surface de l'hétérosubstrat et ses parois inférieur ou égal à 50 μm, pour assurer un confinement de la solution sur une zone choisie de l'hétérosubstrat, entre les parois du puits ; et- a well (6) intended to receive this epitaxy solution at the time of the epitaxy of the layer of CdHgTe and having lateral dimensions smaller than those of the heterosubstrate and a space (6b) between the surface of the heterosubstrate and its walls less than or equal to 50 μm, to ensure confinement of the solution on a chosen zone of the heterosubstrate, between the walls of the well; and
- un second tiroir (4) placé entre le réservoir et le puits et muni d'un orifice (7) qui assure le passage de la solution hors du réservoir vers le puits en début d'épitaxie.- A second drawer (4) placed between the reservoir and the well and provided with an orifice (7) which ensures the passage of the solution out of the reservoir towards the well at the start of epitaxy.
2. Procédé de dépôt d'une couche de CdHgTe par épitaxie en phase liquide sur un hétérosubstrat, utilisant la nacelle selon la revendication 1, caractérisé en ce qu'il consiste : lors d'une phase de pré-épitaxie, à introduire une solution d'épitaxie dans le réservoir et à positionner l'hétérosubstrat sur le premier tiroir ; - au début d'une phase d'épitaxie, à déplacer le premier tiroir pour amener l'hétérosubstrat sous le puits, puis à déplacer le second tiroir de façon à amener l'orifice de ce second tiroir sous le réservoir et au-dessus du puits de sorte que la solution s'écoule du réservoir vers le puits ;2. Method for depositing a layer of CdHgTe by liquid phase epitaxy on a heterosubstrate, using the nacelle according to claim 1, characterized in that it consists in: during a pre-epitaxy phase, in introducing a solution epitaxy in the reservoir and positioning the heterosubstrate on the first drawer; - at the start of an epitaxy phase, move the first drawer to bring the heterosubstrate under the well, then move the second drawer so as to bring the orifice of this second drawer under the tank and above the well so that the solution flows from the tank to the well;
- à la fin de la phase d'épitaxie, à déplacer le premier tiroir pour séparer l'hétérosubstrat de la solution d'épitaxie.- at the end of the epitaxy phase, move the first drawer to separate the heterosubstrate from the epitaxy solution.
3. Procédé selon la revendication 2, caractérisé en ce qu'il consiste à utiliser une solution d'épitaxie à faible tension superficielle. 3. Method according to claim 2, characterized in that it consists in using an epitaxy solution with low surface tension.
4. Procédé selon la revendication 2 ou 3, caractérisé en ce qu'il consiste à utiliser un hétérosubstrat non-inerte vis-à-vis de la solution d'épitaxie.4. Method according to claim 2 or 3, characterized in that it consists in using a non-inert heterosubstrate with respect to the epitaxy solution.
5. Procédé selon l'une quelconque des revendications 2 à 4, caractérisé en ce que la surface de l'hétérosubstrat est facetté par un motif triangulaire augmentant le confinement de la solution sur l'hétérosubstrat. 5. Method according to any one of claims 2 to 4, characterized in that the surface of the heterosubstrate is faceted by a triangular pattern increasing the confinement of the solution on the heterosubstrate.
EP98925759A 1997-05-21 1998-05-20 Epitaxy boat and method for liquid phase epitaxial deposit of cdhgte Withdrawn EP0983395A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9706175 1997-05-21
FR9706175A FR2763608B1 (en) 1997-05-21 1997-05-21 EPITAXY NACELLE FOR DEPOSITING A CDHGTE LAYER BY LIQUID-PHASE EPITAXY ON A HETEROSUBSTRAT AND METHOD FOR DEPOSITING CDHGTE ON A HETEROSUBSTRAT USING THE NACELLE
PCT/FR1998/001013 WO1998053123A1 (en) 1997-05-21 1998-05-20 Epitaxy boat and method for liquid phase epitaxial deposit of cdhgte

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GB0407804D0 (en) 2004-04-06 2004-05-12 Qinetiq Ltd Manufacture of cadmium mercury telluride
WO2006013344A1 (en) 2004-08-02 2006-02-09 Qinetiq Limited Manufacture of cadmium mercury telluride on patterned silicon
CN111118597B (en) * 2018-10-31 2022-03-29 中国电子科技集团公司第四十八研究所 Graphite boat for horizontal liquid phase epitaxial growth

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NL185375C (en) * 1980-01-16 1990-03-16 Philips Nv DEVICE FOR THE EPITAXIAL APPLICATION OF A LOW SEMICONDUCTOR MATERIAL.
CA1201220A (en) * 1984-02-23 1986-02-25 Mikelis N. Svilans Melt dispensing liquid phase epitaxy boat
FR2588885B1 (en) * 1985-10-22 1987-11-27 Labo Electronique Physique CRUCIBLE FOR LIQUID-PHASE EPITAXY OF SEMICONDUCTOR LAYERS OF CONTROLLED COMPOSITION
JPH042689A (en) * 1990-04-19 1992-01-07 Mitsubishi Electric Corp Method for hetero-epitaxial liquid phase growth

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