EP0609097A2 - Kollektorstruktur eines Transistors zur verbesserten Anpassung und drossellosen Stromversorgungsverbindung - Google Patents

Kollektorstruktur eines Transistors zur verbesserten Anpassung und drossellosen Stromversorgungsverbindung Download PDF

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Publication number
EP0609097A2
EP0609097A2 EP94300653A EP94300653A EP0609097A2 EP 0609097 A2 EP0609097 A2 EP 0609097A2 EP 94300653 A EP94300653 A EP 94300653A EP 94300653 A EP94300653 A EP 94300653A EP 0609097 A2 EP0609097 A2 EP 0609097A2
Authority
EP
European Patent Office
Prior art keywords
collector
external
transistor
matching circuitry
output matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP94300653A
Other languages
English (en)
French (fr)
Other versions
EP0609097B1 (de
EP0609097A3 (de
Inventor
Henry Z. Liwinski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA, SGS Thomson Microelectronics Inc filed Critical STMicroelectronics lnc USA
Publication of EP0609097A2 publication Critical patent/EP0609097A2/de
Publication of EP0609097A3 publication Critical patent/EP0609097A3/de
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

Definitions

  • the present invention relates generally to transistors, and more specifically to a transistor collector structure for improved matching and power supply connection.
  • the power supply has been applied to a transistor collector by a variety of means, depending on the particular circuit application and frequency of operation desired.
  • Common means for supplying power to the transistor collector have included an RF choke, a section of transmission line, and an inductance of a resonance circuit.
  • a transmission line or RF choke In the case where a transmission line or RF choke is used, their parameters must be chosen carefully, usually resulting in compromise. For in-band frequencies, the transmission line or RF choke should not load the collector or throw the transistor into oscillations. For out-of-band frequencies, the transistor must remain stable. In broadband applications, these requirements become even more critical and difficult to achieve. The use of an RF choke can adversely affect achievement of these design goals. For instance, at low frequencies where power gain is high, the inductance represented by the RF choke may contribute to circuit instability.
  • a fixed shunt inductance typically internal to the transistor, is commonly used in transistor power designs as part of the transistor output matching circuit. It provides the benefit of tuning out the effective output capacitance of the transistor, thereby decreasing the transformation ratio required of matching circuitry and increasing transistor efficiency.
  • the predetermined shunt inductance provides the designer very little flexibility.
  • an additional, direct connection is made from the internal collector to the external collector of the transistor by a fixed shunt inductance.
  • the external power supply V S is applied to the transistor collector through an adjustable external shunt element.
  • the adjustable external shunt element allows the user to fine-tune the impedance matching circuit such that the transformation ratio of the output matching circuitry is minimized.
  • Figure 1 shows a bipolar npn power transistor with output circuit according to the prior art.
  • the common emitter transistor shown typically has a die transistor which rests on a highly heat conductive insulator, such as Beryllium Oxide, separating the transistor collector from the heat sink, the case of the device. Because the bottom of the die is a collector, the top of the BeO is also a collector, here noted as internal collector C. External collector C' represents the collector external to the transistor, commonly, the collector lead, outside the packaged transistor.
  • a highly heat conductive insulator such as Beryllium Oxide
  • Internal collector C is connected to external collector C' by collector bonding wire and transmission line inductance L C . Also, internal collector C is connected through shunt inductance L SHUNT and bypass capacitor CAP1 to ground, inside the transistor package. The emitter of transistor T is wire bonded to ground potential. External collector C' is connected through MATCH to R L load which is typically 50 ohms; MATCH circuitry provides impedance adjustment external to transistor T. L C , MATCH, and L SHUNT , together, form the matching network required to address the impedance mismatch between the required internal transistor load and R L , the external load. Power supply, V S , is applied to the transistor collector through RF choke, L CHOKE , and is bypassed by CAP2.
  • L CHOKE represents the inductance of the RF choke or transmissions line by which power supply V S is applied to the collector of the transistor.
  • the RF choke represents an ideal choke.
  • the presence of even an ideal RF choke may affect transistor stability, especially at low frequencies where bipolar transistor gain is high.
  • RF choke inductance may form resonant circuits with adjacent circuit capacitors at various frequencies.
  • FIG. 2 is a transistor circuit schematic according to the present invention.
  • the schematic is similar to the schematic shown in Figure 1, except that L CHOKE is absent and there is a second separate external collector, C".
  • Internal collector C is seated on an insulator such as Beryllium Oxide (BeO) and is connected to external collector C" by L SHUNT1 .
  • Both L C and L SHUNT1 are internal to the transistor as indicated by the dashed lines shown in Figure 2 .
  • Power supply V S is applied through externally adjustable shunt element L SHUNT2 .
  • external collector C and internal shunt element LS HUNT1 .
  • Capacitor CAP2 is a bypass capacitor.
  • L C , L SHUNT1 , L SHUNT2 , and MATCH make up the matching circuit which is responsible for transforming the impedance of external load R L so that at internal collector C, the transistor sees the proper impedance necessary to develop required power at certain frequencies and efficiencies.
  • the invention shown in Figure 2 provides an additional, direct connection through L SHUNT1 from external collector C" to internal collector C. This connection allows for elimination of the RF choke of Figure 1 if shunt inductance is used as a first matching element.
  • L CHOKE might be a cause of circuit instabiliity and/or effect impedance matching capabilities, so the removal of L CHOKE is a benefit.
  • L C , L SHUNT1 + L SHUNT2 and MATCH together form the impedance matching circuitry. Since L SHUNT2 is adjustable, it may be used to fine-tune the impedance matching circuit.
  • the transistor shown in Figure 2 is for a transistor die or a group of dice with a relatively short collector area.
  • the use of two or more shunts is a better choice and assures more equal participation of all dice in power generation.
  • An implementation of multiple adjustable shunts is more practical for a hybrid transistor than for a packaged transistor.
  • FIG. 3 shows a common-emitter, four die transistor, with two adjustable shunts.
  • the internal collector C which rests on top of an insulator such as Beryllium Oxide (BeO), is connected to external collector C' by bonding wires and transmission line inductance L C .
  • internal collector C is connected to external collectors C1' and C2' through the combination of bondwires and transmission line inductances L SHUNT1 and L SHUNT2 , respectively.
  • CAP1 serves as a bypassing capacitor; CAP2 is a decoupling capacitor.
  • L' SHUNT1 and L' SHUNT2 provide adjustable shunt matching capability. Together, L C , L SHUNT1 , L SHUNT2 , L' SHUNT1 , L' SHUNT2 , and MATCH make up the transistor output matching circuitry.
  • the alternate preferred embodiment of the invention shown in Figure 3 provides additional, direct connections from the external collector to the internal collector of a transistor.
  • Such direct connections allow the RF choke of the prior art, with its inherent difficulties, to be eliminated.
  • the L CHOKE of Figure 1 is often the cause of circuit instability and/or effect impedance matching problems. Without this RF choke inductance, transistor stability, especially at low frequencies where gain is high, may be improved.
  • the described invention enables greater flexibility in matching the internal load of a transistor with the external load R L through externally adjustable shunt elements, such as L' SHUNT1 and L' SHUNT2 shown in Figure 3 .
  • L C , L SHUNT1 , L' SHUNT1 , L SHUNT2 , L' SHUNT2 , and MATCH comprise the output matching circuitry for the transistor and transforms the impedance of external load R L so that the transistor sees the proper impedance to develop required power at required frequencies and efficiencies.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
EP94300653A 1993-01-29 1994-01-28 Kollektorstruktur eines Transistors zur verbesserten Anpassung und drossellosen Stromversorgungsverbindung Expired - Lifetime EP0609097B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11386 1993-01-29
US08/011,386 US5424676A (en) 1993-01-29 1993-01-29 Transistor collector structure for improved matching and chokeless power supply connection

Publications (3)

Publication Number Publication Date
EP0609097A2 true EP0609097A2 (de) 1994-08-03
EP0609097A3 EP0609097A3 (de) 1995-07-26
EP0609097B1 EP0609097B1 (de) 1999-05-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP94300653A Expired - Lifetime EP0609097B1 (de) 1993-01-29 1994-01-28 Kollektorstruktur eines Transistors zur verbesserten Anpassung und drossellosen Stromversorgungsverbindung

Country Status (3)

Country Link
US (1) US5424676A (de)
EP (1) EP0609097B1 (de)
DE (1) DE69418224T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9450283B2 (en) 2004-12-21 2016-09-20 Ampleon Netherlands B.V. Power device and a method for controlling a power device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009146439A1 (en) * 2008-05-30 2009-12-03 Colorado State University Research Foundation System, method and apparatus for generating plasma

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566212A (en) * 1969-02-24 1971-02-23 Trw Semiconductors Inc High temperature semiconductor package
FR2279255A1 (fr) * 1973-03-02 1976-02-13 Radiotechnique Compelec Amplificateur fonctionnant dans la gamme des hyperfrequences
US3869677A (en) * 1973-10-18 1975-03-04 Rca Corp Microwave transistor carrier for common base class a operation
US3869678A (en) * 1973-12-18 1975-03-04 Rca Corp Multiple transistor microwave amplifier
US4119997A (en) * 1974-08-13 1978-10-10 Honeywell Inc. DOT-AND logic gate device including multiemitter transistor
US4376287A (en) * 1980-10-29 1983-03-08 Rca Corporation Microwave power circuit with an active device mounted on a heat dissipating substrate
US4525638A (en) * 1984-01-16 1985-06-25 Motorola, Inc. Zener referenced threshold detector with hysteresis
IT1188335B (it) * 1986-02-06 1988-01-07 Sgs Microelettronica Spa Dispositivo di controllo in retroazione per lo spegnimento di un transistore
US4849656A (en) * 1987-06-11 1989-07-18 Unitrode Corp. Power-on detection circuit
JPH02130008A (ja) * 1988-11-09 1990-05-18 Toshiba Corp 高周波電力増幅回路
US5164683A (en) * 1991-10-21 1992-11-17 Motorola, Inc. RF amplifier assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9450283B2 (en) 2004-12-21 2016-09-20 Ampleon Netherlands B.V. Power device and a method for controlling a power device

Also Published As

Publication number Publication date
DE69418224D1 (de) 1999-06-10
DE69418224T2 (de) 1999-11-25
US5424676A (en) 1995-06-13
EP0609097B1 (de) 1999-05-06
EP0609097A3 (de) 1995-07-26

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