EP0107686B1 - Procede et dispositif de production de photons dans la gamme des longueurs d'ondes ultraviolettes - Google Patents

Procede et dispositif de production de photons dans la gamme des longueurs d'ondes ultraviolettes Download PDF

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Publication number
EP0107686B1
EP0107686B1 EP83901325A EP83901325A EP0107686B1 EP 0107686 B1 EP0107686 B1 EP 0107686B1 EP 83901325 A EP83901325 A EP 83901325A EP 83901325 A EP83901325 A EP 83901325A EP 0107686 B1 EP0107686 B1 EP 0107686B1
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EP
European Patent Office
Prior art keywords
matrix
photons
gas
ions
bombardment
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Expired
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EP83901325A
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German (de)
English (en)
French (fr)
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EP0107686A1 (fr
Inventor
Amand A. Lucas
Jack Clark Rife
Stephen Eastwood Donnelly
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps

Definitions

  • the present invention relates to a process for the production of photons, in the range of ultraviolet wavelengths, comprising the implantation in a solid matrix of ions of inert gas or respectively insoluble with respect to the matrix, l excitation of the trapped gas in the form of extended defects of the solid matrix, and the emission of said photons by the excited gas, as well as to a device for the implementation of this process.
  • Common light sources for the near, far, and extreme ultraviolet wavelength ranges are generally discharge sources where light is produced by passing an electrical discharge through a capillary containing noble or other gases at pressures included between 10 and a few tens of thousands of Pa.
  • a commonly used gas a continuous emission spectrum results from the formation in the discharge and the subsequent radiative decay, of excited helium molecules He 2 *.
  • synchrotron Another important source of radiation in this spectrum range is the synchrotron, which is a complicated and expensive installation, accessible only in a few places in the world.
  • low energy ions (with energies from 1 to 15 keV) of the 3 He isotope are implanted in a monocrystalline solid of Nb at various doses.
  • the amount of 3 He actually captured and retained by the target is then determined by means of the reaction.
  • the spectra observed by electron bombardment consist of resonant transpositions from the first excited atomic state plus an emission of molecular continuum at longer wavelengths.
  • the authors discuss the mechanisms of excitation energy transfers and the kinetics of molecular reactions based on the time course of fluorescence intensities.
  • the object of the present invention is to point of a process and a device for producing photons in the range of ultraviolet wavelengths which are simple and inexpensive while giving results comparable to discharge sources.
  • ion bombardment of a surface of the solid matrix is carried out with low-energy ions of at least one gas as mentioned above, so as to obtain implantation over a depth not exceeding not some 10- 1 m (thousands of A) of gas in the solid matrix, and then an electron bombardment, of an energy lower than or equal to 20 keV, of the solid matrix, with excitation of the trapped gas and emission of photons above.
  • the method comprises the implantation of gas ions by one face of a solid matrix in mass and the electron bombardment of this same face with emission of the aforementioned photons induced from this face. .
  • the method comprises the implantation of gas ions in a solid lamellar matrix with a thickness less than 1 fJ.m, and the above-mentioned electronic bombardment of one of the faces of this matrix with emission of the aforementioned photons induced from the other face of the matrix.
  • a device for implementing the method according to the invention comprising a vacuum envelope, a solid matrix in which are implanted ions of at least one inert gas or respectively insoluble vis -with respect to the matrix, this matrix being mounted on a support inside the vacuum envelope, as well as an output for the photons produced provided in the envelope, this device being characterized in that it includes an electron production device capable of subjecting the matrix to electronic bombardment with an energy less than or equal to 20 keV and an electrical connection connecting the matrix to the outside making it possible to measure the electric current in the matrix, the ions aforementioned gas is implanted to a depth not exceeding a few 10- 1 m (thousands of a).
  • the device illustrated in FIG. 1 comprises a solid matrix 1 which is prepared by implantation of low energy He ions in an Al sheet with a thickness less than 1 f.Lm.
  • a He ion bombardment at low energy in the range of 5 keV, allows the implantation of a high concentration (locally greater than 10 atomic%) of He at a depth of tens to 10- 1 m ( thousands of A).
  • Helium naturally agglomerates in the gaps in the matrix produced by bombardment and forms large defects, such as gap agglomerates or microbubbles 2 which remain stable at room temperature and can withstand temperature rises of up to at a few hundred ° C, for example up to 300 ° C.
  • the device illustrated in FIG. 1 also includes a device for producing low-energy electrons 3, such as an electronic gun, this device projecting an electron beam 4 onto one of the faces 5, called the rear face, of the matrix 1.
  • the electrons in the electron beam 4 have an energy less than or equal to 20 keV, preferably between 1 and 5 keV.
  • fluorescence of the target is induced from the front face 6 of the matrix, the emission of photons being represented by the arrows in wavy lines 7.
  • the lamellar matrix 1 is in the form of a continuous strip, wound at one end in a reserve roll 20 and at its other end in a discharge roller 21.
  • the matrix can be moved in the direction of arrow 22, by rotating said rollers 20 and 21, and bring before the electron beam a new part of the matrix not yet subjected to electron bombardment.
  • This movement can be carried out manually or automatically, and it can be continuous or intermittent during the operation of the device according to the invention.
  • the matrix is a bulk substrate 8.
  • the implantation of the He ions is carried out in the same manner as for the lamellar matrix 1, proceeding so as to obtain a maximum concentration of microbubbles 2 of He at a depth, preferably less than 5. 10- 1 m (5000 A).
  • the electron gun 3 projects a beam of low energy electrons on the same surface as that by which the He ions were implanted, and a fluorescence of the target is then induced through this surface 9, the emission of photons being represented by the arrows in wavy lines 10.
  • the device illustrated in FIG. 3 represents in a more detailed way a device implementing an electronic bombardment of the front face of the matrix.
  • This device comprises an envelope 11 maintained under vacuum in which the matrix 8 is mounted on a support 12 which can be cooled by a cooling circuit 13, for example with water, in the event of use. of the high intensity device.
  • An electron gun 3 emitting a low energy electron beam of adjustable intensity is mounted on the envelope so as to direct this beam on the matrix.
  • the angle of incidence between the beam and the plane of the matrix is calculated so that the emitted photons can propagate through the exit opening 14 formed at one of the front ends of the envelope 11.
  • This end is provided with a flange 15 which is used to connect the device according to the invention to an apparatus in which ultraviolet light will be used.
  • An electrical connection 16 makes it possible in particular to measure the electronic current in the matrix.
  • An electronic screen 17 can be provided in the outlet opening 14 intended to prevent any exit of electrons through this opening, this electronic screen 17 then also being connected to the outside by an electrical connection 18.
  • the casing 11 is maintained under vacuum, either by a pumping device, not shown, connected to the casing by the flange connection 19, or by the pumping device now holding the vacuum device, not shown, connected to the flange 15 .
  • the matrix material must meet two main conditions: the insolubility of the gas in the matrix and relatively low absorption by the matrix of the gas emission continuum.
  • the material of the matrix must preferably have optical properties such that the depth of escape of the photons produced is compatible with the depth of implantation. Therefore, the penetration depth of the electron beam need not exceed this photon escape depth, and electron energies in the range of 0.1 to 20 keV are sufficient, even for surface bombardment. before, with a relatively grazing incidence.
  • This property of the photon source makes it possible to avoid the high costs necessary for carrying out high energy ionic and electronic bombardments, such as those used in known methods and devices.
  • Excitement can notably be produced by the use of a low energy electronic gun.
  • materials chosen from the group comprising metals, such as Sn, Mg, AI, semiconductors, such as Si, Ge or certain insulators, such as LiF, NaCl, can advantageously be used.
  • the source is substantially planar and the surface and the shape of the source can be simply adjusted by structuring the electron beam.
  • an effectively point source can be obtained; by scanning or spreading the beam, it is possible to obtain an extended source compatible, for example, with the slit geometry used in certain spectroscopic work.
  • a time-varying fluorescence intensity can easily be obtained by modulating the electron beam in pulses, which allows the use of the source in servo-control techniques (of the “lock in •” type).
  • the duration of existence of the fluorescence is less than 10 nsec.
  • a source of photons based on AI / He is prepared in the manner described above and implemented according to the invention under an electron bombardment having an energy of 3 800 V.
  • This source produces, as can be seen from FIG. 4, a continuous spectrum of fluorescence which extends from 5.8 to 9 10-8 m (from 580 to 900 A), which is similar to that that we get with conventional discharge sources.
  • the production of photons from the matrix was compared with the synchrotron source SURF II and this comparison indicates an efficiency greater than or equal to 10- 4 photons per electron. With sufficient electronic current, the brightness can reach that obtained by discharge lamps.
  • photon source for example for photoelectron spectroscopy in the ultraviolet, for studies of reflectivity, adsorption and photoconductivity. etc.
  • the methods and devices according to the invention have the advantage of not requiring differential pumping, gas replacement and cryogenic cooling. In addition, they are very easy to implement and flexible in operation.
  • the source according to the invention offers the advantage of a brightness, which can vary by six orders of magnitude or more, by modification of the intensity of the electron beam. It allows a specific geometry by concentration. Finally, its implementation is relatively inexpensive.

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  • Particle Accelerators (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Luminescent Compositions (AREA)
EP83901325A 1982-05-07 1983-05-05 Procede et dispositif de production de photons dans la gamme des longueurs d'ondes ultraviolettes Expired EP0107686B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT83901325T ATE22180T1 (de) 1982-05-07 1983-05-05 Verfahren und vorrichtung fuer die produktion von photonen im wellenlaengenbereich von ultravioletten photonen.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
LU84136A LU84136A1 (fr) 1982-05-07 1982-05-07 Procede et dispositif de production de photons dans la gamme des longueurs d'ondes ultraviolettes
LU84136 1982-05-07

Publications (2)

Publication Number Publication Date
EP0107686A1 EP0107686A1 (fr) 1984-05-09
EP0107686B1 true EP0107686B1 (fr) 1986-09-10

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ID=19729876

Family Applications (1)

Application Number Title Priority Date Filing Date
EP83901325A Expired EP0107686B1 (fr) 1982-05-07 1983-05-05 Procede et dispositif de production de photons dans la gamme des longueurs d'ondes ultraviolettes

Country Status (6)

Country Link
US (1) US4574198A (ja)
EP (1) EP0107686B1 (ja)
JP (1) JPS59500838A (ja)
DE (1) DE3366001D1 (ja)
LU (1) LU84136A1 (ja)
WO (1) WO1983004099A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851725A (en) * 1993-01-26 1998-12-22 The United States Of America As Represented By The Secretary Of Commerce Exposure of lithographic resists by metastable rare gas atoms
US6031241A (en) 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US6576917B1 (en) 1997-03-11 2003-06-10 University Of Central Florida Adjustable bore capillary discharge
JP2000097837A (ja) * 1998-09-25 2000-04-07 Inst Of Physical & Chemical Res 波長可変光源
US6998785B1 (en) 2001-07-13 2006-02-14 University Of Central Florida Research Foundation, Inc. Liquid-jet/liquid droplet initiated plasma discharge for generating useful plasma radiation

Also Published As

Publication number Publication date
EP0107686A1 (fr) 1984-05-09
JPS59500838A (ja) 1984-05-10
US4574198A (en) 1986-03-04
LU84136A1 (fr) 1984-03-07
DE3366001D1 (en) 1986-10-16
WO1983004099A1 (fr) 1983-11-24
JPS644307B2 (ja) 1989-01-25

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