EP0355476A3 - Composition for growth of homogeneous lithium niobate crystals - Google Patents

Composition for growth of homogeneous lithium niobate crystals Download PDF

Info

Publication number
EP0355476A3
EP0355476A3 EP19890114003 EP89114003A EP0355476A3 EP 0355476 A3 EP0355476 A3 EP 0355476A3 EP 19890114003 EP19890114003 EP 19890114003 EP 89114003 A EP89114003 A EP 89114003A EP 0355476 A3 EP0355476 A3 EP 0355476A3
Authority
EP
European Patent Office
Prior art keywords
composition
lithium niobate
starting
homogeneous
measurement system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890114003
Other languages
German (de)
French (fr)
Other versions
EP0355476B1 (en
EP0355476A2 (en
Inventor
Peter F. Bordui
Richard G. Norwood
John L. Nightingale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0355476A2 publication Critical patent/EP0355476A2/en
Publication of EP0355476A3 publication Critical patent/EP0355476A3/en
Application granted granted Critical
Publication of EP0355476B1 publication Critical patent/EP0355476B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A new compositional relationship in the starting charge of a crystal growth station (Fig. 1) provides homogeneous monocrystalline lithium niobate. A new measurement system (Fig. 2) provides Curie point values of significantly greater accuracy then that of conventional measurements. Careful control of the starting charge. composition for crystal growth and effective utilization of the measurement system enable the determination of the compositional range of starting charges for producing congruent crystalline production. The composition corresponds to a mol percentage of 48.35±.01 to 48.40±.01 of Li₂O and the remainder Nb₂O₅ for producing homogeneous crystal whose solidification fraction of the molten charge exceeds that which was heretofore achievable.
EP89114003A 1988-08-26 1989-07-28 Composition for growth of homogeneous lithium niobate crystals Expired - Lifetime EP0355476B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US236960 1988-08-26
US07/236,960 US5310448A (en) 1988-08-26 1988-08-26 Composition for growth of homogeneous lithium niobate crystals

Publications (3)

Publication Number Publication Date
EP0355476A2 EP0355476A2 (en) 1990-02-28
EP0355476A3 true EP0355476A3 (en) 1991-08-07
EP0355476B1 EP0355476B1 (en) 1999-09-22

Family

ID=22891739

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89114003A Expired - Lifetime EP0355476B1 (en) 1988-08-26 1989-07-28 Composition for growth of homogeneous lithium niobate crystals

Country Status (4)

Country Link
US (1) US5310448A (en)
EP (1) EP0355476B1 (en)
JP (1) JP2773045B2 (en)
DE (1) DE58909858D1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3479111B2 (en) * 1994-03-25 2003-12-15 日本碍子株式会社 Electro-optics
US20030138002A1 (en) * 2001-05-02 2003-07-24 Reynolds Thomas A. New materials useful as saturable absorbers
EP1329744B1 (en) * 2002-01-10 2007-08-15 Shin-Etsu Chemical Co., Ltd. Lithium Niobate and Lithium Tantalate Etalons and corresponding producing method
US6951120B2 (en) * 2002-03-19 2005-10-04 Wisconsin Alumni Research Foundation Machining of lithium niobate by laser ablation
CN101978317A (en) * 2008-03-20 2011-02-16 晶体技术有限公司 Lithium niobate wafers with narrow distribution of surface acoustic wave properties
US20120280224A1 (en) * 2009-06-25 2012-11-08 Georgia Tech Research Corporation Metal oxide structures, devices, and fabrication methods
US8425875B2 (en) * 2009-09-09 2013-04-23 Crystal Technology, Inc. Lithium niobate SAW wafer containing Ta impurities
CN101962801B (en) * 2010-10-15 2012-05-23 北京工业大学 Method for rapidly growing Nb205 crystal
JP2021155246A (en) * 2020-03-26 2021-10-07 住友金属鉱山株式会社 Lithium niobate single crystal and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528765A (en) * 1967-06-08 1970-09-15 Union Carbide Corp Lithium niobate crystals having elevated phase matching temperatures and method therefor
US3607752A (en) * 1970-06-30 1971-09-21 Ciba Ltd Process for the culture of large monocrystals of lithium niobate
JPS6153200A (en) * 1984-08-21 1986-03-17 Hamamatsu Photonics Kk Production of lithium niobate single crystal plate
JPS6278197A (en) * 1985-09-27 1987-04-10 アメリカン　テレフォン　アンド　テレグラフ　カムパニー Manufacture of homogeneous lithium niobate

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHEMICAL ABSTRACTS, Band 107, Nr. 8, 24. August 1987, Seite 647, Zusammenfassung Nr. 68686m, Columbus, Ohio, US; & JP-A-62 78 197 (AMERICAN TELEPHONE AND TELEGRAPH CO.) 10-04-1987 *
PATENT ABSTRACTS OF JAPAN, Band 10, Nr. 214 (C-362)[2270], 25. Juli 1986; & JP-A-61 53 200 (HAMAMATSU PHOTONICS K.K.) 17-03-1986 *
REVIEW OF THE ELECTRICAL COMMUNICATION LABORATORIES, Band 23, Nr. 5-6, Mai-Juni 1975, Seiten 569-580; K. SUGII et al.: "Characterization of LiNbO3 single crystals by X-ray topography" *

Also Published As

Publication number Publication date
JPH0274595A (en) 1990-03-14
DE58909858D1 (en) 1999-10-28
JP2773045B2 (en) 1998-07-09
EP0355476B1 (en) 1999-09-22
US5310448A (en) 1994-05-10
EP0355476A2 (en) 1990-02-28

Similar Documents

Publication Publication Date Title
EP0355476A3 (en) Composition for growth of homogeneous lithium niobate crystals
AU502853B2 (en) A process of making'portland cement
JPS56114895A (en) Manufacture of high purity single crystal by czochralski crucible pullinggup method
AU1505483A (en) Solid state growth of single crystal
JPS5576000A (en) High electroconductivity lithium nitride crystal* its manufacture and control method for said electroconductivity
JPS5515999A (en) Depositing particulate silicon crystal
ZA857748B (en) Phosphate bonding of reactive spinels for use as refractory materials
JPS565400A (en) Crystal growth of ktiopo4 and its analogue compound
WO1993024679A3 (en) Single cesium titanyl arsenate-type crystals, and their preparation
DE3067983D1 (en) Control of the hydrogen bonding in reactively sputtered amorphous silicon
ES2017814A6 (en) Lithium niobate single crystals with congruent composition and process for producing them.
JPS557596A (en) Manufacture of minute polycrystal lithium nitride
JPS5751196A (en) Melt for growing single crystal of magnetoplumbite and single crystal growth of magnetoplumbite
UA16591A1 (en) Method for preparation charge for growing single crystals of lithium niobate and tantalate
GB1450237A (en) Electric timepieces
JPS5328600A (en) Production of oxide single crystal for surface-wave and piezoelectric application
HUBERT EXAMINATIONS ABOUT SURFACE CRYSTALLISATION OF GLASS WITH A COMPOSITION OF CORDIERITE[2 MGO.
SU700442A1 (en) Method of preparing crystalline quartz
JPS53131059A (en) Method of manufacturing flectrode plate for use in liquid crystal indication
Watanabe et al. Glass Ceramics
Pikunov et al. Growing Single Crystals of Samarium--Cobalt Alloys
JPS5532717A (en) Jewelly material
SOKASKI Low temperature deformation characteristics of yttrium single crystals[Ph. D. Thesis]
Rumyantsev et al. NUCLEATION AND GROWTH OF CRYSTALS IN THE PSEUDOBINARY SYSTEM GEHLENITE-DICALCIUM SILICATE
Nakamura CSL Theory for Ceramic Materials

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE GB

17P Request for examination filed

Effective date: 19901205

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE GB

17Q First examination report despatched

Effective date: 19931007

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE GB

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 19990922

REF Corresponds to:

Ref document number: 58909858

Country of ref document: DE

Date of ref document: 19991028

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20080722

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20080722

Year of fee payment: 20

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20090727