EP0882964A1 - Dispositif semiconducteur capteur de pression et son procédé de fabrication - Google Patents

Dispositif semiconducteur capteur de pression et son procédé de fabrication Download PDF

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Publication number
EP0882964A1
EP0882964A1 EP98109667A EP98109667A EP0882964A1 EP 0882964 A1 EP0882964 A1 EP 0882964A1 EP 98109667 A EP98109667 A EP 98109667A EP 98109667 A EP98109667 A EP 98109667A EP 0882964 A1 EP0882964 A1 EP 0882964A1
Authority
EP
European Patent Office
Prior art keywords
pressure
pressure sensor
component
rubber
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98109667A
Other languages
German (de)
English (en)
Inventor
Eric Bootz
Thies Janczek
Achim Neu
Bernd Stadler
Jürgen WINTERER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0882964A1 publication Critical patent/EP0882964A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/141—Monolithic housings, e.g. molded or one-piece housings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/0627—Protection against aggressive medium in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Definitions

  • the invention relates to a pressure sensor component according to the preamble of claim 1 and a method for Manufacture of a pressure sensor component according to the preamble of claim 8.
  • the medium to be measured must be connected to the Sensor brought up or the pressure prevailing in the medium are transmitted to the sensor.
  • that requires Application of a semiconductor pressure sensor in the final Application of the protected encapsulation of the sensor chip Wrapping with a suitable material, usually plastic.
  • the encapsulation or encapsulation of the sensor chip requires several process steps in which the component final form is given and an electrical connection cable after the soldering is overmolded with the printed circuit board.
  • the application of the is usually known on the Basic material silicon-based semiconductor chips in one rigid housing, for example DIP housing (dual inline package housing), SMD housing (surface-mounted design housing) or also in special designs, this housing below on a circuit board.
  • DIP housing dual inline package housing
  • SMD housing surface-mounted design housing
  • This housing below on a circuit board.
  • the pressure coupling is carried out via a sensitive sensor covering and thus protective membrane made of metal or plastic, which also as a separate Additional component can be executed. Problems arise often due to insufficient pressure coupling through the housing to the sensor chip with simultaneous Protection of the sensor. Generally one is easy to manufacture and tight connection between the medium to be measured and the sensor required to correct the pressure measurement Avoid inflow of outside air.
  • the invention has for its object a pressure sensor component or a method for producing a pressure sensor component of the type mentioned at the beginning to provide, in which the encapsulation of the mechanically sensitive Pressure sensor carrying semiconductor chips respectively of the chip carrier is structurally simpler and therefore also can be done more cheaply, and at the same time a comparatively easy to set up but still sufficient tight connection between the medium to be measured and the Pressure sensor can be guaranteed.
  • the invention Method for producing the pressure sensor component provides for after mounting and contacting the semiconductor chip on the chip carrier the component with the semiconductor chip and / or the component encapsulation surrounding the chip carrier to be made of an electrically insulating material, wherein at least that of the pressure detection area of the Section of the component encapsulation assigned to the pressure sensor a homogeneous pressure transmission medium consisting of a pressure to be measured is as delay and damping-free as possible transmitting, but mechanically resistant, in any case after a curing in the Essentially dimensionally stable covering compound designed in this way or is arranged that the pressure to be measured by the Masking compound directly on the pressure detection surface of the Semiconductor chips is guided, and a cover that is sealed on all sides of the pressure sensor or the pressure sensor component opposite given mechanical and / or chemical influences is.
  • an LSR (Liquid Silicon Rubber) process is carried out at which is inserted in a cavity of an injection mold Components of the component with a liquid silicone rubber or rubber are overmolded, and then with comparatively low pressure and heat treatment the silicone rubber or rubber is cured, and on it then the remaining encapsulation of the pressure sensor component is made.
  • LSR Liquid Silicon Rubber
  • the sensor is complete due to the pressure sensor component enveloping covering compound as well as the further component encapsulation protected against environmental influences, the ones to be measured Pressures are transmitted without loss and without delay.
  • the component can be advantageous in both its size and weight can be minimized.
  • the external dimensions and appearance of the masking compound containing device encapsulation are in themselves no limits; by changing the housing shape or adaptation used in the encapsulation of the component Coming injection mold can the sensor with the same function be trained for different applications.
  • Conceivable are, for example, plug-in or snap connections as they are be used in the automotive industry.
  • the masking compound of the pressure transmission medium transmitting the pressure to be measured a rubber or a rubber or a rubber or rubbery material, preferably a particular one thermally cross-linkable silicone rubber or silicone rubber material represents.
  • a maximum of about 300 ⁇ m is preferably at most 100 microns to 200 microns.
  • the targeted Guaranteed use of a very thin layer of about 100 microns thus a minimal pressure delay or damping as well as sensitivity to accelerations and thus related repercussions on the pressure measurements of the sensor chip.
  • the chip is still sufficient against chemical ones Protected from environmental influences, and mechanical protection guaranteed to a certain extent depending on the desired design.
  • Figure 1 shows an embodiment of an inventive Pressure sensor component 1 for surface mounting the assembly area of a printed circuit board.
  • the pressure sensor component 1 has an approximately flat chip carrier surface 2 having chip carrier 3 made of electrically conductive Material on which chip carrier surface 2 a semiconductor chip 4 made of silicon base material with an integrated training Pressure sensor and this associated electronic circuit is attached, the pressure sensor and the circuit in the Figures are not shown in detail, but only schematically a pressure detection area 5 is indicated, the pressure P to be measured is exposed.
  • the pressure sensor component 1 has a Semiconductor chip 4 and / or the chip carrier 3 at least in regions enclosing component encapsulation 6 from one electrically insulating material, for example a thermoset or thermoplastic material.
  • the chip carrier 3 is in on known design as a so-called "lead frame", i.e. as prefabricated chip carrier substrate and has one A large number of component encapsulation 6, by means of bonding wires 7 electrically with the pressure sensor or the associated electronic circuit of the semiconductor chip connected electrode connections 8, 9 (in FIG. 1 only two electrode connections are shown, whereby the electrode connection 9 via a rear-side contact 10 directly with the bottom of the semiconductor chip 4 electrical coupled), which is in the form of at least two sides of the chip carrier 3 lead leads formed are in a known manner too short rock-shaped Connection stubs are bent and cut.
  • a such an arrangement ensures the assembly of the component 1 on the assembly surface of a (not shown) PCB in SMD technology.
  • the pressure sensor integrated on the semiconductor chip 4 made of silicon represents a so-called piezoresistive sensor, in which one in the surface of the chip 4 by methods of Micromechanical manufactured thin silicon membrane provided which is electrically coupled with pressure dependent resistors which is also formed in the silicon substrate are and in a conventional manner in a bridge circuit are switched. Also integrated in the semiconductor chip 4 is a circuit assigned to the sensor that is used for signal processing (Reinforcement and correction), but also a comparison and serves to compensate the sensor.
  • the invention is based horizontal semiconductor pressure sensors primarily for such Applications where the smallest size is important for example in the case of pressure measurements in the motor vehicle sector, for example when measuring brake pressures, Tire pressures, combustion chamber pressures and the like.
  • semiconductor pressure sensors which are based on the principle of piezoresistive Pressure measurement work are also such usable that work with capacitive measuring principles.
  • the senor is the one to be measured Pressure P that transmits as little delay and damping as possible, however mechanically resistant, at least after any curing that may have been carried out dimensionally stable masking compound 11 as a homogeneous pressure transmission medium covered.
  • the covering compound 11 preferably has Silicone rubber material or silicone rubber material, which initially has a liquid or flowable consistency and thermally after shaping by heat treatment is networked and then essentially dimensionally stable remains.
  • the effective layer thickness for the pressure transmission Pressure transmission medium above the pressure detection area 5 is selected so that the pressure to be measured can be transmitted without delay and damping, and at the same time those manufactured using low loop bonding Bond wires 7 low loop height still within the masking compound 11 or the encapsulation material 6 embedded are.
  • a layer thickness a of about 100 ⁇ m only causes one low pressure delay or damping, guaranteed in one some degree of adequate mechanical protection. In in any case, the layer thickness a is below about 300 ⁇ m.
  • Manufacture of the pressure sensor component is the first Pressure sensitive area provided with the flexible covering compound 11.
  • LSR Liquid Silicon Rubber
  • an injection mold in a wooden room inserted components of the component, that is Leadframe 3 with attached chip 4 together with bonding wires 7 are encapsulated in a liquid silicone rubber or rubber, and then at comparatively low pressure and a heat treatment, the covering compound 11 is cured.
  • the component is then attached using standard molding compounds such as thermosetting or thermoplastic molding compounds in encapsulated in a known manner and thus a mechanically resistant Construction manufactured.
  • Encapsulation 6 can thus be a pressing process known per se used with thermosetting thermoset, such as it is used with standard components.
  • thermosets As with transfer presses with thermosets, is the one for a pressing process required amount of plastic heated at one point and plasticized and from there with a stamp through channels into the closed tool with the component to be encased pressed where it hardens and then as a finished product can be removed.
  • the component according to the invention essentially enables one undisturbed pressure coupling with tight cover at the same time of the sensor in a mechanically very resistant Casing.
  • the housing is resistant to chemical influences.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
EP98109667A 1997-06-06 1998-05-27 Dispositif semiconducteur capteur de pression et son procédé de fabrication Withdrawn EP0882964A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19724026A DE19724026A1 (de) 1997-06-06 1997-06-06 Drucksensor-Bauelement und Verfahren zur Herstellung
DE19724026 1997-06-06

Publications (1)

Publication Number Publication Date
EP0882964A1 true EP0882964A1 (fr) 1998-12-09

Family

ID=7831761

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98109667A Withdrawn EP0882964A1 (fr) 1997-06-06 1998-05-27 Dispositif semiconducteur capteur de pression et son procédé de fabrication

Country Status (2)

Country Link
EP (1) EP0882964A1 (fr)
DE (1) DE19724026A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007017301A1 (fr) * 2005-08-05 2007-02-15 Robert Bosch Gmbh Convertisseur de force/de pression micromecanique moule et procede de fabrication associe
CN113865774A (zh) * 2021-09-18 2021-12-31 苏州森斯缔夫传感科技有限公司 一种压力传感器及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823605A (en) * 1987-03-18 1989-04-25 Siemens Aktiengesellschaft Semiconductor pressure sensor with casing and method for its manufacture
US4888226A (en) * 1988-08-08 1989-12-19 American Telephone And Telegraph Company Silicone gel electronic device encapsulant
DE4238113A1 (de) * 1992-11-12 1994-05-19 Mikroelektronik Und Technologi Anordnung zur spannungsfreien Chipmontage
US5610230A (en) * 1994-11-24 1997-03-11 Shin-Etsu Chemical Co., Ltd. Liquid silicone rubber compositions

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0218228B1 (fr) * 1985-10-07 1993-09-15 Shin-Etsu Chemical Co., Ltd. Composition à base de résine époxyde
JPH04258176A (ja) * 1991-02-12 1992-09-14 Mitsubishi Electric Corp 半導体圧力センサ
KR940001333A (ko) * 1992-06-16 1994-01-11 문정환 수지봉합형 고체촬상소자 패키지 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823605A (en) * 1987-03-18 1989-04-25 Siemens Aktiengesellschaft Semiconductor pressure sensor with casing and method for its manufacture
US4888226A (en) * 1988-08-08 1989-12-19 American Telephone And Telegraph Company Silicone gel electronic device encapsulant
DE4238113A1 (de) * 1992-11-12 1994-05-19 Mikroelektronik Und Technologi Anordnung zur spannungsfreien Chipmontage
US5610230A (en) * 1994-11-24 1997-03-11 Shin-Etsu Chemical Co., Ltd. Liquid silicone rubber compositions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007017301A1 (fr) * 2005-08-05 2007-02-15 Robert Bosch Gmbh Convertisseur de force/de pression micromecanique moule et procede de fabrication associe
CN113865774A (zh) * 2021-09-18 2021-12-31 苏州森斯缔夫传感科技有限公司 一种压力传感器及其制造方法

Also Published As

Publication number Publication date
DE19724026A1 (de) 1998-12-10

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