EP0798775A3 - Semiconductor wafer chucking device and method for removing semiconductor wafer - Google Patents

Semiconductor wafer chucking device and method for removing semiconductor wafer Download PDF

Info

Publication number
EP0798775A3
EP0798775A3 EP97105047A EP97105047A EP0798775A3 EP 0798775 A3 EP0798775 A3 EP 0798775A3 EP 97105047 A EP97105047 A EP 97105047A EP 97105047 A EP97105047 A EP 97105047A EP 0798775 A3 EP0798775 A3 EP 0798775A3
Authority
EP
European Patent Office
Prior art keywords
wafer
semiconductor wafer
platform
wafer platform
chucking device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97105047A
Other languages
German (de)
French (fr)
Other versions
EP0798775A2 (en
Inventor
Hideo Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0798775A2 publication Critical patent/EP0798775A2/en
Publication of EP0798775A3 publication Critical patent/EP0798775A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Abstract

After water chucking, part of an outer peripheral portion of the wafer (2) remains electrostatically absorbed on the wafer platform (1) located in the vacuum vessel (8). In order to remove the part of the outer peripheral portion of the wafer (2) from the wafer platform (1) using a half-lifting lift pin (4), a UV ray applying unit (6) is operated to feed ionized inert gas between the wafer (2) and the wafer platform (1) in order to neutralize the charges distributed on the rear surface of the wafer (2) and the top surface of the wafer platform (1), thus reducing the residual absorption, resulting in easy removal of the wafer (2) from the wafer platform (1).
EP97105047A 1996-03-26 1997-03-25 Semiconductor wafer chucking device and method for removing semiconductor wafer Withdrawn EP0798775A3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7033996A JP3163973B2 (en) 1996-03-26 1996-03-26 Semiconductor wafer chuck device and semiconductor wafer peeling method
JP70339/96 1996-03-26
JP7033996 1996-03-26

Publications (2)

Publication Number Publication Date
EP0798775A2 EP0798775A2 (en) 1997-10-01
EP0798775A3 true EP0798775A3 (en) 1999-07-07

Family

ID=13428569

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97105047A Withdrawn EP0798775A3 (en) 1996-03-26 1997-03-25 Semiconductor wafer chucking device and method for removing semiconductor wafer

Country Status (4)

Country Link
US (1) US6174370B1 (en)
EP (1) EP0798775A3 (en)
JP (1) JP3163973B2 (en)
KR (1) KR100298910B1 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT411304B (en) * 1997-06-18 2003-11-25 Sez Ag SUPPORT FOR DISC-SHAPED ITEMS, IN PARTICULAR SILICON WAFER
GB9812850D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd A method and apparatus for dechucking
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6567257B2 (en) * 2000-04-19 2003-05-20 Applied Materials, Inc. Method and apparatus for conditioning an electrostatic chuck
US6364958B1 (en) * 2000-05-24 2002-04-02 Applied Materials, Inc. Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
EP1174910A3 (en) 2000-07-20 2010-01-06 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US6528435B1 (en) * 2000-08-25 2003-03-04 Wafermasters, Inc. Plasma processing
JP4156788B2 (en) * 2000-10-23 2008-09-24 日本碍子株式会社 Susceptor for semiconductor manufacturing equipment
WO2003010828A1 (en) * 2001-07-23 2003-02-06 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing thin-film structure
US6864563B1 (en) * 2002-05-30 2005-03-08 Lsi Logic Corporation Grounding mechanism for semiconductor devices
JP4372443B2 (en) * 2003-04-01 2009-11-25 東京エレクトロン株式会社 Processing apparatus and processing method
US8033245B2 (en) * 2004-02-12 2011-10-11 Applied Materials, Inc. Substrate support bushing
US7597816B2 (en) * 2004-09-03 2009-10-06 Lam Research Corporation Wafer bevel polymer removal
US8270142B2 (en) * 2008-12-10 2012-09-18 Axcelis Technologies, Inc. De-clamping wafers from an electrostatic chuck
JP2010199239A (en) * 2009-02-24 2010-09-09 Tokyo Electron Ltd Discharging method of substrate to be treated and substrate treatment apparatus
US8888086B2 (en) * 2011-05-11 2014-11-18 Sematech, Inc. Apparatus with surface protector to inhibit contamination
JP5807554B2 (en) * 2012-01-19 2015-11-10 旭硝子株式会社 Peeling apparatus and electronic device manufacturing method
JP2014072272A (en) * 2012-09-28 2014-04-21 Toppan Printing Co Ltd Method and device for plasma etching
US9232626B2 (en) 2013-11-04 2016-01-05 Kla-Tencor Corporation Wafer grounding using localized plasma source
JP2018006392A (en) 2016-06-28 2018-01-11 ルネサスエレクトロニクス株式会社 Method of manufacturing semiconductor device
JP6715353B2 (en) 2017-01-30 2020-07-01 株式会社新川 Pickup device and pickup method
KR102322767B1 (en) * 2017-03-10 2021-11-08 삼성디스플레이 주식회사 Substrate treating apparatus providing improved detaching mechanism between the substrate and stage and the substrate treating method using the same
JP6948822B2 (en) 2017-04-25 2021-10-13 東京エレクトロン株式会社 Board processing device and board removal method
KR20210010849A (en) * 2018-04-12 2021-01-28 에이에스엠엘 네델란즈 비.브이. Apparatus comprising electrostatic clamps and methods of operating the apparatus
JP7120833B2 (en) * 2018-07-10 2022-08-17 Ｊｓｗアクティナシステム株式会社 Laser processing equipment
IL283955B1 (en) * 2018-12-20 2024-02-01 Asml Netherlands Bv Object table comprising an electrostatic clamp
JP7265430B2 (en) * 2019-07-02 2023-04-26 株式会社ディスコ processing equipment

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159744A (en) * 1988-12-14 1990-06-19 Fuji Electric Co Ltd Wafer release mechanism of semiconductor wafer chucking device
JPH0451542A (en) * 1990-06-19 1992-02-20 Fujitsu Ltd Electrostatically attracting method
JPH05291194A (en) * 1991-04-15 1993-11-05 Anelva Corp Plasma procassing method and apparatus
US5310453A (en) * 1992-02-13 1994-05-10 Tokyo Electron Yamanashi Limited Plasma process method using an electrostatic chuck
JPH06326177A (en) * 1993-05-17 1994-11-25 Tokyo Electron Ltd Releasing method for treated material
EP0630990A2 (en) * 1993-06-21 1994-12-28 Applied Materials, Inc. Method of limiting sticking of body to a susceptor in a deposition treatment
JPH07263531A (en) * 1994-02-03 1995-10-13 Anelva Corp Plasma processing apparatus including removal mechanism of electrostatically attracted substrate to be processed and removal method of the electrostatically attracted substrate
US5552955A (en) * 1994-02-03 1996-09-03 Anelva Corporation Substrate removal method and mechanism for effecting the method
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US5677824A (en) * 1995-11-24 1997-10-14 Nec Corporation Electrostatic chuck with mechanism for lifting up the peripheral of a substrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135730A (en) * 1983-01-24 1984-08-04 Hitachi Ltd Device for surface modification
JPH07109855B2 (en) 1990-02-14 1995-11-22 株式会社日立製作所 Electrostatic chuck electrostatic charge removal method
JP2635195B2 (en) 1990-02-19 1997-07-30 株式会社日立製作所 Electrification removal method of electrostatic chuck
JPH04271286A (en) 1991-02-22 1992-09-28 Fujitsu Ltd Electrostatic chuck
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JP3259380B2 (en) * 1992-12-04 2002-02-25 ソニー株式会社 Method for manufacturing semiconductor device
JPH06177078A (en) * 1992-12-08 1994-06-24 Tokyo Electron Ltd Electrostatic chuck
JPH06188305A (en) * 1992-12-17 1994-07-08 Tokyo Electron Ltd Apparatus and method for separation of body to be attracted as well as plasma processing apparatus
EP0938134A3 (en) * 1993-05-20 2000-01-19 Hitachi, Ltd. Plasma processing method
JP3082624B2 (en) * 1994-12-28 2000-08-28 住友金属工業株式会社 How to use electrostatic chuck
US5793192A (en) * 1996-06-28 1998-08-11 Lam Research Corporation Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159744A (en) * 1988-12-14 1990-06-19 Fuji Electric Co Ltd Wafer release mechanism of semiconductor wafer chucking device
JPH0451542A (en) * 1990-06-19 1992-02-20 Fujitsu Ltd Electrostatically attracting method
JPH05291194A (en) * 1991-04-15 1993-11-05 Anelva Corp Plasma procassing method and apparatus
US5310453A (en) * 1992-02-13 1994-05-10 Tokyo Electron Yamanashi Limited Plasma process method using an electrostatic chuck
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
JPH06326177A (en) * 1993-05-17 1994-11-25 Tokyo Electron Ltd Releasing method for treated material
EP0630990A2 (en) * 1993-06-21 1994-12-28 Applied Materials, Inc. Method of limiting sticking of body to a susceptor in a deposition treatment
JPH07263531A (en) * 1994-02-03 1995-10-13 Anelva Corp Plasma processing apparatus including removal mechanism of electrostatically attracted substrate to be processed and removal method of the electrostatically attracted substrate
US5552955A (en) * 1994-02-03 1996-09-03 Anelva Corporation Substrate removal method and mechanism for effecting the method
US5677824A (en) * 1995-11-24 1997-10-14 Nec Corporation Electrostatic chuck with mechanism for lifting up the peripheral of a substrate

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 414 (E - 0975) 7 September 1990 (1990-09-07) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 246 (E - 1212) 5 June 1992 (1992-06-05) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 077 (E - 1504) 8 February 1994 (1994-02-08) *

Also Published As

Publication number Publication date
EP0798775A2 (en) 1997-10-01
JP3163973B2 (en) 2001-05-08
JPH09260475A (en) 1997-10-03
KR970067549A (en) 1997-10-13
US6174370B1 (en) 2001-01-16
KR100298910B1 (en) 2001-10-19

Similar Documents

Publication Publication Date Title
EP0798775A3 (en) Semiconductor wafer chucking device and method for removing semiconductor wafer
EP0810478A3 (en) A coater having a controllable pressurized process chamber for semiconductor processing
EP0673545A4 (en) Process and apparatus for etching semiconductor wafers.
WO2001046999A3 (en) Method and apparatus for supercritical processing of a workpiece
GB2313230B (en) Method for plasma etching in a process for fabrication of semiconductor device
WO1999010566A3 (en) Process chamber and method for depositing and/or removing material on a substrate
AU5537098A (en) Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
EP0847085A3 (en) Method and apparatus for both mechanically and electrostatically clamping a wafer
AU5094099A (en) Methods and apparatus for electropolishing metal interconnections on semiconductor devices
WO1987007077A3 (en) Method and apparatus for cleaning semiconductor wafers
AU3361797A (en) Method and apparatus for contactless treatment of a semiconductor substrate in wafer form
SG63637A1 (en) Apparatus and method for cleaning semiconductor wafers
CA2050781A1 (en) Process for preparing semiconductor device
AU2769699A (en) Method and apparatus for removing die from a wafer and conveying die to a pickuplocation
EP1129362A4 (en) Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processing
GB0013656D0 (en) Method and apparatus for removing photoresist on a semiconductor wafer
EP0637064A3 (en) Method and apparatus for high-flatness etching of wafer.
EP0740336A3 (en) Method for fabricating semiconductor device having buried contact structure
GB2319532B (en) Method and apparatus for treating a semiconductor wafer
TW291587B (en) Methods and apparatus for reducing etch rate loading
WO1999050888A3 (en) Semiconductor purification apparatus and method
TW375765B (en) Method for reducing particles deposited onto a semiconductor wafer during plasma processing
JPS5434751A (en) Washing method for silicon wafer
EP1050369A3 (en) Method and apparatus for polishing workpieces
AU3054999A (en) Method and apparatus for wafer processing, and method and apparatus for exposure

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB

17P Request for examination filed

Effective date: 19990531

17Q First examination report despatched

Effective date: 20030711

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20030820