EP0162515B1 - Ultrasonic transducer devices using an array of piezoelectric transducer elements - Google Patents

Ultrasonic transducer devices using an array of piezoelectric transducer elements Download PDF

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EP0162515B1
EP0162515B1 EP85200735A EP85200735A EP0162515B1 EP 0162515 B1 EP0162515 B1 EP 0162515B1 EP 85200735 A EP85200735 A EP 85200735A EP 85200735 A EP85200735 A EP 85200735A EP 0162515 B1 EP0162515 B1 EP 0162515B1
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piezoelectric
resonance frequencies
thickness
zones
frequencies
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EP0162515A1 (en
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Roger Henri Coursant
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Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
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Laboratoires dElectronique Philips SAS
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface

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  • the present invention relates to an ultrasonic transduction device comprising a linear array of parallel piezoelectric transducer elements.
  • the transducer elements have in such a device a length L large compared to the other dimensions (the width W and the thickness T).
  • This device can be used for example in the field of non-destructive testing of materials or in that of the exploration of biological tissues.
  • the unimodal operation of the device described in the cited patent is obtained by imposing on the W / T ratio an upper limit of the order of 0.8, a value below which, in addition, the effective electromechanical coupling coefficient takes a higher value (a variation curve of the electromechanical coupling coefficient, such as that of FIG. 9 of the cited patent, provides information on the relative amplitude of the vibrations obtained in the vibration mode considered, depending on the choice of W / T).
  • W / T a variation curve of the electromechanical coupling coefficient, such as that of FIG. 9 of the cited patent, provides information on the relative amplitude of the vibrations obtained in the vibration mode considered, depending on the choice of W / T.
  • the inherent constraint in the choice of such values of W / T is a greater complexity of production, the grooving between successive piezoelectric elements of the strip being all the more difficult to achieve the narrower the width of these elements.
  • the object of the invention is to propose a new bar structure which is no longer subject to this constraint relating to the W / T ratio and which is therefore simpler to produce while remaining efficient.
  • the originality rests on the way of exploiting vibrational modes coexisting in the so-called coupling zones of the diagram of dispersion of the resonance frequencies of the piezoelectric material used.
  • This operation is carried out by a judicious choice of the geometrical characteristics of the piezoelectric elements, and in particular of their thickness, and by placing themselves voluntarily in areas of operation of the transduction device where this operation is not unimodal.
  • the transduction sensitivity is thus increased due to the exploitation of several resonance modes having high electromechanical couplings and, simultaneously, due to the good damping of the residual and harmonic modes.
  • the vibratory state of the resonant cavity that it constitutes is said to be decoupled when the elastic vibrations along the thickness T are independent of those along the width W (and vice versa).
  • the resonance frequencies according to the thickness T of the cavity are then given by the expression: where n is a positive or zero integer, and v T the propagation speed of the ultrasonic waves according to T (assumed to be independent of the W / T ratio). Consequently, the product FT (which is the quantity represented on the ordinate on the Fabian-Sato diagrams) is given by the expression: which corresponds to a network of lines parallel to the abscissa axis (see Figure 1 attached).
  • the resonance frequencies of the cavity along the width W are given by the expression: where v w is the propagation speed according to W (also assumed to be independent of the W / T ratio), and the product FT by the expression: to which corresponds a network of hyperbolas also represented in FIG. 1.
  • This network of lines and this network of hyperbolas are ideal networks of asymptotes which are the limits obtained in the case of a decoupled bar, asymptotes of the dispersion curves observed in the case of a piezoelectric bar whose states vibratory according to the thickness and the width are coupled.
  • the frequency dispersion diagram takes the form of that shown in FIG. 2.
  • the ultrasonic transduction device described here preferably comprises the following structure, namely a network of piezoelectric transducer elements in the form of rectangular plates of piezoelectric material (generally produced from a single plate which has been cut out) , these plates of length L, of width W and of thickness T having their front and rear faces equipped with electrodes and being arranged parallel to each other and at regular intervals with their faces of dimensions L and T facing each other.
  • the structure according to the invention is then characteristic, in the sense that the thickness of the piezoelectric elements is chosen to be equal to half the wavelength corresponding to a frequency substantially equal to the average of two successive resonant frequencies of the piezoelectric material concerned.
  • the impedance curve of FIG. 3 corresponds to a curve of the associated one-dimensional transfer function (examples corresponding to the paired modes of the boxed zones B and C of FIG. 2 are given in FIGS. 4 and 5 respectively), which translates the variation of the! RVEI module of the vibratory speed / electrical excitation ratio at the terminals as a function of the frequency. If such a transfer function takes into account the internal losses of the piezoelectric material, the resonances presented by this transfer function are damped (see FIG. 6, corresponding to the area C of FIG. 2).
  • the device can be equipped with an interference transmittance structure resonating on the frequency F A , this structure comprising one or more adaptation layers at the front, or at the rear, or at the front and at the rear.
  • F A is the average frequency, in the example of FIG. 6, of the frequencies F R2 and F R3 corresponding to the maximums of the transfer function, these maximums corresponding themselves, as we have seen, to the minima of the curve associated electrical impedance.
  • the adaptation is carried out for example with a single interference layer known as a quarter wave tuned to the frequency F A.
  • the difference l: 1F visible in FIG. 7 shows the transfer function corresponding to this adaptation structure, and is more precisely the width at half height of the transmittance of the quarter wave layer tuned to F A with tap taking into account the acoustic impedances of the adjacent media.
  • load conditions can also be used to improve, via electrical adaptation, the Guassian aspect of the module of the spectrum of the impulse response.
  • the relative difference of the coupled modes 1 and 2 is such that it is then necessary to associate with the transduction device not only a structure d broadband adaptation-several layers of quarter-wave type, with possibly offset chords-but also an electrical adaptation network, for example simply consisting of a resistor in series and an inductor in parallel.
  • any simple, arithmetic or geometric average, or an average of a more complex nature, such as a quadratic average, or a weighted average the weighting of each frequency can then for example be effected by the electromechanical coupling coefficient associated with each of them in the vibration mode concerned.
  • the invention is applicable in a rigorously similar manner to the case of three-dimensional vibrational states, when the ultrasonic transduction device is a grooved two-dimensional strip with a network of piezoelectric parallelepipedal transducer elements.
  • the FT product this time being expressed not as a function only of the W / T ratio but of the two geometrical configuration reports. W / T and L / T.
  • a two-dimensional Fabian-Sato diagram such as that of FIG. 2 is the limit, when L and therefore L / T become large, of a three-dimensional Fabian-Sato diagram.
  • the plane coupling zones observed on the three-dimensional diagrams become, in this case of the three-dimensional generalization, three-dimensional coupling zones, tubular regions, such as for example the region R indicated by an arrow in FIG. 9 which shows the look of a three-dimensional Fabian-Sato diagram. It will also be noted that, given the reversibility between the dimensions L and W depending on whether one or the other is greater than the other, this three-dimensional diagram and the particular coupling zones which are observed there have symmetry with respect to the bisector plane of the axes (0, LIT), (0, W / T).

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)

Description

La présente invention concerne un dispositif de transduction ultrasonore comprenant une barrette linéaire d'éléments transducteurs piézoélectriques parallèles. Les éléments transducteurs ont dans un tel dispositif une longueur L grande devant les autres dimensions (la largeur W et l'épaisseur T). Ce dispositif est utilisable par exemple dans le domaine du contrôle non destructif de matériaux ou dans celui de l'exploration de tissus biologiques.The present invention relates to an ultrasonic transduction device comprising a linear array of parallel piezoelectric transducer elements. The transducer elements have in such a device a length L large compared to the other dimensions (the width W and the thickness T). This device can be used for example in the field of non-destructive testing of materials or in that of the exploration of biological tissues.

Le brevet des Etats-Unis d'Amérique N° 4101795 délivré le 18 juillet 1978 au nom de la société cessionnaire Matsushita Electric Industrial Company décrit un dispositif de transduction ultrasonore dont les éléments transducteurs piézoélectriques (voir les figures 1 à 3 de ce brevet) peuvent, grâce à des dispositions géométriques particulières, vibrer en mode d'épaisseur pur, c'est-à-dire de la façon idéale dont un piston se déplace, sans couplage indésirable avec des modes vibratoires perturbateurs.United States Patent No. 4101795 issued July 18, 1978 in the name of the transferee Matsushita Electric Industrial Company describes an ultrasonic transducer device whose piezoelectric transducer elements (see Figures 1 to 3 of this patent) can , thanks to particular geometrical arrangements, to vibrate in pure thickness mode, that is to say in the ideal way in which a piston moves, without undesirable coupling with disturbing vibratory modes.

La connaissance des modes de vibration d'éléments minces piézoélectriques est importante pour la conception de barrettes linéaires de transducteurs. Une telle connaissance peut être apportée de façon expérimentale (ou bien de façon théorique au moyen d'une modélisation bi- ou tridimensionnelle exploitée par exemple par une méthode d'éléments finis) en effectuant l'opération dite de caractérisation d'un matériau piézoélectrique déterminé, qui consiste à établir de façon aussi complète que possible les relations entre les paramètres dont dépend le fonctionnement du dispositif de transduction réalisé avec ce matériau. Ces relations peuvent être visualisées sous la forme de diverses courbes, et notamment sous la forme des diagrammes dits de Fabian-Sato qui représentent les courbes de dispersion des fréquences de résonance du matériau concerné (voir E. L. Fabian, études présentées dans MASON, "Physical Acoustics", volume 1, partie A, chapitre 6, pages 456 et 457, Edition Academic Press, 1964; voir aussi le brevet cité plus haut, dont Mr. Sato est codéposant). Ces courbes montrent pour les différents modes de vibration du matériau (fondamental et harmoniques) la relation entre le rapport W/T et le produit F. T. de la fréquence de résonance par l'épaisseur des éléments piézoélectriques: la figure 4 du document cité montre un exemple d'un tel réseau de courbes.Knowledge of the vibration modes of thin piezoelectric elements is important for the design of linear arrays of transducers. Such knowledge can be brought in experimentally (or theoretically by means of a two- or three-dimensional modeling exploited for example by a finite element method) by carrying out the operation called characterization of a determined piezoelectric material. , which consists in establishing as completely as possible the relationships between the parameters on which the operation of the transduction device made with this material depends. These relationships can be viewed in the form of various curves, and in particular in the form of so-called Fabian-Sato diagrams which represent the dispersion curves of the resonance frequencies of the material concerned (see EL Fabian, studies presented in MASON, "Physical Acoustics ", volume 1, part A, chapter 6, pages 456 and 457, Edition Academic Press, 1964; see also the patent cited above, of which Mr. Sato is co-applicant). These curves show for the different modes of vibration of the material (fundamental and harmonics) the relationship between the W / T ratio and the product FT of the resonant frequency by the thickness of the piezoelectric elements: Figure 4 of the cited document shows an example of such a network of curves.

Comme permet de le prévoir l'examen de ce réseau, le fonctionnement unimodal du dispositif décrit dans le brevet cité est obtenu en imposant au rapport W/T une limite supérieure de l'ordre de 0,8, valeur au-dessous de laquelle, en outre, le coefficient de couplage électromécanique effectif prend une valeur plus élevée (une courbe de variation du coefficient de couplage électromécanique, telle que celle de la figure 9 du brevet cité, renseigne sur l'amplitude relative des vibrations obtenues dans le mode de vibration considéré, selon le choix de W/T). Cependant la contrainte inhérente au choix de telles valeurs de W/T est une plus grande complexité de réalisation, le rainurage entre éléments piézoélectriques successifs de la barrette étant d'autant plus difficile à réaliser que la largeur de ces éléments est plus faible.As can be seen from the examination of this network, the unimodal operation of the device described in the cited patent is obtained by imposing on the W / T ratio an upper limit of the order of 0.8, a value below which, in addition, the effective electromechanical coupling coefficient takes a higher value (a variation curve of the electromechanical coupling coefficient, such as that of FIG. 9 of the cited patent, provides information on the relative amplitude of the vibrations obtained in the vibration mode considered, depending on the choice of W / T). However, the inherent constraint in the choice of such values of W / T is a greater complexity of production, the grooving between successive piezoelectric elements of the strip being all the more difficult to achieve the narrower the width of these elements.

Le but de l'invention est de proposer une nouvelle structure de barrette qui ne soit plus soumise à cette contrainte relative au rapport W/T et qui soit par conséquent plus simple de réalisation tout en restant performante.The object of the invention is to propose a new bar structure which is no longer subject to this constraint relating to the W / T ratio and which is therefore simpler to produce while remaining efficient.

L'invention concerne à cet effect un dispositif de transduction ultrasonore comprenant une barrette linéaire d'éléments transducteurs piézoélectriques parallèles de largeur W, caractérisé en ce que l'épaisseur T desdits éléments transducteurs est égale à la moitié de la longueur d'onde correspondant à une fréquence F égale à la moyenne de deux fréquences de résonance piézoélectrique successives du matériau piézoélectrique concerné, pour lesquelles les produits de cette épaisseur par lesdites fréquences de résonance encadrent, sur le diagramme bidimensionnel des courbes F.T=f(W/T) de dispersion des fréquences de résonance relatif au matériau piézoélectrique concerné, des zones dites de couplage des deux modes vibratoires successifs correspondant auxdites deux fréquences, lesdites zones de couplage étant définies par le fait que, dans ces zones, les fréquences de résonance et les efficacités de couplage électromécanique de ces deux modes sont respectivement voisines.The invention relates to this effect an ultrasonic transduction device comprising a linear array of parallel piezoelectric transducer elements of width W, characterized in that the thickness T of said transducer elements is equal to half the wavelength corresponding to a frequency F equal to the average of two successive piezoelectric resonance frequencies of the piezoelectric material concerned, for which the products of this thickness by said resonance frequencies frame, on the two-dimensional diagram of the curves FT = f (W / T) of dispersion of the resonance frequencies relating to the piezoelectric material concerned, so-called coupling zones of the two successive vibration modes corresponding to said two frequencies, said coupling zones being defined by the fact that, in these zones, the resonance frequencies and the electromechanical coupling efficiencies of these two modes are respectively neighbors.

L'invention concerne aussi un dispositif de transduction ultrasonore comprenant plusieurs barrettes linéaires parallèles d'éléments transducteurs piézoélectriques parallélépipédiques de longueur L et de largeur W, caractérisé en ce que l'épaisseur T desdits éléments transducteurs est égale à la moitié de la longueur d'onde correspondant à une fréquence F égale à la moyenne de deux fréquences de résonance piézoélectrique successives du matériau piézoélectrique concerné, pour lesquelles les produits de cette épaisseur par lesdites fréquences de résonance encadrent, sur le diagramme tridimensionnel des courbes F.T=f(W/T, LfT) de dispersion des fréquences de résonance relatif au matériau piézoélectrique concerné, des zones dites de couplage des deux modes vibratoires successifs correspondant auxdites deux fréquences, lesdites zones de couplage étant définies par le fait que, dans ces zones, les fréquences de résonance et les efficacités de couplage électromécanique de ces deux modes sont respectivement voisines.The invention also relates to an ultrasonic transduction device comprising several parallel linear bars of piezoelectric parallelepipedal transducer elements of length L and width W, characterized in that the thickness T of said transducer elements is equal to half the length of wave corresponding to a frequency F equal to the average of two successive piezoelectric resonance frequencies of the piezoelectric material concerned, for which the products of this thickness by said resonance frequencies frame, on the three-dimensional diagram of the curves FT = f (W / T, LfT) of dispersion of the resonance frequencies relative to the piezoelectric material concerned, so-called coupling zones of the two successive vibrational modes corresponding to said two frequencies, said coupling zones being defined by the fact that, in these zones, the resonance frequencies and the coupla efficiencies electromechanical ge of these two modes are respectively close.

Dans les structures ainsi proposées, l'originalité repose sur la manière d'exploiter des modes vibratoires coexistant dans les zones dites de couplage du diagramme de dispersion des fréquences de résonance du matériau piézoélectrique utilisé. Cette exploitation s'effectue par un choix judicieux des caractéristiques géométriques des éléments piézoéléctriques, et notamment de leur épaisseur, et en se plaçant volontairement dans des zones de fonctionnement du dispositif de transduction où ce fonctionnement n'est pas unimodal. On augmente ainsi la sensibilité de transduction en raison de l'exploitation de plusieurs modes de résonance ayant des couplages électromécaniques élevés et, simultanément, en raison du bon amortissement des modes résiduels et harmoniques.In the structures thus proposed, the originality rests on the way of exploiting vibrational modes coexisting in the so-called coupling zones of the diagram of dispersion of the resonance frequencies of the piezoelectric material used. This operation is carried out by a judicious choice of the geometrical characteristics of the piezoelectric elements, and in particular of their thickness, and by placing themselves voluntarily in areas of operation of the transduction device where this operation is not unimodal. The transduction sensitivity is thus increased due to the exploitation of several resonance modes having high electromechanical couplings and, simultaneously, due to the good damping of the residual and harmonic modes.

Les particularités et avantages de l'invention apparaîtront maintenant de façon plus précise dans la description qui suit et qui se réfère aux figures annexées, dans lesquelles:

  • les figures 1 et 2 donnent des exemples de diagrammes de Fabian-Sato montrant respectivement les courbes de dispersion des fréquences de résonance piézoélectrique et de résonance élastique rigidifiée, ou antirésonance, du dispositif de transduction selon son épaisseur et selon sa largeur;
  • la figure 3 montre la courbe de variation du module IIEI de l'impédance électrique en fonction de la fréquence dans le cas de la zone de couplage correspondant à l'encadré C de la figure 2;
  • les figures 4 et 5 montrent les courbes de variation de la fonction de transfert unidimensionnelle RVE (rapport vitesse vibratoire/excitation électrique) associées à la figure 3 dans le cas des zones de couplage correspondant respectivement aux encadrés B et C de la figure 2;
  • les figures 6 et 8 montrent l'évolution de la courbe de la figure 5 d'une part lorsque seules les pertes internes du matériau sont prises en compte par rapport à cette figure 5 et d'autre part lorsque le dispositif de transduction a été adapté à l'aide d'une structure interférentielle de fonction de transfert TFE donnée par la figure 7;
  • la figure 9 montre un exemple de diagramme tridimensionnel de Fabian-Sato;
The features and advantages of the invention will now appear more precisely in the description which follows and which refers to the appended figures, in which:
  • FIGS. 1 and 2 give examples of Fabian-Sato diagrams respectively showing the dispersion curves of the frequencies of piezoelectric resonance and of stiffened elastic resonance, or antiresonance, of the transduction device according to its thickness and according to its width;
  • FIG. 3 shows the variation curve of the IIEI module of the electrical impedance as a function of the frequency in the case of the coupling zone corresponding to box C of FIG. 2;
  • FIGS. 4 and 5 show the variation curves of the one-dimensional transfer function RVE (vibrational speed / electrical excitation ratio) associated with FIG. 3 in the case of the coupling zones corresponding respectively to boxes B and C of FIG. 2;
  • FIGS. 6 and 8 show the evolution of the curve of FIG. 5 on the one hand when only the internal losses of the material are taken into account with respect to this FIG. 5 and on the other hand when the transduction device has been adapted using an interference structure of the TFE transfer function given by FIG. 7;
  • FIG. 9 shows an example of a three-dimensional Fabian-Sato diagram;

Si l'on considère un simple barreau parallélépipédique supposé élastique, l'état vibratoire de la cavité résonnante qu'il constitue est dit découplé lorsque les vibrations élastiques suivant l'épaisseur T sont indépendantes de celles suivant la largeur W (et réciproquement). Les fréquences de résonance suivant l'épaisseur T de la cavité sont alors données par l'expression:

Figure imgb0001
où n est entier positif ou nul, et vT la vitesse de propagation des ondes ultrasonores suivant T (supposée indépendante du rapport W/T). En conséquence, le produit F.T (qui est la grandeur représentée en ordonnée sur les diagrammes de Fabian-Sato) est donné par l'expression:
Figure imgb0002
à laquelle correspond un réseau de droites parallèles à l'axe des abscisses (voir la figure 1 ci- jointe).If we consider a simple parallelepiped bar supposed to be elastic, the vibratory state of the resonant cavity that it constitutes is said to be decoupled when the elastic vibrations along the thickness T are independent of those along the width W (and vice versa). The resonance frequencies according to the thickness T of the cavity are then given by the expression:
Figure imgb0001
where n is a positive or zero integer, and v T the propagation speed of the ultrasonic waves according to T (assumed to be independent of the W / T ratio). Consequently, the product FT (which is the quantity represented on the ordinate on the Fabian-Sato diagrams) is given by the expression:
Figure imgb0002
which corresponds to a network of lines parallel to the abscissa axis (see Figure 1 attached).

De même, les fréquences de résonance de la cavité suivant la largeur W sont données par l'expression:

Figure imgb0003
où vw est la vitesse de propagation suivant W (supposée aussi indépendante du rapport W/T), et le produit F.T par l'expression:
Figure imgb0004
à laquelle correspond un réseau d'hyperboles également représenté sur la figure 1.Similarly, the resonance frequencies of the cavity along the width W are given by the expression:
Figure imgb0003
where v w is the propagation speed according to W (also assumed to be independent of the W / T ratio), and the product FT by the expression:
Figure imgb0004
to which corresponds a network of hyperbolas also represented in FIG. 1.

Ce réseau de droites et ce réseau d'hyperboles sont des réseaux idéaux d'asymptotes qui sont les limites, obtenues dans les cas d'un barreau découplé, des asymptotes des courbes de dispersion observées dans le cas d'un barreau piézoélectrique dont les états vibratoires suivant l'épaisseur et la largeur sont couplés. Dans ce dernier cas, le diagramme de dispersion des fréquences prend une allure telle que celle représentée sur la figure 2. L'observation des courbes de ce diagramme montre par exemple que, au voisinage de W/T=0,5 (voir l'encadré A de cette figure 2), la résonance fondamentale d'épaisseur RFE (première asymptote "horizontale") correspond approximativement à la moité de la résonance fondamentale de largeur RFL (première asymptote hyperbolique) ou, ce qui est équivalent, que la résonance fondamentale de largeur RFL correspond approximativement à l'harmonique 2 de la résonance fondamentale d'épaisseur RFE. Du point de vue piézoélectrique, l'excitation de la résonance d'épaisseur n'implique donc qu'une faible excitation de la résonance de largeur, ce qui se traduit aussi par une augmentation, au voisinage de W/T=0,5, du coefficient de couplage électromécanique effectif associé à la résonance d'épaisseur. C'est l'obtention de cette résonance unimodale qui est exploitée dans le brevet cité précédemment, où l'on s'affranchit donc de modes vibratoires perturbateurs au profit d'un mode vibratoire unique.This network of lines and this network of hyperbolas are ideal networks of asymptotes which are the limits obtained in the case of a decoupled bar, asymptotes of the dispersion curves observed in the case of a piezoelectric bar whose states vibratory according to the thickness and the width are coupled. In the latter case, the frequency dispersion diagram takes the form of that shown in FIG. 2. The observation of the curves of this diagram shows for example that, in the vicinity of W / T = 0.5 (see the box A of this figure 2), the fundamental resonance of thickness RFE (first "horizontal" asymptote) corresponds approximately to half of the fundamental resonance of width RFL (first hyperbolic asymptote) or, which is equivalent, that the fundamental resonance of width RFL corresponds approximately to harmonic 2 of the fundamental resonance of thickness RFE. The piezoelectric point of view, the excitation of the resonance of thickness implies a small excitation of the resonance width, which also results in an increase in the vicinity of W / T = 0, 5, the effective electromechanical coupling coefficient associated with the thickness resonance. It is the obtaining of this unimodal resonance which is exploited in the aforementioned patent, where one therefore gets rid of disturbing vibratory modes in favor of a single vibratory mode.

Dans le cas de l'invention, on effectue paradoxalement la démarche inverse, à savoir que l'on sélectionne sur le diagramme de Fabian-Sato correspondant à un matériau piézoélectrique déterminé des zones de couplage des résonances. Cette sélection est opérée en choisissant des valeurs du rapport W/T correspondant aux intersections des asymptotes des caractéristiques de résonance latérale et d'épaisseur (des exemples de telles intersections sont indiqués dans les encadrés B et C de la figure 2). En effet, dans les zones entourant ces intersections, on observe la présence simultanée de deux modes de résonance dont les fréquences et les efficacités de couplage électromécanique sont voisines. Par rapport à ces modes dits jumelés, les autres modes sont, comme le montre la figure 2, nettement plus éloignés en fréquence (ou sont d'efficacité de couplage électromécanique beaucoup plus faible).In the case of the invention, paradoxically the reverse approach is carried out, namely that one selects on the Fabian-Sato diagram corresponding to a determined piezoelectric material of the resonance coupling zones. This selection is made by choosing values of the W / T ratio corresponding to the intersections of the asymptotes of the lateral resonance and thickness characteristics (examples of such intersections are indicated in boxes B and C of FIG. 2). In fact, in the zones surrounding these intersections, the simultaneous presence of two resonance modes is observed, the frequencies and the electromechanical coupling efficiencies of which are close. Compared to these so-called twin modes, the other modes are, as shown in FIG. 2, much more distant in frequency (or are much lower in electromechanical coupling efficiency).

Lors de la caractérisation d'un matériau piézoélectrique, il est intéressant d'établir un autre type de relation que les diagrammes déjà cités, à savoir celle qui lie le module de l'impédance électrique IE du matériau et la fréquence de travail du dispositif de transduction ultrasonore réalisé avec ce matériau. Une courbe traduisant cette relation est représentée sur la figure 3. La lecture de cette courbe permet de connaître les valeurs des fréquences de résonance piézoélectrique du matériau (ce sont les valeurs de fréquence pour lesquelles, l'impédance présentant un minimum relatif, la conversion d'énergie opérée par le dispositif de transduction est maximale) ainsi que les valeurs de ses fréquences d'antirésonance, dites fréquences de résonance élastique rigidifiée et auxquelles correspondent au contraire des maximums relatifs de la valeur de l'impédance électrique.When characterizing a piezoelectric material, it is interesting to establish a different type of relation than the diagrams already mentioned, namely that which links the module of the electrical impedance IE of the material and the working frequency of the device. ultrasonic transduction performed with this material. A curve translating this relation is represented on figure 3. The reading of this curve makes it possible to know the values of the piezoelectric resonance frequencies of the material (these are the values of frequency for which, the impedance having a relative minimum, the conversion d energy operated by the transducer is maximum) as well as the values of its anti-resonance frequencies, said frequencies of stiffened elastic resonance and to which, on the contrary, correspond maximums of the value of the electrical impedance.

Le dispositif de transduction ultrasonore ici décrit comprend de préférence la structure suivante, à savoir un réseau d'éléments transducteurs piézoélectriques se présentant sous la forme de plaquettes rectangulaires de matériau piézoélectrique (réalisées en général à partir d'une plaque unique qui a été découpée), ces plaquettes de longueur L, de largeur W et d'épaisseur T ayant leurs faces avant et arrière équipées d'électrodes et étant disposées parallèlement les unes aux autres et à intervalles réguliers avec leurs faces de dimensions L et T en regard. La structure selon l'invention est alors caractéristique, en ce sens que l'épaisseur des éléments piézoélectriques est chosie égale à la moitié de la longueur d'onde correspondant à une fréquence sensiblement égale à la moyenne de deux fréquences de résonance successives du matériau piézoélectrique concerné.The ultrasonic transduction device described here preferably comprises the following structure, namely a network of piezoelectric transducer elements in the form of rectangular plates of piezoelectric material (generally produced from a single plate which has been cut out) , these plates of length L, of width W and of thickness T having their front and rear faces equipped with electrodes and being arranged parallel to each other and at regular intervals with their faces of dimensions L and T facing each other. The structure according to the invention is then characteristic, in the sense that the thickness of the piezoelectric elements is chosen to be equal to half the wavelength corresponding to a frequency substantially equal to the average of two successive resonant frequencies of the piezoelectric material concerned.

A la courbe d'impédance de la figure 3 correspond une courbe de la fonction de transfert unidimensionnelle associée (des exemples correspondant aux modes jumelés des zones encadrées B et C de la figure 2 sont donnés sur les figures 4 et 5 respectivement), qui traduit la variation du module !RVEI du rapport vitesse vibratoire/excitation électrique aux bornes en fonction de la fréquence. Si une telle fonction de transfert prend en compte les pertes internes du matériau piézoélectrique, les résonances présentées par cette fonction de transfert s'amortissent (voir la figure 6, correspondant à la zone C de la figure 2).The impedance curve of FIG. 3 corresponds to a curve of the associated one-dimensional transfer function (examples corresponding to the paired modes of the boxed zones B and C of FIG. 2 are given in FIGS. 4 and 5 respectively), which translates the variation of the! RVEI module of the vibratory speed / electrical excitation ratio at the terminals as a function of the frequency. If such a transfer function takes into account the internal losses of the piezoelectric material, the resonances presented by this transfer function are damped (see FIG. 6, corresponding to the area C of FIG. 2).

L'étude menée jusqu'à présent considérait le cas d'un dispositif de transduction ultrasonore sans couches d'adaptation, avec simplement deux milieux de propagation de type semi-infini sur les faces électrodées avant et arrière. On peut équiper le dispositif d'une structure interférentielle de transmittance résonnant sur la fréquence FA, cette structure comportant une ou plusieurs couches d'adaptation à l'avant, ou à l'arrière, ou à l'avant et à l'arrière du matériau piézoélectrique; FA est la fréquence moyenne, dans l'exemple de la figure 6, des fréquences FR2 et FR3 correspondant aux maximums de la fonction de transfert, ces maximums correspondant eux-mêmes, on l'a vu, aux minimums de la courbe d'impédance électrique associée. L'adaptation est réalisée par exemple avec une seule couche interférentielle dite quart d'onde accordée sur la fréquence FA. L'écart l:1F visible sur la figure 7 montre la fonction de transfert correspondant à cette structure d'adaptation, et est plus précisément la largeur à mi-hauteur de la transmittance de la couche quart d'onde accordée sur FA avec prise en compte des impédances acoustiques des milieux adjacents. Si l'adaptation ainsi réalisée est telle que l'étendue AF/FA est supérieure à l'écart relatif entre les modes jumelés concernés, (FR3-FR2)IFp dans le cas des modes 2 et 3 concernés par la zone C de la figure 2, alors la fonction de transfert qui, sur la figure 6, laissait encore apparaître malgré l'amortissement dû aux pertes les maximums dûs à la coexistence de deux modes, présente maintenant la forme apparaissant sur la figure 8. Plus précisément, on se trouve alors ramené au cas de l'unimodalité quasi-guassienne dont les avantages sont connus et qui permet d'obtenir une réponse impulsionnelle d'enveloppe quasi-guassienne, l'absence ou la présence d'harmoniques supérieures pouvant en outre être contrôlée par le biais des conditions de charge électrique du dispositif de transduction en émission et en réception.The study carried out so far considered the case of an ultrasonic transduction device without adaptation layers, with simply two propagation media of semi-infinite type on the front and rear electrode surfaces. The device can be equipped with an interference transmittance structure resonating on the frequency F A , this structure comprising one or more adaptation layers at the front, or at the rear, or at the front and at the rear. piezoelectric material; F A is the average frequency, in the example of FIG. 6, of the frequencies F R2 and F R3 corresponding to the maximums of the transfer function, these maximums corresponding themselves, as we have seen, to the minima of the curve associated electrical impedance. The adaptation is carried out for example with a single interference layer known as a quarter wave tuned to the frequency F A. The difference l: 1F visible in FIG. 7 shows the transfer function corresponding to this adaptation structure, and is more precisely the width at half height of the transmittance of the quarter wave layer tuned to F A with tap taking into account the acoustic impedances of the adjacent media. If the adaptation thus carried out is such that the extent AF / F A is greater than the relative difference between the paired modes concerned, (FR3-FR2) IFp in the case of modes 2 and 3 concerned by zone C of the figure 2, then the transfer function which, in figure 6, still let appear despite the damping due to the losses the maximums due to the coexistence of two modes, now presents the form appearing in figure 8. More precisely, one is is then reduced to the case of quasi-Guassian unimodality, the advantages of which are known and which makes it possible to obtain an impulse response of quasi-Guassian envelope, the absence or the presence of higher harmonics being able to be further controlled by the bias of the electrical charge conditions of the transducer in transmission and reception.

Ces conditions de charge peuvent aussi être utilisées pour améliorer, par l'intermédiaire de l'adaptation électrique, l'aspect guassien du module du spectre de la réponse impulsionnelle. Par exemple, dans le cas des modes jumelés correspondant à la zone encadrée B de la figure 2, l'écart relatif des modes 1 et 2 couplés est tel qu'il est alors nécessaire d'associer au dispositif de transduction non seulement une structure d'adaptation à large bande-plusieurs couches de type quart d'onde, à accords éventuellement décalés-mais aussi un réseau d'adaptation électrique, constitué par exemple simplement d'une résistance en série et d'une inductance en parallèle.These load conditions can also be used to improve, via electrical adaptation, the Guassian aspect of the module of the spectrum of the impulse response. For example, in the case of the paired modes corresponding to the boxed area B of FIG. 2, the relative difference of the coupled modes 1 and 2 is such that it is then necessary to associate with the transduction device not only a structure d broadband adaptation-several layers of quarter-wave type, with possibly offset chords-but also an electrical adaptation network, for example simply consisting of a resistor in series and an inductor in parallel.

Par aitleurs, dans toute la description, il est nécessaire d'entendre, par moyenne, toute moyenne simple, arithmétique ou géométrique, ou une moyenne de nature plus complexe, telle qu'une moyenne quadratique, ou une moyenne pondérée, la pondération de chaque fréquence pouvant alors par exemple être effectuée par le coefficient de couplage électromécanique associé à chacune d'elles dans le mode vibratoire concerné.By the way, throughout the description, it is necessary to hear, by average, any simple, arithmetic or geometric average, or an average of a more complex nature, such as a quadratic average, or a weighted average, the weighting of each frequency can then for example be effected by the electromechanical coupling coefficient associated with each of them in the vibration mode concerned.

Enfin, on peut préciser que l'invention est applicable de façon rigoureusement similaire au cas d'états vibratoires tridimensionnels, lorsque le dispositif de transduction ultrasonore est une barrette bidimensionnelle rainurée à réseau d'éléments transducteurs piézoélectriques parallélépipédiques. Il suffit pour cela de considérer une généralisation tridimensionnelle des digrammes de Fabian-Sato, le produit F.T. étant cette fois exprimé en fonction non plus du seul rapport W/T mais des deux rapports de configuration géométrique W/T et L/T. Il est d'ailleurs manifeste qu'un diagramme bidimensionnel de Fabian-Sato tel que celui de la figure 2 est la limite, lorsque L et donc L/T deviennent grands, d'un diagramme tridimensionnel de Fabian-Sato. Les zones de couplage planes observées sur les diagrammes tridimensionnels deviennent, dans ce cas de la généralisation tridimensionnelle, des zones de couplage à trois dimensions, des régions tubulaires, telles par exemple que la région R indiquée d'une flèche sur la figure 9 qui montre l'allure d'un diagramme tridimensionnel de Fabian-Sato. On notera d'ailleurs qu'étant donné la réversibilité entre les dimensions L et W selon que l'une, ou l'autre, est plus grande que l'autre, ce diagramme tridimensionnel et les zones de couplage particulières qui y sont observées présentent une symétrie par rapport au plan bissecteur des axes (0, LIT), (0, W/T).Finally, it can be specified that the invention is applicable in a rigorously similar manner to the case of three-dimensional vibrational states, when the ultrasonic transduction device is a grooved two-dimensional strip with a network of piezoelectric parallelepipedal transducer elements. For this, it suffices to consider a three-dimensional generalization of the Fabian-Sato digrams, the FT product this time being expressed not as a function only of the W / T ratio but of the two geometrical configuration reports. W / T and L / T. It is moreover evident that a two-dimensional Fabian-Sato diagram such as that of FIG. 2 is the limit, when L and therefore L / T become large, of a three-dimensional Fabian-Sato diagram. The plane coupling zones observed on the three-dimensional diagrams become, in this case of the three-dimensional generalization, three-dimensional coupling zones, tubular regions, such as for example the region R indicated by an arrow in FIG. 9 which shows the look of a three-dimensional Fabian-Sato diagram. It will also be noted that, given the reversibility between the dimensions L and W depending on whether one or the other is greater than the other, this three-dimensional diagram and the particular coupling zones which are observed there have symmetry with respect to the bisector plane of the axes (0, LIT), (0, W / T).

Claims (2)

1. An ultrasonic transducer device, comprising a linear array of parallel piezoelectric transducer elements having a width W, characterized in that the thickness T of said transducer elements is equal to half the wavelength corresponding to a frequency F equal to the mean value of two successive piezoelectric resonance frequencies of the relevant piezoelectric material for which the products of this thickness and said resonance frequencies frame, in the two-dimensional diagram of the dispersion curves F.T=f(W/T) of the resonance frequencies of the relevant piezoelectric material, coupling zones of the two successive vibratory modes corresponding to said two frequencies, said coupling zones being defined by the fact that in said zones the resonance frequencies and the electromechanical coupling efficiencies of these two modes approximate one another.
2. An ultrasonic transducer device as claimed in Claim 1, comprising several parallel arrays of parallelepiped piezoelectric transducer elements having a length L and a width W, characterized in that the thickness T of said transducer elements is equal to half the wavelength correspondnig to a frequency F equal to the mean value of two successive piezoelectric resonance frequencies of the relevant piezoelectric material for which the products of this thickness and said resonance frequencies frame, in the three-dimensional diagram of the dispersion curves F.T=f(W/T, L/T) of the resonance frequencies of the relevant piezoelectric material, coupling zones of the two successive vibratory modes corresponding to said two frequencies, said coupling zones being defined by the fact that in said zones the resonance frequencies and the electromechanical coupling efficiencies of these two modes approximate one another.
EP85200735A 1984-05-22 1985-05-10 Ultrasonic transducer devices using an array of piezoelectric transducer elements Expired - Lifetime EP0162515B1 (en)

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FR8407957 1984-05-22
FR8407957A FR2565033B1 (en) 1984-05-22 1984-05-22 ULTRASONIC TRANSDUCTION DEVICE WITH PIEZOELECTRIC TRANSDUCER ARRAY

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FR2565033A1 (en) 1985-11-29
FR2565033B1 (en) 1987-06-05
US4603276A (en) 1986-07-29
IL75246A0 (en) 1985-09-29
IL75246A (en) 1988-11-15
CA1230409A (en) 1987-12-15

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