CN100428413C - Ion injection simulation method - Google Patents
Ion injection simulation method Download PDFInfo
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- CN100428413C CN100428413C CNB2006100267592A CN200610026759A CN100428413C CN 100428413 C CN100428413 C CN 100428413C CN B2006100267592 A CNB2006100267592 A CN B2006100267592A CN 200610026759 A CN200610026759 A CN 200610026759A CN 100428413 C CN100428413 C CN 100428413C
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Abstract
The invention discloses an ion implantation analogy method, which comprises the following steps: firstly, getting the measured ion implantation distribution curve of the different ion implantation section; secondly, setting the analogue function with TCAD tool, fitting the distribution curve of the ion implantation, getting the distribution analogue basic curve of the ion implantation and acquiring the analog basic data; extracting the analog parameter from the analog basic data, acquiring the analog parameter data series by the analog calculation, forming the parameter matrix of the ion implantation; imitating the different ion implantation processes with the parameter matrix of the ion implantation and acquiring the distribution serial curve of the ion implantation; at last, getting the influence regularity of the ion implantation distribution in the material produced by the parameter variation of the ion implantation by the ion implantation distribution serial curve. The invention can provides the process control window of the ion implantation, which optimizes the process designing of the ion implantation, reduces the analog operating time, and reduces the research cost.
Description
Technical field
The present invention relates to the processing simulation technical field, particularly a kind of analogy method of manufacture of semiconductor intermediate ion injection technology.
Background technology
Ion implantation technique is because can be by changing the electric property of device behind the impurity of introducing may command quantity in device substrate, and is widely used in the modem semi-conductor devices manufacture process.In field of manufacturing semiconductor devices, ion implantation technique is mainly used in mixes impurity to semi-conducting material.Usually, different devices have specific requirement to the concentration and the degree of depth of mixing impurity; Two important parameters that dosage that ion injects and range are ion implantation technology, it is the target that ion implantation technology is optimized that dosage that ion is injected and range are accurately controlled.The range that ion injects is by injecting the energy of ions decision.
Therefore, research ion implantation dosage and energy becomes those skilled in the art and expects the important topic that solves the rule that influences of injecting that ion distributes in semi-conducting material.
In the prior art, adopt usually secondary ion mass spectroscopy (second ion mass spectrogram, SIMS) or the Ou Jie electronic spectrum (Aujel electronic spectrogram AES) analyzes ion and injects injection ion distribution in the material of back.Because sims analysis is the destructive analysis technology, and detection time is long, cost is high, can't satisfy demand of practical production conscientiously.
Consider, by process computer Aided Design (Technology Computer Aided Design, TCAD) platform, the analogue technique of technology and device physics characteristic being carried out emulation has been widely used in the semiconductor technology design, thus, utilize the TCAD instrument, by ion implantation technology is carried out emulation obtain ion implantation dosage and energy to inject that ion distributes in material influence rule, and then ion implantation technology control window is provided, become the main means of optimizing the ion implantation technology design.
Application number provides a kind of ion implantation process analogy method in the Chinese patent application of " 98100467.9 ", utilization is by two Pearsons (dual Pearson) function representation ion injection profile of forming of Pearson canonical function linear combination of two different section compositions of representative, linear combination coefficient is and two different section dose of components values that the Pearson canonical function is corresponding, utilize interpolation method and extrapolation to obtain dose value coefficient series again, and then form the different linear combinations of two Pearson canonical functions, constitute dual Pearson series of functions, with the simulation ion implantation process.Obviously, the variation that the method has been emphasized corresponding different section dose of components values is to injecting the influence of ion distribution, and ignored ion implantation process various moment parameter to injecting the influence of ion distribution, promptly described method fails accurately to simulate ion implantation process.Therefore, be badly in need of a kind of analogy method that can accurately simulate various moment parameter variations in the ion implantation process.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of ion injection simulation method,, obtain ion implantation dosage and energy then inject the rule that influences that ion distributes in material in order to accurate simulation ion implantation process, so that ion implantation technology control window to be provided, optimize the ion implantation technology design.
For achieving the above object, a kind of ion injection simulation method provided by the invention comprises:
At first, the ion distribution curve is injected in the actual measurement that obtains the different ions injection profile;
Then, utilize the process computer design aids, set two Pearson's function I (u)=rI
Amorphous state(u, R
Pa, σ
a, γ
a, β
aThe I of)+(1-r)
Channeling effect(u, R
Pc, σ
c, γ
c, β
c), adopt the described injection ion distribution of monte carlo method match curve, obtain injecting ion distribution analog basis curve, and obtain the analog basis data, r is the ratio that amorphous state composition dose value accounts for full dose value; Ion is walked apart from u, the R of drop shadow spread
p, standard deviation, degree of skewness γ and kurtosis β be the moment parameter;
From analog basis extracting data analog parameter basic data, utilize interpolation method, by simulation trial, obtain the analog parameter DS, form ion injection parameter matrix;
At last, utilize ion injection parameter matrix, simulation different ions injection process obtains to inject the ion distribution serial curve.
Described actual measurement is injected the ion distribution curve and is obtained via secondary ion mass spectroscopy analysis or the analysis of Ou Jie electronic spectrum;
Described number and choosing according to simulation requirement, process conditions and product requirement of parameter via the ion injection profile of surveying determined; The number that the ion distribution curve is injected in described actual measurement is less than required simulation injection ion distribution curve number; The boundary value of the injection ion distribution curve ranges corresponding simulating supplemental characteristic series that described analog basis data are required simulation and median uniformly-spaced;
Described injection ion distribution analog basis curve number is consistent with the number that the ion distribution curve is injected in actual measurement; The analog parameter of described extraction is two standardization Pearson function I
Amorphous state(u, R
Pa, σ
a, γ
a, β
a) and I
Channeling effect(u, R
Pc, σ
c, γ
c, β
c) various moment parameter of heterogeneity of the injection ion distribution that embodies; Described amorphous state composition dose value accounts for the ratio of full dose value and determines according to the analog basis data.
Compared with prior art, the present invention has the following advantages:
1. by the ion implantation process of simulation, obtain the ion injection parameter analog basis data consistent, increased the reliability of analog basis data with sims analysis via the ion injection profile of sims analysis.
2. adopt the series analog data of interpolation method acquisition ion injection parameter, increased the accuracy of analogue data.
To in the ion implantation process each moment parameter simulation increased the accuracy of ion implantation process simulation.
4. utilize the inventive method obtain ion implantation dosage and energy to inject that ion distributes in semi-conducting material influence rule, ion implantation technology control window can be provided, optimize the ion implantation technology design.
5. utilize interpolation method to form ion injection parameter matrix, ion implantation process so as to simulation different ions injection profile, obtain the injection ion distribution serial curve of different ions injection profile, reduced the time of dry run, improved the efficient of technological design and production run.
6. utilize ion injection parameter chess matrix analogue ion implantation process, reduced the number of the product that needs actual measurement SIMS, reduced R﹠D costs.
7. in case of necessity, the alternative SIMS of this simulation ion implantation process detects, and obtains ion injection parameter data.
Description of drawings
Fig. 1 is the schematic flow sheet of explanation first embodiment of the invention;
Fig. 2 injects distribution curve contrast schematic diagram for the simulation ion injection distribution curve of explanation first embodiment of the invention with the actual measurement ion;
Fig. 3 is the interpolation method schematic of explanation first embodiment of the invention;
Fig. 4 to Fig. 7 influences the rule schematic diagram for the variation of the ion injection parameter of explanation first embodiment of the invention to what inject that ion distributes in material.
Fig. 8 is the interpolation method schematic of explanation second embodiment of the invention;
Fig. 9 to Figure 11 influences the rule schematic diagram for the variation of the ion injection parameter of explanation second embodiment of the invention to what inject that ion distributes in material.
Wherein:
10: the injection ion distribution curve when ion implantation energy is 70kev;
20: the injection ion distribution curve when ion implantation energy is 100kev;
30: the injection ion distribution curve when ion implantation energy is 160kev;
40: the injection ion distribution curve when ion implantation energy is 0.5kev;
50: the injection ion distribution curve when ion implantation energy is 1.0kev;
60: the injection ion distribution curve when ion implantation energy is 2.0kev;
70: the injection ion distribution curve when ion implantation energy is 3.0kev;
80: the injection ion distribution curve when ion implantation energy is 4.0kev.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Ion injection simulation method provided by the invention comprises: at first, the ion distribution curve is injected in the actual measurement that obtains the different ions injection profile; Then, utilize the TCAD instrument, set analog function, the described injection ion distribution of match curve obtains injecting ion distribution analog basis curve, and obtains the analog basis data; From analog basis extracting data analog parameter basic data, utilize interpolation method to obtain the analog parameter DS, form ion injection parameter matrix; At last, utilize ion injection parameter matrix, simulation different ions injection process obtains to inject the ion distribution serial curve.
Fig. 1 is the schematic flow sheet of explanation first embodiment of the invention, and as shown in Figure 1, the concrete implementation step of the inventive method is:
Step 11: according to the scope of the injection ion distribution curve of required simulation, choose the wafer that injects ion, obtain ion and inject the measured data that distributes, obtain the injection ion distribution curve of different ions injection profile, inject the ion distribution curve in order to the calibrated analog basis.
Described actual measurement is injected the ion distribution curve and is obtained via sims analysis or AES analysis.
The number and the choosing according to simulation requirement, process conditions and product requirement of parameter of the described ion injection profile of analyzing via SIMS or AES are determined; The number that the ion distribution curve is injected in the described actual measurement that obtains via SIMS or AES analysis is less than required simulation and injects ion distribution curve number.
In the present embodiment, described injection ion is the element ion In of IIIA family
3+The dose value that described ion injects is elected 1E13/cm as
2With 4E13/cm
2, to inject the inclination angle and elect 15 ° and 30 ° as, energy range is 70～160kev; To each dose value, choose and inject the ion injection profile that energy is respectively 70kev, 100kev and 160kev and carry out sims analysis, promptly select the ion injection profile of the boundary value of injection ion distribution curve ranges of required simulation and median representative to carry out SIMS or AES analyzes, obtain ion and inject the measured data that distributes, obtain the injection ion distribution curve of different ions injection profile.
Really, the selected scope of kind scope, dose value and the energy value of injection ion is not subjected to the qualification of above-mentioned specific embodiment.
Step 12: utilize the TCAD instrument, set analog function, the described injection ion distribution of match curve obtains injecting ion distribution analog basis curve, and obtains the analog basis data.
The method that the ion distribution curve is injected in described match is Monte Carlo (Monte-Carlo) method, promptly by described analog function, produces the ion with certain probability distribution and injects the random parameter sequence, and then obtain analogue data series.
It is consistent with the number of analyzing the injection ion distribution curve that obtains via SIMS or AES that ion distribution curve number is injected in described simulation.
Described analog function is selected Dual Pearson function for use; Described Dual Pearson function has two standardization Pearson functions representing amorphous state composition and channeling effect composition; Described standardization Pearson function reflects various moment parameter of heterogeneity of the injection ion distribution of its representative; Described various moment, parameter comprised that ion walks apart from u, the R of drop shadow spread
p, standard deviation, degree of skewness γ and kurtosis β etc.; Described Dual Pearson function according to dosage forms than linear combination via two standardization Pearson functions.
Described Dual Pearson function, shape as:
I (u)=r worker
Amorphous state(u, R
Pa, σ
a, γ
a, β
aThe I of)+(1-r)
Channeling effect(u, R
Pc, σ
c, γ
c, β
c)
Wherein,
R: amorphous state composition dose value accounts for the ratio of full dose value;
U: inject ion and in material, walk distance;
R
p: the drop shadow spread of injecting ion distribution;
σ: the standard deviation that injects ion distribution;
γ: the degree of skewness of injecting ion distribution;
β: the kurtosis of injecting ion distribution.
Fig. 2 is that the simulation ion of explanation first embodiment of the invention injects distribution curve and actual measurement ion injection distribution curve contrast schematic diagram, as shown in Figure 2, is 4E13/cm to have implantation dosage
2Injecting the inclination angle is 30 °, injecting energy is that the isoparametric ion injection profile of 100kev is an example, behind sims analysis acquisition ion injection distribution curve, use described analog function match and inject the ion distribution curve, obtain injecting ion distribution analog basis curve, enumerating two ions injection distribution curves can find out, fitting effect is good, and the analog basis data of acquisition possess reliability.
Step 13: from analog basis extracting data analog parameter basic data, utilize interpolation method to obtain the analog parameter DS, form ion injection parameter matrix.
The analog parameter of described extraction is the various moment parameter in the ion implantation process that comprises of described two standardization Pearson functions representing amorphous state composition and channeling effect composition respectively.
Fig. 3 is the interpolation method schematic of explanation first embodiment of the invention, as shown in Figure 3, between two adjacent groups analog basis data, utilize interpolation method to obtain the analogue data series of identical parameters, be denoted as " v " part in the table and be the analog basis data, be denoted as " o " part and be the interpolation analogue data.In the present embodiment, be 3 as the number of the analog basis data set of interpolative data benchmark, the analog basis data are the boundary value and the median of the injection ion distribution curve ranges corresponding simulating supplemental characteristic of required simulation.
Step 14: set the ratio that amorphous state composition dose value or channeling effect composition dose value account for full dose value, utilize ion injection parameter matrix, according to analog function, the ion implantation process of simulation different ions injection profile obtains to inject the ion distribution serial curve.
Described amorphous state composition dose value or channeling effect composition dose value are determined according to the analog basis data with the ratio of full dose value.
Fig. 4 to Fig. 7 influences the rule schematic diagram for the variation of the ion injection parameter of explanation first embodiment of the invention to what inject that ion distributes in material.It is extremely shown in Figure 7 as Fig. 4 to inject ion distribution analog basis curve 10,20,30.The implantation dosage of Fig. 4 correspondence is 1E13/cm
2, the inclination angle is 15 °; The implantation dosage of Fig. 5 correspondence is 1E13/cm
2, the inclination angle is 30 °; The implantation dosage of Fig. 6 correspondence is 4E13/cm
2, the inclination angle is 15 °; The implantation dosage of Fig. 7 correspondence is 4E13/cm
2, the inclination angle is 30 °; Described ion injects the inclination angle and determines according to product requirement and process conditions.
The variation that can draw the ion injection parameter by described injection ion distribution serial curve is to injecting the rule that influences that ion distributes in material.
Extremely shown in Figure 7 as Fig. 4, when ion implantation dosage and inclination angle are identical, with the rising of ion implantation energy, the range that injects ion increases, and injects the probability increase that ion arrives the injection material depth areas, simultaneously, short-range injection ion distribution probability reduces, and the peak value that promptly injects ion distribution reduces.
The injection ion distribution curve that corresponding injection energy value is identical among comparison diagram 4 and Fig. 6 or Fig. 5 and Fig. 7 can draw, when ion implantation energy and inclination angle are identical,, inject the probability increase that ion arrives depth areas with the rising of ion implantation dosage, simultaneously, the peak value of injection ion distribution also increases.
Comparison diagram 4 and Fig. 5 or Fig. 6 and Fig. 7 can find out, when ion implantation energy and dosage are identical, inject the inclination angle and change injecting the influence of ion distribution.
As second embodiment of the inventive method, injecting ion is the element ion As of V A family
3-The dose value that described ion injects is elected 1E13/cm as
2, 1E14/cm
2With 1E15/cm
2, energy range is 0.5～4.0kev; To each dose value, the ion injection profile of choosing different ions injection energy at interval carries out SIMS or AES analysis, and utilizes the TCAD instrument, sets analog function by the described method of first embodiment, the described injection ion distribution of match curve obtains the analog basis data.
Really, the selected scope of kind scope, dose value and the energy value of injection ion is not subjected to the qualification of above-mentioned specific embodiment.
Fig. 8 is the interpolation method schematic of explanation second embodiment of the invention, as shown in Figure 8, between two adjacent groups analog basis data, utilize interpolation method to obtain the analogue data series of identical parameters, be denoted as " v " part in the table and be the analog basis data, be denoted as the analogue data of " o " part for inserting.In the present embodiment, be 5 as the number of the analog basis data set of interpolative data benchmark, the analog basis data are 2 boundary values and 3 equidistant medians of the injection ion distribution curve ranges corresponding simulating supplemental characteristic of required simulation.Cross when low when ion implantation energy, described SIMS test needs through multiple authentication.
Fig. 9 to Figure 11 influences the rule schematic diagram for the variation of the ion injection parameter of explanation second embodiment of the invention to what inject that ion distributes in material.It is extremely shown in Figure 11 as Fig. 9 to inject ion distribution analog basis curve 40,50,60,70,80.The implantation dosage of Fig. 9 correspondence is 1E13/cm; The implantation dosage of Figure 10 correspondence is 1E14/cm
2The implantation dosage of Figure 11 correspondence is 1E15/cm
2Extremely shown in Figure 11 as Fig. 9, when ion implantation dosage is identical, with the rising of ion implantation energy, the range that injects ion increases, and injects the probability increase that ion arrives depth areas, simultaneously, short-range injection ion distribution probability reduces, and the peak value that promptly injects ion distribution reduces.
The corresponding identical injection ion distribution curve of energy value that injects can draw in the comparison diagram 9 to Figure 11, when ion implantation energy is identical,, inject the probability increase that ion arrives depth areas with the rising of ion implantation dosage, simultaneously, the peak value of injection ion distribution also increases.
Use the inventive method, utilize interpolation method to form ion injection parameter matrix; And then simulation different ions injection process, obtain to inject the ion distribution serial curve, obtain ion implantation dosage and energy to inject that ion distributes in material influence rule, ion implantation technology control window can be provided, optimize the ion implantation technology design; Simultaneously, reduce the time of dry run, improved the efficient of technological design and production run, reduced R﹠D costs.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (8)
1. an ion injection simulation method is characterized in that, comprising:
A. the ion distribution curve is injected in the actual measurement that obtains the different ions injection profile;
B. utilize the process computer design aids, set two Pearson's function I (u)=rI
Amorphous state(u, R
Pa, σ
a, γ
a, β
aThe I of)+(1-r)
Channeling effect(u, R
Pc, σ
c, γ
c, β
c), adopt the described injection ion distribution of monte carlo method match curve, obtain injecting ion distribution analog basis curve, and obtain the analog basis data, r is the ratio that amorphous state composition dose value accounts for full dose value; Ion is walked apart from u, the R of drop shadow spread
p, standard deviation, degree of skewness γ and kurtosis β be the moment parameter;
C. from analog basis extracting data analog parameter basic data, utilize interpolation method, obtain the analog parameter DS, form ion injection parameter matrix;
D. utilize ion injection parameter matrix, simulation different ions injection process obtains to inject the ion distribution serial curve.
2. ion injection simulation method according to claim 1 is characterized in that: described actual measurement is injected the ion distribution curve and is obtained via secondary ion mass spectroscopy analysis or the analysis of Ou Jie electronic spectrum.
3. ion injection simulation method according to claim 2 is characterized in that: described number and choosing according to simulation requirement, process conditions and product requirement of parameter via the ion injection profile of surveying determined.
4. ion injection simulation method according to claim 3 is characterized in that: the number that the ion distribution curve is injected in described actual measurement is less than required simulation injection ion distribution curve number.
5. ion injection simulation method according to claim 1 is characterized in that: the analog basis data are the boundary value and the median uniformly-spaced of the injection ion distribution curve ranges corresponding simulating supplemental characteristic series of required simulation.
6. ion injection simulation method according to claim 1 is characterized in that: described injection ion distribution analog basis curve number is consistent with the number that the ion distribution curve is injected in actual measurement.
7. ion injection simulation method according to claim 1 is characterized in that: the described analog parameter of extraction is two standardization Pearson function I
Amorphous state(u, R
Pa, σ
a, γ
a, β
a) and I
Channeling effect(u, R
Pc, σ
c, γ
c, β
c) various moment parameter of heterogeneity of the injection ion distribution that embodies.
8. ion injection simulation method according to claim 1 is characterized in that: described amorphous state composition dose value accounts for the ratio of full dose value and determines according to the analog basis data.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104237279B (en) * | 2013-06-09 | 2017-07-11 | 中芯国际集成电路制造(上海)有限公司 | Away from the computational methods and SIMS analysis method of rate |
| CN103927415B (en) * | 2014-04-08 | 2017-07-11 | 上海华力微电子有限公司 | The calibration method of ion implantation concentration |
| KR102525873B1 (en) * | 2015-10-16 | 2023-04-27 | 삼성전자주식회사 | Semiconductor process simulation device and simulation method thereof |
| CN105867338B (en) * | 2016-05-25 | 2018-08-14 | 上海华力微电子有限公司 | A kind of the intelligent art interlock control method and system of ion implantation apparatus |
| CN108517559B (en) * | 2018-03-07 | 2020-12-29 | 电子科技大学 | Method for auxiliary control of ion implantation time based on Monte Carlo simulation |
| CN109753709B (en) * | 2018-12-27 | 2024-04-26 | 苏州珂晶达电子有限公司 | Parameter extraction method of ion implantation model |
| CN111293040A (en) * | 2020-02-20 | 2020-06-16 | 全球能源互联网研究院有限公司 | Method for improving accuracy of n-type doped ion implantation |
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