EP0903427A4 - Apparatus and method for producing crystals by the czochralski method and crystals produced by this method - Google Patents

Apparatus and method for producing crystals by the czochralski method and crystals produced by this method

Info

Publication number
EP0903427A4
EP0903427A4 EP97902656A EP97902656A EP0903427A4 EP 0903427 A4 EP0903427 A4 EP 0903427A4 EP 97902656 A EP97902656 A EP 97902656A EP 97902656 A EP97902656 A EP 97902656A EP 0903427 A4 EP0903427 A4 EP 0903427A4
Authority
EP
European Patent Office
Prior art keywords
crystals
czochralski
producing
produced
crystals produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97902656A
Other languages
German (de)
French (fr)
Other versions
EP0903427B1 (en
EP0903427A1 (en
Inventor
Masahiro Sakurada
Yuichi Miyahara
Tomohiko Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP0903427A1 publication Critical patent/EP0903427A1/en
Publication of EP0903427A4 publication Critical patent/EP0903427A4/en
Application granted granted Critical
Publication of EP0903427B1 publication Critical patent/EP0903427B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide
EP97902656A 1996-02-14 1997-02-12 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method Expired - Lifetime EP0903427B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP50898/96 1996-02-14
JP05089896A JP3533812B2 (en) 1996-02-14 1996-02-14 Crystal manufacturing apparatus by Czochralski method, crystal manufacturing method, and crystal manufactured by this method
JP5089896 1996-02-14
PCT/JP1997/000359 WO1997030195A1 (en) 1996-02-14 1997-02-12 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method

Publications (3)

Publication Number Publication Date
EP0903427A1 EP0903427A1 (en) 1999-03-24
EP0903427A4 true EP0903427A4 (en) 2000-07-12
EP0903427B1 EP0903427B1 (en) 2003-09-03

Family

ID=12871570

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97902656A Expired - Lifetime EP0903427B1 (en) 1996-02-14 1997-02-12 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method

Country Status (6)

Country Link
US (1) US6071337A (en)
EP (1) EP0903427B1 (en)
JP (1) JP3533812B2 (en)
KR (1) KR100421125B1 (en)
DE (1) DE69724612T2 (en)
WO (1) WO1997030195A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19622664A1 (en) * 1996-06-05 1997-12-11 Wacker Siltronic Halbleitermat Method and device for producing single crystals
WO1999010570A1 (en) * 1997-08-26 1999-03-04 Sumitomo Metal Industries, Ltd. High-quality silicon single crystal and method of producing the same
JPH11349393A (en) * 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd Silicon single crystal wafer and production of silicon single crystal wafer
DE69902911T2 (en) * 1998-06-26 2003-01-16 Memc Electronic Materials RESISTANCE HEATING FOR A CRYSTAL GROWING DEVICE AND METHOD FOR USE THEREOF
DE19912484A1 (en) * 1999-03-19 2000-09-28 Freiberger Compound Mat Gmbh Device for the production of single crystals
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
WO2004044276A1 (en) 2002-11-12 2004-05-27 Memc Electronic Materials, Inc. A crystal puller and method for growing a monocrystalline ingot
JP5439972B2 (en) * 2009-06-19 2014-03-12 株式会社Ｓｕｍｃｏ Manufacturing method of large-diameter silicon single crystal
CN102400210A (en) * 2010-09-08 2012-04-04 北京有色金属研究总院 Method for adjusting defects in Czochralski silicon single crystal
CN112680784B (en) * 2019-10-18 2023-12-26 中环领先(徐州)半导体材料有限公司 Single crystal furnace and method for preparing crystal bar by using same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0355833A2 (en) * 1988-08-25 1990-02-28 Shin-Etsu Handotai Company Limited Method of producing compound semiconductor single crystal
EP0504837A2 (en) * 1991-03-20 1992-09-23 Shin-Etsu Handotai Company Limited Method and apparatus for producing silicon single crystal
JPH0826881A (en) * 1994-07-19 1996-01-30 Toshiba Denko Kk Device for pulling up silicon single crystal and container for pulling used therefor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824519A (en) * 1987-10-22 1989-04-25 Massachusetts Institute Of Technology Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt
JPH0524979A (en) * 1991-07-18 1993-02-02 Hitachi Cable Ltd Apparatus for manufacturing compound semiconductor crystal
JPH072594A (en) * 1993-06-15 1995-01-06 Japan Energy Corp Apparatus for producing semiconductor crystal
JP2822887B2 (en) * 1994-06-16 1998-11-11 信越半導体株式会社 Method for producing silicon single crystal with few crystal defects
JPH0826879A (en) * 1994-07-11 1996-01-30 Furukawa Electric Co Ltd:The Device for pulling up single crystal of compound semiconductor and production of single crystal of compound semiconductor
JP3128795B2 (en) * 1995-06-09 2001-01-29 信越半導体株式会社 Crystal manufacturing apparatus and manufacturing method by Czochralski method
JPH0940492A (en) * 1995-07-27 1997-02-10 Hitachi Cable Ltd Production of single crystal and apparatus for production therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0355833A2 (en) * 1988-08-25 1990-02-28 Shin-Etsu Handotai Company Limited Method of producing compound semiconductor single crystal
EP0504837A2 (en) * 1991-03-20 1992-09-23 Shin-Etsu Handotai Company Limited Method and apparatus for producing silicon single crystal
JPH0826881A (en) * 1994-07-19 1996-01-30 Toshiba Denko Kk Device for pulling up silicon single crystal and container for pulling used therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05 31 May 1996 (1996-05-31) *

Also Published As

Publication number Publication date
DE69724612D1 (en) 2003-10-09
KR19990082507A (en) 1999-11-25
EP0903427B1 (en) 2003-09-03
JPH09221380A (en) 1997-08-26
US6071337A (en) 2000-06-06
EP0903427A1 (en) 1999-03-24
DE69724612T2 (en) 2004-08-05
KR100421125B1 (en) 2004-04-17
WO1997030195A1 (en) 1997-08-21
JP3533812B2 (en) 2004-05-31

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