EP0485830B1 - Process for the recrystallization of a pre-amorphized superficial zone of a semi-conductor - Google Patents
Process for the recrystallization of a pre-amorphized superficial zone of a semi-conductor Download PDFInfo
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- EP0485830B1 EP0485830B1 EP91118708A EP91118708A EP0485830B1 EP 0485830 B1 EP0485830 B1 EP 0485830B1 EP 91118708 A EP91118708 A EP 91118708A EP 91118708 A EP91118708 A EP 91118708A EP 0485830 B1 EP0485830 B1 EP 0485830B1
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- 238000000034 method Methods 0.000 title claims description 28
- 238000001953 recrystallisation Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 230000007704 transition Effects 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- -1 silicon ions Chemical class 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 4
- 239000010410 layer Substances 0.000 description 14
- 238000002513 implantation Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000000348 solid-phase epitaxy Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000005280 amorphization Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000035876 healing Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 244000052616 bacterial pathogen Species 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
Definitions
- the invention relates to a method for producing flat transitions in silicon by implanting silicon or germanium ions for amorphizing a surface zone, subsequently doping this surface zone and finally recrystallizing the surface zone by means of a heat treatment.
- the invention further relates to a semiconductor component which contains such a flat transition.
- Methods are also used to produce flat pn junctions in silicon, in which surface zones of single-crystalline silicon are brought into an amorphous state by implantation of silicon or germanium ions.
- Dopants such as B, BF 2 + , P or As implanted in a zone pretreated in this way are very severely restricted with regard to depth of penetration, abnormal (accelerated) diffusion and channel formation. A steep doping profile is created.
- care must be taken when choosing the temperature that the dopants do not diffuse too much so that the doping profile is retained.
- SPE solid phase epitaxy
- the invention is based on the object of specifying a method for producing flat transitions (0,1 0.1 micrometer) in silicon, in which the error-free recrystallization of the amorphous surface layer is ensured.
- an amorphous surface layer is first produced on a single-crystalline base body by implanting ions.
- a mixture of GeH4 / H2 is used as the ion source, with 70Ge or 74Ge isotopes being used for amorphization.
- the implantation energies are in the range of 50 keV - 150 keV with ion doses of 2 ⁇ 1014 cm ⁇ - 9 ⁇ 1014 cm ⁇ .
- An energy of approximately 70 keV with an ion dose of 3 - 5 ⁇ 1014 cm ⁇ has proven to be particularly advantageous.
- an implantation of 70 keV Ge ions at a dose of 3 ⁇ 1014 cm ⁇ results in an amorphous layer of approx. 85 nm thickness.
- a transition area with a thickness of approx. 15 nm adjoins the base body, in which the interface between the amorphous Layer and the crystalline material of the base body is very rough and exist in the crystalline or amorphous islands in the area of the opposite structure.
- the rough transition zone with its islands represents the seeds for the formation of lattice defects, in particular stacking errors and dislocations, during the later recrystallization.
- the amorphous surface layer is doped by implantation of B, BF 2 + , P or As ions. Abnormal diffusion and channeling effects of the implanted ions are ideally suppressed in the amorphous layer.
- a desired doping profile can be set by the choice of ion energies. Implantation energies of 25 keV at a dose of 2 ⁇ 1014 cm ⁇ have proven themselves in the case of BF 2 + ions and Ge pre-amorphization at approx. 70 keV.
- the recrystallization of the amorphous layer is preceded by a further process step, which smoothes the rough transition zone.
- the semiconductor sample is pretreated for approx. 30 - 50 min in an oven at a temperature of approx. 400 - 460 ° C in a nitrogen atmosphere. At this temperature, the amorphous layer is not yet converted, but the fractal transition zone is already smoothed, with the amorphous and crystalline islands in particular receding.
- the amorphous layer recrystallizes onto the base crystal of the cell by epitaxial growth Substrate. Since the rough transition zone was smoothed before the actual recrystallization, no stacking and dislocation errors can be detected in the previously amorphous layer after the epitaxial growth.
- a temperature of 550 ° C. over a period of 40 minutes in a nitrogen atmosphere has proven to be particularly advantageous for the solid-phase epitaxy.
- the final short-term heating activates the doping atoms at a temperature of 1000 ° C - 1100 ° C, without the doping profile being able to widen significantly during the short period of 5 to 10 seconds. Since the actual recrystallization took place at a temperature of 600 ° C and now only the doping is activated, there are no additional errors in the crystal structure in this process step.
- An example of a typical application of a flat transition described above is a bipolar high-frequency transistor. But also in other components such. B. diodes, such a flat transition can be used advantageously.
- the figure shows a cross section through a transistor, the base zone 6 of which was produced by the method according to the invention.
- the structure of such a transistor is explained below with reference to the figure.
- the buried collector connection 2 and the collector 3 are first produced on a semiconductor substrate 1 using known methods.
- the p+-doped polysilicon layer 4 serves as a base connection and as a source for the diffusion of the extrinsic Base 5.
- the intrinsic base region 6 is amorphized by implantation of germanium.
- the energy of the germanium ions is 70 keV.
- a dose of 2 ⁇ 1014 cm ⁇ is implanted.
- the previously amorphized zone is doped by implantation of BF 2 + ions with an energy of 25 keV and a dose of 3 ⁇ 1014 cm ⁇ . Since implantation is carried out in amorphous material, the doping profile corresponds to an ideal distribution. Channel formation and abnormal diffusion of the implanted ions are greatly reduced.
- the amorphized layer is recrystallized in an oven process. In the first process step, the transition region between the amorphous layer and the crystalline base crystal is smoothed at 450 ° C. The amorphous layer does not yet recrystallize in this process step, since the temperature is not high enough for solid-phase epitaxial growth. After approx. 40 min the temperature in the oven is raised to 550 ° C.
- the amorphous layer recrystallizes almost error-free within 40 minutes, since the error germs in the transition area were removed in the previous process step.
- the polysilicon 8 is applied by known methods and then doped by As implantation.
- This polysilicon layer 8 has two functions. On the one hand it serves as an emitter connection and on the other hand it acts as a source for the diffusion of the emitter 9.
- the third part of the heat treatment according to the invention follows.
- the dopants of the base zone 6 are now activated by a short-term heating to 1000-1200 ° C. and at the same time the emitter zone 9 is diffused in.
- the base width of the transistor can also be set by varying the duration of the short-term heating in the range from 5 to 30 seconds.
- surface passivation and metallization 10 are realized by known methods.
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Description
Die Erfindung betrifft ein Verfahren zur Herstellung von flachen Übergängen in Silizium durch Implantation von Silizium- oder Germanium-Ionen zur Amorphisierung einer Oberflächenzone, anschließende Dotierung dieser Oberflächenzone und abschließende Rückkristallisation der Oberflächenzone durch eine Wärmebehandlung. Des weiteren betrifft die Erfindung ein Halbleiterbauelement, das einen solchen flachen Übergang enthält.The invention relates to a method for producing flat transitions in silicon by implanting silicon or germanium ions for amorphizing a surface zone, subsequently doping this surface zone and finally recrystallizing the surface zone by means of a heat treatment. The invention further relates to a semiconductor component which contains such a flat transition.
Zur Herstellung flacher pn-Übergänge in Silizium werden auch Verfahren angewandt, bei denen Oberflächenzonen von einkristallinem Silizium durch Implantation von Silizium- oder Germanium-Ionen in einen amorphen Zustand gebracht werden. In eine auf diese Weise vorbehandelte Zone implantierte Dotierungsstoffe wie B, BF2 +, P oder As sind bezüglich Eindringtiefe, anomaler (beschleunigter) Diffusion und Kanalbildung sehr stark eingeschränkt. Es entsteht ein steiles Dotierungsprofil. Bei der Rekristallisierung der amorphen Oberflächenzone durch Festphasenepitaxiewachstum muß bei der Temperaturwahl darauf geachtet werden, daß die Dotierungsstoffe nicht zu sehr diffundieren, damit das Dotierungsprofil erhalten bleibt.Methods are also used to produce flat pn junctions in silicon, in which surface zones of single-crystalline silicon are brought into an amorphous state by implantation of silicon or germanium ions. Dopants such as B, BF 2 + , P or As implanted in a zone pretreated in this way are very severely restricted with regard to depth of penetration, abnormal (accelerated) diffusion and channel formation. A steep doping profile is created. When recrystallizing the amorphous surface zone by solid-phase epitaxial growth, care must be taken when choosing the temperature that the dopants do not diffuse too much so that the doping profile is retained.
In "J. Appl. Phys. 54, No. 12, December 1983, S. 6879 - 6889", wird ein Verfahren beschrieben, bei dem die Rekristallisation bei einer Temperatur von 925 °C für eine Zeitdauer von 20 min stattfindet."J. Appl. Phys. 54, No. 12, December 1983, pp. 6879-6889" describes a process in which the recrystallization takes place at a temperature of 925 ° C. for a period of 20 minutes.
In der EP 0 201 585 A1 (= WO-A-86/03334) wird ein Zwei-Stufenprozeß zur Rekristallisierung einer amorphen Oberflächenzone angegeben, bei der die Halbleiterprobe zunächst für ca. 30 min auf 600 °C gehalten wird, wobei die amorphe Schicht durch Festphasenepitaxie (SPE) rekristallisiert, und anschließend innerhalb einer Sekunde auf über 1000 °C erhitzt wird, wodurch die implantierten Dotierungsstoffe aktiviert werden.EP 0 201 585 A1 (= WO-A-86/03334) specifies a two-stage process for recrystallizing an amorphous surface zone, in which the semiconductor sample is initially held at 600 ° C. for about 30 minutes, the amorphous layer being used recrystallized by solid phase epitaxy (SPE), and then is heated to over 1000 ° C within a second, whereby the implanted dopants are activated.
Beide bekannten Verfahren haben den Nachteil, daß sich im rekristallisierten Zustand an der Stelle, an der sich der Übergangsbereich von amorphem zu kristallinem Material befunden hat, Fehler in der Kristallstruktur vorfinden. Bei diesen Fehlern handelt es sich in erster Linie um Stapel- und Versetzungsfehler, die die elektrischen Eigenschaften des Übergangs stark beeinträchtigen.Both known methods have the disadvantage that, in the recrystallized state, there are defects in the crystal structure at the point at which the transition region from amorphous to crystalline material was located. These errors are primarily stacking and misalignment errors that severely affect the electrical properties of the transition.
Aus Appl. Phys. Lett. 52 (12), 21.03.1988, Seiten 963 - 965 ist ein Verfahren zum Herstellen von flachen p⁺-n Übergängen durch niederenergetisches Implantieren von BF2 +-Ionen in durch Germanium voramorphisiertes Silizium bekannt, bei dem der Kristall zunächst durch Festphasenepitaxie bei 600°C und einer Dauer von 30 min in einem Ofen unter Stickstoffatmosphäre wiederhergestellt wird. Anschließend wird bei drei unterschiedlichen Temperaturen von 950, 1000 und 1050 °C für eine Dauer von jeweils 10 sec ein Kurzzeit-Ausheilschritt (RTA) durchgeführt. Die Autoren kommen zu dem Ergebnis, daß bei RTA-Temperaturen über 950 °C die Bor-Diffusion die Tiefe des pn-Übergangs bestimmt und daß die Voramorphisierung des Silizium-Kristalls durch Germanium für höhere RTA-Temperaturen keine Vorteile in bezug auf die Tiefe des Übergangs gegenüber der Implantierung in den Kristall bringt.From appl. Phys. Lett. 52 (12), March 21, 1988, pages 963-965, a method for producing flat p⁺-n transitions by low-energy implantation of BF 2 + ions in silicon pre-amorphized by germanium is known, in which the crystal is first characterized by solid-phase epitaxy at 600 ° C and a duration of 30 min in an oven under a nitrogen atmosphere. A short-term healing step (RTA) is then carried out at three different temperatures of 950, 1000 and 1050 ° C for a period of 10 seconds each. The authors conclude that at RTA temperatures above 950 ° C the boron diffusion determines the depth of the pn junction and that the pre-amorphization of the silicon crystal by germanium for higher RTA temperatures has no advantages with respect to the depth of the Transition versus implantation in the crystal.
Aus "IEEE 1990 Bipolar Circuits and Technology Meeting 7.3, S. 162 - 165" ist ein Verfahren bekannt, bei dem vor der Rekristallisation der Übergangsbereich zwischen amorpher Oberflächenzone und kristallinem Basismaterial in einem Temperaturprozeß bei 450 °C für eine Zeitdauer von 30 min geglättet wird. Bei einem sich anschließenden Kurzzeitausheilungsprozeß (RTA) bei 1075 °C und 10 sec rekristallisiert die Oberflächenzone und gleichzeitig werden die Dotierstoffe aktiviert. Nach Anwendung dieses bekannten Verfahrens konnten zwar keine Fehler mehr nachgewiesen werden, die ihren Ursprung in dem Übergangsbereich haben, dafür muß aber aufgrund der hohen RTA-Temperatur eine verstärkte Bor-Diffusion in Kauf genommen werden.From "IEEE 1990 Bipolar Circuits and Technology Meeting 7.3, pp. 162-165" a method is known in which the transition region between the amorphous surface zone and the crystalline base material is smoothed in a temperature process at 450 ° C. for a period of 30 minutes before recrystallization . In a subsequent short-term healing process (RTA) at 1075 ° C and 10 sec, the surface zone recrystallizes and at the same time the dopants are activated. After using this known method, no errors that originated in have the transition area, but due to the high RTA temperature, an increased boron diffusion must be accepted.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren zur Herstellung von flachen Übergängen (≤ 0,1 Mikrometer) in Silizium anzugeben, bei der die fehlerfreie Rekristallisation der amorphen Oberflächenschicht gewährleistet wird.The invention is based on the object of specifying a method for producing flat transitions (0,1 0.1 micrometer) in silicon, in which the error-free recrystallization of the amorphous surface layer is ensured.
Diese Aufgabe wird durch ein Verfahren nach den Merkmalen des Anspruchs 1 gelöst. Die weitere vorteilhafte Ausgestaltung der Erfindung ergibt sich aus den Unteransprüchen.This object is achieved by a method according to the features of
Die Erfindung wird im folgenden anhand eines Ausführungsbeispiels erläutert.The invention is explained below using an exemplary embodiment.
Zur Herstellung eines flachen Übergangs in Silizium wird zunächst eine amorphe Oberflächenschicht auf einem einkristallinen Grundkörper durch Implantation von Ionen erzeugt. Dabei wird eine Mischung von GeH₄/H₂ als Ionenquelle benutzt, wobei ⁷⁰Ge- oder ⁷⁴Ge-Isotope zur Amorphisierung verwendet werden. Die Implantationsenergien liegen im Bereich von 50 keV - 150 keV bei Ionendosen von 2 · 10¹⁴ cm⁻ - 9 · 10¹⁴ cm⁻. Als besonders vorteilhaft hat sich eine Energie von ca. 70 keV bei einer Ionendosis von 3 - 5 · 10¹⁴ cm⁻ herausgestellt.To produce a flat transition in silicon, an amorphous surface layer is first produced on a single-crystalline base body by implanting ions. A mixture of GeH₄ / H₂ is used as the ion source, with ⁷⁰Ge or ⁷⁴Ge isotopes being used for amorphization. The implantation energies are in the range of 50 keV - 150 keV with ion doses of 2 · 10¹⁴ cm⁻ - 9 · 10¹⁴ cm⁻. An energy of approximately 70 keV with an ion dose of 3 - 5 · 10¹⁴ cm⁻ has proven to be particularly advantageous.
So ergibt beispielsweise eine Implantation von 70 keV Ge-Ionen bei einer Dosis von 3 · 10¹⁴ cm⁻ eine amorphe Schicht von ca. 85 nm Dicke. Zum Grundkörper hin schließt sich ein Übergangsbereich mit einer Dicke von ca. 15 nm an, in dem die Grenzfläche zwischen der amorphen Schicht und dem kristallinen Material des Grundkörpers sehr rauh ist und in dem kristalline bzw. amorphe Inseln im Gebiet der jeweils entgegengesetzten Struktur existieren. Die rauhe Übergangszone mit ihren Inseln stellt Keime für die Bildung von Gitterdefekten, insbesondere Stapelfehler und Versetzungen, bei der späteren Rekristallisation dar.For example, an implantation of 70 keV Ge ions at a dose of 3 · 10¹⁴ cm⁻ results in an amorphous layer of approx. 85 nm thickness. A transition area with a thickness of approx. 15 nm adjoins the base body, in which the interface between the amorphous Layer and the crystalline material of the base body is very rough and exist in the crystalline or amorphous islands in the area of the opposite structure. The rough transition zone with its islands represents the seeds for the formation of lattice defects, in particular stacking errors and dislocations, during the later recrystallization.
Im nächsten Verfahrensschritt wird die amorphe Oberflächenschicht durch Implantation von B-, BF2 +-, P- oder As-Ionen dotiert. In der amorphen Schicht sind anomale Diffusion und Kanalbildungseffekte der implantierten Ionen in idealer Weise unterdrückt. Durch die Wahl der Ionenenergien kann ein gewünschtes Dotierungsprofil eingestellt werden. Implantationsenergien von 25 keV bei einer Dosis von 2 · 10¹⁴ cm⁻ haben sich im Falle von BF2 +-Ionen und Ge-Voramorphisierung bei ca. 70 keV bewährt.In the next process step, the amorphous surface layer is doped by implantation of B, BF 2 + , P or As ions. Abnormal diffusion and channeling effects of the implanted ions are ideally suppressed in the amorphous layer. A desired doping profile can be set by the choice of ion energies. Implantation energies of 25 keV at a dose of 2 · 10¹⁴ cm⁻ have proven themselves in the case of BF 2 + ions and Ge pre-amorphization at approx. 70 keV.
Der Rekristallisation der amorphen Schicht geht ein weiterer Verfahrensschritt voraus, der eine Glättung der rauhen Übergangszone bewirkt. Dazu wird die Halbleiterprobe ca. 30 - 50 min in einem Ofen bei einer Temperatur von ca. 400 - 460 °C in einer Stickstoffatmosphäre vorbehandelt. Bei dieser Temperatur findet noch keine Umwandlung der amorphen Schicht statt, die fraktale Übergangszone wird aber bereits geglättet, wobei sich insbesondere die amorphen und kristallinen Inseln zurückbilden.The recrystallization of the amorphous layer is preceded by a further process step, which smoothes the rough transition zone. For this purpose, the semiconductor sample is pretreated for approx. 30 - 50 min in an oven at a temperature of approx. 400 - 460 ° C in a nitrogen atmosphere. At this temperature, the amorphous layer is not yet converted, but the fractal transition zone is already smoothed, with the amorphous and crystalline islands in particular receding.
Bei der anschließenden Wärmebehandlung bei einer Temperatur von 500 - 600 °C für eine Zeitdauer von 30 - 50 min rekristallisiert die amorphe Schicht durch festphasenepitaktisches Wachstum auf den Basiskristall des Substrats. Da die rauhe Übergangszone vor der eigentlichen Rekristallisation geglättet wurde, sind nach dem epitaktischen Wachstum keine Stapel- und Versetzungsfehler in der zuvor amorphen Schicht nachzuweisen. Insbesondere hat sich für die Festphasenepitaxie eine Temperatur von 550 °C bei einer Zeitdauer von 40 min in einer Stickstoffatmosphäre als besonders vorteilhaft erwiesen.During the subsequent heat treatment at a temperature of 500-600 ° C. for a period of 30-50 min, the amorphous layer recrystallizes onto the base crystal of the cell by epitaxial growth Substrate. Since the rough transition zone was smoothed before the actual recrystallization, no stacking and dislocation errors can be detected in the previously amorphous layer after the epitaxial growth. In particular, a temperature of 550 ° C. over a period of 40 minutes in a nitrogen atmosphere has proven to be particularly advantageous for the solid-phase epitaxy.
Die abschließende Kurzzeiterhitzung aktiviert die Dotierungsatome bei einer Temperatur von 1000 °C - 1100 °C, ohne daß sich das Dotierungsprofil während der kurzen Zeitdauer von 5 - 10 sec wesentlich verbreitern kann. Da die eigentliche Rekristallisierung bei einer Temperatur von 600 °C stattgefunden hat und nun lediglich die Dotierung aktiviert wird, entstehen in diesem Verfahrensschritt keine zusätzlichen Fehler im Kristallaufbau.The final short-term heating activates the doping atoms at a temperature of 1000 ° C - 1100 ° C, without the doping profile being able to widen significantly during the short period of 5 to 10 seconds. Since the actual recrystallization took place at a temperature of 600 ° C and now only the doping is activated, there are no additional errors in the crystal structure in this process step.
Ein Beispiel für einen typischen Anwendungsfall eines oben beschriebenen flachen Übergangs ist ein bipolarer Hochfrequenztransistor. Aber auch in anderen Bauelementen wie z. B. Dioden kann ein solcher flacher Übergang vorteilhaft angewandt werden.An example of a typical application of a flat transition described above is a bipolar high-frequency transistor. But also in other components such. B. diodes, such a flat transition can be used advantageously.
Die Figur zeigt einen Querschnitt durch einen Transistor, dessen Basiszone 6 nach dem erfindungsgemäßen Verfahren hergestellt wurde. Im folgenden sei anhand der Figur der Aufbau eines solchen Transistors erläutert. Auf einem Halbleitersubstrat 1 werden nach bekannten Verfahren zunächst der vergrabene Kollektoranschluß 2 und der Kollektor 3 hergestellt. Die p⁺-dotierte Polysiliziumschicht 4 dient als Basisanschluß und als Quelle zum Eindiffundieren der extrinsischen Basis 5. Nach weiteren Maskierungsschritten wird die intrinsische Basisregion 6 durch Implantation von Germanium amorphisiert. Die Energie der Germanium-Ionen beträgt dabei 70 keV. Es wird eine Dosis von 2 · 10¹⁴ cm⁻ implantiert. Anschließend wird die zuvor amorphisierte Zone durch Implantation von BF2 +-Ionen mit einer Energie von 25 keV und einer Dosis von 3 · 10¹⁴ cm⁻ dotiert. Da in amorphes Material implantiert wird, entspricht das Dotierungsprofil einer idealen Verteilung. Kanalbildung und anomale Diffusion der implantierten Ionen sind stark reduziert. Nun wird die amorphisierte Schicht in einem Ofenprozeß rekristallisiert. Im ersten Prozeßschritt wird bei 450 °C der Übergangsbereich zwischen der amorphen Schicht und dem kristallinen Basiskristall geglättet. Eine Rekristallisation der amorphen Schicht findet bei diesem Prozeßschritt noch nicht statt, da die Temperatur für festphasenepitaktisches Wachstum nicht genügend hoch ist. Nach ca. 40 min wird die Temperatur im Ofen auf 550 °C erhöht. In diesem zweiten Prozeßschritt rekristallisiert die amorphe Schicht innerhalb von 40 min nahezu fehlerfrei, da die Fehlerkeime im Übergangsbereich im vorausgegangenen Prozeßschritt entfernt worden sind. Bevor nun mittels einer Kurzzeiterhitzung die Dotierungsstoffe aktiviert werden, wird nach bekannten Verfahren das Polysilizium 8 aufgebracht und anschließend durch As-Implantation dotiert. Diese Polysiliziumschicht 8 hat zwei Funktionen. Zum einen dient sie als Emitteranschluß und zum anderen wirkt sie als Quelle für das Eindiffundieren des Emitters 9. Nun folgt der dritte Teil der erfindungsgemäßen Wärmebehandlung. Durch eine Kurzzeiterhitzung auf 1000 - 1200 °C werden nun die Dotierungsstoffe der Basiszone 6 aktiviert und gleichzeitig wird die Emitterzone 9 eindiffundiert. Durch Variation der Zeitdauer der Kurzzeiterhitzung im Bereich von 5 - 30 sec kann außerdem die Basisweite des Transistors eingestellt werden. Abschließend werden Oberflächenpassivierung und Metallisierung 10 durch bekannte Verfahren realisiert.The figure shows a cross section through a transistor, the
Mit auf diese Weise produzierten Transistoren werden Grenzfrequenzen von ca. 30 GHz erreicht.With transistors produced in this way, limit frequencies of approximately 30 GHz are reached.
Claims (6)
- Method for producing a semiconductor arrangement of silicon with a surface region of a small penetration depth, the production of which is carried out by implanting ions of the fourth main group in the surface of a single-crystal semiconductor body, which ions make the surface region amorphous, then doping the surface region by means of implanted impurities and, finally, recrystallising the amorphous layer by a heat treatment,- wherein the heat treatment consists of a first furnace process step which continues at a temperature of 400 - 460°C for 30 - 50 minutes, during which time no recrystallisation of the amorphous layer yet takes place, although the transition region between the amorphous surface region and the single-crystal semiconductor body is already smoothed,- which step is followed by a second furnace process step which continues at a temperature of 500 - 600°C for 30 to 50 minutes and the temperature of which is thus sufficiently high for the amorphous surface region to recrystallise and sufficiently low to maintain a low level of mobility of the implanted impurity atoms,- which step is followed by a final short-time heating step which is continued at a temperature of 1000 - 1200°C for 5 - 30 seconds, the temperature of which is sufficiently high to activate the implanted impurity atoms and the duration of which is thus sufficiently short to maintain a low level of redistribution of the impurities.
- Method according to claim 1, characterised in that the surface region is made amorphous by implanting germanium or silicon ions.
- Method according to claim 1 or 2, characterised in that the surface region is made amorphous by implanting germanium ions with an energy of approximately 70 keV and a dose of approximately 3·10¹⁴cm⁻.
- Method according to any one of claims 1 to 3, characterised in that the surface region is doped by implanting B, BF2 +, P or As.
- Method according to any one of claims 1 to 4, characterised in that the surface region is doped by implanting BF2 + with an energy of 15 keV - 25 keV and a dose of 3·10¹³cm⁻-3·10¹⁴cm⁻.
- Use of the method according to any one of the preceding claims for producing the base region of a high-frequency transistor.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE4035842A DE4035842A1 (en) | 1990-11-10 | 1990-11-10 | METHOD FOR RECRISTALLIZING PREAMORPHIZED SEMICONDUCTOR SURFACE ZONES |
DE4035842 | 1990-11-10 |
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EP0485830A1 EP0485830A1 (en) | 1992-05-20 |
EP0485830B1 true EP0485830B1 (en) | 1996-03-27 |
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EP91118708A Expired - Lifetime EP0485830B1 (en) | 1990-11-10 | 1991-11-02 | Process for the recrystallization of a pre-amorphized superficial zone of a semi-conductor |
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US (1) | US5254484A (en) |
EP (1) | EP0485830B1 (en) |
JP (1) | JP2585489B2 (en) |
DE (2) | DE4035842A1 (en) |
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WO2005062352A1 (en) * | 2003-12-18 | 2005-07-07 | Koninklijke Philips Electronics N.V. | A semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing same |
CN100456426C (en) * | 2003-12-22 | 2009-01-28 | Nxp股份有限公司 | A semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same |
CN100389489C (en) * | 2003-12-30 | 2008-05-21 | 中芯国际集成电路制造(上海)有限公司 | Low energy dosage monitoring using wafer impregnating machine |
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- 1991-11-02 DE DE59107615T patent/DE59107615D1/en not_active Expired - Lifetime
- 1991-11-02 EP EP91118708A patent/EP0485830B1/en not_active Expired - Lifetime
- 1991-11-08 JP JP3292664A patent/JP2585489B2/en not_active Expired - Fee Related
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HEIDELBERG DE Seiten 147 - 155; WURM ET AL: 'Modulated optical reflectance measurements on amorphous silicon layers and detection of residual defects' * |
Also Published As
Publication number | Publication date |
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US5254484A (en) | 1993-10-19 |
EP0485830A1 (en) | 1992-05-20 |
DE4035842A1 (en) | 1992-05-14 |
JPH06342805A (en) | 1994-12-13 |
JP2585489B2 (en) | 1997-02-26 |
DE4035842C2 (en) | 1993-03-11 |
DE59107615D1 (en) | 1996-05-02 |
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