EP0405304A2 - Thin film resistors whose surface resistance values are comprised between 1M-ohms and several G-ohms and process of making it - Google Patents

Thin film resistors whose surface resistance values are comprised between 1M-ohms and several G-ohms and process of making it Download PDF

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Publication number
EP0405304A2
EP0405304A2 EP90111587A EP90111587A EP0405304A2 EP 0405304 A2 EP0405304 A2 EP 0405304A2 EP 90111587 A EP90111587 A EP 90111587A EP 90111587 A EP90111587 A EP 90111587A EP 0405304 A2 EP0405304 A2 EP 0405304A2
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Prior art keywords
indium
film resistors
ohms
mbar
thin film
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EP90111587A
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German (de)
French (fr)
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EP0405304A3 (en
Inventor
Martin Dr. Hoheisel
Christine Mrotzek
Werner Müller
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Siemens AG
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Siemens AG
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Publication of EP0405304A3 publication Critical patent/EP0405304A3/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/08—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Definitions

  • the invention relates to thin film resistors with sheet resistance values in the range between 1 M-ohm (Megaohm) and several G-ohms (Gigaohm), processes for their manufacture, and the use of the process for the manufacture of such thin film resistors in integrated circuits.
  • resistors are also required for applications in large-area microelectronics.
  • the working resistances of amplifiers or logic circuits must be of the order of magnitude of the ON resistance of the transistors used.
  • Feedback resistors often have to be significantly larger.
  • TFTs made of amorphous silicon, very high resistance values result.
  • the object of the invention is to provide a material from which thin-film resistors between 1 M-ohm and several G-ohms can be produced.
  • the invention relates to a material for thin-film resistors with surface resistance values between the 1 M-ohm range up to the G-ohm range, which is characterized in that it consists of a transparent, conductive oxide and by sputtering or vapor deposition in an atmosphere an increased partial pressure of oxygen is produced. It is within the scope of the invention that this material consists of indium tin oxide.
  • indium tin oxide layers are used as a transparent, conductive material for electrodes for photodiodes in image sensor lines based on amorphous silicon.
  • the manufacturing conditions are optimized so that the layers have a high degree of transparency and the best possible electrical conductivity.
  • Typical sheet resistances of 100 nm thick ITO layers are around 200 ohms per square (corresponds to a specific electrical resistance of 20 x 10 ⁇ 4 ohm cm); the transparency for visible light is 90 percent.
  • ITO layers are produced by reactive sputtering or reactive electron beam evaporation. A metallic or oxidic material is assumed and the oxygen content of the deposited layer is adjusted by the partial pressure of oxygen during production.
  • the layers become more transparent, but they have a higher resistance. This effect takes advantage of the present invention.
  • the oxygen partial pressure in the recipient is reduced by temporarily switching off the oxygen supply.
  • ITO material
  • DC direct current
  • An ITO layer with a sheet resistance of 200 M-ohms is produced.
  • a metallic target consisting of 90 percent by weight indium and 10 percent by weight tin is used and the layer is sputtered in the DC sputtering system (BAK 600 from Balzers) with a gas mixture of 3 x 10 m3 mbar argon and 5 x 10 ⁇ 3 mbar oxygen.
  • the substrate is kept at room temperature; the sputtering power is 800 W.
  • the layer thickness is 95 nm and the sheet resistance is 200 M-ohms.
  • Another ITO layer with a sheet resistance of 1.5 G-Ohm is produced by changing the parameters for the first embodiment by setting the oxygen partial pressure to 2.6 x 10 ⁇ 3 mbar and the sputtering power to 750 W. After 8 minutes of sputtering, the layer thickness is 35 nm and the sheet resistance is 1.5 G-ohms.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

Thin film resistors consisting of a transparent conductive oxide, in particular of indium tin oxide (= ITO) have sheet resistance values between 1 Mohm and several Gohm if they are prepared by sputtering or vapour deposition in an atmosphere having an enhanced oxygen partial pressure. It is possible to produce thin film resistors composed of ITO layers in the range from 8 Mohm to 40 Gohm which are used for integrated circuits in large-area electronics.

Description

Die Erfindung betrifft Dünnschichtwiderstände mit Flächenwider­standwerten im Bereich zwischen 1 M-Ohm (Megaohm) und mehreren G-Ohm (Gigaohm), Verfahren zu ihrer Herstellung, sowie die Ver­wendung der verfahren zur Herstellung von solchen Dünnfilmwi­derständen in integrierten Schaltungen.The invention relates to thin film resistors with sheet resistance values in the range between 1 M-ohm (Megaohm) and several G-ohms (Gigaohm), processes for their manufacture, and the use of the process for the manufacture of such thin film resistors in integrated circuits.

Für Anwendungen in der Großflächenelektronik (Large-Area-­Microelectronics) werden neben aktiven Bauelementen, wie Dioden und Transistoren auch Widerstände benötigt. Dabei müssen Ar­beitswiderstände von Verstärkern oder Logikschaltungen in der Größenordnung des ON-Widerstandes der verwendeten Transistoren liegen. Rückkoppelwiderstände müssen oft noch wesentlich größer sein. Bei Dünnfilm-Transistoren, sogenannten TFTs, aus amor­phem Silizium ergeben sich dabei sehr hohe Widerstandswerte.In addition to active components such as diodes and transistors, resistors are also required for applications in large-area microelectronics. The working resistances of amplifiers or logic circuits must be of the order of magnitude of the ON resistance of the transistors used. Feedback resistors often have to be significantly larger. In the case of thin-film transistors, so-called TFTs, made of amorphous silicon, very high resistance values result.

Aufgabe der Erfindung ist es, ein Material anzugeben, aus dem sich Dünnschichtwiderstände zwischen 1 M-Ohm und mehreren G-Ohm herstellen lassen.The object of the invention is to provide a material from which thin-film resistors between 1 M-ohm and several G-ohms can be produced.

Aus einem Bericht von H. Steemers und R. Weisfield aus Mat. Res. Soc. Symp. Proc. Vol. 118 (1988), Seiten 445 bis 449 ist bekannt, Widerstände aus amorphem Silizium (a-Si:H) herzustel­len. Verwendet man hochdotiertes a-Si:H, errreicht man nur Flächenwiderstandswerte um 10 k-Ohm bei Temperaturkoeffizien­ten von 2,5 Prozent/°C. Undotiertes a-Si:H erreicht zwar Flä­chenwiderstände von bis zu 10¹⁵ Ohm, allerdings bei Tempera­turkoeffizienten von 12 Prozent/°C. Dies ist für praktische Anwendungen unbrauchbar.From a report by H. Steemers and R. Weisfield from Mat. Res. Soc. Symp. Proc. Vol. 118 (1988), pages 445 to 449, it is known to produce resistors from amorphous silicon (a-Si: H). If heavily doped a-Si: H is used, only surface resistance values of around 10 k-ohms can be achieved with a temperature coefficient of 2.5 percent / ° C. Undoped a-Si: H achieves sheet resistances of up to 10¹⁵ ohms, but with a temperature coefficient of 12 percent / ° C. This is unusable for practical applications.

Aus einem Bericht von S. M. Ojha aus Thin Solid Films 57 (1979), Seiten 363 bis 366 ist bekannt, Widerstände aus Cermet zu ver­wenden. Es handelt sich dabei um gemeinsam aufgesputterte Schichten aus SiO₂ und einem Metall. Diese Cermet-Widerstände lassen sich allerdings nur mit Hilfe einer Hochfrequenz-Sput­teranlage herstellen, da die Targets zu hochohmig sind. Da eine Änderung der Targetzusammensetzung von 20 Prozent zu einer Änderung des Flächenwiderstands um mehrere Zehner-Po­tenzen führt, sind solche Widerstände schlecht reproduzier­bar herzustellen.From a report by SM Ojha from Thin Solid Films 57 (1979), Pages 363 to 366 are known to use cermet resistors. These are jointly sputtered layers of SiO₂ and a metal. However, these cermet resistors can only be produced with the aid of a high-frequency sputtering system, since the targets are too high-resistance. Since a change in the target composition of 20 percent leads to a change in the sheet resistance by several powers of ten, such resistors are difficult to reproduce.

Gegenstand der Erfindung ist ein Material für Dünnschichtwider­stände mit Flächenwiderstandswerten zwischen dem 1 M-Ohm-Be­reich bis in den G-Ohm-Bereich, welches dadurch gekennzeichnet ist, daß es aus einem transparenten, leitfähigen Oxid besteht und durch Sputtern oder Aufdampfen in einer Atmosphäre mit einem erhöhten Sauerstoffpartialdruck hergestellt ist. Es liegt im Rahmen der Erfindung, daß dieses Material aus Indium-­Zinn-Oxid besteht.The invention relates to a material for thin-film resistors with surface resistance values between the 1 M-ohm range up to the G-ohm range, which is characterized in that it consists of a transparent, conductive oxide and by sputtering or vapor deposition in an atmosphere an increased partial pressure of oxygen is produced. It is within the scope of the invention that this material consists of indium tin oxide.

Wie aus der europäischen Patentanmeldung 0 293 645 bekannt ist, werden Indium-Zinn-Oxid-Schichten als transparentes, leitfähi­ges Material für Elektroden für Photodioden in Bildsensorzei­len auf der Basis von amorphem Silizium verwendet. Dabei wer­den die Herstellbedingungen so optimiert, daß die Schichten eine hohe Transparenz und eine möglichst gute elektrisch Leit­fähigkeit aufweisen. Typische Flächenwiderstände von 100 nm dicken ITO-Schichten liegen um 200 Ohm pro square (entspricht einem spezifischen elektrischen Widerstand von 20 x 10⁻⁴ Ohm cm); die Transparenz für sichtbares Licht beträgt 90 Prozent. Die Herstellung von ITO-Schichten erfolgt durch reaktives Sputtern oder reaktives Elektronenstrahlverdampfen. Dabei wird von einem metallischen oder oxidischen Material ausgegangen und der Sauerstoffgehalt der abgeschiedenen Schicht durch den Sauerstoffpartialdruck während der Herstellung eingestellt. Erhöht man den Sauerstoff-Partialdruck, werden die Schichten zwar transparenter, jedoch hochohmiger. Dieser Effekt nutzt die vorliegende Erfindung aus. Bei dem in der europäischen Patentanmeldung beschriebenen Verfahren wird dagegen, um den Flächenwiderstand niedrig zu halten, während der Beschichtung der Sauerstoffpartialdruck im Rezipienten durch vorübergehen­des Abschalten der Sauerstoffzufuhr reduziert.As is known from European patent application 0 293 645, indium tin oxide layers are used as a transparent, conductive material for electrodes for photodiodes in image sensor lines based on amorphous silicon. The manufacturing conditions are optimized so that the layers have a high degree of transparency and the best possible electrical conductivity. Typical sheet resistances of 100 nm thick ITO layers are around 200 ohms per square (corresponds to a specific electrical resistance of 20 x 10⁻⁴ ohm cm); the transparency for visible light is 90 percent. ITO layers are produced by reactive sputtering or reactive electron beam evaporation. A metallic or oxidic material is assumed and the oxygen content of the deposited layer is adjusted by the partial pressure of oxygen during production. If the oxygen partial pressure is increased, the layers become more transparent, but they have a higher resistance. This effect takes advantage of the present invention. In the method described in the European patent application, however, in order to keep the sheet resistance low, during the coating the oxygen partial pressure in the recipient is reduced by temporarily switching off the oxygen supply.

Die Erfindung nutzt auch diese Möglichtkeit aus und stellt mit dem gleichen Material (ITO) und in der gleichen DC (= Gleich­strom)-Sputteranlage mit dem gleichen Target sowohl Elektroden für Photodioden als auch Widerstände in einer intergrierten Schaltung her; nur der Sauerstoffpartialdruck muß erhöht bzw. erniedrigt werden, was aber leicht durchführbar ist.The invention also makes use of this possibility and uses the same material (ITO) and in the same DC (= direct current) sputtering system with the same target to produce both electrodes for photodiodes and resistors in an integrated circuit; only the oxygen partial pressure has to be increased or decreased, but this is easy to carry out.

Weitere Ausgestaltungen der Erfindung, insbesondere Verfahren zu ihrer Realisierung, ergeben sich aus den Unteransprüchen.Further refinements of the invention, in particular methods for their implementation, result from the subclaims.

Die Erfindung wird im folgenden anhand von zwei Ausführungs­beispielen noch näher erläutert.The invention is explained in more detail below with reference to two exemplary embodiments.

1. Ausführungsbeispiel:1st embodiment:

Hergestellt wird eine ITO-Schicht mit einem Flächenwiderstand von 200 M-Ohm. Dabei wird ein metallisches Target bestehend aus 90 Gewichtprozent Indium und 10 Gewichtprozent Zinn ver­wendet und die Schicht in der DC-Sputteranlage (BAK 600 von Balzers) mit einem Gasgemisch aus 3 x 10⁻³ mbar Argon und 5 x 10⁻³ mbar Sauerstoff aufgesputtert. Das Substrat wird da­bei auf Raumtemperatur gehalten; die Sputterleistung beträgt 800 W. Nach 49 Minuten Sputterzeit beträgt die Schichtdicke 95 nm und der Flächenwiderstand 200 M-Ohm.An ITO layer with a sheet resistance of 200 M-ohms is produced. A metallic target consisting of 90 percent by weight indium and 10 percent by weight tin is used and the layer is sputtered in the DC sputtering system (BAK 600 from Balzers) with a gas mixture of 3 x 10 m³ mbar argon and 5 x 10⁻³ mbar oxygen. The substrate is kept at room temperature; the sputtering power is 800 W. After 49 minutes of sputtering, the layer thickness is 95 nm and the sheet resistance is 200 M-ohms.

2. Ausführungsbeispiel:2nd embodiment:

Eine weitere ITO-Schicht mit einem Flächenwiderstand von 1,5 G-Ohm wird in Abänderung der Parameter zum 1. Ausführungsbei­spiel dadurch hergestellt, daß der Sauerstoffpartialdruck auf 2.6 x 10⁻³ mbar und die Sputterleistung auf 750 W eingestellt wird. Nach 8 Minuten Sputterzeit beträgt die Schichtdicke 35 nm und der Flächenwiderstand 1.5 G-Ohm.Another ITO layer with a sheet resistance of 1.5 G-Ohm is produced by changing the parameters for the first embodiment by setting the oxygen partial pressure to 2.6 x 10⁻³ mbar and the sputtering power to 750 W. After 8 minutes of sputtering, the layer thickness is 35 nm and the sheet resistance is 1.5 G-ohms.

Da es möglich ist, Dünnfilmwiderstände mit Geometrieverhält­nissen (Länge/Breite) von 1/25 bis 25/1 herzustellen, ist es auch möglich, mit erfindungsgemäßen ITO-Schichten Widerstände zwischen 8 M-Ohm und 40 G-Ohm zu realisieren. Durch Erhöhung des Partialdruckes dürften auch noch größere Widerstandswer­te zu erreichen sein.Since it is possible to manufacture thin film resistors with geometrical ratios (length / width) from 1/25 to 25/1, it is it is also possible to implement resistances between 8 M-ohms and 40 G-ohms with ITO layers according to the invention. Increasing the partial pressure should also make it possible to achieve even greater resistance values.

Claims (7)

1. Dünnschichtwiderstände mit Flächenwiderständen im Bereich zwischen 1 M-Ohm und mehreren G-Ohm, bestehend aus einem trans­parenten, leitfähigen Oxid, hergestellt durch Sputtern oder Aufdampfen in einer Atmosphäre mit einem erhöhten Sauerstoff­partialdruck.1. Thin-film resistors with surface resistances in the range between 1 M-ohm and several G-ohms, consisting of a transparent, conductive oxide, produced by sputtering or vapor deposition in an atmosphere with an increased oxygen partial pressure. 2. Dünnschichtwiderstände nach Anspruch 1, bestehend aus In­dium-Zinn-Oxid (ITO).2. Thin-film resistors according to claim 1, consisting of indium tin oxide (ITO). 3. Verfahren zum Herstellen von Dünnschichtwiderständen aus Indium-Zinn-Oxid (ITO) nach Anspruch 2, dadurch ge­kennzeichnet, daß das Indium-Zinn-Oxid durch Sputtern mit einem metallischen Indium-Zinn-Target in einem Edelgas-Sauerstoff-Gasgemisch hergestellt wird.3. A method for producing thin film resistors from indium tin oxide (ITO) according to claim 2, characterized in that the indium tin oxide is produced by sputtering with a metallic indium tin target in a noble gas-oxygen gas mixture. 4. Verfahren zum Herstellen von Dünnschichtwiderständen aus Indium-Zinn-Oxid (ITO) auf integrierte Halbleiterschaltungen enthaltenden Substraten nach Anspruch 3, dadurch gekennzeichnet, daß a) ein Target aus einer Indium/Zinn-Legierung mit 98 bis 90 Gewichtsprozent Indium und 2 bis 10 Gewichtsprozent Zinn verwendet wird, b) die Beschichtung in einer DC-Magnetron-Sputteranlage vorge­nommen wird, c) ein Gasgemisch aus 2 x 10⁻³ mbar bis 1 x 10⁻¹ mbar Argon und 2 x 10⁻³ mbar bis 2 x 10⁻² mbar Sauerstoff verwendet wird, d) die Substrate auf einer Temperatur zwischen Raumtemperatur und 80°C gehalten werden, und e) die Sputterleistung im Bereich von 600 bis 3000 Watt einge­stellt wird. 4. A method for producing thin film resistors made of indium tin oxide (ITO) on substrates containing integrated semiconductor circuits according to claim 3, characterized in that a) an indium / tin alloy target with 98 to 90 percent by weight indium and 2 to 10 percent by weight tin is used, b) the coating is carried out in a DC magnetron sputtering system, c) a gas mixture of 2 x 10⁻³ mbar to 1 x 10⁻¹ mbar argon and 2 x 10⁻³ mbar to 2 x 10⁻² mbar oxygen is used, d) the substrates are kept at a temperature between room temperature and 80 ° C, and e) the sputtering power is set in the range from 600 to 3000 watts. 5. Verfahren zum Herstellen von Dünnschichtwiderständen aus Indium-Zinn-Oxid mit einem Flächenwiderstand von 200 M-Ohm bei einer Schichtdicke von 95 nm nach Anspruch 4, da­durch gekennzeichnet, daß a) ein Target aus einer Indium/Zinn-Legierung mit 90 Gewichts­prozent Indium und 10 Gewichtsprozent Zinn verwendet wird, b) die Beschichtung in einer DC-Magnetron-Sputteranlage vor­genommen wird, c) ein Gasgemisch aus 3 x 10⁻³ mbar Argon und 5 x 10⁻³ mbar Sauerstoff verwendet wird, d) die Substrate auf Raumtemperatur gehalten werden und e) die Sputterleistung im Bereich von 750 bis 850 Watt einge­stellt wird. 5. A method for producing thin film resistors made of indium tin oxide with a sheet resistance of 200 M-ohms at a layer thickness of 95 nm according to claim 4, characterized in that a) an indium / tin alloy target with 90 percent by weight indium and 10 percent by weight tin is used, b) the coating is carried out in a DC magnetron sputtering system, c) a gas mixture of 3 x 10⁻³ mbar argon and 5 x 10⁻³ mbar oxygen is used, d) the substrates are kept at room temperature and e) the sputtering power is set in the range from 750 to 850 watts. 6. Verfahren zum Herstellen von Dünnschichtwiderständen aus Indium-Zinn-Oxid mit einem Flächenwiderstand von 1,5 G-Ohm bei einer Schichtdicke von 35 nm nach Anspruch 4, da­durch gekennzeichnet, daß a) ein Target aus einer Indium/Zinn-Legierung mit 90 Gewichts­prozent Indium und 10 Gewichtsprozent Zinn verwendet wird, b) die Beschichtung in einer DC-Magnetron-Sputteranlage vor­genommen wird, c) ein Gasgemisch aus 3 x 10⁻³ mbar Argon und 2,6 x 10⁻³ mbar Sauerstoff verwendet wird, d) die Substrate auf Raumtemperatur gehalten werden und e) die Sputterleistung im Bereich von 750 W eingestellt wird. 6. A method for producing thin film resistors made of indium tin oxide with a sheet resistance of 1.5 G-ohms at a layer thickness of 35 nm according to claim 4, characterized in that a) an indium / tin alloy target with 90 percent by weight indium and 10 percent by weight tin is used, b) the coating is carried out in a DC magnetron sputtering system, c) a gas mixture of 3 x 10⁻³ mbar argon and 2.6 x 10⁻³ mbar oxygen is used, d) the substrates are kept at room temperature and e) the sputtering power is set in the range of 750 W. 7. Verwendung der Verfahren nach einem der Ansprüche 3 bis 6 zur Herstellung von Dünnfilmwiderständen in integrierten Schaltungen mit transparenten Indium-Zinn-Oxid-Elektroden auf­weisenden Photodioden.7. Use of the method according to one of claims 3 to 6 for the production of thin-film resistors in integrated Circuits with transparent indium tin oxide electrodes having photodiodes.
EP19900111587 1989-06-29 1990-06-19 Thin film resistors whose surface resistance values are comprised between 1m-ohms and several g-ohms and process of making it Withdrawn EP0405304A3 (en)

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DE3921431 1989-06-29
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0781076A3 (en) * 1995-12-20 1997-10-15 Mitsui Toatsu Chemicals Transparent conductive laminate and electroluminescence element
EP1184481A2 (en) * 2000-08-28 2002-03-06 Centro De Investigaciones Energeticas Medioambientales Y Tecnologicas (C.I.E.M.A.T.) Method for obtaining transparent, electrically conducting oxides by means of sputtering
EP0894331B1 (en) * 1997-01-17 2003-09-03 Koninklijke Philips Electronics N.V. Method of manufacturing a cathode ray tube

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2261601A1 (en) * 1974-02-15 1975-09-12 Thomson Csf Method of forming conductive layers - uses varying pressures of oxygen during ion bombardment of target

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2261601A1 (en) * 1974-02-15 1975-09-12 Thomson Csf Method of forming conductive layers - uses varying pressures of oxygen during ion bombardment of target

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
THIN SOLID FILMS. Bd. 128, Nr. 3/4, Juni 1985, LAUSANNE CH Seiten 231 - 239; BHATTACHARYYA ET AL.: 'Preparation and characterization of indium tin oxide films produced by the D.C sputtering technique' *
THIN SOLID FILMS. Bd. 162, Nr. 1, August 1988, LAUSANNE CH Seiten 119 - 127; DUTTA ET AL.: 'Variations in structural and electrical properties of magnetron-sputtered indium tin oxide films with deposition parameters' *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0781076A3 (en) * 1995-12-20 1997-10-15 Mitsui Toatsu Chemicals Transparent conductive laminate and electroluminescence element
EP0894331B1 (en) * 1997-01-17 2003-09-03 Koninklijke Philips Electronics N.V. Method of manufacturing a cathode ray tube
EP1184481A2 (en) * 2000-08-28 2002-03-06 Centro De Investigaciones Energeticas Medioambientales Y Tecnologicas (C.I.E.M.A.T.) Method for obtaining transparent, electrically conducting oxides by means of sputtering
EP1184481A3 (en) * 2000-08-28 2003-12-03 Centro De Investigaciones Energeticas Medioambientales Y Tecnologicas (C.I.E.M.A.T.) Method for obtaining transparent, electrically conducting oxides by means of sputtering

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EP0405304A3 (en) 1992-06-03

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