EP0173545A2 - Crystalline alumina loaded cavity resonator - Google Patents
Crystalline alumina loaded cavity resonator Download PDFInfo
- Publication number
- EP0173545A2 EP0173545A2 EP85305945A EP85305945A EP0173545A2 EP 0173545 A2 EP0173545 A2 EP 0173545A2 EP 85305945 A EP85305945 A EP 85305945A EP 85305945 A EP85305945 A EP 85305945A EP 0173545 A2 EP0173545 A2 EP 0173545A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- crystalline alumina
- resonator
- sapphire
- loaded cavity
- cavity resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 239000010955 niobium Substances 0.000 claims abstract description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000523 sample Substances 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 6
- 239000002887 superconductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 241000579895 Chlorostilbon Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229910052876 emerald Inorganic materials 0.000 description 1
- 239000010976 emerald Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
Definitions
- This invention relates to a crystalline alumina loaded cavity resonator and to a method of making such a resonator.
- the resonators with which the invention is particularly concerned are those which have low losses and high frequency stability such that their frequency may be well-defined and only weakly perturbed by temperature, pressure and mechanical changes in the environment of the resonator, especially when brought to crogenic temperature below 20° KELVIN.
- the resonators also have capability of high power or high electric field operation.
- Low phase noise is achieved by locking an external oscillator to the cavity, and then using the cavity as a high Q transmission filter, and for this application it is important to have the highest possible Q-factor.
- Long, term frequency stability depends primarily on environmental control, since temperature variations and mechanical movement are transformed into frequency variations of the resonant cavity, Chief limitations are the coefficient of thermal expansion of the cavity, temperature dependence of the surface reactance of the superconductor and mechanical deformations due to vibration and due to tilt variations in the presence of the earth's gravitational field.
- this invention provides a crystalline alumina loaded cavity resonator comprising a crystalline alumina dielectric resonator having at least one protrusion whereby it can be rigidly mounted inside a metallic housing such that the main body of the said crystalline alumina dielectric resonator is separated a significant distance from the inside walls of the said housing constituting an electromagnetic cavity.
- a preferred resonator comprises a spindle shaped sapphire dielectric resonator mounted inside and occupying some 25% of the volume of a superconducting niobium cavity.
- Numeral 1 designates a single crystal of alumina of generally cylindrical shape being a sapphire having protrusions 2 and 2' which fit closely in recesses in the base 3 and lid 3' of a niobium housing.
- the lid 3 1 can be clamped by means of the groove 4 (using clamping means not shown) to hold the sapphire rigidly between the lid and the base.
- an indium seal of suitable dimensions is provided whereby on clamping, the indium seals the lid 3' to the side walls 5 at groove 6 in lid 3'.
- One or more microwave probes 7 (schematically shown) are used to couple microwave power into the cavity through one or more holes 8 .
- the hole dimension and the probe position are designed to optimise the coupling to the resonator without degrading its performance.
- the body of the sapphire dielectric resonator is a cylinder 30mm diameter and 30mm long.
- the protrusions 2 and 2' are about 7mm in diameter and 12mm long, and fit into recesses at the ends of the housing which is a 50mm diameter x 50mm long cylindrical niobium cavity.
- the system is designed to have a fundamental TE 011 mode at about 1 GHz, and for the SDR to be spaced about 5 scale lengths of the evanescent field from the cavity walls. This greatly reduces any perturbing effects of the cavity.
- the cylindrical symmetry is also chosen so that transverse and longitudinal vibrations or fluctuations in the position of the SDR relative to the niobium cavity will, to first order, have a null contribution to the frequency of the resonator. This property will occur so long as the particular modes of the SDR have sufficient symmetry. This requires, firstly, that the symmetry axis of the sapphire be chosen to be parallel to the resonator axis, otherwise the anisotropy of the dielectric constant will cause angular distortion of the resonator field leading to incomplete nulling of frequency fluctuations. Secondly, nulling requires that modes with sufficient symmetry are selected.
- the high Q-factor and the decoupling of the microwave energy from the walls allows much higher electric fields to be generated in a sapphire loaded conducting cavity than in other configurations.
- an appropriate mode in the sapphire dielectric resonator and by placing appropriate beam entry holes in the housing in line with a small hole in the dielectric resonator (to allow penetration of a charged particle beam), it is possible to use this resonator as a high efficiency particle accelerator element.
- the preferred substance from which the crystalline alumina dielectric resonator is constructed is a single crystal of sapphire but ruby or emerald may also be used.
- the metallic housing is preferably constructed from niobium although other high conductivity metals such as copper, silver, lead, tin and alloys and mixtures (including intermetallic compounds) may be used.
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Abstract
This invention describes a crystalline alumina loaded cavity resonator which has low loss and high frequency stability such that its frequency is well-defined and only weakly perturbed by temperature, pressure and mechanical changes in its environment. Basically the resonator is a single crystal of sapphire (1) having protusions (2) and (2 min ) fitting closely into recesses in the base (3) and lid (3 min ) of a niobium housing. The lid (3 min ) is clamped by groove (4) and having a indium seal to seal the lid (3 min ) to the side walls (5) at groove (6) in lid (3 min ). A microwave probe (7) is used to couple microwave power into the cavity through hole (8).
Description
- This invention relates to a crystalline alumina loaded cavity resonator and to a method of making such a resonator.
- The resonators with which the invention is particularly concerned are those which have low losses and high frequency stability such that their frequency may be well-defined and only weakly perturbed by temperature, pressure and mechanical changes in the environment of the resonator, especially when brought to crogenic temperature below 20° KELVIN. The resonators also have capability of high power or high electric field operation.
- It is known that dielectric resonators exhibit radiation losses, see for example Richtmeyer R D (1939) J Appl Phys 10, 391-8.
- It has already been shown by Braginsky et al, (1981) IEEE Trans Magn 17, pp 955-957 that the very low loss tangent of sapphire, the low coefficient of thermal expansion and the high Young's modulus, makes a sapphire dielectric resonator (SDR) suitable as an extremely stable frequency standard.
- For cylindrical resonators the high dielectric constant of sapphire (E ≃ 10) enables "whispering gallery" modes to exist, with low radiation losses and consequently high Q-factors as long as the wavelength is sufficiently small compared with the radius of curvature.
- During the past decade several superconducting cavity stabilised oscillator (SCSO) systems have been developed (Stain S R and Turneare J P (1973) Proc 27th Annual Symposium on Frequency Control Washington, DC: Elec Industries Assoc pp 414-20; Jiminez J J and Septier A (1973) Proc 27th Annual Symposium Frequency Control Washington DC: Elec Industries Assoc pp 406-13; Mann A G and Blair D G (1983) J phys D: Appl Phys 16, 105) that have exceptional frequency stability (Stein S R and Turneare J P (1973) Proc 27th Annual $ymposium on Frequency Control Washington DC: Elec Industries Assoc pp 414-20) and exceptionally low phase noise (Mann A G and Blair D G (1983) J Phys D: Appl Phys 16, 105). Low phase noise is achieved by locking an external oscillator to the cavity, and then using the cavity as a high Q transmission filter, and for this application it is important to have the highest possible Q-factor. Long, term frequency stability depends primarily on environmental control, since temperature variations and mechanical movement are transformed into frequency variations of the resonant cavity, Chief limitations are the coefficient of thermal expansion of the cavity, temperature dependence of the surface reactance of the superconductor and mechanical deformations due to vibration and due to tilt variations in the presence of the earth's gravitational field.
- The intrinsic radiation loss from dielectric resonators (Richtmeyer R D (1939) J Appl Phys 10, 391-8) has led to the idea of coating a sapphire resonator with superconductor to obtain a high Q-factor (Strayer D M, Dick G J, Tward E (1983) IEEE Trans Magn 19, 512). Although this is an elegant solution, it does not avoid problems arising from the temperature dependence and the microwave power dependence of the surface reactance (Braginsky V B and Panov V I (1979) IEEE Trans Magn 15, pp 30-32) of the superconductor. The superconductor experiences the full electromagnetic field of the SDR, and power dependent Q-degradation has been observed (Braginsky V G and Panov V 8 (1979) Private Communication). These problems can be avoided by using an uncoated SDR. Braginsky has suggested the use of a large sapphire torus to prevent radiation losses (Braginsky V G, Panov V I, Timashov A V (1982) Sov Phys Doklady 267, 74). However study of a 50mm diameter torus at 10-20 GHz has shown that radiation losses are still a problem with this geometry (Blair D G and Vyatchanin S P (1978) Sov Phys JEIP 47, 433), while the torus is difficult to mount rigidly without introducing field perturbations and losses.
- It is an object of this invention to provide a resonator with frequency stability superior to existing resonators through a system in which the magnitude of all known environmental perturbation are reduced compared with known systems.
- Accordingly, this invention provides a crystalline alumina loaded cavity resonator comprising a crystalline alumina dielectric resonator having at least one protrusion whereby it can be rigidly mounted inside a metallic housing such that the main body of the said crystalline alumina dielectric resonator is separated a significant distance from the inside walls of the said housing constituting an electromagnetic cavity.
- A preferred resonator comprises a spindle shaped sapphire dielectric resonator mounted inside and occupying some 25% of the volume of a superconducting niobium cavity.
- A clearer understanding of this invention will be gained by a consideration of the drawing of a preferred embodiment and the further description of preferred embodiments.
- In the drawing there is shown a vertical section of the resonator of the invention.
- Numeral 1 designates a single crystal of alumina of generally cylindrical shape being a sapphire having protrusions 2 and 2' which fit closely in recesses in the base 3 and lid 3' of a niobium housing. The lid 31 can be clamped by means of the groove 4 (using clamping means not shown) to hold the sapphire rigidly between the lid and the base. To prevent radiation losses, an indium seal of suitable dimensions is provided whereby on clamping, the indium seals the lid 3' to the
side walls 5 at groove 6 in lid 3'. One or more microwave probes 7 (schematically shown) are used to couple microwave power into the cavity through one or more holes 8 . The hole dimension and the probe position are designed to optimise the coupling to the resonator without degrading its performance. - The body of the sapphire dielectric resonator is a cylinder 30mm diameter and 30mm long. The protrusions 2 and 2' are about 7mm in diameter and 12mm long, and fit into recesses at the ends of the housing which is a 50mm diameter x 50mm long cylindrical niobium cavity. The system is designed to have a fundamental TE011 mode at about 1 GHz, and for the SDR to be spaced about 5 scale lengths of the evanescent field from the cavity walls. This greatly reduces any perturbing effects of the cavity.
- The cylindrical symmetry is also chosen so that transverse and longitudinal vibrations or fluctuations in the position of the SDR relative to the niobium cavity will, to first order, have a null contribution to the frequency of the resonator. This property will occur so long as the particular modes of the SDR have sufficient symmetry. This requires, firstly, that the symmetry axis of the sapphire be chosen to be parallel to the resonator axis, otherwise the anisotropy of the dielectric constant will cause angular distortion of the resonator field leading to incomplete nulling of frequency fluctuations. Secondly, nulling requires that modes with sufficient symmetry are selected.
- In a further preferred embodiment the high Q-factor and the decoupling of the microwave energy from the walls allows much higher electric fields to be generated in a sapphire loaded conducting cavity than in other configurations. By using an appropriate mode in the sapphire dielectric resonator, and by placing appropriate beam entry holes in the housing in line with a small hole in the dielectric resonator (to allow penetration of a charged particle beam), it is possible to use this resonator as a high efficiency particle accelerator element.
- The preferred substance from which the crystalline alumina dielectric resonator is constructed is a single crystal of sapphire but ruby or emerald may also be used. The metallic housing is preferably constructed from niobium although other high conductivity metals such as copper, silver, lead, tin and alloys and mixtures (including intermetallic compounds) may be used.
- It is to be noted that this invention is to be given a broad connotation and is not to be limited to the invention specifically described.
Claims (7)
1. A crystalline alumina loaded cavity resonator comprising a crystalline alumina dielectric resonator having at least one protrusion whereby it can be rigidly mounted inside a metallic housing such that the main body of the said crystalline alumina dielectric resonator is separated a significant distance from the inside walls of the said housing constituting an electromagnetic cavity.
2. A crystalline alumina loaded cavity resonator as claimed in claim 1 wherein the crystalline alumina is sapphire.
3. A crystalline alumina loaded cavity resonator as claimed in claim 1 or claim 2 wherein the housing is composed of niobium.
4. A crystalline alumina loaded cavity resonator as claimed in claim 1 wherein the crystalline alumina dielectric resonator is a spindle shaped sapphire dielectric resonator occupying some 25% of the volume of the cavity.
5. A crystalline alumina loaded cavity resonator as claimed in claim 1 of cylindrical shape.
6. A sapphire loaded cavity resonator as claimed in claim 1 of cylindrical shape wherein the crystalline alumina dielectric resonator is a right circular spindle of sapphire supported by end pieces which fit into recesses in end walls of the said metallic homing whereby the sapphire resonator is rigidly mounted.
7. A high efficiency particle acceleration element constituted by a crystalline alumina loaded cavity resonator as claimed in claim 1 further provided with beam entry holes in the housing in line with a hole in the crystalline alumina dielectric resonator to allow penetration of a charged particle beam.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU669284 | 1984-08-21 | ||
| AU6692/84 | 1984-08-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0173545A2 true EP0173545A2 (en) | 1986-03-05 |
| EP0173545A3 EP0173545A3 (en) | 1986-09-10 |
Family
ID=3697271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP85305945A Withdrawn EP0173545A3 (en) | 1984-08-21 | 1985-08-21 | Crystalline alumina loaded cavity resonator |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0173545A3 (en) |
| JP (1) | JPS61112402A (en) |
| DE (1) | DE173545T1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0306090A1 (en) * | 1987-09-04 | 1989-03-08 | Philips Composants | Microwave oscillator with a dielectric resonator stable against mechanical vibrations |
| EP0392417A1 (en) * | 1989-04-13 | 1990-10-17 | Alcatel Espace | Dielectric resonator filter |
| DE4316334A1 (en) * | 1993-05-15 | 1994-11-17 | Forschungsgesellschaft Fuer In | Dielectric resonator |
| WO1997023430A1 (en) * | 1995-12-22 | 1997-07-03 | South Bank University Enterprises Limited | Improved sintered materials |
| DE19824997A1 (en) * | 1998-06-05 | 1999-12-16 | Forschungszentrum Juelich Gmbh | Multipole bandpass filter with elliptical filter characteristics |
| WO2002033780A1 (en) * | 2000-10-20 | 2002-04-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Cavity filter |
| EP2178156A1 (en) * | 2008-10-15 | 2010-04-21 | Com Dev International Limited | Dielectric resonator and filter with low permittivity material |
| CN103716977A (en) * | 2014-01-06 | 2014-04-09 | 中国原子能科学研究院 | High-mechanical-strength high-frequency resonant cavity |
| US11091784B2 (en) | 2014-12-16 | 2021-08-17 | Dsm Ip Assets B.V. | Process for enzymatic hydrolysis of lignocellulosic material and fermentation of sugars |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1284491B (en) * | 1967-06-27 | 1968-12-05 | Telefunken Patent | Cavity resonator and process for its manufacture |
| DE2538614C3 (en) * | 1974-09-06 | 1979-08-02 | Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto (Japan) | Dielectric resonator |
| GB2129228B (en) * | 1982-10-01 | 1986-06-18 | Murata Manufacturing Co | Dielectric resonator |
-
1985
- 1985-08-21 DE DE1985305945 patent/DE173545T1/en active Pending
- 1985-08-21 EP EP85305945A patent/EP0173545A3/en not_active Withdrawn
- 1985-08-21 JP JP18380185A patent/JPS61112402A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0306090A1 (en) * | 1987-09-04 | 1989-03-08 | Philips Composants | Microwave oscillator with a dielectric resonator stable against mechanical vibrations |
| FR2620281A1 (en) * | 1987-09-04 | 1989-03-10 | Radiotechnique Compelec | HYPERFREQUENCE OSCILLATOR WITH DIELECTRIC RESONATOR, STABLE IN RELATION TO MECHANICAL VIBRATION |
| EP0392417A1 (en) * | 1989-04-13 | 1990-10-17 | Alcatel Espace | Dielectric resonator filter |
| FR2646022A1 (en) * | 1989-04-13 | 1990-10-19 | Alcatel Espace | DIELECTRIC RESONATOR FILTER |
| US5027090A (en) * | 1989-04-13 | 1991-06-25 | Alcatel Espace | Filter having a dielectric resonator |
| DE4316334A1 (en) * | 1993-05-15 | 1994-11-17 | Forschungsgesellschaft Fuer In | Dielectric resonator |
| GB2323840B (en) * | 1995-12-22 | 1999-08-25 | South Bank Univ Entpr Ltd | Improved sintered materials |
| GB2323840A (en) * | 1995-12-22 | 1998-10-07 | South Bank Univ Entpr Ltd | Improved sintered materials |
| WO1997023430A1 (en) * | 1995-12-22 | 1997-07-03 | South Bank University Enterprises Limited | Improved sintered materials |
| DE19824997A1 (en) * | 1998-06-05 | 1999-12-16 | Forschungszentrum Juelich Gmbh | Multipole bandpass filter with elliptical filter characteristics |
| DE19824997C2 (en) * | 1998-06-05 | 2003-01-09 | Forschungszentrum Juelich Gmbh | Multipole bandpass filter with elliptical filter characteristics |
| WO2002033780A1 (en) * | 2000-10-20 | 2002-04-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Cavity filter |
| EP2178156A1 (en) * | 2008-10-15 | 2010-04-21 | Com Dev International Limited | Dielectric resonator and filter with low permittivity material |
| EP2315305A1 (en) * | 2008-10-15 | 2011-04-27 | COM DEV International Ltd. | Dielectric resonator and filter with low permittivity material |
| US8031036B2 (en) | 2008-10-15 | 2011-10-04 | Com Dev International Ltd. | Dielectric resonator and filter with low permittivity material |
| US8598970B2 (en) | 2008-10-15 | 2013-12-03 | Com Dev International Ltd. | Dielectric resonator having a mounting flange attached at the bottom end of the resonator for thermal dissipation |
| CN103716977A (en) * | 2014-01-06 | 2014-04-09 | 中国原子能科学研究院 | High-mechanical-strength high-frequency resonant cavity |
| US11091784B2 (en) | 2014-12-16 | 2021-08-17 | Dsm Ip Assets B.V. | Process for enzymatic hydrolysis of lignocellulosic material and fermentation of sugars |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0173545A3 (en) | 1986-09-10 |
| DE173545T1 (en) | 1986-09-25 |
| JPS61112402A (en) | 1986-05-30 |
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