EP0258098B1 - Encapsulated semiconductor device and method of producing the same - Google Patents

Encapsulated semiconductor device and method of producing the same Download PDF

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Publication number
EP0258098B1
EP0258098B1 EP87401745A EP87401745A EP0258098B1 EP 0258098 B1 EP0258098 B1 EP 0258098B1 EP 87401745 A EP87401745 A EP 87401745A EP 87401745 A EP87401745 A EP 87401745A EP 0258098 B1 EP0258098 B1 EP 0258098B1
Authority
EP
European Patent Office
Prior art keywords
stage
resin package
semiconductor device
portions
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP87401745A
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German (de)
French (fr)
Other versions
EP0258098A1 (en
Inventor
Toshimi Kawahara
Michio Sono
Hiroaki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
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Publication of EP0258098A1 publication Critical patent/EP0258098A1/en
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Publication of EP0258098B1 publication Critical patent/EP0258098B1/en
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention generally relates to semiconductor devices and methods of producing semiconductor devices, and more particularly to a semiconductor device in which a semiconductor element is sealed by a resin package and a method of producing such a semiconductor device.
  • a conventional semiconductor device comprises a stage, a semiconductor element mounted on the stage, a pair of stage bars extending from both sides of the stage for supporting the stage during the production process, leads, wires connecting terminals of the semiconductor element with the corresponding leads, and a generally flat parallelepiped resin package for sealing the semiconductor element and its surrounding parts.
  • the pair of stage bars extend up to respective side surfaces of the resin package.
  • free tip ends of the stage bars are exposed at the respective side surfaces of the resin package.
  • the stage bars are essential to support the stage during the production process, and the excess length of the stage bars are cut along the side surfaces of the resin package only during one of the final production processes.
  • the free tip ends of the stage bars are exposed at the side surfaces of the resin package, external moisture can enter the semiconductor device from a gap formed between the resin package and the free tip ends of the stage bars. This moisture will enter inside the semiconductor device along the stage bars and will eventually reach the semiconductor element because the stage bars are connected to the stage which is mounted with the semiconductor element. When the moisture reaches the semiconductor element, the operation characteristic of the semiconductor device becomes deteriorated and causes breakdown of the semiconductor device.
  • stage bars are essential in supporting the stage during the production process, there are problems in that the stage bars of the completed semiconductor device lead the external moisture to the semiconductor element and the conventional semiconductor device is insufficiently sealed against moisture.
  • stage bars are cut during the production process so that the free tip ends of the stage bars do not extend up to the side surfaces of the resin package.
  • a frame-shaped adhesive tape is adhered on the leads and the stage bars before the free tip ends of the stage bars are cut, so as to provide a support for the stage during the remaining production processes.
  • an adhesive tape is adhered on each stage bar and the leads adjacent thereto before the free tip ends of the stage bars are cut, so as to provide a support for the stage during the remaining production processes.
  • the adhesive tape remains inside the resin package of the completed semiconductor device.
  • the moisture is prevented from reaching the semiconductor element directly because the leads are not connected to the stage, but the moisture will advance along a gap formed between the lead and the adhesive tape adhered thereon due to the poor adhesion therebetween.
  • the free tip ends of the stage bars exposed at the side surfaces of the resin package are covered by a suitable material so as to prevent the external moisture from entering the semiconductor device from the side surfaces of the resin package where the free tip ends of the stage bars are exposed.
  • a suitable material that would satisfactorily adhere on the side surfaces of the resin package and provide a satisfactory seal.
  • the material covers only portions of the side surfaces of the resin package where the free tip ends of the stage bars are exposed, the sealing provided thereby against the external moisture is incomplete.
  • the present invention provides a semiconductor device as defined in Claim 1.
  • the external moisture is positively prevented from reaching a semiconductor element of the semiconductor device.
  • the stage bars are completely isolated from leads of the semiconductor device, the external moisture entering from a gap formed between the lead and the outer resin package is positively prevented from reaching the semiconductor element.
  • the semiconductor device which is sealed against external moisture by simple steps.
  • the inner resin package portion a material which would not disturb or damage the wires as the material is injected during the molding of the inner resin package portion, because the materials used for the inner and outer resin package portions need not necessarily be the same.
  • FIGS.1A and 1B a description will be given on an example of the conventional semiconductor device by referring to FIGS.1A and 1B, so as to facilitate the understanding of the problems of the conventional semiconductor device.
  • a conventional semiconductor device comprises a semiconductor element 1 which is mounted on the stage 2, a pair of stage bars 3 and 4 extending from both sides of the stage 2 for supporting the stage 2 during the production process, leads 5, wires 6 connecting terminals of the semiconductor element 1 with the corresponding leads 5, and a generally flat parallelepiped resin package 7 for sealing the semiconductor element 1 and its surrounding parts.
  • the pair of stage bars 3 and 4 extend up to respective side surfaces of the resin package 7.
  • free tip ends 3a and 4a of the stage bars 3 and 4 are exposed at the respective side surfaces of the resin package 7.
  • the stage bars 3 and 4 are essential to support the stage 2 during the production process, and the excess length of the stage bars 3 and 4 is cut along the side surfaces of the resin package 7 only during one of the final production processes.
  • the free tip ends 3a and 4a of the stage bars 3 and 4 are exposed at the side surfaces of the resin package 7, external moisture can enter the semiconductor device from a gap formed between the resin package 7 and the free tip ends 3a and 4a of the stage bars 3 and 4.
  • This moisture will enter inside the semiconductor device along the stage bars 3 and 4 as respectively indicated by arrows A and B, and will eventually reach the semiconductor element 1 because the stage bars 3 and 4 are connected to the stage 2 which is mounted with the semiconductor element 1.
  • the operation characteristic of the semiconductor device becomes deteriorated and causes breakdown of the semiconductor device.
  • stage bars 3 and 4 are essential in supporting the stage 2 during the production process, there are problems in that the stage bars 3 and 4 of the completed semiconductor device lead the external moisture to the semiconductor element 1 and the conventional semiconductor device is insufficiently sealed against moisture.
  • FIGS.2A through 2C Next, a description will be given on a first embodiment of the semiconductor device according to the present invention by referring to FIGS.2A through 2C.
  • a semiconductor device 10 comprises a semiconductor element 11 which is mounted on a stage 12, leads 13, wires 14 connecting terminals of the semiconductor element 11 with the corresponding leads 13, a pair of stage bars 15 and 16 extending from both sides of the stage 12 for supporting the stage 12 during the production process, and a generally flat parallelepiped resin package 17 for sealing the semiconductor device 10.
  • the resin package 17 comprises an inner resin package portion 18 and an outer resin package portion 19.
  • the inner resin package portion 18 seals the semiconductor element 11 and its surrounding parts including portions of the stage 12, leads 13, the wires 14 and the stage bars 15 and 16.
  • the outer resin package portion 19 seals the inner resin package portion 18 and the remaining portions of the semiconductor device 10 not sealed by the inner resin package portion 18.
  • the stage bars 15 and 16 do not extend up to respective side surfaces 17a and 17b of the resin package 17. In other words, free tip ends 15a and 16a of the stage bars 15 and 16 end inside the resin package 17. Therefore, the free tip ends 15a and 16a of the stage bars 15 and 16 are completely covered by the resin package 17 and the semiconductor device 10 is satisfactorily sealed against external moisture.
  • the external moisture may enter from a gap formed between the resin package 17 and one of the leads 13, but the leads 13 are not connected to the stage 12.
  • the moisture entering along the leads 13 may reach the semiconductor element 11 along the wires 14, however, the moisture reaching the semiconductor element 11 along the wires 14 is negligible compared to the moisture reaching the semiconductor element 11 along the stage bars 15 and 16 which are connected to the stage 12. In other words, because the leads 13 are isolated from the stage bars 15 and 16, the moisture entering along the leads 13 will not reach the semiconductor element 11 along the stage bars 15 and 16.
  • FIGS.3A, 3B, 3C, 4A, 4B, 5, 6A and 6B those parts which are the same as those corresponding parts in FIGS.2A through 2C are designated by the same reference numerals.
  • FIG.3A shows a cross section along a line IIIA-IIIA in FIG.3C
  • FIG.3B shows a cross section along a line IIIB-IIIB in FIG.3C
  • a lead frame 20 integrally comprises the leads 13 which extend from frames 37 and 38 and a pair of stage bars 26 and 27 which support the stage 12 between frames 28 and 29 which constitute the lead frame 20 together with the frames 37 and 38.
  • the semiconductor element 11 is mounted on the stage 12, and the wires 14 are then provided to connect the terminals of the semiconductor element 11 to the corresponding leads 13.
  • the lead frame 20 is sandwiched between upper and lower molds 21 and 22 as shown in FIGS.3A and 3B.
  • the lower mold 22 has a runner 24 for supplying a first resin which constitutes the inner resin package portion 18 described before.
  • the first resin from the runner 24 flows through a passage 39, a flat cavity 23 and a passage 40.
  • the air is led out through a hole 40a. It is desirable that the flow of the first resin at the semiconductor element 11 is small so as not to damage the wires 14 and the semiconductor element 11. But on the other hand, it is desirable that the injected first resin properly fills the cavity 23. In the present embodiment, both of these conditions are satisfied because of the rounded shape of the cavity 23 and the passage 39 which supplies the first resin to the cavity 23 and the passage 40 which leads the air out of the molds 21 and 22 through the hole 40a.
  • thermosetting resin is used for the first resin, for example.
  • FIGS.4A and 4B show a semi-completed semiconductor device 30 which is obtained by the first molding process
  • FIG.4B shows the front view viewed in a direction C in FIG.4A with the illustration of the frame 38 and the leads 13 omitted.
  • the inner resin package portion 18 seals the semiconductor element 11, the stage 12, the wires 14, base portions of the stage bars 26 and 27 in the vicinity of the stage 12, and portions of the leads 13 in the vicinity of the semiconductor element 11.
  • portions of the stage bars 26 and 27 in the vicinity of the frames 28 and 29 are respectively cut off as shown in FIG.5, and a semi-completed semiconductor device 31 is obtained. Even when these portions of the stage bars 26 and 27 are cut off, the stage 12 is still supported satisfactorily by the inner resin package portion 18 which supports the stage 12 via the leads 13 and the remaining stage bars 15 and 16.
  • the outer resin package portion 19 is formed by a second molding process.
  • the semi-completed semiconductor device 31 is sandwiched between the upper and lower molds 32 and 33 as shown in FIG.6A, and a second resin is injected into a generally flat parallelepiped flat cavity 34 from a runner 35 through a connecting gate portion 36. Then, the unwanted portions of the lead frame 20 and the like are cut off and removed.
  • a thermosetting resin is used for the second resin, and as will be described later, the second resin may either be the same as or different from the first resin.
  • the cavity 34 is shaped so that the second resin covers the inner resin package portions 18 and the remaining portions of the semi-completed semiconductor device 31 which are not sealed by the inner resin package portion 18.
  • the outer resin package portion 19 indicated by a two-dot chain line in FIG.6B is formed when the second resin hardens.
  • the inner and outer resin package portions 18 and 19 constitute the resin package 17.
  • the same resin in used for the first and second resins it is possible to use an epoxy resin heavily admixed with a filler to 75 to 90 weight percent, where the filler is silica powder having a coefficient of thermal expansion smaller than that of the epoxy resin itself, for example.
  • the epoxy resin is heavily admixed with the silica powder, the coefficient of thermal expansion thereof becomes extremely close to the coefficient of thermal expansion of the semiconductor element 11.
  • This epoxy resin heavily admixed with the silica powder thus has a characteristic superior to that compared to the conventionally used resin from the point of view of thermal stress, and the sealing effect of the resin package 17 is superior compared to the resin package constituted by the conventional resin due to the high moisture resistance thereof.
  • the inner resin package portion 18 can be formed without damaging the wires 14 because the cavity 23 is a small space surrounded by rounded surfaces as described before.
  • first and second resins are silicon resin, polyimide resin as a thermosetting resin or polyphenylene sulphide (PPS) resin, liquid crystal polymer (LCP) resin as a thermoplastic resin with a filler such as silica, silicon nitride, or alumina, 0 to 90 weight percent.
  • PPS polyphenylene sulphide
  • LCP liquid crystal polymer
  • thermosetting resin which has a low thermal stress so as to positively prevent undesirable effects on the semiconductor element 11 and its surroundings during the first molding process
  • thermosetting resin used for the second resin may have a poor flow rate since the semiconductor element 11, the wires 14 and the like are already sealed and protected by the inner resin package portion 18 when the outer resin package portion 19 is molded during the second molding process, and the selection of the resin which constitutes the resin package (that is, the outer resin package 19) is facilitated.
  • a soft material for the first resin by placing emphasis on the prevention of damage to the wires 14 and the semiconductor element 11, and use another material for the second resin by placing emphasis on the moisture resistance.
  • the first resin is the thermosplastic resin and the second resin is the thermosetting resin.
  • the outer resin is the thermosetting resin, the package itself is heat-resistant in a solder mounting process on a printed circuit board.
  • FIGS.7A and 7B those parts which are the same as those corresponding parts in FIGS.2A through 2C are designated by the same reference numerals, and a description thereof will be omitted.
  • a semiconductor device 45 shown in FIGS.7A and 7B intermediate portions of the stage bars 26 and 27 are cut off and removed during the production process. As a result, only stage bar portions 41-1 and 42-1 remain connected to the stage 12, and stage bar portions 41-2 and 42-2 remain near the respective side surfaces of the resin package 17. Tip ends 41-1a and 42-1a of the stage bar portions 41-1 and 42-1 are located inside the outer resin package portion 19.
  • Outer tip ends 41-2a and 42-2a of the stage bar portions 41-2 and 42-2 are exposed at the side surfaces of the resin package 17, but inner ends 41-2b and 42-2b of the stage bar portions 41-2 and 42-2 are completely isolated from the tip ends 41-1a and 42-1a of the stage bar portions 41-1 and 42-1 by the outer resin package portion 19.
  • an inner resin package portion 18A is formed by use of suitable upper and lower molds (not shown) having passages which run along both sides of the stage bars 26 and 27. Otherwise, the production processes are the same as those of the first embodiment of the method described before. According to the present embodiment, the support of the stage 12 is stable when the stage bars 26 and 27 are cut.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

    BACKGROUND OF THE INVENTION
  • The present invention generally relates to semiconductor devices and methods of producing semiconductor devices, and more particularly to a semiconductor device in which a semiconductor element is sealed by a resin package and a method of producing such a semiconductor device.
  • As will be described later in conjunction with drawings, a conventional semiconductor device comprises a stage, a semiconductor element mounted on the stage, a pair of stage bars extending from both sides of the stage for supporting the stage during the production process, leads, wires connecting terminals of the semiconductor element with the corresponding leads, and a generally flat parallelepiped resin package for sealing the semiconductor element and its surrounding parts.
  • The pair of stage bars extend up to respective side surfaces of the resin package. In other words, free tip ends of the stage bars are exposed at the respective side surfaces of the resin package. This is because the stage bars are essential to support the stage during the production process, and the excess length of the stage bars are cut along the side surfaces of the resin package only during one of the final production processes. However, since the free tip ends of the stage bars are exposed at the side surfaces of the resin package, external moisture can enter the semiconductor device from a gap formed between the resin package and the free tip ends of the stage bars. This moisture will enter inside the semiconductor device along the stage bars and will eventually reach the semiconductor element because the stage bars are connected to the stage which is mounted with the semiconductor element. When the moisture reaches the semiconductor element, the operation characteristic of the semiconductor device becomes deteriorated and causes breakdown of the semiconductor device.
  • Therefore, although the stage bars are essential in supporting the stage during the production process, there are problems in that the stage bars of the completed semiconductor device lead the external moisture to the semiconductor element and the conventional semiconductor device is insufficiently sealed against moisture.
  • Accordingly, various semiconductor devices have been proposed in which the stage bars are cut during the production process so that the free tip ends of the stage bars do not extend up to the side surfaces of the resin package. For example, in the semiconductor device proposed in a Japanese Laid-Open Patent Application No.58-161349, a frame-shaped adhesive tape is adhered on the leads and the stage bars before the free tip ends of the stage bars are cut, so as to provide a support for the stage during the remaining production processes. In the semiconductor devices proposed in Japanese Laid-Open Patent Applications No.58-191457 and No.60-46058(corresponding to Patent Abstracts of Japan, vol.9, no. 173(E-329)[1896], 18th July 1985), an adhesive tape is adhered on each stage bar and the leads adjacent thereto before the free tip ends of the stage bars are cut, so as to provide a support for the stage during the remaining production processes.
  • Since the tip ends of the stage bars are not exposed at the side surfaces of the resin package, there is no possibility of the external moisture entering the semiconductor device from the side surfaces of the resin package. However, according to these previously proposed semiconductor devices using the adhesive tape, the adhesive tape remains inside the resin package of the completed semiconductor device. Generally, it is extremely difficult to obtain a satisfactory adhesion between the adhesive tape and the stage bars and the leads. For this reason, when the moisture enters from a gap formed between one of the leads and the resin package, the moisture is prevented from reaching the semiconductor element directly because the leads are not connected to the stage, but the moisture will advance along a gap formed between the lead and the adhesive tape adhered thereon due to the poor adhesion therebetween. The moisture advancing along the gap between the lead and the adhesive tape will then reach a gap between the stage bar and the adhesive tape adhered thereon. As a result, the moisture will eventually reach the semiconductor element by way of the stage bar. Therefore, these previously proposed semiconductor devices are also insufficiently sealed against moisture.
  • On the other hand, in another semiconductor device proposed in a Japanese Laid-Open Patent Application No.58-197864, the free tip ends of the stage bars exposed at the side surfaces of the resin package are covered by a suitable material so as to prevent the external moisture from entering the semiconductor device from the side surfaces of the resin package where the free tip ends of the stage bars are exposed. However, it is difficult to find a suitable material that would satisfactorily adhere on the side surfaces of the resin package and provide a satisfactory seal. Furthermore, since the material covers only portions of the side surfaces of the resin package where the free tip ends of the stage bars are exposed, the sealing provided thereby against the external moisture is incomplete.
    • SUMMARY OF THE INVENTION
  • Accordingly, it is a general object of the present invention to provide a novel and useful semiconductor device and method of producing semiconductor device in which the problems described heretofore are eliminated.
  • Accordingly the present invention provides a semiconductor device as defined in Claim 1. According to the semiconductor device of the present invention, the external moisture is positively prevented from reaching a semiconductor element of the semiconductor device. In addition, since the stage bars are completely isolated from leads of the semiconductor device, the external moisture entering from a gap formed between the lead and the outer resin package is positively prevented from reaching the semiconductor element.
  • According to the present invention there is further provided a method of producing a semiconductor device as defined in Claim 8.
  • According to the method of the present invention, it is possible to produce the semiconductor device which is sealed against external moisture by simple steps. In addition, it is possible to use for the inner resin package portion a material which would not disturb or damage the wires as the material is injected during the molding of the inner resin package portion, because the materials used for the inner and outer resin package portions need not necessarily be the same.
  • Other objects and further features of the present invention will be apparent from the following detailed description when read in conjunction with the accompanying drawings.
    • BRIEF DESCRIPTION OF THE DRAWINGS
    • FIG.1A is a plan view showing an example of the conventional semiconductor device;
    • FIG.1B is a cross sectional view of the conventional semiconductor device along a line IB-IB in FIG.1A;
    • FIG.2A is a plan view showing a first embodiment of the semiconductor device according to the present invention;
    • FIGS.2B and 2C are cross sectional views of the first embodiment of the semiconductor device along lines IIB-IIB and IIC-IIC in FIG.2A, respectively;
    • FIGS.3A through 3C are cross sectional views and a plan view, FIGS.4A and 4B are a plan view and a front view, FIG.5 is a plan view, and FIGS.6A and 6B are a cross sectional view and a plan view for explaining a first embodiment of the method of producing the semiconductor device according to the present invention, respectively;
    • FIG.7A is a plan view showing a second embodiment of the semiconductor device according to the present invention;
    • FIG.7B is a cross sectional view showing the second embodiment of the semiconductor device along a line VIIB-VIIB in FIG.7A; and
    • FIG.8 is a plan view for explaining an essential part of a second embodiment of the method of producing the semiconductor device according to the present invention.
    DETAILED DESCRIPTION
  • First, a description will be given on an example of the conventional semiconductor device by referring to FIGS.1A and 1B, so as to facilitate the understanding of the problems of the conventional semiconductor device.
  • In FIGS.1A and 1B, a conventional semiconductor device comprises a semiconductor element 1 which is mounted on the stage 2, a pair of stage bars 3 and 4 extending from both sides of the stage 2 for supporting the stage 2 during the production process, leads 5, wires 6 connecting terminals of the semiconductor element 1 with the corresponding leads 5, and a generally flat parallelepiped resin package 7 for sealing the semiconductor element 1 and its surrounding parts.
  • The pair of stage bars 3 and 4 extend up to respective side surfaces of the resin package 7. In other words, free tip ends 3a and 4a of the stage bars 3 and 4 are exposed at the respective side surfaces of the resin package 7. This is because the stage bars 3 and 4 are essential to support the stage 2 during the production process, and the excess length of the stage bars 3 and 4 is cut along the side surfaces of the resin package 7 only during one of the final production processes. However, since the free tip ends 3a and 4a of the stage bars 3 and 4 are exposed at the side surfaces of the resin package 7, external moisture can enter the semiconductor device from a gap formed between the resin package 7 and the free tip ends 3a and 4a of the stage bars 3 and 4. This moisture will enter inside the semiconductor device along the stage bars 3 and 4 as respectively indicated by arrows A and B, and will eventually reach the semiconductor element 1 because the stage bars 3 and 4 are connected to the stage 2 which is mounted with the semiconductor element 1. When the moisture reaches the semiconductor element 1, the operation characteristic of the semiconductor device becomes deteriorated and causes breakdown of the semiconductor device.
  • Therefore, although the stage bars 3 and 4 are essential in supporting the stage 2 during the production process, there are problems in that the stage bars 3 and 4 of the completed semiconductor device lead the external moisture to the semiconductor element 1 and the conventional semiconductor device is insufficiently sealed against moisture.
  • Next, a description will be given on a first embodiment of the semiconductor device according to the present invention by referring to FIGS.2A through 2C.
  • In FIGS.2A through 2C, a semiconductor device 10 comprises a semiconductor element 11 which is mounted on a stage 12, leads 13, wires 14 connecting terminals of the semiconductor element 11 with the corresponding leads 13, a pair of stage bars 15 and 16 extending from both sides of the stage 12 for supporting the stage 12 during the production process, and a generally flat parallelepiped resin package 17 for sealing the semiconductor device 10. The resin package 17 comprises an inner resin package portion 18 and an outer resin package portion 19. The inner resin package portion 18 seals the semiconductor element 11 and its surrounding parts including portions of the stage 12, leads 13, the wires 14 and the stage bars 15 and 16. On the other hand, the outer resin package portion 19 seals the inner resin package portion 18 and the remaining portions of the semiconductor device 10 not sealed by the inner resin package portion 18.
  • The stage bars 15 and 16 do not extend up to respective side surfaces 17a and 17b of the resin package 17. In other words, free tip ends 15a and 16a of the stage bars 15 and 16 end inside the resin package 17. Therefore, the free tip ends 15a and 16a of the stage bars 15 and 16 are completely covered by the resin package 17 and the semiconductor device 10 is satisfactorily sealed against external moisture. The external moisture may enter from a gap formed between the resin package 17 and one of the leads 13, but the leads 13 are not connected to the stage 12. The moisture entering along the leads 13 may reach the semiconductor element 11 along the wires 14, however, the moisture reaching the semiconductor element 11 along the wires 14 is negligible compared to the moisture reaching the semiconductor element 11 along the stage bars 15 and 16 which are connected to the stage 12. In other words, because the leads 13 are isolated from the stage bars 15 and 16, the moisture entering along the leads 13 will not reach the semiconductor element 11 along the stage bars 15 and 16.
  • Next, a description will be given on a first embodiment of the method of producing the semiconductor device according to the present invention, by referring to FIGS.3A, 3B, 3C, 4A, 4B, 5, 6A and 6B. In FIGS.3A through 6B, those parts which are the same as those corresponding parts in FIGS.2A through 2C are designated by the same reference numerals.
  • FIG.3A shows a cross section along a line IIIA-IIIA in FIG.3C, and FIG.3B shows a cross section along a line IIIB-IIIB in FIG.3C. In FIGS.3A through 3C, a lead frame 20 integrally comprises the leads 13 which extend from frames 37 and 38 and a pair of stage bars 26 and 27 which support the stage 12 between frames 28 and 29 which constitute the lead frame 20 together with the frames 37 and 38. The semiconductor element 11 is mounted on the stage 12, and the wires 14 are then provided to connect the terminals of the semiconductor element 11 to the corresponding leads 13. In this state, the lead frame 20 is sandwiched between upper and lower molds 21 and 22 as shown in FIGS.3A and 3B. The lower mold 22 has a runner 24 for supplying a first resin which constitutes the inner resin package portion 18 described before.
  • During a first molding process, the first resin from the runner 24 flows through a passage 39, a flat cavity 23 and a passage 40. The air is led out through a hole 40a. It is desirable that the flow of the first resin at the semiconductor element 11 is small so as not to damage the wires 14 and the semiconductor element 11. But on the other hand, it is desirable that the injected first resin properly fills the cavity 23. In the present embodiment, both of these conditions are satisfied because of the rounded shape of the cavity 23 and the passage 39 which supplies the first resin to the cavity 23 and the passage 40 which leads the air out of the molds 21 and 22 through the hole 40a. Since the first resin can freely flow between the leads 13 and the stage bar 26 or 27, both the top and bottom of the semiconductor element 11 and its surrounding parts are sealed by the inner resin package portion 18 when the first resin hardens as shown in FIGS.4A and 4B. As shown in FIG.3C, a connecting gate portion between the runner 24 and the passage 39 is narrowed at the frame 28 so as to facilitate the cutting of the first resin at a later stage of the process, but it is not essential that the connecting gate portion is narrowed. In order to prevent damage to the semiconductor device especially to the wires 14, a thermosetting resin is used for the first resin, for example.
  • FIGS.4A and 4B show a semi-completed semiconductor device 30 which is obtained by the first molding process, and FIG.4B shows the front view viewed in a direction C in FIG.4A with the illustration of the frame 38 and the leads 13 omitted. As shown, the inner resin package portion 18 seals the semiconductor element 11, the stage 12, the wires 14, base portions of the stage bars 26 and 27 in the vicinity of the stage 12, and portions of the leads 13 in the vicinity of the semiconductor element 11.
  • Next, portions of the stage bars 26 and 27 in the vicinity of the frames 28 and 29 are respectively cut off as shown in FIG.5, and a semi-completed semiconductor device 31 is obtained. Even when these portions of the stage bars 26 and 27 are cut off, the stage 12 is still supported satisfactorily by the inner resin package portion 18 which supports the stage 12 via the leads 13 and the remaining stage bars 15 and 16.
  • Thereafter, the outer resin package portion 19 is formed by a second molding process. The semi-completed semiconductor device 31 is sandwiched between the upper and lower molds 32 and 33 as shown in FIG.6A, and a second resin is injected into a generally flat parallelepiped flat cavity 34 from a runner 35 through a connecting gate portion 36. Then, the unwanted portions of the lead frame 20 and the like are cut off and removed. For example, a thermosetting resin is used for the second resin, and as will be described later, the second resin may either be the same as or different from the first resin.
  • The cavity 34 is shaped so that the second resin covers the inner resin package portions 18 and the remaining portions of the semi-completed semiconductor device 31 which are not sealed by the inner resin package portion 18. As a result, the outer resin package portion 19 indicated by a two-dot chain line in FIG.6B is formed when the second resin hardens. The inner and outer resin package portions 18 and 19 constitute the resin package 17.
  • For example, in the case where the same resin in used for the first and second resins, it is possible to use an epoxy resin heavily admixed with a filler to 75 to 90 weight percent, where the filler is silica powder having a coefficient of thermal expansion smaller than that of the epoxy resin itself, for example. When the epoxy resin is heavily admixed with the silica powder, the coefficient of thermal expansion thereof becomes extremely close to the coefficient of thermal expansion of the semiconductor element 11. This epoxy resin heavily admixed with the silica powder thus has a characteristic superior to that compared to the conventionally used resin from the point of view of thermal stress, and the sealing effect of the resin package 17 is superior compared to the resin package constituted by the conventional resin due to the high moisture resistance thereof. When the epoxy resin is heavily admixed with the silica powder, the flow property becomes poor and is unsuited for molding, but the inner resin package portion 18 can be formed without damaging the wires 14 because the cavity 23 is a small space surrounded by rounded surfaces as described before.
  • Other possible examples of the first and second resins are silicon resin, polyimide resin as a thermosetting resin or polyphenylene sulphide (PPS) resin, liquid crystal polymer (LCP) resin as a thermoplastic resin with a filler such as silica, silicon nitride, or alumina, 0 to 90 weight percent.
  • However, it is not essential that the same resin is used for the first and second resins. For example, it is possible to use for the first resin a thermosetting resin which has a low thermal stress so as to positively prevent undesirable effects on the semiconductor element 11 and its surroundings during the first molding process, and to use for the second resin a thermosetting resin which has a high moisture resistance. This thermosetting resin used for the second resin may have a poor flow rate since the semiconductor element 11, the wires 14 and the like are already sealed and protected by the inner resin package portion 18 when the outer resin package portion 19 is molded during the second molding process, and the selection of the resin which constitutes the resin package (that is, the outer resin package 19) is facilitated. In other words, it is possible to use a soft material for the first resin by placing emphasis on the prevention of damage to the wires 14 and the semiconductor element 11, and use another material for the second resin by placing emphasis on the moisture resistance.
  • In another example, the first resin is the thermosplastic resin and the second resin is the thermosetting resin. In this case, since the outer resin is the thermosetting resin, the package itself is heat-resistant in a solder mounting process on a printed circuit board.
  • Next, a description will be given on a second embodiment of the semiconductor device according to the present invention, by referring to FIGS.7A and 7B. In FIGS.7A and 7B, those parts which are the same as those corresponding parts in FIGS.2A through 2C are designated by the same reference numerals, and a description thereof will be omitted. In a semiconductor device 45 shown in FIGS.7A and 7B, intermediate portions of the stage bars 26 and 27 are cut off and removed during the production process. As a result, only stage bar portions 41-1 and 42-1 remain connected to the stage 12, and stage bar portions 41-2 and 42-2 remain near the respective side surfaces of the resin package 17. Tip ends 41-1a and 42-1a of the stage bar portions 41-1 and 42-1 are located inside the outer resin package portion 19. Outer tip ends 41-2a and 42-2a of the stage bar portions 41-2 and 42-2 are exposed at the side surfaces of the resin package 17, but inner ends 41-2b and 42-2b of the stage bar portions 41-2 and 42-2 are completely isolated from the tip ends 41-1a and 42-1a of the stage bar portions 41-1 and 42-1 by the outer resin package portion 19.
  • Therefore, even when the external moisture enters from a gap formed between the resin package 17 and the outer tip ends 41-2a and 42-2a of the stage bar portions 41-2 and 42-2 as indicated by arrows A and B in FIG.7B, the moisture is stopped at the inner ends 41-2b and 42-2b of the stage bar portions 41-2 and 42-2. Hence, no moisture will reach the semiconductor element 11 along the remaining stage bar portions 41-1 and 42-1 which are connected to the stage 12, and the semiconductor device 45 is satisfactorily sealed against the external moisture.
  • Next, a description will be given with respect to an essential part of a second embodiment of the method of producing the semiconductor device according to the present invention, by referring to FIG.8. In the present embodiment, an inner resin package portion 18A is formed by use of suitable upper and lower molds (not shown) having passages which run along both sides of the stage bars 26 and 27. Otherwise, the production processes are the same as those of the first embodiment of the method described before. According to the present embodiment, the support of the stage 12 is stable when the stage bars 26 and 27 are cut.

Claims (14)

  1. A semiconductor device comprising:
    a stage (12);
    a semiconductor element (11) mounted on said stage, said semiconductor element having a plurality of terminals;
    stage bars (15,16) extending from said stage, said stage bars having a base end connected to said stage and a free tip end (15a, 16a; 41-1, 42-1);
    a plurality of leads (13);
    a plurality of wires (14) connecting the terminals of said semiconductor element (11) to corresponding ones of said leads (13); and
    a resin package (17) for sealing at least said stage (12), said semiconductor element (11) and said wires (14), characterized in that
    said resin package (17) comprises an inner resin package portion (18) and an outer resin package portion (19),
    said inner resin package portion (18) sealing said stage (12), said semiconductor element (11), said wires (14) and a portion of said stage bars (15,16) and portions of said leads (13) in a vicinity of said stage (12),
    said outer resin package portion (19) sealing said inner resin package portion (18) and portions of the remaining portions of said leads (13),
    said free tip end (15a, 16a; 41-1, 42-1) of said stage bars being located inside said outer resin package portion (19).
  2. A semiconductor device as claimed in claim 1 in which said inner resin package portion (18) comprises a first portion having a generally flat rounded shape, said first portion sealing said stage (12), said semiconductor element (11), said wires (14) and a portion of said stage bars (15, 16) and portions of said leads (13) in the vicinity of said stage.
  3. A semiconductor device as claimed in claim 2 in which said inner resin package portion (18) further comprises at least one second portion extending from said first portion and covering portions of said leads (13), said second portion ending at a side surface of said resin package (17).
  4. A semiconductor device as claimed in any of claims 1 to 3, in which said inner and outer resin package portions (18,19) are made of a thermosetting resin.
  5. A semiconductor device as claimed in any of claims 1 to 4 in which said inner and outer resin package portions (18,19) are made of the same resin.
  6. A semiconductor device as claimed in any of claims 1 to 4 in which said inner and outer resin package portions (18,19) are made of mutually different resins.
  7. A semiconductor device as claimed in any of claims 1 to 4 in which said inner resin package portion (18) is made of a material having a thermal stress against the semiconductor element (11) smaller than that of the material constituting said outer resin package portion (19).
  8. A method of producing a semiconductor device as claimed in Claim 1 comprising the steps of:
    mounting a semiconductor element (11) on a stage (12), said stage (12) being connected to a lead frame (20) via stage bars (26,27), said lead frame (20) having a plurality of leads (13) extending therefrom;
    providing a plurality of wires (14) connecting terminals of said semiconductor element (11) to corresponding ones of said leads (13);
    molding an inner resin package portion (18) over said stage (12), said semiconductor element (11), said wires (14) and a portion of said stage bars (26,27) and portions of said leads (13) in a vicinity of said stage (12);
    cutting at least a portion of said stage bars (26,27) between said inner resin package portion and said lead frame;
    molding an outer resin package portion (19) over said inner resin package portion (18), portions of the remaining portions of said leads (13) and the exposed stage bars (15,16; 41-1, 42-1) from the inner resin package portion (18) so that a free tip end of said stage bars extending from said stage is located inside said outer resin package portion (19);
    and cutting and removing unwanted portions of said lead frame;
  9. A method of producing a semiconductor device as claimed in claim 8 in which said step of molding said inner resin package portion (18) molds a first portion having generally flat rounded shape and sealing said stage (12), said semiconductor element (11), said wires (14), and a portion of said stage bars (26,27) and portions of said leads (13) in the vicinity of said stage, said first portion constituting said inner resin package portion (18).
  10. A method of producing a semiconductor device as claimed in claim 9 in which said step of molding said inner resin package portion (18) simultaneously molds at least one second portion together with said first portion, said second portion being connected to said first portion and covering portions of said leads (13), said second portion constituting said inner resin package portion (18) together with said first portion.
  11. A method of producing a semiconductor device as claimed in any of claims 8 to 10 in which said steps of molding said inner and outer resin package portions (18, 19) use a thermosetting resin.
  12. A method of producing a semiconductor device as claimed in any of claims 8 to 11 in which said steps of molding said inner and outer resin package portions (18,19) use the same resin.
  13. A method of producing a semiconductor device as claimed in any of claims 8 to 11 in which said steps of molding said inner and outer resin package portions (18,19) use mutually different resins.
  14. A method of producing a semiconductor device as claimed in any of claims 8 to 11 in which said steps of molding said inner and outer resin package portions (18,19) use first and second resins, respectively, said first resin having a thermal stress against the semiconductor element (11) smaller than that of said second resin.
EP87401745A 1986-07-25 1987-07-24 Encapsulated semiconductor device and method of producing the same Expired - Lifetime EP0258098B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61174854A JPS6331149A (en) 1986-07-25 1986-07-25 Semiconductor device
JP174854/86 1986-07-25

Publications (2)

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EP0258098A1 EP0258098A1 (en) 1988-03-02
EP0258098B1 true EP0258098B1 (en) 1991-04-17

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US (1) US4788583A (en)
EP (1) EP0258098B1 (en)
JP (1) JPS6331149A (en)
KR (1) KR910002292B1 (en)
DE (1) DE3769400D1 (en)

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Publication number Publication date
KR890003009A (en) 1989-04-12
EP0258098A1 (en) 1988-03-02
JPS6331149A (en) 1988-02-09
KR910002292B1 (en) 1991-04-11
US4788583A (en) 1988-11-29
DE3769400D1 (en) 1991-05-23

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