EP0638928A1 - Power semiconductor device with pressure contact - Google Patents

Power semiconductor device with pressure contact Download PDF

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Publication number
EP0638928A1
EP0638928A1 EP94111249A EP94111249A EP0638928A1 EP 0638928 A1 EP0638928 A1 EP 0638928A1 EP 94111249 A EP94111249 A EP 94111249A EP 94111249 A EP94111249 A EP 94111249A EP 0638928 A1 EP0638928 A1 EP 0638928A1
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Prior art keywords
power semiconductor
layer
contact
semiconductor body
metal
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EP94111249A
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German (de)
French (fr)
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EP0638928B1 (en
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Reinhold Dr. Dipl.-Phys. Kuhnert
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Siemens AG
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Siemens AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H01L23/4928—Bases or plates or solder therefor characterised by the materials the materials containing carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4922—Bases or plates or solder therefor having a heterogeneous or anisotropic structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Definitions

  • the invention relates to a power semiconductor component with a semiconductor body, with an anode-side and a cathode-side contact electrode made of a metal, the coefficient of thermal expansion of which differs from that of the semiconductor body, and with at least two pressurized contact surfaces between the semiconductor body and the contact electrodes.
  • Such power semiconductor components are state of the art (see e.g. DE-AS 1 185 728).
  • the invention has for its object to develop a power semiconductor device of the type specified such that the friction of the contact surfaces compared to known pairings is reduced.
  • At least one of the contact surfaces is provided with a layer which consists of an amorphous carbon-metal compound.
  • FIGS. 1 to 4 show the side view of an unencapsulated power semiconductor component.
  • the arrangement according to FIG. 1 has a semiconductor body 1 with cathode contacts 2.
  • a contact electrode 3 is pressed onto the semiconductor body on the cathode side, a contact electrode 5 is pressed onto the anode side.
  • the contact surfaces of both contact electrodes facing the semiconductor body 1 are designated 4 and 6, respectively.
  • the contact electrodes usually consist of copper, the semiconductor body of silicon. Copper and silicon have very different thermal expansion coefficients.
  • the contact surfaces 4, 6 are each provided with a layer 7, 8, which consists of an amorphous carbon-metal compound.
  • This carbon-metal compound can be, for example, a carbon-tungsten compound or a carbon-molybdenum compound.
  • Such an amorphous layer is obtained by connecting z. B. is deposited by sputtering a metal or metal carbide target in an argon-hydrocarbon atmosphere. This can be done in a radio frequency or DC field. Such methods are known and are known therefore not specifically explained here.
  • the embodiment of Figure 2 differs from that of Figure 1 essentially in that between the contact electrodes 3, 5 and the semiconductor body 1 disks 10, 14 are arranged, the coefficient of thermal expansion of which is between that of the silicon of the semiconductor body and that of the copper of the contact electrodes .
  • the disks 10, 14 can be made of tungsten in a known manner or molybdenum.
  • the disk 14 is provided with a layer 15 on its side facing the contact surface 4 of the contact electrode 3 and with a layer 16 on its side facing the semiconductor body 1. Both layers consist of the amorphous carbon-metal compound.
  • the disc 14 abuts the layers 15, 16 only under pressure on the contact electrode 3 or on the semiconductor body 1.
  • the semiconductor body On the anode side, the semiconductor body is cohesively connected, for example by alloying or low-temperature connection, to a disk 10 whose coefficient of thermal expansion lies between that of the silicon of the semiconductor body and that of the copper of the contact electrode 5.
  • the disc 10 has a contact surface 11 facing the contact electrode 5, which is provided with a layer 12.
  • Layer 12 also consists of the amorphous carbon-metal compound.
  • the disk 14 can therefore move laterally with little friction both relative to the contact electrode 3 and to the semiconductor body 1.
  • the contact electrode 5 can move laterally relative to the disk 10 and the semiconductor body 1.
  • the embodiment of Figure 3 differs from that of Figure 2 essentially in that between the semiconductor body 1 and the anode-side contact electrode 5 is a molybdenum or tungsten disk 18, which is provided on both sides with layers 19, 20 of the amorphous carbon-metal compound.
  • the disc 18 is only under pressure over the layers 19, 20 on the semiconductor body 1 or on the contact electrode 5.
  • low-friction lateral sliding of the disk 18 is possible both against the semiconductor body 1 and against the contact electrode 5.
  • the atomic ratio of metal to carbon need not be constant over the thickness of the layer. It may differ from the one on the bottom.
  • the partial layer 21 lying on the contact electrode 3 has a higher atomic ratio of metal to carbon than the partial layer 22 provided for the sliding pressure contact.
  • the former thus has a low resistance, the latter a low coefficient of friction.
  • the layer 21 preferably has a greater thickness than the layer 22. This allows a low contact resistance to be combined with good sliding properties.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

In the case of power semiconductor elements having pressure contact, contact surfaces which have different coefficients of thermal expansion lie on top of one another. This can lead to welding of the contact surfaces due to friction. Friction is kept at a low level by providing the contact surfaces (4, 6) with a layer (7, 8) which consists of an amorphous carbon-metal compound. The latter has a lower coefficient of friction with small resistivity. <IMAGE>

Description

Die Erfindung bezieht sich auf ein Leistungs-Halbleiterbauelement mit einem Halbleiterkörper, mit einer anodenseitigen und einer katodenseitigen Kontaktelektrode aus einem Metall, dessen thermischer Ausdehnungskoeffizient von dem des Halbleiterkörpers abweicht, und mit mindestens zwei unter Druck stehenden aufeinanderliegenden Kontaktflächen zwischen dem Halbleiterkörper und den Kontaktelektroden.The invention relates to a power semiconductor component with a semiconductor body, with an anode-side and a cathode-side contact electrode made of a metal, the coefficient of thermal expansion of which differs from that of the semiconductor body, and with at least two pressurized contact surfaces between the semiconductor body and the contact electrodes.

Solche Leistungs-Halbleiterbauelemente sind Stand der Technik (man vgl. z.B. die DE-AS 1 185 728).Such power semiconductor components are state of the art (see e.g. DE-AS 1 185 728).

Bei Leistungs-Halbleiterbauelementen der oben angegebenen Art tritt das Problem auf, daß sich die unter Druck aufeinanderliegenden Kontaktflächen wegen ihrer unterschiedlichen thermischen Ausdehnungskoeffizienten bei Lastwechseln relativ zueinander bewegen. Dies kann zum Verschweißen der Kontaktflächen durch Reibung führen. Es hat daher in der Vergangenheit nicht an Versuchen gefehlt, geeignete Materialpaarungen für die Kontaktflächen auszusuchen, bei denen ein Verschweißen nicht auftritt.The problem arises with power semiconductor components of the above-mentioned type that the contact surfaces lying on one another under pressure move relative to one another due to their different thermal expansion coefficients during load changes. This can lead to the welding of the contact surfaces due to friction. There has therefore been no shortage of attempts in the past to select suitable material pairs for the contact surfaces in which welding does not occur.

Der Erfindung liegt die Aufgabe zugrunde, ein Leistungs-Halbleiterbauelement der angegeben Art derart weiterzubilden, daß die Reibung der Kontaktflächen gegenüber bekannten Paarungen vermindert wird.The invention has for its object to develop a power semiconductor device of the type specified such that the friction of the contact surfaces compared to known pairings is reduced.

Dies wird dadurch erreicht, daß mindestens eine der Kontaktflächen mit einer Schicht versehen ist, die aus einer amorphen Kohlenstoff-Metallverbindung besteht.This is achieved in that at least one of the contact surfaces is provided with a layer which consists of an amorphous carbon-metal compound.

Weiterbildungen der Erfindung sind Gegenstand der Unteransprüche.Developments of the invention are the subject of the dependent claims.

Die Erfindung wird anhand von vier Ausführungsbeispielen in Verbindung mit den Figuren 1 bis 4 näher erläutert. Die Figuren zeigen jeweils die Seitenansicht auf ein ungekapseltes Leistungs-Halbleiterbauelement.The invention is explained in more detail using four exemplary embodiments in conjunction with FIGS. 1 to 4. The figures each show the side view of an unencapsulated power semiconductor component.

Die Anordnung nach Figur 1 hat einen Halbleiterkörper 1 mit Katodenkontakten 2. An den Halbleiterkörper ist katodenseitig eine Kontaktelektrode 3 angedrückt, an die Anodenseite eine Kontaktelektrode 5. Die dem Halbleiterkörper 1 zugewandten Kontaktflächen beider Kontaktelektroden sind mit 4 bzw. 6 bezeichnet.The arrangement according to FIG. 1 has a semiconductor body 1 with cathode contacts 2. A contact electrode 3 is pressed onto the semiconductor body on the cathode side, a contact electrode 5 is pressed onto the anode side. The contact surfaces of both contact electrodes facing the semiconductor body 1 are designated 4 and 6, respectively.

Die Kontaktelektroden bestehen üblicherweise aus Kupfer, der Halbleiterkörper aus Silizium. Kupfer und Silizium haben stark voneinander abweichende thermische Ausdehnungskoeffizienten. Um die Reibung zwischen den Kontaktelektroden 3, 5 einerseits und dem Halbleiterkörper andererseits gering zu halten, sind die Kontaktflächen 4, 6 mit je einer Schicht 7, 8 versehen, die aus einer amorphen Kohlenstoff-Metallverbindung besteht. Diese Kohlenstoff-Metallverbindung kann z.B. eine Kohlenstoff-Wolframverbindung oder eine Kohlenstoff-Molybdänverbindung sein. Eine solche amorphe Schicht erhält man, indem die Verbindung z. B. durch Sputtern eines Metall- oder Metallcarbid-Targets in einer Argon-Kohlenwasserstoffatmosphäre abgeschieden wird. Dies kann in einem Hochfrequenz- oder Gleichspannungsfeld geschehen. Solche Verfahren sind an sich bekannt und werden hier daher nicht besonders erläutert. (Man vergleiche z.B. den Artikel von Dimigen und Klages "Microstructure and wear behavious of metal-containing diamond-like coatings" in Surface and Coatings Technology, 49(1991), S. 543-547. Für den erwähnten Zweck hat sich eine Dicke zwischen 0,5 und 10 µm als ausreichend erwiesen.The contact electrodes usually consist of copper, the semiconductor body of silicon. Copper and silicon have very different thermal expansion coefficients. In order to keep the friction between the contact electrodes 3, 5 on the one hand and the semiconductor body on the other hand low, the contact surfaces 4, 6 are each provided with a layer 7, 8, which consists of an amorphous carbon-metal compound. This carbon-metal compound can be, for example, a carbon-tungsten compound or a carbon-molybdenum compound. Such an amorphous layer is obtained by connecting z. B. is deposited by sputtering a metal or metal carbide target in an argon-hydrocarbon atmosphere. This can be done in a radio frequency or DC field. Such methods are known and are known therefore not specifically explained here. (Compare, for example, the article by Dimigen and Klages "Microstructure and wear behavious of metal-containing diamond-like coatings" in Surface and Coatings Technology, 49 (1991), pp. 543-547. For the purpose mentioned, there is a thickness between 0.5 and 10 µm proved sufficient.

Bei den genannten Materialien besteht ein Zusammenhang zwischen spezifischem Widerstand und dem Reibungskoeffizienten der abgeschiedenen Schichten. Dieser Zusammenhang ist ebenfalls aus der obengenannten Literatur bekannt. Mit zunehmendem Metall/Kohlenstoffverhältnis nimmt der Schichtwiderstand ab und der Gleitreibungskoeffizient zu. Das Herstellverfahren erlaubt eine Einstellung dieser Größen. Für die Herstellung einer die elektrischen Eigenschaften des Bauelements unbeeinflußt lassende Gleitschicht empfiehlt sich im Falle des Systems Wolfram/Kohlenstoff ein Atomverhältnis zwischen 0,1 und 0,2. Kann ein bestimmter Widerstand zugelassen werden, ist der Übergang zu kleineren W/C-Werten (<0,05 z.B. 0,02) unkritisch, da der Reibungskoeffizient dadurch weiter verringert wird.In the case of the materials mentioned, there is a connection between the specific resistance and the coefficient of friction of the deposited layers. This connection is also known from the literature mentioned above. As the metal / carbon ratio increases, the sheet resistance decreases and the sliding friction coefficient increases. The manufacturing process allows these sizes to be set. In the case of the tungsten / carbon system, an atomic ratio between 0.1 and 0.2 is recommended for producing a sliding layer which does not influence the electrical properties of the component. If a certain resistance can be allowed, the transition to smaller W / C values (<0.05 e.g. 0.02) is not critical, as this further reduces the coefficient of friction.

Es ist auch möglich, die Schichten auf Kontaktelektroden aufzubringen, die aus einem anderen Metall als Kupfer bestehen, z.B. aus Aluminium oder Silber.It is also possible to apply the layers to contact electrodes made of a metal other than copper, e.g. made of aluminum or silver.

Das Ausführungsbeispiel nach Figur 2 unterscheidet sich von dem nach Figur 1 im wesentlichen dadurch, daß zwischen den Kontaktelektroden 3, 5 und dem Halbleiterkörper 1 Scheiben 10, 14 angeordnet sind, deren thermischer Ausdehnungskoeffizient zwischen dem des Silizium des Halbleiterkörpers und dem des Kupfers der Kontaktelektroden liegt. Die Scheiben 10, 14 können in bekannter Weise aus Wolfram oder Molybdän bestehen. Die Scheibe 14 ist auf ihrer der Kontaktfläche 4 der Kontaktelektrode 3 zugewandten Seite mit einer Schicht 15 und auf ihrer dem Halbleiterkörper 1 zugewandten Seite mit einer Schicht 16 versehen. Beide Schichten bestehen aus der amorphen Kohlenstoff-Metallverbindung. Die Scheibe 14 liegt über die Schichten 15, 16 lediglich unter Druck an der Kontaktelektrode 3 bzw. am Halbleiterkörper 1 an. Anodenseitig ist der Halbleiterkörper stoffschlüssig, z.B. durch Legieren oder Niedertemperaturverbindung, mit einer Scheibe 10 verbunden, deren thermischer Ausdehnungskoeffizient zwischen dem des Siliziums des Halbleiterkörpers und dem des Kupfers der Kontaktelektrode 5 liegt. Die Scheibe 10 hat eine der Kontaktelektrode 5 zugewandte Kontaktfläche 11, die mit einer Schicht 12 versehen ist. Auch die Schicht 12 besteht aus der amorphen Kohlenstoff-Metallverbindung. Die anodenseitige Kontaktelektrode 5 liegt mit ihrer dem Halbleiterkörper zugewandten Kontaktfläche 6 lediglich unter Druck an der Schicht 12 an, ist mit dieser also nicht stoffschlüssig verbunden.The embodiment of Figure 2 differs from that of Figure 1 essentially in that between the contact electrodes 3, 5 and the semiconductor body 1 disks 10, 14 are arranged, the coefficient of thermal expansion of which is between that of the silicon of the semiconductor body and that of the copper of the contact electrodes . The disks 10, 14 can be made of tungsten in a known manner or molybdenum. The disk 14 is provided with a layer 15 on its side facing the contact surface 4 of the contact electrode 3 and with a layer 16 on its side facing the semiconductor body 1. Both layers consist of the amorphous carbon-metal compound. The disc 14 abuts the layers 15, 16 only under pressure on the contact electrode 3 or on the semiconductor body 1. On the anode side, the semiconductor body is cohesively connected, for example by alloying or low-temperature connection, to a disk 10 whose coefficient of thermal expansion lies between that of the silicon of the semiconductor body and that of the copper of the contact electrode 5. The disc 10 has a contact surface 11 facing the contact electrode 5, which is provided with a layer 12. Layer 12 also consists of the amorphous carbon-metal compound. The anode-side contact electrode 5, with its contact surface 6 facing the semiconductor body, only bears on the layer 12 under pressure, and is therefore not cohesively connected to it.

Bei Lastwechseln kann sich daher die Scheibe 14 unter geringer Reibung lateral sowohl relativ zur Kontaktelektrode 3 als auch zum Halbleiterkörper 1 bewegen. Ebenso kann sich die Kontaktelektrode 5 lateral relativ zur Scheibe 10 und zum Halbleiterkörper 1 bewegen.In the event of load changes, the disk 14 can therefore move laterally with little friction both relative to the contact electrode 3 and to the semiconductor body 1. Likewise, the contact electrode 5 can move laterally relative to the disk 10 and the semiconductor body 1.

Das Ausführungsbeispiel nach Figur 3 unterscheidet sich von dem nach Figur 2 im wesentlichen dadurch, daß zwischen dem Halbleiterkörper 1 und der anodenseitigen Kontaktelektrode 5 eine Molybdän- oder Wolframscheibe 18 liegt, die beidseitig mit Schichten 19, 20 aus der amorphen Kohlenstoff-Metallverbindung versehen ist. Dabei liegt die Scheibe 18 über die Schichten 19, 20 lediglich unter Druck am Halbleiterkörper 1 bzw. an der Kontaktelektrode 5 an. Hier ist ein reibungsarmes laterales Gleiten der Scheibe 18 sowohl gegen den Halbleiterkörper 1 als auch gegen die Kontaktelektrode 5 möglich.The embodiment of Figure 3 differs from that of Figure 2 essentially in that between the semiconductor body 1 and the anode-side contact electrode 5 is a molybdenum or tungsten disk 18, which is provided on both sides with layers 19, 20 of the amorphous carbon-metal compound. The disc 18 is only under pressure over the layers 19, 20 on the semiconductor body 1 or on the contact electrode 5. Here, low-friction lateral sliding of the disk 18 is possible both against the semiconductor body 1 and against the contact electrode 5.

Das Atomverhältnis von Metall zu Kohlenstoff muß nicht über die Dicke der Schicht konstant sein. Es kann auf der Oberseite von dem auf der Unterseite abweichen. Im Ausführungsbeispiel nach Figur 4 hat die an der Kontaktelektrode 3 anliegende Teilschicht 21 ein höheres Atomverhältnis von Metall zu Kohlenstoff als die für den gleitenden Druckkontakt vorgesehene Teilschicht 22. Erstere hat somit einen niedrigen Widerstand, letztere einen niedrigen Reibungskoeffizienten. Die Schicht 21 hat vorzugsweise eine größere Dicke als die Schicht 22. Damit läßt sich ein niedriger Kontaktwiderstand mit guten Gleiteigenschaften kombinieren.The atomic ratio of metal to carbon need not be constant over the thickness of the layer. It may differ from the one on the bottom. In the exemplary embodiment according to FIG. 4, the partial layer 21 lying on the contact electrode 3 has a higher atomic ratio of metal to carbon than the partial layer 22 provided for the sliding pressure contact. The former thus has a low resistance, the latter a low coefficient of friction. The layer 21 preferably has a greater thickness than the layer 22. This allows a low contact resistance to be combined with good sliding properties.

Claims (10)

Leistungs-Halbleiterbauelement mit einem Halbleiterkörper (1), mit einer anodenseitigen und einer katodenseitigen Kontaktelektrode (5,3) aus einem Metall, dessen thermischer Ausdehnungskoeffizient von dem des Halbleiterkörpers abweicht und mit mindestens zwei unter Druck stehenden, aufeinanderliegenden Kontaktflächen (4, 6) zwischen dem Halbleiterkörper und den Kontaktelektroden,
dadurch gekennzeichnet, daß mindestens eine der Kontaktflächen (4, 6) mit einer Schicht (7, 8) versehen ist, die aus einer amorphen Kohlenstoff-Metallverbindung besteht.Power semiconductor component with a semiconductor body (1), with an anode-side and a cathode-side contact electrode (5,3) made of a metal, the coefficient of thermal expansion of which differs from that of the semiconductor body and with at least two pressurized, superimposed contact surfaces (4, 6) between the semiconductor body and the contact electrodes,
characterized in that at least one of the contact surfaces (4, 6) is provided with a layer (7, 8) consisting of an amorphous carbon-metal compound. Leistungs-Halbleiterbauelement nach Anspruch 1,
dadurch gekennzeichnet, daß die Schicht (7, 8) auf der dem Halbleiterkörper (1) zugewandten Kontaktfläche (4, 6) der Kontaktelektroden (3, 5) angeordnet ist.Power semiconductor device according to claim 1,
characterized in that the layer (7, 8) is arranged on the contact surface (4, 6) of the contact electrodes (3, 5) facing the semiconductor body (1). Leistungs-Halbleiterbauelement nach Anspruch 1 oder 2,
dadurch gekennzeichnet, daß zwischen mindestens einer der Kontaktelektroden (3, 5) und dem Halbleiterkörper (1) eine Scheibe (10, 14; 14, 18) aus einem Metall angeordnet ist, dessen thermischer Ausdehnungskoeffizient zwischen dem der Kontaktelektroden und dem des Halbleiterkörpers liegt, und daß die Scheibe auf beiden Kontaktflächen mit der Schicht (15, 16; 19, 20) versehen ist.Power semiconductor component according to claim 1 or 2,
characterized in that between at least one of the contact electrodes (3, 5) and the semiconductor body (1) a disc (10, 14; 14, 18) made of a metal is arranged, the coefficient of thermal expansion of which lies between that of the contact electrodes and that of the semiconductor body, and that the disc is provided with the layer (15, 16; 19, 20) on both contact surfaces. Leistungs-Halbleiterbauelement nach Anspruch 1 oder 2,
dadurch gekennzeichnet, daß mit dem Halbleiterkörper (1) anodenseitig eine Scheibe (10) stoffschlüssig verbunden ist, die aus einem Metall besteht, dessen thermischer Ausdehnungskoeffizient zwischen dem des Halbleiterkörpers und dem der anodenseitigen Kontaktelektrode (5) liegt und daß die der Kontaktelektrode (5) zugewandte Kontaktfläche (11) der Scheibe mit der Schicht (12) versehen ist.Power semiconductor component according to claim 1 or 2,
characterized in that a disc (10) is integrally connected to the semiconductor body (1) on the anode side and consists of a metal, whose coefficient of thermal expansion lies between that of the semiconductor body and that of the anode-side contact electrode (5) and that the contact surface (11) of the disk facing the contact electrode (5) is provided with the layer (12). Leistungs-Halbleiterbauelement nach einem der Ansprüche 1 bis 4,
dadurch gekennzeichnet, daß das Metall der Schicht Wolfram ist.Power semiconductor component according to one of Claims 1 to 4,
characterized in that the metal of the layer is tungsten. Leistungs-Halbleiterbauelement nach einem der Ansprüche 1 bis 4,
dadurch gekennzeichnet, daß das Metall der Schicht Molybdän ist.Power semiconductor component according to one of Claims 1 to 4,
characterized in that the metal of the layer is molybdenum. Leistungs-Halbleiterbauelement nach einem der Ansprüche 1 bis 6,
dadurch gekennzeichnet, daß das Atomverhältnis von Metall zu Kohlenstoff zwischen 0,02 und 0,2 liegt.Power semiconductor component according to one of Claims 1 to 6,
characterized in that the atomic ratio of metal to carbon is between 0.02 and 0.2. Leistungs-Halbleiterbauelement nach Anspruch 7,
dadurch gekennzeichnet, daß das Atomverhältnis zwischen 0,1 und 0,2 liegt.Power semiconductor component according to claim 7,
characterized in that the atomic ratio is between 0.1 and 0.2. Leistungs-Halbleiterbauelement nach einem der Ansprüche 1 bis 8,
dadurch gekennzeichnet, daß die Schicht etwa 0,5-10 µm dick ist.Power semiconductor component according to one of Claims 1 to 8,
characterized in that the layer is about 0.5-10 µm thick. Leistungs-Halbleiterbauelement nach einem der Ansprüche 1 bis 9,
dadurch gekennzeichnet, daß das Atomverhältnis von Metall zu Kohlenstoff der Schicht (7, 8; 15, 16; 12; 19, 20) auf ihrer Oberseite von dem auf ihrer Unterseite abweicht.Power semiconductor component according to one of Claims 1 to 9,
characterized in that the atomic ratio of metal to carbon of the layer (7, 8; 15, 16; 12; 19, 20) on its top differs from that on its bottom.
EP94111249A 1993-08-09 1994-07-19 Power semiconductor device with pressure contact Expired - Lifetime EP0638928B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4326733 1993-08-09
DE4326733 1993-08-09

Publications (2)

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EP0638928A1 true EP0638928A1 (en) 1995-02-15
EP0638928B1 EP0638928B1 (en) 1998-10-14

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ID=6494796

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EP94111249A Expired - Lifetime EP0638928B1 (en) 1993-08-09 1994-07-19 Power semiconductor device with pressure contact

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US (1) US5506452A (en)
EP (1) EP0638928B1 (en)
JP (1) JP3452652B2 (en)
DE (1) DE59407080D1 (en)

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US20210384091A1 (en) * 2018-10-19 2021-12-09 Abb Power Grids Switzerland Ag Power Semiconductor Device with Free-Floating Packaging Concept

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Also Published As

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JP3452652B2 (en) 2003-09-29
DE59407080D1 (en) 1998-11-19
JPH0786496A (en) 1995-03-31
US5506452A (en) 1996-04-09
EP0638928B1 (en) 1998-10-14

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