EP0569004A2 - Device for changing the static electric potentials of an insulating material surface - Google Patents
Device for changing the static electric potentials of an insulating material surface Download PDFInfo
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- EP0569004A2 EP0569004A2 EP93107337A EP93107337A EP0569004A2 EP 0569004 A2 EP0569004 A2 EP 0569004A2 EP 93107337 A EP93107337 A EP 93107337A EP 93107337 A EP93107337 A EP 93107337A EP 0569004 A2 EP0569004 A2 EP 0569004A2
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- fullerenes
- active surface
- doping
- molecules
- insulating material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H05F1/00—Preventing the formation of electrostatic charges
- H05F1/02—Preventing the formation of electrostatic charges by surface treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T19/00—Devices providing for corona discharge
Definitions
- the invention relates to a device for changing the static electrical potential of a surface formed from insulating material with the aid of an electrode, the active surface of which faces the surface formed of insulating material and has a fine structure, the structural elements of which are starting points for a corona charge.
- a device of this type is known from EP 0295431 B1, in which the active elements are the tips of non-metallic, electrically conductive fibers which are arranged individually alongside one another in tufts, namely at about 100,000 fiber ends per square centimeter. In this way, a fine structure is achieved in the active surface, which favors the formation of a corona discharge which starts from the entire active surface. Such a corona discharge is favorable for a controlled change in potential.
- the object of the invention is to provide a device of the type mentioned at the outset with the highest possible fine structure in the active surface, taking into account the aforementioned functional conditions, which can be produced in a reproducible manner as possible.
- the invention solves this problem by the fact that the structural elements are fullerene molecules.
- the structural elements are at least partially designed as fullerene fragments, derivatives and / or heterofullerenes or heterofullerene fragments, derivatives.
- fullerene molecules take over the function of the fiber ends in the known device.
- Fullerene molecules can be arranged in the desired structure, in any case more simply as a tuft of fibers, and the conductivity can also be controlled very differently by conducting the fullerenes in the desired manner by doping, in particular with atoms, molecules from the group of halogens or alkali metals makes.
- the foreign atoms X are added to the fullerene by doping, incorporation, addition and / or admixture.
- a doped fullerene with the empirical formula K3C60 is particularly preferred.
- the fullerenes can be applied differently, for example with the help of lasers.
- Electrolytic application is advantageous because it is easy to handle and makes the application of the cage molecules easily controllable, for example by means of electric fields.
- the fullerenes that form the active surface are can grow on the crystal surfaces of a semiconductor, preferably gallium arsenide, gallium aluminum arsenide, aluminum gallium arsenide, indium phosphide or indium gallium arsenide.
- the semiconductor can then simultaneously serve as a power supply to the fullerenes.
- the fullerenes forming the active surface are preferably applied in the form of a monomolecular layer with a crystal structure. Then there is a uniform pattern of the electrically active elements over the entire active surface.
- the fullerenes of a monomolecular layer can be arranged in a single plane, they can be molecules of the same size, it can be molecules with the same doping, and / or these molecules can be arranged spherically identically in terms of their doping.
- the monomolecular layer can also be designed differently with regard to the criteria listed, but while maintaining a grid that requires an even distribution of the active elements.
- a corresponding embodiment is characterized in that the fullerenes forming the active surface are subdivided into several groups, that the fullerenes of the individual groups are mixed, arranged in a grid, that the fullerenes of a group are equally large, equally doped and with respect to their doping are arranged spherically identically and that the fullerenes of different groups differ in size, doping, spherical arrangement and / or their arrangement in different planes.
- 1 denotes a metallically conductive support body which is coated with a semiconductive, crystalline gallium arsenide layer 2.
- a monomolecular layer 3 of fullerene molecules 4, 5 has been grown or electrolytically applied to the layer 2, the molecular arrangement of which is based on a crystal structure, in the present case a regular column and row pattern, due to the crystal structure of the gallium arsenide layer 2.
- the individual fullerene molecules are made conductive by doping and each form the starting point of a corona discharge, which is caused by a potential difference between the layer 3 and the opposite surface 6 of an element 7 formed from insulating material, the static electrical potential of which is changed by the corona discharge should.
- the fullerene molecules forming the active surface consist of two or three groups, of which those of the first group according to FIGS. 2, 3 and 4 are designated A, those of the second group B and C of the third group.
- the molecules are arranged in a grid, as indicated by the arrangement of the letters in FIGS. 2 to 4.
- the molecules of the individual groups can differ, as will now be explained with reference to FIG. 5.
- Line II shows three fullerene molecules that are the same but are doped differently; one molecule with one doping element, the next with two doping elements and the last with three doping elements.
- Line III shows fullerene molecules that differ in their size.
- Line IV shows fullerene molecules which differ in the type of doping used, which is expressed in the drawing by the doping being represented once by a circle, once by a triangle and once by a square.
- Row V shows identical fullerene molecules, but they are arranged in different planes 10, 11, 12, the two outer planes 10 and 12 being spaced apart by the order of the diameter of a fullerene molecule.
- the fullerene molecules are doped with the conductivity types p, n and p.
- the first group identified by the letter A, is assigned to those molecules in rows I to V which are in column A and so on for column B and column C.
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Abstract
Description
Die Erfindung betrifft eine Vorrichtung zum Verändern des statischen elektrischen Potentials einer aus Isoliermaterial gebildeten Oberfläche mit Hilfe einer Elektrode, deren aktive Oberfläche der aus Isoliermaterial gebildeten Oberfläche zugekehrt ist und eine Feinstruktur aufweist, deren Strukturelemente Ausgangspunkte einer Koronaladung sind.The invention relates to a device for changing the static electrical potential of a surface formed from insulating material with the aid of an electrode, the active surface of which faces the surface formed of insulating material and has a fine structure, the structural elements of which are starting points for a corona charge.
Aus der EP 0295431 B1 ist eine Vorrichtung dieser Art bekannt, bei der die aktiven Elemente die Spitzen nichtmetallischer, elektrisch leitfähiger Fasern sind, die büschelartig einzeln längs nebeneinander angeordnet sind, und zwar zu etwa 100.000 Faserenden pro Quadratzentimeter. Auf diese Weise erzielt man in der aktiven Oberfläche eine Feinstruktur, die das Entstehen einer Koronaentladung, die von der gesamten aktiven Oberfläche ausgeht, begünstigt. Eine solche Koronaentladung ist für eine gesteuerte Potentialveränderung günstig.A device of this type is known from EP 0295431 B1, in which the active elements are the tips of non-metallic, electrically conductive fibers which are arranged individually alongside one another in tufts, namely at about 100,000 fiber ends per square centimeter. In this way, a fine structure is achieved in the active surface, which favors the formation of a corona discharge which starts from the entire active surface. Such a corona discharge is favorable for a controlled change in potential.
Um die angestrebte Wirkung zu erzielen, ist es wichtig, daß einzelne aktive Elemente hinsichtlich des Potentials gleich günstig liegen, damit sich die Koronaentladung gleichmäßig verteilt und nicht auf günstig gelegene lokale Bezirke konzentriert.In order to achieve the desired effect, it is important that individual active elements have the same favorable potential so that the corona discharge is distributed evenly and is not concentrated in favorably located local areas.
Aufgabe der Erfindung ist es, eine Vorrichtung der eingangs genannten Art mit einer möglichst hohen Feinstruktur in der aktiven Oberfläche unter Berücksichtigung der zuvor genannten Funktionsbedingungen zu schaffen, die möglichst einfach reproduzierbar herstellbar ist.The object of the invention is to provide a device of the type mentioned at the outset with the highest possible fine structure in the active surface, taking into account the aforementioned functional conditions, which can be produced in a reproducible manner as possible.
Die Erfindung löst diese Aufgabe dadruch, daß die Strukturelemente Fullerenmoleküle sind.The invention solves this problem by the fact that the structural elements are fullerene molecules.
Unter Fullerenen werden sogenannte Käfigmoleküle aus sphärisch angeordneten C-Atomen verstanden, vorzugsweise mit der chemischen Summenformel C2n,wobei sich n = 30, also die Summenformel C₆₀ besonders bewährt hat.Fullerenes are understood to mean so-called cage molecules made of spherically arranged C atoms, preferably with the chemical formula C 2n , where n = 30, ie the formula C₆₀ has proven particularly useful.
Erfindungsgemäß sind die Strukturelemente zumindest teilweise als Fullerenfragmente, -derivate und/oder Heterofullerene oder Heterofullerenfragmente, -derivate ausgebildet.According to the invention, the structural elements are at least partially designed as fullerene fragments, derivatives and / or heterofullerenes or heterofullerene fragments, derivatives.
Nach der Erfindung übernehmen einzelne Fullerenmoleküle die Funktion der Faserenden bei der bekannten Vorrichtung. Fullerenmoleküle kann man, einfacher jedenfalls als Faserbüschel, in der gewünschten Struktur anordnen und man kann auch die Leitfähigkeit sehr differenziert steuern, in dem man die Fullerene durch Dotierung, insbesondere mit Atomen, Molekülen aus der Gruppe der Halogene oder Alkalimetalle, in der gewünschten Weise leitfähig macht.According to the invention, individual fullerene molecules take over the function of the fiber ends in the known device. Fullerene molecules can be arranged in the desired structure, in any case more simply as a tuft of fibers, and the conductivity can also be controlled very differently by conducting the fullerenes in the desired manner by doping, in particular with atoms, molecules from the group of halogens or alkali metals makes.
Für ein dotiertes Fullerenmolekül ergibt sich die Summenformel XrC2n
mit X = H, Li, Na, K, Rb, Cs und/oder Fr
mit r = 0, 1, 2, ..., vorzugsweise 1
mit n = 16, 17, 18, ..., vorzugsweise 30.
Die Fremdatome X sind dem Fulleren durch Dotierung, Einlagerung, Anlagerung und/oder Beimischung zugefügt. Ein dotiertes Fulleren mit der Summenformel K₃C₆₀ ist besonders bevorzugt.The sum formula X r C 2n results for a doped fullerene molecule
with X = H, Li, Na, K, Rb, Cs and / or Fr
with r = 0, 1, 2, ..., preferably 1
with n = 16, 17, 18, ..., preferably 30.
The foreign atoms X are added to the fullerene by doping, incorporation, addition and / or admixture. A doped fullerene with the empirical formula K₃C₆₀ is particularly preferred.
Man kann die Fullerene unterschiedlich auftragen, zum Beispiel mit Hilfe von Laser. Vorteilhaft ist elektrolytischer Auftrag, weil er einfach zu handhaben ist und den Auftrag der Käfigmoleküle leicht steuerbar macht, beispielsweise durch elektrische Felder.The fullerenes can be applied differently, for example with the help of lasers. Electrolytic application is advantageous because it is easy to handle and makes the application of the cage molecules easily controllable, for example by means of electric fields.
Vorteilhaft und leicht sehr präzise steuerbar ist es auch, wenn man die Fullerene, die die aktive Oberfläche bilden, auf den Kristallflächen eines Halbleiters, vorzugsweise Galliumarsenid, Gallium-Aluminiumarsenid, Aluminium-Galliumarsenid, Indiumphosphid oder Indiumgalliumarsenid, aufwachsen läßt. Der Halbleiter kann dann gleichzeitig als Stromzuleitung zu den Fullerenen dienen.It is also advantageous and easy to control very precisely if the fullerenes that form the active surface are can grow on the crystal surfaces of a semiconductor, preferably gallium arsenide, gallium aluminum arsenide, aluminum gallium arsenide, indium phosphide or indium gallium arsenide. The semiconductor can then simultaneously serve as a power supply to the fullerenes.
Die die aktive Oberfläche bildenden Fullerene sind vorzugsweise in Form einer monomolekularen Schicht mit Kristallstruktur aufgetragen. Dann ergibt sich über die ganze aktive Oberfläche ein gleichförmiges Muster der elektrisch aktiven Elemente.The fullerenes forming the active surface are preferably applied in the form of a monomolecular layer with a crystal structure. Then there is a uniform pattern of the electrically active elements over the entire active surface.
Die Fullerene einer monomolekularen Schicht können in einer einzigen Ebene angeordnet sein, es kann sich um gleichgroße Moleküle handeln, es kann sich um gleichdotierte Moleküle handeln und/oder diese Moleküle können hinsichtlich ihrer Dotierung sphärisch identisch in der Schicht angeordnet sein.The fullerenes of a monomolecular layer can be arranged in a single plane, they can be molecules of the same size, it can be molecules with the same doping, and / or these molecules can be arranged spherically identically in terms of their doping.
Man kann die monomolekulare Schicht aber auch hinsichtlich der aufgeführten Kriterien unterschiedlich gestalten, allerdings unter Wahrung eines Rasters, das eine gleichmäßige Verteilung der aktiven Elemente bedingt. Eine dementsprechende Ausgestaltung ist dadurch gekennzeichnet, daß die die aktive Oberfläche bildenden Fullerene in mehrere Gruppen unterteilt sind, daß die Fullerene der einzelnen Gruppen gemischt, ein Raster bildend angeordnet sind, daß die Fullerene einer Gruppe unter sich gleichgroß, gleichdotiert und mit Bezug auf ihre Dotierung sphärisch gleich orientiert angeordnet sind und daß die Fullerene unterschiedlicher Gruppen sich hinsichtlich Größe, Dotierung, sphärischer Anordnung und/oder ihrer Anordnung in verschiedenen Ebenen voneinander unterscheiden.However, the monomolecular layer can also be designed differently with regard to the criteria listed, but while maintaining a grid that requires an even distribution of the active elements. A corresponding embodiment is characterized in that the fullerenes forming the active surface are subdivided into several groups, that the fullerenes of the individual groups are mixed, arranged in a grid, that the fullerenes of a group are equally large, equally doped and with respect to their doping are arranged spherically identically and that the fullerenes of different groups differ in size, doping, spherical arrangement and / or their arrangement in different planes.
Die Erfindung wird nun anhand der beigefügten Zeichnung näher erläutert.The invention will now be explained in more detail with reference to the accompanying drawing.
In der Zeichnung zeigt:
Figur 1- eine Vorrichtung nach der Erfindung abgebrochen perspektivisch,
Figur - ein Rasterbild und
Figur 5- eine Tabelle.
- Figure 1
- a device according to the invention broken perspective,
- Figure 2, 3 and 4
- a raster image and
- Figure 5
- a table.
In Figur 1 ist mit 1 ein metallisch leitender Tragkörper bezeichnet, der mit einer halbleitfähigen, kristallinen Galliumarsenid-Schicht 2 beschichtet ist. Auf die Schicht 2 ist eine monomolekulare Schicht 3 aus Fullerenmolekülen 4, 5 aufgewachsen oder elektrolytisch aufgetragen, deren Molekülanordnung eine Kristallstruktur, im vorliegenden Fall ein regelmäßiges Spalten- und Zeilenmuster, zugrundeliegt, bedingt durch die Kristallstruktur der Galliumarsenid-Schicht 2.In FIG. 1, 1 denotes a metallically conductive support body which is coated with a semiconductive, crystalline
Die einzelnen Fullerenmoleküle sind durch Dotierung leitfähig gemacht und bilden, jedes für sich, Ausgangspunkt einer Koronaentladung, die hervorgerufen wird durch eine Potentialdifferenz zwischen der Schicht 3 und der gegenüberliegenden Oberfläche 6 eines aus Isoliermaterial gebildeten Elementes 7, deren statisches elektrisches Potential durch die Koronaentladung verändert werden soll.The individual fullerene molecules are made conductive by doping and each form the starting point of a corona discharge, which is caused by a potential difference between the
Gemäß einiger Abänderungen bestehen die die aktive Oberfläche bildenden Fullerenmoleküle aus zwei oder drei Gruppen, von denen diejenigen der ersten Gruppe gemäß Figur 2, 3 und 4 mit A, diejenigen der zweiten Gruppe mit B und diejenigen der dritten Gruppe mit C bezeichnet sind. Die Moleküle sind im Raster angeordnet wie das in Figur 2 bis 4 durch die Anordnung der Buchstaben angedeutet ist. Die Moleküle der einzelnen Gruppen können sich unterscheiden, wie dies nun anhand der Figur 5 erläutert wird.According to some modifications, the fullerene molecules forming the active surface consist of two or three groups, of which those of the first group according to FIGS. 2, 3 and 4 are designated A, those of the second group B and C of the third group. The molecules are arranged in a grid, as indicated by the arrangement of the letters in FIGS. 2 to 4. The molecules of the individual groups can differ, as will now be explained with reference to FIG. 5.
In Zeile I aus Figur 5 sind drei unter sich gleiche und gleichdotierte Fullerenmoleküle angezeigt, die sich jedoch hinsichtlich ihrer durch einen schwarzen Punkt gekennzeichneten Dotierung in ihrer sphärischen Anordnung unterscheiden.In line I of Figure 5, three are the same and fullerene molecules with the same doping are displayed, but differ in their spherical arrangement with regard to their doping, which is indicated by a black dot.
In Zeile II sind drei unter sich gleiche Fullerenmoleküle dargestellt, die jedoch unterschiedlich dotiert sind; das eine Molekül mit einem Dotierungselement, das nächste mit zwei Dotierungselementen und das letzte mit drei Dotierungselementen.Line II shows three fullerene molecules that are the same but are doped differently; one molecule with one doping element, the next with two doping elements and the last with three doping elements.
In Zeile III sind Fullerenmoleküle dargestellt, die sich durch ihre Größe unterscheiden.Line III shows fullerene molecules that differ in their size.
In Zeile IV sind Fullerenmoleküle dargestellt, die sich durch die Art der eingesetzten Dotierung unterscheiden, was zeichnerisch zum Ausdruck gebracht ist, indem die Dotierung einmal durch einen Kreis, einmal durch ein Dreieck und einmal durch ein Viereck dargestellt ist.Line IV shows fullerene molecules which differ in the type of doping used, which is expressed in the drawing by the doping being represented once by a circle, once by a triangle and once by a square.
In Zeile V sind identische Fullerenmoleküle dargestellt, die jedoch in unterschiedlichen Ebenen 10, 11, 12 angeordnet sind, wobei die beiden außen gelegenen Ebenen 10 und 12 einen Abstand in der Größenordnung des Durchmessers eines Fullerenmoleküls aufweisen.Row V shows identical fullerene molecules, but they are arranged in
In Zeile VI sind die Fullerenmoleküle mit dem Leitfähigkeitstyp p, n und p dotiert.In row VI the fullerene molecules are doped with the conductivity types p, n and p.
Der ersten Gruppe, gekennzeichnet durch den Buchstaben A, sind diejenigen Moleküle der Zeilen I bis V zugeordnet, die in Spalte A stehen und so fort für Spalte B und Spalte C. Die Zeilen I bis VI definieren in Verbindung mit Figur 2 jeweils ein Ausführungsbeispiel für sich. Entsprechendes gilt für die Figuren 3 und 4. Bei diesen sich daraus ergebenden 3 x 6 = 18 Ausführungsbeispielen unterscheiden sich die Fullerene immer nur durch ein einziges Kriterium. Es sind weitere Ausführungsbeispiele möglich, bei denen sich die Moleküle der einzelnen Gruppen A, B und C durch zwei, drei oder mehr derjenigen durch die Zeilen I bis V definierten Kriterien unterscheiden.The first group, identified by the letter A, is assigned to those molecules in rows I to V which are in column A and so on for column B and column C. Rows I to VI each define an exemplary embodiment in connection with FIG yourself. The same applies to FIGS. 3 and 4. With these resulting 3 x 6 = 18 exemplary embodiments, the fullerenes always differ only by a single criterion. Further exemplary embodiments are possible in which the molecules of the individual groups A, B and C differ by two, three or more of the criteria defined by lines I to V.
Weitere Abänderungen sind möglich, indem man mehr als drei Gruppen einsetzt. Man kann auch in Abänderung des Rasters nach Figur 2 den einzelnen Gruppen eine unterschiedliche Anzahl von Mitgliedern zuordnen. Wesentlich ist nur, daß sich in der aktiven Oberfläche ein durchgehend gleichförmiges Raster ergibt, so daß die aktiven Elemente gleichmäßig über die aktive Oberfläche verteilt sind. Es können dann sämtliche eingesetzte Fullerenmoleküle einer monomolekularen Schicht aktive Elemente bilden, es können aber auch, je nach der Anordnung, nur ausgewählte Moleküle einer monomolekularen Schicht aktive Elemente bilden, zum Beispiel nur die Moleküle A bei den Ausführungsbeispielen gemäß Zeile V aus Figur 3.Further changes are possible by using more than three groups. It is also possible to assign a different number of members to the individual groups by changing the grid according to FIG. It is only essential that there is a continuously uniform grid in the active surface, so that the active elements are evenly distributed over the active surface. All of the fullerene molecules used in a monomolecular layer can then form active elements, but depending on the arrangement, only selected molecules in a monomolecular layer can also form active elements, for example only molecules A in the exemplary embodiments according to line V from FIG. 3.
Claims (10)
daß die Strukturelemente (4, 5) Fullerenmoleküle sind.Device for changing the static electrical potential of a surface formed from insulating material with the aid of an electrode, the active surface of which faces the surface formed of insulating material and has a fine structure, the structural elements of which are starting points for a corona charge, characterized in that
that the structural elements (4, 5) are fullerene molecules.
daß die Strukturelemente zumindest teilweise als Fullerenfragmente, -derivate und/oder als Heterofullerene oder Heterofullerenfragmente, -derivate ausgebildet sind.Device according to claim 1, characterized in
that the structural elements are at least partially designed as fullerene fragments, derivatives and / or as heterofullerenes or heterofullerene fragments, derivatives.
daß durch Dotierung oder Einlagerung, insbesondere mit Atomen, Molekülen aus der Gruppe der Halogene oder der Alkalimetalle, leitfähig gemachte Fullerene eingesetzt sind.Device according to claim 1 or 2, characterized in that
that fullerenes which have been rendered conductive are used by doping or incorporation, in particular with atoms, molecules from the group of the halogens or the alkali metals.
daß die Fullerene elektrolytisch aufgetragen sind.Device according to one of the preceding claims, characterized in that
that the fullerenes are applied electrolytically.
daß die Fullerene auf die Kristallflächen eines Halbleiters, vorzugsweise Galliumarsenid, Gallium-Aluminiumarsenid, Aluminium-Galliumarsenid, Indiumphosphid oder Indiumgalliumarsenid, aufgewachsen sind.Device according to claim 1 or 2, characterized in that
that the fullerenes have grown on the crystal surfaces of a semiconductor, preferably gallium arsenide, gallium aluminum arsenide, aluminum gallium arsenide, indium phosphide or indium gallium arsenide.
daß die die aktive Oberfläche bildenden Fullerene in Form einer monomolekularen Schicht (3), insbesondere unter Zugrundelegung einer Kristallstruktur, aufgetragen sind.Device according to one of the preceding claims, characterized in that
that the fullerenes forming the active surface are applied in the form of a monomolecular layer (3), in particular on the basis of a crystal structure.
daß für die aktive Oberfläche gleichgroße Fullerene eingesetzt sind.Device according to one of the preceding claims, characterized in that
that fullerenes of the same size are used for the active surface.
daß für die aktive Oberfläche gleichdotierte Fullerene eingesetzt sind.Device according to one of the preceding claims, characterized in that
that equally doped fullerenes are used for the active surface.
daß die die aktive Oberfläche bildenden Fullerene hinsichtlich ihrer Dotierung mit gleicher sphärischer Orientierung angeordnet sind.Device according to one of the preceding claims, characterized in that
that the fullerenes forming the active surface are arranged with the same spherical orientation with regard to their doping.
daß die die aktive Oberfläche bildenden Fullerene in mehrere Gruppen unterteilt sind,
daß die Fullerene der einzelnen Gruppen gemischt, ein Raster bildend angeordnet sind,
daß die Fullerene einer Gruppe unter sich gleichgroß, gleichdotiert und mit Bezug auf ihre Dotierung sphärisch gleich orientiert angeordnet sind und
daß die Fullerene unterschiedlicher Gruppen sich hinsichtlich Größe, Dotierung, sphärischer Anordnung und/oder ihrer Anordnung in verschiedenen Ebenen voneinander unterscheiden. (Fig. 2 - 5)Device according to one of claims 1 to 8, characterized in that
that the fullerenes forming the active surface are divided into several groups,
that the fullerenes of the individual groups are mixed, arranged to form a grid,
that the fullerenes of a group are of equal size, are equally doped and are arranged with the same spherical orientation with respect to their doping and
that the fullerenes of different groups differ in size, doping, spherical arrangement and / or their arrangement in different planes. (Fig. 2-5)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4214975 | 1992-05-06 | ||
| DE4214975A DE4214975A1 (en) | 1992-05-06 | 1992-05-06 | Device for changing the static electrical potential of a surface formed from insulating material |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0569004A2 true EP0569004A2 (en) | 1993-11-10 |
| EP0569004A3 EP0569004A3 (en) | 1993-12-15 |
| EP0569004B1 EP0569004B1 (en) | 1996-03-20 |
Family
ID=6458302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP93107337A Expired - Lifetime EP0569004B1 (en) | 1992-05-06 | 1993-05-06 | Device for changing the static electric potentials of an insulating material surface |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0569004B1 (en) |
| AT (1) | ATE135874T1 (en) |
| DE (2) | DE4214975A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1041982C (en) * | 1993-12-28 | 1999-02-03 | Abb研究有限公司 | High-voltage installation |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0295431A1 (en) * | 1987-06-19 | 1988-12-21 | Till Keesmann | Device for modifying the static electric potential by corona discharge of a surface made of an insulating material of a moved element |
-
1992
- 1992-05-06 DE DE4214975A patent/DE4214975A1/en not_active Withdrawn
-
1993
- 1993-05-06 EP EP93107337A patent/EP0569004B1/en not_active Expired - Lifetime
- 1993-05-06 AT AT93107337T patent/ATE135874T1/en not_active IP Right Cessation
- 1993-05-06 DE DE59301929T patent/DE59301929D1/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0295431A1 (en) * | 1987-06-19 | 1988-12-21 | Till Keesmann | Device for modifying the static electric potential by corona discharge of a surface made of an insulating material of a moved element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1041982C (en) * | 1993-12-28 | 1999-02-03 | Abb研究有限公司 | High-voltage installation |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0569004A3 (en) | 1993-12-15 |
| ATE135874T1 (en) | 1996-04-15 |
| DE4214975A1 (en) | 1993-11-11 |
| DE59301929D1 (en) | 1996-04-25 |
| EP0569004B1 (en) | 1996-03-20 |
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