EP0689222A3 - Herstellungsverfahren einer Mikrospitzelektronenquelle und nach dem Verfahren hergestellte Mikrospitzelektronenquelle - Google Patents

Herstellungsverfahren einer Mikrospitzelektronenquelle und nach dem Verfahren hergestellte Mikrospitzelektronenquelle Download PDF

Info

Publication number
EP0689222A3
EP0689222A3 EP95400910A EP95400910A EP0689222A3 EP 0689222 A3 EP0689222 A3 EP 0689222A3 EP 95400910 A EP95400910 A EP 95400910A EP 95400910 A EP95400910 A EP 95400910A EP 0689222 A3 EP0689222 A3 EP 0689222A3
Authority
EP
European Patent Office
Prior art keywords
electron source
manufacturing
micropoint
source obtained
micropoint electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95400910A
Other languages
English (en)
French (fr)
Other versions
EP0689222B1 (de
EP0689222A2 (de
Inventor
Robert Meyer
Pierre Vaudaine
Philippe Rambaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR9404948A external-priority patent/FR2719155B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to EP98201095A priority Critical patent/EP0856868B1/de
Publication of EP0689222A2 publication Critical patent/EP0689222A2/de
Publication of EP0689222A3 publication Critical patent/EP0689222A3/de
Application granted granted Critical
Publication of EP0689222B1 publication Critical patent/EP0689222B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • H01J1/3042Field-emissive cathodes microengineered, e.g. Spindt-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
EP95400910A 1994-04-25 1995-04-24 Herstellungsverfahren einer Mikrospitzelektronenquelle Expired - Lifetime EP0689222B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP98201095A EP0856868B1 (de) 1994-04-25 1995-04-24 Feldemissionselektronenquelle und Bildschirm mit solcher Feldemissionselektronenquelle

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR9404948 1994-04-25
FR9404948A FR2719155B1 (fr) 1994-04-25 1994-04-25 Procédé de réalisation de sources d'électrons à micropointes et source d'électrons à micropointes obtenue par ce procédé.
FR9413972A FR2719156B1 (fr) 1994-04-25 1994-11-22 Source d'électrons à micropointes, les micropointes comportant deux parties.
FR9413972 1994-11-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP98201095A Division EP0856868B1 (de) 1994-04-25 1995-04-24 Feldemissionselektronenquelle und Bildschirm mit solcher Feldemissionselektronenquelle

Publications (3)

Publication Number Publication Date
EP0689222A2 EP0689222A2 (de) 1995-12-27
EP0689222A3 true EP0689222A3 (de) 1996-02-07
EP0689222B1 EP0689222B1 (de) 2000-01-19

Family

ID=26231113

Family Applications (2)

Application Number Title Priority Date Filing Date
EP95400910A Expired - Lifetime EP0689222B1 (de) 1994-04-25 1995-04-24 Herstellungsverfahren einer Mikrospitzelektronenquelle
EP98201095A Expired - Lifetime EP0856868B1 (de) 1994-04-25 1995-04-24 Feldemissionselektronenquelle und Bildschirm mit solcher Feldemissionselektronenquelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP98201095A Expired - Lifetime EP0856868B1 (de) 1994-04-25 1995-04-24 Feldemissionselektronenquelle und Bildschirm mit solcher Feldemissionselektronenquelle

Country Status (5)

Country Link
US (1) US5635790A (de)
EP (2) EP0689222B1 (de)
CA (1) CA2146528A1 (de)
DE (2) DE69514576T2 (de)
FR (1) FR2719156B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5702281A (en) * 1995-04-20 1997-12-30 Industrial Technology Research Institute Fabrication of two-part emitter for gated field emission device
US6356014B2 (en) * 1997-03-27 2002-03-12 Candescent Technologies Corporation Electron emitters coated with carbon containing layer
US6004180A (en) * 1997-09-30 1999-12-21 Candescent Technologies Corporation Cleaning of electron-emissive elements
JP2002083555A (ja) * 2000-07-17 2002-03-22 Hewlett Packard Co <Hp> セルフアライメント型電子源デバイス
US6873097B2 (en) * 2001-06-28 2005-03-29 Candescent Technologies Corporation Cleaning of cathode-ray tube display
CN1300818C (zh) * 2003-08-06 2007-02-14 北京大学 一种场发射针尖及其制备方法与应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0234989A1 (de) * 1986-01-24 1987-09-02 Commissariat A L'energie Atomique Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung
EP0434330A2 (de) * 1989-12-18 1991-06-26 Seiko Epson Corporation Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
EP0443920A1 (de) * 1990-02-23 1991-08-28 Thomson-Csf Verfahren zur gesteuerten Züchtung von nadelförmigen Kristallen und ihre Verwendung zur Herstellung spitzenförmiger Mikrokathoden
EP0535953A2 (de) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Mit Feldemission arbeitende elektronische Vorrichtung
EP0570211A1 (de) * 1992-05-15 1993-11-18 Gec-Marconi Limited Kathodenstrukturen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US5225820A (en) * 1988-06-29 1993-07-06 Commissariat A L'energie Atomique Microtip trichromatic fluorescent screen
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
US5203731A (en) * 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0234989A1 (de) * 1986-01-24 1987-09-02 Commissariat A L'energie Atomique Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung
EP0434330A2 (de) * 1989-12-18 1991-06-26 Seiko Epson Corporation Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
EP0443920A1 (de) * 1990-02-23 1991-08-28 Thomson-Csf Verfahren zur gesteuerten Züchtung von nadelförmigen Kristallen und ihre Verwendung zur Herstellung spitzenförmiger Mikrokathoden
EP0535953A2 (de) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Mit Feldemission arbeitende elektronische Vorrichtung
EP0570211A1 (de) * 1992-05-15 1993-11-18 Gec-Marconi Limited Kathodenstrukturen

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
D STEPHANI ET AL.: "MICROFABRICATION OF METAL-COATED SILICON TIPS AND THEIR FIELD EMISSION PROPERTIES", MICROELECTRONIC ENGINEERING, vol. 13, no. 1/4, AMSTERDAM NL, pages 505 - 508, XP024436782, DOI: doi:10.1016/0167-9317(91)90142-Z *
P R SCHWOEBEL ET AL.: "Field-emitter array performance enhancement using hydrogen glow discharges", APPLIED PHYSICS LETTERS., vol. 63, no. 1, NEW YORK US, pages 33 - 35, XP000382555, DOI: doi:10.1063/1.109741 *

Also Published As

Publication number Publication date
DE69531220D1 (de) 2003-08-07
EP0856868A2 (de) 1998-08-05
EP0856868B1 (de) 2003-07-02
EP0689222B1 (de) 2000-01-19
FR2719156B1 (fr) 1996-05-24
US5635790A (en) 1997-06-03
CA2146528A1 (en) 1995-10-26
DE69531220T2 (de) 2004-05-27
DE69514576T2 (de) 2000-08-10
DE69514576D1 (de) 2000-02-24
FR2719156A1 (fr) 1995-10-27
EP0856868A3 (de) 1998-09-30
EP0689222A2 (de) 1995-12-27

Similar Documents

Publication Publication Date Title
EP0757371A3 (de) Elektronenemittierende Vorrichtung, Elektronenquelle und damit versehenes Bilderzeugungsgerät sowie Verfahren zu deren Herstellung
EP0434001A3 (en) Electron emission device and method of manufacturing the same
PL320222A1 (en) Functionalised polyorganosilanes and method of obtaining them
AU721994C (en) Electron-emitting device and electron source and image- forming apparatus using the same as well as method of manufacturing the same
AU2773195A (en) Improved wafer and method of making same
AU4090397A (en) Electrospray ionization source and method of using the same
GB2304985B (en) Electron source
AU7265096A (en) Production of 64cu and other radionuclides using charged-particle accelerator
AU1008995A (en) Hubcap and method of manufacturing the same
DE69116859D1 (de) Elektronenquelle und herstellungsverfahren
GB2287823B (en) Universal quadrupole and method of manufacture
PL320261A1 (en) Functionalised polyorganosilanes and method of obtaining them
AU3685295A (en) Sculpture and method of making same
EP0416558A3 (en) Electron emission element and method of manufacturing the same
TW306680U (en) Cathode-ray tube and method of manufacturing the same
IL109656A0 (en) Process for the manufacture of androstane-17-carbothioates and androstane-17-carbothioates prepared thereby
EP0704876A4 (de) Flache anzeige und herstellungsverfahren derselben
EP0681312A4 (de) Kaltkathoden-elektrodenquellenelement und verfahren zur herstellung desselben.
EP0642196A3 (de) Lampenfassung und Verfahren zu ihrer Herstellung.
EP0689222A3 (de) Herstellungsverfahren einer Mikrospitzelektronenquelle und nach dem Verfahren hergestellte Mikrospitzelektronenquelle
GB2304984B (en) Electron source
AU5777096A (en) Electron source and applications of the same
EP0977235A4 (de) Elektronenemittierende vorrichtung und herstellungsverfahren dafur
EP0765012A4 (de) Nichtverdampfbares gettermaterial und verfahren zu seiner herstellung
EP0740375A3 (de) Lampenfassung und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE GB IT

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE GB IT

17P Request for examination filed

Effective date: 19960712

17Q First examination report despatched

Effective date: 19971120

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE GB IT

REF Corresponds to:

Ref document number: 69514576

Country of ref document: DE

Date of ref document: 20000224

ITF It: translation for a ep patent filed
GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 20000323

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20140422

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20140411

Year of fee payment: 20

Ref country code: IT

Payment date: 20140417

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 69514576

Country of ref document: DE

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20150423

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20150423