EP0588792A1 - Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing - Google Patents

Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing

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Publication number
EP0588792A1
EP0588792A1 EP91920043A EP91920043A EP0588792A1 EP 0588792 A1 EP0588792 A1 EP 0588792A1 EP 91920043 A EP91920043 A EP 91920043A EP 91920043 A EP91920043 A EP 91920043A EP 0588792 A1 EP0588792 A1 EP 0588792A1
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EP
European Patent Office
Prior art keywords
dopant
source
dopant source
planar
recited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP91920043A
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German (de)
French (fr)
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EP0588792A4 (en
Inventor
John C. Wolfe
Wanda Zagozdzon-Wosik
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University of Houston System
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University of Houston System
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Publication of EP0588792A1 publication Critical patent/EP0588792A1/en
Publication of EP0588792A4 publication Critical patent/EP0588792A4/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Definitions

  • the present invention relates to methods and apparatus for doping silicon wafers. More particularly, the present invention relates to methods and apparatus for doping a silicon wafer using a novel planar dopant source placed in close proximity to the silicon wafer during rapid thermal processing. Description of Related Art
  • CVD chemical vapor deposition
  • ICs integrated circuits
  • VLSI very large scale integration
  • ULSI ultra large scale integration
  • ICs integrated circuits
  • RTP rapid thermal processing
  • doping is based on ion implantation which provides well-controlled dopant concentration but which has to be followed by thermal annealing for postimplantation damage removal and dopant activation.
  • Formation of shallow junctions using ion implantation results in asymmetrical structures due to shadowing effects and it may also be responsible for lateral channeling of implanted ions thereby affecting the device dimensions; thus very complicated implantation scheme is required to alleviate these effects.
  • Implantation used by many chip producers for shallow junction formation in deep and narrow trench structures is an increasingly difficult fabrication step. Such a step always results in non-uniform dopant distribution along the walls and .the bottom of such structures, thereby detrimentally affecting device operation.
  • RTD rapid thermal diffusion
  • Planar solid sources require special thermal preparation which ensures sufficient dopant supply during furnace processes but not necessarily enough supply to obtain reproducible doping during RTD.
  • the short time of RTD does not allow for thermal decomposition of the bulk material of the solid source or for solid diffusion of dopant to the source surface and subsequent transport to the processed wafer followed by diffusion.
  • dopant evaporation is limited by the surface efficiency and cannot be easily liberated.
  • Doping from doped polysilicon gives very good low resistivity layers bur their major applications involve bipolar IC's, not KCS-
  • GILD Gas immersion laser doping
  • plasma doping are other methods for low temperature dopant introduction.
  • GILD is based on melting and regrowth of silicon and simultaneous dopant diffusion during laser irradiation, while plasma doping relies on a glow discharge using a dopant containing gas. Both methods are still in research stages, with possible future application in planar junction fabrication rather than in structures such as required in trench technology.
  • VLSI and ULSI ICs Another important problem related to a quality of high density semiconductor circuits (VLSI and ULSI ICs) is the requirement for low density of defects, both crystallographic, (i. e. , related to crystal damage and presence of impurities) and surface originated (i.e. , defects related to particulate contaminations).
  • a fabrication technology must rely on integrated processes, where a sequence of processes is performed in a micro- factory with single wafers undergoing various operations, preferably in a vacuum.
  • RTD may be used as an important step incorporated in a such a technology provided that such a process itself does not introduce any contaminants and is compatible with the device technology.
  • GILD and plasma doping offer the best prospects for single wafer processing applications; however, limitations with respect to doping of non-planar structures exist in these processes.
  • the present invention provides a new process of RTD for shallow, heavily doped planar junctions as well as trench junctions in standard (non in-situ) IC technology
  • a major new feature of the process described herein is use of an active surface of a planar dopant source, built either using a dopant source in a form of doped oxides, spin-on dopant deposited on a holder wafer (instead of direct deposition on the processed silicon wafer), or use of high vapor pressure planar sources which have to be activated by an etch-back process used for removal of the dopant depleted surface.
  • the present invention provides a new diffusion source for RTP diffusion which can be placed in proximity to a processed silicon wafer with the active layer facing that silicon wafer.
  • Lamps used in RTP to provide radiation energy, illuminate both the dopant source and silicon wafer so that dopant may be supplied from the source via vaporization and transported to the silicon surface due to the concentration gradient. Dopant is liberated from the deposited dopant source which means that only the surface layer (a few thousand angstroms thick) is active. This obviates the need for thermal decomposition of a bulk material containing dopants, as is required in cases involving planar solid sources (Note: this is an especially critical step for As and P).
  • a major advantage of the process described herein is its useful application not only in shallow planar junction fabrication but also in doping trench capacitors. The described process involves non-contact diffusion which ensures extreme cleanliness.
  • the described process also offers advantages as it does not require deposition of any layers containing dopant in a chemical suspension.
  • the process described herein is a perfect candidate for single wafer multiprocessing. This technology results in low contamination and particulate levels allowing for high yields in VLSI and ULSI ICs.
  • FIG. 1 depicts deposition of a spin-on dopant directly on a silicon wafer
  • FIG. 2 depicts a spin-on source deposited on a holder wafer positioned over a silicon wafer as taught by the present invention
  • FIG. 3 is a schematic cross-sectional view of an RTP reactor with a silicon wafer placed on quartz bolts; and FIG. 4 is a schematic cross-sectional view of RTP diffusion with a novel diffusion source according to the teachings of the present invention.
  • a dopant source is produced using either a rigid disc holder, which serves as a substrate for deposition of a dopant in a form of a spin-on dopant source, doped oxides, or by using a planar dopant source with high dopant vapor pressure.
  • a dopant source may be used to spin coat the holder wafer and to become a new planar dopant source.
  • dopant spun on a holder wafer has to be prebaked at a low temperature, according to the manufacturer' s specifications, in order to evaporate all solvents.
  • doped oxides any methods used in silicon technology for deposition of such oxides (CVD, LPCVD, PECVD) may be implemented for dopant source fabrication.
  • Doped oxides may be also obtained by ion implantation into undoped, deposited oxides.
  • a third category of dopant sources is planar dopant sources having high vapor pressure of compounds. This latter characteristic allows efficient evaporation of dopant from the surface region of the source.
  • FIG. 1 depicts direct deposition of a spin- on dopant 2 onto a silicon wafer 4, a prior art technique.
  • FIG. 2 shows a dopant source 6 comprising a spin-on dopant deposited on a holder wafer, which holder wafer is physically distinct from a silicon wafer 4 to be ultimately doped.
  • the dopant source and a silicon wafer are positioned in close proximity to each other for further processing.
  • This positioning may be effected by any number of support means, such as quartz bolts, which are conventionally used to support processed wafers on a quartz tray during RTP.
  • quartz bolts When such bolts are used, the degree of mutual proximity is determined by the height of flanges grooved on the bolts. Both wafers are simultaneously heated by lamps and dopant is liberated from the active surface of dopant source and transported to the silicon surface where solid state diffusion into the silicon wafer takes place.
  • FIGs. 3 and 4 details regarding an embodiment of an apparatus according to the teachings of the present invention may be seen.
  • an RTP reactor consisting of a water cooled outer
  • SUBSTITUTE SHEET portion 8 a quartz tube 10 positioned within the portion 8, and lamps 12 heating water surrounding tube 10 within portion 8 is shown.
  • a quartz tray 14 is positioned within quartz tube 10 by conventional means. Quartz bolts 16 on tray 14 provide means for supporting a silicon wafer 4 only (such as is shown in FIG. 3) or a diffusion source wafer with spin-on source 6 according to the teachings of the present invention together with a silicon wafer 4 (such as is shown in FIG. 4).
  • a silicon wafer 4 such as is shown in FIG. 3
  • a diffusion source wafer with spin-on source 6 according to the teachings of the present invention together with a silicon wafer 4 (such as is shown in FIG. 4).
  • FIG. 4 silicon wafer 4
  • other support mechanisms and environments in which RTP can be effected can be constructed by those skilled in the art and can be suitably employed to practice embodiments of the present invention.
  • the distance between the dopant source and silicon wafer is an important parameter which determines dopant transport during RTD. With reference to the specific embodiment shown in FIG. 4, due to high durability of quartz bolts at high temperature, this distance does not change in time, providing in this way good reproducibility of the diffusion processes.
  • the working silicon wafer 4 may be located above or below the dopant source 6 depending on the design of a rapid thermal processors. Temperature of the processed silicon wafer is controlled by the lamp intensity activated by e. g. , a computer operated system (not shown) and it can be measured by pyrometer (not shown) pointing at its back side, as in typical RTP steps. Gas atmosphere such as N-, O, or N.,+0, in the RTP oven can also be maintained by a computer system.
  • Typical temperatures are up to 1150 ⁇ C and process times up to 300 seconds, and may be adjusted according to device requirements. Higher diffusion temperatures are not necessary for shallow junction formation and, moreover, slip lines in silicon wafers may be more easily generated during such processes.
  • the process has to include surface activation of dopant source. This may be readily obtained by etching back a
  • SUBSTITUTE SHEET thin layer of deposited dopant source whether in the form of spin-on source or doped oxides, as well as by etching a thin layer of high vapor pressure planar dopant source.
  • plasma-assisted etching such as plasma etching, reactive ion etching or sputtering, may be used to remove a layer depleted of dopant and to expose a new, dopant-rich layer. This is an important step in such a rapid thermal diffusion process.
  • the proposed new RTD process uses a wafer-shaped rigid material, mechanically stable at high temperature, as a holder for deposited dopant or a planar dopant source which also must be thermomechanically durable.
  • source warpage which is induced by a temperature gradient along the wafer radius during warm-up, steady state and cool-down periods, can be prevented and constant distance between the dopant source and the silicon wafer can be maintained. Therefore, dopant diffusion from the dopant source to the surface of a processed silicon wafer is uniform as may be monitored by a small variation of sheet resistance (Rs) within the whole wafer.
  • Silicon wafers, planar solid sources commercially available, or other rigid materials such as quartz or ceramics may be used as holder discs or, alternatively, a planar dopant source with high vapor pressure may be used as an off-the-shelf dopant. It should be noted, however, that differences exist between diffusion parameters obtained .for various dopants depending on the disc types.
  • solid source discs are less susceptible to temperature stress than silicon wafers, and thus they can be used as a spin-on holders in a large number of diffusion processes.
  • quartz or ceramic materials can be used as holders for dopant sources. The number of processes where a single wafer can be reused as a dopant source is smaller for silicon wafers as compared to other holders such as solid source discs, ceramics or quartz. However, one silicon wafer may be used in several processes depending on the
  • SUBSTITUTESHEET temperature conditions of the process Low temperatures increase the lifetime of such a source, while high temperatures accelerate the source warpage leading to its degradation. For this reason the use of types of holders other than silicon wafers is more economical if they are to be used to fabricate integrated circuits on a large scale.
  • planar solid dopant sources only the sources designed for high temperature processes may be used as durable diffusion source wafers. In the case of low temperature planar solid sources, the wafer warpage induced by stress generated during RTP limits use of a single source to processes having a few steps only. With respect to thermomechanical stability, such sources are comparable to the silicon wafers used as diffusion- source wafers.
  • Diffusion of phosphorus into silicon is very reproducible provided that a silicon wafer or other non- porous rigid material is used as a holder disk supporting the active dopant layer in the dopant source.
  • a spin-on dopant source may be also deposited on a planar solid source used as a holder wafer, but saturation of the solid source with liquid spin-on dopant is required for high dopant concentration processes in such a case.
  • the silicon wafer can not be used as a holder for dopant since there is no effective evaporation of the As source.
  • arsenic may be diffused at high dopant concentrations provided that the spin-on dopant is used on the planar solid arsenic source.
  • the roughness of the solid source makes the effective surface of the dopant layer large as compared to planar area of a given disc diameter, which
  • SUBSTITUTESHEET increases the volume concentration of dopant.
  • the possibilities of the influence of oxygen from the planar solid source on As diffusion cannot be excluded either. All of the foregoing conclusions are based on sheet resistance and junction depth measurements obtained in all dopant diffusions under various thermal conditions.
  • the proposed new RTP diffusion whether using silicon wafers, solid-source discs or other rigid dopant holders, allows defect-free introduction of dopants into silicon in a clean (with respect to spin-on sources deposited directly on the surface) and reproducible (with respect to solid sources) way for all dopants.
  • the active dopant source in the proposed RTD, is limited to the surface region.
  • the new diffusion sources may be used in various temperature and time conditions without any additional thermal steps, except for standard low temperature prebaking used to evaporate dopant solvents in the case of sources implementing spin-on dopants.
  • the new diffusion process may be used in production of VLSI silicon integrated circuits, where . shallow junctions (less than 0.1 micron) are required.
  • this diffusion method may be especially advantageous for the fabrication of trench capacitors, since the dopant source is located in close proximity to silicon wafer but is not directly deposited on the object wafer.
  • this RTD method may be used both in bipolar and MOS VLSI/ULSI technologies.

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Abstract

L'invention concerne, en partie, un nouveau procédé pour la diffusion d'un dopant, à la fois du type p (p.ex. B) et de type n (p.ex., P, As), dans des tranches de silicium, en utilisant un traitement thermique rapide (PTR). Le procédé consiste à utiliser une couche superficielle d'un nouveau dopant plan tel qu'une source de dopant actif. Une telle source est produite en utilisant soit une tranche support rigide avec un dopant "spin-on" ou des oxydes dopés par déposition en phase gazeuse par procédé chimique déposés sur sa surface, soit une source solide plane de haute pression ayant une surface qui a été activée par attaque à sec ou attaque par pulvérisation. Une telle source de dopant est placée à proximité d'une tranche de silicium traité de manière que sa surface active soit en regard de la surface de la tranche de silicium pendant le traitement thermique rapide. Tant la tranche de silicium que la source de dopant sont chauffées à l'aide de lampes émettant de la lumière pour provoquer le transport du dopant depuis la source de dopant à la surface de silicium. La source de dopant peut être produite en utilisant soit des tranches de silicium, des plaques de quartz ou de céramique soit des sources de diffusion solides et planes qui sont disponibles dans le commerce sous la forme de disques solides contenant des composés qui recèlent différents atomes de dopant (p.ex. B, P et As).The invention relates, in part, to a novel method for the diffusion of a dopant, both p-type (eg B) and n-type (eg, P, As), in wafers silicon, using rapid heat treatment (PTR). The method consists in using a surface layer of a new planar dopant such as a source of active dopant. Such a source is produced using either a rigid support wafer with a "spin-on" dopant or oxides doped by deposition in the gaseous phase by chemical process deposited on its surface, or a planar solid source of high pressure having a surface which has been activated by dry attack or spray attack. Such a dopant source is placed near a treated silicon wafer so that its active surface faces the surface of the silicon wafer during the rapid heat treatment. Both the silicon wafer and the dopant source are heated using light emitting lamps to cause the dopant to be transported from the dopant source to the silicon surface. The dopant source can be produced using either silicon wafers, quartz or ceramic plates or solid and planar diffusion sources which are commercially available in the form of solid discs containing compounds which contain different atoms of dopant (eg B, P and As).

Description

METHOD AND APPARATUS FOR DOPING SILICON WAFERS USING A SOLID DOPANT SOURCE AND RAPID THERMAL PROCESSING Field of the Invention The present invention relates to methods and apparatus for doping silicon wafers. More particularly, the present invention relates to methods and apparatus for doping a silicon wafer using a novel planar dopant source placed in close proximity to the silicon wafer during rapid thermal processing. Description of Related Art
Doped layers, in silicon technology, have been traditionally produced using ion implantation followed by thermal annealing, and by dopant diffusion from gaseous sources, chemical vapor deposition (CVD) doped oxides, poiysilicon sources and so on. In very large scale integration (VLSI) and ultra large scale integration (ULSI) integrated circuits (ICs) the small sizes connected with individual devices impose new requirements for dopant distributions demanding that junctions be very shallow and heavily doped. To ensure shallow junction fabrication, rapid thermal processing (RTP), with its high temperature annealing realized in a very short period of time, has been introduced as a substitute for furnace processing.
In the present silicon technology for VLSI and ULSI devices, doping is based on ion implantation which provides well-controlled dopant concentration but which has to be followed by thermal annealing for postimplantation damage removal and dopant activation.
SUBSTITUTESHEET Formation of shallow junctions, especially those doped with light atoms (e. g., B), is difficult due to channeling effects which are avoided by means of substrate preamorphisation. The removal of crystallographic defects, especially those at the amorphous/crystalline (a/c) interface, requires proper thermal processing and is not always successful.
The removal of crystallographic defects, especially end-of-range defects at the amorphous/crystalline (a/c) interface, requires relatively high temperature processing which has to be done however in a very short time in order to obtain small penetration depth of implanted dopants. Since the requirements for shallow junction formation impose limitations on a temperature- time product during annealing steps, the elimination of defects becomes very difficult; as a consequence, defect related excessive leakage currents in the junctions may deteriorate device operation. Also, ion implantation can be the reason for degradation of gate oxide at the edges of source and drain regions in MOSFETs. In addition, if lower temperatures are used for smaller junctions (xj ) the resistivity of doped layers increases due to smaller dopant activation (because of lower solid solubility of dopants at these temperatures), thus reducing current drive capability and device performance.
Formation of shallow junctions using ion implantation results in asymmetrical structures due to shadowing effects and it may also be responsible for lateral channeling of implanted ions thereby affecting the device dimensions; thus very complicated implantation scheme is required to alleviate these effects.
Implantation used by many chip producers for shallow junction formation in deep and narrow trench structures is an increasingly difficult fabrication step. Such a step always results in non-uniform dopant distribution along the walls and .the bottom of such structures, thereby detrimentally affecting device operation.
SUBSTITUTESHEET Another doping method that overcomes the difficulties related to shallow junction fabrication is rapid thermal diffusion (RTD). RTD is a defect-free process that gives well- controlled dopant concentrations. The main advantage of a diffusion process over ion implantation is that it does not introduce structural damage to single crystals. Further, the process complications related to elimination of channeling effects during ion implantation do not exist in diffusion processes. Diffusion sources such as spin- on dopants described in U.S. Patent Nos. 4,468,260 and 4, 729, 962; planar solid dopant sources such as described in U. S. Patent No. 4, 661, 177; doped polysilicon; as well as ion implanted suicides along with ion implanted metals, which form suicide with simultaneous dopant diffusion; have all heretofore been reported. All of these sources and methods associated with their use have certain disadvantages and limitations. Spin-on dopants, deposited directly on the silicon surface, produce a planar layer which must be removed (deglazed) after the diffusion process. Such a deglazing step may dramatically decrease the initial oxide thickness in some regions of devices. In addition, a residual, soft, HF- msoluble, and carbon rich film is left after such a RTD. This film may adversely affect operation of electronic devices. Planar solid sources require special thermal preparation which ensures sufficient dopant supply during furnace processes but not necessarily enough supply to obtain reproducible doping during RTD. The short time of RTD does not allow for thermal decomposition of the bulk material of the solid source or for solid diffusion of dopant to the source surface and subsequent transport to the processed wafer followed by diffusion. Thus, dopant evaporation is limited by the surface efficiency and cannot be easily liberated. Doping from doped polysilicon gives very good low resistivity layers bur their major applications involve bipolar IC's, not KCS-
SUBSTITUTE SHEET based circuits. Implantation of dopants into refractory metals or their suicides looks very promising but have foreseeable applications in production of planar junctions only, and more in MOS devices than in bipolar technology, due to basic differences between these structures.
Gas immersion laser doping (GILD) and plasma doping are other methods for low temperature dopant introduction. GILD is based on melting and regrowth of silicon and simultaneous dopant diffusion during laser irradiation, while plasma doping relies on a glow discharge using a dopant containing gas. Both methods are still in research stages, with possible future application in planar junction fabrication rather than in structures such as required in trench technology.
Another important problem related to a quality of high density semiconductor circuits (VLSI and ULSI ICs) is the requirement for low density of defects, both crystallographic, (i. e. , related to crystal damage and presence of impurities) and surface originated (i.e. , defects related to particulate contaminations). To increase the reliability and yields of advanced ICs, a fabrication technology must rely on integrated processes, where a sequence of processes is performed in a micro- factory with single wafers undergoing various operations, preferably in a vacuum. RTD may be used as an important step incorporated in a such a technology provided that such a process itself does not introduce any contaminants and is compatible with the device technology. Among all reported diffusion processes, GILD and plasma doping offer the best prospects for single wafer processing applications; however, limitations with respect to doping of non-planar structures exist in these processes.
SUMMARY OF THE INVENTION The present invention provides a new process of RTD for shallow, heavily doped planar junctions as well as trench junctions in standard (non in-situ) IC technology
SUBSTITUTESHEET and in single wafer multiprocessing. A major new feature of the process described herein is use of an active surface of a planar dopant source, built either using a dopant source in a form of doped oxides, spin-on dopant deposited on a holder wafer (instead of direct deposition on the processed silicon wafer), or use of high vapor pressure planar sources which have to be activated by an etch-back process used for removal of the dopant depleted surface. Thus, the present invention provides a new diffusion source for RTP diffusion which can be placed in proximity to a processed silicon wafer with the active layer facing that silicon wafer. Lamps, used in RTP to provide radiation energy, illuminate both the dopant source and silicon wafer so that dopant may be supplied from the source via vaporization and transported to the silicon surface due to the concentration gradient. Dopant is liberated from the deposited dopant source which means that only the surface layer (a few thousand angstroms thick) is active. This obviates the need for thermal decomposition of a bulk material containing dopants, as is required in cases involving planar solid sources (Note: this is an especially critical step for As and P). A major advantage of the process described herein is its useful application not only in shallow planar junction fabrication but also in doping trench capacitors. The described process involves non-contact diffusion which ensures extreme cleanliness. The described process also offers advantages as it does not require deposition of any layers containing dopant in a chemical suspension. The process described herein is a perfect candidate for single wafer multiprocessing. This technology results in low contamination and particulate levels allowing for high yields in VLSI and ULSI ICs.
Accordingly, it is an object of the present invention to provide a new process of RTD for shallow, heavily doped planar junctions as well as trench
SUBSTITUTE SHEET capacitors in standard (non-in-situ) IC technology and in single wafer multiprocessing.
BRIEF DESCRIPTION OF THE DRAWINGS Other objects, advantages and novel features of the present invention will become apparent from the following detailed description of the invention when considered in conjunction with the accompanying drawings wherein:
FIG. 1 depicts deposition of a spin-on dopant directly on a silicon wafer; FIG. 2 depicts a spin-on source deposited on a holder wafer positioned over a silicon wafer as taught by the present invention;
FIG. 3 is a schematic cross-sectional view of an RTP reactor with a silicon wafer placed on quartz bolts; and FIG. 4 is a schematic cross-sectional view of RTP diffusion with a novel diffusion source according to the teachings of the present invention.
DETAILED DESCRIPTION OF THE INVENTION In rapid thermal diffusion (RTD) according to the teachings of the present invention, a dopant source is produced using either a rigid disc holder, which serves as a substrate for deposition of a dopant in a form of a spin-on dopant source, doped oxides, or by using a planar dopant source with high dopant vapor pressure. In the case of spin-on dopant deposition, one of a number of commercially available dopant sources (B, P, As) may be used to spin coat the holder wafer and to become a new planar dopant source. As in the case of furnace diffusion, where spin-on dopant is directly deposited on the silicon wafer, the dopant spun on a holder wafer has to be prebaked at a low temperature, according to the manufacturer' s specifications, in order to evaporate all solvents. In the case of doped oxides, any methods used in silicon technology for deposition of such oxides (CVD, LPCVD, PECVD) may be implemented for dopant source fabrication. Doped oxides may be also obtained by ion implantation into undoped, deposited oxides. As
SUBSTITUTE SHEET mentioned above, a third category of dopant sources is planar dopant sources having high vapor pressure of compounds. This latter characteristic allows efficient evaporation of dopant from the surface region of the source.
Referring now to the FIGs. wherein for clarity and convenience like or similar elements are designated by identical reference numbers throughout the several views and wherein the various elements are not necessarily drawn to scale, and more particularly to FIGs. 1 and 2, there is shown a dopant source according to the present invention in contrast to a prior art method of deposition. FIG. 1 depicts direct deposition of a spin- on dopant 2 onto a silicon wafer 4, a prior art technique. FIG. 2, on the other hand, in conformance with the teachings of the present invention, shows a dopant source 6 comprising a spin-on dopant deposited on a holder wafer, which holder wafer is physically distinct from a silicon wafer 4 to be ultimately doped. In the practice of the method of the present invention, after the dopant source is obtained, the dopant source and a silicon wafer are positioned in close proximity to each other for further processing. This positioning may be effected by any number of support means, such as quartz bolts, which are conventionally used to support processed wafers on a quartz tray during RTP. When such bolts are used, the degree of mutual proximity is determined by the height of flanges grooved on the bolts. Both wafers are simultaneously heated by lamps and dopant is liberated from the active surface of dopant source and transported to the silicon surface where solid state diffusion into the silicon wafer takes place.
Referring now to FIGs. 3 and 4, details regarding an embodiment of an apparatus according to the teachings of the present invention may be seen. In both FIGs. 3 and 4 an RTP reactor consisting of a water cooled outer
SUBSTITUTE SHEET portion 8, a quartz tube 10 positioned within the portion 8, and lamps 12 heating water surrounding tube 10 within portion 8 is shown. A quartz tray 14 is positioned within quartz tube 10 by conventional means. Quartz bolts 16 on tray 14 provide means for supporting a silicon wafer 4 only (such as is shown in FIG. 3) or a diffusion source wafer with spin-on source 6 according to the teachings of the present invention together with a silicon wafer 4 (such as is shown in FIG. 4). Of course, other support mechanisms and environments in which RTP can be effected can be constructed by those skilled in the art and can be suitably employed to practice embodiments of the present invention.
The distance between the dopant source and silicon wafer is an important parameter which determines dopant transport during RTD. With reference to the specific embodiment shown in FIG. 4, due to high durability of quartz bolts at high temperature, this distance does not change in time, providing in this way good reproducibility of the diffusion processes. The working silicon wafer 4 may be located above or below the dopant source 6 depending on the design of a rapid thermal processors. Temperature of the processed silicon wafer is controlled by the lamp intensity activated by e. g. , a computer operated system (not shown) and it can be measured by pyrometer (not shown) pointing at its back side, as in typical RTP steps. Gas atmosphere such as N-, O, or N.,+0, in the RTP oven can also be maintained by a computer system. Typical temperatures are up to 1150ϋC and process times up to 300 seconds, and may be adjusted according to device requirements. Higher diffusion temperatures are not necessary for shallow junction formation and, moreover, slip lines in silicon wafers may be more easily generated during such processes. In order to obtain reproducible diffusion parameters the process has to include surface activation of dopant source. This may be readily obtained by etching back a
SUBSTITUTE SHEET thin layer of deposited dopant source, whether in the form of spin-on source or doped oxides, as well as by etching a thin layer of high vapor pressure planar dopant source. In all cases plasma-assisted etching, such as plasma etching, reactive ion etching or sputtering, may be used to remove a layer depleted of dopant and to expose a new, dopant-rich layer. This is an important step in such a rapid thermal diffusion process.
The proposed new RTD process uses a wafer-shaped rigid material, mechanically stable at high temperature, as a holder for deposited dopant or a planar dopant source which also must be thermomechanically durable. Thus, source warpage, which is induced by a temperature gradient along the wafer radius during warm-up, steady state and cool-down periods, can be prevented and constant distance between the dopant source and the silicon wafer can be maintained. Therefore, dopant diffusion from the dopant source to the surface of a processed silicon wafer is uniform as may be monitored by a small variation of sheet resistance (Rs) within the whole wafer. Silicon wafers, planar solid sources commercially available, or other rigid materials such as quartz or ceramics may be used as holder discs or, alternatively, a planar dopant source with high vapor pressure may be used as an off-the-shelf dopant. It should be noted, however, that differences exist between diffusion parameters obtained .for various dopants depending on the disc types. In general, solid source discs are less susceptible to temperature stress than silicon wafers, and thus they can be used as a spin-on holders in a large number of diffusion processes. Also quartz or ceramic materials can be used as holders for dopant sources. The number of processes where a single wafer can be reused as a dopant source is smaller for silicon wafers as compared to other holders such as solid source discs, ceramics or quartz. However, one silicon wafer may be used in several processes depending on the
SUBSTITUTESHEET temperature conditions of the process. Low temperatures increase the lifetime of such a source, while high temperatures accelerate the source warpage leading to its degradation. For this reason the use of types of holders other than silicon wafers is more economical if they are to be used to fabricate integrated circuits on a large scale. Among various planar solid dopant sources, only the sources designed for high temperature processes may be used as durable diffusion source wafers. In the case of low temperature planar solid sources, the wafer warpage induced by stress generated during RTP limits use of a single source to processes having a few steps only. With respect to thermomechanical stability, such sources are comparable to the silicon wafers used as diffusion- source wafers.
In the case of boron, diffusion of dopant into a silicon wafer is independent of the material used as a dopant holder for the spin-on source. The same sheet resistance and junction depth results can be obtained whether a silicon wafer or a planar solid dopant source is used as a holder for active dopant.
Diffusion of phosphorus into silicon is very reproducible provided that a silicon wafer or other non- porous rigid material is used as a holder disk supporting the active dopant layer in the dopant source. A spin-on dopant source may be also deposited on a planar solid source used as a holder wafer, but saturation of the solid source with liquid spin-on dopant is required for high dopant concentration processes in such a case. With respect to As diffusion, the silicon wafer can not be used as a holder for dopant since there is no effective evaporation of the As source. However, arsenic may be diffused at high dopant concentrations provided that the spin-on dopant is used on the planar solid arsenic source. The roughness of the solid source makes the effective surface of the dopant layer large as compared to planar area of a given disc diameter, which
SUBSTITUTESHEET increases the volume concentration of dopant. The possibilities of the influence of oxygen from the planar solid source on As diffusion cannot be excluded either. All of the foregoing conclusions are based on sheet resistance and junction depth measurements obtained in all dopant diffusions under various thermal conditions. The proposed new RTP diffusion, whether using silicon wafers, solid-source discs or other rigid dopant holders, allows defect-free introduction of dopants into silicon in a clean (with respect to spin-on sources deposited directly on the surface) and reproducible (with respect to solid sources) way for all dopants.
In contrast to planar solid dopant sources, where the bulk of the source is responsible for dopant diffusion (especially for P and As, less for B where a B_0- layer is formed the surface of the BN source) the active dopant source, in the proposed RTD, is limited to the surface region. Thus, the new diffusion sources may be used in various temperature and time conditions without any additional thermal steps, except for standard low temperature prebaking used to evaporate dopant solvents in the case of sources implementing spin-on dopants.
The new diffusion process may be used in production of VLSI silicon integrated circuits, where . shallow junctions (less than 0.1 micron) are required. In addition, this diffusion method may be especially advantageous for the fabrication of trench capacitors, since the dopant source is located in close proximity to silicon wafer but is not directly deposited on the object wafer. Thus, this RTD method may be used both in bipolar and MOS VLSI/ULSI technologies.
The results of sheet resistance and junction depth measurements show that Rs can be as low as a few ohms/sq. and x :an be less than 0.1 micron. In addition, silicon diodes have been fabricated to test these processes and good, no leaky I-V characteristics have been obtained.
SUBSTITUTE SHEET More importantly, the uniform doping of trench capacitors has been revealed (both along the walls and at the bottom of deep trenches).
Obviously, numerous modifications and variations are possible in view of the above teachings. Accordingly, within the scope of the appended claims, the present invention may be practiced otherwise than as specifically described above.
SUBSTITUTE SHEET

Claims

What is claimed is:
1. An apparatus for doping a silicon wafer comprising: means for holding a planar dopant source and * said silicon wafer in close proximity; and
5 means for rapidly thermally processing said planar dopant source and said silicon wafer, wherein said means for holding a planar dopant source is employed to hold such a source.
2. An apparatus as recited in claim 1, wherein 10 said planar dopant source comprises a holder disc with a dopant source deposited therein.
3. An apparatus as recited in claim 2, wherein said dopant source comprises a spin-on dopant.
4. A dopant source to be employed in rapid thermal 15 processing comprising: a thermomechanically stable substrate; and an active surface of a planar dopant source built upon said substrate.
5. A dopant source as recited m claim 4, wherein 20 said active surface is built by deposition of a spin-or. opant.
6. A dopant source as recited in claim 4, wherein s aid active surface comprises doped oxides .
7. A dopant source as recited in claim 4, wherein *25 s aid active surface comprises oxides implanted with dcoant.
SUBSTITUTE SHEET
8. A method of doping a silicon wafer comprising the steps of: producing a planar dopant source; disposing said planar dopant source in close proximity to said silicon wafer; and rapidly thermally processing said planar dopant source and said silicon wafer.
9. A method as recited in claim 8, wherein said step of producing a planar dopant source comprises the step of depositing a dopant source on a thermomechaniσally stable holding disc.
10. A method as recited in claim 9, wherein said dopant source comprises a spin-on dopant.
11. A method as recited in claim 9, wherein said dopant source comprises doped oxides.
12. A method as recited in claim 8, wherein said step of producing a planar dopant source comprises the step of activating the source surface of a planar source containing high vapor pressure dopants.
13. A method of diffusing a dopant material comprising the steps of: preparing a planar dopant source comprising a dopant rich layer deposited on thermomechanically stable rigid dopant holder; placing the dopant source in close proximity to a silicon wafer in such a manner that the active dopant layer faces the silicon wafer; and rapidly heating the dopant source and the silicon wafer to a temperature above 800°C for a period of time not more than 300 seconds.
SUBSTITUTE SHEET
14. A method as recited in claim 13 wherein said dopant is selected from the group comprising boron, phosphorous or arsenic.
15. A method as recited in claim 14, wherein said planar dopant source is prepared using a spin-on dopant source, and wherein prebaking of the source at a low temperature is effected.
16. A method as recited in claim 14, wherein said planar dopant source comprises doped oxides.
17. A method as recited in claim 14 wherein said planar dopant source comprises a high vapor pressure planar source.
18. A method as recited in claim 13 wherein said step of preparing a planar dopant source comprises the step of activating a previously used dopant source.
19. A method as recited in claim 18, wherein said activation is effected via plasma assisted etching, which etching is used to remove dopant depleted material and to expose dopant rich material.
20. The method of claim 13, wherein planar junctions are doped.
21. The method of claim 13, wherein trench capacitors are doped.
22. The method of claim 20, wherein single wafer multiprocessing is involved.
23. The method of claim 21, wherein single wafer multiprocessing is involved.
SUBSTITUTE SHEET
EP19910920043 1990-10-02 1991-10-02 Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing Withdrawn EP0588792A4 (en)

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