EP0922293A4 - - Google Patents
Info
- Publication number
- EP0922293A4 EP0922293A4 EP97927842A EP97927842A EP0922293A4 EP 0922293 A4 EP0922293 A4 EP 0922293A4 EP 97927842 A EP97927842 A EP 97927842A EP 97927842 A EP97927842 A EP 97927842A EP 0922293 A4 EP0922293 A4 EP 0922293A4
- Authority
- EP
- European Patent Office
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/660,538 US5865659A (en) | 1996-06-07 | 1996-06-07 | Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements |
US660536 | 1996-06-07 | ||
US660538 | 1996-06-07 | ||
US08/660,536 US6187603B1 (en) | 1996-06-07 | 1996-06-07 | Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material |
PCT/US1997/009198 WO1997047021A1 (en) | 1996-06-07 | 1997-06-05 | Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0922293A4 true EP0922293A4 (xx) | 1999-06-16 |
EP0922293A1 EP0922293A1 (en) | 1999-06-16 |
EP0922293B1 EP0922293B1 (en) | 2004-08-18 |
Family
ID=27098119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97927842A Expired - Lifetime EP0922293B1 (en) | 1996-06-07 | 1997-06-05 | Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0922293B1 (xx) |
JP (1) | JP4226651B2 (xx) |
KR (1) | KR100323289B1 (xx) |
DE (1) | DE69730333T2 (xx) |
TW (1) | TW389928B (xx) |
WO (1) | WO1997047021A1 (xx) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6007396A (en) * | 1997-04-30 | 1999-12-28 | Candescent Technologies Corporation | Field emitter fabrication using megasonic assisted lift off |
FR2779243B1 (fr) * | 1998-05-26 | 2000-07-07 | Commissariat Energie Atomique | Procede de realisation par photolithographie d'ouvertures auto-alignees sur une structure, en particulier pour ecran plat a micropointes |
JP2000235832A (ja) * | 1998-07-23 | 2000-08-29 | Sony Corp | 冷陰極電界電子放出素子、冷陰極電界電子放出型表示装置、及びそれらの製造方法 |
US6297587B1 (en) | 1998-07-23 | 2001-10-02 | Sony Corporation | Color cathode field emission device, cold cathode field emission display, and process for the production thereof |
GB2349271B (en) * | 1998-07-23 | 2001-08-29 | Sony Corp | Cold cathode field emission device and cold cathode field emission display |
KR100601973B1 (ko) | 2004-11-25 | 2006-07-18 | 삼성전자주식회사 | 나노 입자를 이용한 나노 스케일의 반도체 소자의 제조 방법 |
JP2009170280A (ja) * | 2008-01-17 | 2009-07-30 | Sony Corp | 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法 |
TWI441237B (zh) * | 2012-05-31 | 2014-06-11 | Au Optronics Corp | 場發射顯示器之畫素結構的製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5007873A (en) * | 1990-02-09 | 1991-04-16 | Motorola, Inc. | Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process |
US5249340A (en) * | 1991-06-24 | 1993-10-05 | Motorola, Inc. | Field emission device employing a selective electrode deposition method |
EP0707237A1 (fr) * | 1994-10-10 | 1996-04-17 | Commissariat A L'energie Atomique | Procédé de formation de trous dans une couche de résine photosensible, application à la fabrication de sources d'électrons à cathodes emissives a micropointes et d'écrans plats de visualisation |
WO1997047020A1 (en) * | 1996-06-07 | 1997-12-11 | Candescent Technologies Corporation | Gated electron emission device and method of fabrication thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4407695A (en) * | 1981-12-31 | 1983-10-04 | Exxon Research And Engineering Co. | Natural lithographic fabrication of microstructures over large areas |
JP2717048B2 (ja) * | 1992-11-12 | 1998-02-18 | 株式会社日立製作所 | 磁気ディスク製造方法および製造装置 |
US5462467A (en) * | 1993-09-08 | 1995-10-31 | Silicon Video Corporation | Fabrication of filamentary field-emission device, including self-aligned gate |
DE4331185C1 (de) * | 1993-09-14 | 1994-12-15 | Siemens Ag | Verfahren zur Kontaktlochauffüllung in einem Halbleiterschichtaufbau |
US5466626A (en) * | 1993-12-16 | 1995-11-14 | International Business Machines Corporation | Micro mask comprising agglomerated material |
US5538450A (en) * | 1994-04-29 | 1996-07-23 | Texas Instruments Incorporated | Method of forming a size-arrayed emitter matrix for use in a flat panel display |
US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
US5509840A (en) * | 1994-11-28 | 1996-04-23 | Industrial Technology Research Institute | Fabrication of high aspect ratio spacers for field emission display |
-
1997
- 1997-06-05 JP JP50069898A patent/JP4226651B2/ja not_active Expired - Fee Related
- 1997-06-05 WO PCT/US1997/009198 patent/WO1997047021A1/en active IP Right Grant
- 1997-06-05 DE DE69730333T patent/DE69730333T2/de not_active Expired - Lifetime
- 1997-06-05 EP EP97927842A patent/EP0922293B1/en not_active Expired - Lifetime
- 1997-06-05 KR KR1019980710145A patent/KR100323289B1/ko not_active IP Right Cessation
- 1997-06-07 TW TW086107885A patent/TW389928B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5007873A (en) * | 1990-02-09 | 1991-04-16 | Motorola, Inc. | Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process |
US5249340A (en) * | 1991-06-24 | 1993-10-05 | Motorola, Inc. | Field emission device employing a selective electrode deposition method |
EP0707237A1 (fr) * | 1994-10-10 | 1996-04-17 | Commissariat A L'energie Atomique | Procédé de formation de trous dans une couche de résine photosensible, application à la fabrication de sources d'électrons à cathodes emissives a micropointes et d'écrans plats de visualisation |
WO1997047020A1 (en) * | 1996-06-07 | 1997-12-11 | Candescent Technologies Corporation | Gated electron emission device and method of fabrication thereof |
Non-Patent Citations (1)
Title |
---|
See also references of WO9747021A1 * |
Also Published As
Publication number | Publication date |
---|---|
TW389928B (en) | 2000-05-11 |
DE69730333T2 (de) | 2005-09-01 |
DE69730333D1 (de) | 2004-09-23 |
KR100323289B1 (ko) | 2002-03-08 |
EP0922293A1 (en) | 1999-06-16 |
JP2000512067A (ja) | 2000-09-12 |
EP0922293B1 (en) | 2004-08-18 |
KR20000016555A (ko) | 2000-03-25 |
WO1997047021A1 (en) | 1997-12-11 |
JP4226651B2 (ja) | 2009-02-18 |
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Legal Events
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