EP0668604A1 - Method of manufacturing a cathode of a microtip fluorescent display and its product - Google Patents
Method of manufacturing a cathode of a microtip fluorescent display and its product Download PDFInfo
- Publication number
- EP0668604A1 EP0668604A1 EP95410012A EP95410012A EP0668604A1 EP 0668604 A1 EP0668604 A1 EP 0668604A1 EP 95410012 A EP95410012 A EP 95410012A EP 95410012 A EP95410012 A EP 95410012A EP 0668604 A1 EP0668604 A1 EP 0668604A1
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- Prior art keywords
- cathode
- grid
- resistive
- layer
- mesh
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000009432 framing Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 4
- 230000000873 masking effect Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Definitions
- the subject of the present invention is a process for manufacturing a fluorescent microdot screen cathode, as well as the product obtained by this process.
- It relates to the industrial sector of flat display screens with row-column matrix addressing, and more particularly of display screens using microtip technology, that is to say made up of a vacuum tube formed by two plates of thin glass, the back plate, or cathode plate, comprising a matrix array of field effect emitters deposited by thin film techniques, and the front plate, or anode plate, covered on its internal face with a transparent conductive layer carrying phosphors.
- each light point (pixel) of the anode is associated with an emissive surface located opposite and made up of a large number of microtips.
- This emissive surface is defined by the intersection of a line (grid) and a column (cathode conductor) of the matrix.
- the cathode of a conventional microtip screen consists essentially of four layers deposited successively on a glass or silicon substrate, then etched, namely: a conductive layer playing the role of "column conductors" of cathode, a resistive layer generally made of silicon intended to limit the value of the emission current, an insulating layer and finally a second conductive layer constituting the "line conductors" of the grid. After depositing these layers, holes are formed in the grid and the insulating layer in which the microtips are then deposited.
- the production of the constituent layers of the cathode requires at least four, and preferably five, photolithographic masking and etching operations, namely an etching of the cathode columns, an etching of the holes, an etching grid lines, etching of cathode contacts, and preferably a partial etching of the resistive layer between the cathode columns to avoid leaks and couplings between columns.
- the images formed by a microtip screen are observed through the anode plate and it is the side of the phosphors opposite to that which receives the electrons which is seen, that is to say the least bright.
- An object of the present invention is to simplify the manufacture of the cathode of microtip fluorescent screens by reducing the number of masking levels to three instead of five.
- Another object of the present invention is to make said cathode transparent to obtain an improvement in light efficiency by allowing observation of the luminescent material from the side where the electrons strike it, through the cathode.
- intersection of a row and a column defines an image point 7 or pixel ( Figure 1).
- a column conductor 2 consists of an openwork or mesh strip.
- Each grid line is made of meshes consisting of square conductive elements 6 linked together by fine conductive bridges 8 (for the sake of simplification in FIG. 2, only the longitudinal bridges have been represented; it is clear that there are also two transverse bridges for each square as shown in Figure 8).
- the microtips 4 are located in the grid squares and not in the conductive bridges.
- Each image point 7 is made up of several squares (four in FIG. 1 but much more in practice). Each square carries several microtips (four in the figure but often 16 in a real device).
- the respective dimensions of the meshes of the column conductors 2 and of the squares constituting the grid 6 are determined so as to provide empty areas 9 between said squares and each column conductor. We can thus observe the anode phosphors through the cathode plate 1.
- the access resistance to the microtips is therefore essentially controlled by the geometry of the bars as well as by the resistivity of the resistive layer.
- This access resistance must be high enough to standardize and limit the emission current of the tips while introducing only a few volts of voltage drop.
- a screen was produced according to the invention.
- the resistive layer was made of amorphous silicon offering a resistance of 100 megohms per square, four bars allowed access to each square mesh of 25 micrometers per side; the bars had a length to width ratio of 2.
- the emission measured was 500 mA per dm2. Results of the same order of magnitude can be obtained with neighboring values.
- Figure 2 also shows that the electrical continuity along a grid line, from mesh to mesh is ensured by four conductive bridges 8 covering four insulating bars and four resistive bars 10. Since the mask which was used to engrave them is unique , the conductive bars ensuring the continuity of the grid lines and the resistive bars ensuring the access of the cathode current to the microtips have the same width and length.
- the same shape of the bars must allow the passage of a large current in the grid lines and only allow the passage of a negligible leakage current from one column to another.
- This leakage current is inversely proportional to the resistance of the resistive layer 3 while the current of polarization of the grids is inversely proportional to the resistance of the upper conductive layer.
- a resistance per square of 100 megohms is sufficient to guarantee the emission rate required for a screen.
- the resistance of the gate metal in comparison is very low: 1 ohm per square in the case of the device produced, thanks to a niobium grid 6 400 nm thick. The resistance ratio in the device was therefore 108.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Abstract
Description
La présente invention a pour objet un procédé de fabrication de cathode d'écran fluorescent à micropointes, ainsi que le produit obtenu par ce procédé.The subject of the present invention is a process for manufacturing a fluorescent microdot screen cathode, as well as the product obtained by this process.
Elle concerne le secteur industriel des écrans d'affichage plats à adressage matriciel lignes-colonnes, et plus particulièrement des écrans de visualisation utilisant la technologie des micropointes, c'est-à-dire constitués d'un tube à vide formé de deux plaques de verre mince, la plaque arrière, ou plaque cathode, comportant un réseau matriciel d'émetteurs à effet de champ déposés par les techniques de couches minces, et la plaque avant, ou plaque anode, recouverte sur sa face interne d'une couche conductrice transparente portant des luminophores.It relates to the industrial sector of flat display screens with row-column matrix addressing, and more particularly of display screens using microtip technology, that is to say made up of a vacuum tube formed by two plates of thin glass, the back plate, or cathode plate, comprising a matrix array of field effect emitters deposited by thin film techniques, and the front plate, or anode plate, covered on its internal face with a transparent conductive layer carrying phosphors.
Dans ce type d'écrans, à chaque point lumineux (pixel) de l'anode, est associé une surface émissive située vis-à-vis et constituée d'un grand nombre de micropointes. Cette surface émissive est définie par l'intersection d'une ligne (grille) et d'une colonne (conducteur cathodique) de la matrice.In this type of screens, each light point (pixel) of the anode is associated with an emissive surface located opposite and made up of a large number of microtips. This emissive surface is defined by the intersection of a line (grid) and a column (cathode conductor) of the matrix.
La cathode d'un écran à micropointes classique est constituée pour l'essentiel de quatre couches déposées successivement sur un substrat de verre ou de silicium, puis gravées, à savoir : une couche conductrice jouant le rôle de "conducteurs colonnes" de cathode, une couche résistive généralement en silicium destinée à limiter la valeur du courant d'émission, une couche isolante et enfin une seconde couche conductrice constituant les "conducteurs lignes" de grille. Après dépôt de ces couches, on forme dans la grille et la couche isolante des trous dans lesquels sont ensuite déposées les micropointes.The cathode of a conventional microtip screen consists essentially of four layers deposited successively on a glass or silicon substrate, then etched, namely: a conductive layer playing the role of "column conductors" of cathode, a resistive layer generally made of silicon intended to limit the value of the emission current, an insulating layer and finally a second conductive layer constituting the "line conductors" of the grid. After depositing these layers, holes are formed in the grid and the insulating layer in which the microtips are then deposited.
Dans les procédés connus à ce jour, la réalisation des couches constitutives de la cathode nécessite au minimum quatre, et de préférence cinq, opérations de masquage et de gravure photolithographique, à savoir une gravure des colonnes de cathode, une gravure des trous, une gravure des lignes de grille, une gravure de contacts de cathode, et de préférence une gravure partielle de la couche résistive entre les colonnes de cathode pour éviter des fuites et des couplages entre colonne.In the methods known to date, the production of the constituent layers of the cathode requires at least four, and preferably five, photolithographic masking and etching operations, namely an etching of the cathode columns, an etching of the holes, an etching grid lines, etching of cathode contacts, and preferably a partial etching of the resistive layer between the cathode columns to avoid leaks and couplings between columns.
Par ailleurs, les images formées par un écran à micropointes sont observées au travers de la plaque anode et c'est la face des luminophores opposée à celle qui reçoit les électrons qui est vue, c'est-à-dire la moins brillante.Furthermore, the images formed by a microtip screen are observed through the anode plate and it is the side of the phosphors opposite to that which receives the electrons which is seen, that is to say the least bright.
Un objet de la présente invention est de simplifier la fabrication de la cathode des écrans fluorescents à micropointes en ramenant à trois au lieu de cinq le nombre de niveaux de masquage.An object of the present invention is to simplify the manufacture of the cathode of microtip fluorescent screens by reducing the number of masking levels to three instead of five.
Un autre objet de la présente invention est de rendre transparente ladite cathode pour obtenir une amélioration de l'efficacité lumineuse en permettant l'observation du matériau luminescent du côté où les électrons le frappent, à travers la cathode.Another object of the present invention is to make said cathode transparent to obtain an improvement in light efficiency by allowing observation of the luminescent material from the side where the electrons strike it, through the cathode.
Ces objets sont atteints en gravant ensemble les trois couches supérieures de la cathode (la grille, l'isolant de grille et la couche résistive), selon un motif unique ajouré qui définit à la fois les lignes de grille et les résistances d'accès aux micropointes par la couche résistive, les conducteurs colonnes étant constitués de mailles métalliques fines.These objects are achieved by etching together the three upper layers of the cathode (the grid, the grid insulator and the resistive layer), according to a single openwork pattern which defines both the grid lines and the access resistances to the microtips by the resistive layer, the column conductors being made up of fine metallic meshes.
Sur les dessins annexés, donnés à titre d'exemple non limitatif d'une des formes de réalisation de l'objet de la présente invention :
- la figure 1 représente, vu de dessus et de façon schématique, un point image (pixel) défini comme le croisement d'une ligne et d'une colonne du réseau matriciel,
- la figure 2 est une vue en perspective cavalière illustrant schématiquement une structure de cathode selon la présente invention, et
- les figures 3 à 8 illustrent des étapes successives de fabrication de cathode selon l'invention.
- FIG. 1 represents, seen from above and schematically, an image point (pixel) defined as the crossing of a line and a column of the matrix network,
- FIG. 2 is a perspective view showing schematically a cathode structure according to the present invention, and
- Figures 3 to 8 illustrate successive stages of cathode manufacturing according to the invention.
Les figures 1 et 2 représentent une structure de cathode d'écran à micropointes selon la présente invention. Cette stucture comporte sucoessivement sur un substrat 1 constitué d'une plaque de verre :
- des "conducteurs colonnes" 2 constitués de bandes ajourées (ou maillées) d'une couche de niobium, d'aluminium ou autre conducteur,
- une couche résistive 3 sur laquelle seront formées les
micropointes 4, - une couche isolante 5 (SiO₂ par exemple) qui constitue l'isolant de la grille,
- une couche conductrice, en niobium ou autre, qui constitue la
grille 6 formant les conducteurs lignes.
- "column conductors" 2 made up of perforated (or mesh) strips of a layer of niobium, aluminum or other conductor,
- a
resistive layer 3 on which themicrotips 4 will be formed, - an insulating layer 5 (SiO₂ for example) which constitutes the insulator of the grid,
- a conductive layer, made of niobium or the like, which constitutes the
grid 6 forming the line conductors.
Le croisement d'une ligne et d'une colonne définit un point image 7 ou pixel (figure 1).The intersection of a row and a column defines an
Un conducteur de colonne 2 est constitué d'une bande ajourée ou maillée. Chaque ligne de grille est faite de mailles consistant en éléments carrés conducteurs 6 reliés entre eux par des ponts conducteurs fins 8 (par souçi de simplification de la figure 2, seuls les ponts longitudinaux ont été représentés ; il est clair qu'il existe aussi deux ponts transversaux pour chaque carré comme le montre la figure 8). Les micropointes 4 sont situées dans les carrés de grille et non dans les ponts conducteurs. Chaque point image 7 est constitué de plusieurs carrés (quatre sur la figure 1 mais beaucoup plus en pratique). Chaque carré porte plusieurs micropointes (quatre sur la figure mais souvent 16 dans un dispositif réel).A
Les dimensions respectives des mailles des conducteurs colonnes 2 et des carrés constituant la grille 6 sont déterminées de manière à ménager des zones vides 9 entre lesdits carrés et chaque conducteur de colonne. On peut ainsi observer les luminophores d'anode à travers la plaque de cathode 1.The respective dimensions of the meshes of the
La liaison électrique entre la base de chaque micropointe et les quatre côtés d'une maille de cathode est assurée par le passage de courant dans l'épaisseur de chacun des quatre barreaux résistifs 10 et dans l'épaisseur du carré résistif 3.The electrical connection between the base of each microtip and the four sides of a cathode mesh is ensured by the passage of current through the thickness of each of the four
La résistance d'accès aux micropointes est donc contrôlée essentiellement par la géométrie des barreaux ainsi que par la résistivité de la couche résistive.The access resistance to the microtips is therefore essentially controlled by the geometry of the bars as well as by the resistivity of the resistive layer.
Cette résistance d'accès doit être assez élevée pour uniformiser et limiter le courant d'émission des pointes tout en n'introduisant que quelques volts de chute de tension.This access resistance must be high enough to standardize and limit the emission current of the tips while introducing only a few volts of voltage drop.
Un écran a été réalisé selon l'invention. A titre indicatif, la couche résistive a été réalisée en silicium amorphe offrant une résistance de 100 mégohms par carré, quatre barreaux permettaient l'accès à chaque maille carrée de 25 micromètres de côté ; les barreaux avaient un rapport longueur sur largeur de 2. Sous 80 volts de polarisation grille/cathode, l'émission mesurée était de 500 mA par dm². Des résultats du même ordre de grandeur pourront être obtenus avec des valeurs voisines.A screen was produced according to the invention. As an indication, the resistive layer was made of amorphous silicon offering a resistance of 100 megohms per square, four bars allowed access to each square mesh of 25 micrometers per side; the bars had a length to width ratio of 2. Under 80 volts of grid / cathode polarization, the emission measured was 500 mA per dm². Results of the same order of magnitude can be obtained with neighboring values.
La figure 2 montre également que la continuité électrique le long d'une ligne de grille, de maille à maille est assurée par quatre ponts conducteurs 8 recouvrant quatre barreaux isolants et quatre barreaux résistifs 10. Puisque le masque qui a servi à les graver est unique, les barreaux conducteurs assurant la continuité des lignes de grille et les barreaux résistifs assurant l'accès du courant cathodique jusqu'aux micropointes ont les mêmes largeur et longueur.Figure 2 also shows that the electrical continuity along a grid line, from mesh to mesh is ensured by four conductive bridges 8 covering four insulating bars and four
La même forme des barreaux doit permettre le passage d'un courant important dans les lignes de grille et ne permettre le passage que d'un courant de fuite négligeable d'une colonne à une autre. Ce courant de fuite est inversement proportionnel à la résistance de la couche résistive 3 alors que le courant de polarisation des grilles est inversement proportionnel à la résistance de la couche conductrice supérieure. Or, comme il a été déjà mentionné, une résistanoe par carré de 100 mégohms suffit à garantir le taux d'émission requis pour un écran. Par ailleurs, la résistance du métal de grille, en comparaison est très faible : 1 ohm par carré dans le cas du dispositif réalisé, grace à une grille 6 en niobium de 400 nm d'épaisseur. Le rapport des résistances dans le dispositif était donc de 10⁸. Il a alors été expérimentalement démontré que, pour un taux de multiplexage de plusieurs centaines de lignes, un rafraîchissement d'image à 60 Hz, un nombre de niveaux de gris supérieur à 256 par couleur, l'image obtenue est exempte de défauts visuels du type couplage de colonne à colonne ou de ligne à ligne. Il est par ailleurs envisageable de remplaoer le niobium par un métal plus conducteur (l'aluminium est 10 fois plus conducteur).The same shape of the bars must allow the passage of a large current in the grid lines and only allow the passage of a negligible leakage current from one column to another. This leakage current is inversely proportional to the resistance of the
Les figures 3 à 8 illustrent des étapes successives d'un procédé de fabrication selon l'invention :
- dépôt d'une couche métallique 11 de cathode (figure 3),
- gravure des colonnes maillées de conducteurs de
cathode 2 au moyen d'un premier masque (figure 4), - dépôt des couches résistive 3,
isolante 5, et de grille 6 (figure 5), - gravure des
trous 12 desmicropointes 4 grâce à un deuxième masque (figure 6), - dépôt des micropointes (figure 7),
- gravure simultanée des
grilles 6 et des couches isolante 5 et résistive 3 en lignes ajourées (figure 8) au moyen d'un troisième et dernier masque qui sert également à définir les zones de contact de lignes et de colonnes.
- depositing a metal layer 11 of cathode (FIG. 3),
- etching of the mesh columns of
cathode conductors 2 by means of a first mask (FIG. 4), - deposition of the resistive 3, insulating 5, and
grid 6 layers (FIG. 5), - etching of the
holes 12 of themicrotips 4 using a second mask (FIG. 6), - microtip deposition (Figure 7),
- simultaneous etching of the
grids 6 and of the insulating 5 and resistive 3 layers in openwork lines (FIG. 8) by means of a third and last mask which also serves to define the contact zones of rows and columns.
Ainsi, avec trois étapes de gravure seulement, on obtient un résultat aussi bon qu'avec cinq étapes de gravure dans l'art antérieur. On obtient de plus un écran observable à partir de la cathode.Thus, with only three etching steps, one obtains a result as good as with five etching steps in the prior art. In addition, an observable screen is obtained from the cathode.
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9402291A FR2716571B1 (en) | 1994-02-22 | 1994-02-22 | Method for manufacturing a microtip fluorescent screen cathode and product obtained by this method. |
FR9402291 | 1994-02-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0668604A1 true EP0668604A1 (en) | 1995-08-23 |
EP0668604B1 EP0668604B1 (en) | 1997-06-25 |
Family
ID=9460512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95410012A Expired - Lifetime EP0668604B1 (en) | 1994-02-22 | 1995-02-20 | Method of manufacturing a cathode of a microtip fluorescent display and its product |
Country Status (5)
Country | Link |
---|---|
US (1) | US5574333A (en) |
EP (1) | EP0668604B1 (en) |
JP (1) | JP3616418B2 (en) |
DE (1) | DE69500372T2 (en) |
FR (1) | FR2716571B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998025291A1 (en) * | 1996-12-06 | 1998-06-11 | Commissariat A L'energie Atomique | Display screen comprising a source of electrons with microtips, capable of being observed through the microtip support, and method for making this source |
EP0987729A1 (en) * | 1998-09-18 | 2000-03-22 | Pixtech S.A. | Low degassing microtip cathode |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08510588A (en) * | 1993-01-19 | 1996-11-05 | ダニロビッチ カルポフ,レオニド | Field emission device |
US5952987A (en) * | 1996-01-18 | 1999-09-14 | Micron Technology, Inc. | Method and apparatus for improved gray scale control in field emission displays |
US6144144A (en) * | 1997-10-31 | 2000-11-07 | Candescent Technologies Corporation | Patterned resistor suitable for electron-emitting device |
US6414428B1 (en) | 1998-07-07 | 2002-07-02 | Candescent Technologies Corporation | Flat-panel display with intensity control to reduce light-centroid shifting |
US6879097B2 (en) * | 2001-09-28 | 2005-04-12 | Candescent Technologies Corporation | Flat-panel display containing electron-emissive regions of non-uniform spacing or/and multi-part lateral configuration |
JP3892769B2 (en) * | 2002-07-08 | 2007-03-14 | 株式会社 日立ディスプレイズ | Display device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0234989A1 (en) * | 1986-01-24 | 1987-09-02 | Commissariat A L'energie Atomique | Method of manufacturing an imaging device using field emission cathodoluminescence |
EP0559156A1 (en) * | 1992-03-02 | 1993-09-08 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL9100122A (en) * | 1991-01-25 | 1992-08-17 | Philips Nv | DISPLAY DEVICE. |
US5259799A (en) * | 1992-03-02 | 1993-11-09 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
KR0129678B1 (en) * | 1992-05-22 | 1998-04-06 | Futaba Denshi Kogyo Kk | Fluorescent display device |
-
1994
- 1994-02-22 FR FR9402291A patent/FR2716571B1/en not_active Expired - Fee Related
-
1995
- 1995-02-17 US US08/390,087 patent/US5574333A/en not_active Expired - Lifetime
- 1995-02-20 DE DE69500372T patent/DE69500372T2/en not_active Expired - Lifetime
- 1995-02-20 EP EP95410012A patent/EP0668604B1/en not_active Expired - Lifetime
- 1995-02-21 JP JP5517895A patent/JP3616418B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0234989A1 (en) * | 1986-01-24 | 1987-09-02 | Commissariat A L'energie Atomique | Method of manufacturing an imaging device using field emission cathodoluminescence |
EP0559156A1 (en) * | 1992-03-02 | 1993-09-08 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998025291A1 (en) * | 1996-12-06 | 1998-06-11 | Commissariat A L'energie Atomique | Display screen comprising a source of electrons with microtips, capable of being observed through the microtip support, and method for making this source |
FR2756969A1 (en) * | 1996-12-06 | 1998-06-12 | Commissariat Energie Atomique | DISPLAY SCREEN COMPRISING A SOURCE OF MICROPOINT ELECTRON, OBSERVABLE THROUGH THE SUPPORT OF MICROPOINTS, AND METHOD FOR MANUFACTURING THE SOURCE |
US6133690A (en) * | 1996-12-06 | 2000-10-17 | Commissariat A L'energie Atomique | Display screen comprising a source of electrons with microtips, capable of being observed through the microtip support, and method for making this source |
EP0987729A1 (en) * | 1998-09-18 | 2000-03-22 | Pixtech S.A. | Low degassing microtip cathode |
FR2783633A1 (en) * | 1998-09-18 | 2000-03-24 | Pixtech Sa | LOW-GAS MICROPOINT CATHODE |
Also Published As
Publication number | Publication date |
---|---|
US5574333A (en) | 1996-11-12 |
EP0668604B1 (en) | 1997-06-25 |
DE69500372T2 (en) | 1997-10-09 |
FR2716571A1 (en) | 1995-08-25 |
DE69500372D1 (en) | 1997-07-31 |
JP3616418B2 (en) | 2005-02-02 |
FR2716571B1 (en) | 1996-05-03 |
JPH0850852A (en) | 1996-02-20 |
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