EP0283773A2 - Miniaturized secondary electron multiplier and its manufacturing procedure - Google Patents

Miniaturized secondary electron multiplier and its manufacturing procedure Download PDF

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Publication number
EP0283773A2
EP0283773A2 EP88103116A EP88103116A EP0283773A2 EP 0283773 A2 EP0283773 A2 EP 0283773A2 EP 88103116 A EP88103116 A EP 88103116A EP 88103116 A EP88103116 A EP 88103116A EP 0283773 A2 EP0283773 A2 EP 0283773A2
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EP
European Patent Office
Prior art keywords
dynodes
secondary electron
array
electron multiplier
conductor tracks
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EP88103116A
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German (de)
French (fr)
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EP0283773A3 (en
EP0283773B1 (en
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Wolfgang Dr. Ehrfeld
Herbert Dr. Moser
Dietrich Dr. Münchmeyer
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Forschungszentrum Karlsruhe GmbH
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Kernforschungszentrum Karlsruhe GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3425—Metals, metal alloys

Definitions

  • the invention relates to a secondary electron multiplier according to the preamble of claim 1 and a method for producing such a secondary electron multiplier.
  • Such a secondary electron multiplier is known from the company publication SC-5 by Hamamatsu (catalog 1983) under the type designation R 1635. With eight steps, it has a diameter of 10 mm and a length of approx. 55 mm. These dimensions do not allow use in miniaturized measuring systems.
  • Micro-channel plates (Nuclear Instruments and Methods 162, 587-601 (1979)) are also known. Although they meet the requirement for small space requirements, they have a considerable dead time after a signal pulse, which limits their applicability to very weak radiation and particle signals.
  • Layered channel plates are also known (Advances in Electronics and Electron Physics 33A, 117-123 (1972)). Although they avoid the disadvantage of a long dead time, they have considerable electron losses from stage to stage, which in turn makes them unsuitable for applications with extremely small radiation or particle signals. Layered duct plates are also known (DE 24 14 658), in which such losses occur by forming the duct walls by means of etching should be reduced in size, but this type of design has narrow limits. Finally, arrays of secondary electron multipliers are known from high energy physics (F. Binon et al, Nuclear Instruments and Methods, A248 (1986), 86-102). Due to their large space requirement, they are completely unsuitable for the construction of miniaturized measuring systems.
  • the object of the invention is to create a micro-secondary electron multiplier and arrays thereof compared to the prior art shown, which have an extremely small space requirement, a high time resolution, a high sensitivity and a high flexibility in the shaping.
  • micro-secondary electron multiplier and multiple arrangements (arrays) thereof as sensors in miniaturized measuring systems for radiation or particles are advantageously characterized by a small space requirement and high spatial and time resolution.
  • the use of deep X-ray lithography and micro-electroplating enables the construction of an extremely small system of discrete dynodes, the shape of which is selected in such a way that the electrons are focused from one dynode to the next, thus minimizing electron losses.
  • the sensitivity is advantageously influenced.
  • the supply of power to the dynodes via discrete conductor tracks allows the external supply to be matched to the signal amplitude, so that the dynamic range of the micro-secondary electron multiplier becomes very large.
  • the greatly reduced length of the secondary electron multiplier shortens the electron transit time from cathode to anode, which has a favorable effect on the rise time of pulses and thus on the achievable time resolution.
  • the negative mold is galvanically filled with a metal using the base plate as an electrode, whereupon the rest Liche resist material is removed with a solvent.
  • a positive of the bar structure to be produced using the LIGA technique is molded as a reusable tool with a plastic, whereupon the resulting negative shape is filled up by galvanic deposition of metal and the remaining plastic is removed.
  • extremely precise and fine structures can be produced with lateral dimensions in the ⁇ m range with a freely selectable height of up to approx. 2mm. At slightly lower heights, minimal lateral dimensions in the submicron range can also be achieved.
  • X-ray radiation from an electron synchrotron or storage ring is particularly suitable as a radiation source for this purpose.
  • the method described in claim 13 also makes it possible to build a large number of micro-secondary electron multipliers next to one another on the same base plate as a micro-secondary electron multiplier array. As a result, an extremely high packing density is achieved, which has a favorable effect on the spatial resolution that can be achieved, an aspect that is particularly important for tomography and for detectors in high-energy physics.
  • the position of the signal inputs can be adapted to predetermined contours, for example to the Rowland circle, to an arched image area or to a cylinder the jacket as in the scattered light radiometer described below as an exemplary embodiment.
  • one of the substrate plates is provided with a translucent wall, which also carries photocathodes, and thus the micro-secondary electron multiplier (array) can be made into a micro-photomultiplier (array).
  • the structure of a micro-secondary electron multiplier is shown schematically in Figure 1.
  • the dynodes 1, the conductor tracks 2 attached to their voltage supply and the anode 3 can be seen. These structures are applied to the base plate 4.
  • a second plate shown in dashed lines, carries a glass wall 6 on which the photocathode 7 is applied at a suitable point. Additional electrodes 8, 9 serve to focus the photoelectrons triggered on the photocathode onto the first dynode 1.
  • the plates are connected to one another by glass soldering and, if necessary, form a vacuum-tight housing for the secondary electron multiplier.
  • the multiplication requires electron energies of the order of magnitude 100 eV.
  • FIG. 2a schematically shows a multiple arrangement of micro-secondary electron multipliers.
  • numerous micro-secondary electron multipliers are arranged side by side and the routing of the conductor tracks 2 has been adapted accordingly.
  • 2b schematically shows a multiple arrangement with common dynodes 1.
  • 3a to 3h show an example of the production of a micro-secondary electron multiplier or a multiple arrangement (arrays), X-ray depth lithography with synchrotron radiation and electroforming being used as the most important process steps.
  • a detailed description of these processes can be found in EW Becker, W. Ehrfeld, P. Hagmann, A. Maner and D Münchmeyer "Fabrication of Microstructures with high aspect ratio and great structural heights by synchrotron radiation lithography, galvanoforming, and plastic molding (LIGA-process ) ", Microelectronic Engineering 4 (1986) 35-36.
  • 3a shows a base plate 1 made of aluminum oxide ceramic. The thickness of the base plate 1 is about 1 mm, the area is about 10 cm x 10 cm.
  • the base plate 1 is spun with a thin layer 2 of photoresist (e.g. AZ 1350 Kalle, Wiesbaden) coated and pretreated according to the manufacturer's instructions (Fig. 3b).
  • photoresist e.g. AZ 1350 Kalle, Wiesbaden
  • the photoresist is irradiated and developed lithographically through a mask, so that a photoresist structure 3 is formed on the base plate 1 (FIG. 3c).
  • a 30 nm thick layer 4 made of titanium and then another 200 nm thick layer made of nickel is deposited over the entire surface by means of a sputtering process.
  • the photoresist 3 is then removed with acetone in the immersion bath, the regions of the metal layers 4 and 5 which are located on the photoresist structure 3 also being removed.
  • a metal layer structure 4, 5 remains on the base plate 1 (FIG. 3d).
  • a layer 6 of a polymethyl methacrylate casting compound (PMMA) is now poured on in a thickness of 1 mm, polymerized and then structured by means of deep X-ray lithography with synchrotron radiation and subsequent development (FIG. 3f).
  • Nickel which represents the dynodes 8 of the micro-secondary electron multiplier, is electrodeposited into the PMMA shaped structure 7 thus produced.
  • the remaining PMMA regions 7 are then removed in a solvent (FIG.
  • the metal structure 10 is ver by diffusion soldering with silver with the dynodes 8 soldering, whereby the micro-secondary electron multiplier, consisting of a base plate 1, a cover plate 9, discrete dynodes 8, conductor tracks 11 for contacting the dynodes and conductor tracks 12 for the vertical focusing of the electrons, is completed (FIG. 3h).
  • Another method for producing the microstructures is in the impression technique.
  • X-ray lithography with synchrotron radiation is used to mold a positive of the dynode structure to be produced as a reusable tool with a plastic, whereupon the resulting negative shape is filled up by electrodeposition of metal and the remaining plastic is removed.
  • the base plate required for fixing and contacting the dynodes is inserted into the mold during the molding process, so that the plastic forms a firm connection with the base plate.
  • a multi-channel scattered light radiometer (FIG. 4) is used as an application example.
  • the scattering of light on small particles is an important aid in the investigation of size and shape parameters in particle systems (M. Kerker, The Scattering of Light, Academic Press, New York, 1969).
  • One of the methods that provide the most information is measuring the angular distribution of the scattered light. Particularly cheap for the signal-to-noise ratio, the measurement time required and the time resolution is the simultaneous measurement of the scattered light at many different angles.
  • the micro-secondary electron multiplier arrays according to the invention allow the construction of much smaller, more sensitive and robust electronic multichannel detectors than the state of the art (German Patent 23 38 481, US Patent 39 32762, German Utility Model G 8415886.7).
  • the supply of the dynodes via conductor tracks allows the formation of groups of multi-channel micro-secondary electron multipliers, which can be connected to various voltage supplies.
  • the sensitivity as a function of the scattering angle can be adapted to the scattered light angle distribution. This means, for example, that in the case of highly forward scattering particles, where the intensity difference between forward and backward can be several orders of magnitude, the rear detector area, about 90 ° -180 °, with the maximum gain, the middle area, about 20 ° -90 °, with a medium gain and the front area, 0 ° -20 °, can be driven just below the use of saturation effects.
  • Two sector-shaped regions are provided with multiple arrangements (arrays) of microsecond electron multipliers 2 on an annular base plate 1.
  • the inputs of the microsecond multiplier 2 are each arranged on an arc and point to the center of the base plate 1.
  • the sector areas are each surrounded by a glass wall 3, which carries photocathodes on its inner arc. which are each assigned to a microsecond electron multiplier.
  • the glass walls 3 are closed at the top with a cover plate 4, so that a vacuum-tight envelope of the multiple arrangements (arrays) is created.
  • the signal outputs of the microsecond multiplier 2 are conducted with conductor tracks 5 to the outer edge of the base plate 1, where there are contacts 6 for external connection.
  • the conductor tracks for supplying the multiple arrangements (arrays) are guided through metal-filled bores 7 to the underside of the base plate 1 and from there through conductor tracks 8 also to external connections 9 on the outer edge of the base plate 1.
  • a semiconductor laser 10 In the free sectors of the base plate 1, a semiconductor laser 10, optical elements 11, diaphragms 12 and a wedge-shaped light sump 13 are arranged in such a way that a beam path suitable for the scattering of light due to density fluctuations of matter located in the scattering volume 14 is produced.
  • the version shown in FIG. 4 makes it possible to check the symmetry of the scattered radiation with respect to the direction of the incident primary beam. This can be of considerable importance, e.g. for systems of non-symmetrical particles, which have been given an orientation by fluid dynamic or electromagnetic influence.
  • the flat structure of such integrated measuring systems facilitates their use in several planes along a particle beam and thus the tracking of a temporal evolution of the particle parameters. It is also well suited for the application of a magnetic field for influencing the electron orbits.
  • the application example used relates to light scattering, the scope also extends to scattering processes in which charged particles, such as electrons and ions, or excited neutrals are present, and also to radiation or particle sources which emit themselves.

Abstract

The invention relates to a secondary electron multiplier with discrete dynodes. The invention is based on the object, in comparison with the indicated prior art, of producing a miniaturised secondary electron multiplier, and arrays thereof, which require very little space, have good time resolution, good sensitivity and good flexibility for moulding. The object is achieved in that the dynodes are micro-structured and are fitted on an insulating substrate plate which is provided with electrical conductor tracks for the connection of the dynodes.

Description

Die Erfindung betrifft einen Sekundärelektronenverviel­facher nach dem Oberbegriff des Anspruches 1 sowie ein Verfahren zur Herstellung eines solchen Sekundärelektro­nenvervielfachers.The invention relates to a secondary electron multiplier according to the preamble of claim 1 and a method for producing such a secondary electron multiplier.

Ein derartiger Sekundärelektronenvervielfacher ist aus der Firmendruckschrift SC-5 von Hamamatsu (Katalog 1983) unter der Typenbezeichnung R 1635 bekannt. Er besitzt bei acht Stufen einen Durchmesser von 10 mm und eine Länge von ca. 55mm. Diese Abmessungen erlauben nicht den Einsatz in miniaturisierten Meßsystemen.Such a secondary electron multiplier is known from the company publication SC-5 by Hamamatsu (catalog 1983) under the type designation R 1635. With eight steps, it has a diameter of 10 mm and a length of approx. 55 mm. These dimensions do not allow use in miniaturized measuring systems.

Bekannt sind auch Mikro-Kanalplatten (Nuclear Instru­ments und Methods 162, 587-601 (1979)). Sie erfüllen zwar die Anforderung des kleinen Raumbedarfs, weisen jedoch eine erhebliche Totzeit nach einem Signalimpuls auf, wodurch ihre Anwendbarkeit auf sehr schwache Strah­lungs- und Teilchensignale beschränkt bleibt.Micro-channel plates (Nuclear Instruments and Methods 162, 587-601 (1979)) are also known. Although they meet the requirement for small space requirements, they have a considerable dead time after a signal pulse, which limits their applicability to very weak radiation and particle signals.

Weiterhin sind auch geschichtete Kanalplatten bekannt (Advances in Electronics and Electron Physics 33A, 117-­123 (1972)). Sie vermeiden zwar den Nachteil einer lan­gen Totzeit, weisen jedoch von Stufe zu Stufe erhebliche Elektronenverluste auf, wodurch sie wiederum für Anwen­dungen mit extrem kleinen Strahlungs- oder Teilchensig­nalen ungeeignet sind. Weiterhin sind geschichtete Kanalplatten bekannt (DE 24 14 658), bei denen solche Verluste durch Formung der Kanalwände mittels Ätzen verkleinert werden sollen, jedoch sind dieser Art von Formgebung enge Grenzen gesetzt. Schließlich sind aus der Hochenergiephysik Arrays von Sekundärelektronenvervielfa­chern bekannt (F. Binon et al, Nuclear Instruments and Methods, A248 (1986), 86 - 102). Durch ihren großen Platz­bedarf sind sie für den Aufbau miniaturisierter Meßsysteme vollständig ungeeignet.Layered channel plates are also known (Advances in Electronics and Electron Physics 33A, 117-123 (1972)). Although they avoid the disadvantage of a long dead time, they have considerable electron losses from stage to stage, which in turn makes them unsuitable for applications with extremely small radiation or particle signals. Layered duct plates are also known (DE 24 14 658), in which such losses occur by forming the duct walls by means of etching should be reduced in size, but this type of design has narrow limits. Finally, arrays of secondary electron multipliers are known from high energy physics (F. Binon et al, Nuclear Instruments and Methods, A248 (1986), 86-102). Due to their large space requirement, they are completely unsuitable for the construction of miniaturized measuring systems.

Der Erfindung liegt die Aufgabe zugrunde, gegenüber dem aufgezeigten Stand der Technik einen Mikro-Sekundärelek­tronenvervielfacher und Arrays davon zu schaffen, die einen äußerst geringen Platzbedarf, eine hohe Zeitauf­lösung, eine große Empfindlichkeit und eine hohe Flexi­bilität bei der Formgebung aufweisen.The object of the invention is to create a micro-secondary electron multiplier and arrays thereof compared to the prior art shown, which have an extremely small space requirement, a high time resolution, a high sensitivity and a high flexibility in the shaping.

Diese Aufgabe wird erfindungsgemäß mittels der in kenn­zeichnenden Teil des Anspruches 1 angegebenen Merkmals und dem Verfahren nach Anspruch 11 gelöst.This object is achieved by means of the feature specified in the characterizing part of claim 1 and the method according to claim 11.

Die übrigen Ansprüche 2 bis 10 sowie die Ansprüche 12 bis 17 geben vorteilhafte Weiterbildungen und Ausführungs­formen des erfindungsgemäßen Gegenstandes bzw. des Ver­fahrens an.The remaining claims 2 to 10 and claims 12 to 17 indicate advantageous developments and embodiments of the subject matter or method according to the invention.

Die erfindungsgemäßen Mikro-Sekundärelektronenverviel­facher und Vielfachanordnungen (Arrays) davon als Sen­soren in miniaturisierten Meßsystemen für Strahlung oder Teilchen zeichnen sich in vorteilhafter Weise durch geringen Raumbedarf sowie hohe Orts- und Zeitauflösung aus.The micro-secondary electron multiplier and multiple arrangements (arrays) thereof as sensors in miniaturized measuring systems for radiation or particles are advantageously characterized by a small space requirement and high spatial and time resolution.

Durch Einsatz von Röntgentiefenlithographie und Mikrogal­vanik wird der Aufbau eines extrem kleinen Systems von diskreten Dynoden ermöglicht, deren Form so gewählt ist, daß die Elektronen von einer Dynode auf die nächste fokussiert und Elektronenverluste so minimiert werden. Die Empfindlichkeit wird dadurch vorteilhaft beeinflußt. Die Spannungsversorgung der Dynoden über diskrete Leiterbahnen gestattet es, die externe Versorgung an die Signalampli­tude anzupassen, so daß der dynamische Bereich des Mikro-­Sekundärelektronenvervielfachers sehr groß wird. Durch die stark reduzierte Länge des Sekundärelektronenvervielfa­chers ist die Elektronenlaufzeit von Kathode zu Anode verkürzt, was sich günstig auf die Anstiegszeit von Impul­sen und damit auf die erzielbare Zeitauflösung auswirkt.The use of deep X-ray lithography and micro-electroplating enables the construction of an extremely small system of discrete dynodes, the shape of which is selected in such a way that the electrons are focused from one dynode to the next, thus minimizing electron losses. The sensitivity is advantageously influenced. The supply of power to the dynodes via discrete conductor tracks allows the external supply to be matched to the signal amplitude, so that the dynamic range of the micro-secondary electron multiplier becomes very large. The greatly reduced length of the secondary electron multiplier shortens the electron transit time from cathode to anode, which has a favorable effect on the rise time of pulses and thus on the achievable time resolution.

Die Herstellung derart feiner Strukturen auf röntgen­tiefenlithographisch-galvanoplastischem Wege (LIGA-Tech­nik) bzw. durch die hiervon abgeleitete Abformtechnik gemäß Merkmal b) von Patentanspruch 13 ist u.a. in dem KfK-Bericht 3995 des Kernforschungszentrums Karlsruhe (November 1985) beschrieben und dargestellt. Danach wird z.B. ein röntgenstrahlenempfindlicher Positiv-Resist auf eine metallische Grundplatte aufgebracht und partiell über eine Maske mit Röntgenstrahlen so bestrahlt und ent­wickelt, daß eine Negativform der herzustellenden Stege entsteht, deren Höhe der Schichtdicke des Positiv-Resist entspricht; sie kann bis zu 2 mm betragen, je nach der Eindringtiefe der Röntgenstrahlung. Anschließend wird die Negativform galvanisch mit einem Metall unter Verwendung der Grundplatte als Elektrode aufgefüllt, worauf das rest­ liche Resist-Material mit einem Lösungsmittel entfernt wird. Bei der Abformtechnik wird ein mit der LIGA-Technik hergestelltes Positiv der herzustellenden Steg-Struktur als wiederholt verwendbares Werkzeug mit einem Kunststoff abgeformt, worauf die so entstandene Negativform durch galvanisches Abscheiden von Metall aufgefüllt und der restliche Kunststoff entfernt wird. In beiden Fällen lassen sich extrem genaue und feine Strukturen herstellen mit lateralen Abmessungen im µm-Bereich bei einer frei wählbaren Höhe bis zu ca. 2mm. Bei etwas geringeren Höhen lassen sich auch minimale laterale Abmessungen im Sub­mikrometerbereich realisieren. Als Strahlenquelle für diesen Zweck ist insbesondere die Röntgenstrahlung eines Elektronen-Synchrotrons oder -Speicherrings (Synchrotron­strahlung) geeignet.The production of such fine structures by X-ray lithography-galvanoplastic (LIGA technology) or by means of the impression technique derived therefrom according to feature b) of claim 13 is described and illustrated, inter alia, in the KfK report 3995 of the Karlsruhe Nuclear Research Center (November 1985). Then, for example, an X-ray sensitive positive resist is applied to a metallic base plate and partially irradiated and developed with X-rays through a mask in such a way that a negative shape of the webs to be produced arises, the height of which corresponds to the layer thickness of the positive resist; it can be up to 2 mm, depending on the penetration depth of the X-rays. Then the negative mold is galvanically filled with a metal using the base plate as an electrode, whereupon the rest Liche resist material is removed with a solvent. In the impression technique, a positive of the bar structure to be produced using the LIGA technique is molded as a reusable tool with a plastic, whereupon the resulting negative shape is filled up by galvanic deposition of metal and the remaining plastic is removed. In both cases extremely precise and fine structures can be produced with lateral dimensions in the µm range with a freely selectable height of up to approx. 2mm. At slightly lower heights, minimal lateral dimensions in the submicron range can also be achieved. X-ray radiation from an electron synchrotron or storage ring (synchrotron radiation) is particularly suitable as a radiation source for this purpose.

Durch das im Anspruch 13 beschriebene Verfahren ist es weiterhin möglich, eine große Anzahl von Mikro-Sekundär­elektronenvervielfachern nebeneinander auf derselben Grundplatte als Mikro-Sekundärelektronenvervielfacher-­Array aufzubauen. Dadurch wird eine extrem hohe Packungs­dichte erreicht, die sich günstig auf das erreichbare räumliche Auflösungsvermögen auswirkt, ein Aspekt, der insbesondere für die Tomographie und für Detektoren in der Hochenergiephysik von Bedeutung ist.The method described in claim 13 also makes it possible to build a large number of micro-secondary electron multipliers next to one another on the same base plate as a micro-secondary electron multiplier array. As a result, an extremely high packing density is achieved, which has a favorable effect on the spatial resolution that can be achieved, an aspect that is particularly important for tomography and for detectors in high-energy physics.

Bei einem Array von Mikro-Sekundärelektronenverviel­fachern kann die Position der Signal-Eingänge an vorge­gebene Konturen angepaßt werden, z.B. an den Rowland-­Kreis, an eine gewölbte Bildfläche oder an einen Zylin­ dermantel wie beim nachstehend als Ausführungsbeispiel beschriebenen Streulichtradiometer.In the case of an array of micro secondary electron multipliers, the position of the signal inputs can be adapted to predetermined contours, for example to the Rowland circle, to an arched image area or to a cylinder the jacket as in the scattered light radiometer described below as an exemplary embodiment.

Ein weiterer Vorteil liegt darin, daß eine der Substrat­platten mit einer lichtdurchlässigen Wand, die zusätz­lich noch Photokathoden trägt, versehen werden und damit der Mikro-Sekundärelektronenvervielfacher (-Array) zu einem Mikro-Photomultiplier(-Array) gemacht werden kann.Another advantage is that one of the substrate plates is provided with a translucent wall, which also carries photocathodes, and thus the micro-secondary electron multiplier (array) can be made into a micro-photomultiplier (array).

Gibt man der lichtdurchlässigen Wand einen linsenförmi­gen Querschnitt und bringt die Photokathoden auf einem getrennten Träger aus lichtdurchlässigem Material an, so kann man zwischen Lichtquelle und Photokathode eine optische Abbildung herstellen, die sich vorteilhaft auswirkt auf die Definition des Streuvolumens und auf das Signal-Rausch-Verhältnis.If you give the translucent wall a lenticular cross-section and attach the photocathodes on a separate support made of translucent material, you can create an optical image between the light source and photocathode, which has an advantageous effect on the definition of the scattering volume and on the signal-to-noise ratio .

Der Aufbau eines Mikro-Sekundärelektronenvervielfachers ist schematisch in Figur 1 dargestellt. Man erkennt die Dynoden 1, die zu ihrer Spannungsversorgung angebrachten Leiterbahnen 2 sowie die Anode 3. Diese Strukturen sind auf der Grundplatte 4 aufgebracht. Eine zweite Platte trägt, gestrichelt dargestellt, eine Glaswand 6, auf der an geeigneter Stelle die Photo­kathode 7 aufgebracht ist. Weitere Elektroden 8, 9 die­nen der Fokussierung der auf der Photokathode ausge­lösten Photoelektronen auf die erste Dynode 1. Die Platten werden durch Glaslöten miteinander verbunden und bilden, falls erforderlich, ein vakuumdichtes Gehäuse für den Sekundärelektronenvervielfacher. Die Verviel­fachung erfordert Elektronenenergien von der Größenord­ nung 100 eV. Mit einem typischen sicheren Betriebswert für die Oberflächenfeldstärke von 1 kV/mm ergibt sich ein minimaler Leiterbahnabstand von 0,1 mm und bei 9 Dynoden mit einer Kantenlänge von je 1 mm eine Gesamt­länge von ca. 10 mm. Oberflächenaufladung und daraus folgende elektrische Überschläge werden durch die, wenn auch schwache, Leitfähigkeit der Oberflächenschicht der Wände vermieden.The structure of a micro-secondary electron multiplier is shown schematically in Figure 1. The dynodes 1, the conductor tracks 2 attached to their voltage supply and the anode 3 can be seen. These structures are applied to the base plate 4. A second plate, shown in dashed lines, carries a glass wall 6 on which the photocathode 7 is applied at a suitable point. Additional electrodes 8, 9 serve to focus the photoelectrons triggered on the photocathode onto the first dynode 1. The plates are connected to one another by glass soldering and, if necessary, form a vacuum-tight housing for the secondary electron multiplier. The multiplication requires electron energies of the order of magnitude 100 eV. With a typical safe operating value for the surface field strength of 1 kV / mm, there is a minimum interconnect spacing of 0.1 mm and for 9 dynodes with an edge length of 1 mm, a total length of approx. 10 mm. Surface charging and the resulting electrical flashovers are avoided by the, albeit weak, conductivity of the surface layer of the walls.

Figur 2a zeigt schematisch eine Vielfachanordnung von Mikro-Sekundärelektronenvervielfachern. Hier sind zahl­reiche Mikro-Sekundärelektronenvervielfacher nebeneinan­der angeordnet und die Führung der Leiterbahnen 2 ent­sprechend angepaßt worden. Fig. 2b zeigt schematisch eine Vielfachanordnung mit gemeinsamen Dynoden 1.FIG. 2a schematically shows a multiple arrangement of micro-secondary electron multipliers. Here numerous micro-secondary electron multipliers are arranged side by side and the routing of the conductor tracks 2 has been adapted accordingly. 2b schematically shows a multiple arrangement with common dynodes 1.

Fig. 3a bis 3h zeigt beispielhaft die Herstellung eines Mikro-Sekundärelektronenvervielfachers oder einer Viel­fachanordnung (Arrays), wobei als wichtigste Verfahrens­schritte Röntgentiefenlithographie mit Synchrotronstrah­lung und Galvanoformung eingesetzt werden. Eine detail­lierte Beschreibung dieser Prozesse ist in E.W. Becker, W. Ehrfeld, P. Hagmann, A. Maner und D Münchmeyer "Fabri­cation of Microstructures with high aspect ratio and great structural heights by synchrotron radiation lithography, galvanoforming, and plastic moulding (LIGA-process)", Microelectronic Engineering 4 (1986) 35-36 angegeben. Fig. 3a zeigt eine Grundplatte 1 aus Aluminiumoxid-Keramik. Die Dicke der Grundplatte 1 beträgt etwa 1 mm, die Fläche etwa 10 cm x 10 cm. Die Grundplatte 1 wird durch Aufschleudern mit einer dünnen Schicht 2 aus Fotolack (z.B.AZ 1350 der Fa. Kalle, Wiesbaden) beschichtet und nach Herstelleran­gaben vorbehandelt (Fig. 3b). In bekannter Weise wird der Fotolack über eine Maske lithographisch bestrahlt und entwickelt, so daß eine Fotolackstruktur 3 auf der Grund­platte 1 entsteht (Fig. 3c). Anschließend wird durch einen Sputterprozeß ganzflächig zunächst eine 30 nm dicke Schicht 4 aus Titan und dann eine weitere 200 nm dicke Schicht aus Nickel abgeschieden. Sodann wird der Fotolack 3 mit Aceton im Tauchbad entfernt, wobei auch die Bereiche der Metallschichten 4 und 5 entfernt werden, die sich auf der Fotolackstruktur 3 befinden. Es verbleibt eine Me­tallschichtstruktur 4, 5 auf der Grundplatte 1 (Fig. 3d). Wie im o.g. Artikel beschrieben, wird nun in einer Dicke von 1 mm eine Schicht 6 aus einer Polymethylmethacrylat-­Gießmasse (PMMA) aufgegossen, polymerisiert und dann mittels Röntgentiefenlithographie mit Synchrotronstrahlung und anschließendes Entwickeln strukturiert (Fig. 3f). In die so gefertigte Formstruktur 7 aus PMMA wird galvanisch Nickel abgeschieden, das die Dynoden 8 des Mikro-Sekundär­elektronenvervielfachers darstellt. Anschließend werden die verbliebenen PMMA-Bereiche 7 in einem Lösemittel ent­fernt (Fig. 3g). In gleicher Weise werden in denselben Arbeitsschritten durch Vorgabe entsprechender Strukturen auf den in den Lithographieprozessen verwendeten Masken andere Elemente des Mikro-Sekundärelektronenvervielfachers wie etwa Anoden, Abschirmungen und dergleichen parallel mit den Dynoden 8 gefertigt. Analog zu den Prozess-­Schritten in Fig. 3a bis 3d wird nun eine zur Grundplatte in Fig. 3d spiegelsymmetrische Deckplatte 9 mit Metall­strukturen 10 hergestellt. Die Metallstruktur 10 wird durch Diffusionslöten mit Silber mit den Dynoden 8 ver­ lötet, wodurch der Mikro-Sekundärelektronenvervielfacher, bestehend aus einer Grundplatte 1, einer Deckplatte 9, diskreten Dynoden 8, Leiterbahnen 11 zur Kontaktierung der Dynoden und Leiterbahnen 12 für die vertikale Fokussierung der Elektronen, fertiggestellt wird (Fig. 3h).3a to 3h show an example of the production of a micro-secondary electron multiplier or a multiple arrangement (arrays), X-ray depth lithography with synchrotron radiation and electroforming being used as the most important process steps. A detailed description of these processes can be found in EW Becker, W. Ehrfeld, P. Hagmann, A. Maner and D Münchmeyer "Fabrication of Microstructures with high aspect ratio and great structural heights by synchrotron radiation lithography, galvanoforming, and plastic molding (LIGA-process ) ", Microelectronic Engineering 4 (1986) 35-36. 3a shows a base plate 1 made of aluminum oxide ceramic. The thickness of the base plate 1 is about 1 mm, the area is about 10 cm x 10 cm. The base plate 1 is spun with a thin layer 2 of photoresist (e.g. AZ 1350 Kalle, Wiesbaden) coated and pretreated according to the manufacturer's instructions (Fig. 3b). In a known manner, the photoresist is irradiated and developed lithographically through a mask, so that a photoresist structure 3 is formed on the base plate 1 (FIG. 3c). Subsequently, a 30 nm thick layer 4 made of titanium and then another 200 nm thick layer made of nickel is deposited over the entire surface by means of a sputtering process. The photoresist 3 is then removed with acetone in the immersion bath, the regions of the metal layers 4 and 5 which are located on the photoresist structure 3 also being removed. A metal layer structure 4, 5 remains on the base plate 1 (FIG. 3d). As described in the above-mentioned article, a layer 6 of a polymethyl methacrylate casting compound (PMMA) is now poured on in a thickness of 1 mm, polymerized and then structured by means of deep X-ray lithography with synchrotron radiation and subsequent development (FIG. 3f). Nickel, which represents the dynodes 8 of the micro-secondary electron multiplier, is electrodeposited into the PMMA shaped structure 7 thus produced. The remaining PMMA regions 7 are then removed in a solvent (FIG. 3g). In the same way, other elements of the micro-secondary electron multiplier such as anodes, shields and the like are produced in parallel with the dynodes 8 in the same working steps by specifying corresponding structures on the masks used in the lithography processes. Analogous to the process steps in FIGS. 3a to 3d, a cover plate 9 with metal structures 10, which is mirror-symmetrical to the base plate in FIG. 3d, is now produced. The metal structure 10 is ver by diffusion soldering with silver with the dynodes 8 soldering, whereby the micro-secondary electron multiplier, consisting of a base plate 1, a cover plate 9, discrete dynodes 8, conductor tracks 11 for contacting the dynodes and conductor tracks 12 for the vertical focusing of the electrons, is completed (FIG. 3h).

Eine weitere Methode zur Herstellung der Mikrostrukturen besteht in der Abformtechnik. Dabei wird durch Röntgen­tiefenlithographie mit Synchrotronstrahlung eine Positiv der herzustellenden Dynodenstruktur als wiederholt ver­wendbares Werkzeug mit einem Kunststoff abgeformt, wo­rauf die entstandene Negativform durch galvanisches Abscheiden von Metall aufgefüllt und der restliche Kunst­stoff entfernt wird. Die für die Fixierung und Kontak­tierung der Dynoden erforderliche Grundplatte wird beim Abformprozess in das Werkzeug eingelegt, so daß der Kunststoff mit der Grundplatte eine feste Verbindung eingeht. Sowohl die direkte Herstellung der Mikrostruk­turen durch Röntgentiefenlithographie mit Synchrotron­strahlung als auch die Abformtechnik ermöglichen extreme Strukturgenauigkeiten mit Lateralabmessungen im µm-­Bereich bei einer frei wählbaren Höhe bis zu ca 2mm.Another method for producing the microstructures is in the impression technique. X-ray lithography with synchrotron radiation is used to mold a positive of the dynode structure to be produced as a reusable tool with a plastic, whereupon the resulting negative shape is filled up by electrodeposition of metal and the remaining plastic is removed. The base plate required for fixing and contacting the dynodes is inserted into the mold during the molding process, so that the plastic forms a firm connection with the base plate. Both the direct production of the microstructures by means of deep x-ray lithography with synchrotron radiation and the impression technique enable extreme structural accuracy with lateral dimensions in the µm range with a freely selectable height of up to approx. 2mm.

Als Anwendungsbeispiel wird ein Vielkanal-Streulichtradio­meter (Fig. 4) herangezogen. Bekanntlich ist die Streuung von Licht an kleinen Teilchen ein wichtiges Hilfsmittel bei der Untersuchung von Größen- und Formparametern in Teilchensystemen (M. Kerker, The Scattering of Light, Academic Press, New York, 1969). Eine der Methoden, die am meisten Information liefern, ist die Messung der Winkel­verteilung des gestreuten Lichts. Besonders günstig für das Signal-Rausch-Verhältnis, die benötigte Meßzeit und die Zeitauflösung ist die simultane Messung des Streu­lichts unter vielen, verschiedenen Winkeln. Die erfin­dungsgemäßen Mikro-Sekundärelektronenvervielfacher-Arrays erlauben den Aufbau wesentlich kleinerer, empfindlicherer und robusterer elektronischer Vielkanaldetektoren als es dem Stand der Technik entspricht (Deutsches Patent 23 38 481, US-Patent 39 32762, Deutsches Gebrauchsmuster G 8415886,7). Die Versorgung der Dynoden über Leiterbahnen erlaubt die Bildung von Gruppen von Vielkanal-Mikro-Sekun­därelektronenvervielfachern, die an verschiedene Spannungsversorgungen angeschlossen werden können. Da­durch kann die Empfindlichkeit als Funktion des Streu­winkels der Streulicht-Winkelverteilung angepaßt werden. Dies bedeutet beispielsweise, daß im Falle von stark vor­wärts streuenden Teilchen, wo der Intensitätsunterschied zwischen vorwärts und rückwärts mehrere Großenordnungen betragen kann, der hintere Detektorbereich, etwa 90°-180°, mit der maximalen Verstärkung, der mittlere Bereich, etwa 20°-90°, mit einer mittleren Verstärkung und der vordere Bereich, 0°-20°, gerade unterhalb des Einsatzes von Sätti­gungseffekten gefahren werden können.A multi-channel scattered light radiometer (FIG. 4) is used as an application example. As is known, the scattering of light on small particles is an important aid in the investigation of size and shape parameters in particle systems (M. Kerker, The Scattering of Light, Academic Press, New York, 1969). One of the methods that provide the most information is measuring the angular distribution of the scattered light. Particularly cheap for the signal-to-noise ratio, the measurement time required and the time resolution is the simultaneous measurement of the scattered light at many different angles. The micro-secondary electron multiplier arrays according to the invention allow the construction of much smaller, more sensitive and robust electronic multichannel detectors than the state of the art (German Patent 23 38 481, US Patent 39 32762, German Utility Model G 8415886.7). The supply of the dynodes via conductor tracks allows the formation of groups of multi-channel micro-secondary electron multipliers, which can be connected to various voltage supplies. As a result, the sensitivity as a function of the scattering angle can be adapted to the scattered light angle distribution. This means, for example, that in the case of highly forward scattering particles, where the intensity difference between forward and backward can be several orders of magnitude, the rear detector area, about 90 ° -180 °, with the maximum gain, the middle area, about 20 ° -90 °, with a medium gain and the front area, 0 ° -20 °, can be driven just below the use of saturation effects.

Auf einer ringförmigen Grundplatte 1 werden zwei sektor­förmige Gebiete mit Vielfachanordnungen (Arrays) von Mikrosekundärelektronenvervielfachern 2 versehen. Die Eingänge der Mikrosekundärelektronenvervielfacher 2 sind dabei auf je einem Kreisbogen angeordnet und weisen zum Mittelpunkt der Grundplatte 1. Die Sektor-Gebiete werden von je einer Glaswand 3 umschlossen, die auf ihrem inneren Bogen Photokathoden trägt. die jeweils einem Mikrosekundärelektronenvervielfacher zugeordnet sind.Two sector-shaped regions are provided with multiple arrangements (arrays) of microsecond electron multipliers 2 on an annular base plate 1. The inputs of the microsecond multiplier 2 are each arranged on an arc and point to the center of the base plate 1. The sector areas are each surrounded by a glass wall 3, which carries photocathodes on its inner arc. which are each assigned to a microsecond electron multiplier.

Die Glaswände 3 sind mit je einer Deckelplatte 4 nach oben verschlossen, so daß eine vakuumdichte Umhüllung der Vielfachanordnungen (Arrays) entsteht. Die Signal­ausgänge der Mikrosekundärelektronenvervielfacher 2 werden mit Leiterbahnen 5 zum äußeren Rand der Grundplatte 1 geführt, wo sich Kontakte 6 zum externen Anschluß befin­den. Die Leiterbahnen zur Versorgung der Vielfachanord­nungen (Arrays) werden durch metallgefüllte Bohrungen 7 zur Unterseite der Grundplatte 1 und von da durch Leiterbahnen 8 ebenfalls zu externen Anschlüssen 9 am Außenrand der Grundplatte 1 geführt. In den freien Sektoren der Grundplatte 1 werden ein Halbleiterlaser 10, optische Elemente 11, Blenden 12 und ein keilförmiger Lichtsumpf 13 derart angeordnet, daß ein für die Streuuung von Licht an Dichtefluktuationen von Materie, die sich im Streuvolumen 14 befindet, geeigne­ter Strahlengang entsteht.The glass walls 3 are closed at the top with a cover plate 4, so that a vacuum-tight envelope of the multiple arrangements (arrays) is created. The signal outputs of the microsecond multiplier 2 are conducted with conductor tracks 5 to the outer edge of the base plate 1, where there are contacts 6 for external connection. The conductor tracks for supplying the multiple arrangements (arrays) are guided through metal-filled bores 7 to the underside of the base plate 1 and from there through conductor tracks 8 also to external connections 9 on the outer edge of the base plate 1. In the free sectors of the base plate 1, a semiconductor laser 10, optical elements 11, diaphragms 12 and a wedge-shaped light sump 13 are arranged in such a way that a beam path suitable for the scattering of light due to density fluctuations of matter located in the scattering volume 14 is produced.

Die in Fig. 4 gezeigte Version macht es möglich, die Symmetrie der Streustrahlung bezüglich der Richtung des einfallenden Primärstrahles zu prüfen. Dies kann von erheblicher Bedeutung sein, z.B. für Systeme nicht­symmetrischer Teilchen, denen durch fluiddynamische oder elektromagnetische Einwirkung eine Orientierung aufge­prägt wurde.The version shown in FIG. 4 makes it possible to check the symmetry of the scattered radiation with respect to the direction of the incident primary beam. This can be of considerable importance, e.g. for systems of non-symmetrical particles, which have been given an orientation by fluid dynamic or electromagnetic influence.

Der flache Aufbau solcher integrierter Meßsysteme er­leichtert ihren Einsatz in mehreren Ebenen längs eines Teilchenstrahls und damit die Verfolgung einer zeit­lichen Evolution der Teilchenparameter. Er eignet sich darüberhinaus gut für die Anwendung eines Magnetfeldes zur Beeinflussung der Elektronenbahnen. Obwohl das heran­gezogene Anwendungsbeispiel sich auf die Lichtstreuung bezieht, erstreckt sich der Anwendungsbereich auch auf Streuprozesse, bei denen geladene Teilchen, wie Elek­tronen und Ionen, oder angeregte Neutrale vorliegen, und darüber hinaus auch auf Strahlungs- oder Teilchenquel­len, die selbst emittieren.The flat structure of such integrated measuring systems facilitates their use in several planes along a particle beam and thus the tracking of a temporal evolution of the particle parameters. It is also well suited for the application of a magnetic field for influencing the electron orbits. Although the application example used relates to light scattering, the scope also extends to scattering processes in which charged particles, such as electrons and ions, or excited neutrals are present, and also to radiation or particle sources which emit themselves.

Claims (16)

1. Sekundärelektronenvervielfacher mit diskreten Dynoden, dadurch gekennzeichnet, daß die Dynoden mikrostrukturiert und auf einer isolierenden Substratplatte, die mit elek­trischen Leiterbahnen zum Anschluß der Dynoden versehen ist, angebracht sind.1. Secondary electron multiplier with discrete dynodes, characterized in that the dynodes are microstructured and attached to an insulating substrate plate which is provided with electrical conductor tracks for connecting the dynodes. 2. Sekundärelektronenvervielfacher nach Anspruch 1, dadurch gekennzeichnet, daß die Dynoden auf röntgentiefenlitho­graphischem, auf röntgentiefenlithographisch-galvano­plastischem oder auf hiervon abgeleitetem abformtechni­schem bzw. abformtechnisch-galvanoplastischem Wege auf der Substratplatte hergestellt werden.2. Secondary electron multiplier according to claim 1, characterized in that the dynodes are produced on X-ray depth lithographic, on X-ray depth lithographic-galvanoplastic or on molding-derived or impression-technical-galvanoplastic ways on the substrate plate. 3. Vielfachanordnung (Array) von Sekundärelektronenverviel­fachern nach Anspruch 1 und 2, dadurch gekennzeichnet, daß mehrere Dynodenanordnungen auf der Substratplatte ange­ordnet und mit getrennten Ein- und Ausgängen versehen sind.3. Multiple arrangement (array) of secondary electron multipliers according to claim 1 and 2, characterized in that a plurality of dynode arrangements are arranged on the substrate plate and are provided with separate inputs and outputs. 4. Sekundärelektronenvervielfacher und Vielfachanordnung (Array) nach Anspruch 1 bis 3, dadurch gekennzeichnet, daß die die Dynoden tragende Substratplatte mit einer zweiten isolierenden Platte abgedeckt ist.4. secondary electron multiplier and array (array) according to claim 1 to 3, characterized in that the substrate plate carrying the dynodes is covered with a second insulating plate. 5. Sekundärelektronenvervielfacher und Vielfachanordnung (Array) nach Anspruch 4, dadurch gekennzeichnet, daß eine von beiden oder beide Platten Leiterbahnen tragen, die zur vertikalen Fokussierung der Elektronen dienen.5. secondary electron multiplier and multiple arrangement (array) according to claim 4, characterized in that one of both or both plates carry conductor tracks which serve for vertical focusing of the electrons. 6.Sekundärelektronenvervielfacher und Vielfachanordnung (Array) nach Anspruch 4, dadurch gekennzeichnet, daß ein Teil der Dynoden auf der einen Substratplatte und der andere Teil auf der anderen angebracht ist.6.Secondary electron multiplier and array (array) according to claim 4, characterized in that a part of the dynodes is mounted on one substrate plate and the other part on the other. 7. Vielfachanordnung nach Anspruch 3 bis Anspruch 6, dadurch gekennzeichnet, daß die gedachte Verbindungslinie der Signaleingänge eine in weiten Grenzen beliebig gekrümmte Kurve ist.7. Multiple arrangement according to claim 3 to claim 6, characterized in that the imaginary connecting line of the signal inputs is an arbitrarily curved curve within wide limits. 8. Sekundärelektronenvervielfacher und Vielfachanordnung (Array) nach Anspruch 4 bis Anspruch 7, dadurch gekenn­zeichnet, daß zwischen den Platten eine Wand, die an geeigneten Stellen lichtdurchlässig und mit Photokathoden versehen ist, angebracht wird, so daß eine vakuumdichte Umhüllung der Dynodenanordnung entsteht.8. secondary electron multiplier and array (array) according to claim 4 to claim 7, characterized in that between the plates, a wall, which is provided at suitable locations translucent and provided with photocathodes, so that a vacuum-tight envelope of the dynode arrangement is formed. 9. Sekundärelektronenvervielfacher und Vielfachanordnung (Array) nach Anspruch 4 bis Anspruch 8, dadurch gekenn­zeichnet, daß die lichtdurchlässigen Stellen der Wand Linsenform haben und daß die Photokathoden auf einem ge­trennten lichtdurchlässigen Träger angebracht werden, so daß zwischen Lichtquelle und Photokathode eine optische Abbildungsbeziehung besteht.9. secondary electron multiplier and array (array) according to claim 4 to claim 8, characterized in that the translucent locations of the wall have a lens shape and that the photocathodes are mounted on a separate translucent support, so that there is an optical imaging relationship between the light source and photocathode. 10. Vielfachanordnung (Array) nach Anspruch 3 bis Anspruch 9, dadurch gekennzeichnet, daß benachbarte Kanäle gemeinsame Dynoden haben.10. Multiple arrangement (array) according to claim 3 to claim 9, characterized in that adjacent channels have common dynodes. 11. Sekundärelektronenvervielfacher und Vielfachanordnung (Array) nach Anspruch 1 bis Anspruch 10, dadurch gekenn­zeichnet, daß von außen eine Magnetfeld zur Führung der Elektronen aufgebracht wird.11. secondary electron multiplier and multiple arrangement (array) according to claim 1 to claim 10, characterized in that a magnetic field is applied from the outside for guiding the electrons. 12. Vielfachanordnung nach Anspruch 3 bis Anspruch 11, dadurch gekennzeichnet, daß Gruppen von Dynoden an verschiedene Spannungsversorgungen angeschlossen werden.12. Multiple arrangement according to claim 3 to claim 11, characterized in that groups of dynodes are connected to different power supplies. 13. Verfahren zur Herstellung von Mikro-Sekundärelektronenver­vielfachern und Vielfachanordnungen (Arrays) mit diskreten Dynoden nach Anspruch 1 bis Anspruch 12, gekennzeichnet durch folgende Fertigungsschritte: a) Aufbringen von Leiterbahnen auf ein isolierendes Substrat, b) Erzeugen von Dynoden auf den Leiterbahnen auf röntgen­tiefenlithographischem, auf röntgentiefenlithogra­phisch-galvanoplastischem oder auf hiervon abgeleitetem abformtechnischem bzw. abformtechnisch-galvanoplasti­schem Wege, c) falls erforderlich, Verbinden einer Deckplatte mit den Dynoden, oder Anbringen einer lichtdurchlässigen Wand mit Photokathoden und Abschließen mit einer Deckelplatte. 13. A method for producing micro-secondary electron multipliers and multiple arrangements (arrays) with discrete dynodes according to claim 1 to claim 12, characterized by the following manufacturing steps: a) applying conductor tracks to an insulating substrate, b) generation of dynodes on the conductor tracks by means of X-ray depth lithography, on X-ray depth lithography-galvanoplastic or by means of impression technology or impression technology-galvanoplastic methods, c) if necessary, connecting a cover plate to the dynodes, or attaching a translucent wall with photocathodes and finishing with a cover plate. 14. Verfahren nach Anspruch 13, dadurch gekennzeichnet, daß nach Schritt b) auf die Dynoden eine zusätzliche Schicht aus einem Material mit hohem Sekundärelektronen-Koeffi­zienten aufgebracht wird.14. The method according to claim 13, characterized in that after step b) an additional layer of a material having a high secondary electron coefficient is applied to the dynodes. 15. Verfahren nach Anspruch 14, dadurch gekennzeichnet, daß auf die Dynoden galvanisch Zinn aufgebracht und an­schließend naßchemisch oxidiert wird.15. The method according to claim 14, characterized in that tin is electroplated onto the dynodes and then oxidized by wet chemical means. 16. Verfahren nach Anspruch 13, dadurch gekennzeichnet, daß die isolierenden Bereiche zwischen den Leiterbahnen durch Aufbringen einer geeigneten Oberflächenschicht schwach leitend gemacht werden.16. The method according to claim 13, characterized in that the insulating regions between the conductor tracks are made weakly conductive by applying a suitable surface layer.
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DE3709298C2 (en) 1990-02-08
EP0283773A3 (en) 1990-02-07
JPS63279553A (en) 1988-11-16
ATE76537T1 (en) 1992-06-15
DE3709298A1 (en) 1988-09-29
US4990827A (en) 1991-02-05
EP0283773B1 (en) 1992-05-20

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