EP0362057B1 - Vorrichtung zur Erzeugung eines Infrarotbildes - Google Patents
Vorrichtung zur Erzeugung eines Infrarotbildes Download PDFInfo
- Publication number
- EP0362057B1 EP0362057B1 EP89402650A EP89402650A EP0362057B1 EP 0362057 B1 EP0362057 B1 EP 0362057B1 EP 89402650 A EP89402650 A EP 89402650A EP 89402650 A EP89402650 A EP 89402650A EP 0362057 B1 EP0362057 B1 EP 0362057B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- screen
- layer
- infrared
- pixels
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 19
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 5
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical compound [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 claims description 2
- 229910017000 As2Se3 Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052958 orpiment Inorganic materials 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 229940052288 arsenic trisulfide Drugs 0.000 claims 1
- 150000004770 chalcogenides Chemical class 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 239000002470 thermal conductor Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 239000005387 chalcogenide glass Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010013642 Drooling Diseases 0.000 description 1
- 208000008630 Sialorrhea Diseases 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F41—WEAPONS
- F41J—TARGETS; TARGET RANGES; BULLET CATCHERS
- F41J2/00—Reflecting targets, e.g. radar-reflector targets; Active targets transmitting electromagnetic or acoustic waves
- F41J2/02—Active targets transmitting infrared radiation
Definitions
- the subject of the present invention is a device for generating an infrared image, comprising a transparent screen in the infrared and supporting a plurality of pixels of material with high emissivity in the infrared, and means for selectively heating the material of each of said pixels.
- Such a device is used to test infrared imaging devices, such as for example missile seeker, by reproducing infrared images in the laboratory as close as possible to those which will be encountered in reality.
- the selective heating means comprise an electron beam or a laser beam, of small diameter compared to the dimensions of a pixel, which bombards a portion, in the form of a median strip, of a thin layer of material which is a good thermal conductor, a layer which extends over an area equal to that of a pixel.
- This layer has the function, on the one hand, of converting the energy of the beam into heat and, on the other hand, of diffusing the heat arising on the strip-shaped portion to the entire surface of the layer. and parallel to this layer.
- Two blocks of thermal insulating material placed in contact with the previous layer and on each side of the path of the electron beam before its impact, slowly diffuse the heat of the layer, perpendicularly, this time to this layer, and in the opposite direction. displacement of the electrons, towards two layers of material with high emissivity in the infrared, here two layers of black body, whose function is to convert heat into infrared radiation, these two layers of black body constituting the pixel proper.
- the preceding blocks such as the layer for converting the energy of the beam into heat, arranged between the two layers of black body and the screen, are transparent to infrared.
- the screen structure of such a device is relatively complex and therefore of a high production cost. Furthermore, the performance of such a device is limited due to the use of a low power beam, this being imposed by its necessarily restricted diameter.
- the present invention aims to overcome these drawbacks.
- a device for generating an infrared image comprising a screen supporting a plurality of pixels of material with high emissivity in the infrared, and means for selectively heating the material of each of said pixels by direct bombardment by means of an electron beam, characterized in that said electron beam is of section at least substantially equal to the surface of a pixel and said screen is transparent in the infrared.
- the material with high emissivity ensures, in addition to the conversion of heat into infrared radiation, which it already ensures in the known device, the conversion of the energy of the beam into heat, which was provided, in the known device, by the layer of material which is a good conductor of heat.
- This result is made possible in particular because the cross section of the beam is at least equal to the surface of the pixel, which means that the conversion of the energy of the beam into heat occurs over the entire surface of the pixel, instead of occurring over a limited portion of this area. Consequently, it is no longer necessary to diffuse the heat, parallel to the surface of the screen, so that it occupies the entire surface of the pixel.
- the black body performs the function of conversion of beam energy into heat, which results in an extremely simple structure.
- the diameter of the beam is significantly larger than in the known device, due to the increase in the current generating this beam. Therefore, the increase in the power transported by the beam, for heating the black body to higher temperatures than those of the known device, does not pose any particular problems.
- the device of the invention makes it possible to produce infrared images whose maximum intensity is notably greater than that of the known device.
- Patent US-A-4 687 967 teaches a device according to the preamble of claim 1 and which comprises islands of material with emissivity in the infrared against a conductive substrate constituting the screen of the device. But this screen is viewed from the rear through a window (5).
- the metal layer 36 (50) of US-A-4,572,958 is transparent, but this layer and layer 3 of US-A-4,687,967 do not perform the same function at all. There is therefore no reason, in view of US-A-4,572,958, to make the metallic layer of US-A-4,687,967, not comparable to the first, transparent.
- a crosslinked layer of transparent material in infrared and thermal insulator is disposed between said screen and said pixels.
- said screen is a thermal conductor, and means are provided for cooling said screen, in order to dissipate calories at a temperature close to ambient temperature.
- the image obtained remains well contrasted, and if it is animated, its drag is reduced.
- a layer, anti-reflection in the wavelength range of use of the infrared image is deposited on said screen.
- This device comprises a cathode ray tube 1, of known type, provided with a screen 2, arranged to transform into infrared radiation the energy of the electron beam 11 of the tube 1.
- an animated infrared image is obtained in order to test infrared imaging systems, for example.
- the screen 2 here mainly comprises a plate 21 of transparent material in the infrared and thermal conductor.
- the material of the plate 21 is for example silicon for the range of wavelengths between 3 and 5 microns, or germanium, for the wavelength range between 8 and 12 microns.
- the thickness of the plate 21 is here from 5 to 10 mm.
- the material of layer 22 is arsenic trisulphide As2S3, or arsenic triselenide As2Se3, or chalcogenide glass Ge33As12Se55 or silver chloride AgCl.
- the choice of one of these materials is linked to the temperature likely to be reached by layer 22.
- the trisulphide and arsenic triselenide can be used up to 150 ° C, the chalcogenide glass up to 300 ° C, and silver chloride glass up to 900 ° C. However, these last two compounds have a higher thermal conductivity.
- the layer 22 are practiced two series of grooves 23 within 20 microns wide and 200 microns deep, the grooves 23 of one series being all parallel to each other and perpendicular to the grooves 23 of the other series.
- the grooves 23 of a series repeat with a step of 250 microns.
- the layer 22 is thus crosslinked and therefore comprises a plurality of elementary blocks 24 of 200 x 250 x 250 microns.
- the layer 22 is deposited, in a known manner, by evaporation, by pouring of glass or by bonding, and the grooves 23 are engraved mechanically, for example with diamond, or else by photolithography, or even by laser machining.
- Random crosslinking can be obtained by exploiting the differences in thermal expansion between the screen and the insulating layer. If the latter is higher, during cooling it will contract more, and if its modulus of rupture is weaker than its adhesion on the screen, it will fragment into scales constituting the crosslinking which will thus be obtained naturally, the average dimension of the scales being a complex function of the thickness and of the modulus of rupture of the layer.
- each block 24 is deposited, by high temperature evaporation, a layer 25 of a material with high emissivity in the infrared, here a black body, in this case of chromium oxide.
- the thickness of layer 25 is of the order of a micron.
- each portion of layer 25 is a pixel of the infrared image appearing on screen 2.
- the periphery of the plate 21 is integral with a cooling device, for example a ring 3 with water circulation.
- the cathode ray tube 1 is, for example, and screen aside, of the type marketed by the company RTC under the reference 221 P 14. This tube is intended to scan a screen of 100 x 75 mm, with a section of the beam 11 d '' about 250 microns in diameter, capable of carrying a current of 2 mA at a voltage of 30 kV.
- the power of the electron beam 11 is thus 60 W.
- the device which has just been described operates as follows.
- the electron beam 11 scans the rear face of the plate 21 as it would in a conventional tube. he bombards successively, and directly the chromium oxide, or black body, of each layer, or pixel, 25.
- the section of the beam 11 is here substantially equal to the total surface of the layer 25, and the latter acts both to convert the energy provided by the beam 11 into heat and to convert this heat into infrared radiation.
- the layer 25 is therefore heated directly by the bundle 11.
- the layer 25 emits infrared radiation linked to the power of the beam at the time when it bombarded it with a duration of afterglow greater than the duration of renewal, in order to limit the "flickering" of the image.
- this specification of remanence may disappear if the device is intended to test systems exploiting mosaics of detectors. Only the synchronization of lines or images is to be ensured.
- the infrared radiation emitted by the layer 25 passes through the block 24, the plate 21, and the layer 26.
- this layer 25 is indeed a pixel of the infrared image obtained since it is this which is at the origin of the radiation observed.
- the part of the radiation whose wavelength is in the range where the anti-reflection layer 26 is effective passes through this layer 26.
- the remaining part of the radiation, which does not pass through the layer 26, is reflected towards the layer 25 of black body, in which it is again converted into heat, which further increases the efficiency of the assembly.
- the plate 21 is good thermally conductive, and it is cooled by the cooling ring 3 so to permanently evacuate the heat from the blocks 24. This prevents a gradual rise in temperature of the plate 21 which would otherwise reduce the contrast of the image and introduce dragging of the moving images.
- One of the advantages of the invention in addition to its particularly simple structure, is the high temperature which each of the chromium oxide layers is capable of reaching.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- General Engineering & Computer Science (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Radiation Pyrometers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Claims (5)
- Vorrichtung zur Erzeugung eines Infrarotbildes, umfassend einen Bildschirm (21), der eine Vielzahl von Pixeln (25) aus einem Material mit einem starken Emisissionsvermögen im Infrarotbereich trägt, sowie Mittel (11), um das Material jedes der Pixel in selektiver Weise durch den direkten Beschuß mit einem Elektronenstrahl zu erwärmen, dadurch gekennzeichnet, daß der Elektronenstrahl einen Querschnitt aufweist, der mindestens im wesentlichen der Oberfläche eines Pixels (25) entspricht, und der Bildschirm (21) im Infrarotbereich durchlässig ist.
- Vorrichtung nach Anspruch 1, bei der eine netzförmige Schicht (22) aus einem im Infrarotbereich durchlässigen und wärmeisolierenden Material zwischen dem Bildschirm (21) und den Pixeln (25) angeordnet ist.
- Vorrichtung nach Anspruch 2, bei der das Material der netzförmigen Schicht (22) unter den folgenden Materialien gewählt wird: Arsentrisulfid As₂S₃, Arsentriselenid As₂Se₃, Chalkogenidglas Ge₃₃As₁₂Se₅₅ und Silberchlorid AgCl.
- Vorrichtung nach einem der Ansprüche 1 bis 3, bei der der Bildschirm (21) ein Wärmeleiter ist und Mittel (3) zur Kühlung dieses Bildschirms (21) vorgesehen sind.
- Vorrichtung nach einem der Ansprüche 1 bis 4, bei der eine Schicht (26), die in dem Wellenlängenbereich, in dem das Infrarotbild verwendet wird, entspiegelt ist, auf dem Bildschirm (2) aufgebracht ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8812790 | 1988-09-30 | ||
FR8812790A FR2637415B1 (fr) | 1988-09-30 | 1988-09-30 | Dispositif pour engendrer une image infrarouge |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0362057A1 EP0362057A1 (de) | 1990-04-04 |
EP0362057B1 true EP0362057B1 (de) | 1994-05-04 |
Family
ID=9370558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP89402650A Expired - Lifetime EP0362057B1 (de) | 1988-09-30 | 1989-09-27 | Vorrichtung zur Erzeugung eines Infrarotbildes |
Country Status (7)
Country | Link |
---|---|
US (1) | US4999502A (de) |
EP (1) | EP0362057B1 (de) |
JP (1) | JPH02123648A (de) |
CA (1) | CA1317628C (de) |
DE (1) | DE68915098T2 (de) |
FR (1) | FR2637415B1 (de) |
IL (1) | IL91786A (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5079431A (en) * | 1990-10-22 | 1992-01-07 | The United States Of America As Represented By The Secretary Of The Army | Electron beam scenario simulator and method of testing a sensor |
US5175432A (en) * | 1990-10-31 | 1992-12-29 | Gruman Aerospace Corporation | Infrared detector module test system |
MY110574A (en) * | 1991-11-20 | 1998-08-29 | Samsung Electron Devices Co Ltd | Far-infrared emitting cathode ray tube |
JPH0813114B2 (ja) * | 1992-06-09 | 1996-02-07 | 三星電管株式會社 | 遠赤外線放射映像表示装置 |
US5336888A (en) * | 1992-07-30 | 1994-08-09 | Aerojet-General Corporation | High resolution infrared scene simulator |
US5617318A (en) * | 1995-05-08 | 1997-04-01 | Northrop Grumman Corporation | Dynamically reconfigurable data processing system |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1375780A (de) * | 1972-07-12 | 1974-11-27 | ||
DE2537599C3 (de) * | 1974-09-02 | 1980-05-08 | N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) | Verfahren zur Herstellung einer Signalspeicherplatte |
US4058734A (en) * | 1976-07-19 | 1977-11-15 | The United States Of America As Represented By The Secretary Of The Air Force | Passive infrared resolution target |
US4178514A (en) * | 1978-04-26 | 1979-12-11 | The United States Of America As Represented By The Secretary Of The Army | System for generating a dynamic far infrared image |
US4317063A (en) * | 1978-10-28 | 1982-02-23 | Plessey Handel Und Investments Ag | Pyroelectric detectors |
DE3116735A1 (de) * | 1981-04-28 | 1982-12-02 | Manfred Dr. 8011 Poing Janes | Integrierter infrarot-flaechenstrahler mit thermisch stabilem ir-bild |
DE3324633A1 (de) * | 1983-07-08 | 1985-01-17 | Honeywell Gmbh, 6050 Offenbach | Infrarot-simulator |
US4572958A (en) * | 1984-08-31 | 1986-02-25 | Honeywell Inc. | Infrared imager |
FR2577073B1 (fr) * | 1985-02-06 | 1987-09-25 | Commissariat Energie Atomique | Dispositif matriciel de detection d'un rayonnement lumineux a ecrans froids individuels integres dans un substrat et son procede de fabrication |
US4687967A (en) * | 1985-05-03 | 1987-08-18 | The United States Of America As Represented By The Secretary Of The Army | Infrared image cathode ray tube |
-
1988
- 1988-09-30 FR FR8812790A patent/FR2637415B1/fr not_active Expired - Fee Related
-
1989
- 1989-09-26 IL IL91786A patent/IL91786A/xx unknown
- 1989-09-27 DE DE68915098T patent/DE68915098T2/de not_active Expired - Fee Related
- 1989-09-27 EP EP89402650A patent/EP0362057B1/de not_active Expired - Lifetime
- 1989-09-28 US US07/414,489 patent/US4999502A/en not_active Expired - Fee Related
- 1989-09-28 JP JP1250831A patent/JPH02123648A/ja active Pending
- 1989-09-29 CA CA000615205A patent/CA1317628C/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68915098D1 (de) | 1994-06-09 |
EP0362057A1 (de) | 1990-04-04 |
FR2637415A1 (fr) | 1990-04-06 |
CA1317628C (fr) | 1993-05-11 |
IL91786A (en) | 1992-08-18 |
JPH02123648A (ja) | 1990-05-11 |
FR2637415B1 (fr) | 1990-11-30 |
DE68915098T2 (de) | 1994-10-27 |
US4999502A (en) | 1991-03-12 |
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