EP0521219A3 - - Google Patents
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- Publication number
- EP0521219A3 EP0521219A3 EP19910311763 EP91311763A EP0521219A3 EP 0521219 A3 EP0521219 A3 EP 0521219A3 EP 19910311763 EP19910311763 EP 19910311763 EP 91311763 A EP91311763 A EP 91311763A EP 0521219 A3 EP0521219 A3 EP 0521219A3
- Authority
- EP
- European Patent Office
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/087—I2L integrated injection logic
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP159268/91 | 1991-07-01 | ||
JP15926891 | 1991-07-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0521219A2 EP0521219A2 (en) | 1993-01-07 |
EP0521219A3 true EP0521219A3 (en) | 1994-08-31 |
EP0521219B1 EP0521219B1 (en) | 1998-02-25 |
Family
ID=15690065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP91311763A Expired - Lifetime EP0521219B1 (en) | 1991-07-01 | 1991-12-18 | Semiconductor device and method for its fabrication |
Country Status (4)
Country | Link |
---|---|
US (2) | US5162252A (en) |
EP (1) | EP0521219B1 (en) |
KR (1) | KR950011017B1 (en) |
DE (1) | DE69128963T2 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69232348T2 (en) * | 1991-09-24 | 2002-08-14 | Matsushita Electric Ind Co Ltd | Integrated semiconductor circuit arrangement and method for its production |
US5268312A (en) * | 1992-10-22 | 1993-12-07 | Motorola, Inc. | Method of forming isolated wells in the fabrication of BiCMOS devices |
US5369042A (en) * | 1993-03-05 | 1994-11-29 | Texas Instruments Incorporated | Enhanced performance bipolar transistor process |
JPH07235602A (en) * | 1994-02-21 | 1995-09-05 | Mitsubishi Electric Corp | Semiconductor device with iil circuit and manufacture thereof |
JP3547811B2 (en) * | 1994-10-13 | 2004-07-28 | 株式会社ルネサステクノロジ | Semiconductor device having bipolar transistor and method of manufacturing the same |
JP3159237B2 (en) * | 1996-06-03 | 2001-04-23 | 日本電気株式会社 | Semiconductor device and method of manufacturing the same |
KR100258436B1 (en) * | 1996-10-11 | 2000-06-01 | 김덕중 | Complementary bipolar transistor and method for manufacturing the same |
US6140690A (en) * | 1996-11-18 | 2000-10-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
US6165868A (en) * | 1999-06-04 | 2000-12-26 | Industrial Technology Research Institute | Monolithic device isolation by buried conducting walls |
US6894366B2 (en) * | 2000-10-10 | 2005-05-17 | Texas Instruments Incorporated | Bipolar junction transistor with a counterdoped collector region |
EP1646084A1 (en) * | 2004-10-06 | 2006-04-12 | Infineon Technologies AG | A method in the fabrication of an integrated injection logic circuit |
US20070298576A1 (en) * | 2006-06-21 | 2007-12-27 | Kuhn Kelin J | Methods of forming bipolar transistors by silicide through contact and structures formed thereby |
KR102082190B1 (en) * | 2013-08-22 | 2020-02-27 | (주) 코미코 | Aerosol coating method and plasma-resistant member formed by the same |
US20180076038A1 (en) * | 2016-09-09 | 2018-03-15 | Texas Instruments Incorporated | Method For Producing Two N-Type Buried Layers In An Integrated Circuit |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258379A (en) * | 1978-09-25 | 1981-03-24 | Hitachi, Ltd. | IIL With in and outdiffused emitter pocket |
US4404738A (en) * | 1979-05-31 | 1983-09-20 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of fabricating an I2 L element and a linear transistor on one chip |
US4470061A (en) * | 1981-01-13 | 1984-09-04 | Tokyo Shibaura Denki Kabushiki Kaisha | Integrated injection logic |
EP0093304B1 (en) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor ic and method of making the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56142661A (en) * | 1980-04-04 | 1981-11-07 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit and manufacture thereof |
JPS57164558A (en) * | 1981-04-02 | 1982-10-09 | Toshiba Corp | Semiconductor integrated circuit device |
JPS57164560A (en) * | 1981-04-02 | 1982-10-09 | Toshiba Corp | Manufacture of semiconductor integrated circuit device |
JPS59141261A (en) * | 1983-01-31 | 1984-08-13 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
JPS5967255A (en) * | 1982-10-07 | 1984-04-16 | Sumitomo Chem Co Ltd | N-phenyltetrahydrophthalamic acid derivative, its preparation and herbicide containing said derivative as active component |
JPS6052038A (en) * | 1983-08-31 | 1985-03-23 | Nec Corp | Manufacture of semiconductor device |
EP0172878B1 (en) * | 1984-02-03 | 1992-07-15 | Advanced Micro Devices, Inc. | A bipolar transistor with active elements formed in slots |
US4984048A (en) * | 1987-07-10 | 1991-01-08 | Hitachi, Ltd. | Semiconductor device with buried side contact |
ZA891937B (en) * | 1988-04-04 | 1990-11-28 | Ppg Industries Inc | Pigment grinding vehicles containing quaternary ammonium and ternary sulfonium groups |
JPH0258865A (en) * | 1988-08-24 | 1990-02-28 | Nec Corp | Semiconductor device |
-
1991
- 1991-12-13 KR KR1019910022904A patent/KR950011017B1/en not_active IP Right Cessation
- 1991-12-17 US US07/808,691 patent/US5162252A/en not_active Expired - Lifetime
- 1991-12-18 DE DE69128963T patent/DE69128963T2/en not_active Expired - Fee Related
- 1991-12-18 EP EP91311763A patent/EP0521219B1/en not_active Expired - Lifetime
-
1992
- 1992-08-05 US US07/924,986 patent/US5331198A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258379A (en) * | 1978-09-25 | 1981-03-24 | Hitachi, Ltd. | IIL With in and outdiffused emitter pocket |
US4404738A (en) * | 1979-05-31 | 1983-09-20 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of fabricating an I2 L element and a linear transistor on one chip |
US4470061A (en) * | 1981-01-13 | 1984-09-04 | Tokyo Shibaura Denki Kabushiki Kaisha | Integrated injection logic |
EP0093304B1 (en) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor ic and method of making the same |
Non-Patent Citations (2)
Title |
---|
& PATENT ABSTRACTS OF JAPAN, unexamined applications, E section, vol. 2, no. 88, July 19, 1978 THE PATENT OFFICE JAPANESE GOVERNMENT page 3907 E 78; & JP-A-53-51 983 (HITACHI) * |
PATENT ABSTRACTS OF JAPAN * |
Also Published As
Publication number | Publication date |
---|---|
US5331198A (en) | 1994-07-19 |
EP0521219A2 (en) | 1993-01-07 |
KR930003417A (en) | 1993-02-24 |
US5162252A (en) | 1992-11-10 |
EP0521219B1 (en) | 1998-02-25 |
DE69128963D1 (en) | 1998-04-02 |
KR950011017B1 (en) | 1995-09-27 |
DE69128963T2 (en) | 1998-07-30 |
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