EP0621641A3 - Heterojunction bipolar transistor and manufacturing method. - Google Patents

Heterojunction bipolar transistor and manufacturing method. Download PDF

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Publication number
EP0621641A3
EP0621641A3 EP94105636A EP94105636A EP0621641A3 EP 0621641 A3 EP0621641 A3 EP 0621641A3 EP 94105636 A EP94105636 A EP 94105636A EP 94105636 A EP94105636 A EP 94105636A EP 0621641 A3 EP0621641 A3 EP 0621641A3
Authority
EP
European Patent Office
Prior art keywords
production method
bipolar transistor
heterojunction bipolar
heterojunction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP94105636A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0621641A2 (en
Inventor
Teruyuki C O Mitsubish Shimura
Masayuki C O Mitsubishi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of EP0621641A2 publication Critical patent/EP0621641A2/en
Publication of EP0621641A3 publication Critical patent/EP0621641A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
EP94105636A 1993-04-21 1994-04-12 Heterojunction bipolar transistor and manufacturing method. Withdrawn EP0621641A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5093476A JPH06310523A (ja) 1993-04-21 1993-04-21 ヘテロ接合バイポーラトランジスタ，及びその製造方法
JP93476/93 1993-04-21

Publications (2)

Publication Number Publication Date
EP0621641A2 EP0621641A2 (en) 1994-10-26
EP0621641A3 true EP0621641A3 (en) 1995-04-12

Family

ID=14083398

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94105636A Withdrawn EP0621641A3 (en) 1993-04-21 1994-04-12 Heterojunction bipolar transistor and manufacturing method.

Country Status (2)

Country Link
EP (1) EP0621641A3 (ja)
JP (1) JPH06310523A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI250640B (en) * 2003-06-19 2006-03-01 Samsung Electronics Co Ltd Bipolar junction transistors and methods of manufacturing the same
KR100498503B1 (ko) 2003-06-19 2005-07-01 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
CN110335818B (zh) * 2019-05-23 2022-11-18 福建省福联集成电路有限公司 一种异质结双极晶体管结构及制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0367698A2 (en) * 1988-10-31 1990-05-09 International Business Machines Corporation Heretojunction bipolar transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0367698A2 (en) * 1988-10-31 1990-05-09 International Business Machines Corporation Heretojunction bipolar transistor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
P.T. GREILING: "Ultrahigh -frequency GaInAs/InP devices and circuits for millimeter wave application", SPIE PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I, vol. 1361, November 1990 (1990-11-01), pages 47 - 58, XP000238888 *
S. SHIKATA ET AL.: "Suppression of the emitter size effect on the current gain of AlGaAs/GaAs HBT by utilizing (NH4)2Sx treatment", PROCEEDINGS OF THE SEVENTEENTH INTERNATIONAL SYMPOSIUM ON GALLIUM ARSENIDE AND RELATED COMPOUNDS, September 1990 (1990-09-01), JERSEY, pages 251 - 256, XP000146771 *
S. TANAKA ET AL.: "Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors", ELECTRONICS LETTERS, vol. 26, no. 18, 30 August 1990 (1990-08-30), ENAGE GB, pages 1439 - 1441, XP000108572 *
W.-S. LEE ET AL.: "Submicrometer self-aligned AlGaAs/GaAs heterojunction bipolar transistor process suitable for digital applications", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 39, no. 12, December 1992 (1992-12-01), NEW YORK US, pages 2694 - 2700, XP000323168, DOI: doi:10.1109/16.168750 *

Also Published As

Publication number Publication date
EP0621641A2 (en) 1994-10-26
JPH06310523A (ja) 1994-11-04

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