EP0442894A1 - Aus einer lösung niedergeschlagene boride und boridvorläufer - Google Patents

Aus einer lösung niedergeschlagene boride und boridvorläufer

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Publication number
EP0442894A1
EP0442894A1 EP19890910280 EP89910280A EP0442894A1 EP 0442894 A1 EP0442894 A1 EP 0442894A1 EP 19890910280 EP19890910280 EP 19890910280 EP 89910280 A EP89910280 A EP 89910280A EP 0442894 A1 EP0442894 A1 EP 0442894A1
Authority
EP
European Patent Office
Prior art keywords
zirconium
complex
hafnium
metal boride
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19890910280
Other languages
English (en)
French (fr)
Inventor
Frederick Nye Tebbe
Ralph Thomas Baker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of EP0442894A1 publication Critical patent/EP0442894A1/de
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/06—Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
    • C01B6/10—Monoborane; Diborane; Addition complexes thereof

Definitions

  • Metal borides are hard, refractory, highly conductive and chemically inert materials which have many potential applications in the ceramic, electronic and optical industries. Obstacles to the development of uses for the borides have been that high temperatures or vacuum conditions have been required for their synthesis.
  • the present invention relates to novel zirconium and hafnium boride precursor complexes and processes for their preparation by deposition from solution.
  • the present invention further relates to the metal borides obtained upon heating the novel precursors at mild temperatures and ambient pressure.
  • metal borides Several methods for the preparation of metal borides are known including direct synthesis from the elements, reduction of mixtures of metal oxides and boron oxide by carbon, reduction of metal oxides wit boron carbide and carbon, and reduction of mixtures of metal halide and boron trihalide by hydrogen. Each of these requires high temperatures, in excess of about 1200°C, usually near 2000°C. More recently metal borides have been synthesized by thermal decomposition of gaseous meta borohydrides at lower temperatures.
  • Titanium diboride, zirconium diboride and hafnium diboride thin films were obtained by using gaseous chemical vapor deposition at about 200°C of the respective tetrahydroborate precursors; see Jensen, J. A., et al., .T. Am. Ch ⁇ m. Soc.. ___&, 1643-1544 (1988).
  • the synthesis of zirconium boride, ZrB 2 / from zirconium borohydride, Zr(BH 4 ) 4 was explored by a variety of methods including gaseous chemical vapor deposition in a hot tube, laser chemical vapor deposition with both continuous-wave and pulsed lasers, and continuous-wave laser synthesis of fine powders.
  • FIGURES Figure 1 is a thermogravimetric analysis (TGA) of the product of Example 2.
  • FIG. 1 is a thermogravimetric analysis (TGA) of the product of Example 8.
  • One aspect of the present invention relates to novel metal boride precursor complexes.
  • One such complex obtained by the thermolysis of the appropriate metal borohydride comprises
  • M is zirconium or hafnium; x is from about 0.5 to about 2; y is from 0 to about 3, provided that
  • the boron to metal ratio in this complex is about 4.
  • This complex is generated by a process of the present invention, the liquid phase thermolysis of the corresponding metal borohydride, M(BH 4 ) 4 .
  • the borohydride is heated neat, or in a hydrocarbon solvent, such as toluene or heptane, to a temperature of at least about 100°C in an inert atmosphere. Suitable inert atmospheres include argon, nitrogen or helium. At about 100°C, heating for several days (5 to 10) is required. At higher temperatures a shorter heating period is required.
  • the complex is obtained as a mixture of a soluble intermediate and a black insoluble solid according to the following reaction:
  • the soluble intermediate (BH 4 ) 3 M(B 2 H 6 )M(BH 4 ) 3 has been characterized.
  • the conversion of (BH 4 ) ⁇ ligands into (B 2 H 6 ) 2 ⁇ bridges leads to a mixture of oligomers having the empirical formula (I), [M(B 2 Hg) ⁇ (BH 4 ) y ] n . Heating this mixture above about 200°C liberates more hydrogen with formation of the metal borides MB Z wherein z is about 4.
  • a further metal boride precursor complex of the present invention comprises a mixture of oligomers of formula (II), obtained by reaction of the appropriate metal borohydride with a Lewis base,
  • M zirconium or hafnium; and x is from 0 to 9; and n is at least 4.
  • This complex has a boron to metal ratio of about 2.
  • Another aspect of the present invention is a process for the generation of the above complex of formula (II) from solution comprising contacting a solution of M(BH 4 ) 4 wherein M is zirconium or hafnium with a Lewis base (LB) to yield the desired precursor complex as a solid precipitate or film.
  • This reaction is as follows:
  • the metal borane complex of formula (II) precipitates as a black solid. Heating the solid of formula (II) above about 200°C yields the metal boride MB ⁇ wherein x is about 2.
  • Suitable Lewis bases for use in this reaction sequence include phosphines, arsines, amines and ethers. Preferred are the phosphines, especially aryl- or alkylphosphines having a cone angle greater than 135°. For further discussion of cone angle, see Rahman et al., Orqanometallics, £, 650-658 (1987). Most preferred are the arylphosphines.
  • phosphines useful herein include tri-t-butylphosphine, tricyclohexylphosphine, triphenylphosphine, tri-p-tolylphosphine, methyldiphenylphosphine, triisopropylphosphine, bis(diphenylphosphino)ethane, bis(diphenylphosphino)propane, bis(diphenylphos- phino)butane, or bis(di-p-tolylphosphino)ethane.
  • the above reactions using the Lewis base are conducted at a temperature of from about -20°C to about 25°C for a period of from about 1 to about 24 hours.
  • the concentration of the Lewis base is determined so as to prevent precipitation of colorless H3B-LB.
  • the product of formula (II) precipitates as a black film or solid and is washed extensively with fresh solvent to ensure removal of any H3B-LB.
  • the composition of the solid has an empirical formula MB ⁇ .8-2.0 H 3-6• Heating the solid above 200°C yields a metal boride coating of approximate composition MB Z wherein z is about 1.6-1.9.
  • the complexes of the present invention are useful as precursors to metal borides.
  • the metal borides have many uses in the ceramic, electronic and optical industries. Examples include their use as films for microelectronic applications, ceramic powders, coatings for electrodes or metal cutting tools, or coatings in nozzles, valves and the like, in the aerospace industry.
  • EXAMPLE 1 The following Example describes the formation of a Zr boride precursor via thermolysis of neat Zr(BH 4 ) 4 at 100°C.
  • EXAMPLE 2 This example describes the isolation of a white, volatile intermediate formed in the thermal decomposition of Hf(BH 4 ) 4 , and a reddish-brown, non-volatile precursor of hafnium boride, and includes a thermogravimetric analysis.
  • Hf(BH 4 ) 4 1.0 g was heated in a closed 10 mL stainless steel pressure vessel for 3 hr at 120°C. At ambient temperature, the vessel was opened and gases were allowed to escape. The remaining products were washed out of the vessel with toluene. Under a pressure of ca. 0.1 millitorr, toluene was evaporated from the mixture at ambient temperature to leave a residue of 0.330 g of solids.
  • EXAMPLE 6 The following Example describes the reaction of Zr(BH 4 ) 4 and 2 equivalents of P(t-Bu) 3 and shows- that little B is lost upon heating the precursor to 200°C.
  • a solution of 2.69 g (13.3 mmol) P(t-Bu) 3 in 10 mL of toluene was added to a solution of 1.00 g (6.65 mmol) Zr(BH ) in 20 mL of toluene at -100°C.
  • the solution turned from yellow to amber to dark brown.
  • the resulting blac : x solid was filtered off and dried in vacuo for 10 hr to yield 814 mg.
  • Example 7 The following Example is a repeat of Example 5 and includes the Thermogravimetric Analysis (TGA) which shows little weight loss at 200-750°C.
  • TGA Thermogravimetric Analysis
  • EXAMPLE 8 The following Example describes the reaction of Zr(BH 4 ) 4 with 2 equivalents of PPh 3 and includes a thermogravimetric analysis (TGA) which showed only 7% weight loss, which all occurred below 200°C.
  • TGA thermogravimetric analysis
  • EXAMPLE 9 Using a cold well inside a nitrogen glove box, a solution of 539 mg (2.05 mmol) PPh 3 in 20 mL of toluene was added to a solution of 151 mg (1 mmol) Zr(BH 4 ) 4 in 10 mL of toluene at -100°C. The reaction vessel was then sealed, removed from the glove box and attached to the high vacuum line. After three freeze-pump-thaw cycles the reaction was warmed to 0°C using an ice bath. After 20 hr the non-condensable gases were measured using a Toepler pump and determined to be 0.45 mmol H 2 /Zr.
  • Example 10 The following Example taken together with Example 9 shows that the black solid precursor loses H 2 at 25°C (this example at 25°C gives 0.85 mmol H 2 /mmol Zr while the Example 9 kept at 0°C only gave 0.45 mmol H /mmol Zr) .

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
EP19890910280 1989-09-08 1989-09-08 Aus einer lösung niedergeschlagene boride und boridvorläufer Withdrawn EP0442894A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1989/003883 WO1991003420A1 (en) 1989-09-08 1989-09-08 Borides and boride precursors deposited from solution

Publications (1)

Publication Number Publication Date
EP0442894A1 true EP0442894A1 (de) 1991-08-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890910280 Withdrawn EP0442894A1 (de) 1989-09-08 1989-09-08 Aus einer lösung niedergeschlagene boride und boridvorläufer

Country Status (2)

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EP (1) EP0442894A1 (de)
WO (1) WO1991003420A1 (de)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1431701A1 (de) * 1965-07-06 1968-11-28 Kloeckner Werke Ag Fahrbarer Gabel- und Hubstapler
US4282195A (en) * 1975-02-03 1981-08-04 Ppg Industries, Inc. Submicron titanium boride powder and method for preparing same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9103420A1 *

Also Published As

Publication number Publication date
WO1991003420A1 (en) 1991-03-21

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