EP0410794A2 - Photoréserve de type négatif sensible dans l'UV lointain, contenant des groupes maléimides - Google Patents
Photoréserve de type négatif sensible dans l'UV lointain, contenant des groupes maléimides Download PDFInfo
- Publication number
- EP0410794A2 EP0410794A2 EP90308280A EP90308280A EP0410794A2 EP 0410794 A2 EP0410794 A2 EP 0410794A2 EP 90308280 A EP90308280 A EP 90308280A EP 90308280 A EP90308280 A EP 90308280A EP 0410794 A2 EP0410794 A2 EP 0410794A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- alkyl
- composition
- resin
- maleimide
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38649089A | 1989-07-28 | 1989-07-28 | |
US386490 | 1989-07-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0410794A2 true EP0410794A2 (fr) | 1991-01-30 |
EP0410794A3 EP0410794A3 (en) | 1991-09-25 |
Family
ID=23525802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19900308280 Withdrawn EP0410794A3 (en) | 1989-07-28 | 1990-07-27 | Maleimide containing, negative working deep uv photoresist |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0410794A3 (fr) |
JP (1) | JPH03192260A (fr) |
KR (1) | KR910003448A (fr) |
CA (1) | CA2020378A1 (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0499271A1 (fr) * | 1991-02-15 | 1992-08-19 | Kawasaki Steel Corporation | Résine photosensible |
EP0601974A1 (fr) * | 1992-12-04 | 1994-06-15 | OCG Microelectronic Materials Inc. | Photoréserve positive avec des propriétés améliorés |
EP0652485A1 (fr) * | 1993-11-08 | 1995-05-10 | AT&T Corp. | Procédé de fabrication d'un dispositif |
US5558978A (en) * | 1993-12-21 | 1996-09-24 | Ocg Microelectronic Materials, Inc. | Photoresist compositions containing copolymers having acid-labile groups and recurring units derived from either N-(hydroxymethyl)maleimide or N-(acetoxymethyl)maleimide or both |
WO1997033206A1 (fr) * | 1996-03-07 | 1997-09-12 | Clariant International, Ltd. | Processus de traitement thermique de composition de photoresine positive |
WO1998007759A1 (fr) * | 1996-08-23 | 1998-02-26 | First Chemical Corporation | Procedes de polymerisation a l'aide de maleimides aliphatiques |
US6150431A (en) * | 1997-05-27 | 2000-11-21 | First Chemical Corporation | Aromatic maleimides and methods of using the same |
US6555593B1 (en) | 1998-01-30 | 2003-04-29 | Albemarle Corporation | Photopolymerization compositions including maleimides and processes for using the same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206117A (en) * | 1991-08-14 | 1993-04-27 | Labadie Jeffrey W | Photosensitive polyamic alkyl ester composition and process for its use |
KR101927829B1 (ko) * | 2011-03-29 | 2018-12-11 | 닛산 가가쿠 가부시키가이샤 | 네가티브형 감광성 수지 조성물 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269262A (ja) * | 1985-09-24 | 1987-03-30 | Toshiba Corp | 感光性組成物 |
JPS62229140A (ja) * | 1986-03-31 | 1987-10-07 | Toshiba Corp | 感光性組成物 |
-
1990
- 1990-07-04 CA CA002020378A patent/CA2020378A1/fr not_active Abandoned
- 1990-07-27 JP JP2201020A patent/JPH03192260A/ja active Pending
- 1990-07-27 EP EP19900308280 patent/EP0410794A3/en not_active Withdrawn
- 1990-07-27 KR KR1019900011479A patent/KR910003448A/ko not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269262A (ja) * | 1985-09-24 | 1987-03-30 | Toshiba Corp | 感光性組成物 |
JPS62229140A (ja) * | 1986-03-31 | 1987-10-07 | Toshiba Corp | 感光性組成物 |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 11, no. 264 (P-610)(2711) 27 August 1987, & JP-A-62 69262 (TOSHIBA CORP.) 30 March 1987, * |
PATENT ABSTRACTS OF JAPAN vol. 12, no. 95 (P-681)(2942) 29 March 1988, & JP-A-62 229140 (TOSHIBA CORP.) 07 October 1987, * |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0499271A1 (fr) * | 1991-02-15 | 1992-08-19 | Kawasaki Steel Corporation | Résine photosensible |
EP0601974A1 (fr) * | 1992-12-04 | 1994-06-15 | OCG Microelectronic Materials Inc. | Photoréserve positive avec des propriétés améliorés |
US5369200A (en) * | 1992-12-04 | 1994-11-29 | Ciba-Geigy Ag | Positive photoresist having improved processing properties |
US5397680A (en) * | 1992-12-04 | 1995-03-14 | Ciba-Geigy Ag | Positive photoresist having improved processing properties |
EP0652485A1 (fr) * | 1993-11-08 | 1995-05-10 | AT&T Corp. | Procédé de fabrication d'un dispositif |
US5558978A (en) * | 1993-12-21 | 1996-09-24 | Ocg Microelectronic Materials, Inc. | Photoresist compositions containing copolymers having acid-labile groups and recurring units derived from either N-(hydroxymethyl)maleimide or N-(acetoxymethyl)maleimide or both |
WO1997033206A1 (fr) * | 1996-03-07 | 1997-09-12 | Clariant International, Ltd. | Processus de traitement thermique de composition de photoresine positive |
WO1998007759A1 (fr) * | 1996-08-23 | 1998-02-26 | First Chemical Corporation | Procedes de polymerisation a l'aide de maleimides aliphatiques |
US6034150A (en) * | 1996-08-23 | 2000-03-07 | University Of Southern Mississippi | Polymerization processes using aliphatic maleimides |
US6369124B1 (en) | 1996-08-23 | 2002-04-09 | First Chemical Corporation | Polymerization processes using aliphatic maleimides |
US6855745B2 (en) | 1996-08-23 | 2005-02-15 | Albemarle Corporation | Polymerization processes using aliphatic maleimides |
US6150431A (en) * | 1997-05-27 | 2000-11-21 | First Chemical Corporation | Aromatic maleimides and methods of using the same |
US6153662A (en) * | 1997-05-27 | 2000-11-28 | University Of Southern Mississippi | Aromatic maleimides and methods of using the same |
US6555593B1 (en) | 1998-01-30 | 2003-04-29 | Albemarle Corporation | Photopolymerization compositions including maleimides and processes for using the same |
Also Published As
Publication number | Publication date |
---|---|
CA2020378A1 (fr) | 1991-01-29 |
KR910003448A (ko) | 1991-02-27 |
EP0410794A3 (en) | 1991-09-25 |
JPH03192260A (ja) | 1991-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4968581A (en) | High resolution photoresist of imide containing polymers | |
US6723488B2 (en) | Photoresist composition for deep UV radiation containing an additive | |
US6277750B1 (en) | Composition for bottom reflection preventive film and novel polymeric dye for use in the same | |
US5998092A (en) | Water soluble negative-working photoresist composition | |
US4837124A (en) | High resolution photoresist of imide containing polymers | |
JP2623309B2 (ja) | レジストパターンを得る方法 | |
US4980264A (en) | Photoresist compositions of controlled dissolution rate in alkaline developers | |
EP0697632A2 (fr) | Composition photosensible à amplification chimique | |
US5234791A (en) | Radiation-curable composition and radiation-sensitive recording material prepared therefrom for use with high-energy radiation | |
US4912018A (en) | High resolution photoresist based on imide containing polymers | |
JPH054662B2 (fr) | ||
JP3495503B2 (ja) | 架橋されたポリマー | |
EP0410794A2 (fr) | Photoréserve de type négatif sensible dans l'UV lointain, contenant des groupes maléimides | |
JP3506817B2 (ja) | 放射線感応性組成物 | |
KR19990076735A (ko) | 레지스트 조성물 | |
EP0520654A1 (fr) | Compositions photosensibles aux UV lointains formant réserve positive | |
JP2935306B2 (ja) | 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物 | |
KR19990045397A (ko) | 레지스트 패턴 형성법 및 이 방법에 사용되는포지티브 레지스트 조성물 | |
EP0361906A2 (fr) | Méthode pour l'obtention d'une image négative inversée dans un système photoréserve contenant une imide bloquée photodissociable | |
EP0614120B1 (fr) | Source pour une acide généré par voie photochimique pour photoréserves microélectroniques | |
US5462840A (en) | Use of poly(35-disubstituted 4-hydroxystyrene/N-substituted maleimide for forming a negative image | |
US5221592A (en) | Diazo ester of a benzolactone ring compound and positive photoresist composition and element utilizing the diazo ester | |
JPH05155942A (ja) | ナフトキノン−2−ジアジド−4−スルホニル基を含有する感放射線重合体およびポジ型記録材料における用途 | |
EP0788620B1 (fr) | Composition photosensible positive | |
JP3180339B2 (ja) | 感放射線性樹脂組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB IT NL |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB IT NL |
|
17P | Request for examination filed |
Effective date: 19920310 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Withdrawal date: 19940502 |