EP0809254A1 - Zeilendekodierer für Speicher - Google Patents

Zeilendekodierer für Speicher Download PDF

Info

Publication number
EP0809254A1
EP0809254A1 EP96830299A EP96830299A EP0809254A1 EP 0809254 A1 EP0809254 A1 EP 0809254A1 EP 96830299 A EP96830299 A EP 96830299A EP 96830299 A EP96830299 A EP 96830299A EP 0809254 A1 EP0809254 A1 EP 0809254A1
Authority
EP
European Patent Office
Prior art keywords
circuit
decoder
predecoding
line
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96830299A
Other languages
English (en)
French (fr)
Other versions
EP0809254B1 (de
Inventor
Giovanni Campardo
Rino Micheloni
Stefano Commodaro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, SGS Thomson Microelectronics SRL filed Critical STMicroelectronics SRL
Priority to EP96830299A priority Critical patent/EP0809254B1/de
Priority to DE69630363T priority patent/DE69630363D1/de
Priority to US08/862,563 priority patent/US6018255A/en
Publication of EP0809254A1 publication Critical patent/EP0809254A1/de
Priority to US09/432,642 priority patent/US6094073A/en
Application granted granted Critical
Publication of EP0809254B1 publication Critical patent/EP0809254B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Definitions

  • row decoders provide for addressing individual rows in a memory array according to the coded address with which they are supplied.
  • the basic scheme of row decoders may be represented by a number of inverters (one for each row) controlled by a combinatorial circuit, which receives the input addresses and drives the inverters so that only one of them at a time presents a high output.
  • the combinatorial circuit provides for supplying a low logic signal to the inverter connected to the selected row (so that the inverter presents a high output) and a high logic signal to all the others.
  • Figure 1 shows an inverter 1 comprising a PMOS pull-up transistor 2 and an NMOS pull-down transistor 3 with the gate terminals connected to each other (node 4), the drain terminals connected to each other (output node 5), and the source terminals connected respectively to supply line 6 and ground.
  • the feedback transistor is turned on and connects node 4 to the programming voltage V pp of line 6, thus ensuring complete turn-off of pull-up transistor 2 and a zero output voltage.
  • FIG. 2 Such a solution is shown in Figure 2 wherein a three-input NAND gate 10, supplied at read voltage V cc and forming part of the combinatorial circuit for selecting the row, drives inverter 1 via an NMOS pass transistor 13 with the gate terminal biased at V cc ; and output node 5 is connected to the gate terminal of a PMOS feedback transistor 11 with the source terminal connected to line 6 and the drain terminal connected to node 4.
  • a three-input NAND gate 10 supplied at read voltage V cc and forming part of the combinatorial circuit for selecting the row, drives inverter 1 via an NMOS pass transistor 13 with the gate terminal biased at V cc ; and output node 5 is connected to the gate terminal of a PMOS feedback transistor 11 with the source terminal connected to line 6 and the drain terminal connected to node 4.
  • pass transistor 13 when the output of NAND gate 10 is high (V cc ), pass transistor 13 operates as a diode by presenting two terminals (the gate terminal and the terminal connected to the output of NAND gate 10) at the same voltage, and therefore causes, between the output of NAND gate 10 and node 4, a voltage drop equal to its threshold voltage.
  • the line decoder when the line decoder is a row decoder, it comprises a predecoding stage supplied with row addresses and generating predecoding signals; and an actual (final) decoding stage, which, on the basis of the predecoding signals, provides for driving the individual rows in the array.
  • the high (programming) voltage is supplied not only to the final decoding stage but also to the predecoding stage, for which purpose, the predecoding stage presents two parallel paths, one supplied with low voltage and used in read mode, and the other supplied with high voltage and used in programming mode.
  • a CMOS switch separates the two paths, is driven by the high voltage already available in the predecoding stage, and, being formed at predecoding level, involves none of the integration problems posed by the final decoding stage.
  • the line decoder is a column decoder comprising a single decoding stage corresponding to the predecoding stage of the row decoder, it comprises two separate paths supplied respectively with low and high voltage, and selectively enabled by a CMOS switch.
  • the low-voltage path (used in read mode) may be so designed as to ensure highly fast address times with no need for appropriate voltage shift structures, and the high-voltage path for effecting the voltage shift required for programming.
  • Predecoding stage 203 comprises a number of predecoding circuits 15 identical to one another but receiving different combinations of straight or inverted address signals; and, similarly, final decoding stage 204 comprises a number of final decoding circuits 70 identical to one another but receiving different combinations of signals lx, ly, lz and p.
  • Figure 4 shows circuit 15 generating a signal p ⁇ 7 ⁇ on the basis of addresses a ⁇ 8 ⁇ , a ⁇ 9 ⁇ and a ⁇ 10 ⁇ .
  • Circuit 15 comprises three input nodes 16-18 receiving respective row addresses a ⁇ 8 ⁇ , a ⁇ 9 ⁇ and a ⁇ 10 ⁇ ; an input node 19 receiving an inverted erase enabling signal En; an input node 21 receiving a TEST signal; an input node 20 receiving a program enabling signal PGR; a first low-voltage supply line 22 at V cc (e.g. between 3 and 5 V); a second supply line 23 at voltage VPC, which, in read mode, equals V cc , and, in programming mode, is at high programming voltage V pp (e.g. 12 V); and an output node 24 supplying predecoding signal p ⁇ 7 ⁇ .
  • V cc e.g. between 3 and 5 V
  • VPC high programming voltage
  • V pp e.g. 12 V
  • Path 30 substantially comprising a connecting line, is a low-voltage path used in read mode for grounding or supplying voltage V cc to node 29 according to the requirements; and path 31, substantially comprising a voltage shifter, is a high-voltage path connected to second supply line 23 via switch 33, and used in programming mode (when required) to supply high voltage V pp to node 29.
  • Input branch 26 comprises a NAND gate 36 with four inputs connected to input nodes 16-19 of circuit 15; an inverter 37 connected to the output of NAND gate 36; and a NOR gate 38 with an input connected to the output of inverter 37, an input connected to input 21 of circuit 15, and an output defining node 27.
  • Output branch 28 comprises a PMOS transistor 40 and two NMOS transistors 41, 42 connected in series between second supply line 23 and ground. More specifically, transistor 40 has the gate terminal connected to node 29, the source terminal connected to line 23, and the drain terminal connected to output node 24; transistor 41 has the drain terminal connected to output node 24, the gate terminal connected to first supply line 22, and the source terminal connected to the drain terminal of transistor 42; and transistor 42 has the gate terminal connected to node 29, and the source terminal grounded.
  • Control stage 34 comprises a NOR gate 43 with two inputs connected to input nodes 20, 21, and an output defining a node 44; a voltage shifter 45; and a PMOS transistor 46 operating as a switch for enabling shifter 45. More specifically, transistor 46 has the source terminal connected to second supply line 23, the gate terminal connected to node 44, and the drain terminal connected to a node 47 of shifter 45; shifter 45 comprises two PMOS transistors 48, 49, and four NMOS transistors 50-53; transistor 48 has the source terminal connected to node 47, the gate terminal connected to the drain terminal of transistor 49, and the drain terminal connected to a node 54; transistor 50 has the drain terminal connected to node 54, the gate terminal connected to first supply line 22, and the source terminal connected to the drain terminal of transistor 52; transistor 52 has the gate terminal connected to node 44, and the source terminal grounded; transistor 49 has the source terminal connected to node 47, the gate terminal connected to node 54, and the drain terminal connected to the drain terminal of transistor 51; transistor 51 has the gate terminal connected to first supply
  • CMOS switch 32 comprises a PMOS transistor 58 and an NMOS transistor 59 having the source terminals connected to each other and to node 27, the drain terminals connected to each other and to node 29 over path (line) 30, and the gate terminals connected respectively to node 54 and node 44.
  • the bulk of PMOS transistor 58 is connected to second supply line 23; and the bulk of NMOS transistor 59 is grounded.
  • Switch 33 comprises a PMOS transistor with the source terminal connected to second supply line 23, the gate terminal connected to node 44, and the drain terminal connected to a node 60 of second path 31, which comprises a shifter 61, similar to shifter 45, and a NOR gate 62.
  • shifter 61 comprises two PMOS transistors 63, 64, and four NMOS transistors 65-68; transistor 63 has the source terminal connected to node 60, the gate terminal connected to node 29, and the drain terminal connected to the drain terminal of transistor 65; transistor 65 has the gate terminal connected to first supply line 22, and the source terminal connected to the drain terminal of transistor 67; transistor 67 has the gate terminal connected to node 27, and the source terminal grounded; transistor 64 has the source terminal connected to node 60, the gate terminal connected to the drain terminal of transistor 63, and the drain terminal connected to node 29; transistor 66 has the drain terminal connected to node 29, the gate terminal connected to first supply line 22, and the source terminal connected to the drain terminal of transistor 68; transistor 68 has the gate terminal connected to the output of NOR gate 62, and the source terminal grounded; and NOR gate 62 has one input connected to node 27, and one input connected to node 44.
  • Circuit 15 in Figure 4 operates as follows. Inverted erase enabling signal En is always high except in erase mode, and the TEST signal is always low except in test mode.
  • signal PGR is low, so that node 44 is high, disables switches 33 and 46 (high-voltage path 31 off and shifters 45, 61 supplied solely by first supply line 22), and enables switch 32, so that a high logic signal (at voltage V cc ) is supplied to the gate terminal of transistor 59, and a low signal is supplied to the gate terminal of transistor 58, by virtue of transistors 52, 50 being turned on and maintaining node 54 grounded.
  • Switch 32 is therefore closed with no voltage drop at its terminals, so that, if the address signals at input nodes 16-18 are all high, the output of NAND gate 36 and node 27 are low, transistor 42 is turned off, as is transistor 41 which has a floating terminal, transistor 40 is turned on, node 24 is connected directly to second supply line 23 at VPC, and signal p ⁇ 7 ⁇ is high and equals V cc (being in read mode). Conversely, if even only one of the address signals is low, transistors 42, 41 are turned on and ground node 24, and signal p ⁇ 7 ⁇ is low.
  • signal PGR is high; node 44 is grounded and drives transistors 33, 46 to enable voltage shifters 45, 61; voltage VPC of second supply line 23 is high (equal to V pp ) so that nodes 47, 60 are connected to the high voltage; the low signal at node 44 keeps transistor 52 and transistor 50 (which has a floating source terminal) turned off; the output of inverter 55 is high and so keeps transistor 53 turned on; transistors 51, 48 are therefore also turned on; node 54 is high, at voltage V pp ; CMOS switch 32, receiving a low signal at the NMOS transistor 59 side and a high-voltage signal (at V pp ) at the PMOS transistor 58 side, is definitely turned off, even in the presence of a high signal (at V pp ) at node 29, thus definitely ensuring low-voltage path 30 is disabled; and connection of the bulk of transistor 58 to VPC (i.e. V pp ) prevents undesired direct biasing between the various regions of transistor 58.
  • VPC voltage
  • CMOS switch 32 In erase mode (signals En, TEST and PGR low), in all the circuits 15 receiving a low enabling signal En, CMOS switch 32 is closed; the output of NAND gate 36 and node 29 are high; and signals p ⁇ 0 ⁇ -p ⁇ 7 ⁇ , lx, ly, lz are low.
  • Figure 5 shows a final decoding circuit 70 for generating row biasing signals R ⁇ 0 ⁇ -R ⁇ 7 ⁇ on the basis of signals lx, ly, lz and p ⁇ 0 ⁇ to p ⁇ 7 ⁇ (the drive circuits generating signals R ⁇ 4 ⁇ -R ⁇ 7 ⁇ are not shown).
  • Circuit 70 connected between second supply line 23 at VPC and ground, comprises an input stage 71 receiving signals lx, ly, lz and supplying an enabling signal C for enabling eight identical drive circuits 72, of which only four are shown.
  • Input stage 71 substantially comprises a NAND gate 73 and an inverter 74.
  • NAND gate 73 comprises three PMOS transistors 75-77 and three NMOS transistors 83-85; transistors 75-77 have the source terminals connected to second supply line 23, the drain terminals connected to a node 78, and the gate terminals connected to respective inputs 79, 80, 81 receiving signals lz, ly, lz; and transistors 83-85 are connected in series between node 78 and ground, and have the gate terminals connected to respective inputs 79-81.
  • Inverter 74 comprises a PMOS transistor 87 with the source terminal connected to second supply line 23, the gate terminal connected to node 78, and the drain terminal connected to a node 88 presenting signal C; and an NMOS transistor 89 with the drain terminal connected to node 88, the gate terminal connected to node 78, and the source terminal grounded.
  • Each drive circuit 72 comprises a PMOS disabling transistor 90, a first inverter 92, and a second inverter 93, and an NMOS enabling transistor 91 drives a number of drive circuits 72.
  • Each PMOS disabling transistor 90 has the source terminal connected to second supply line 23, the gate terminal connected to node 88, and the drain terminal connected to a respective node 95;
  • NMOS enabling transistor 91 has the drain terminal connected to a common node 96, the gate terminal connected to node 88, and the source terminal grounded;
  • each first inverter 92 comprises a PMOS transistor 97 and an NMOS transistor 99;
  • each transistor 97 has the source terminal connected to second supply line 23, the gate terminal connected to a respective input node 98 receiving a respective signal p, and the drain terminal connected to respective node 95, which therefore defines the output of respective inverter 92;
  • each NMOS transistor 99 has the drain terminal connected to respective node 95, the gate terminal connected to respective input 98, and the
  • Circuit 70 in Figure 5 operates as follows. When all three signals lx, ly, lz are high, NMOS transistors 83-85 are turned on, PMOS transistors 75-77 are turned off, node 78 is low, and signal C at node 88 is high (at voltage VPC). Conversely, if even only one of signals lx, ly, lz is low, the corresponding NMOS transistor is turned off, the corresponding PMOS transistor is turned on, node 78 is connected to second supply line 23, and signal C is low (grounded).
  • signals lx, ly, lz, p ⁇ 0 ⁇ -p ⁇ 7 ⁇ are all low, so that nodes 95 are all high; and NMOS transistors 102 of pull-down inverters 93 are turned on and transfer the high negative voltage -V E at inputs 103 to the rows in the array.
  • transistors 102 are formed using the triple-well technology shown in Figure 6.
  • a P-type substrate 110 houses an N-well 111 in turn housing a P-well 112 defining the bulk of transistor 102; and well 112 houses the N + type regions 113, 114 defining the source and drain regions of transistor 102, and is anchored electrically to source region 113.
  • Figure 6 also shows the gate region 115 of transistor 102; an N + well 116 contacting the bulk; and a P + well 117 contacting well 111, which is biased at voltage V cc , so that, when source region 113 of transistor 102 is biased at erase voltage -V E , well 112 is also biased at the same negative voltage, and no voltage drop occurs at junction 112-113.
  • junctions 112-114, 111-112 and 110-111 are reverse biased and therefore pose no problems.
  • the advantages of the circuit described are as follows. In particular, it operates correctly even at low voltage, by featuring no NMOS pass transistors or other components involving a voltage drop at the terminals. It ensures correct output readings, and prevents stressing the cells connected to the nonselected rows, by featuring supply branches ensuring the components along the transmission paths of the row drive signals are turned off or on completely.
  • the formation of a high-voltage path in the predecoding circuit enables the use of a CMOS pass switch, which, despite presenting no voltage drop, requires a high-voltage drive circuit for it to operate correctly, and is too bulky to be accommodated in the final decoding circuit, the components of which are formed within the spacing between the array rows and must therefore be small in size.
  • the layout of the decoder according to the invention is simplified by requiring no feedback branches.
  • the low-voltage path may be extremely simple (merely a connecting line) to greatly reduce access time, and the high-voltage path may be optimized using voltage shifters, which in themselves introduce a slight delay in signal propagation, at no expense in terms of read performance.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
EP96830299A 1996-05-24 1996-05-24 Zeilendekodierer für Speicher Expired - Lifetime EP0809254B1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP96830299A EP0809254B1 (de) 1996-05-24 1996-05-24 Zeilendekodierer für Speicher
DE69630363T DE69630363D1 (de) 1996-05-24 1996-05-24 Zeilendekodierer für Speicher
US08/862,563 US6018255A (en) 1996-05-24 1997-05-23 Line decoder for memory devices
US09/432,642 US6094073A (en) 1996-05-24 1999-11-02 Line decoder for memory devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830299A EP0809254B1 (de) 1996-05-24 1996-05-24 Zeilendekodierer für Speicher

Publications (2)

Publication Number Publication Date
EP0809254A1 true EP0809254A1 (de) 1997-11-26
EP0809254B1 EP0809254B1 (de) 2003-10-15

Family

ID=8225916

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96830299A Expired - Lifetime EP0809254B1 (de) 1996-05-24 1996-05-24 Zeilendekodierer für Speicher

Country Status (3)

Country Link
US (2) US6018255A (de)
EP (1) EP0809254B1 (de)
DE (1) DE69630363D1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1058271A1 (de) * 1999-06-04 2000-12-06 STMicroelectronics S.r.l. CMOS Schalter zum Übertragen von hohen Spannungen, insbesondere für Zeilendekodierer in nichtflüchtigen Speichern mit geringem Verbrauch während des Schaltens

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6618316B2 (en) * 2001-12-20 2003-09-09 Intel Corporation Pseudo-static single-ended cache cell
JP4709525B2 (ja) * 2004-10-14 2011-06-22 株式会社東芝 不揮発性半導体記憶装置
EP2302794A1 (de) * 2009-09-18 2011-03-30 STMicroelectronics Srl Pegelumsetzer für Hochspannungsvorgänge
US9196330B2 (en) 2012-01-17 2015-11-24 Qualcomm Incorporated Mimicking multi-voltage domain wordline decoding logic for a memory array
US9466347B1 (en) * 2015-12-16 2016-10-11 Stmicroelectronics International N.V. Row decoder for non-volatile memory devices and related methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127642A (en) * 1982-09-17 1984-04-11 Nec Corp Programmable memory circuit
US4642798A (en) * 1985-10-01 1987-02-10 Intel Corporation CMOS E2 PROM decoding circuit
US4694430A (en) * 1985-03-21 1987-09-15 Sprague Electric Company Logic controlled switch to alternate voltage sources
US4791612A (en) * 1985-12-18 1988-12-13 Fujitsu Limited Data programming circuit for programmable read only memory device
US4893275A (en) * 1987-03-31 1990-01-09 Kabushiki Kaisha Toshiba High voltage switching circuit in a nonvolatile memory

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3934303C2 (de) * 1988-10-15 2001-01-25 Sony Corp Adreßdecoder für nichtflüchtige Speicher
JP3036910B2 (ja) * 1991-08-20 2000-04-24 沖電気工業株式会社 Ｃｍｏｓデコード回路
US6005414A (en) * 1997-06-03 1999-12-21 Linear Technology Corporation Mixed-mode multi-protocol serial interface driver
US5926034A (en) * 1997-08-14 1999-07-20 Micron Technology, Inc. Fuse option for multiple logic families on the same die
JPH1188146A (ja) * 1997-09-04 1999-03-30 Fujitsu Ltd レベルインターフェース回路
KR100297707B1 (ko) * 1997-10-13 2001-08-07 윤종용 반도체메모리장치의입력버퍼

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127642A (en) * 1982-09-17 1984-04-11 Nec Corp Programmable memory circuit
US4694430A (en) * 1985-03-21 1987-09-15 Sprague Electric Company Logic controlled switch to alternate voltage sources
US4642798A (en) * 1985-10-01 1987-02-10 Intel Corporation CMOS E2 PROM decoding circuit
US4791612A (en) * 1985-12-18 1988-12-13 Fujitsu Limited Data programming circuit for programmable read only memory device
US4893275A (en) * 1987-03-31 1990-01-09 Kabushiki Kaisha Toshiba High voltage switching circuit in a nonvolatile memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1058271A1 (de) * 1999-06-04 2000-12-06 STMicroelectronics S.r.l. CMOS Schalter zum Übertragen von hohen Spannungen, insbesondere für Zeilendekodierer in nichtflüchtigen Speichern mit geringem Verbrauch während des Schaltens
US6433583B1 (en) 1999-06-04 2002-08-13 Stmicroelectronics S.R.L. CMOS switch circuit for transferring high voltages, in particular for line decoding in nonvolatile memories, with reduced consumption during switching

Also Published As

Publication number Publication date
EP0809254B1 (de) 2003-10-15
US6094073A (en) 2000-07-25
US6018255A (en) 2000-01-25
DE69630363D1 (de) 2003-11-20

Similar Documents

Publication Publication Date Title
US6144582A (en) Nonvolatile semiconductor memory device
US5157280A (en) Switch for selectively coupling a power supply to a power bus
US5399928A (en) Negative voltage generator for flash EPROM design
US6141291A (en) Semiconductor memory device
US9972394B2 (en) Level shifter circuit and associated memory device
US20070170958A1 (en) High voltage driver circuit with fast slow voltage operation
US9449666B2 (en) Local word line driver
US5513147A (en) Row driving circuit for memory devices
EP0920023B1 (de) Zeilendekodierer für Flash-EEPROM-Speicheranordnung mit der Möglichkeit einer wahlweisen Löschung einer Untergruppe von Zeilen eines Sektors
US5446700A (en) Decoder circuit having CMOS inverter circuits
US6018255A (en) Line decoder for memory devices
US5959902A (en) Voltage level shifter device, particulary for a nonvolatile memory
US6049498A (en) Double transistor switch for supplying multiple voltages to flash memory wordlines
US7161841B1 (en) Method for erasing programmable interconnect cells for field programmable gate arrays using reverse bias voltage
KR20180012910A (ko) Otp 메모리 장치
KR100415472B1 (ko) 반도체 회로
JPH07321293A (ja) 電源選択回路
KR20010092074A (ko) 고전압 워드 라인 드라이버 회로를 구비한 반도체 메모리장치
US7768335B2 (en) Voltage level shifter circuit
EP0700598B1 (de) Generator für negative Spannungen für Flash-EPROMS
US7260014B1 (en) Voltage supply circuit for memory array programming
US6362658B1 (en) Decoder for memories having optimized configuration
KR100213215B1 (ko) 반도체 메모리 장치의 서브 워드라인 드라이버 제어 신호 발생 회로
JPH011193A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB IT

17P Request for examination filed

Effective date: 19980218

K1C3 Correction of patent application (complete document) published

Effective date: 19971126

RAP3 Party data changed (applicant data changed or rights of an application transferred)

Owner name: STMICROELECTRONICS S.R.L.

17Q First examination report despatched

Effective date: 20020318

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20031015

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REF Corresponds to:

Ref document number: 69630363

Country of ref document: DE

Date of ref document: 20031120

Kind code of ref document: P

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040116

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20040716

EN Fr: translation not filed
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20050524

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20080424

Year of fee payment: 13

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20090524

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20090524