EP0840243A3 - Method capable of accurately simulating ion implantation at a high speed - Google Patents
Method capable of accurately simulating ion implantation at a high speed Download PDFInfo
- Publication number
- EP0840243A3 EP0840243A3 EP97119082A EP97119082A EP0840243A3 EP 0840243 A3 EP0840243 A3 EP 0840243A3 EP 97119082 A EP97119082 A EP 97119082A EP 97119082 A EP97119082 A EP 97119082A EP 0840243 A3 EP0840243 A3 EP 0840243A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- ion
- implanted
- renewed
- ion implantation
- implanted ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005468 ion implantation Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000342 Monte Carlo simulation Methods 0.000 abstract 1
- 230000001174 ascending effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
- G06F30/23—Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2111/00—Details relating to CAD techniques
- G06F2111/08—Probabilistic or stochastic CAD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
Abstract
On simulating ion implantation on the basis of
Monte Carlo method, a plurality of triangle meshes are
produced to a polygonal substrate to be label serial
numbers at a first step (S1). An ion is implanted as an
implanted ion to the polygonal substrate at a second step
(S2). At a third step (S3), the triangle meshes are
checked in an ascending order until one of triangle
meshes is found as a specific triangle mesh in which the
implanted ion is positioned. Point defect concentration
is extracted from the specific triangle mesh at a fourth
step (S4). Random numbers are generated in order to
calculate scattering of the implanted ion a fifth step
(S5, S6). The point defect concentration is renewed into
a renewed point defect concentration in the specific
triangle mesh at a sixth step (S7). The energy, the
position, and the travelling direction is renewed in the
implanted ion at a seventh step (S8). The third to the
seventh steps is repeated until the implanted ion stops
in said polygonal substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08289410A JP3102362B2 (en) | 1996-10-31 | 1996-10-31 | Ion implantation simulation method |
| JP28941096 | 1996-10-31 | ||
| JP289410/96 | 1996-10-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0840243A2 EP0840243A2 (en) | 1998-05-06 |
| EP0840243A3 true EP0840243A3 (en) | 1999-10-27 |
Family
ID=17742888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP97119082A Withdrawn EP0840243A3 (en) | 1996-10-31 | 1997-10-31 | Method capable of accurately simulating ion implantation at a high speed |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5977551A (en) |
| EP (1) | EP0840243A3 (en) |
| JP (1) | JP3102362B2 (en) |
| KR (1) | KR100286734B1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002025930A (en) * | 2000-07-13 | 2002-01-25 | Nec Corp | Data table preparing method and recording medium |
| JP3787060B2 (en) | 2000-09-11 | 2006-06-21 | 株式会社東芝 | Monte Carlo ion implantation simulation method, Monte Carlo ion implantation simulator, recording medium storing a Monte Carlo ion implantation simulation program, and semiconductor device manufacturing method |
| US6735556B2 (en) | 2001-06-15 | 2004-05-11 | International Business Machines Corporation | Real-time model evaluation |
| US7302376B2 (en) * | 2002-08-15 | 2007-11-27 | International Business Machines Corporation | Device modeling for proximity effects |
| CN100428413C (en) * | 2006-05-22 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Ion injection simulation method |
| JP2012043996A (en) * | 2010-08-19 | 2012-03-01 | Toshiba Corp | Ion implantation simulation program |
| CN108517559B (en) * | 2018-03-07 | 2020-12-29 | 电子科技大学 | Method for auxiliary control of ion implantation time based on Monte Carlo simulation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4800100A (en) * | 1987-10-27 | 1989-01-24 | Massachusetts Institute Of Technology | Combined ion and molecular beam apparatus and method for depositing materials |
-
1996
- 1996-10-31 JP JP08289410A patent/JP3102362B2/en not_active Expired - Fee Related
-
1997
- 1997-10-30 US US08/961,098 patent/US5977551A/en not_active Expired - Fee Related
- 1997-10-30 KR KR1019970056425A patent/KR100286734B1/en not_active IP Right Cessation
- 1997-10-31 EP EP97119082A patent/EP0840243A3/en not_active Withdrawn
Non-Patent Citations (3)
| Title |
|---|
| LAUX S E: "On particle-mesh coupling in Monte Carlo semiconductor device simulation", IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, OCT. 1996, IEEE, USA, vol. 15, no. 10, pages 1266 - 1277, XP000633878, ISSN: 0278-0070 * |
| LEITNER E ET AL: "3D TCAD at TU Vienna", 3-DIMENSIONAL PROCESS SIMULATION, 3-DIMENSIONAL PROCESS SIMULATION, ERLANGEN, GERMANY, 5 SEPT. 1995, 1995, Wien, Austria, Springer-Verlag, Austria, pages 136 - 161, XP002113075, ISBN: 3-211-82741-2 * |
| STIPPEL H ET AL: "Adaptive grid for Monte Carlo simulation of ion implantation", WORKSHOP ON NUMERICAL MODELING OF PROCESSES AND DEVICES FOR INTEGRATED CIRCUITS: NUPAD IV (CAT. NO.92TH0424-2), PROCEEDINGS OF 1992 IEEE WORKSHOP ON NUMERICAL MODELING OF PROCESSES AND DEVICES FOR INTEGRATED CIRCUITS: NUPAD IV, SEATTLE, WA, USA, 31 M, 1992, New York, NY, USA, IEEE, USA, pages 231 - 236, XP002113076, ISBN: 0-7803-0516-7 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100286734B1 (en) | 2001-05-02 |
| US5977551A (en) | 1999-11-02 |
| JPH10135145A (en) | 1998-05-22 |
| JP3102362B2 (en) | 2000-10-23 |
| EP0840243A2 (en) | 1998-05-06 |
| KR19980033339A (en) | 1998-07-25 |
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| 17P | Request for examination filed |
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| 17Q | First examination report despatched |
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| AKX | Designation fees paid |
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| GRAH | Despatch of communication of intention to grant a patent |
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| GRAH | Despatch of communication of intention to grant a patent |
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| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: NEC ELECTRONICS CORPORATION |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
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| 18W | Application withdrawn |
Effective date: 20030605 |