EP0554145A1 - Bildverstärkerröhre, insbesondere für Nahfokusröhre - Google Patents

Bildverstärkerröhre, insbesondere für Nahfokusröhre Download PDF

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Publication number
EP0554145A1
EP0554145A1 EP93400150A EP93400150A EP0554145A1 EP 0554145 A1 EP0554145 A1 EP 0554145A1 EP 93400150 A EP93400150 A EP 93400150A EP 93400150 A EP93400150 A EP 93400150A EP 0554145 A1 EP0554145 A1 EP 0554145A1
Authority
EP
European Patent Office
Prior art keywords
wafer
primary screen
microchannels
intensifier tube
tube according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP93400150A
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English (en)
French (fr)
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EP0554145B1 (de
Inventor
Paul De Groot
Yves Beauvais
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales Electron Devices SA
Original Assignee
Thomson Tubes Electroniques
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Filing date
Publication date
Application filed by Thomson Tubes Electroniques filed Critical Thomson Tubes Electroniques
Publication of EP0554145A1 publication Critical patent/EP0554145A1/de
Application granted granted Critical
Publication of EP0554145B1 publication Critical patent/EP0554145B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/82—Mounting, supporting, spacing, or insulating electron-optical or ion-optical arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
    • H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect

Definitions

  • the invention relates to image intensifier tubes of the type in which, on the one hand, converting into visible or near visible photons an incident ionizing radiation, and in which, on the other hand, a wafer of microchannels is used to ensure a gain in electrons.
  • Such image intensifier tubes are often called “proximity focusing”, they are used for example in the field of radiology.
  • the principle of radiological image intensifier tubes or abbreviated as “IIR tubes” using microchannel wafers is well known. It is described in particular by J. Adams in “Advances in Electronics and Electron. Physics", volume 22A, pages 139-153, Academic Press, 1966.
  • Figure 1 shows schematically the structure of a conventional IIR tube, using such a microchannel wafer.
  • the IIR tube 1 comprises a vacuum-tight enclosure, constituted by a tube body 2 arranged around a longitudinal axis 13 of the tube.
  • the body 2 is closed at one end by an inlet window 3, and at the other end by an outlet window 14
  • the entrance window 3 is generally made up of a thin metal sheet (aluminum, tantalum, etc.) .
  • the X-rays then meet a layer 4 of scintillator materials, in which they are absorbed and give rise to a local light emission proportional to the amount of X-ray absorbed.
  • the scintillator material may for example be cesium iodide forming the layer 4 with a thickness of the order of 0.1 to 0.8 mm.
  • the layer 4 of scintillator material is supported by a support plate 5 transparent to X-rays, formed for example of a thin sheet of metal (for example of aluminum alloy), or else of a glass plate based on silica , etc ...
  • the support plate 5 is located towards the entry window.
  • the scintillator 3 carries a photocathode 6.
  • the photocatode 6 consists of a very thin layer (often less than 1 micrometer) of a photoemissive material, a layer which is deposited on one side of the scintillator 4 opposite the support plate 5.
  • the photocathode 5 absorbs the light emitted by the scintillator 4 and emits in response locally electrons in the ambient vacuum, in proportion of this light.
  • the assembly formed by the support plate 5 carrying the scintillator 4 itself carrying the photocathode 6 constitutes a primary screen 15.
  • the electrons (not shown) emitted by photocathode 6 are directed by an electric field, towards the entry face 8 of a wafer 7 of microchannels.
  • a first and a second potential V1, V2 are applied respectively to the photocathode 6 and to the input face 8, with the second potential V2 more positive than the first potential V1.
  • the wafer 7 of microchannels is an assembly of a multitude of small parallel channels 12 assembled in the form of a rigid plate.
  • Each primary electron (emitted by the photocathode) which enters a channel is multiplied by a phenomenon of secondary emission in cascade on the walls of the channel, so that the electronic current leaving the wafer can be more than a thousand times higher informed at the entrance.
  • the diameter d1 of the channels can be between 10 and 100 micrometers.
  • the channels 12 are inclined relative to the normal to the plane of the wafer, so that electrons emitted by the photocathode 6 parallel to this normal cannot emerge from a channel without having given rise to a phenomenon of secondary emission.
  • the thickness E of the plate forming the wafer 7 of microchannels is typically between 1 and 5 mm.
  • the electronic gain of the wafer can be adjusted within a large range of values, for example between 1 and 5000, as a function of the voltage developed between the input face 8 and an output face 9 of this wafer 7, output face. 9 to which a third potential V3 is applied.
  • the electrons leaving the microchannel wafer are accelerated and focused by an electric field, on a luminescent screen (10) placed opposite the wafer, parallel to the latter, and at a distance D of the order of 1 to 5mm.
  • the luminescent screen 10 locally emits an amount of light proportional to the incident electron current.
  • the luminescent screen therefore reproduces a visible and intensified image of the X-ray image projected on the scintillator, through the window. tube inlet.
  • the luminescent screen which is a layer a few micrometers thick consisting of grains of luminophoric material, is deposited on a glass porthole which can constitute the exit window 14 of the tube.
  • the face of the luminescent screen 10 facing the wafer 7 of microchannels is coated with a very thin metallic layer 18, made of aluminum for example.
  • This metallization allows the electric polarization of the screen (by the application of a fourth potential V4 more positive than the third potential V3), and serves as a reflector for the light emitted towards the rear by this screen.
  • the porthole 14 supporting the screen 10 may be made of glass, or constituted, for example, by a fiber optic.
  • the screen 10 can be deposited directly on this window, or on an intermediate transparent support, if one wishes to isolate the screen 10 from the window, for constraints of use.
  • the primary screen 15 and the wafer 7 of microchannels are secured to the body 2 of the tube, for example using lugs 21,22,23 sealed in this body, and to which are applied the polarization potentials V1, V2 , V3.
  • the polarization of the inlet and outlet faces 8, 9 is also ensured by means of a metallization (not shown) with which these inlet and outlet faces of the wafer are generally coated, except of course opposite. channels 12.
  • the primary screen 15 and the wafer 7 are thus fixed so as to be electrically isolated from each other, while being separated by a relatively small distance D1, of the order of a few tenths of a millimeter (It should be noted that for the sake of clarity in Figure 1, the scale of dimensions is not respected).
  • the distance D1 between the photocathode 6 and the wafer 7 must be maintained uniformly to obtain good image resolution over the whole field.
  • the correct positioning of the primary screen 15 and in particular of the photocathode 6 relative to the wafer 7 is a long and delicate operation, which is made even more difficult because of the low mechanical rigidity that the support plate presents. 5 (carrying the scintillator 4) in order to absorb the incident X-ray at least.
  • IIR tubes with proximity focusing capable of capturing large images
  • the primary screen can commonly reach a diameter of up to about 50 centimeters.
  • the present invention relates to image intensifiers of the type in which, on the one hand, a scintillator is used to convert ionizing radiation into light or near-visible radiation, and where, on the other hand, a wafer of microchannels arranged nearby is used. of the primary screen and more particularly of the photocathode.
  • the invention aims to allow precise and reliable relative positioning between the primary screen and the microchannel plate, at a very small distance, which may be less than 0.2 millimeter.
  • the invention proposes to secure the primary screen and the microchannel wafer, by means of electrically insulating wedges.
  • the number and distribution of these shims are chosen in particular as a function of the facing surfaces, in order to achieve the best compromise between mechanical rigidity and a minimum absorption of the electrons emitted by the photocathode.
  • the invention therefore relates to an image intensifier tube comprising a primary screen, a microchannel plate fixed in the intensifier tube, the primary screen comprising a scintillator carried by a support plate, a photocathode carried by the scintillator, the photocathode being in view of an entry face of the wafer, characterized in that the primary screen is secured to the wafer by means of insulating shims.
  • FIG. 2 represents an IIR tube according to the invention.
  • the tube 20 has a general structure similar to that of the IIR tube shown in FIG. 1.
  • the tube 20 differs from that shown in FIG. 1 essentially by the way in which the fixing of its primary screen is carried out.
  • the tube 20 comprises a vacuum-tight enclosure, constituted by a tube body 2 closed at one end by an inlet window 3, and at the other end by an outlet window 14.
  • This enclosure contains a primary screen 19, and a wafer 7 of microchannels placed between the primary screen 19 and the outlet window 3.
  • the primary screen 19 is formed by a thin sheet or plate 5 serving to support a scintillator 4; the scintillator is constituted for example by a layer of cesium iodide.
  • the support plate 5 is oriented towards the entry window 3 and the scintillator 4 is oriented towards the wafer 7 of microchannels.
  • the scintillator 4 carries, on a face oriented towards the wafer 7, a thin layer of photoemissive material forming a photocathode 6.
  • the wafer 7 of microchannels is fixed in the body 2 of the tube by means of fixing lugs 22, 23 which on the one hand are sealed in the body 2 which they pass through, and which on the other hand are welded to the two opposite large faces 8, 9 which respectively constitute the entry face and the exit face of the wafer 7.
  • the fixing lugs 22, 23 can thus also serve to apply the potentials V2, V3 useful for the operation of the wafer 7 as already explained previously.
  • the primary screen 19 is supported on the input face 8 of the wafer 7 of microchannels by means of one or more electrically insulating wedges 25; the height of the shims 25 defines the spacing between the photocathode 6 and the input face 8 of the wafer 7, that is to say the distance D1 between them.
  • the shims 25 are glass balls, for example having a diameter d2 of 100 micrometers which forms the height of the shims. Such balls are commonly available commercially with a very small diameter dispersion around the nominal value.
  • the wafer 7 of microchannels being fixed to the body 2 of the tube, it constitutes the support of the primary screen 19, which is kept pressed thereon under the thrust of one or more thrust members 26.
  • the primary screen 19 is thus mechanically secured to the wafer 7 of microchannels, and not to the body 2 of the tube as is the case in the prior art.
  • the thrust members 26 can be formed in different ways, depending in particular on the manufacturing methods specific to each IIR tube. In the nonlimiting example of the description, these pressure members bear on an inner peripheral part 27 of the entry window 3, this peripheral part being more massive than the central part which must absorb the X-ray as little as possible. incident.
  • these thrust members 26 comprise: a rigid spacer 28 and a spring washer 29.
  • the spring washer 29 is placed on the support plate 5 (in a peripheral zone of the latter) and the spacer 28 is disposed between the entry window 3 and the spring washer 29.
  • the spacers 28 have a height H suitable for keeping the screen applied primary 19 against the shims 25 using spring washers 29.
  • Several such thrust members can be used, distributed around the primary screen 15.
  • the first potential V1 is brought into the tube 20 by a bushing 31, to be applied to the photocathode 6, without however establishing a rigid connection between the body 2 and the primary screen 19.
  • the electrical connection between the bushing 31 and the photocathode can be achieved in different ways using means in themselves simple.
  • this is obtained on the one hand, by connecting the bushing 31 to the spring washer 29, by a flexible conductive wire 32, the spring washer 29 itself being in contact with the support plate 5 carrying the scintillator (the support plate 5 is then preferably made of an electrically conductive material); on the other hand, the spring washer 29 is electrically connected to the photocathode 6 via a conductive layer 33, and a metallization layer 34 produced between the scintillator 4 and the photocathode 6 in a peripheral zone of the primary screen 19 (this metallization 34 obviously does not cover the useful central surface of the primary screen).
  • the metallization 34 is carried out, for example, by evaporation under vacuum of a thin layer (for example 0.1 to 1 micrometer) of chromium or aluminum, or of another metal, deposited on the periphery of the scintillator 4 .
  • This metallization 34 is then partially covered by the photocathode, so that the electrical connection with the latter is ensured, while keeping clear the most peripheral part of the metallization 34.
  • This most peripheral part of the metallization 34 is then covered of the conductive layer 33 which is also in contact with the support plate 5 and the spring washer (s) 29, as well as with the edge of the scintillator 4.
  • the conductive layer 33 can cover the entire turn of the screen primary 19 that is to say the edge of this primary screen, edge on which it can be deposited in a simple manner: for example it can result from the application, using a brush, of a paste containing metallic grains: commonly found on the market are suspensions of silver grains allowing such use.
  • the wedges 25 are constituted by balls
  • these balls can be secured to the inlet face 8 of the wafer 7 of microchannels by gluing.
  • the adhesive used can be photocurable, or thermosetting, and compatible in its hardened state, for use under vacuum.
  • the adhesive used for this purpose may for example be of the type known under the name "Araldite", the polymerization of which is accelerated by heating.
  • the balls or shims 25 are distributed and fixed on the input face 8 at a pitch p of the order, for example, of 2 centimeters.
  • p of the order
  • the entry face 8 of the wafer is covered with a layer of glass beads, then the glue is hardened by exposure or by heating.
  • the glass beads are then eliminated, with the exception of those which were in contact with a point of glue, and which consequently are joined to the wafer 7 by these glue points.
  • the application of the glue dots can be accomplished manually, or with the aid of automatic installation machines which are in themselves conventional.
  • the primary screen 19 is then placed on the wafer 7 and fixed to the latter as explained above, relying, at regular intervals, on the small glass balls or wedges 25.
  • the primary screen 19 itself maybe done in a traditional way.
  • the diameter of the balls 25 can be chosen as a function of the desired image resolution, small enough so that the balls are not visible on the image.
  • the pitch p of the balls is adapted as a function of the deformability of the primary screen 19, that is to say the lower the greater the deformability.
  • the balls 25 have a nominal diameter d2 larger than the diameter d1 of the microchannels.
  • Figure 3 is a sectional view similar to Figure 2 showing the primary screen 19 before its attachment to the wafer 7 of microchannels.
  • the primary screen 19 has a slightly concave shape so that when it is placed above the wafer 7 before it is fixed to the latter, it is first of all through its central zone 30 that it is in contact with the wedges 25. Then ensuring regular pressure on the periphery 36 of the primary screen 19 during its fixing using the pushing members 26 (shown in Figure 2), we obtain a uniform support of the primary screen on the shims 25, playing on the elasticity of the primary screen and particularly of the support plate 5.
  • Such a particularly concave shape of the primary screen 15 can result from an internal mechanical tension of the primary screen 19, mechanical tension which can itself result from the concave shape initially given to the support plate or support 5 before deposition. of the scintillator 4 on this support.
  • the coefficient of expansion of cesium iodide is generally higher than that of the support, and this scintillator is deposited hot on this support.
  • the tension exerted by the scintillator 4 tends to reduce the initial concavity, and it is necessary to give the support 5 a slightly greater concavity than that which is ultimately necessary.
  • the uniformity of the spacing between the latter and the photocathode 6 depends more on the diameters of the balls which constitute the shims 25, than on the mechanical rigidity of the support or support plate 5 Consequently, the thickness of the support plate 5 can be reduced in order to less absorb the incident radiation.
  • FIG. 4 schematically illustrates another way of producing the insulating shims 25 which separate the photocathode 6 from the wafer 7 of microchannels.
  • Figure 4 partially shows the wafer 7 of microchannels by a sectional view similar to that of Figure 3, but enlarged relative to the latter.
  • insulating shims (marked 25a) are formed by one or more deposits of electrically insulating material, deposits made by one or more layers 40 deposited on the inlet face 8 of the wafer 7, between the inlets of some or all of the channels 12. These deposits or shims 25a must preferably (but not necessarily), obstruct as little as possible the channels 12.
  • the deposits 25a can be obtained for example by a method of the vacuum evaporation type of an insulating material such as silica SiO2, alumina Al2O3, or any other compatible with the techniques of vacuum and photocathodes.
  • This insulating material can be evaporated at a very oblique incidence relative to the surface of the wafer, so as not to cover the wall of the channels 12 in depth.
  • the use of microchannels with a flared inlet 35 limits the surface offered for the deposition of the insulation, and thus limits the obstruction of these channels 12. The penetration of the insulating material into the channels can be limited to the depth of the flare 35.
  • the wafer 7 is fixed in the tube and the primary screen 19 is fixed to the wafer 7 in a manner similar to that explained previously with reference to Figures 2 and 3.
  • this embodiment insulating shims also applies when the primary screen 19 has an internal mechanical tension giving it a concave shape.

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  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
EP93400150A 1992-01-31 1993-01-22 Bildverstärkerröhre, insbesondere für Nahfokusröhre Expired - Lifetime EP0554145B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9201090A FR2687007B1 (fr) 1992-01-31 1992-01-31 Tube intensificateur d'image notamment du type a focalisation de proximite.
FR9201090 1992-01-31

Publications (2)

Publication Number Publication Date
EP0554145A1 true EP0554145A1 (de) 1993-08-04
EP0554145B1 EP0554145B1 (de) 1995-12-13

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EP93400150A Expired - Lifetime EP0554145B1 (de) 1992-01-31 1993-01-22 Bildverstärkerröhre, insbesondere für Nahfokusröhre

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Country Link
US (1) US5338927A (de)
EP (1) EP0554145B1 (de)
JP (1) JP3468789B2 (de)
DE (1) DE69300980T2 (de)
FR (1) FR2687007B1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0721653A1 (de) * 1993-09-29 1996-07-17 International Standard Electric Corporation Vakuumkammer für eine bildverstärkerröhre
FR2906400A1 (fr) * 2006-09-26 2008-03-28 Thales Sa Correction de distorsion d'un tube electronique intensificateur d'image.

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FR2688343A1 (fr) * 1992-03-06 1993-09-10 Thomson Tubes Electroniques Tube intensificateur d'image notamment radiologique, du type a galette de microcanaux.
FR2698482B1 (fr) * 1992-11-20 1994-12-23 Thomson Tubes Electroniques Dispositif générateur d'images par effet de luminescence.
JP2509427B2 (ja) * 1992-12-04 1996-06-19 浜松ホトニクス株式会社 イメ―ジ管
US5491331A (en) * 1994-04-25 1996-02-13 Pilot Industries, Inc. Soft x-ray imaging device
FR2777112B1 (fr) 1998-04-07 2000-06-16 Thomson Tubes Electroniques Dispositif de conversion d'une image
US6198090B1 (en) * 1999-01-25 2001-03-06 Litton Systems, Inc. Night vision device and method
KR100438752B1 (ko) * 1999-02-04 2004-07-05 컬킨 조셉 브래들리 영상 디스플레이 및 영상 증강기 시스템
US6483231B1 (en) * 1999-05-07 2002-11-19 Litton Systems, Inc. Night vision device and method
US7019446B2 (en) * 2003-09-25 2006-03-28 The Regents Of The University Of California Foil electron multiplier
US7057187B1 (en) * 2003-11-07 2006-06-06 Xradia, Inc. Scintillator optical system and method of manufacture
DE102005041109A1 (de) * 2005-08-30 2007-03-01 BSH Bosch und Siemens Hausgeräte GmbH Kapazitiver Annäherungsschalter und Haushaltsgerät mit einem solchen
DE102011077056A1 (de) * 2011-06-07 2012-12-13 Siemens Aktiengesellschaft Strahlungsdetektor und bildgebendes System
US10670740B2 (en) 2012-02-14 2020-06-02 American Science And Engineering, Inc. Spectral discrimination using wavelength-shifting fiber-coupled scintillation detectors
PL3271709T3 (pl) 2015-03-20 2023-02-20 Rapiscan Systems, Inc. Ręczny przenośny system kontroli rozpraszania wstecznego
GB2590561B (en) * 2018-06-20 2021-12-08 American Science & Eng Inc Wavelength-shifting sheet-coupled scintillation detectors
US11340361B1 (en) 2020-11-23 2022-05-24 American Science And Engineering, Inc. Wireless transmission detector panel for an X-ray scanner
CN113589637B (zh) * 2021-06-18 2023-12-01 中国工程物理研究院激光聚变研究中心 一种硬x射线灵敏的分幅相机

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Publication number Priority date Publication date Assignee Title
EP0721653A1 (de) * 1993-09-29 1996-07-17 International Standard Electric Corporation Vakuumkammer für eine bildverstärkerröhre
EP0721653A4 (de) * 1993-09-29 1997-05-28 Int Standard Electric Corp Vakuumkammer für eine bildverstärkerröhre
FR2906400A1 (fr) * 2006-09-26 2008-03-28 Thales Sa Correction de distorsion d'un tube electronique intensificateur d'image.
EP1906432A1 (de) * 2006-09-26 2008-04-02 Thales Korrektur von Bildfehler einer Elektronstrahlbildverstärkerröhre
US7728519B2 (en) 2006-09-26 2010-06-01 Thales Correction of the distortion of an image intensifier electron tube

Also Published As

Publication number Publication date
FR2687007A1 (fr) 1993-08-06
DE69300980T2 (de) 1996-05-23
JP3468789B2 (ja) 2003-11-17
JPH06267466A (ja) 1994-09-22
US5338927A (en) 1994-08-16
FR2687007B1 (fr) 1994-03-25
DE69300980D1 (de) 1996-01-25
EP0554145B1 (de) 1995-12-13

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