EP1746646A1 - Pressure contact type rectifier - Google Patents
Pressure contact type rectifier Download PDFInfo
- Publication number
- EP1746646A1 EP1746646A1 EP04733151A EP04733151A EP1746646A1 EP 1746646 A1 EP1746646 A1 EP 1746646A1 EP 04733151 A EP04733151 A EP 04733151A EP 04733151 A EP04733151 A EP 04733151A EP 1746646 A1 EP1746646 A1 EP 1746646A1
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- European Patent Office
- Prior art keywords
- pressure
- cap
- contact type
- rectifying device
- lead
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Definitions
- the present invention relates to large current rectifiers used in, for example, electrical components of a vehicle, and relates in detail to package configurations thereof.
- a diode chip as a rectifying device has been fixed by low melting-point metal such as solder.
- solder because the usage of the solder including lead increases the environmental load, a solder-free system has been expected.
- a rectifier having a solder-free structure is, for example, disclosed in Japanese Patent No. 3,198,693 , in which the rectifier is composed of a metal stem having a male thread on the outer circumferential face thereof, a metal cap having a female thread on the inner circumferential face thereof, a lead terminal fixed to an insulator, and a diode chip provided on the stem, and by fitting the stem with the cap, one of the electrodes of the diode chip is electrically connected to the lead terminal, meanwhile the other electrode is connected to the stem.
- An objective of the present invention which is made to solve the above described problem, is to provide a highly reliable pressure-contact type rectifier in which neither the resistance increase nor the wire breakage occurs during its operation.
- a pressure-contact type rectifier is composed of a cap, a lead passing through the cap, supported by an elastic member, a case fittable to the cap, a rectifying device having electrodes, one of which for contacting an end of the lead and the other for contacting the case, and a friction reducer provided on at least one face of the electrodes, wherein the rectifying device is pressure-fixed by the cap and the case.
- the friction reducer in order to decrease the stress concentration in the friction reducer, the friction reducer may be deformed by the stress; therefore, it is preferable that the friction reducer is formed from electrically conductive microparticles.
- the microparticles are composed of at least one of materials including carbon, silver, copper, gold, aluminum, and molybdenum disulfide.
- the mean diameter of the microparticles be from 0.01 ⁇ m to 50 ⁇ m. Furthermore, when the mean diameter is too small, the friction reducer becomes too dense, so that the deformation amount becomes too low, on the other hand, when the mean diameter is too large, the electrical resistance becomes higher; therefore, the mean diameter of the microparticles is suitably from 0.05 ⁇ m to 20 ⁇ m; further, considering reliability, the diameter is more suitably from 0.1 ⁇ m to 10 ⁇ m.
- a pressure-contact type rectifier is composed of a cap, a lead passing through the cap, supported by an elastic member, a case fittable to the cap, a rectifying device having electrodes, one of which for contacting an end of the lead and the other for contacting the case, and a friction reducer provided on at least one face of the electrodes, wherein the rectifying device is pressure-fixed by the cap and the case; and further, the reducer is composed of one or two soft members inserted into at least either a contact area between the rectifying device and the lead edge, or a contact area between the rectifying device and the case.
- a pressure-contact type rectifier is composed of a cap, a lead passing through the cap, supported by an elastic member, a case fittable to the cap, a rectifying device having electrodes, one of which for contacting an end of the lead and the other for contacting the case, and a friction reducer provided on at least one face of the electrodes, wherein the rectifying device is pressure-fixed by the cap and the case; and further a flexible portion is provided on the lead outside the cap, as well as the lead is fixed to the cap.
- a pressure-contact type rectifier is composed of a cap, a lead passing through the cap, supported by an elastic member, a case fittable to the cap, a rectifying device having electrodes, one of which for contacting to an end of the lead and the other for contacting the case, a friction reducer provided on at least one face of the electrodes, and threads, being fittable to each other, provided on the outer circumferential face of the cap and on the circumferential inner face of the case, wherein the rectifying device is pressure-fixed by the cap and the case with the threads being engaged.
- Fig. 1 is a schematic view illustrating a schematic configuration of a pressure-contact type rectifier 10 in Embodiment 1 for carrying out the present invention.
- a lead 2 passes through an insulating cap 1 having a male thread 1a on the outer circumferential face thereof, and is fixed to an insulating elastic member 3 that is made of, for example, silicone rubber.
- the bottom end of the lead 2 forms a lead terminal 2a whose lower face is flat and made of, for example, copper.
- a case 4 having a bottom, in which a female thread 4a that is fittable to the cap 1 is provided on the inner circumferential face thereof, a diode holder 6 whose center is cut away in order to position a diode chip 5 is inserted; thus, the diode chip 5 as a rectifying device is set in the cut-away portion.
- the case 4 is formed from, for example, copper having excellent electrical and thermal conductivity.
- the inner bottom face of the case 4, contacting the diode chip 5, is finished extremely flat in order to enlarge the area for contacting the diode chip 5.
- pressing has been performed with a flat punch so as to induce a plastic flow; consequently, the flatness has been improved.
- the diode holder 6 is, for example, formed from PPS (poly (phenylene sulfide)) resin having highly electrical insulating and heat-resisting characteristics.
- the top and the bottom faces are used as electrodes, and evaporated carbon films as friction reducers 7 are formed on the faces.
- These evaporated carbon films are formed by vacuum evaporation using a resistance heating method; thus, the mean film thickness is approximately 10 ⁇ m.
- the evaporated carbon films having the above mean thickness are not normally formed of continuing films, but formed of stacked products that are constructed from microparticles whose mean diameter is approximately 1 ⁇ m.
- Fig. 2 is a schematic view illustrating a configuration that is configured so as to operate as the pressure-contact type rectifier 10 by the cap 1 and the case 4 being fitted with their threads.
- the friction reducers 7 can relax stress concentration that has occurred due to the friction. Specifically, due to moving or rotating of the microparticles of the evaporated carbon films that construct the friction reducers 7, strain on each contact face is relaxed.
- FIG. 3 is an explanatory view representing the reliability difference between a case (A) in which the friction reducers 7 are formed and a case (B) in which the friction reducers 7 are not formed on the surfaces of the diode chip 5 in this embodiment.
- Fig. 3 it is found that, by providing the friction reducers 7, the rate of trouble occurrence is decreased, so that the reliability of the pressure-contact type rectifier is improved.
- Embodiment 1 an example has been represented in which evaporated carbon films are formed as the friction reducers 7; however, in this embodiment, metal such as silver is evaporated as the friction reducers 7.
- the evaporated films are formed of stacked products that are constructed from microparticles whose mean diameter is 0.5 ⁇ m in such a way that the mean film thickness becomes approximately 5 ⁇ m.
- the friction reducers 7 can relax stress concentration that has occurred due to the friction. As a result, even though an operation is performed for a long period, a pressure-contact type rectifier can be obtained in which burning and the like of the diode chip 5 do not occur.
- the evaporated silver films have been used as the friction reducers 7 in this embodiment, at least one of materials such as copper, gold, aluminum, and molybdenum disulfide may be used as the evaporated films.
- the friction reducers 7 are formed from evaporated carbon films whose mean diameter of the carbon particles is 1 ⁇ m, and whose mean film thickness is 10 ⁇ m; however, in this embodiment, the friction reducers 7 has been formed in which the mean diameter of the carbon particles is varied in the range from 0.005 ⁇ m to 10 ⁇ m, and a pressure-contact type rectifier has been completed; then, the rate of trouble occurrence with respect to its operation time has been measured.
- the mean film thickness of the friction reducers 7 has been set at 10 times as thick as the mean diameter of the particles.
- the rate of the trouble occurrence after one year operation has been assumed to be the rate of the trouble occurrence after ten-year operation.
- Fig. 4 is an explanatory view representing a relationship between the mean particle diameters and the rates of the trouble occurrence after ten-year operation.
- the rate of the trouble occurrence becomes not higher than 10%; thus, the rate is improved from that of 12% without the friction reducers 7.
- the rate of the trouble occurrence becomes not higher than 8%; thus, reliability is further improved. Furthermore, in the range from 0.1 ⁇ m to 10 ⁇ m of the mean particle diameter, the rate of the trouble occurrence becomes not higher than 6%; thus, the rate is found to be further improved.
- the mean particle diameter is larger than 50 ⁇ m, because the contact areas between the friction reducer 7 and the face of the lead 2, and between the diode chip 5 and the case 4 surface decrease, the contact resistance thereof increases, and heat generated during the operation increases, so that burning of the diode chip 5 becomes easy to occur; consequently, the rate of the trouble occurrence increases.
- Fig. 5 is a schematic view illustrating a schematic configuration of a pressure-contact type rectifier 10 in Embodiment 4.
- the lead 2 passes through the insulating cap 1 having the male thread 1 a on the outer circumferential face thereof.
- the lead 2 is fixed to the insulating elastic member 3 that is made of, for example, silicone rubber.
- the bottom end of the lead 2 forms the lead terminal 2a whose lower face is flat, and made of, for example, copper.
- the diode holder 6 whose center is cut away inserted is in order to position the diode chip 5; thus, the diode chip 5 as a rectifying device is set in the cut-away portion.
- the case 4 is formed from, for example, copper having excellent electrical and thermal conductivity.
- the inner face, at the bottom of the case 4, contacting the diode chip 5, is finished extremely flat in order to enlarge the area for contacting the diode chip 5. For example, pressing has been performed with a flat punch so as to induce the plastic flow; consequently, the flatness has been improved.
- the diode holder 6 is, for example, formed from PPS resin having highly insulating and heat-resisting characteristics. Silver plates, for example, are inserted between the lead terminal 2a and the diode chip 5, and between the case 4 and the diode chip 5 as soft members 51a and 51b, respectively.
- the top and bottom faces are used as electrodes, and the evaporated carbon films as the friction reducers 7 are formed on the faces.
- These evaporated carbon films are formed by vacuum evaporation using a resistance heating method; thus, the mean film thickness is approximately 10 ⁇ m.
- the soft members 51a and 51b are elastically deformed; consequently, microirregularities on the contact faces of the lead terminal 2a, the diode chip 5, and the holder cup 4 can be evened with the members.
- the contact area between the diode chip 5 and the lead terminal 2a, or between the diode chip 5 and the case 4 can be increased; thus, electrical and thermal conductivity can be improved.
- Fig. 6 illustrates a pressure-contact type rectifier 10 in Embodiment 6.
- the lead 2 passes through the insulating cap 1 having the male thread 1 a on the outer circumferential face thereof.
- the lead 2 is fixed to the insulating elastic member 3 that is made of, for example, silicone rubber.
- a flexible part 61 is provided on the lead 2 on the upper side of the cap.
- the flexible part 61 has, for example, a structure in which the lead 2 is bent in U-shape.
- the bottom of the lead 2 is the lead terminal 2a whose lower face is flat, and made of, for example, copper.
- the diode holder 6 having a bottom, in which the female thread 4a that is fittable with the cap 1 is provided on the inner circumferential face thereof, the diode holder 6 whose center is cut away is inserted in order to position the diode chip 5; thus, the diode chip 5 is set in the cut-away portion.
- the case 4 is formed from, for example, copper having excellent electrical and thermal conductivity.
- the inner bottom face of the case 4, contacting the diode chip 5 is finished extremely flat in order to enlarge the area for contacting the diode chip 5.
- pressing has been performed with a flat punch so as to induce the plastic flow; consequently, the flatness has been improved.
- the diode holder 6 is, for example, formed from PBT (poly (butylene terephthalate)) resin having highly electrical insulating and heat-resisting characteristics.
- the top and the bottom faces thereof are used as electrodes, and evaporated carbon films as friction reducers are formed on the faces. These evaporated carbon films are formed by vacuum evaporation using the resistance heating method; thus, the mean film thickness is approximately 10 ⁇ m.
- the lead 2 is fixed to the cap 1.
- the adhesive epoxy resin and the like can be used.
- the flexible part 61 is deformed, and absorbs the force; consequently, displacement of the component parts provided lower than the cap 1 can be prevented.
- examples have been represented in which the male thread is formed on the outer circumferential face of the cap, while the female thread that is fittable with the male thread is formed on the inner circumferential face of the case; however, as long as the threads are fittable with the other, the male or the female of the threads may be inverted. Moreover, using a mechanism other than screwing, for example, using pressure cramp, the cap may be fitted with the case.
- Embodiment 1 and Embodiment 2 examples have been represented in which the friction reducers are formed by evaporation; however, using other methods such as that suspension in which powder microparticles are dispersed in a solution is applied onto the reducers and then dried so as to form the friction reducers.
- Embodiment 4 an example has been represented in which silver plates have been used as the soft members; however, an electrically conductive and flexible material such as a metal including copper, aluminum or the like, or electrically conductive rubber may be also used as the soft members.
- an example has been represented in which the flexible part of the lead has the bent structure; however, other flexible structures such as a spring structure or a cylindrical structure may be also used.
- Embodiment 1 to Embodiment 5 explanations are carried out using the diode chip as the rectifying device; however, other chips whose electrical operations are the same as the diode chip, such as a rectifying device to which, for example, an MOS-FET is applied, may be used instead of the diode chip.
- a rectifying device to which, for example, an MOS-FET is applied may be used instead of the diode chip.
- the pressure-contact type rectifier according to the present invention is suitable to vehicle-use electrical components that are operated with large current.
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
- The present invention relates to large current rectifiers used in, for example, electrical components of a vehicle, and relates in detail to package configurations thereof.
- In a conventional large current rectifier, a diode chip as a rectifying device has been fixed by low melting-point metal such as solder. However, because the usage of the solder including lead increases the environmental load, a solder-free system has been expected.
- A rectifier having a solder-free structure is, for example, disclosed in
Japanese Patent No. 3,198,693 - In such a conventional rectifier, solder excluding lead has been realized and utilized; however, a problem has been found that resistance increase, wire breakage, etc. of the diode chip occur in operation.
- An objective of the present invention, which is made to solve the above described problem, is to provide a highly reliable pressure-contact type rectifier in which neither the resistance increase nor the wire breakage occurs during its operation.
- The causes of the above described problems have been investigated by the inventors; as a result, it has been found that heat generates during the operation due to electrical contact resistance at the contact face either between the lead terminal and the diode chip or between the diode chip and the stem, which raises temperature of the lead terminal, the diode chip, and the system, and thus, at this moment, stress concentration occurs, due to friction, at each contact face in accordance with the difference of each thermal expansion coefficient of the materials.
- As a result, it has been found that the problems are induced, such as a electrical conductivity failure at the contact face either between the lead terminal and the diode chip or between the diode chip and the stem, burning of the diode chip due to the resistance increase accompanied by the electrical conductivity failure, or breakage of the diode chip due to the stress, which has encouraged the present invention.
- A pressure-contact type rectifier according to a first aspect of the present invention is composed of a cap, a lead passing through the cap, supported by an elastic member, a case fittable to the cap, a rectifying device having electrodes, one of which for contacting an end of the lead and the other for contacting the case, and a friction reducer provided on at least one face of the electrodes, wherein the rectifying device is pressure-fixed by the cap and the case.
- In such a pressure-contact type rectifier as described above, because the friction reducer, provided at the contact face either between the lead and the rectifying device or between the rectifying device and the case, relaxes the friction due to the temperature rise during the operation, and enables the stress concentration at the contact face to decrease, electrical conductivity failure and burning of the rectifying device due to the resistance increase accompanied by the electrical conductivity failure, or breakage of the rectifying device due to the stress, etc. do not occur; consequently, a highly reliable pressure-contact type rectifier can be obtained.
- In such a way as this, in order to decrease the stress concentration in the friction reducer, the friction reducer may be deformed by the stress; therefore, it is preferable that the friction reducer is formed from electrically conductive microparticles. In order to improve the electrical conductivity at the contact face either between the lead and the rectifying device or between the rectifying device and the case, it is preferable that the microparticles are composed of at least one of materials including carbon, silver, copper, gold, aluminum, and molybdenum disulfide.
- Moreover, in order to simultaneously ensure the deformation amount and the electrical conductivity, it is preferable that the mean diameter of the microparticles be from 0.01 µm to 50 µm. Furthermore, when the mean diameter is too small, the friction reducer becomes too dense, so that the deformation amount becomes too low, on the other hand, when the mean diameter is too large, the electrical resistance becomes higher; therefore, the mean diameter of the microparticles is suitably from 0.05 µm to 20 µm; further, considering reliability, the diameter is more suitably from 0.1 µm to 10 µm.
- A pressure-contact type rectifier according to a second aspect of the present invention is composed of a cap, a lead passing through the cap, supported by an elastic member, a case fittable to the cap, a rectifying device having electrodes, one of which for contacting an end of the lead and the other for contacting the case, and a friction reducer provided on at least one face of the electrodes, wherein the rectifying device is pressure-fixed by the cap and the case; and further, the reducer is composed of one or two soft members inserted into at least either a contact area between the rectifying device and the lead edge, or a contact area between the rectifying device and the case.
- In such a pressure-contact type rectifier, when the cap is fitted to the case, the soft members are deformed, so that the contact areas can be increased with micro-irregularities on the contact faces between the lead and the rectifying device and between the case and the rectifying device being evened with the members; therefore, electrical and thermal conductivity between the lead and the rectifying device, and the rectifying device and the case can be improved.
- A pressure-contact type rectifier according to a third aspect of the invention is composed of a cap, a lead passing through the cap, supported by an elastic member, a case fittable to the cap, a rectifying device having electrodes, one of which for contacting an end of the lead and the other for contacting the case, and a friction reducer provided on at least one face of the electrodes, wherein the rectifying device is pressure-fixed by the cap and the case; and further a flexible portion is provided on the lead outside the cap, as well as the lead is fixed to the cap.
- In such a pressure-contact type rectifier as described above, because the flexible portion is provided on the lead, and the lead is fixed to the cap, even if a force is applied to the lead, acting thereupon outwardly and longitudinally along the lead, the flexible portion stretches so as to absorb the force, and displacement of the component parts provided inside the cap can be prevented; therefore, because the contact area between the lead and the rectifying device does not vary, a highly reliable pressure-contact type rectifier can be obtained in which neither resistance increase nor wire breakage occurs during the operation.
- Moreover, a pressure-contact type rectifier according to a forth aspect of the invention is composed of a cap, a lead passing through the cap, supported by an elastic member, a case fittable to the cap, a rectifying device having electrodes, one of which for contacting to an end of the lead and the other for contacting the case, a friction reducer provided on at least one face of the electrodes, and threads, being fittable to each other, provided on the outer circumferential face of the cap and on the circumferential inner face of the case, wherein the rectifying device is pressure-fixed by the cap and the case with the threads being engaged.
- In such a pressure-contact type rectifier, because a cap and a case are fitted by threads, members other than that are not needed in order to pressure-fix a rectifying device, thereby a pressure-contact type rectifier can be inexpensively manufactured.
-
- Fig. 1
- is a schematic view illustrating a schematic configuration of a pressure-contact type rectifier in
Embodiment 1 according to the present invention; - Fig. 2
- is a schematic view illustrating the pressure-contact type rectifier in
Embodiment 1 according to the present invention; - Fig. 3
- is an explanatory view representing the reliability difference between a case in which friction reducers are provided and a case in which the friction reducers are not provided in
Embodiment 1 according to the present invention; - Fig. 4
- is an explanatory view representing a relationship between mean particle diameters and the reliability in
Embodiment 3 according to the present invention; - Fig. 5
- is a schematic view illustrating a schematic configuration of a pressure-contact type rectifier in
Embodiment 4 according to the present invention; and - Fig. 6
- is a schematic view illustrating a schematic configuration of a pressure-contact type rectifier in
Embodiment 5 according to the present invention. - In order to explain in further detail the present invention, the invention is explained with reference to the attached figures.
- Fig. 1 is a schematic view illustrating a schematic configuration of a pressure-
contact type rectifier 10 inEmbodiment 1 for carrying out the present invention. In Fig. 1, alead 2 passes through aninsulating cap 1 having a male thread 1a on the outer circumferential face thereof, and is fixed to an insulatingelastic member 3 that is made of, for example, silicone rubber. The bottom end of thelead 2 forms alead terminal 2a whose lower face is flat and made of, for example, copper. - Into a
case 4, having a bottom, in which afemale thread 4a that is fittable to thecap 1 is provided on the inner circumferential face thereof, adiode holder 6 whose center is cut away in order to position adiode chip 5 is inserted; thus, thediode chip 5 as a rectifying device is set in the cut-away portion. Thecase 4 is formed from, for example, copper having excellent electrical and thermal conductivity. - The inner bottom face of the
case 4, contacting thediode chip 5, is finished extremely flat in order to enlarge the area for contacting thediode chip 5. For example, pressing has been performed with a flat punch so as to induce a plastic flow; consequently, the flatness has been improved. Thediode holder 6 is, for example, formed from PPS (poly (phenylene sulfide)) resin having highly electrical insulating and heat-resisting characteristics. - In the
diode chip 5, the top and the bottom faces are used as electrodes, and evaporated carbon films asfriction reducers 7 are formed on the faces. These evaporated carbon films are formed by vacuum evaporation using a resistance heating method; thus, the mean film thickness is approximately 10 µm. - The evaporated carbon films having the above mean thickness are not normally formed of continuing films, but formed of stacked products that are constructed from microparticles whose mean diameter is approximately 1 µm. By fitting the male thread 1a into the
female thread 4a to cramp thecap 1 to thecase 4, thediode chip 5 is tightly pressure-contacted with thelead terminal 2a and thecase 4 through theelastic member 3. - Fig. 2 is a schematic view illustrating a configuration that is configured so as to operate as the pressure-
contact type rectifier 10 by thecap 1 and thecase 4 being fitted with their threads. - In the pressure-
contact type rectifier 10 configured such as above, even if temperature of thediode chip 5 and the members contacting thediode chip 5 rises due to the heat generated during the operation, and friction occurs on each contacting face of thelead terminal 2a, thediode chip 5, and thecase 4, thefriction reducers 7 can relax stress concentration that has occurred due to the friction. Specifically, due to moving or rotating of the microparticles of the evaporated carbon films that construct thefriction reducers 7, strain on each contact face is relaxed. - As a result, even though the operation is performed for a long period, a pressure-contact type rectifier can be obtained in which burning and the like of the
diode chip 5 do not occur. Fig. 3 is an explanatory view representing the reliability difference between a case (A) in which thefriction reducers 7 are formed and a case (B) in which thefriction reducers 7 are not formed on the surfaces of thediode chip 5 in this embodiment. In Fig. 3, it is found that, by providing thefriction reducers 7, the rate of trouble occurrence is decreased, so that the reliability of the pressure-contact type rectifier is improved. - In the
above Embodiment 1, an example has been represented in which evaporated carbon films are formed as thefriction reducers 7; however, in this embodiment, metal such as silver is evaporated as thefriction reducers 7. The evaporated films are formed of stacked products that are constructed from microparticles whose mean diameter is 0.5 µm in such a way that the mean film thickness becomes approximately 5 µm. - In the pressure-
contact type rectifier 10 configured such as above, even if temperature of thediode chip 5 and the periphery of thediode chip 5 rises due to heat generated during its operation, and friction occurs on each contact face of thelead terminal 2a, thediode chip 5, and thecase 4, due to movement of the silver microparticles that construct thefriction reducers 7, thefriction reducers 7 can relax stress concentration that has occurred due to the friction. As a result, even though an operation is performed for a long period, a pressure-contact type rectifier can be obtained in which burning and the like of thediode chip 5 do not occur. - Here, although the evaporated silver films have been used as the
friction reducers 7 in this embodiment, at least one of materials such as copper, gold, aluminum, and molybdenum disulfide may be used as the evaporated films. - In
above Embodiment 1, an example has been represented in which thefriction reducers 7 are formed from evaporated carbon films whose mean diameter of the carbon particles is 1 µm, and whose mean film thickness is 10 µm; however, in this embodiment, thefriction reducers 7 has been formed in which the mean diameter of the carbon particles is varied in the range from 0.005 µm to 10 µm, and a pressure-contact type rectifier has been completed; then, the rate of trouble occurrence with respect to its operation time has been measured. - The mean film thickness of the
friction reducers 7 has been set at 10 times as thick as the mean diameter of the particles. In an actual endurance test, in order to accelerate up to 10 times, by an applied voltage being set at 10 times as high as the voltage in the normal test, the rate of the trouble occurrence after one year operation has been assumed to be the rate of the trouble occurrence after ten-year operation. - Fig. 4 is an explanatory view representing a relationship between the mean particle diameters and the rates of the trouble occurrence after ten-year operation. In the range from 0.01 µm to 50 µm of the mean particle diameter, the rate of the trouble occurrence becomes not higher than 10%; thus, the rate is improved from that of 12% without the
friction reducers 7. - Moreover, in the range from 0.05 µm to 20 µm of the mean particle diameter, the rate of the trouble occurrence becomes not higher than 8%; thus, reliability is further improved. Furthermore, in the range from 0.1 µm to 10 µm of the mean particle diameter, the rate of the trouble occurrence becomes not higher than 6%; thus, the rate is found to be further improved.
- When the mean particle diameter is smaller than 0.01 µm, because the
friction reducers 7 come into over-condensed states, and thus the particle movement for relaxing stress concentration due to the friction becomes difficult, breakage of thediode chip 5 becomes easy to occur, and therefore the rate of the trouble occurrence increases. - On the other hand, when the mean particle diameter is larger than 50 µm, because the contact areas between the
friction reducer 7 and the face of thelead 2, and between thediode chip 5 and thecase 4 surface decrease, the contact resistance thereof increases, and heat generated during the operation increases, so that burning of thediode chip 5 becomes easy to occur; consequently, the rate of the trouble occurrence increases. - Fig. 5 is a schematic view illustrating a schematic configuration of a pressure-
contact type rectifier 10 inEmbodiment 4. In Fig. 5, thelead 2 passes through the insulatingcap 1 having the male thread 1 a on the outer circumferential face thereof. Thelead 2 is fixed to the insulatingelastic member 3 that is made of, for example, silicone rubber. The bottom end of thelead 2 forms thelead terminal 2a whose lower face is flat, and made of, for example, copper. Into thecase 4, having a bottom, in which thefemale thread 4a that is fittable to thecap 1 is provided on the inner circumferential face thereof, thediode holder 6 whose center is cut away inserted is in order to position thediode chip 5; thus, thediode chip 5 as a rectifying device is set in the cut-away portion. - The
case 4 is formed from, for example, copper having excellent electrical and thermal conductivity. The inner face, at the bottom of thecase 4, contacting thediode chip 5, is finished extremely flat in order to enlarge the area for contacting thediode chip 5. For example, pressing has been performed with a flat punch so as to induce the plastic flow; consequently, the flatness has been improved. - The
diode holder 6 is, for example, formed from PPS resin having highly insulating and heat-resisting characteristics. Silver plates, for example, are inserted between thelead terminal 2a and thediode chip 5, and between thecase 4 and thediode chip 5 assoft members - In the
diode chip 5, the top and bottom faces are used as electrodes, and the evaporated carbon films as thefriction reducers 7 are formed on the faces. These evaporated carbon films are formed by vacuum evaporation using a resistance heating method; thus, the mean film thickness is approximately 10 µm. By fitting the male thread 1a into the female thread 4ato cramp thecap 1 to thecase 4, thediode chip 5 is tightly pressure-contacted with thelead terminal 2a and thecase 4 via theelastic member 3; thereby, the pressure-contact type rectifier 10 is realized. - In the pressure-
contact type rectifier 10 configured such as above, when thediode chip 5 is tightly pressure-contacted with thelead terminal 2a and thecase 4, thesoft members lead terminal 2a, thediode chip 5, and theholder cup 4 can be evened with the members. As a result, the contact area between thediode chip 5 and thelead terminal 2a, or between thediode chip 5 and thecase 4 can be increased; thus, electrical and thermal conductivity can be improved. - Fig. 6 illustrates a pressure-
contact type rectifier 10 inEmbodiment 6. In Fig. 6, thelead 2 passes through the insulatingcap 1 having the male thread 1 a on the outer circumferential face thereof. Thelead 2 is fixed to the insulatingelastic member 3 that is made of, for example, silicone rubber. Aflexible part 61 is provided on thelead 2 on the upper side of the cap. - The
flexible part 61 has, for example, a structure in which thelead 2 is bent in U-shape. The bottom of thelead 2 is thelead terminal 2a whose lower face is flat, and made of, for example, copper. Into thecase 4, having a bottom, in which thefemale thread 4a that is fittable with thecap 1 is provided on the inner circumferential face thereof, thediode holder 6 whose center is cut away is inserted in order to position thediode chip 5; thus, thediode chip 5 is set in the cut-away portion. - The
case 4 is formed from, for example, copper having excellent electrical and thermal conductivity. The inner bottom face of thecase 4, contacting thediode chip 5 is finished extremely flat in order to enlarge the area for contacting thediode chip 5. For example, pressing has been performed with a flat punch so as to induce the plastic flow; consequently, the flatness has been improved. Thediode holder 6 is, for example, formed from PBT (poly (butylene terephthalate)) resin having highly electrical insulating and heat-resisting characteristics. - In the
diode chip 5, the top and the bottom faces thereof are used as electrodes, and evaporated carbon films as friction reducers are formed on the faces. These evaporated carbon films are formed by vacuum evaporation using the resistance heating method; thus, the mean film thickness is approximately 10 µm. By fitting the male thread 1a into the female thread 4ato cramp thecap 1 to thecase 4, thediode chip 5 is tightly pressure-contacted with thelead terminal 2a and thecase 4 via theelastic member 3. - After that process, using an insulating
adhesive 62, thelead 2 is fixed to thecap 1. As the adhesive, epoxy resin and the like can be used. In the pressure-contact type rectifier 10 configured such as above, even if a force is applied to thelead 2 to pull it upward along the lead, theflexible part 61 is deformed, and absorbs the force; consequently, displacement of the component parts provided lower than thecap 1 can be prevented. - As a result, because it can be prevented that the contact area between the
lead terminal 2a and thediode chip 5 decreases, a highly reliable pressure-contact type rectifier can be obtained in which neither resistance increase nor wire breakage occurs during its operation. - Here, in
Embodiment 1 toEmbodiment 5, examples have been represented in which the male thread is formed on the outer circumferential face of the cap, while the female thread that is fittable with the male thread is formed on the inner circumferential face of the case; however, as long as the threads are fittable with the other, the male or the female of the threads may be inverted. Moreover, using a mechanism other than screwing, for example, using pressure cramp, the cap may be fitted with the case. - In
Embodiment 1 andEmbodiment 2, examples have been represented in which the friction reducers are formed by evaporation; however, using other methods such as that suspension in which powder microparticles are dispersed in a solution is applied onto the reducers and then dried so as to form the friction reducers. - Moreover, in
Embodiment 4, an example has been represented in which silver plates have been used as the soft members; however, an electrically conductive and flexible material such as a metal including copper, aluminum or the like, or electrically conductive rubber may be also used as the soft members. Here, inEmbodiment 5, an example has been represented in which the flexible part of the lead has the bent structure; however, other flexible structures such as a spring structure or a cylindrical structure may be also used. - Furthermore, in
Embodiment 1 toEmbodiment 5, explanations are carried out using the diode chip as the rectifying device; however, other chips whose electrical operations are the same as the diode chip, such as a rectifying device to which, for example, an MOS-FET is applied, may be used instead of the diode chip. - As described above, the pressure-contact type rectifier according to the present invention is suitable to vehicle-use electrical components that are operated with large current.
Claims (7)
- A pressure-contact type rectifier comprising:a cap;a lead passing through the cap and supported by an elastic member;a case fittable to the cap;a rectifying device having electrodes, one of the electrodes contacting an end of the lead and the other electrode contacting the case, and the rectifying device being pressure-fixed by the cap and the case; anda friction reducer provided on at least one face of the electrodes.
- A pressure-contact type rectifier as recited in claim 1,
wherein the friction reducer is composed of electrically conductive microparticles. - A pressure-contact type rectifier as recited in claim 2,
wherein the microparticles include at least one of carbon, silver, copper, gold, aluminum, and molybdenum disulfide. - A pressure-contact type rectifier as recited in claim 2,
wherein the mean diameter of the microparticles is from 0.01 µm to 50 µm. - A pressure-contact type rectifier as recited in claim 1,
further comprising a soft member inserted into at least either the area of contact between the rectifying device and the lead end and between the rectifying device and the case. - A pressure-contact type rectifier as recited in claim 1,
wherein a flexible portion is provided in the lead outside the cap and the lead is fixed to the cap. - A pressure-contact type rectifier as recited in claim 1,
wherein an outer circumferential face of the cap and an inner circumferential surface of the case are threaded and the rectifying device is pressure-fixed by threadingly engaging the cap with the case.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/006877 WO2005112111A1 (en) | 2004-05-14 | 2004-05-14 | Pressure contact type rectifier |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1746646A1 true EP1746646A1 (en) | 2007-01-24 |
EP1746646A4 EP1746646A4 (en) | 2008-09-17 |
EP1746646B1 EP1746646B1 (en) | 2015-03-25 |
Family
ID=35394428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04733151.7A Expired - Fee Related EP1746646B1 (en) | 2004-05-14 | 2004-05-14 | Pressure contact type rectifier |
Country Status (4)
Country | Link |
---|---|
US (1) | US7534979B2 (en) |
EP (1) | EP1746646B1 (en) |
JP (1) | JP4215101B2 (en) |
WO (1) | WO2005112111A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013038493A1 (en) | 2011-09-13 | 2013-03-21 | トヨタ自動車株式会社 | Semiconductor module |
CN103168356B (en) * | 2011-10-13 | 2014-07-02 | 丰田自动车株式会社 | Semiconductor module |
WO2013061392A1 (en) | 2011-10-24 | 2013-05-02 | トヨタ自動車株式会社 | Semiconductor module |
JP6108026B1 (en) * | 2016-12-16 | 2017-04-05 | 富士電機株式会社 | Pressure contact type semiconductor module |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514483A1 (en) * | 1965-06-22 | 1970-03-26 | Siemens Ag | Pressure contact rectifier |
JPH06216267A (en) * | 1993-01-19 | 1994-08-05 | Murata Mfg Co Ltd | Diode |
EP0638928A1 (en) * | 1993-08-09 | 1995-02-15 | Siemens Aktiengesellschaft | Power semiconductor device with pressure contact |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS438377Y1 (en) | 1965-07-22 | 1968-04-13 | ||
JPS438377B1 (en) * | 1966-06-22 | 1968-03-30 | ||
US3581163A (en) * | 1968-04-09 | 1971-05-25 | Gen Electric | High-current semiconductor rectifier assemblies |
JPS52119166A (en) * | 1976-03-31 | 1977-10-06 | Sansha Electric Mfg Co Ltd | Semiconductor device |
JPS6120766Y2 (en) * | 1980-05-07 | 1986-06-21 | ||
JPS56164557A (en) | 1980-05-23 | 1981-12-17 | Ricoh Co Ltd | Tin bump |
JPH0724271B2 (en) * | 1987-07-23 | 1995-03-15 | 株式会社日立製作所 | Semiconductor device |
JPH0593052U (en) | 1992-05-15 | 1993-12-17 | サンケン電気株式会社 | Semiconductor device |
JPH08186188A (en) * | 1995-01-06 | 1996-07-16 | Fuji Electric Co Ltd | Stud-type semiconductor device |
JP2930074B1 (en) * | 1998-06-02 | 1999-08-03 | 富士電機株式会社 | Semiconductor device |
JP4085536B2 (en) * | 1998-11-09 | 2008-05-14 | 株式会社日本自動車部品総合研究所 | ELECTRIC DEVICE, ITS MANUFACTURING METHOD, AND PRESSURE SEMICONDUCTOR DEVICE |
DE19903245A1 (en) * | 1999-01-27 | 2000-08-03 | Asea Brown Boveri | Power semiconductor module |
JP2002043491A (en) | 2000-07-25 | 2002-02-08 | Hitachi Ltd | Manufacturing method of electronic component |
-
2004
- 2004-05-14 WO PCT/JP2004/006877 patent/WO2005112111A1/en not_active Application Discontinuation
- 2004-05-14 JP JP2006508494A patent/JP4215101B2/en not_active Expired - Fee Related
- 2004-05-14 EP EP04733151.7A patent/EP1746646B1/en not_active Expired - Fee Related
- 2004-05-14 US US10/585,351 patent/US7534979B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514483A1 (en) * | 1965-06-22 | 1970-03-26 | Siemens Ag | Pressure contact rectifier |
JPH06216267A (en) * | 1993-01-19 | 1994-08-05 | Murata Mfg Co Ltd | Diode |
EP0638928A1 (en) * | 1993-08-09 | 1995-02-15 | Siemens Aktiengesellschaft | Power semiconductor device with pressure contact |
Non-Patent Citations (1)
Title |
---|
See also references of WO2005112111A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2005112111A1 (en) | 2005-11-24 |
JPWO2005112111A1 (en) | 2008-03-27 |
EP1746646A4 (en) | 2008-09-17 |
JP4215101B2 (en) | 2009-01-28 |
EP1746646B1 (en) | 2015-03-25 |
US20070139979A1 (en) | 2007-06-21 |
US7534979B2 (en) | 2009-05-19 |
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