JPS6052038A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6052038A
JPS6052038A JP58159806A JP15980683A JPS6052038A JP S6052038 A JPS6052038 A JP S6052038A JP 58159806 A JP58159806 A JP 58159806A JP 15980683 A JP15980683 A JP 15980683A JP S6052038 A JPS6052038 A JP S6052038A
Authority
JP
Japan
Prior art keywords
formed
opening
gt
lt
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58159806A
Inventor
Kimimaro Yoshikawa
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP58159806A priority Critical patent/JPS6052038A/en
Publication of JPS6052038A publication Critical patent/JPS6052038A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

Abstract

PURPOSE:To operate a semiconductor device at high speed, and to improve the degree of integration by forming an insulating film with an opening on a semiconductor substrate, forming an epitaxial layer burying the opening of the insulating film, shaping an epitaxial growth layer on the whole surface and forming an active region for an element on an opening region in the insulating film. CONSTITUTION:A high-concentration buried layer 202 is formed to a substrate 201, oxidation films 203 are shaped, and a plurality of opening sections are formed. Silicon nitride films 214 are left only on the side surfaces of the oxidation films 203. Single crystal silicon layers 204 are formed in approximately the same thickness as the oxidation films 203. Bases 205 for an I<2>L are shaped while using a resist 216 as a mask, and polycrystalline layers 206 are formed on the oxidation films and single crystal layers 206' on the single crystal silicon 204 through epitaxial growth. An I<2>L injector-section base oxidation film 208 is shaped, arsenic added polysilicon 210 is formed to collector and emitter sections for the I<2>L, and inactive base regions 217 and injector sections 209, 213 are formed.
JP58159806A 1983-08-31 1983-08-31 Manufacture of semiconductor device Pending JPS6052038A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58159806A JPS6052038A (en) 1983-08-31 1983-08-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58159806A JPS6052038A (en) 1983-08-31 1983-08-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6052038A true JPS6052038A (en) 1985-03-23

Family

ID=15701662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58159806A Pending JPS6052038A (en) 1983-08-31 1983-08-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6052038A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242073A (en) * 1985-04-19 1986-10-28 Fujitsu Ltd Manufacture of semiconductor device
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture
US5162252A (en) * 1991-07-01 1992-11-10 Matsushita Electric Industrial Co., Ltd. Method of fabricating iil and vertical complementary bipolar transistors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242073A (en) * 1985-04-19 1986-10-28 Fujitsu Ltd Manufacture of semiconductor device
JPH0467779B2 (en) * 1985-04-19 1992-10-29 Fujitsu Ltd
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture
US5162252A (en) * 1991-07-01 1992-11-10 Matsushita Electric Industrial Co., Ltd. Method of fabricating iil and vertical complementary bipolar transistors
EP0521219A2 (en) * 1991-07-01 1993-01-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for its fabrication
US5331198A (en) * 1991-07-01 1994-07-19 Matsushita Electric Industrial Co., Ltd. Semiconductor device including IIL and vertical transistors

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