EP0173545A2 - Mit einem Kristallblock aus Aluminiumoxyd belasteter Hohlraumresonator - Google Patents
Mit einem Kristallblock aus Aluminiumoxyd belasteter Hohlraumresonator Download PDFInfo
- Publication number
- EP0173545A2 EP0173545A2 EP85305945A EP85305945A EP0173545A2 EP 0173545 A2 EP0173545 A2 EP 0173545A2 EP 85305945 A EP85305945 A EP 85305945A EP 85305945 A EP85305945 A EP 85305945A EP 0173545 A2 EP0173545 A2 EP 0173545A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- crystalline alumina
- resonator
- sapphire
- loaded cavity
- cavity resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 239000010955 niobium Substances 0.000 claims abstract description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000523 sample Substances 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 6
- 239000002887 superconductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 241000579895 Chlorostilbon Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229910052876 emerald Inorganic materials 0.000 description 1
- 239000010976 emerald Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
Definitions
- This invention relates to a crystalline alumina loaded cavity resonator and to a method of making such a resonator.
- the resonators with which the invention is particularly concerned are those which have low losses and high frequency stability such that their frequency may be well-defined and only weakly perturbed by temperature, pressure and mechanical changes in the environment of the resonator, especially when brought to crogenic temperature below 20° KELVIN.
- the resonators also have capability of high power or high electric field operation.
- Low phase noise is achieved by locking an external oscillator to the cavity, and then using the cavity as a high Q transmission filter, and for this application it is important to have the highest possible Q-factor.
- Long, term frequency stability depends primarily on environmental control, since temperature variations and mechanical movement are transformed into frequency variations of the resonant cavity, Chief limitations are the coefficient of thermal expansion of the cavity, temperature dependence of the surface reactance of the superconductor and mechanical deformations due to vibration and due to tilt variations in the presence of the earth's gravitational field.
- this invention provides a crystalline alumina loaded cavity resonator comprising a crystalline alumina dielectric resonator having at least one protrusion whereby it can be rigidly mounted inside a metallic housing such that the main body of the said crystalline alumina dielectric resonator is separated a significant distance from the inside walls of the said housing constituting an electromagnetic cavity.
- a preferred resonator comprises a spindle shaped sapphire dielectric resonator mounted inside and occupying some 25% of the volume of a superconducting niobium cavity.
- Numeral 1 designates a single crystal of alumina of generally cylindrical shape being a sapphire having protrusions 2 and 2' which fit closely in recesses in the base 3 and lid 3' of a niobium housing.
- the lid 3 1 can be clamped by means of the groove 4 (using clamping means not shown) to hold the sapphire rigidly between the lid and the base.
- an indium seal of suitable dimensions is provided whereby on clamping, the indium seals the lid 3' to the side walls 5 at groove 6 in lid 3'.
- One or more microwave probes 7 (schematically shown) are used to couple microwave power into the cavity through one or more holes 8 .
- the hole dimension and the probe position are designed to optimise the coupling to the resonator without degrading its performance.
- the body of the sapphire dielectric resonator is a cylinder 30mm diameter and 30mm long.
- the protrusions 2 and 2' are about 7mm in diameter and 12mm long, and fit into recesses at the ends of the housing which is a 50mm diameter x 50mm long cylindrical niobium cavity.
- the system is designed to have a fundamental TE 011 mode at about 1 GHz, and for the SDR to be spaced about 5 scale lengths of the evanescent field from the cavity walls. This greatly reduces any perturbing effects of the cavity.
- the cylindrical symmetry is also chosen so that transverse and longitudinal vibrations or fluctuations in the position of the SDR relative to the niobium cavity will, to first order, have a null contribution to the frequency of the resonator. This property will occur so long as the particular modes of the SDR have sufficient symmetry. This requires, firstly, that the symmetry axis of the sapphire be chosen to be parallel to the resonator axis, otherwise the anisotropy of the dielectric constant will cause angular distortion of the resonator field leading to incomplete nulling of frequency fluctuations. Secondly, nulling requires that modes with sufficient symmetry are selected.
- the high Q-factor and the decoupling of the microwave energy from the walls allows much higher electric fields to be generated in a sapphire loaded conducting cavity than in other configurations.
- an appropriate mode in the sapphire dielectric resonator and by placing appropriate beam entry holes in the housing in line with a small hole in the dielectric resonator (to allow penetration of a charged particle beam), it is possible to use this resonator as a high efficiency particle accelerator element.
- the preferred substance from which the crystalline alumina dielectric resonator is constructed is a single crystal of sapphire but ruby or emerald may also be used.
- the metallic housing is preferably constructed from niobium although other high conductivity metals such as copper, silver, lead, tin and alloys and mixtures (including intermetallic compounds) may be used.
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU669284 | 1984-08-21 | ||
| AU6692/84 | 1984-08-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0173545A2 true EP0173545A2 (de) | 1986-03-05 |
| EP0173545A3 EP0173545A3 (de) | 1986-09-10 |
Family
ID=3697271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP85305945A Withdrawn EP0173545A3 (de) | 1984-08-21 | 1985-08-21 | Mit einem Kristallblock aus Aluminiumoxyd belasteter Hohlraumresonator |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0173545A3 (de) |
| JP (1) | JPS61112402A (de) |
| DE (1) | DE173545T1 (de) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0306090A1 (de) * | 1987-09-04 | 1989-03-08 | Philips Composants | Mikrowellen-Oszillator mit dielektrischem Resonator, stabil für mechanische Schwingungen |
| EP0392417A1 (de) * | 1989-04-13 | 1990-10-17 | Alcatel Espace | Dielektrisches Resonatorfilter |
| DE4316334A1 (de) * | 1993-05-15 | 1994-11-17 | Forschungsgesellschaft Fuer In | Dielektrischer Resonator |
| WO1997023430A1 (en) * | 1995-12-22 | 1997-07-03 | South Bank University Enterprises Limited | Improved sintered materials |
| DE19824997A1 (de) * | 1998-06-05 | 1999-12-16 | Forschungszentrum Juelich Gmbh | Mehrpol-Bandpaßfilter mit elliptischer Filtercharakteristik |
| WO2002033780A1 (en) * | 2000-10-20 | 2002-04-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Cavity filter |
| EP2178156A1 (de) * | 2008-10-15 | 2010-04-21 | Com Dev International Limited | Dielektrischer Resonator und Filter mit Material von geringer Durchlässigkeit |
| CN103716977A (zh) * | 2014-01-06 | 2014-04-09 | 中国原子能科学研究院 | 高机械强度的高频谐振腔体 |
| US11091784B2 (en) | 2014-12-16 | 2021-08-17 | Dsm Ip Assets B.V. | Process for enzymatic hydrolysis of lignocellulosic material and fermentation of sugars |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1284491B (de) * | 1967-06-27 | 1968-12-05 | Telefunken Patent | Hohlraumresonator und Verfahren zu dessen Herstellung |
| DE2538614C3 (de) * | 1974-09-06 | 1979-08-02 | Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto (Japan) | Dielektrischer Resonator |
| FR2534088B1 (fr) * | 1982-10-01 | 1988-10-28 | Murata Manufacturing Co | Resonateur dielectrique |
-
1985
- 1985-08-21 EP EP85305945A patent/EP0173545A3/de not_active Withdrawn
- 1985-08-21 JP JP18380185A patent/JPS61112402A/ja active Pending
- 1985-08-21 DE DE1985305945 patent/DE173545T1/de active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0306090A1 (de) * | 1987-09-04 | 1989-03-08 | Philips Composants | Mikrowellen-Oszillator mit dielektrischem Resonator, stabil für mechanische Schwingungen |
| FR2620281A1 (fr) * | 1987-09-04 | 1989-03-10 | Radiotechnique Compelec | Oscillateur hyperfrequence a resonateur dielectrique, stable par rapport aux vibrations mecaniques |
| EP0392417A1 (de) * | 1989-04-13 | 1990-10-17 | Alcatel Espace | Dielektrisches Resonatorfilter |
| FR2646022A1 (fr) * | 1989-04-13 | 1990-10-19 | Alcatel Espace | Filtre a resonateur dielectrique |
| US5027090A (en) * | 1989-04-13 | 1991-06-25 | Alcatel Espace | Filter having a dielectric resonator |
| DE4316334A1 (de) * | 1993-05-15 | 1994-11-17 | Forschungsgesellschaft Fuer In | Dielektrischer Resonator |
| GB2323840B (en) * | 1995-12-22 | 1999-08-25 | South Bank Univ Entpr Ltd | Improved sintered materials |
| GB2323840A (en) * | 1995-12-22 | 1998-10-07 | South Bank Univ Entpr Ltd | Improved sintered materials |
| WO1997023430A1 (en) * | 1995-12-22 | 1997-07-03 | South Bank University Enterprises Limited | Improved sintered materials |
| DE19824997A1 (de) * | 1998-06-05 | 1999-12-16 | Forschungszentrum Juelich Gmbh | Mehrpol-Bandpaßfilter mit elliptischer Filtercharakteristik |
| DE19824997C2 (de) * | 1998-06-05 | 2003-01-09 | Forschungszentrum Juelich Gmbh | Mehrpol-Bandpaßfilter mit elliptischer Filtercharakteristik |
| WO2002033780A1 (en) * | 2000-10-20 | 2002-04-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Cavity filter |
| EP2178156A1 (de) * | 2008-10-15 | 2010-04-21 | Com Dev International Limited | Dielektrischer Resonator und Filter mit Material von geringer Durchlässigkeit |
| EP2315305A1 (de) * | 2008-10-15 | 2011-04-27 | COM DEV International Ltd. | Dielektrischer Resonator und Filter mit Material von geringer Durchlässigkeit |
| US8031036B2 (en) | 2008-10-15 | 2011-10-04 | Com Dev International Ltd. | Dielectric resonator and filter with low permittivity material |
| US8598970B2 (en) | 2008-10-15 | 2013-12-03 | Com Dev International Ltd. | Dielectric resonator having a mounting flange attached at the bottom end of the resonator for thermal dissipation |
| CN103716977A (zh) * | 2014-01-06 | 2014-04-09 | 中国原子能科学研究院 | 高机械强度的高频谐振腔体 |
| US11091784B2 (en) | 2014-12-16 | 2021-08-17 | Dsm Ip Assets B.V. | Process for enzymatic hydrolysis of lignocellulosic material and fermentation of sugars |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0173545A3 (de) | 1986-09-10 |
| JPS61112402A (ja) | 1986-05-30 |
| DE173545T1 (de) | 1986-09-25 |
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Representative=s name: ING. FISCHETTI WEBER |
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| TCNL | Nl: translation of patent claims filed | ||
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| 18D | Application deemed to be withdrawn |
Effective date: 19870511 |
|
| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BLAIR, DAVID GERALD |